CN101271535A - Storage medium with stack element structure - Google Patents
Storage medium with stack element structure Download PDFInfo
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- CN101271535A CN101271535A CN 200710088764 CN200710088764A CN101271535A CN 101271535 A CN101271535 A CN 101271535A CN 200710088764 CN200710088764 CN 200710088764 CN 200710088764 A CN200710088764 A CN 200710088764A CN 101271535 A CN101271535 A CN 101271535A
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- carrier
- circuit trace
- conductive contact
- memory
- electrically connected
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
Abstract
The storage medium with a stacking element structure comprises: a carrier which is equipped with a first surface and a second surface that is corresponding to the first surface; a control integrated circuit which is installed on the first surface of the carrier is configured to cause that the conductive contact of the control integrated circuit is electrically connected with a corresponding circuit trajectory on the first surface; a first memory which is installed on the first surface of the carrier is configured to cause that the conductive contact of the first memory is electrically connected with the corresponding circuit trajectory on the first surface; a second memory which is partly overlapped on the first memory is configured to cause that the conductive contact of the second memory is not covered by the first memory and is electrically connected with corresponding circuit trajectory on the first surface; an outer casing for coating the carrier, the control integrated circuit and the memories is also arranged in the storage medium. A plurality of through holes which are used for being exposed on a corresponding circuit trajectory on the second surface of the carrier are formed on the outer casing.
Description
Invention field
The present invention relates to a kind of storage medium with stack element structure.
Technical background
In recent years, the demand of the storage card such as MMC, SD, MINI-MMC, MINI-SD continues to increase along with the fast sale of the consumer products such as digital camera, digital code camera, mobile phone and MP3.These storage cards have similar structure, as shown in Figure 20 and 21, for example understand a kind of existing SD storage card.
See also shown in Figure 20 and 21 external connecting electrode 14 that this SD storage card has a printed circuit board (PCB) 11 as lower cover, storer 12, control integrated circuit 13, several are used for is electrically connected with the external circuit (not shown), and upper cover body 10.
This printed circuit board (PCB) 11 has an element installation surface 110, one and these element installation surface 110 opposing backside surface 111 and is laid in predetermined circuit trace pattern (not shown) on this element installation surface 110.
With this storer 12 with, for example, cover on the element installation surface 110 that crystal type is installed on this printed circuit board (PCB) 11, thereby its internal circuit (not shown) be electrically connected with corresponding circuit trace pattern.
With this control integrated circuit 13 with, for example, cover on the element installation surface 110 that crystal type is installed on this printed circuit board (PCB) 11, thereby its internal circuit (not shown) be electrically connected with corresponding circuit trace pattern.
These external connecting electrodes 14 are arranged on the back side 111 of this printed circuit board (PCB) 11 and and are electrically connected with the corresponding circuit trace pattern of this printed circuit board (PCB) 11.
This upper cover body 10 has one with the shape of this printed circuit board (PCB) 11 couplings and come by rights to combine with this printed circuit board (PCB) 11.
Yet the shortcoming that above-described storage card has is:
The area of this printed circuit board (PCB) 11 can be designed to hold two storeies 12 usually under the size that storage card allows; see the dashed region of the printed circuit board (PCB) 11 among Figure 11, thereby make storage card manufacturer look closely desired volume and fix on this circuit board 11 one or two storeies 12 are installed.Yet along with the size of storage card is more and more littler, the area of circuit board 11 can't hold two storeies that are arranged side by side 12, so storage card manufacturer is caused sizable puzzlement.
Summary of the invention
The present invention's purpose provides a kind of storage medium with stack element structure.
The feature one of according to the present invention, a kind of storage medium with stack element structure is provided, this storage medium is characterised in that and comprises: a carrier, this carrier has a first surface and one and this first surface opposing second surface, on this first surface and this second surface, be formed with predetermined circuit trace respectively, be electrically connected each other with corresponding circuit trace on this second surface in the circuit trace on this first surface; Control integrated circuit on first surface that is installed in this carrier disposes this control integrated circuit, thereby its conductive contact is electrically connected with corresponding circuit trace on this first surface; First memory on first surface that is installed in this carrier disposes this first memory, thereby its conductive contact is electrically connected with corresponding circuit trace on this first surface; Thereby one is stacked in the second memory that its conductive contact is not covered by this first memory partially, and circuit trace corresponding on the conductive contact of this second memory and this first surface is electrically connected; And a shell that coats this carrier, this control integrated circuit and these storeies, this shell is formed with several perforations that is used to expose to the open air the circuit trace of the correspondence on the second surface of this carrier.
According to another characteristic of the invention, a kind of storage medium with stack element structure is provided, this storage medium is characterised in that and comprises: a carrier, this carrier has a first surface, one and this first surface opposing second surface and a perforation that runs through this carrier, on this first surface and this second surface, be formed with predetermined circuit trace respectively, be electrically connected each other with corresponding circuit trace on this second surface in the circuit trace on this first surface; On the first surface that is formed at this carrier so that its surface that is formed with conductive contact is can be via the storer of this perforation turnover, the conductive contact of this storer is electrically connected with corresponding circuit trace on the first surface of this carrier, is formed with predetermined circuit trace on the surface that is formed with conductive contact of this storer; So that be the control integrated circuit of position within this perforation, this control integrated circuit is electrically connected with the lip-deep circuit trace that is formed with conductive contact at this storer on the surface that is formed with conductive contact that is installed on this storer; And a shell that coats this carrier, this control integrated circuit and this storer, this shell is formed with several perforations that is used to expose to the open air the circuit trace of the correspondence on the second surface of this carrier.
According to another feature again of the present invention, a kind of storage medium with stack element structure is provided, this storage medium is characterised in that and comprises: a carrier, this carrier has a first surface, one and this first surface opposing second surface and a perforation that runs through this carrier, on this first surface and this second surface, be formed with predetermined circuit trace respectively, be electrically connected each other with corresponding circuit trace on this second surface in the circuit trace on this first surface; Control integrated circuit on first surface that is installed on this carrier, the conductive contact of this control integrated circuit is electrically connected with corresponding circuit trace on the first surface of this carrier; The interior first memory of perforation that places this carrier, this first memory has a surface that is formed with conductive contact; Second memory on the first surface of a surface that is formed with conductive contact that is installed on this first memory and this carrier, disposing this second memory, is to be electrically connected with the corresponding conductive contact of this first memory and the corresponding circuit trace on the first surface of this carrier thereby make the conductive contact of this second memory; And a shell that coats this carrier, this control integrated circuit and these storeies, this shell is formed with several perforations that is used to expose to the open air the circuit trace of the correspondence on the second surface of this carrier.
According to a feature more again of the present invention, a kind of storage medium with stack element structure is provided, this storage medium is characterised in that and comprises: a carrier, this carrier has a first surface, one and this first surface opposing second surface and a perforation that runs through this carrier, on this first surface and this second surface, be formed with predetermined circuit trace respectively, be electrically connected each other with corresponding circuit trace on this second surface in the circuit trace on this first surface; The interior storer of perforation that places this carrier, this storer has the surface of a predetermined circuit trace that is formed with conductive contact and is electrically connected with corresponding conductive contact, the lip-deep circuit trace of this storer come via conductor with first surface at this carrier on corresponding circuit trace be electrically connected; A lip-deep control integrated circuit that is formed with conductive contact that is installed on this storer disposes this control integrated circuit, thereby the conductive contact of this control integrated circuit is electrically connected with lip-deep corresponding circuit trace at this storer; And a shell that coats this carrier, this control integrated circuit and this storer, this shell is formed with several perforations that is used to expose to the open air the circuit trace of the correspondence on the second surface of this carrier.
According to a feature more of the present invention, a kind of storage medium with stack element structure is provided, this storage medium is characterised in that and comprises: one first carrier, this first carrier has a first surface and one and this first surface opposing second surface, on the first surface of this first carrier and second surface, be formed with predetermined circuit trace respectively, be electrically connected each other with corresponding circuit trace on this second surface in the circuit trace on this first surface; Second carrier partly overlapping with this first carrier, this second carrier has a first surface and one and this first surface opposing second surface, on the first surface of this second carrier and second surface, be formed with predetermined circuit trace respectively, be electrically connected each other with corresponding circuit trace on this second surface in the circuit trace on this first surface, be electrically connected with corresponding circuit trace on the first surface of this first carrier in the circuit trace on the second surface of this second carrier; Control integrated circuit on first surface that is installed on this first carrier disposes this control integrated circuit, thereby the conductive contact of this control integrated circuit is electrically connected with corresponding circuit trace on the first surface of this first carrier; First memory on first surface that is installed in this second carrier disposes this first memory, thereby the conductive contact of this first memory is electrically connected with corresponding circuit trace on the first surface of this second carrier; Second memory on second surface that is installed in this second carrier disposes this second memory configuration, thereby the conductive contact of this second memory is electrically connected with corresponding circuit trace on the second surface of this second carrier; And a shell that coats these carriers, this control integrated circuit and these storeies, this shell is formed with several perforations that is used to expose to the open air the circuit trace of the correspondence on the second surface of this carrier.
According to a feature more of the present invention, a kind of storage medium with stack element structure is provided, this storage medium is characterised in that and comprises: a carrier, this carrier has several conductive connecting pins; A first memory that is installed on this carrier, this first memory has the surface of a circuit trace that is formed with conductive contact and is electrically connected with corresponding conductive contact, dispose this first memory, thereby the conductive contact of this first memory is electrically connected with the corresponding conductive connecting pin of this carrier; A second memory that is installed on this first memory, this second memory has the surface of a circuit trace that is formed with conductive contact and is electrically connected with corresponding conductive contact, dispose this second memory, thereby the conductive contact of this second memory is electrically connected with the corresponding conductive contact of this first memory; A lip-deep control integrated circuit that is formed with circuit trace that is installed on this second memory disposes this control integrated circuit, thereby the conductive contact of this control integrated circuit is electrically connected with the corresponding circuit trace of this second memory; And a shell that coats this carrier, this control integrated circuit and these storeies, this shell is formed with several perforations that is used to expose to the open air the circuit trace of the correspondence on the second surface of this carrier.
According to another feature more of the present invention, a kind of storage medium with stack element structure is provided, this storage medium is characterised in that and comprises: a carrier, this carrier has a first surface and one and this first surface opposing second surface, on the first surface of this carrier, be formed with predetermined circuit trace, and on the second surface of this carrier, be formed with a special interface circuit and predetermined circuit trace, be electrically connected each other with corresponding circuit trace and special interface circuit on this second surface in the circuit trace on this first surface; Control integrated circuit on first surface that is installed on this carrier disposes this control integrated circuit, thereby the conductive contact of this control integrated circuit is electrically connected with corresponding circuit trace on the first surface of this carrier; Storer on first surface that is installed in this carrier disposes this storer, thereby the conductive contact of this storer is electrically connected with corresponding circuit trace on the first surface of this carrier; And a shell that coats this carrier, this control integrated circuit and this storer, this shell is formed with several perforations that is used to expose to the open air the circuit trace of the correspondence on the second surface of this carrier.
According to a feature more again of the present invention, a kind of manufacture method of storage medium is provided, this method comprises the steps: to install a control integrated circuit on the conductive contact installation surface of a storer, the predetermined circuit trace that several conductive contacts is installed on the conductive contact installation surface of this storer and is electrically connected with corresponding conductive contact, dispose this control integrated circuit, thereby its conductive contact is electrically connected with lip-deep corresponding circuit trace at this storer; This storer is installed on the lead frame, thereby the conductive contact of this storer is electrically connected with the corresponding conductive connecting pin of this lead frame; And forming a shell that the conductive connecting pin of this storer, this control integrated circuit and this lead frame is coated, this shell is formed with the perforation of some of the conductive connecting pin of several correspondences that are used to expose to the open air this lead frame.
Description of drawings
Fig. 1 is the signal part cut-open view of the storage medium with stack element structure of first preferred embodiment of the present invention;
Fig. 2 is the schematic bottom plan view of the storage medium with stack element structure of first preferred embodiment of the present invention;
Fig. 3 is the signal part cut-open view of the storage medium with stack element structure of second preferred embodiment of the present invention;
Fig. 4 is the signal part cut-open view of the storage medium with stack element structure of the 3rd preferred embodiment of the present invention;
Fig. 5 is the signal part cut-open view of the storage medium with stack element structure of the 4th preferred embodiment of the present invention;
Fig. 6 is the signal part cut-open view of the storage medium with stack element structure of the 5th preferred embodiment of the present invention;
Fig. 7 is the signal part cut-open view of the storage medium with stack element structure of the 6th preferred embodiment of the present invention;
Fig. 8 is the signal part cut-open view of the storage medium with stack element structure of the 7th preferred embodiment of the present invention;
Fig. 9 is the signal part cut-open view of the storage medium with stack element structure of the 8th preferred embodiment of the present invention;
Figure 10 is the signal part cut-open view of the storage medium with stack element structure of the 9th preferred embodiment of the present invention;
Figure 11 is the signal part cut-open view of the storage medium with stack element structure of the tenth preferred embodiment of the present invention;
Figure 12 is the schematic bottom plan view of the storage medium with stack element structure of the tenth preferred embodiment of the present invention;
Figure 13 is that a storage medium that shows the tenth preferred embodiment of the present invention is seated in the interior schematic isometric of a mount pad;
Figure 14 and 15 is that the storage medium of demonstration the tenth preferred embodiment of the present invention is used in the schematic plan view on the IC wafer card;
Figure 16 is that the storage medium of demonstration the tenth preferred embodiment of the present invention is used in another schematic plan view on the IC wafer card;
Figure 17 to 19 is the synoptic diagram that show the manufacture method of storage medium of the present invention;
Figure 20 is a signal exploded view that shows existing storage medium; And
Figure 21 is the schematic plan view at the back side of a storage medium that shows Figure 20.
Embodiment
In the detailed description of the preferred embodiments of the present invention of back, identical or similar elements is to be indicated by identical label, and their detailed description will be omitted.In addition, disclose feature of the present invention for clear, the element in graphic is not to describe by actual ratio.
See also shown in Fig. 1 and 2, the storage medium with stack element structure of first preferred embodiment of the present invention comprises one first carrier 1, one second carrier 2, control integrated circuit (control IC) 3, first and second storeies 4 and 5 and shells 6.
This first carrier 1 can be printed circuit board (PCB) or lead frame.In the present embodiment, this first carrier 1 is printed circuit board (PCB) and has a first surface 10 and a second surface 11 that is laid with the external connecting electrode 110 that is commonly called as golden finger that is laid with the circuit trace (not shown).Be electrically connected via existing suitable mode corresponding electrode 110 next and on this second surface 11 in the circuit trace on this first surface 10.
In the present embodiment, with this control IC 3 with on the first surface 10 that covers crystal type and be installed on this first carrier 1, thereby the conductive contact on the conductive contact installation surface 30 that is formed on this control IC 3 is electrically connected with corresponding circuit trace on this first surface 10.
Should be noted that on the first surface 10 of this carrier 1 also in the mode identical with this control IC 3 several being installed similarly is passive device 7 as resistance and the electric capacity.
This second carrier 2 can be printed circuit board (PCB) or lead frame.In the present embodiment, this second carrier 2 is printed circuit board (PCB)s and has a first surface 20 and a second surface 21 that is laid with predetermined circuit trace (not shown) that is laid with predetermined circuit trace (not shown).In the circuit trace on this first surface 20 is to be electrically connected via existing suitable mode corresponding circuit trace next and on this second surface 21.
In the present embodiment, be to be electrically connected with corresponding circuit trace on the first surface 10 at this first carrier 1 in the circuit trace on the second surface 21 of this second carrier 2 via conductor 8.
In the present embodiment, with this first memory 4 with on the first surface 20 that covers crystal type and be installed on this second carrier 2, thereby the conductive contact 41 on the conductive contact installation surface 40 that is formed on this first memory 4 is electrically connected with corresponding circuit trace on this first surface 20, and this second memory 5 also is covering on the second surface 21 that crystal type is installed in this second carrier 2, thereby the conductive contact 51 on the conductive contact installation surface 50 that is formed on this second memory 5 is electrically connected with corresponding circuit trace on this second surface 21.
This shell 6 all is placed in above-described element in it and has the perforation 60 that several expose corresponding electrode 110 to the open air.Thereby the storage medium with stack element structure of the first embodiment of the present invention is done.
See also shown in Figure 3ly, the storage medium with stack element structure of second preferred embodiment of the present invention that illustrates comprises a carrier 1, control IC 3, storer 4, and shell 6.
This carrier 1 can be printed circuit board (PCB) or lead frame.In the present embodiment, this carrier 1 is identical with first carrier 1 among first embodiment, except this carrier 1 is formed with the through hole 12 in predetermined zone.
In the present embodiment, with this storer 4 with on the first surface 10 that covers crystal type and be installed on this carrier 1, thereby make its conductive contact installation surface 40 can be, thereby its conductive contact 41 that is formed on the surface 40 is electrically connected with corresponding circuit trace on the first surface 10 of this carrier 1 via 12 turnover of this through hole.
With this control IC 3 with on the surface 40 of covering crystal type and being installed on this storer 4, thereby this control IC 3 is positioned within this through hole 12 and, thereby the conductive contact 31 of this control IC 3 is electrically connected with corresponding circuit trace on the surface 40 of this storer 4.
Several passive devices 7 also are installed on the surface 40 of this storer 4 in the mode similar to this control IC 3.
Similar to first preferred embodiment, this shell 6 is all to be placed in above-described element in it and to have the perforation 60 that several expose corresponding electrode 110 to the open air.
Fig. 4 has shown the storage medium with stack element structure of the 3rd preferred embodiment of the present invention.Different with second preferred embodiment, the storage medium of present embodiment also comprises a second memory 5 and also be formed with the predetermined circuit trace (not shown) that is electrically connected with corresponding electrode 110 in the present embodiment on the second surface 11 of this carrier 1.With this second memory 5 with on the second surface 11 that covers crystal type and be installed in this carrier 1, thereby its conductive contact 51 that is formed on the conductive contact installation surface 50 is electrically connected with corresponding electrode 110 on the second surface 11 of this carrier 1.Should be noted that in the present embodiment this second memory 5 that illustrates is provided with this first memory 4 symmetrically with respect to this carrier 1, yet this second memory 5 can not be provided with symmetrically with this first memory 4.
Fig. 5 is a schematic sectional view that shows the storage medium with stack element structure of the 4th preferred embodiment of the present invention.In the present embodiment, this storage medium comprises a carrier 1, control IC 3, first and second storeies 4 and 5 and shells 6.
This carrier 1 can be printed circuit board (PCB) or lead frame.In the present embodiment, this carrier 1 is identical with first carrier 1 among first embodiment.
In the present embodiment, this control IC 3 and these passive devices 7 are installed on the first surface 10 of this carrier 1 as in first embodiment those.
The predetermined circuit trace (not shown) that this first memory 4 is placed in the through hole 12 of this carrier 1 and on its conductive contact installation surface 40, be formed with conductive contact 41 and be electrically connected with corresponding conductive contact 41.
With this second memory 5 covering crystal type and be installed on the first surface 10 of this carrier 1 and the conductive contact of this first memory 4 forms on the surface 40, thereby the conductive contact 51 of this second memory 5 is connected electrically in the circuit trace of the correspondence on the first surface 10 of this carrier 1 and the circuit trace of the correspondence on the surface 40 at this first memory 4.
Fig. 6 is a signal part cut-open view that shows the storage medium with stack element structure of the 5th preferred embodiment of the present invention.Different with the 4th preferred embodiment, this second memory 5 only is installed on the surface 40 of this first memory 4, thereby the conductive contact 51 of this second memory 5 is electrically connected with corresponding circuit trace on the surface 40 of this first memory 4.The circuit trace on the surface 40 of this first memory 4 come via conductor 8 ' with surface 10 at this carrier 1 on corresponding circuit trace be electrically connected.
Fig. 7 is a signal part cut-open view that shows the storage medium with stack element structure of the 6th preferred embodiment of the present invention.The storage medium of present embodiment comprises a carrier 1, control IC 3, first and second storeies 4 and 5, and shell 6.
This carrier 1 can be printed circuit board (PCB) or lead frame.In the present embodiment, this carrier 1 is identical with first carrier 1 among first embodiment.In addition, in the present embodiment, this first memory 4, this control IC 3 and several passive devices 7 are covered on the first surface 10 that crystal type is installed on this carrier 1 with aforesaid.
This second memory 5 partly is stacked on this first memory 4 under its conductive contact 51 is not covered by this first memory 4 and its conductive contact 51 is electrically connected with corresponding circuit trace on the surface 10 at this carrier 1 via conductor 8.
Similar to first preferred embodiment, this shell 6 all is placed in above-described element in it and has the perforation 60 that several expose corresponding electrode 110 to the open air.
See also shown in Figure 8ly, show the storage medium with stack element structure of the 7th preferred embodiment of the present invention.In the present embodiment, this storage medium comprises a carrier 1, control IC 3, first and second storeies 4 and 5, and shell 6.
This carrier 1 can be printed circuit board (PCB) or lead frame.In the present embodiment, this carrier 1 is the lead frame with several conductive connecting pins.
With this first memory 4 to cover crystal type via conductor 8 " be installed on the conductive connecting pin of this carrier 1, thereby the conductive contact 41 that makes this first memory 4 is electrically connected with corresponding conductive connecting pin.This first memory 4 is formed with several and corresponding conductor 8 at its edge " the plating chase 42 that is electrically connected.
With this second memory 5 to cover crystal type via conductor 8 " be installed on this first memory 4, thereby the conductive contact 51 of this second memory 5 is electrically connected with the corresponding plating chase 42 of this first memory 4.Identical with this first memory 4, this second memory 5 is formed with several and corresponding conductor 8 at its edge " the plating chase 52 that is electrically connected.In addition, this second memory 5 with conductive contact installation surface 50 facing surfaces 53 on be formed with the predetermined circuit trace (not shown) that is electrically connected with corresponding plating chase 52.
This control IC 3 and these passive devices 7 are covered on the surface 53 that crystal type is installed on this second memory 5 with aforesaid.
Similar to first preferred embodiment, this shell 6 all is placed in above-described element in it and the perforation 60 with several somes that expose corresponding conductive connecting pin to the open air.
See also shown in Figure 9ly, show the storage medium with stack element structure of the 8th preferred embodiment of the present invention.In the present embodiment, this storage medium comprises a carrier 1, control IC 3, storer 4, and shell 6.
This carrier 1 can be printed circuit board (PCB) or lead frame.In the present embodiment, this carrier 1 is the lead frame with several conductive connecting pins.
With this storer 4 as the 7th embodiment to cover crystal type via conductor 8 " be installed on the conductive connecting pin of this carrier 1.This storer 4 with conductive contact installation surface 40 facing surfaces 43 on be formed with predetermined circuit trace (not shown).In the present embodiment, the conductive connecting pin of this carrier 1 has one and extends upward with what be electrically connected with corresponding circuit trace on the surface 43 of this storer 4 and fall L shaped extension.
This control IC 3 and these passive devices 7 are covered on the surface 43 that crystal type is installed on this storer 4 with aforesaid.
Similar to aforesaid embodiment, this shell 6 all is placed in above-described element in it and has the perforation 60 that several expose the some of corresponding conductive connecting pin to the open air.
Figure 10 is a signal part cut-open view that shows the storage medium with stack element structure of the 9th preferred embodiment of the present invention.Different with the 5th embodiment, the control IC 3 of present embodiment and passive device 7 are to cover on the surface 40 that crystal type is installed on this storer 4 with aforesaid.
Figure 12 is a schematic plan view that shows the storage medium with stack element structure of the tenth preferred embodiment of the present invention, and Figure 11 is the signal part cut-open view of the storage medium of Figure 12.
As shown in Figure 11 and 12, the storage medium of present embodiment comprises a carrier 1, control IC 3, first and second storeies 4 and a shell 6.
This carrier 1 can be printed circuit board (PCB) or any plate body of being made by suitable material.This carrier 1 has a first surface 10 and a second surface 11.On this first surface 10, be formed with predetermined circuit trace (not shown).One first external connecting electrode 111 and several second external connecting electrodes 110 are formed on this second surface 11 and they are through existing mode and the corresponding circuit trace on this first surface 10 is electrically connected.
In the present embodiment, this first external connecting electrode 111 is the electrodes that generally use on SIM card, and these second external connecting electrodes 110 are the electrodes that generally use on the SD storage card.
With this control IC 3, these storeies 4 and 5 and these passive devices 7 cover on the first surface 10 that crystal type is installed on this carrier 1 with aforesaid.
Figure 13 shows the user mode of the storage medium of the tenth embodiment.As shown in the figure, this storage medium is placed in the card mount pad S on the circuit board unit PCB that is arranged on mobile phone.
Figure 14 and 15 shows the another kind application of the tenth preferred embodiment of the present invention.As shown in the figure, in the present embodiment, first external connecting electrode 111 of this storage medium is the electrode that generally uses on IC-card, and this storage medium is slidably disposed on the body B of IC-card, (see shown in Figure 15) thereby make when this storage medium places the storer use location, these second external connecting electrodes 110 are suitable for being electrically connected to reach the access running to this storer with the external circuit (not shown).
Figure 16 shows the another kind application of the tenth preferred embodiment of the present invention.As shown in the figure, different with the mode of Figure 14, in should using, this body B is formed with a through hole Bh and this storage medium is connected this body B pivotly, thereby this storage medium can be rotated between a storer use location and an IC-card use location, and in this storer use location, this storage medium is vertical with this body B, in this IC-card use location, this storage medium is parallel with this body B and place in this through hole Bh.
See also shown in Figure 17 to 19, disclosed wherein a kind of manufacture method of storage medium of the present invention.As shown in graphic, this storer 4 is equipped with conductive contact 41 and is laid with the circuit trace (not shown) of being scheduled to that is electrically connected with corresponding conductive contact 41 on its conductive contact installation surface 40.Then, a control IC 3 and several passive devices 7 are covered on the conductive contact installation surface 40 that crystal type is installed on this storer 4 with aforesaid, thereby their conductive contact (not shown) is electrically connected with corresponding circuit trace on the conductive contact installation surface 40 of this storer 4.
Then, this storer 4 is installed on the lead frame 1 with the aforesaid crystal type that covers, thereby the conductive contact 41 of this storer 4 is electrically connected with the corresponding pin of lead frame 1.
Then, formed one above-described element all has been placed in shell 6 in it.This shell 6 has several perforations 60 that exposes the some of corresponding conductive connecting pin to the open air.
In sum, the present invention's it " a kind of storage medium with stack element structure " really can pass through above-mentioned disclosed structure, device, reaches its intended purposes and effect, and do not see the also unexposed use of publication before the application, meet the requirements such as novelty, progress of patent of invention.
Above-mentioned disclosed graphic and explanation only is embodiments of the invention, and is non-for limiting embodiments of the invention; Those of ordinary skills, it complies with feature category of the present invention, and other equivalences of being done change or modify, and all should be encompassed in the claim of this case.
Claims (12)
1. storage medium with stack element structure is characterized in that comprising:
A carrier, this carrier has a first surface and one and this first surface opposing second surface, on this first surface and this second surface, be formed with predetermined circuit trace respectively, be electrically connected each other with corresponding circuit trace on this second surface in the circuit trace on this first surface;
Control integrated circuit on first surface that is installed in this carrier disposes this control integrated circuit, thereby its conductive contact is electrically connected with corresponding circuit trace on this first surface;
First memory on first surface that is installed in this carrier disposes this first memory, thereby its conductive contact is electrically connected with corresponding circuit trace on this first surface;
Thereby one is stacked in the second memory that its conductive contact is not covered by this first memory partially, and the conductive contact of this second memory is electrically connected with corresponding circuit trace on this first surface; And
A shell that coats this carrier, this control integrated circuit and these storeies, this shell are formed with several perforations that is used to expose to the open air the circuit trace of the correspondence on the second surface of this carrier.
2. storage medium with stack element structure is characterized in that comprising:
A carrier, this carrier has a first surface, one and this first surface opposing second surface and a perforation that runs through this carrier, on this first surface and this second surface, be formed with predetermined circuit trace respectively, be electrically connected each other with corresponding circuit trace on this second surface in the circuit trace on this first surface;
Thereby make its surface that is formed with conductive contact can be on the first surface that is formed at this carrier via the storer of this perforation turnover, the conductive contact of this storer is electrically connected with corresponding circuit trace on the first surface of this carrier, is formed with predetermined circuit trace on the surface that is formed with conductive contact of this storer;
A control integrated circuit, it is installed on the surface that is formed with conductive contact of this storer, thereby this control integrated circuit is positioned within this perforation, this control integrated circuit be electrically connected in the lip-deep circuit trace that is formed with conductive contact of this storer; And
A shell that coats this carrier, this control integrated circuit and this storer, this shell are formed with several perforations that is used to expose to the open air the circuit trace of the correspondence on the second surface of this carrier.
3. storage medium as claimed in claim 2, it is characterized in that also comprising a second memory on the second surface that is formed at this carrier, the conductive contact of this second memory is to be electrically connected with corresponding circuit trace on the second surface of this carrier.
4. storage medium with stack element structure is characterized in that comprising:
A carrier, this carrier has a first surface, one and this first surface opposing second surface and a perforation that runs through this carrier, on this first surface and this second surface, be formed with predetermined circuit trace respectively, be electrically connected each other with corresponding circuit trace on this second surface in the circuit trace on this first surface;
Control integrated circuit on first surface that is installed on this carrier, the conductive contact of this control integrated circuit is electrically connected with corresponding circuit trace on the first surface of this carrier;
The interior first memory of perforation that places this carrier, this first memory has a surface that is formed with conductive contact;
Second memory on the first surface of a surface that is formed with conductive contact that is installed on this first memory and this carrier, disposing this second memory, is to be electrically connected with the corresponding conductive contact of this first memory and the corresponding circuit trace on the first surface of this carrier thereby make the conductive contact of this second memory; And
A shell that coats this carrier, this control integrated circuit and these storeies, this shell are formed with several perforations that is used to expose to the open air the circuit trace of the correspondence on the second surface of this carrier.
5. storage medium with stack element structure is characterized in that comprising:
A carrier, this carrier has a first surface, one and this first surface opposing second surface and a perforation that runs through this carrier, on this first surface and this second surface, be formed with predetermined circuit trace respectively, be electrically connected each other with corresponding circuit trace on this second surface in the circuit trace on this first surface;
The interior storer of perforation that places this carrier, this storer has the surface of a predetermined circuit trace that is formed with conductive contact and is electrically connected with corresponding conductive contact, the lip-deep circuit trace of this storer come via conductor with first surface at this carrier on corresponding circuit trace be electrically connected;
A lip-deep control integrated circuit that is formed with conductive contact that is installed on this storer disposes this control integrated circuit, thereby the conductive contact of this control integrated circuit is electrically connected with lip-deep corresponding circuit trace at this storer; And
A shell that coats this carrier, this control integrated circuit and this storer, this shell are formed with several perforations that is used to expose to the open air the circuit trace of the correspondence on the second surface of this carrier.
6. storage medium with stack element structure is characterized in that comprising:
One first carrier, this first carrier has a first surface and one and this first surface opposing second surface, on the first surface of this first carrier and second surface, be formed with predetermined circuit trace respectively, be electrically connected each other with corresponding circuit trace on this second surface in the circuit trace on this first surface;
Second carrier partly overlapping with this first carrier, this second carrier has a first surface and one and this first surface opposing second surface, on the first surface of this second carrier and second surface, be formed with predetermined circuit trace respectively, be electrically connected each other with corresponding circuit trace on this second surface in the circuit trace on this first surface, be electrically connected with corresponding circuit trace on the first surface of this first carrier in the circuit trace on the second surface of this second carrier;
Control integrated circuit on first surface that is installed on this first carrier disposes this control integrated circuit, thereby the conductive contact of this control integrated circuit is electrically connected with corresponding circuit trace on the first surface of this first carrier;
First memory on first surface that is installed on this second carrier disposes this first memory, thereby the conductive contact of this first memory is electrically connected with corresponding circuit trace on the first surface of this second carrier;
Second memory on second surface that is installed on this second carrier disposes this second memory, thereby the conductive contact of this second memory is electrically connected with corresponding circuit trace on the second surface of this second carrier; And
A shell that coats these carriers, this control integrated circuit and these storeies, this shell are formed with several perforations that is used to expose to the open air the circuit trace of the correspondence on the second surface of this carrier.
7. storage medium with stack element structure is characterized in that comprising:
A carrier, this carrier has several conductive connecting pins;
A first memory that is installed on this carrier, this first memory has the surface of a circuit trace that is formed with conductive contact and is electrically connected with corresponding conductive contact, dispose this first memory, thereby the conductive contact of this first memory is electrically connected with the corresponding conductive connecting pin of this carrier;
A second memory that is installed on this first memory, this second memory has the surface of a circuit trace that is formed with conductive contact and is electrically connected with corresponding conductive contact, dispose this second memory, thereby the conductive contact of this second memory is electrically connected with the corresponding conductive contact of this first memory;
A lip-deep control integrated circuit that is formed with circuit trace that is installed on this second memory disposes this control integrated circuit, thereby the conductive contact of this control integrated circuit is electrically connected with the corresponding circuit trace of this second memory; And
A shell that coats this carrier, this control integrated circuit and these storeies, this shell are formed with several perforations that is used to expose to the open air the circuit trace of the correspondence on the second surface of this carrier.
8. storage medium with stack element structure is characterized in that comprising:
A carrier, this carrier has a first surface and one and this first surface opposing second surface, on the first surface of this carrier, be formed with predetermined circuit trace, and on the second surface of this carrier, be formed with a special interface circuit and predetermined circuit trace, be electrically connected each other with corresponding circuit trace and special interface circuit on this second surface in the circuit trace on this first surface;
Control integrated circuit on first surface that is installed on this carrier disposes this control integrated circuit, thereby the conductive contact of this control integrated circuit is electrically connected with corresponding circuit trace on the first surface of this carrier;
Storer on first surface that is installed on this carrier disposes this storer, thereby the conductive contact of this storer is electrically connected with corresponding circuit trace on the first surface of this carrier; And
A shell that coats this carrier, this control integrated circuit and this storer, this shell are formed with several perforations that is used to expose to the open air the circuit trace of the correspondence on the second surface of this carrier.
9. storage medium as claimed in claim 8, wherein, this special interface circuit is a user identity module interface circuit.
10. storage medium as claimed in claim 8, wherein, this special interface circuit is a user identity module interface circuit.
11. storage medium as claimed in claim 8, wherein, this special interface circuit is financial wafer card interface circuit.
12. the manufacture method of a storage medium comprises following step:
A control integrated circuit is installed on the conductive contact installation surface of a storer, the predetermined circuit trace that several conductive contacts is installed on the conductive contact installation surface of this storer and is electrically connected with corresponding conductive contact, dispose this control integrated circuit, thereby its conductive contact is electrically connected with lip-deep corresponding circuit trace at this storer;
This storer is installed on the lead frame, thereby the conductive contact of this storer is electrically connected with the corresponding conductive connecting pin of this lead frame; And
Form a shell that the conductive connecting pin of this storer, this control integrated circuit and this lead frame is coated, this shell is formed with the perforation of some of the conductive connecting pin of several correspondences that are used to expose to the open air this lead frame.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200710088764 CN101271535B (en) | 2007-03-22 | 2007-03-22 | Storage medium with stack element structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200710088764 CN101271535B (en) | 2007-03-22 | 2007-03-22 | Storage medium with stack element structure |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101271535A true CN101271535A (en) | 2008-09-24 |
| CN101271535B CN101271535B (en) | 2010-07-14 |
Family
ID=40005494
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 200710088764 Expired - Fee Related CN101271535B (en) | 2007-03-22 | 2007-03-22 | Storage medium with stack element structure |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN101271535B (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104937713A (en) * | 2013-01-30 | 2015-09-23 | 德克萨斯仪器股份有限公司 | Circuit assembly |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4030761B2 (en) * | 2000-03-31 | 2008-01-09 | 株式会社ルネサステクノロジ | Semiconductor device and manufacturing method thereof |
| TWI249712B (en) * | 2001-02-28 | 2006-02-21 | Hitachi Ltd | Memory card and its manufacturing method |
| CN2665828Y (en) * | 2003-10-14 | 2004-12-22 | 胜开科技股份有限公司 | Small-sized memory card structure |
| CN1790385A (en) * | 2004-12-13 | 2006-06-21 | 大智电子科技公司 | Memory card |
-
2007
- 2007-03-22 CN CN 200710088764 patent/CN101271535B/en not_active Expired - Fee Related
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104937713A (en) * | 2013-01-30 | 2015-09-23 | 德克萨斯仪器股份有限公司 | Circuit assembly |
| CN104937713B (en) * | 2013-01-30 | 2018-09-21 | 德克萨斯仪器股份有限公司 | Circuit unit |
Also Published As
| Publication number | Publication date |
|---|---|
| CN101271535B (en) | 2010-07-14 |
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Effective date of registration: 20170303 Address after: Apia, Samoa Patentee after: Fame and fortune point holding company Address before: Taipei City, Taiwan, China Patentee before: Shen Yunong |
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