CN101251472B - Device and method for online real-time measurement of optical film stress by double light beams - Google Patents

Device and method for online real-time measurement of optical film stress by double light beams Download PDF

Info

Publication number
CN101251472B
CN101251472B CN2008100348207A CN200810034820A CN101251472B CN 101251472 B CN101251472 B CN 101251472B CN 2008100348207 A CN2008100348207 A CN 2008100348207A CN 200810034820 A CN200810034820 A CN 200810034820A CN 101251472 B CN101251472 B CN 101251472B
Authority
CN
China
Prior art keywords
film
stress
real
computing machine
time
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN2008100348207A
Other languages
Chinese (zh)
Other versions
CN101251472A (en
Inventor
朱冠超
方明
申雁鸣
易葵
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shanghai Institute of Optics and Fine Mechanics of CAS
Original Assignee
Shanghai Institute of Optics and Fine Mechanics of CAS
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shanghai Institute of Optics and Fine Mechanics of CAS filed Critical Shanghai Institute of Optics and Fine Mechanics of CAS
Priority to CN2008100348207A priority Critical patent/CN101251472B/en
Publication of CN101251472A publication Critical patent/CN101251472A/en
Application granted granted Critical
Publication of CN101251472B publication Critical patent/CN101251472B/en
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Landscapes

  • Length Measuring Devices By Optical Means (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

A double-beam on-line real-time optical film stress measuring device and method includes a semiconductor laser, a double-beam splitter collimator, a crystal control instrument, a position sensitive photoelectric detector, an A/D collecting card and a computer set up outside a vacuum chamber of a film coating machine, a third reflector and a crystal control probe installed in the vacuum chamber. The semiconductor laser beam is divided into two beams of parallel light by the double-beam splitter, the two beams of parallel light enter the film coating chamber through the observation window of the film coating machine, the incident light is adjusted to irradiate on a substrate to be measured, the two beams of reflected light are emitted from the observation window after the direction of the reflected light is adjusted by the reflector and received by the position sensitive photoelectric detector, and the computer collects the signals of the position sensitive photoelectric detector and the information of the crystal control instrument about the thickness and the speed of the film in real time, processes data and displays the real-time change information of the stress of the optical film in real time. The invention has the characteristics of simple structure, convenient operation, compatibility and strong anti-interference capability, and can obtain the stress information of the optical film on line.

Description

The device of double beam on-line real-time optical thin film stress and measuring method thereof
Technical field
The present invention relates to optical thin film, is a kind of device and measuring method thereof of double beam on-line real-time optical thin film stress.
Background technology
All films nearly all are among certain stress, and its existence can cause the film be full of cracks, curls even come off, thereby have limited the stability and the function of membrane structure.The reason that produces stress is very complicated, mainly contains two kinds: the one, cause owing to the thermal expansion of film and substrate is different, and be called thermal stress; A kind of is that non-equilibrium property or the distinctive micromechanism of film in the thin film growth process causes, is called internal stress.In order to distinguish internal stress and thermal stress,, in the thin-film-coating process, measure stress in real time and be very important in order counter stress mechanism to obtain more deep research.
Before Shanghai Optics and Precision Mechanics institute, Chinese Academy of Sciences proposed real-time measuring device for high precision thin-film stress (application number: 2006101184328, publication number: 1971248), but this device still has weak point
And this device is than the improvement that three aspects have been arranged.At first be the principle of having utilized twin-beam, improved interference capability such as system's anti-vibration; The secondth, added brilliant control probe, can obtain the information of film thickness in real time, thereby realize that really stress measures in real time; Be at last on software systems, regulate by program and simplified the light path adjusting, user-friendly for operation, friendly interface, and function is also abundanter.
Summary of the invention
The present invention is the device and the measuring method thereof of a kind of double beam on-line real-time optical thin film stress of proposing for STRESS VARIATION in the deep research thin-film-coating process, this device has simple in structure, easy to operate, good with the coating machine compatibility, stability characteristics such as strong.
Technical solution of the present invention is as follows:
A kind of device of double beam on-line real-time optical thin film stress, be characterized in that this device comprises semiconductor laser, the twin-beam that is formed by beam splitter and first catoptron and second arrangement of mirrors divides beam collimator, the 3rd catoptron, crystalline substance control instrument with brilliant control probe, the quick photodetector in position, A/D capture card and computing machine, its position relation is as follows: described semiconductor laser is set outside coating machine, twin-beam divides beam collimator, brilliant control instrument, the quick photodetector in position, A/D capture card and computing machine, in vacuum chamber, install film plating substrate to be measured, described the 3rd catoptron and brilliant control probe, make the emergent light of described semiconductor laser after described twin-beam divides beam collimator, become two bundle directional lights, watch window by the coating machine vacuum chamber shines film plating substrate surface to be measured, its reflected light is through shining from described watch window after described the 3rd mirror reflects on the quick photodetector in position outside the vacuum chamber, and the reflected light displacement deflection amount that this quick photodetector is surveyed is input to computing machine by the A/D capture card; Simultaneously described brilliant control probe real time record is coated with the variation of film thickness and rate of sedimentation in the optical thin film process, imports described computing machine by described brilliant control instrument.
Utilize above-mentioned double beam on-line real-time optical thin film stress device to carry out the measuring method of optical thin film stress, comprise the following steps:
1. the position of each components and parts relation is installed each components and parts and film plating substrate to be measured in the above-mentioned double beam on-line real-time optical thin film stress device; Adjust light path, make the emergent light of described semiconductor laser after described twin-beam divides beam collimator, become two bundle directional lights, watch window by the coating machine vacuum chamber shines on the center symmetric position on film plating substrate surface to be measured, and its reflected light is through shining from described watch window after described the 3rd mirror reflects on the quick photodetector in position outside the vacuum chamber;
2. before plated film begins, on the software systems master interface of computing machine, click the initialization button earlier, set beamwidth, incident angle and the reflection light path of twin-beam of elastic modulus, Poisson ratio, thickness, the incident of described film plating substrate, the string slogan of brilliant control instrument is set simultaneously;
3. when plated film begins, click the start button at main interface, computing machine begins image data: one is the information by facula position on the position sensitive detector of USB interface acquisition, another is by the real-time thickness of crystalline substance control instrument upper film of serial ports acquisition and the information of coated film deposition speed, in whole coating process, computing machine carries out data processing according to following formula
σ = E s * t s 2 * cos α 12 ( 1 - γ s ) * t f * L * D 0 * d ,
And real-time rendering optical thin film stress change curve and displacement changing curve, preserve in real time and display beams yaw displacement, stress intensity, plated film time, film thickness and rate of sedimentation;
4. after plated film finishes, click the exit button on the software systems master interface, computing machine promptly stops data collection, and quits a program.
The software systems that comprise this device in the described computing machine, coding is realized real-time thickness of film and beam deflection displacement acquisition, the line data of going forward side by side is handled, draw the optical thin film stress change curve, preserve in real time and information such as display beams displacement, plated film time, film thickness and rate of sedimentation, so that be for further processing.
Technique effect of the present invention:
1, the present invention adopts the beam deflection method, utilizes the double-beam principle online in real time to measure optical thin film stress.Building structure is simple, and double-beam system stability had raising, and antijamming capability is strong.
2, the present invention adopts brilliant control instrument to gather the real-time information of film thickness and rate of sedimentation in the coating process, and passes to Computer Processing and preserve by RS-232 serial ports standard.The acquisition of thickness information is just really jumped out from the category of the total power of MEASUREMENTS OF THIN, has realized the measurement of membrane stress.
3, software systems of the present invention adopt Visual Basic6.0 language compilation, friendly interface, feature richness, provide each to need parameter initialization input, port numbers is provided with, USB mouth and serial communication, and real-time rendering beam deflection displacement curve and stress measurement curve are preserved information such as plated film time, the real-time thickness of film, rate of sedimentation, stress value simultaneously.Programming standardization simultaneously further expands the space.
4, major equipment of the present invention is convenient to build and safeguard in the coating chamber outside.And can build on arbitrary the coating machine, device is compatible good.
5, the present invention adopts the quick photodetector precision height in position, and the signal that obtains is handled easily.
Description of drawings
Fig. 1 is the device one-piece construction synoptic diagram of double beam on-line real-time optical thin film stress of the present invention.
Fig. 2 is the light path principle figure of the device of double beam on-line real-time optical thin film stress of the present invention.
Fig. 3 is the device software system flowchart of double beam on-line real-time optical thin film stress of the present invention.
Fig. 4 is the interface synoptic diagram of the device software system of double beam on-line real-time optical thin film stress of the present invention.
Embodiment
The invention will be further described below in conjunction with embodiment and accompanying drawing, but should not limit protection scope of the present invention with this.
See also Fig. 1 earlier, Fig. 1 is the device one-piece construction synoptic diagram of double beam on-line real-time optical thin film stress of the present invention.As seen from the figure, the device of double beam on-line real-time optical thin film stress of the present invention, comprise semiconductor laser 1, the twin-beam that is combined by beam splitter 2 and first catoptron 3 and second catoptron 4 divides beam collimator, the 3rd catoptron 5, crystalline substance control instrument 8 with brilliant control probe 7, the quick photodetector 11 in position, A/D capture card 10 and computing machine 9, its position relation is as follows: described semiconductor laser 1 is set outside coating machine, twin-beam divides beam collimator, brilliant control instrument 8, the quick photodetector 11 in position, A/D capture card 10 and computing machine 9, in vacuum chamber, install film plating substrate to be measured 6, described the 3rd catoptron 5 and brilliant control probe 7, make the emergent light of described semiconductor laser 1 after described twin-beam divides beam collimator, become two bundle directional lights, watch window by the coating machine vacuum chamber shines film plating substrate to be measured 6 surfaces, its reflected light is through described the 3rd catoptron 5 reflection back shines a quick photodetector 11 vacuum chamber outside from described watch window on, and the reflected light displacement deflection amount of these quick photodetector 11 detections is input to computing machine 9 by A/D capture card 10; Simultaneously described brilliant control probe 7 real time record are coated with the variation of film thickness and rate of sedimentation in the optical thin film process, by the described computing machine 9 of described brilliant control instrument 8 inputs.
Fig. 2 is the optical schematic diagram of the device of double beam on-line real-time optical thin film stress of the present invention.As shown in the figure, beamwidth is D 0Two bundle directional lights shine on the film plating substrate 6, along with substrate bends in coating process, cause the beamwidth of two parallel beams that reflect that variation has taken place, become D by diagram 0+ d.The incident angle of supposing two parallel beams is α, and the reflection light path is L, and the angle of two folded light beams is θ, and the radius-of-curvature of substrate bending is R, then:
θ 2 = D 0 cos α * R - - - ( 1 )
And θ=d/L (2)
Thereby obtain: 1 R = d * cos α 2 * D 0 * L - - - ( 3 )
If the elastic modulus of substrate is E s, Poisson ratio is γ s, substrate thickness is t s, film thickness is t f, then membrane stress σ can be determined by following formula:
σ = E s * t s 2 6 * ( 1 - γ s ) * t f ( 1 R - 1 R 0 ) - - - ( 4 )
Then σ = E s * t s 2 * cos α 12 ( 1 - γ s ) * t f * L * D 0 * d - - - ( 5 )
Obtain displacement deflection amount d by the quick photodetector 11 in position, this device adopts the PIN structure, when light beam incident puts in place in the photosurface of quick photodetector, produce electron-hole pair, reach of the electrode output of the charge carrier of P type layer by the device two ends, the size of its output current and light incident light electric position are inversely proportional to the distance of electrode, can calculate the accurate position d of light beam incident thus.This positional information is sent to computing machine 9 by A/D capture card 10 by USB interface.Pass through serial ports about the data of film thickness on the brilliant control instrument 8, gather by computing machine 9 according to rs-232 standard.
The software systems that comprise this device in the described computing machine, coding is realized real-time thickness of film and beam deflection displacement acquisition, the line data of going forward side by side is handled, draw the optical thin film stress change curve, preserve in real time and information such as display beams displacement, plated film time, film thickness and rate of sedimentation, so that be for further processing.
The software systems of this device have realized for the collection of above-mentioned two aspect data and real-time stress Calculation of optical thin film and curve plotting.The process flow diagram of this program is seen accompanying drawing 3.
Described laser instrument 1 is a semiconductor laser, includes a colimated light system, and laser beam divergent angle is little, and collimation is good.
Utilize described double beam on-line real-time optical thin film stress device to carry out the measuring method of optical thin film stress, comprise the following steps:
1. by the position relation of each components and parts in the described double beam on-line real-time optical thin film stress device each components and parts and film plating substrate 6 to be measured are installed; Adjust light path, make the emergent light of described semiconductor laser 1 after described twin-beam divides beam collimator, become two bundle directional lights, watch window by the coating machine vacuum chamber shines on the center symmetric position on film plating substrate to be measured 6 surfaces, and its reflected light is through described the 3rd catoptron 5 reflection back shines a quick photodetector 11 outside the vacuum chamber from described watch window on;
2. before plated film begins, on the software systems master interface of computing machine, click the initialization button earlier, set beamwidth, incident angle and the reflection light path of twin-beam of elastic modulus, Poisson ratio, thickness, the incident of described film plating substrate, the string slogan of brilliant control instrument 8 is set simultaneously;
3. when plated film begins, click the start button at main interface, computing machine 9 beginning image data: one is the information by facula position on the position sensitive detector 11 of USB interface acquisition, another is by the real-time thickness of crystalline substance control instrument 8 upper films of serial ports acquisition and the information of coated film deposition speed, in whole coating process, computing machine carries out data processing according to following formula
σ = E s * t s 2 * cos α 12 ( 1 - γ s ) * t f * L * D 0 * d ,
And real-time rendering optical thin film stress change curve and displacement changing curve, preserve in real time and display beams yaw displacement, stress intensity, plated film time, film thickness and rate of sedimentation;
4. after plated film finishes, click the exit button on the software systems master interface, computing machine 9 promptly stops data collection, and quits a program.
Described catoptron 5 is high-quality catoptrons that the surface has been coated with reflective film.It is fixed on the shelf that can regulate direction, places internal vacuum chamber, thereby the furnishing emergent ray shines on the quick photodetector 11 that puts in place.
Described brilliant control 7 and brilliant control instrument 8 are to be coated with the device that obtains film thickness information in the process in real time at optical thin film.Only obtain thickness information, could realize the on-line measurement of membrane stress.By serial ports film thickness is passed to computing machine 9 in real time.
Owing to added the program of handling facula position in the software systems, so need not make when regulating light path the outgoing hot spot shine the center of photosurface, reduced the difficulty of light path adjusting work, it is easier to operate.
Experiment shows that it is simple in structure, easy to operate that the present invention has, characteristics such as good stability, the variation of can online in real time measuring stress in being coated with the optical thin film process.

Claims (2)

1. the device of a double beam on-line real-time optical thin film stress, it is characterized in that this device comprises semiconductor laser (1), divide beam collimator by beam splitter (2) and the twin-beam that first catoptron (3) and second catoptron (4) combine, the 3rd catoptron (5), crystalline substance control instrument (8) with brilliant control probe (7), position quick photodetector (11), A/D capture card (10) and computing machine (9), its position relation is as follows: described semiconductor laser (1) is set outside coating machine, twin-beam divides beam collimator, brilliant control instrument (8), position quick photodetector (11), A/D capture card (10) and computing machine (9), in vacuum chamber, install film plating substrate to be measured (6), described the 3rd catoptron (5) and brilliant control probe (7), make the emergent light of described semiconductor laser (1) after described twin-beam divides beam collimator, become two bundle directional lights, watch window by the coating machine vacuum chamber shines film plating substrate to be measured (6) surface, its reflected light is through described the 3rd catoptron (5) reflection back shines a quick photodetector (11) vacuum chamber outside from described watch window on, and the reflected light displacement deflection amount of this quick photodetector (11) detection is input to computing machine (9) by A/D capture card (10); Simultaneously described brilliant control probe (7) real time record is coated with the variation of film thickness and rate of sedimentation in the optical thin film process, imports described computing machine (9) by described brilliant control instrument (8).
2. utilize the described double beam on-line real-time optical thin film stress of claim 1 device to carry out the method that optical thin film stress is measured, it is characterized in that comprising the following steps:
1. by the position relation of each components and parts in the described double beam on-line real-time optical thin film stress of claim 1 device each components and parts and film plating substrate (6) to be measured are installed; Adjust light path, make the emergent light of described semiconductor laser (1) after described twin-beam divides beam collimator, become two bundle directional lights, shone by the watch window of coating machine vacuum chamber on the center symmetric position on film plating substrate to be measured (6) surface, its reflected light is through described the 3rd catoptron (5) reflection back shines a quick photodetector (11) outside the vacuum chamber from described watch window on;
2. before plated film begins, on the software systems master interface of computing machine, click the initialization button earlier, set beamwidth, incident angle and the reflection light path of twin-beam of elastic modulus, Poisson ratio, thickness, the incident of described film plating substrate, the string slogan of brilliant control instrument (8) is set simultaneously;
3. when plated film begins, click the start button at main interface, computing machine (9) beginning image data: the information that goes up facula position by the quick photodetector in position (11) of USB interface acquisition, by the real-time thickness of crystalline substance control instrument (8) upper film of serial ports acquisition and the information of coated film deposition speed, in whole coating process, computing machine carries out data processing according to following formula, and real-time rendering optical thin film stress change curve and displacement changing curve, preserve in real time and display beams yaw displacement, stress intensity, plated film time, film thickness and rate of sedimentation
σ = E s * t s 2 * cos α 12 ( 1 - γ s ) * t f * L * D 0 * d ,
In the formula: σ is a membrane stress, D 0Be the width of light beam, d is the increment of the wide variety of light beam, and α is the incident angle of light beam, and L is reflection light path, E sBe elastic modulus, γ sBe Poisson ratio, t sBe substrate thickness, t fBe film thickness;
4. after plated film finishes, click the exit button on the software systems master interface, computing machine (9) promptly stops data collection, and quits a program.
CN2008100348207A 2008-03-19 2008-03-19 Device and method for online real-time measurement of optical film stress by double light beams Expired - Fee Related CN101251472B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN2008100348207A CN101251472B (en) 2008-03-19 2008-03-19 Device and method for online real-time measurement of optical film stress by double light beams

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN2008100348207A CN101251472B (en) 2008-03-19 2008-03-19 Device and method for online real-time measurement of optical film stress by double light beams

Publications (2)

Publication Number Publication Date
CN101251472A CN101251472A (en) 2008-08-27
CN101251472B true CN101251472B (en) 2010-06-02

Family

ID=39954973

Family Applications (1)

Application Number Title Priority Date Filing Date
CN2008100348207A Expired - Fee Related CN101251472B (en) 2008-03-19 2008-03-19 Device and method for online real-time measurement of optical film stress by double light beams

Country Status (1)

Country Link
CN (1) CN101251472B (en)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104028891B (en) * 2013-03-06 2016-06-15 中国科学院理化技术研究所 Welding system for online monitoring laser crystal strain and online monitoring method thereof
CN104748690B (en) * 2013-12-25 2018-01-12 远景能源(江苏)有限公司 Determine the Raman optical spectrum method of the thickness of Amorphous solids electrolyte interface film
US9921149B2 (en) * 2015-04-24 2018-03-20 Otsuka Electronics Co., Ltd. Optical measurement apparatus and optical measurement method
CN106197295B (en) * 2016-07-20 2017-10-24 华中科技大学 A kind of laser thickness gauge
CN106383000B (en) * 2016-09-01 2019-09-10 河北工业大学 A kind of device of the double Electro-optical Modulation real-time measurement optical material microstresses of based single crystal body
CN109827680B (en) * 2019-03-19 2021-01-15 合肥工业大学 Three-dimensional high-sensitivity micrometer based on CMOS sensor
CN112964409B (en) * 2021-02-06 2022-02-22 中国工程物理研究院激光聚变研究中心 Vacuum stress tester for large-caliber optical element
CN114396876B (en) * 2022-01-24 2023-06-16 中国工程物理研究院机械制造工艺研究所 Laser transmission repeated positioning precision detection device, system and detection method

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6765677B1 (en) * 2000-10-25 2004-07-20 Holotech A.S. Method and device for non-destructive real-time measurements of residual stresses in planar and non-planar objects
CN1821748A (en) * 2006-03-30 2006-08-23 西安电子科技大学 Optical sensor for thin film detection
CN1971248A (en) * 2006-11-17 2007-05-30 中国科学院上海光学精密机械研究所 High-precision film stress real-time measuring device and measuring method
CN201173895Y (en) * 2008-03-19 2008-12-31 中国科学院上海光学精密机械研究所 Double-beam on-line real-time optical film stress measuring device

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6765677B1 (en) * 2000-10-25 2004-07-20 Holotech A.S. Method and device for non-destructive real-time measurements of residual stresses in planar and non-planar objects
CN1821748A (en) * 2006-03-30 2006-08-23 西安电子科技大学 Optical sensor for thin film detection
CN1971248A (en) * 2006-11-17 2007-05-30 中国科学院上海光学精密机械研究所 High-precision film stress real-time measuring device and measuring method
CN201173895Y (en) * 2008-03-19 2008-12-31 中国科学院上海光学精密机械研究所 Double-beam on-line real-time optical film stress measuring device

Non-Patent Citations (6)

* Cited by examiner, † Cited by third party
Title
M. Bicker, et al..Optical deflection setup for stress measurements in thin films.Rev. Sci. Instrum.69 2.1998,69(2),460-462.
M. Bicker, et al..Optical deflection setup for stress measurements in thin films.Rev. Sci. Instrum.69 2.1998,69(2),460-462. *
占美琼等.石英晶体振荡法监测膜厚研究.光子学报33 5.2004,33(5),585-588.
占美琼等.石英晶体振荡法监测膜厚研究.光子学报33 5.2004,33(5),585-588. *
胡志敏等.半导体薄膜特性实时检测的新装置.半导体技术30 7.2005,30(7),25-33.
胡志敏等.半导体薄膜特性实时检测的新装置.半导体技术30 7.2005,30(7),25-33. *

Also Published As

Publication number Publication date
CN101251472A (en) 2008-08-27

Similar Documents

Publication Publication Date Title
CN101251472B (en) Device and method for online real-time measurement of optical film stress by double light beams
CN100543493C (en) Structure and detection method thereof based on the Doppler anemometry laser radar of F-P etalon
CN101923000B (en) Optical measuring device with high reflectivity and high transmissivity
CN101251484B (en) Miniature fourier transform spectrometer based on modulation
CN201837582U (en) Integrated optical ozone yield detection device
CN101358923B (en) Apparatus for measuring refractive index of ultraviolet optical material
CN102213675A (en) Angle adjustable multichannel optical fiber surface plasmon resonance sensing probe
CN105938041B (en) A kind of infrared thermal imager capability evaluating device
CN201173895Y (en) Double-beam on-line real-time optical film stress measuring device
CN103105284A (en) Device and method for measuring transmittance of optical components of illumination system in photoetching machine
CN102419247B (en) High-precision detection device and method of reflection type optical fiber turbulence
CN106646429A (en) Apparatus and method for geometric factor self-calibration of laser radar
CN109470177B (en) Three-dimensional angle measuring method and device based on double gratings
CN104833816A (en) Laser doppler velocity measurement device based on rotating grating and velocity measurement method of laser doppler velocity measurement device
CN108132142A (en) Detection device and method for large-caliber reflection optical system
CN108594258A (en) Amendment type tachogenerator and its calibration based on Doppler effect and measurement method
CN110530257A (en) Femto-second laser distribution interferometer system
CN106597467B (en) A kind of rangefinder based on HOM principle of interference
CN201203578Y (en) Minitype Fourier transformation spectrometer
CN1971248A (en) High-precision film stress real-time measuring device and measuring method
CN204575674U (en) Based on the laser Doppler speed measuring device of rotating grating
CN105043305B (en) A kind of Quantum Correlation autocollimator and angle-measuring method
CN103345129A (en) Method for measuring transmittance of all illumination systems and components in photoetching machine
CN105393106B (en) Device for measuring scattering of a sample
CN208283558U (en) Amendment type velocity sensor based on Doppler effect

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant
C17 Cessation of patent right
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20100602

Termination date: 20130319