CN101250686A - Control of magnetic leakage flux in sputter targets containing both magnetic and non-magnetic elements - Google Patents

Control of magnetic leakage flux in sputter targets containing both magnetic and non-magnetic elements Download PDF

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CN101250686A
CN101250686A CNA2007101085613A CN200710108561A CN101250686A CN 101250686 A CN101250686 A CN 101250686A CN A2007101085613 A CNA2007101085613 A CN A2007101085613A CN 200710108561 A CN200710108561 A CN 200710108561A CN 101250686 A CN101250686 A CN 101250686A
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magnetic
ptf
microstructure
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K·H·钟
D·R·马克思
B·孔克尔
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Heraeus Inc
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    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
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    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
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    • H01FMAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F1/00Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01FMAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
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    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
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Abstract

Various exemplary embodiments of the present invention relate to a method for controlling magnetic leakage flux in a sputtering target containing magnetic and non-magnetic elements. The method relates to selecting a particle size of at least one non-magnetic phase in a microstructure, where the particle size of the non-magnetic phase is greater than or equal to one micron. The non-magnetic phase is combined with at least one magnetic phase in the microstructure, where the magnetic phase is greater than or equal to 10 atomic percent and is greater than one micron in size. The selected particle size of the non-magnetic phase decreases the diffusion between the magnetic and non-magnetic phases in the microstructure, and may increase the pass through flux (PTF) of the sputtering target. The magnetic phase and non-magnetic phases may be combined in the microstructure by hot isostatic pressing, sintering, spark plasma sintering, or vacuum hot pressing.

Description

Control contain be magnetic and the sputtering target of nonmagnetic elements in leakage magnetic flux
Technical field
[0001] the present invention relates to control contain be magnetic and the sputtering target of nonmagnetic elements in the method for magnetic flux.More specifically, the present invention relates to the size by non magnetic phase in the control microstructure and distribute, control contain be magnetic and the sputtering target of nonmagnetic elements in the method for magnetic flux.
Background of invention
[0002] sputtering technology is widely used in the thin film deposition of material to the expectation substrate.Typical sputtering system comprises that the source that is used to produce electron beam or ionic fluid, the target that comprises the material that will be atomized (sputter) and sputter material are deposited substrate thereon.This technology is included under the angle with electron beam or ion beam bombardment target material, makes target material by sputter or by ablation.Sputter target material is deposited in the substrate as film or layer.The target material scope that is used for sputtering technology from pure metal in addition more complicated alloy.
[0003] magnetron sputtering comprises the back that permanent magnet or electromagnet is arranged in target material (negative electrode), and applies magnetic field to this target.On magnetic field penetration target that is applied and the front that discharge plasma is focused on target.The quantity that penetrates the magnetic flux of target is measurable and is commonly called " passing flux " (pass through flux (PTF)) or " leakage magnetic flux " (magnetic leakage flux (MLF)).The front face surface of target is atomized, subsequently target atom be deposited on film former spare that contiguous this target places above.
[0004] magnetron sputtering of magnetic target material is very general in electron trade, particularly in the manufacturing of semi-conductor and data storage device.Because the soft magnetic property of magnetic target alloy, there is considerable shunting in the magnetic field that applies in target body.This causes the target utilization that reduces again, and the magnetic field concentration that reason is to penetrate is in the ablation groove that forms because of shunting.This concentration effect is followed the increase of material magnetic permeability and is aggravated (corresponding to reducing of material PTF).
[0005] magnetic permeability that reduces target material makes that the ablation situation is more not serious, and this has improved the utilization of target material and has therefore helped reduction on the material cost.The existence of serious target ablation situation also promotes point source sputtering phenomenon (point source sputtering phenomena), and this may cause the thickness of deposited film homogeneity than the best difference.Therefore, reduce the target material magnetic permeability and have the inhomogeneity additional benefit of the thickness of deposited film of increasing.
[0006] PTF of sputtering target is defined as penetrating magnetic field and the ratio that applies magnetic field.100% PTF value shows nonmagnetic substance, wherein the magnetic field that is applied none passed through target body by shunting.The PTF of magnetic target material typically is defined in 0 to 100% the scope, and wherein the bill of material of most commercial productions reveals the value between 30% to 100%.
[0007] there is the technology of several different measurement PTF.A kind of technology comprises the magnet of placing 4.4 (+/-0.4) kilogauss crust, and contact is on a side of target material, and the axial hall probe (Hall probe) that contacts the target material opposite side with utilization is monitored the magnetic field that penetrates.The maximum value in magnetic field that penetrated target body is divided by being defined as PTF in the field intensity that (keeps with identical apart from the interval when target is positioned between them) between magnet and the probe being applied under the situation that does not have target.PTF can be expressed as mark or per-cent.
[0008] another technology of measuring PTF comprises use horse-shoe magnet and horizontal hall probe.Use different magnets and probe to arrange that measured PTF value is found the good linear dependence that shows for normally used field strength values in the industry.The PTF measuring technology is built as near the magnetic flux that applies that exists in the actual magnetic control sputter.Therefore, PTF measures the magneticsubstance performance in the magnetron sputtering process is had direct practicality.
[0009] magneticsubstance PTF and magnetic permeability are not separate.On the contrary, between the PTF of magneticsubstance and maximum permeability, has very strong reverse dependency.The magnetic permeability value of material can very accurately be measured by using vibrating sample magnetometer (vibrating-sample-magnetometer (VSM)) technology according to ASTM standard A 894-89.
[0010] PTF depends on the material characteristics of sputtering target thickness and sputtering target.The thick magnetic characteristic that is subject to material of maximum target.Because the thickness characteristics of general target, so in sputtering technology, must often replace target.In addition, sputter productivity also is subject to the consistency of target PTF and negative electrode.Specific magnetron cathode may have bigger sputter productivity for the target material with specific PTF scope.
[0011] therefore, need be control contain be magnetic and the sputtering target of nonmagnetic elements in the improving one's methods of magnetic flux.What further need is the microstructural method of control, so that increase PTF and make thicker target, makes that being used for target metathetical system by minimizing makes sputter productivity improve stoppage time.What need in addition is to regulate PTF adapting to the method for predetermined negative electrode, thereby improves sputter productivity.
Summary of the invention
[0012] various embodiment of the present invention is conceived to control the typical systems of magnetic flux in the sputtering target and the above-mentioned defective of method.
[0013] various illustrative embodiments of the present invention relates to the method for controlling leakage magnetic flux (magnetic leakage flux) in the sputtering target that contains magnetic element and nonmagnetic elements.This method relates to the granularity of selecting at least a non magnetic phase in microstructure, and wherein the granularity of this non magnetic phase is more than or equal to 1 micron.The granularity of non magnetic phase can be selected as more than or equal to 10 microns.In microstructure, at least a non magnetic and at least a magnetic combines, and wherein said at least a magnetic is more than or equal to 10 atomic percentages, and wherein the described at least a magnetic in microstructure mutually size be more than 1 micron.The selection granularity of described at least a non magnetic phase has reduced in the microstructure at least a magnetic mutually and the diffusion between at least a non magnetic phase.Select the granularity of described at least a non magnetic phase, making increases the passing flux (pass through flux (PTF)) of sputtering target by reducing at least a magnetic in the microstructure and at least a non magnetic diffusion between mutually.Described at least a magnetic non magneticly can be passed through hot isostatic pressing, sintering, discharge plasma sintering or vacuum hotpressing combination in microstructure mutually with at least a mutually.
[0014] in various illustrative embodiments, sputtering target can be the Co-Cr-Pt target.In some embodiments, sputtering target further with oxide compound such as TiO 2, SiO 2Or other any suitable oxide compound forms alloy.In various illustrative embodiments of the present invention, the leakage magnetic flux of target can be used as the function of Pt phase granularity and changes.For example platina (Pt) particle can be selected, so that reduce platinum (Pt) particle and the diffusion that contains between cobalt (Co) particle, bigger platinum (Pt) zone of maintenance in matrix material wherein is to increase passing flux (PTF).For example, it is more than or equal to 1 micron that platina (Pt) particle can be controlled as size, and can be preferably size more than or equal to 10 microns.Although at least a non magnetic in the microstructure can be controlled as similar magnitude range mutually.In various illustrative embodiments, the size of the non magnetic phase in the microstructure or distribution or its combination change, to adjust the leakage magnetic flux of target.
[0015] the various advantages of illustrative embodiments of the present invention include but not limited to control the PFT of sputtering target.In plasma gas phase deposition (PVD) or sputter system, plasma body is limited to approach sputtering surface by high-intensity magnetic field (magnetron cathode), thereby promotes sputter rate to improve.Magnetic Field Source is positioned at the back of target, and magnetic field must be through cathode construction material and sputter target material, plasma body is limited access to the target surface under enough intensity.Because PTF depends on target thickness and target material feature, so maximum target thickness is subject to the magnetic characteristic of material.To increase PTF, can produce thicker target by the control microstructure, it can be used for the sputter productivity that target metathetical system produces raising stoppage time by minimizing.In addition, the microstructure of control combination thing also can minimize and Co-Cr-Pt-oxide compound alloy (for example, Cr-Co-SiO to increase PTF 2, Cr-Co-Pt-TiO 2Deng) in particle produce relevant typical problem, wherein may produce the uneven thickness and the distribution on sputtering target surface.Therefore, making the suitable particular cathode of PTF of target is favourable to improve sputter productivity, and the target that wherein has modulation PTF has improved the homogeneity and the thickness characteristics of target.
[0016] as high-temperature concretion technology, Co-Cr-Pt-oxide compound alloy (for example, Cr-Co-SiO 2, Cr-Co-Pt-TiO 2Deng) result of phase mutual diffusion between the powder blend component, form magnetic phase (magneitcally susceptible phase), thereby the shunting that applies magnetic field is provided, and therefore reduced PTF.In various illustrative embodiments of the present invention, the magnetic loss evil amount mutually that the granularity of selection platinum (Pt) and CoCr master alloying may reduce PTF minimizes.For given consolidation technique, by suitable selection to powder, the expectation PTF level of people can " control (dialin) " sputtering target.Therefore, the advantage of the various illustrative embodiments of the present invention is to allow modulation PTF, and the best requirement with the coupling sputter cathode provides the ability of meeting consumers' demand better.In addition, advantage of the present invention is to select the material of sputtering target, makes them have the predetermined PTF scope of expectation or controlled PTF scope.
Should be appreciated that from the following detailed description that [0017] it is obvious easily that other embodiment of the present invention will become to those skilled in the art, various embodiments wherein of the present invention only are to illustrate by way of example and be shown and described.As will being recognized, the present invention that can have other with different embodiments, and its several details can make amendment at various different aspects, all these does not deviate from the spirit and scope of the present invention.Therefore, accompanying drawing and detailed being described in are considered to exemplary in essence but not are determinate.
Description of drawings
[0018] with reference now to accompanying drawing, wherein identical reference number is represented corresponding part in the whole text:
[0019] Fig. 1 is the exemplary Co-Cr-Pt-TiO of the various illustrative embodiments according to the present invention 2The SEM image of particulate composite has been described four independent measurement zones (promptly compose 1, spectrum 2, spectrum 3 and compose 4), and described zone has various magnetic in the microstructure with mutually non magnetic;
[0020] Fig. 2 is energy dispersion X-ray spectral analysis (EDS) figure, has described according to the present invention Co-Cr-Pt-TiO among Fig. 1 of various illustrative embodiments 2The existence of the non magnetic Pt phase in spectrum 1 district's microstructure of particulate composite;
[0021] Fig. 3 is EDS figure, has described according to the present invention Co-Cr-Pt-TiO among Fig. 1 of various illustrative embodiments 2Co and Cr existence mutually in spectrum 2 district's microstructures of particulate composite;
[0022] Fig. 4 is EDS figure, has described according to the present invention Co-Cr-Pt-TiO among Fig. 1 of various illustrative embodiments 2Co phase in spectrum 3 district's microstructures of particulate composite;
[0023] Fig. 5 is EDS figure, has described according to the present invention Co-Cr-Pt-TiO among Fig. 1 of various illustrative embodiments 2Co in spectrum 4 district's microstructures of particulate composite and Pt are mutually;
[0024] Fig. 6 A is the Co-Cr-Pt-TiO of the various illustrative embodiments according to the present invention 2The SEM image of particulate composite, this matrix material has 81% PTF;
[0025] Fig. 6 B is the Co-Cr-Pt-TiO of the various illustrative embodiments according to the present invention 2The SEM image of particulate composite, this matrix material has 68% PTF;
[0026] Fig. 7 is a chart, illustrates Fig. 6 A of the various illustrative embodiments according to the present invention and the Co-Cr-Pt-TiO of 6B 2The granularity of particulate composite concerns volume fraction;
[0027] Fig. 8 A is the EDS spectrogram of particulate composite of Fig. 6 A of the various illustrative embodiments according to the present invention, and wherein this spectrogram shows, the Co content in the Pt particle is lower, so the diffusion between the microstructure particle is less;
[0028] Fig. 8 B is the EDS spectrogram of particulate composite of Fig. 6 B of the various illustrative embodiments according to the present invention;
[0029] Fig. 9 A is the Cr-Co-Pt-SiO of the various illustrative embodiments according to the present invention 2The SEM image of particulate composite, this matrix material be with 927 ℃ hot isostatic pressing (HIP) Temperature Treatment, to reach 68% PTF;
[0030] Fig. 9 B is the Cr-Co-Pt-SiO of the various illustrative embodiments according to the present invention 2The SEM image of particulate composite, this matrix material be with 1300 ℃ hot isostatic pressing (HIP) Temperature Treatment, to reach 54% PTF;
[0031] Figure 10 A is according to various illustrative embodiments of the present invention, has the Co-Cr-Pt-TiO of 64%PTF 2The SEM image of particulate composite wherein uses the Co-Cr powdered alloy;
[0032] Figure 10 B is various illustrative embodiments according to the present invention, has the Co-Cr-Pt-TiO of 52%PTF 2The SEM image of particulate composite;
[0033] Figure 11 is according to various illustrative embodiments of the present invention, increases Co alloy material such as Co-Cr-Pt-TiO 2In the influence of atomic percentage of Cr content.
Embodiment
[0034] description as described below is intended to the description as the various embodiments of the present invention in conjunction with the accompanying drawings, is not to be intended to represent that the present invention can be put into practice that embodiment is only arranged.Detailed description has comprised detail, and purpose provides to be understood fully to of the present invention.Yet to those skilled in the art clearly, the present invention can be implemented under the situation of these details not having.
[0035] Fig. 1-5 illustrates Co-Cr-Pt-TiO 2The various exemplary phase of particulate composite has wherein been selected and has been arranged element and mutually atomic percentage, reaching the PTF of expectation.Various can coexist each other mutually (for example, as microstructural magnetic of institute's diagrammatic among Fig. 1 and the diagram of non magnetic institute mutually) perhaps can be isolating (for example, the non magnetic Pt phase of Fig. 2), and this depends on Co-Cr-Pt-TiO 2The microstructural zone of particulate composite.These can be magnetic or nonmagneticly can adjust mutually, so that the PTF that increases or reduce to expect.For example, microstructural particulate granularity and distribution can be selected, so that control microstructural particulate diffusion.Therefore, granularity by control element and magnetic and non magnetic arranging mutually can produce the PTF of expectation in sputtering target just.
[0036] Fig. 1 is exemplary Co-Cr-Pt-TiO 2The SEM image of particulate composite has been described different zone (promptly composing 1 to spectrum 4).For example, zone 10 (spectrum 1), zone 20 (spectrum 2), zone 30 (spectrum 3) and zone 40 (composing 4) illustrate different elements and mutually selection and distribution, so that at Co-Cr-Pt-TiO 2Reach the PTF of expectation in the matrix material.These zones (i.e. zone 10,20,30 and 40) can have magnetic or mutually non magnetic, and can be by individual element or a plurality of elementary composition.Zone 10,20,30 with 40 mutually and form and to be described in more specifically in the EDS spectrogram of Fig. 2-5, and be described below.In addition, Co-Cr-Pt-TiO 2The exemplary atomic weight percentage value in each zone of exemplary composite material (spectrum 1-spectrum 4) is shown in the following table 1:
Table 1: exemplary Co-Cr-Pt-TiO 2Atoms of elements amount per-cent
Spectrum O Cr Co Pt
Spectrum 1 -- -- -- 100.00
Spectrum 2 -- 25.21 74.79 --
Spectrum 3 -- -- 100.00 --
Spectrum 4 -- -- 10.76 89.24
[0037] Fig. 2 is according to various illustrative embodiments of the present invention, shows microstructural energy dispersion X-ray spectral analysis (EDS) figure in spectrum 1 zone (i.e. zone 10) of Fig. 1.Peak 12,14,16 and 18 shows, at exemplary Co-Cr-Pt-TiO 2In the element of matrix material, the Pt element of this matrix material has been placed in spectrum 1 zone (for example zone 10 of Fig. 1).Table 1 shows that also the Pt of 100 atomic weight percentages is selected, is placed in the zone 10.Therefore, Co-Cr-Pt-TiO 2The non magnetic Pt of matrix material is present in the zone 10 of Fig. 1 mutually.
[0038] turn to Fig. 3, peak 22,24,25,26,27 and 28 is depicted among the EDS figure, is presented at exemplary Co-Cr-Pt-TiO 2In the spectrum 2 of matrix material (being the zone 20 of Fig. 1), Co is selected mutually with Cr and be placed in the microstructure.Cr is represented at peak 22,25 and 26, and the Co that peak 24,27 and 28 is represented in the microstructure.Shown in top table 1, exemplary spectrum 2 has been selected as having the Cr content of about 25.21 atomic percentages and the Co content of about 74.79 atomic percentages.Therefore, given their composition, Co-Cr-Pt-TiO 2The Co of particulate composite is in non magnetic phase mutually with Cr.In addition, Fig. 3 illustrates the microstructural specific region of Fig. 1 (for example zone 20) (for example can have special characteristic, the percentile Co of specific atoms is in mutually non magnetic with the Cr element), these special characteristics can coexist in whole microstructures that Fig. 1 described.
[0039] Fig. 4 is EDS figure, shows that Co has been placed in the microstructure that the spectrum 3 of Fig. 1 (zone 30) locates mutually.Peak 32,34 and 36 illustrates exemplary Co-Cr-Pt-TiO 2Co phase in the particulate composite.As institute's diagram in Fig. 4, and in the above shown in the table 1, magnetic Co is selected mutually, being about 100 atomic percentages in spectrum 3.In this zone, there is not other phase.Therefore in the zone 30 that Fig. 1 described, Co is Co-Cr-Pt-TiO mutually 2The whole microstructural magnetic phase part of particulate composite, and with microstructural different zones in other mutually and deposit.
[0040] Fig. 5 is EDS figure, shows and selects to be used for exemplary Co-Cr-Pt-TiO 2Fig. 1 of particulate composite composes 4 (zone 40) microstructural Co of locating and Pt mutually, wherein peak 41,42,43,44,45,46 and 47 represents Co and Pt mutually.More specifically, Co are indicated mutually with 45 in peak 41,44, and Pt are indicated mutually with 47 in peak 42,43,46.As shown in the table 1, select atomic percentage to be about 10.76 Co, and selected atomic percentage to be about 89.24 Pt, be used for this zone.Therefore, being present in microstructural Co in should the zone is non magnetic with Pt mutually.Therefore, Fig. 5 has illustrated that the microstructural specific region (for example zone 40) of Fig. 1 can have specific feature selection, and this feature can coexist as in whole microstructures that Fig. 1 describes.
[0041] Fig. 6 A and 6B illustrate exemplary Co-Cr-Pt-TiO 2Particulate composite, this matrix material are according to various illustrative embodiments of the present invention, use identical processing parameter to process.More specifically, Fig. 6 A illustrates and is selected as having thick Pt particulate Co-Cr-Pt-TiO 2The SEM image of particulate composite 100.Coarse particles can be the particle that is of a size of more than 1 micron.For example, coarse particles can be preferably more than or equal 10 μ m dimensionally, more than or equal to 20 μ m, perhaps can be 50-60 μ m, 60-70 μ m or 70-80 μ m dimensionally.By this specific selection, exemplary powders material 100 has about 81% PTF.Zone 110, it is slight shade or white in the SEM of Fig. 6 A image, has described Pt particulate exemplary area.Zone 120, it is compared with zone 110, is black dull shade in the SEM image, has described Co or Cr particulate exemplary area, perhaps Co and Cr particle bonded exemplary area.Zone 130, it is in a ratio of black dull shade with zone 120, has described TiO 2The particulate exemplary area.
[0042] Fig. 6 B illustrates the Co-Cr-Pt-TiO of at least a illustrative embodiments according to the present invention 2The SEM image of particulate composite 200, this matrix material has 68% PTF.Zone 210, it is slight shade or white in the SEM of Fig. 6 B image, has described Pt particulate exemplary area.Zone 220, it is compared in the SEM image with zone 210 is black dull shade, has described Co or Cr particulate exemplary area, perhaps Co and Cr particle bonded exemplary area.Zone 230, it is in a ratio of black dull shade with zone 220, has described TiO 2The particulate exemplary area.
[0043] starting material that are illustrated in the exemplary composite material among Fig. 6 A and the 6B are Co powder, Co-Cr powdered alloy, Pt powder and TiO 2In this first embodiment, these starting material of matrix material are processed in an identical manner, comprise consolidation technique.Yet the initial particle size of Pt is variable.In Fig. 6 A diagrammatic illustrative embodiments, thick Pt particle is used in the particulate composite 100.The size that coarse particles has can be more than 1 micron, and preferably can be in 20 μ m to 100 mu m ranges.Fig. 7 illustrates the Pt powder size and distributes.Fig. 7 has explained in detail and has compared with the Pt of particulate composite 200, granularity of the increase of the Pt of particulate composite 100 (in micron) and volume fraction (percent value).As shown in FIG. 7, volume fraction between the 10-20%, size is that the thick Pt particle (for example referring to Fig. 7 material 100) of 50 to 70 μ m has produced the thin microstructure of Pt particle when (for example volume fraction is less than or equal to below 10%, the 20 μ m) that is different from as showing in material 200.
[0044] for example, exemplary area 110 or in Fig. 6 A, have other zone similarity of Pt particulate, more much bigger than the size of the exemplary area 210 of Fig. 6 B dimensionally.Therefore, thick Pt particle (for example Pt particle in zone 110) is limited with the mutual diffusion mutually that contains between the Co particle (for example regional 120 contain Co particle).Therefore, bigger, pure Pt zone (for example zone 110 of Fig. 6 A) can be kept, this be realize suitable magnetic field passage and increase PTF institute preferred.For example, as as shown in Fig. 6 B, the Pt particle has the diffusion that increases with Co and Cr particle, thereby minimizes the suitable passage in magnetic field and reduced overall PTF that (for example the PTF of Fig. 6 B is 68%, and the PTF among Fig. 6 A is 81%, wherein has less diffusion between Pt particle and Co and Cr particle).
[0045] Fig. 8 A and 8B are respectively energy dispersion X-ray spectral analysis (EDS) spectrograms of the particulate composite of Fig. 6 A and 6B.More specifically, Fig. 8 A illustrates the EDS spectrogram of the particulate composite 100 of Fig. 6 A, and Fig. 8 B illustrates the EDS spectrogram of the particulate composite 200 of Fig. 6 B, according to various illustrative embodiments of the present invention.As above mention, the different grain size between material 100 and material 200 and arrange mutually relatively select to have produced different PTF values.Compare with the zone 250 of Fig. 8 B, the zone 150 in the EDS spectrogram of Fig. 8 A is presented at Co content lower in the Pt particle powder matrix material 100, and therefore Co particle and the diffusion between the Pt particle in particulate composite 100 is less.In addition, by use thick Pt particle in particulate composite 100, for example, Pt is minimized with mutual diffusion mutually between the Co particle, and bigger pure Pt zone (for example zone 110 of Fig. 6 A) can be kept.The Pt particle has been facilitated suitable magnetic field passage and has been increased PTF with the minimized mutual diffusion mutually of Co and/or Cr.
[0046] Fig. 9 A and 9B have described the various illustrative embodiments according to the present invention, by the Cr-Co-Pt-SiO of hot isostatic pressing (HIP) processing 2The SEM image of particulate composite.More specifically, Fig. 9 A illustrates Cr-Co-Pt-SiO 2The SEM image of particulate composite 300, this matrix material be with 927 ℃ hot isostatic pressing (HIP) Temperature Treatment, to reach 68% PTF.In Fig. 9 A, zone 310, it is slight shade or white in the SEM of Fig. 9 A image, has described the Pt particle.Zone 320, it is compared with zone 310, is black dull shade in the SEM image, has described Co or Cr particle, perhaps Co and the combination of Cr particulate.Zone 330, it is in a ratio of black dull shade with zone 320, has described SiO 2Particle.
[0047] Fig. 9 B is Cr-Co-Pt-SiO 2The SEM image of particulate composite 400, this matrix material be with 1300 ℃ hot isostatic pressing (HIP) Temperature Treatment, to reach 54% PTF.Pt particle in Fig. 9 B and they do not have difference in Fig. 9 A (for example, as in zone 310).In Fig. 9 B, Pt particle and Co and Cr particle spread in zone 420.Zone 430 among Fig. 9 B is in a ratio of black dull shade with zone 420, has described SiO 2Particle.
[0048] is illustrated in Fig. 9 A and forms by identical starting material with 400, as Co powder, Co-Cr powdered alloy, Pt powder and SiO with the particulate composite 300 among the 9B 2In addition, particulate composite 300 and 400 processed under similar condition, only be about the HIP temperature difference utilized (that is, and the particulate composite 300 of Fig. 9 A be 927 ℃, and the particulate composite 400 of Fig. 9 B is 1300 ℃).Because different HIP temperature, so the particulate composite 400 of Fig. 9 B demonstrates minimum contrast difference by the zone in the back scattering SEM image.Minimum difference shows that sample (Fig. 9 A is with shown in the 9B) has identical chemical constitution.In addition, diagrammatic particulate composite 300 has shown bright district (for example zone 310) among Fig. 9 A, wherein has a large amount of non magnetic Pt phases.Co-Cr alloy phase (for example zone 320 of Fig. 9 A) does not show basic diffusion.Comparatively speaking, Fig. 9 B illustrates the Pt particle and diffuse into (promptly zone as 310 is sightless) in the Co-Cr alloy phase in the material 400 of Fig. 9 B.Therefore, kept (promptly minimizing the diffusion of Co-Cr alloy phase and Pt particulate) if increase the Co-Cr alloy phase of PTF, then suitable magnetic field passage can be kept, and therefore the PTF that increases is provided.Co-Cr alloy phase and basic Pt mutually make the particulate composite 300 of Fig. 9 A have the PTF of increase in conjunction with effect.
[0049] Figure 10 A and 10B are the Co-Cr-Pt-TiO according to various illustrative embodiments of the present invention 2The SEM image of matrix material.The composition 500 of Figure 10 A and the composition 600 of Figure 10 B all are by Co-Cr-Pt-TiO 2Form.The starting material of the composition 500 of exemplary diagram 10A are Co powder, Co-Cr powdered alloy, Pt powder and TiO 2, and the starting material of composition 600 are Co powder, Cr powder, Pt powder and TiO 2Therefore, the difference between exemplary composition 500 and the exemplary composition 600 is to have the Co-Cr powdered alloy in composition 500.
[0050] composition 500 can have zone 510, and it is slight shade or white in the SEM of Figure 10 A image, has described the Pt particle.Zone 520, it is compared in the SEM image with zone 310 is black dull shade, has described Co or Cr particle, perhaps Co and the combination of Cr particulate.Zone 530, it is in a ratio of black dull shade with zone 520, has described TiO 2Particle.The composition 600 of Figure 10 B can have zone 610, and it illustrates the Pt particle.Co or Cr particle have been described, perhaps Co and the combination of Cr particulate in zone 620.Zone 630, it is in a ratio of black dull shade with zone 620, has described TiO 2Particle.
[0051] composition 500 of Figure 10 A is made up of the Co-Cr powdered alloy, and the composition 600 of Figure 10 B is made up of Elements C o powder and element Cr.When the Cr content in the Co alloy surpassed 20 atomic percentages, as institute's diagram in Figure 11, PTF increased greatly.For example, the composition 500 of Figure 10 A has 64% PTF, and the composition 600 of Figure 10 B has 52% PTF.Therefore, incorporate the selection of the Co-Cr alloy phase in other composition of composition 500 or sputtering target and total PTF that use has increased target into.By comparison, if Elements C o powder by cumulative to Co-Cr-Pt-TiO 2In the composition, the PTF of sputtering target will reduce usually.
[0052] in the above-described embodiments, by distribute with control Co base target in non magnetic (for example Pt) or increase PTF (for example Co-Cr alloy phase) mutually, therefore Be Controlled or increase as required of PTF.For the ease of control or increase PTF, can carry out tactic to the starting material of matrix material and select, reaching desired effects, and processing condition can Be Controlled, " increases phase (boosting phases) " to keep the PTF in the microstructure.Therefore, microstructure can be the mixture with chemically distinguishing different zones of forming.For example, chemically distinguishing composition can have 10 atomic percentages or above difference by the zone on magnetic element (for example, Co, Fe etc.).In addition, area size can be more than 1 micron.
[0053] at least one above-mentioned various embodiment, hot isostatic pressing (HIP) method and temperature are described and are used for forming in conjunction with element microstructure.Yet common sintering, discharge plasma sintering (SPS), vacuum hotpressing or other can promote the suitable working method of these working methods and temperature can be used in conjunction with starting material (for example Co powder, Cr powder, Co-Cr powdered alloy, Pt powder, SiO 2, TiO 2Deng) and form composition (as Co-Cr-Pt-TiO 2, Co-Cr-Pt-SiO 2Deng).
[0054] the described detailed description of this paper aft section is intended to the description as the various embodiments of the present invention in conjunction with the accompanying drawings, is not to be intended to represent that the present invention can be put into practice that embodiment is only arranged.Detailed description comprises detail, and purpose provides complete understanding of the present invention.Yet to those skilled in the art clearly, the present invention can be put into practice under the situation of these details not having.In some cases, structure of knowing and component are shown with the structure iron form, to avoid making concept obfuscation of the present invention.
[0055] should be appreciated that the concrete order of the step in disclosed method or the example that level is illustrative methods.Based on design preferences, should be appreciated that the concrete order of step in the method or level can rearrange, remain in the scope of the present disclosure simultaneously.Appended claim to a method has presented the composition of various steps in the order for example, and does not mean that and be subject to concrete order or the level that is presented.
[0056] provides the description of front, so that make any technician in this area can put into practice various embodiment as herein described.To be easy to obviously to the modification of these embodiments to those skilled in the art, and go for other embodiment in this defined common principle.Therefore, claims also are not intended to be subject to these embodiments shown in this article, but will be not to be intended to refer to " one and only one " to mentioning of odd number key element wherein according to the four corner consistent with literal claims, unless otherwise prescribed, be meant " one or more ".All 26S Proteasome Structure and Function Equivalents of the key element of the described various embodiments of specification sheets clearly are incorporated herein by reference and are intended at this and be the present invention includes in the whole text, and these Equivalents are well known by persons skilled in the art or were well known by persons skilled in the art afterwards.In addition, any content disclosed herein is not to be intended to contribute to the public, no matter and this type of open whether clearly being set out in claims.There is not the claim key element at 35U.S.C. § 112, explained under the 6th section the regulation, unless this key element with phrase " (be used for ... instrument (meansfor)) " clearly state, perhaps under the situation of claim to a method, this element with phrase " (be used for ... step (step for)) " state.

Claims (4)

1. a control contains the method for the leakage magnetic flux in the sputtering target of magnetic element and nonmagnetic elements, comprising:
Select the granularity of at least a non magnetic phase in microstructure, the described granularity of wherein said non magnetic phase is more than or equal to 1 micron; With
In described microstructure in conjunction with described at least a non magnetic phase and at least a magnetic mutually, wherein said at least a magnetic is more than or equal to 10 atomic percentages, described at least a magnetic in wherein said microstructure size mutually is more than 1 micron, and the described selection granularity of wherein said at least a non magnetic phase reduces at least a magnetic described in the described microstructure and described at least a non magnetic diffusion between mutually.
2. the described method of claim 1, the described granularity of wherein said non magnetic phase is selected as more than or equal to 10 microns.
3. the described method of claim 1, the described granularity of wherein said at least a non magnetic phase is selected, so that increase the passing flux (PTF) of described sputtering target by reducing at least a magnetic described in the described microstructure and described at least a non magnetic diffusion between mutually.
4. the described method of claim 1, wherein said at least a magnetic mutually and the described at least a non magnetic hot isostatic pressing that communicated, sintering, discharge plasma sintering or vacuum hotpressing be bonded in the described microstructure.
CNA2007101085613A 2007-02-22 2007-06-05 Control of magnetic leakage flux in sputter targets containing both magnetic and non-magnetic elements Pending CN101250686A (en)

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