CN101241959A - LED device and its making method - Google Patents
LED device and its making method Download PDFInfo
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- CN101241959A CN101241959A CNA2007100054980A CN200710005498A CN101241959A CN 101241959 A CN101241959 A CN 101241959A CN A2007100054980 A CNA2007100054980 A CN A2007100054980A CN 200710005498 A CN200710005498 A CN 200710005498A CN 101241959 A CN101241959 A CN 101241959A
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Abstract
A light emitting diode device comprises a substrate and at least one light emitting diode component, wherein the substrate comprises a first surface and a second surface which are oppositely arranged, the first surface comprises a plurality of step-shaped projections, and the light emitting diode component is arranged at one side of the substrate.
Description
Technical field
The present invention is about a kind of electro photo-luminescent apparatus and manufacture method thereof, particularly about a kind of light-emitting diode assembly and manufacture method thereof.
Background technology
(Light Emitting Diode LED) is a kind of cold light light-emitting component to light-emitting diode, and it utilizes the energy that the electron hole combination is discharged in the semi-conducting material, disengages with the form of light.Difference according to materials used, it can send the monochromatic light of different wave length, and mainly can divide into two kinds of visible light emitting diode and invisible light (infrared ray) light-emitting diodes, because light-emitting diode is compared to the luminous form of conventional bulb, have advantages such as power saving, shatter-proof and flash speed are fast, therefore become critical elements indispensable in the daily life.
Please refer to Fig. 1, it is the schematic diagram of a kind of light-emitting diode assembly of routine.Conventional a kind of light-emitting diode assembly 1 comprises that at least one light-emitting diode 10 is pasted on the transparency carrier 11.Wherein, light-emitting diode 10 comprises first semiconductor layer 101, the luminescent layer 102 and second semiconductor layer 103, first semiconductor layer 101, the luminescent layer 102 and second semiconductor layer 103 are provided with in regular turn, first contact electrode 104 is linked to first semiconductor layer 101, second contact electrode 105 is linked to second semiconductor layer 103, with first semiconductor layer 101 is the p type semiconductor layer, and second semiconductor layer 103 is the example explanation for the n type semiconductor layer, when respectively to first semiconductor layer 101, second semiconductor layer 103 imposes voltage and when producing electric current, utilize the electron hole in p type semiconductor layer and the n type semiconductor layer to combine, and convert electrical energy into luminous energy.
Please refer to Fig. 2 A, it is the schematic diagram of light field of the light-emitting diode assembly of Fig. 1.Light-emitting diode assembly 1 also comprises encapsulation unit 12, general encapsulation unit 12 commonly used is lens, it is hemisphere, concentrated in order to the light that light-emitting diode 10 is launched, the direction that is light emission concentrates near the optical axis OS1, is only to be fit to for example application such as flashlight, desk lamp or traffic sign of illuminating equipment of low-angle and concentration of energy.Then, please refer to Fig. 2 B, it is the light-emitting diode assembly of Fig. 2 A and the schematic diagram of light guide plate, when above-mentioned light-emitting diode assembly 1 is applied to the side direction type backlight module of a display floater, needs light guide plate 6 to cooperate the uniformity that improves light usually.Yet, because going into to inject the light of light guide plate 6, side direction can increase and decay gradually along with the distance of distance light emitting source, therefore limited the light-emitting area of display floater.
For addressing the above problem, please refer to Fig. 3 A, it is the schematic diagram of the another kind of light-emitting diode assembly of routine.The another kind of mirror body 22 that is applied to light-emitting diode assembly 2 of known exposure, it is incorporated into substrate 21 with encapsulation LED element 20, the surface of mirror body 22 is adjacent to optical axis OS2 periphery to have a recess C and forms the face of dispersing, dispersed and away from optical axis OS2 in order to reflecting near near the light of concentrating the optical axis OS2, in order to do making light-emitting diode assembly 2 that even and large-scale light-emitting area is provided, and can directly apply in the backlight module, exempt the setting of light guide plate.Yet, shown in Fig. 3 B, because above-mentioned mirror body 22 is the circle symmetrical structure, be also to be round symmetric shape with light-emitting area A, when a plurality of light-emitting diode assemblies 2 are arranged and when using backlight as backlight module, will cause the light-emitting area A of adjacent light-emitting diode assembly 2 overlapped, and cause the uneven phenomenon of luminous intensity.
In view of this, how to provide a kind of light-emitting diode assembly and the manufacture method thereof that can adjust light field shape and distribution of light intensity distribution, real is one of important topic now.
Summary of the invention
Because above-mentioned problem, purpose of the present invention is for providing a kind of light-emitting diode assembly and the manufacture method thereof that can adjust light field shape and distribution of light intensity distribution.
Edge is for reaching above-mentioned purpose, to comprise substrate and at least one light-emitting diode according to a kind of light-emitting diode assembly of the present invention.Wherein, substrate has first surface and the second surface that is oppositely arranged, and first surface has a plurality of step-like projections, and light-emitting diode is arranged at a side of substrate.
For reaching above-mentioned purpose, the manufacture method of foundation a kind of light-emitting diode assembly of the present invention comprises the following steps: to provide a plate body; Form at least one light-emitting diode on plate body, light-emitting diode comprises first semiconductor layer, luminescent layer and second semiconductor layer in regular turn, and first semiconductor layer is formed on the plate body; One substrate is provided, have one the surface and its on have a plurality of step-like projections; Adhesive substrate is on light-emitting diode; And remove plate body.
For reaching above-mentioned purpose, comprise the following steps: to provide a plate body according to the manufacture method of another kind of light-emitting diode assembly of the present invention, have on a surface and its and have a plurality of step-like projections; And form at least one light-emitting diode on plate body, and light-emitting diode comprises first semiconductor layer, luminescent layer and second semiconductor layer in regular turn, first semiconductor layer is formed on the plate body.
From the above, because of forming a plurality of step-like projections in a side of substrate or plate body according to a kind of light-emitting diode assembly of the present invention and manufacture method thereof, these step-like projections are in order to adjust the light field phase place or the direction of light beam that light-emitting diode sends, reach the light field shape that changes light beam or adjust the function that distribution of light intensity distributes, and then the light-emitting area of a plurality of light-emitting diodes is not overlapped each other, and effectively improve the uneven phenomenon of prior art luminous intensity.Wherein these step-like projections can be formed on the light output surface of substrate or plate body, or are formed on the joint interface of substrate and light-emitting diode.In addition, utilize the structural design of these step-like projections also can reach correcting prior art light and concentrate near the phenomenon that is confined to the optical axis, and reach the purpose of homogenizing light-emitting area.
Description of drawings
Fig. 1 is the schematic diagram of a kind of light-emitting diode assembly of routine.
Fig. 2 A is the schematic diagram of light field of the light-emitting diode assembly of Fig. 1.
Fig. 2 B is the light-emitting diode assembly of Fig. 2 A and the schematic diagram of light guide plate.
Fig. 3 A is the schematic diagram of the another kind of light-emitting diode assembly of routine.
Fig. 3 B is the schematic diagram of light field shape of the light-emitting diode assembly of Fig. 3 A.
Fig. 4 A is the schematic diagram according to a kind of light-emitting diode assembly of the preferred embodiment of the present invention.
Fig. 4 B to Fig. 4 D is the generalized section of the various projections of broken circle part among Fig. 4 A.
Fig. 5 is the schematic diagram according to the another kind of light-emitting diode assembly of the preferred embodiment of the present invention.
Fig. 6 is the schematic diagram according to the light field shape of a kind of light-emitting diode assembly of the preferred embodiment of the present invention.
Fig. 7 is the flow chart according to a kind of light-emitting diode assembly of the preferred embodiment of the present invention.
Fig. 8 A and Fig. 8 B are the schematic flow sheet according to a kind of light-emitting diode assembly of the preferred embodiment of the present invention.
Fig. 9 is the flow chart according to the another kind of light-emitting diode assembly of the preferred embodiment of the present invention.
Figure 10 A and Figure 10 B are the schematic flow sheet according to the another kind of light-emitting diode assembly of the preferred embodiment of the present invention.
Description of reference numerals
1,2,3: light-emitting diode assembly
10,20,32: light-emitting diode
101,321: the first semiconductor layers
102,322: luminescent layer
103,323: the second semiconductor layers
104,341,341 ': first contact electrode
105,342,342 ': second contact electrode
11: transparency carrier
12: encapsulation unit
21,31: substrate
22: the mirror body
30: plate body
311: first surface
312: second surface
313: step-like projection
33: the printing opacity adhered layer
34: electrode pair
35: heat-radiating substrate
5: die
6: light guide plate
OS1: optical axis
OS2: optical axis
A, A ': light-emitting area
PR: photoresist layer
M: photomask
S1～S2, S1 '～S6 ': process step
Embodiment
Hereinafter with reference to relevant indicators, a kind of light-emitting diode assembly and manufacture method thereof according to the preferred embodiment of the present invention are described, wherein components identical will be illustrated with identical reference marks.
Please refer to Fig. 4 A, it is the schematic diagram according to a kind of light-emitting diode assembly of the preferred embodiment of the present invention.A kind of light-emitting diode assembly 3 according to the preferred embodiment of the present invention comprises substrate 31 and at least one light-emitting diode 32.
In the present embodiment, substrate 31 can be transparent substrates, and its material is selected from epoxy resin (Epoxy), optical glass (Optical glass), semiconductor and group that combination constituted thereof, and wherein semiconductor can be the semiconductor of III-V family, II-VI family or IV family.In addition, this substrate 31 also can be general general epitaxial substrate, and its material comprises carborundum or aluminium oxide, for example is alundum (Al (Al
2O
3) etc.
Yet, the present invention is not restricted to this, for example, these step-like projections 313 are except can be the binary optical projection with flat surfaces, also can be the projection with a curved surface, its section can be convex (shown in Fig. 4 B), concavity (shown in Fig. 4 C), wavy (shown in Fig. 4 D) or other shapes.Be noted that, show for clear, Fig. 4 B to Fig. 4 D only draws the generalized section of the various projections of the part of broken circle among Fig. 4 A, and right practical application Shi Zeshi represents the form of all the step-like projections 313 on the first surface 311 of substrate 31 of light-emitting diode assembly 3.
Shown in Fig. 4 A, light-emitting diode 32 is arranged at a side of substrate 31, in the present embodiment, light-emitting diode 32 is linked to second surface 312 sides of substrate 31, light-emitting diode 32 comprises first semiconductor layer 321, luminescent layer 322 and second semiconductor layer 323, is arranged at second surface 312 sides of substrate 31 according to the order of second semiconductor layer 323, luminescent layer 322 and first semiconductor layer 321.In the present embodiment, first semiconductor layer 321 can be the n type semiconductor layer, and second semiconductor layer 323 can be the p type semiconductor layer, so this only is an illustrative, certainly, first semiconductor layer 321 and second semiconductor layer 323 are the application of n type semiconductor layer and p type semiconductor layer, can be exchanged according to actual demand.
In addition, as shown in Figure 5, it is the schematic diagram according to the another kind of light-emitting diode assembly of the preferred embodiment of the present invention.The light-emitting diode 32 of present embodiment also can be linked to first surface 311 sides of substrate 31, be that light-emitting diode 32 is pasted thereon in the face of the first surface 311 of substrate 31, at this, the light-emitting diode assembly 3 of present embodiment also comprises the printing opacity adhered layer 33 of adhesive substrate 31 and light-emitting diode 32, be that printing opacity adhered layer 33 is arranged between substrate 31 and the light-emitting diode 32, wherein the material of printing opacity adhered layer 33 comprises epoxy resin.
As Fig. 4 A and shown in Figure 5, the light-emitting diode assembly 3 of present embodiment more can comprise an electrode pair 34, it comprises first contact electrode 341 and second contact electrode 342, be linked to first semiconductor layer 321 and second semiconductor layer 323 respectively, when respectively first semiconductor layer 321 and second semiconductor layer 323 being imposed voltage and produce electric current by first contact electrode 341 and second contact electrode 342, combination takes place at luminescent layer 322 in the electronics of first semiconductor layer 321 and second semiconductor layer 323 and hole, and the electron hole will transfer generation one light beam in conjunction with the energy that is discharged, this light beam penetrates to substrate 31, adjust the phase place or the direction of light beam by these step-like projection 313 step-like microstructure design, make the light field shape of light beam be non-general circle, and can make the light field shape triangular in shape according to structure Design, quadrangle or polygon.As shown in Figure 6, it is the schematic diagram according to the light field shape of a kind of light-emitting diode assembly of the preferred embodiment of the present invention.Being shaped as square with light field in Fig. 6 is the example explanation, the multiple tracks light beam that the light-emitting diode assembly 3 of adjacent setting is produced, because the light field shape can be adjusted, therefore can design make adjacent light-emitting area A ' can be not overlapped with disturb, and effectively improve the uneven problem of luminous intensity, and reach the beam shape shaping and adjust the function that distribution of light intensity distributes.
In addition, the light-emitting diode assembly 3 of present embodiment also can comprise the light transmission conductive layer (figure does not show) that is arranged between light-emitting diode 32 and the substrate 31, in order to improve the diffuser efficiency of electric current, to improve the luminous efficiency of light-emitting diode assembly 3.Wherein, the material of transparency conducting layer is selected from tin indium oxide, cadmium tin, antimony tin and group that combination constituted thereof.
In the present embodiment, as Fig. 4 A and shown in Figure 5, light-emitting diode assembly 3 can be applicable to the encapsulating structure of flip-chip (flip-chip) form, at this, light-emitting diode assembly 3 also comprises heat-radiating substrate 35, light-emitting diode 32 is linked on the heat-radiating substrate 35 with the flip-chip form, and first contact electrode 341 and second contact electrode 342 that connect light-emitting diode 32 are arranged between light-emitting diode 32 and the heat-radiating substrate 35.
Please refer to Fig. 7, Fig. 8 A and Fig. 8 B again, the manufacture method according to a kind of light-emitting diode assembly of the preferred embodiment of the present invention comprises that step S1 is to step S2.Step S1 provides a plate body, have one the surface and its on have a plurality of step-like projections; And step S2 forms at least one light-emitting diode on plate body, and light-emitting diode comprises first semiconductor layer, luminescent layer and second semiconductor layer in regular turn, and first semiconductor layer is formed on the plate body.And for explanation is easier to understand, following similar elements indicates with the components identical label.
In step S1, provide plate body 30 as the temporary substrate of making light-emitting diode, its material comprises for example alundum (Al (Al of carborundum (silicon carbide) or aluminium oxide (sapphire)
2O
3), behind the suitable cleaning step of plate body process, grow up with the epitaxial loayer that carries out follow-up light-emitting diode.
In this step, the surface of plate body 30 forms these step-like projections, and this structure can form through the following steps.Shown in Fig. 8 A, at first, form photoresist layer PR on plate body 30, in the present embodiment, photoresist layer PR can be the photoresist layer of positive photoresist number, also can be the photoresist layer of negative photoresist number certainly; Afterwards, seeing through photomask M exposes to photoresist layer PR, in the present embodiment, step of exposing is GTG (Gray level) exposure, in other words, it can be via the program of multiple tracks exposure causing exposure effect in various degree to photoresist layer PR, or form grey scale pattern on photomask M, photoresist layer PR caused exposure effect in various degree; Remove the plate body 30 of photoresist layer PR and part again according to the exposure result, to form these step-like projections 313.In the present embodiment, the plate body 30 of photoresist layer PR and part remove action, remove by etched mode, it selects the suitable etching solution of rate of etch to plate body 30 and photoresist layer PR for use, with with the transposition as a result of GTG exposure on plate body 30, to form these step-like projections 313.
In addition, in step S1, these step-like projection 313 structures also can be formed by the following step.At first, painting photoresist layer PR is on plate body 30; With die 5 impression photoresist layer PR, die 5 has the reverse pattern of these step-like projections afterwards, and the impression mode can soft impression mode or the hot padding mode form; After treating that photoresist layer PR solidifies, remove this die 5; At last, again according to these step-like projections 313 ' of photoresist layer PR, remove the plate body 30 of photoresist layer PR and part, to form these step-like projections 313.At this, because the mode that removes of the plate body 30 of the material of photoresist layer PR and photoresist layer PR and part as previously mentioned, so do not give unnecessary details at this.
In the present embodiment, formed these step-like projections 313 present for the binary optical projection with flat surfaces, it has the micro-structural of 2n stratum, and n is positive integer, and these step-like projections 313 can symmetric arrays, asymmetric geometry or irregular alignment.Right each step projection 313 also can be the projection with a curved surface, and its section can be convex (shown in Fig. 4 B), concavity (shown in Fig. 4 C), wavy (shown in Fig. 4 D) or other shapes.
In step S2, shown in Fig. 8 B, form light-emitting diode 32 on plate body 30, promptly on plate body 30, grow up in regular turn first semiconductor layer 321, luminescent layer 322 and second semiconductor layer 323, in the present embodiment, first semiconductor layer 321 can be the n type semiconductor layer, and second semiconductor layer 323 can be the p type semiconductor layer, so this is an illustrative only, is not limited in this.
In addition, the formation of these step-like projections 313 can also be carried out after step S2.
After step S2, also comprise a step, remove the light-emitting diode 32 of part, in the present embodiment, remove second semiconductor layer 323 and the luminescent layer 322 of part with etching mode.
Afterwards, also comprise a step, forming first contact electrode 341 ' removes on the part in this, and form the side of second contact electrode 342 ' in second semiconductor layer 323, and make first contact electrode 341 and second contact electrode 342 electrically connect first semiconductor layer 321 and second semiconductor layer 323 respectively.
In addition, light-emitting diode assembly also comprises a step in forming electrode 341 ', 342 ' afterwards, this light-emitting diode assembly is linked to heat-radiating substrate 35, and is applied to the encapsulating structure of flip-chip form, and so this is only for for example, not as limit.
Please refer to Fig. 9, Figure 10 A and Figure 10 B again, comprise that according to the manufacture method of the another kind of light-emitting diode assembly of the preferred embodiment of the present invention step S1 ' is to S5 '.Step S1 ' provides a plate body; Step S2 ' forms at least one light-emitting diode on plate body, and light-emitting diode comprises first semiconductor layer, luminescent layer and second semiconductor layer in regular turn, and first semiconductor layer is formed on the plate body; Step S3 ' provides a substrate, have one the surface and its on have a plurality of step-like projections; Step S4 ' adhesive substrate is on light-emitting diode; And step S5 ' removes plate body.
In step S1 ', the material and the functional character of plate body 30 are as described in the previous embodiment, so repeat no more.
In step S2 ', the structure of light-emitting diode 32, material and configuration are closed as described in the previous embodiment, so also do not give unnecessary details at this.
In step S3 ', the substrate 31 that provides a surface to have a plurality of step-like projections 313, in the present embodiment, shown in Figure 10 A, substrate 31 has first surface 311 and the second surface 312 that is oppositely arranged, these step-like projections 313 are formed on the first surface 311, and the generation type of these step-like projections 313 is as described in the previous embodiment, utilize photoresist GTG exposure (shown in Figure 10 B) or photoresist impression mode to cooperate etching mode to be shaped again, and the architectural feature of these step-like projections 313 and arrangement mode are also as described in the previous embodiment, so repeat no more.In the present embodiment, substrate 31 is a transparent substrates, and its material is selected from epoxy resin, optical glass, semiconductor and group that combination constituted thereof, and wherein semiconductor can be the semiconductor of III-V family, II-VI family or IV family.
In step S4 ', stickup has the substrate 31 of these step-like projections 313 on light-emitting diode 32, shown in Figure 10 A, first surface 311 with substrate 31 is pasted thereon in the face of second semiconductor layer 323 of light-emitting diode 32, at this, substrate 31 is pasted on light-emitting diode 32 by printing opacity adhered layer 33, and wherein the material of printing opacity adhered layer 33 comprises epoxy resin.
In addition, substrate 31 can also its second surface 312 in the face of second semiconductor layer 323 of light-emitting diode 32 and paste (figure shows) thereon, and these step-like projections 313 are formed on the light output surface of light-emitting diode assembly.
In step S5 ', divest (laser lift-off) technology with for example laser and remove plate body 30, before or after this step, also can comprise the upset light-emitting diode assembly, in order to follow-up processing step.
At step S5 ' afterwards, also comprise a step, remove the light-emitting diode 32 of part, in the present embodiment, first semiconductor layer 321 and the luminescent layer 322 of part remove with for example etching mode, after this step, form the side of first contact electrode 341 in first semiconductor layer 321, and form second contact electrode 342 on removing partly, and make first contact electrode 341 and second contact electrode 342 electrically connect first semiconductor layer 321 and second semiconductor layer 323 respectively.
In the present embodiment, at step S5 ' afterwards, also can comprise a step S6 ', this light-emitting diode assembly is linked to heat-radiating substrate 35, to be applied to the encapsulating structure of flip-chip form, so this is only for for example, not as limit.
In sum, because of foundation a kind of light-emitting diode assembly of the present invention and manufacture method thereof, its side in substrate or plate body forms a plurality of step-like projections, these step-like projections are in order to adjust the light field phase place or the direction of light beam that light-emitting diode sends, reach the light field shape that changes light beam or adjust the function that distribution of light intensity distributes, and then the light-emitting area of a plurality of light-emitting diodes is not overlapped each other, and effectively improve the uneven phenomenon of prior art luminous intensity.Wherein these step-like projections can be formed on the surface of substrate or plate body, or are formed on the joint interface of substrate and light-emitting diode.In addition, utilize the structural design of these step-like projections also can reach correcting prior art light and concentrate near the phenomenon that is confined to the optical axis, and reach the purpose of homogenizing light-emitting area.Again moreover, except the design of step-like projection, also suitable lens (lens) can be set in addition on light emitting path, that is, lens are arranged between the object of step-like projection and light beam irradiates, adjust the optical characteristics of light beam thus, and make that application is more extensive.
The above only is an illustrative, but not is restricted person.Anyly do not break away from spirit of the present invention and category, and, all should be contained in the accompanying Claim scope its equivalent modifications of carrying out or change.
Claims (20)
1. light-emitting diode assembly comprises:
Substrate has the first surface and the second surface that are oppositely arranged, and this first surface has a plurality of step-like projections; And
At least one light-emitting diode is arranged at a side of this substrate.
2. light-emitting diode assembly as claimed in claim 1, wherein this light-emitting diode is linked to this substrate in the face of this first surface or this second surface.
3. light-emitting diode assembly as claimed in claim 1, wherein this step-like projection has 2n stratum, and wherein n is a positive integer, and these step-like projections are respectively the binary optical projection.
4. light-emitting diode assembly as claimed in claim 1, wherein these step-like projections have flat surfaces or curved surface respectively.
5. light-emitting diode assembly as claimed in claim 1, wherein these step-like projections are symmetric arrays, asymmetric geometry or irregular alignment.
6. light-emitting diode assembly as claimed in claim 1 also comprises the printing opacity adhered layer, paste this substrate and this light-emitting diode, and the material of this printing opacity adhered layer comprises epoxy resin.
7. light-emitting diode assembly as claimed in claim 1, wherein the material of this substrate is a light transmissive material, and this light transmissive material is selected from epoxy resin, optical glass, semiconductor and group that combination constituted thereof.
8. light-emitting diode assembly as claimed in claim 1, wherein the material of this substrate comprises carborundum or aluminium oxide.
9. light-emitting diode assembly as claimed in claim 1 also comprises:
Light transmission conductive layer is arranged between this light-emitting diode and this substrate, and the material of this light transmission conductive layer is selected from tin indium oxide, cadmium tin, antimony tin and group that combination constituted thereof.
10. light-emitting diode assembly as claimed in claim 1, wherein this light-emitting diode comprises first semiconductor layer, a luminescent layer and second semiconductor layer, this luminescent layer is arranged between this first semiconductor layer and this second semiconductor layer.
11. light-emitting diode assembly as claimed in claim 10 also comprises:
One electrode pair comprises first contact electrode and second contact electrode, and this first contact electrode is linked to this first semiconductor layer, and this second contact electrode is linked to this second semiconductor layer.
12. light-emitting diode assembly as claimed in claim 11 also comprises:
Heat-radiating substrate is linked to this light-emitting diode, and this first contact electrode and this second contact electrode are arranged between this light-emitting diode and this heat-radiating substrate.
13. light-emitting diode assembly as claimed in claim 1, wherein this light-emitting diode produces a light beam, and this step-like projection is adjusted the light field shape of this light beam or the distribution of light intensity of this light beam distributes.
14. light-emitting diode assembly as claimed in claim 13, wherein this light field is shaped as triangle, quadrangle or polygon.
15. light-emitting diode assembly as claimed in claim 13, wherein this light beam forms light emitting path from this light-emitting diode to shining between the object, and be provided with the optical characteristics that lens are adjusted this light beam thus in this light emitting path, and make that the application of this light-emitting diode assembly is more extensive.
16. the manufacture method of a light-emitting diode assembly comprises the following steps:
One plate body is provided;
Form at least one light-emitting diode on this plate body, this light-emitting diode comprises first semiconductor layer, luminescent layer and second semiconductor layer in regular turn, and this first semiconductor layer is formed on this plate body;
One substrate is provided, have one the surface and its on have a plurality of step-like projections;
Paste this substrate on this light-emitting diode; And
Remove this plate body.
17. manufacture method as claimed in claim 16 wherein after removing this plate body step, also comprises:
Remove this light-emitting diode of part, and remove this first semiconductor layer and this luminescent layer of part;
Form first contact electrode and be electrically connected at this first semiconductor layer; And
Form second contact electrode and remove on the part, and this second contact electrode is electrically connected at this second semiconductor layer in this.
18. manufacture method as claimed in claim 16 wherein comprises the following steps: in the step that this substrate is provided
Form the photoresist layer on this substrate;
Seeing through photomask exposes to this photoresist layer; And
Remove this photoresist layer and this substrate partly according to the exposure result, to form these step-like projections.
19. manufacture method as claimed in claim 16 wherein comprises the following steps: in the step that this substrate is provided
The painting photoresist layer is on this substrate;
Impress this photoresist layer with die, this die has the reverse pattern of these step-like projections;
Remove this die; And
According to these step-like projections of this photoresist layer, remove this substrate of this photoresist layer and part, to form these step-like projections.
20. the manufacture method of a light-emitting diode assembly comprises the following steps:
One plate body is provided, has on surface and its and have a plurality of step-like projections; And
Form at least one light-emitting diode on this plate body, this light-emitting diode comprises first semiconductor layer, luminescent layer and one second semiconductor layer in regular turn, and this first semiconductor layer is formed on this plate body.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA2007100054980A CN101241959A (en) | 2007-02-08 | 2007-02-08 | LED device and its making method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA2007100054980A CN101241959A (en) | 2007-02-08 | 2007-02-08 | LED device and its making method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN101241959A true CN101241959A (en) | 2008-08-13 |
Family
ID=39933300
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNA2007100054980A Pending CN101241959A (en) | 2007-02-08 | 2007-02-08 | LED device and its making method |
Country Status (1)
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|---|---|
| CN (1) | CN101241959A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101834247A (en) * | 2009-03-03 | 2010-09-15 | Lg伊诺特有限公司 | Light emitting device, light emitting device package and lighting system including the same |
| CN102214754A (en) * | 2010-04-12 | 2011-10-12 | 海洋王照明科技股份有限公司 | Light-emitting diode (LED) and manufacturing method thereof |
| CN104465917A (en) * | 2013-04-01 | 2015-03-25 | 中国砂轮企业股份有限公司 | Patterned photoelectric substrate and manufacturing method thereof |
| EP2378570A3 (en) * | 2010-04-19 | 2015-11-18 | LG Innotek Co., Ltd. | Light emitting device with a stepped light extracting structure and method of manufacturing the same |
-
2007
- 2007-02-08 CN CNA2007100054980A patent/CN101241959A/en active Pending
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101834247A (en) * | 2009-03-03 | 2010-09-15 | Lg伊诺特有限公司 | Light emitting device, light emitting device package and lighting system including the same |
| CN101834247B (en) * | 2009-03-03 | 2015-11-25 | Lg伊诺特有限公司 | Luminescent device, light emitting device package and comprise the illuminator of light emitting device package |
| US9705037B2 (en) | 2009-03-03 | 2017-07-11 | Lg Innotek Co., Ltd. | Light emitting device, light emitting device package and lighting system including the same |
| CN102214754A (en) * | 2010-04-12 | 2011-10-12 | 海洋王照明科技股份有限公司 | Light-emitting diode (LED) and manufacturing method thereof |
| CN102214754B (en) * | 2010-04-12 | 2012-09-05 | 海洋王照明科技股份有限公司 | Light-emitting diode (LED) and manufacturing method thereof |
| EP2378570A3 (en) * | 2010-04-19 | 2015-11-18 | LG Innotek Co., Ltd. | Light emitting device with a stepped light extracting structure and method of manufacturing the same |
| CN104465917A (en) * | 2013-04-01 | 2015-03-25 | 中国砂轮企业股份有限公司 | Patterned photoelectric substrate and manufacturing method thereof |
| CN104465917B (en) * | 2013-04-01 | 2017-09-19 | 中国砂轮企业股份有限公司 | Patterned photoelectric substrate and manufacturing method thereof |
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