CN101246285A - Method for producing light sensitive spacer - Google Patents
Method for producing light sensitive spacer Download PDFInfo
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- CN101246285A CN101246285A CNA2007100798011A CN200710079801A CN101246285A CN 101246285 A CN101246285 A CN 101246285A CN A2007100798011 A CNA2007100798011 A CN A2007100798011A CN 200710079801 A CN200710079801 A CN 200710079801A CN 101246285 A CN101246285 A CN 101246285A
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Abstract
The invention discloses a method for preparing sensitizing interstice. The method comprises black matrix'' cardinal plate with a plurality of interstices and colourful layer open pores is formed on the transparent carrier, colorful filter layer is formed on the black matrix'' cardinal plate, and then transparent conducting layer is formed on the black matrix'' cardinal plate and the colorful filter layer in photolithograpic technology. Then sensitizing spacing material is coated on the transparent conducting layer, back exposal cross linkage working procedure using black matrix'' as mask directly is processed, ultraviolet ray is irradiated from lower of the transparent carrier, graph is defined permeation black matrix'' interstice open to cross link sensitizing spacing material, at last the interstice layer is formed through the steps of developing and roasting.
Description
Technical field
The present invention relates to a kind of method of making the light sensitive spacer of flat-panel screens, and particularly relate to a kind of method of making the ultrahigh resolution light sensitive spacer.
Background technology
Colored filter (color filter) is the colorize key component of LCD, by the processing of colored filter, the high light of LCD backlight module emission can be presented colored picture.The making of colored filter is to make black matrix" to form at interval on glass substrate, Red Green Blue is arranged in regular turn among each pixel of colorize layer again.Black matrix" and colorize layer utilize photosensitive material to make with the gold-tinted photoetching process.
Gap (Spacer) major function is to keep the LCD distance of two sheet glass substrates up and down, forms a space with filling liquid crystal.Present gap is main comparatively general with the bar-shaped or spherical particle of silica class, plastics class, category of glass, is filled in LCD up and down between the two sheet glass substrates in the mode of scattering.Yet the good general makes the correlative value of screen display change if gap scatters not, even influences the size of visual angle angle, and therefore along with the trend of substrate maximization, it is more and more important that the homogeneity of gap just seems.
Therefore, developed at present the gap subclass has been formed in production method on the substrate, utilize gold-tinted technology to form the projection of gap, except that increasing the light transmittance, reducing the generation of light leak, the also particle that can avoid gap caused by the glass substrate pressure defective of breaking.
And along with popularizing that display panels is used, for the also raising gradually of requirement of resolution.The resolution of liquid crystal display depends on the number of pixel, and the picture that pixel the more presents is also just careful, and the expressivity of color is also better.Yet high pixel means the region area that must increase color layer in the matrix, and therefore, be used for the black matrix" part of the range of definition and the live width of position light sensitive spacer part thereon also must dwindle thereupon.
Present TFT-LCD colored filter, its gold-tinted photoetching process is many, and aiming at exposure machine (proximity aligner) with inexpensive proximity carries out design transfer and exposure soon with speed of production, but proximity is aimed at exposure machine and is used the spacing that has 50～500 μ m between figure transfer mask and the photosensitive material, because of the x-ray diffraction influence is difficult to reach tiny live width, the requirement that the gap sub-volumes of producing can't be realistic.At present feasible method be with the equipment of high-order as can changing apart from depth of focus degree (depth of focus) exposure machine, or reach the purpose of tinyization, but all must increase fund expenditure by the material adjustment.
Summary of the invention
Therefore the present invention is providing a kind of method of making the flat-panel screens light sensitive spacer, and in order to improve the diffraction effect that the traditional fabrication method is subject to light, the particle diameter of light sensitive spacer can't reach the problem of tinyization requirement.
According to These characteristics of the present invention, a kind of method of making light sensitive spacer is proposed, utilize the mode of back-exposure, eliminate the diffraction effect that light arrives photosensitive material, reach the careful littleization purpose in gap.
At first, utilize the gold-tinted photoetching process, on transparency carrier, form black matrix", form a black matrix substrate with the sub-perforate in a plurality of gaps and a plurality of color layer perforates.Then, utilize color sensitive material again, on this black matrix substrate, form the chromatic filter layer of red, green, blue respectively, and on black matrix substrate and chromatic filter layer, plate the layer of transparent conductive material, form a transparency conducting layer.On transparency conducting layer, apply the sensitization interval insulant at last, and directly carry out the crosslinked operation of back-exposure as mask with black matrix", from transparency carrier below irradiation ultraviolet radiation, seeing through black matrix" makes the sensitization interval insulant crosslinked, again via forming the sublayer, gap behind development and the baking procedure, the upper and lower end that can dwindle gap, is poor, to produce the sublayer, gap of tinyization of particle diameter.
In order to make constitutive characteristic of the present invention, method of operating, purpose and advantage be more prone to understand, so, embodiments of the invention are described in hereinafter reaching character narrate in conjunction with the accompanying drawings.
Description of drawings
For above and other objects of the present invention, feature, advantage and embodiment can be become apparent, detailed description of the accompanying drawings is as follows:
Fig. 1 shows the flow chart of steps according to the making light sensitive spacer of one embodiment of the invention;
Fig. 2 shows the step synoptic diagram according to the making black matrix substrate of one embodiment of the invention;
Fig. 3 shows the black matrix substrate vertical view of making according to method of the present invention;
Fig. 4 shows the step synoptic diagram according to the making chromatic filter layer of the embodiment of the invention;
Fig. 5 shows the vertical view of the black matrix substrate of making according to method of the present invention with chromatic filter layer;
Fig. 6 shows the step synoptic diagram according to the sublayer, making gap of the embodiment of the invention;
Fig. 7 shows the flow chart of steps according to the making light sensitive spacer of another embodiment of the present invention;
Fig. 8 shows the step synoptic diagram according to the making black matrix substrate of another embodiment of the present invention;
Fig. 9 A～Fig. 9 B is the comparison synoptic diagram of back-exposure method of the present invention and traditional face exposure method.
Wherein, Reference numeral:
110: step
112: step
114: step
116: step
118: step
210: transparency carrier
221: black matrix"
223: the sub-perforate in gap
240: light source
410: the first color sensitive materials
412: the second chromatic filter layers
421: the first masks
423: the three masks
600: the transparent photomask glue-line
711: step
713: step
715: step
717: step
719: step
821: the ferrous metal film
823: the patterning photoresist layer
830: mask
850: the color layer perforate
911: black matrix"
921: the transparent photomask glue-line
931: transparency carrier
941: light source 111: step
113: step
115: step
117: step
119: step
220: the black photoresist layer
222: the color layer perforate
230: mask
400: black matrix substrate
411: the first chromatic filter layers
413: the three chromatic filter layers
422: the second masks
430: transparency conducting layer
610: the sub-post in gap
712: step
714: step
716: step
718: step
810: transparency carrier
822: positive photoresist layer
824: ferrous metal film matrix
840: light source
910: mask
920: the transparent photomask glue-line
930: substrate
940: light source
Embodiment
Please refer to Fig. 1, it shows the flow chart of steps according to the making light sensitive spacer of one embodiment of the invention, and with reference to Fig. 2, is the step synoptic diagram of the making black matrix substrate of one embodiment of the invention.
At first,, sensitization black light screening material is coated on the transparency carrier 210, obtains the uniform black photoresist layer 220 of thickness as step 110 and shown in Figure 2.According to embodiments of the invention, the method that sensitization black shading material can be suitable, for example whirl coating evenly is coated on the transparency carrier 210.Transparency carrier 210 can be glass substrate, and sensitization black light screening material can be the solvable black photoetching of alkali glue material, is negative photoresist material, and light screening material can be carbon black particle or metal particle in the photoresist, as titanium dioxide.
Then, as step 111 and shown in Figure 2, provide a mask 230 to make black matrix".Wherein, have the sub-open region in a plurality of gaps and a plurality of color layer open region on the mask 230, the shape of the sub-open region in gap can be arbitrary shape, as polygon, circle, ellipse etc.One light source 240 sees through mask 230 ultraviolet ray is shone on black photoresist layer 220, carries out exposure crosslinked (cross-link) processing procedure, shines ultraviolet black photoresist layer 220 parts and can form cross-linked structure.
Shown in the step 112, crosslinked black photoresist layer 220 is developed for another example, on transparency carrier 210, define the pattern of mask 230 with a little alkaline developer.Because photoresist is through after shining, changed original chemical property, made irradiated region and the rate of dissolution of non-irradiated region in developer solution unequal, developer solution can be with easily molten zone dissolving, the uncrosslinked part of black photoresist layer 220 then can be removed from transparency carrier 210, reaches the purpose of development.
Afterwards, dry by the fire (hard bake) more firmly, remove remaining moisture or solvent, and increase its adhesion and flatness.Shown in step 113, can form the black matrix" 221 of a patterning after the hard baking, be attached on the transparency carrier 210, form a black matrix substrate.
Please refer to Fig. 3, be the vertical view of black matrix".Have the sub-perforate 223 in a plurality of color layer perforates 222 and a plurality of gap on the black matrix" 221, wherein, the shape of the sub-perforate 223 in gap can be arbitrary shape, as polygon, circle, ellipse etc.
Then, shown in step 114, on black matrix substrate, form chromatic filter layer.And, show step synoptic diagram according to the making chromatic filter layer of the embodiment of the invention with reference to Fig. 4.At first, coating first color sensitive material 410 on black matrix substrate 400 utilizes light source 240 to produce ultraviolet ray, sees through first mask 421 and shines on first color sensitive material 410.Have a plurality of first color layer open regions on first mask 421, light can be by the first color layer open region crosslinked operation of exposing.
The first crosslinked color sensitive material 410 develops subsequently and dries by the fire step firmly, forms one first chromatic filter layer 411.Afterwards equally with above-mentioned steps, utilize second mask 422 and the 3rd mask 423 with second color sensitive material and the 3rd color sensitive material exposes crosslinked and operation such as development in regular turn, second mask 422 and the 3rd mask 423 have a plurality of second color layer open regions and the 3rd color layer open region respectively, can form second chromatic filter layer 412 and the 3rd chromatic filter layer 413, promptly produce the chromatic filter layer that one deck has RGB three looks after above-mentioned steps is finished in regular turn.Wherein, first color sensitive material, second color sensitive material and the 3rd color sensitive material are all negative photoresist material, and the position of the color layer open region of above-mentioned three kinds of different masks does not overlap mutually.
Then, continue, shown in step 115, on black matrix substrate 400 and chromatic filter layer, form a transparency conducting layer 430 with reference to Fig. 1 and Fig. 4.Wherein, transparency conducting layer 430 forms with sputtering method or vapour deposition method, its thickness can between 1400 dusts～1600 dusts (
) between.The transparent conductive material that forms transparency conducting layer 430 can comprise tin indium oxide (In
2O
3/ SnO
2), tin ash (SnO
2), indium sesquioxide (In
2O
3) or zinc paste (ZnO).
Please refer to Fig. 5, be the vertical view of black matrix substrate with chromatic filter layer.Can have a plurality of first chromatic filter layers 411, second chromatic filter layer 412 and the 3rd chromatic filter layer 413 on the black matrix substrate 400, and the sub-perforate 223 in a plurality of gaps, wherein, the shape of the sub-perforate 223 in gap can be arbitrary shape, as polygon, circle, ellipse etc.
Next as step 116 and shown in Figure 6, Fig. 6 is the synoptic diagram of sublayer, gap formation.At first, the sensitization partition material is coated on the transparency conducting layer 430, obtains the uniform transparent photomask glue-line 600 of thickness, the material of transparent photomask glue-line 600 can be transparent feel optical activity resin.
Then, with the pattern of black matrix substrate 400 mask as transparent photomask glue-line 600, the irradiation of light source 240 self-induced transparency substrate backs, see through the pattern of black matrix" 400, ultraviolet ray is shone on transparent photomask glue-line 600, and it is crosslinked to expose, and shines ultraviolet transparent photomask glue-line 600 parts and can form cross-linked structure, develop again afterwards and dry by the fire step firmly, form the sub-post 610 in gap.Wherein, the particle size of the sub-post 610 in gap can by the black matrix substrate perforate 223 in 400 defined gaps determine that the height of gap can be between 0.1～10 μ m.According to one embodiment of the invention, the height of gap can be between 2.5～5 μ m, and the scope of its difference of upper and lower end is between 0.1～20 μ m.
Please refer to Fig. 7, it shows the flow chart of steps according to the making light sensitive spacer of another embodiment of the present invention, and with reference to Fig. 8, is the step synoptic diagram of the making black matrix substrate of another embodiment of the present invention.
At first, as step 711 and shown in Figure 8, ferrous metal film 821 is plated on the transparency carrier 810, according to embodiments of the invention, transparency carrier 810 can be a glass substrate, the method that the ferrous metal film can be suitable, and for example vapour deposition method or sputtering method evenly are plated on the transparency carrier 810.The ferrous metal film can be chromium film, nickel film etc.Shown in the step 715, apply a positive type light sensitive material on ferrous metal film 821 for another example, obtain the uniform positive photoresist layer 822 of thickness.
Then, as step 713 and shown in Figure 2, provide a mask 830 to make black matrix".Wherein, have the sub-open region in a plurality of gaps and a plurality of color layer open region on the mask 830, the shape of the sub-open region in gap can be arbitrary shape, as polygon, circle, ellipse etc.One light source 840 sees through mask 830 ultraviolet ray is shone on positive photoresist layer 822, carries out exposure scission of link (Chain scission) operation.
Shown in the step 714, positive photoresist layer 822 is developed for another example, on transparency carrier 810, define the pattern of mask 830 with a developer solution.Because photoresist is through after shining, changed original chemical property, make irradiated region and the rate of dissolution of non-irradiated region in developer solution unequal, developer solution can be with easily molten zone dissolving, but the exposed portion of positive photoresist layer 822 is then removed on the self-induced transparency substrate 210, reach the purpose of development, and form patterning photoresist layer 823.
Shown in step 715, carry out roasting procedure and remove remaining moisture or solvent, and increase its adhesion and flatness.Patterning photoresist layer 823 after the baking is attached on the transparency carrier 810, finishes a matrix figure on the ferrous metal film.
Then, shown in step 716, be etch stop layer with patterning photoresist layer 823, etching ferrous metal film 821 forms the ferrous metal film matrix 824 with the sub-perforate 850 in gap.
Shown in step 717, remove the patterning photoresist layer 823 of ferrous metal film matrix 824 tops, shown in the step 718, form black matrix substrate for another example with the sub-perforate in gap and color layer opening.
Afterwards, shown in step 719, utilize Fig. 1 and method shown in Figure 4, form chromatic filter layer, and form the sub-post in gap with the back-exposure method.Please refer to Fig. 9 A～Fig. 9 B, be the comparison synoptic diagram of back-exposure method of the present invention and face exposure method.
Fig. 9 A is the face exposure method, transparent photomask glue-line 920 is attached on the substrate 930, utilize the mode of face exposure, with proximity aim at exposure machine with the design transfer on the mask 910 to transparent photomask glue-line 920, for avoiding mask to stain, the spacing (is example with 100 μ m at this) of 50～500 μ m must be arranged between mask 910 and the transparent photomask glue-line 920.Yet, the light of light source 940 arrives the diffraction effect of photosensitive material, the photoresist enlarged areas (shown in dotted arrow) that can feasible be exposed, gap of Xing Chenging can't be near desirable rectangle column at last, and present trapezoidal shape, its area of going to the bottom causes the particle diameter of gap to become big much larger than upper base, does not meet the requirement of tinyization.
Refer again to Fig. 9 B, be back-exposure method of the present invention, utilize above-mentioned step shown in Figure 1 that black matrix" 911 is fixed on the transparency carrier 931 earlier, form black matrix substrate, again transparent photomask glue-line 921 is coated on the black matrix substrate, utilizes light source 941, utilize the back-exposure mode, as mask, undertaken crosslinked by transparency carrier 931 back side directive transparent photomask glue-lines 921 light with these black matrix" 911 defined patterns.Because black matrix" 911 is fixed on the transparency carrier 931 in advance, not only can reduce the use of a slice mask, more shorten the distance between the light arrival transparent photomask glue-line 921, effectively eliminate the diffraction effect of light, the photoresist top section is exposed scope only increases (shown in dotted arrow) slightly than bottom.Moreover, because development effect can make upper base slightly dwindle, therefore last gap that forms it go to the bottom minimum with the gap of upper base, can be near desirable rectangle column, the particle diameter of gap can be controlled in the required scope, reach the requirement of tinyization, and then increase the quantity of the total area of chromatic filter layer and contained R, G, B filter area, improve the resolution and the color representation ability of liquid crystal panel.
By the invention described above preferred embodiment as can be known, use the present invention and have following advantage:
At first, use method of the present invention and can produce high-resolution gap.The present invention is to be pre-formed black matrix" on transparency carrier as the mask of making gap, via the mode of back-exposure that the photosensitive material of gap is crosslinked again, remove the precision that can improve exposure aligning, shorten the distance between the light arrival photosensitive material, effectively eliminate the diffraction effect of light, outside gap of formation near the desirable particle size size, also can reduce the use of mask.
In addition, compared to scanning equipment, the cost of using the inventive method is also cheaper, and material do not need special design, can be connected with existing technology.
Therefore, use method of the present invention and make gap, applicable to making high-order high resolution A V display, high resolving power hand phone display screen, thin film transistor (TFT) (TFT) LCD, low temperature polycrystalline silicon (LTPS) LCD, surpassing and reverse devices such as LCD, organic electroluminescent LED (OLED) and plasma planar display, can provide higher resolution of product and color representation ability.
Though the present invention is described with the foregoing description; but it is not in order to limit the present invention; anyly know those of ordinary skill in the art; without departing from the spirit and scope of the present invention; can carry out various improvement and variation to the present invention, so protection scope of the present invention is limited by the accompanying Claim book.
Claims (20)
1. a method of making light sensitive spacer is characterized in that, this method comprises:
One transparency carrier is provided;
One mask is provided,, has the sub-open region in a plurality of gaps and a plurality of color layer open region on this mask in order to make black matrix";
Use this mask to form a black matrix substrate, have the sub-perforate in a plurality of gaps and a plurality of color layer perforate;
On this black matrix substrate, form a chromatic filter layer;
On this black matrix substrate and this chromatic filter layer, form a transparency conducting layer;
Coating one sensitization interval insulant on this transparency conducting layer;
With this black matrix substrate is mask, sees through this transparency carrier and makes this sensitization interval insulant of ultraviolet ray irradiation, carries out the crosslinked processing procedure of a back-exposure;
This crosslinked sensitization interval insulant develops; And
Toast the sensitization interval insulant of this development, to form sublayer, a gap.
2. the method for making light sensitive spacer according to claim 1 is characterized in that, this transparency carrier is a glass substrate.
3. the method for making light sensitive spacer according to claim 1 is characterized in that, the step of this formation black matrix substrate comprises at least:
Apply a sensitization black light screening material on this transparency carrier;
See through this mask irradiation ultraviolet radiation on this sensitization black light screening material, carry out the crosslinked operation of an exposure;
This crosslinked sensitization black light screening material develops; And
Toast the sensitization black light screening material of this development, to form a black matrix substrate.
4. the method for making light sensitive spacer according to claim 3 is characterized in that, this sensitization black light screening material is the solvable black photoresist of an alkali material.
5. the method for making light sensitive spacer according to claim 4 is characterized in that, the solvable black photoresist of this alkali material comprises carbon black particle or metal particle.
6. the method for making light sensitive spacer according to claim 5 is characterized in that, this metal particle comprises titanium dioxide.
7. the method for making light sensitive spacer according to claim 3 is characterized in that, this crosslinked black photoetching glue material utilizes little alkaline developer to develop.
8. the method for making light sensitive spacer according to claim 1 is characterized in that, the step of this formation black matrix substrate comprises at least:
Plate a ferrous metal film on this transparency carrier;
Apply a positive type light sensitive material on this ferrous metal film;
Make ultraviolet ray see through this mask and be radiated on this positive type light sensitive material, carry out an exposure scission of link operation;
This positive type light sensitive material that develops forms a patterning photoresist;
Toast this patterning photoresist;
Use this patterning photoresist to be shielding, this ferrous metal film of etching; And
Remove this patterning photoresist, to form a black matrix substrate.
9. the method for making light sensitive spacer according to claim 8 is characterized in that, the method for this black coating non-ferrous metal film comprises vapour deposition method or sputtering method.
10. the method for making light sensitive spacer according to claim 8 is characterized in that, this ferrous metal film comprises chromium film or nickel film.
11. the method for making light sensitive spacer according to claim 1 is characterized in that, the shape of this sub-open region in gap comprises polygon, circle or oval.
12. the method for making light sensitive spacer according to claim 1 is characterized in that, the step of this formation chromatic filter layer comprises at least:
Apply one first color sensitive material on this black matrix substrate;
Make ultraviolet ray see through one first mask and be radiated on this first color sensitive material, carry out the crosslinked operation of an exposure, have a plurality of first color layer open regions on this first mask;
This first crosslinked color sensitive material develops;
Toast first color sensitive material of this development, to form one first chromatic filter layer;
Apply one second color sensitive material on this black matrix substrate;
See through one second mask irradiation ultraviolet radiation on this second color sensitive material, carry out the crosslinked operation of an exposure;
This second crosslinked color sensitive material develops;
Toast second color sensitive material of this development, to form one second chromatic filter layer;
Apply one the 3rd color sensitive material on this black matrix substrate;
Make ultraviolet ray see through one the 3rd mask and be radiated on the 3rd color sensitive material, carry out the crosslinked operation of an exposure;
This 3rd crosslinked color sensitive material develops; And
Toast the 3rd color sensitive material of this development, to form one the 3rd chromatic filter layer.
13. the method for making light sensitive spacer according to claim 12 is characterized in that, has a plurality of second color layer open regions on this second mask, and the position of this second color layer open region and this first color layer open region do not overlap.
14. the method for making light sensitive spacer according to claim 12, it is characterized in that, have a plurality of the 3rd color layer open regions on the 3rd mask, the position of the 3rd color layer open region and this first color layer open region and this second color layer open region do not overlap.
15. the method for making light sensitive spacer according to claim 1 is characterized in that, the material of this transparency conducting layer is a transparent conductive material.
16. the method for making light sensitive spacer according to claim 15 is characterized in that, this transparent conductive material comprises tin indium oxide (In
2O
3/ SnO
2), tin ash (SnO
2), indium sesquioxide (In
2O
3) or zinc paste (ZnO).
17. the method for making light sensitive spacer according to claim 1 is characterized in that, the thickness of this transparency conducting layer is between 1400 dusts～1600 dusts.
18. the method for making light sensitive spacer according to claim 1 is characterized in that, this sensitization interval insulant is a transparent feel optical activity resin.
19. the method for making light sensitive spacer according to claim 1 is characterized in that, sublayer, the gap height of this formation is between 0.1 micron～10 microns, and sublayer, preferable gap height is 1.5～3.5 microns.
20. the method for making light sensitive spacer according to claim 1 is characterized in that, the poor scope of going to the bottom on the sublayer, gap of this formation is between 0.1 micron～20 microns.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA2007100798011A CN101246285A (en) | 2007-02-14 | 2007-02-14 | Method for producing light sensitive spacer |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA2007100798011A CN101246285A (en) | 2007-02-14 | 2007-02-14 | Method for producing light sensitive spacer |
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| CN101246285A true CN101246285A (en) | 2008-08-20 |
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ID=39946819
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| CN107851407A (en) * | 2015-07-09 | 2018-03-27 | 夏普株式会社 | The manufacture method of active-matrix substrate, display device and display device |
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