CN101251982A - Pixel circuit for improving active matrix organic light-emitting device life period - Google Patents
Pixel circuit for improving active matrix organic light-emitting device life period Download PDFInfo
- Publication number
- CN101251982A CN101251982A CNA2008100356792A CN200810035679A CN101251982A CN 101251982 A CN101251982 A CN 101251982A CN A2008100356792 A CNA2008100356792 A CN A2008100356792A CN 200810035679 A CN200810035679 A CN 200810035679A CN 101251982 A CN101251982 A CN 101251982A
- Authority
- CN
- China
- Prior art keywords
- transistor
- electrode
- image element
- element circuit
- voltage
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Images
Landscapes
- Control Of El Displays (AREA)
- Control Of Indicators Other Than Cathode Ray Tubes (AREA)
Abstract
The invention relates to a pixel circuit for improving operation life of active matrix organic luminescent devices, which comprises T1 for receiving line scanning signal control and transferring data signals; T2 for supplying current to a light emitting diode; T3 and T4 for receiving current-line scanning beam control and providing a discharge path for a capacitor, T5 for receiving previous-line scanning signal control and providing a charge path for the capacitor, a storage capacitor C1 for charging, and the light emitting diode for serving T2 to execute luminescent operation. The source electrode of T1 is connected to a signal wire, and the drain electrode of T1 is connected to the source electrode of T3 and is also connected to the gate electrode of T2 at the drain electrode of T4 and the source electrode of T5; the drain electrode of T3 is connected to the source electrode of the fourth transistor; the source electrode of T2 is connected to D1 and the drain electrode of T2 is connected to a power cord; the gate electrode of T5 is connected to line scanning beam and the drain electrode of T5 is connected to the power cord; the electrodes of the capacitor C1 are connected respectively to gate electrode nodes of T3 and T4 and the power cord.
Description
Technical field
The present invention relates to a kind of image element circuit, more specifically to a kind of image element circuit that improves active matrix organic light-emitting device life period.
Background technology
The device of being used for of making on glass substrate active (AM) driving OLED has two kinds at present basically, i.e. amorphous silicon (a-Si) thin film transistor (TFT) (TFT) and low temperature polycrystalline silicon (LTPS) TFT.The TFT device works long hours and understand the drift of generating device characteristic under certain voltage bias state.If do not take certain measure to handle this drift, the electric current of the device drive OLED of occurrence features drift descends, and display device brightness reduces, and can cause the device premature failure.The TFT of driving OLED is in certain bias state in the course of the work in AMOLED, can the occurrence features drift.Usually be that its numerical value raises for threshold voltage (VTH).Therefore, in AMOLED, must carry out particular processing, with reply TFT device attenuation problem.One of important method of suppression device characteristic drift problem is a design pixel compensation circuit.
Fig. 1 is a kind of image element circuit structure and drive signal sequential chart [1] thereof of prior art.This circuit utilizes precharge, threshold setting and luminous three phases to finish driving.As Fig. 1 mark (1), (2) are respectively first, second stages, the other times of removing first, second stage in the frame time are the phase III.Phase one is played precharge effect, and signal TNO and GN are noble potential simultaneously, and TFTSw3 and Sw2 open, and the grid of DTFT charges to sufficiently high voltage by VDD by Sw3 and Sw2.In subordinate phase, TNO becomes electronegative potential, and Sw3 closes, and the DTFT grid discharges to the source of Sw1 electrode (being diode anode) by two TFT Sw2 and DTFT.Because the DAT signal is transferred to the source electrode (being diode anode) of Sw1 by Sw1, DTFT is discharged to its grid voltage and reaches
Till VDAT+VTH, at this moment, DTFT grid voltage VG=VDAT+VTH is stored on the Cst.In first, second stage, OLED negative electrode CTD is a high voltage, and OLED is not luminous.To the phase III, CTD becomes low-voltage, and DTFT starts working and saturated mode, provides electric current to OLED.When drift took place characteristic, the performance of TFT was that VTH becomes VTH ', because through over-compensation, VG becomes VDAT+VTH ', therefore the current value that DTFT is provided does not have influence substantially, thereby had played the effect of compensation VTH drift.
Fig. 2 is another existing image element circuit structure and drive signal synoptic diagram [2] thereof.Its principle of work and circuit shown in Figure 1 are basic identical.Different with Fig. 1 is that the OLED negative electrode meets set potential VCC, has increased by one at the OLED anode and has connected to such an extent that TFT DCTL is controlled by signal TNOn-1.At first, second stage signal TNOn-1 is electronegative potential, and TFT DCTL closes, and says that OLED and drive TFT separate.In the phase III, signal TNOn-1 becomes noble potential, and TFT DCTL opens, and OLED is luminous.The function of compensation threshold drift is identical with circuit shown in Figure 1.
Above-mentioned circuit shortcoming shown in Figure 1 is as follows: (1) each pixel needs three line scan signals, and these three signals all need system driving circuit to provide, and have increased the complicacy of system driving circuit; (2) the horizontal scanning line number is more, can take more substrate area, reduces the aperture opening ratio of bottom emission OLED; Article (3) three, wherein one of horizontal scanning line is implemented in above the OLED negative electrode, needs anticathode to carry out graphically, has increased complicacy and cost that the OLED negative electrode forms; (4) be in series with two TFT between OLED and the power lead VDD, increased impedance loop, reduced circuit power consumption efficient.
a (b)
Circuit shown in Figure 2 has avoided anticathode to carry out the necessity of image conversion.The TFT DCTL that the method whether control OLED opens changes into by a series connection realizes that this TFT is controlled by signal TNOn-1.This circuit forms the figure on noting be used in the OLED negative electrode, still has the existing shortcoming of Fig. 1 circuit.(1) each pixel needs three line scan signals, and system driving circuit is more complicated still; (2) the horizontal scanning line number is more, and all is positioned on the array base palte, can take more substrate area, reduces the aperture opening ratio of bottom emission OLED; (3) TFT that connects between OLED and the power lead VDD has been increased to three TFT, has further increased the impedance loop of the TFT device of connecting with OLED than circuit shown in Figure 1, has reduced power consumption efficiency.
Therefore, if can in the image element circuit of realizing compensation TFT characteristic drift, reduce the number of horizontal scanning line, and the number of the TFT that connects with OLED of minimizing, will improve aperture ratio of pixels and power consumption efficiency.
Summary of the invention
The object of the present invention is to provide the image element circuit that improves active matrix organic light-emitting device life period, this circuit is not when increasing the image element circuit complicacy, horizontal scanning line is reduced to one, a TFT decreased number to of connecting with OLED, can improve the power consumption efficiency of image element circuit, reduce the complicacy of system driving circuit.
For achieving the above object, technical scheme of the present invention is: utilize the sweep signal of adjacent lines, avoid introducing extra sweep signal line into the pixel of current data voltage writing line, thus the simplified system driving circuit, and increase aperture opening ratio; Utilize different TFT devices to carry out the drift-compensated voltage of VTH respectively and set and two functions of driving OLED, thereby be design increase dirigibility; Utilize precharge, the voltage of valve value compensation is set, according to setting the AMOLED image element circuit that the luminous three phases of gray-scale value carries out work.
The basic circuit structure of the realization such scheme that the present invention proposes comprises 5 TFT, is respectively transistor T 1, T2, T3, T4, T5; 1 light emitting diode OLED D1, a memory capacitance C1; The mat woven of fine bamboo strips one transistor T 1, the control that is used to receive this line scan signals is delivered to transistor T 3 with data-signal; Mat woven of fine bamboo strips two-transistor T2 is used under gate voltage control to light emitting diode OLED D1 supplying electric current; The mat woven of fine bamboo strips three, the mat woven of fine bamboo strips four transistor Ts 3, T4, the control that is used to receive the current line sweep trace provides the capacitance discharges path, thereby sets the voltage on the electric capacity; The mat woven of fine bamboo strips five transistor Ts 5, the sweep signal control that is used to receive the front row provides the path of electric capacity charging; Memory capacitance C1 is used for charging, when charging makes transistor T 2, T3 place high voltage, transistor T 3 is opened, and on threshold voltage storage rank, Gn becomes high voltage, and Gn-1 becomes low-voltage, thereby closes transistor T 5, and transistor T 4 is opened with transistor T 1; Light emitting diode OLED D1, transistor T 2 to diode OLED D1 supplying electric current, is carried out light emission operation under gate voltage control.
The every capable pixel of beneficial effect of the present invention (1) only needs a horizontal scanning line, has farthest reduced the complexity of horizontal scanning line and the complicacy of system driving circuit; (2) TFT that connects from power lead VDD to OLED is kept to and has only one, has farthest reduced the TFT number of connecting with TFT, has promoted circuit power consumption efficient; (3) because because the row, column number of scanning lines is reduced, the OLED aperture opening ratio increases to some extent; (4) the VTH setting is not same TFT with the OLED driving, and the two is in similar VGS bias state, approaching VTH drift degree can be arranged, thereby can realize compensation effectively.The two can be designed to different W/L values, adjusts driving current value flexibly, has increased the dirigibility of design.
Below in conjunction with drawings and Examples to the present invention's detailed explanation of making comparisons.
Description of drawings
Fig. 1 is a kind of image element circuit synoptic diagram of prior art;
Fig. 2 is the image element circuit synoptic diagram of another kind of prior art;
Fig. 3 be image element circuit of the present invention basic structural representation;
Fig. 4 is a kind of image element circuit synoptic diagram of the present invention;
Fig. 5 is an another kind of image element circuit synoptic diagram of the present invention.
Embodiment
Wherein,
Gn-1: control the line scanning control signal that n-1 line data voltage writes;
Gn: control the line scanning control signal that n line data voltage writes;
DAT: display data voltage signal;
VDD: power supply signal;
T1: the first transistor TFT;
T2: transistor seconds TFT;
T3: the 3rd transistor T FT;
T4: the 4th transistor T FT;
T5: the 5th transistor T FT;
D1: light emitting diode;
C1: memory capacitance;
C2: coupling capacitance.
The device TFT that uses in the circuit of the present invention has three electrodes, gate electrode, and second electrode is with third electrode.Can be called source electrode, drain electrode to second, third electrode, also can be called drain electrode and source electrode to second, third electrode, not change the function or the essence annexation of circuit.Because the symmetry on the circuit diagram kind is electric, second and third electrode TFT among the present invention are called source electrode and drain electrode.
With reference to Fig. 3, this is an image element circuit basic circuit structure synoptic diagram of the present invention.
As shown in the figure, image element circuit of the present invention comprises 5 TFT, is respectively transistor T 1, T2, T3, T4, T5; 1 light emitting diode OLED D1, a memory capacitance C1; Be used to store the voltage that is set on its electrode; Comprise the data signal line that is used to transmit data voltage signal DAT, be used to transmit the horizontal scanning line of gated sweep signal Gn and Gn-1, be used to provide the power lead of power supply signal VDD.
Shown in Fig. 3 (a), signal Gn-1, Gn, the voltage waveform of DAT is shown in Fig. 3 (b).
The course of work of this circuit can be divided into three phases, (1) pre-charging stage as shown in Fig. 3 (b) respectively, as shown in Fig. 3 (b) (2) threshold voltage memory phase, and the three phases under the time of going out within the frame time outside above-mentioned two stages.
In pre-charging stage, previous row, the gated sweep signal Gn-1 that promptly n-1 is capable is a high voltage, control TFT T5 opens.Row under the pixel, the gated sweep signal Gn that promptly n is capable is a low-voltage, oxide-semiconductor control transistors T4 closes.Therefore in this time in stage, VDD to the gate electrode node N1 charging of transistor T 2 with transistor T 3, also for capacitor C 1 is charged to enough high voltage simultaneously by transistor T 5, and transistor T 3 is opened.At the threshold voltage memory phase, Gn becomes high voltage, and Gn-1 becomes low-voltage, thereby transistor T 5 is closed, transistor T 4 is opened with transistor T 1, and the electric charge that is stored in above the node N1 is node N2 with transistor T 3 to the discharge of transistor T 1 drain electrode by transistor T 4.Because signal voltage is transferred to node N2 by transistor T 1, when node N1 was discharged to its voltage and drops to VDAT+VTH, transistor T 3 was closed, and discharge stops.The luminous required GTG value corresponding of the corresponding diode D1 of VDAT signal voltage, the electric current that transistor T 2 provides can be expressed as:
IDS＝k*(VN1-VN3-VTH_T3)^2＝k*(VDAT+VTH_T3-VN3-VTH_T2)^2
If VTH_T2=VTH_T3, then obvious IDS=k* (VDAT-VN3) ^2
Wherein, k=(1/2) * (W/L) * Cox*uFE, W, L, Cox, uFE are respectively the channel width of transistor T 2, channel length, unit-area capacitance value between channel region and the gate electrode, carrier mobility; VTH_T3 and VTH_T2 are respectively the threshold voltage of transistor T 3 and transistor T 2.Find out that by above-mentioned formula when transistor T 2 equates with transistor T 3 threshold voltages or be close, have nothing to do because IDS and transistor T 2 get the VTH value, this circuit can effectively suppress transistor T 2 and get characteristic drift.In fact, because T2 is identical with the T3 gate electrode voltage, the source electrode voltage is close, and its threshold voltage shift also is approaching.
With reference to Fig. 4, this is a kind of image element circuit synoptic diagram of the present invention.
In order to keep transistor T 2 and transistor T 3 that close threshold voltage shift is arranged better, circuit as shown in Figure 4, between the grid leak electrode of transistor T 1, set up a coupling capacitance C2, when Gn becomes low-voltage, C2 and the acting in conjunction of TFT stray capacitance, the suitable negative electricity that is coupled is pressed onto node N2, and the gate source voltage that increases transistor T 3 is poor, makes its threshold drift consistent with transistor transistor T 2.
With reference to Fig. 5, this is an another specific embodiment of the present invention.
Circuit structure is on the basis of circuit shown in Figure 4, and the connection that has changed memory capacitance C1 is connected between the grid and source electrode of transistor T 2 two electrode.
Although the present invention is described with reference to some embodiments, those of ordinary skill in the art will be understood that and can make many modification and change and not depart from the spirit or scope of the present invention that appended claim and equivalence thereof are limited the present invention.
Claims (7)
1, a kind of image element circuit that improves active matrix organic light-emitting device life period, it is characterized in that: this circuit comprises:
The mat woven of fine bamboo strips one transistor T 1, the control that is used to receive this line scan signals is delivered to transistor T 3 with data-signal;
Mat woven of fine bamboo strips two-transistor T2 is used under gate voltage control to light emitting diode OLED D1 supplying electric current;
The mat woven of fine bamboo strips three, the mat woven of fine bamboo strips four transistor Ts 3, T4, the control that is used to receive the current line sweep trace provides the capacitance discharges path, thereby sets the voltage on the electric capacity;
The mat woven of fine bamboo strips five transistor Ts 5, the sweep signal control that is used to receive the front row provides the path of electric capacity charging;
Memory capacitance C1 is used for charging, when charging makes transistor T 2, T3 place high voltage, transistor T 3 is opened, and on threshold voltage storage rank, Gn becomes high voltage, and Gn-1 becomes low-voltage, thereby closes transistor T 5, and transistor T 4 is opened with transistor T 1;
Light emitting diode OLED D1, be used for transistor T 2 under gate voltage control to diode OLEDD1 supplying electric current, carry out light emission operation.
2, the image element circuit that improves active matrix organic light-emitting device life period as claimed in claim 1, it is characterized in that: described image element circuit, transistor T 1 is connected on the horizontal scanning line Gn jointly with the grid of transistor T 4, the source electrode of transistor T 1 is connected in signal wire DAT, drain electrode is connected with the source electrode of transistor T 3, and transistor T 3 is connected in the source electrode that transistor T 4 gets drain electrode and transistor T 5 with transistor T 2 gate electrodes; The drain electrode of transistor T 3 is connected with the source electrode of transistor T 4; The source electrode of transistor T 2 is connected with the anode of D1, and drain electrode is connected with power lead; The gate electrode of transistor T 5 is connected with horizontal scanning line Gn-1, and drain electrode is connected with power lead; Two electrodes of capacitor C 1 are connected to transistor T 2, transistor T 3 common gate electrode node and power lead.
3, the image element circuit that improves active matrix organic light-emitting device life period as claimed in claim 1 is characterized in that: described light emitting diode OLED D1, only be furnished with one and connect with transistor T 2.
4, the image element circuit that improves active matrix organic light-emitting device life period as claimed in claim 1, it is characterized in that: described image element circuit, increased a coupling capacitance C2, double layer of metal with gate electrode that forms transistor T 1 and drain electrode forms, and is connected between the drain electrode and gate electrode of transistor T 1.
5, the image element circuit that improves active matrix organic light-emitting device life period as claimed in claim 4, it is characterized in that: described coupling capacitance C2, when Gn becomes low-voltage, C2 and the acting in conjunction of TFT stray capacitance, the suitable negative electricity that is coupled is pressed onto node N2, the gate source voltage that increases transistor T 3 is poor, makes its threshold drift consistent with transistor T 2.
6, the image element circuit that improves active matrix organic light-emitting device life period as claimed in claim 1, it is characterized in that: described image element circuit, its circuit structure is the link position that has changed memory capacitance C1, and two electrode is connected between the grid and source electrode of transistor T 2.
7, the image element circuit that improves active matrix organic light-emitting device life period as claimed in claim 1 is characterized in that: described memory capacitance C1, the electrode that connects the power supply signal line changes the anode of OLED into.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2008100356792A CN101251982B (en) | 2008-04-07 | 2008-04-07 | Pixel circuit for improving active matrix organic light-emitting device life period |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2008100356792A CN101251982B (en) | 2008-04-07 | 2008-04-07 | Pixel circuit for improving active matrix organic light-emitting device life period |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101251982A true CN101251982A (en) | 2008-08-27 |
| CN101251982B CN101251982B (en) | 2010-06-09 |
Family
ID=39955350
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2008100356792A Expired - Fee Related CN101251982B (en) | 2008-04-07 | 2008-04-07 | Pixel circuit for improving active matrix organic light-emitting device life period |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN101251982B (en) |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104464612A (en) * | 2013-09-22 | 2015-03-25 | 昆山工研院新型平板显示技术中心有限公司 | Pixel circuit and organic light emitting display adopting same |
| CN104637445A (en) * | 2015-02-03 | 2015-05-20 | 深圳市华星光电技术有限公司 | AMOLED (Active Matrix/Organic Light Emitting Diode) pixel driving circuit and pixel driving method |
| CN109036285A (en) * | 2018-06-19 | 2018-12-18 | 南京中电熊猫平板显示科技有限公司 | A kind of pixel-driving circuit and display device |
| WO2019052218A1 (en) * | 2017-09-14 | 2019-03-21 | Boe Technology Group Co., Ltd. | Pixel circuit, driving method thereof, and display apparatus |
| CN109767724A (en) * | 2019-03-11 | 2019-05-17 | 合肥京东方显示技术有限公司 | Pixel circuit, display panel, display device and image element driving method |
| CN110610684A (en) * | 2019-10-29 | 2019-12-24 | 厦门天马微电子有限公司 | Organic electroluminescent display panel and display device |
| CN111415620A (en) * | 2020-03-31 | 2020-07-14 | 合肥京东方显示技术有限公司 | Pixel circuit, driving method thereof and display device |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100373435C (en) * | 2003-09-22 | 2008-03-05 | 统宝光电股份有限公司 | Active array organic LED pixel drive circuit and its drive method |
| KR101057206B1 (en) * | 2004-04-30 | 2011-08-16 | 엘지디스플레이 주식회사 | Organic light emitting device |
| DE602006009087D1 (en) * | 2005-02-10 | 2009-10-22 | Thomson Licensing | IMAGE DISPLAY DEVICE AND METHOD FOR THEIR CONTROL |
-
2008
- 2008-04-07 CN CN2008100356792A patent/CN101251982B/en not_active Expired - Fee Related
Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104464612A (en) * | 2013-09-22 | 2015-03-25 | 昆山工研院新型平板显示技术中心有限公司 | Pixel circuit and organic light emitting display adopting same |
| CN104637445A (en) * | 2015-02-03 | 2015-05-20 | 深圳市华星光电技术有限公司 | AMOLED (Active Matrix/Organic Light Emitting Diode) pixel driving circuit and pixel driving method |
| CN104637445B (en) * | 2015-02-03 | 2017-03-08 | 深圳市华星光电技术有限公司 | AMOLED pixel-driving circuit and image element driving method |
| WO2019052218A1 (en) * | 2017-09-14 | 2019-03-21 | Boe Technology Group Co., Ltd. | Pixel circuit, driving method thereof, and display apparatus |
| CN109036285A (en) * | 2018-06-19 | 2018-12-18 | 南京中电熊猫平板显示科技有限公司 | A kind of pixel-driving circuit and display device |
| CN109036285B (en) * | 2018-06-19 | 2020-07-31 | 南京中电熊猫平板显示科技有限公司 | Pixel driving circuit and display device |
| CN109767724A (en) * | 2019-03-11 | 2019-05-17 | 合肥京东方显示技术有限公司 | Pixel circuit, display panel, display device and image element driving method |
| US11295668B2 (en) | 2019-03-11 | 2022-04-05 | Hefei Boe Display Technology Co., Ltd. | Pixel circuit, display panel, display device and pixel driving method |
| CN110610684A (en) * | 2019-10-29 | 2019-12-24 | 厦门天马微电子有限公司 | Organic electroluminescent display panel and display device |
| CN111415620A (en) * | 2020-03-31 | 2020-07-14 | 合肥京东方显示技术有限公司 | Pixel circuit, driving method thereof and display device |
| CN111415620B (en) * | 2020-03-31 | 2021-08-13 | 合肥京东方显示技术有限公司 | Pixel circuit, driving method thereof and display device |
Also Published As
| Publication number | Publication date |
|---|---|
| CN101251982B (en) | 2010-06-09 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN100541586C (en) | The image element circuit of organic light emitting display and driving method thereof | |
| CN107767814B (en) | Pixel circuit, display device and double-gate driving transistor | |
| CN100578593C (en) | Pixel circuit of active organic light-emitting device | |
| CN107424563B (en) | Organic light emitting diode display device | |
| CN102708791B (en) | Pixel unit driving circuit and method, pixel unit and display device | |
| CN101251982B (en) | Pixel circuit for improving active matrix organic light-emitting device life period | |
| CN102473376B (en) | Display device | |
| WO2016173124A1 (en) | Pixel circuit, driving method and related device thereof | |
| WO2016119304A1 (en) | Amoled pixel drive circuit and pixel drive method | |
| CN108877611B (en) | Pixel driving circuit sensing method and pixel driving circuit | |
| WO2018068392A1 (en) | Amoled pixel driver circuit, and drive method | |
| CN104157238A (en) | Pixel circuit, driving method of pixel circuit, and display device adopting pixel circuit | |
| US20210358380A1 (en) | Pixel driving circuit, organic light emitting display panel and pixel driving method | |
| CN104157239A (en) | Pixel circuit, driving method of pixel circuit, and display device adopting pixel circuit | |
| CN104700778A (en) | AMOLED (Active Matrix/Organic Light Emitting Diode) pixel driving circuit and pixel driving method | |
| CN101996579A (en) | Pixel driving circuit and method of active organic electroluminescent display | |
| CN107393478B (en) | Pixel internal compensation circuit and driving method | |
| CN101814268A (en) | Pixel circuit for improving service life of active matrix organic light-emitting display | |
| CN111599313B (en) | Pixel driving circuit, driving method and display panel | |
| CN101256738B (en) | Pixel circuit for active matrix electroluminescent devices | |
| CN104575386A (en) | AMOLED pixel driving circuit and method | |
| WO2022227231A1 (en) | Pixel circuit and display panel | |
| CN102708790A (en) | Pixel unit driving circuit and method, pixel unit and display device | |
| CN113658555A (en) | Pixel driving circuit, driving method and display panel | |
| CN105405402A (en) | Pixel circuit, drive method thereof, OLED display panel and display device |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| ASS | Succession or assignment of patent right |
Owner name: NANJING CEC-PANDA LCD TECHNOLOGY CO., LTD. Free format text: FORMER OWNER: SVA (GROUP) CO., LTD. Effective date: 20110624 |
|
| C41 | Transfer of patent application or patent right or utility model | ||
| COR | Change of bibliographic data |
Free format text: CORRECT: ADDRESS; FROM: 200233 BUILDING 3, NO. 757, YISHAN ROAD, SHANGHAI TO: 210038 NO. 9, HENGYI ROAD, NANJING ECONOMIC AND TECHNOLOGICAL DEVELOPMENT ZONE, NANJING CITY, JIANGSU PROVINCE |
|
| TR01 | Transfer of patent right |
Effective date of registration: 20110624 Address after: 210038 Nanjing economic and Technological Development Zone, Jiangsu Province, Hengyi Road, No. 9, No. Patentee after: NANJING CEC PANDA LCD TECHNOLOGY Co.,Ltd. Address before: 200233, No. 757, third floor, Yishan Road, Shanghai Patentee before: SVA OPTRONICS |
|
| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20100609 |