CN101241958A - LED device and its making method - Google Patents
LED device and its making method Download PDFInfo
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- CN101241958A CN101241958A CNA2007100054919A CN200710005491A CN101241958A CN 101241958 A CN101241958 A CN 101241958A CN A2007100054919 A CNA2007100054919 A CN A2007100054919A CN 200710005491 A CN200710005491 A CN 200710005491A CN 101241958 A CN101241958 A CN 101241958A
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Abstract
A light emitting diode device comprises a heat conducting substrate, a first semiconductor layer, a light emitting layer and a second semiconductor layer. The first semiconductor layer is formed on the heat conducting substrate, the light emitting layer is formed on the first semiconductor layer and the second semiconductor layer is formed on the light emitting layer, wherein the light-emitting surface of the second semiconductor layer is provided with a plurality of step projections. Additionally the invention also discloses a method for manufacturing the light emitting diode device.
Description
Technical field
The present invention is about a kind of light-emitting device, particularly about a kind of light-emitting diode assembly.
Background technology
(light-emitting diode LED) is a kind of light-emitting component that is formed by semi-conducting material manufacturing to light-emitting diode.Because light-emitting diode belongs to chemiluminescence, have advantages such as power consumption is low, component life is long, reaction speed is fast, add the little element of making minimum or array easily of volume, therefore in recent years, along with technology is constantly progressive, its range of application has contained indicator light, Backlight For Liquid Crystal Display Panels and even traffic sign or the automobile-used indicator light of computer or household appliances, even also has an opportunity as illuminating light source in the future.
Problems such as yet light-emitting diode still exists some problems to be improved, and for example heat radiation, luminous power deficiency and luminous efficiency are not good all are that light-emitting diode still can't replace the shortcoming of light source purposes comprehensively now.
Except that above-mentioned shortcoming, please refer to Figure 1A, its Figure 1A is the schematic diagram of the light-emitting diode assembly of routine.The light that conventional a kind of light-emitting diode assembly 1 is sent mainly is to concentrate near its optical axis OS1, anticipates promptly, and near the zone of optical axis OS1, the intensity of light is strong more more.Therefore, light-emitting diode assembly 1 is applicable to the illuminating equipment of low-angle, concentration of energy, for example flashlight, desk lamp or traffic sign.If when being applied to Backlight For Liquid Crystal Display Panels, the use of then must arrange in pairs or groups light guide plate and diffuser plate is to provide display panels uniform backlight.
In addition, please refer to Figure 1B, it is the schematic diagram of the another kind of light-emitting diode assembly of routine.Conventional a kind of light-emitting diode assembly 2 is in order to provide evenly and to have large-scale light-emitting area, and it utilizes lens 21 to cover light-emitting diode 22.Lens 21 have recess 211 around near optical axis OS2, and by recess 211 light that light-emitting diode 22 is produced is reflected effectively, penetrate lens 21 again after making it away from optical axis OS2, increase its light-emitting area thus.
From the above, though aforesaid way has increased the light-emitting area of light-emitting diode, yet the general light field that light-emitting diode caused is shaped as circle, shown in Fig. 1 C, when a plurality of light-emitting diodes 3 are arranged in the concurrent together light time simultaneously, its light field shape will have the generation of overlapping region A01, and thus, the uneven phenomenon of luminous intensity still can't be improved.
Help because of in this, how to provide a kind of light-emitting diode assembly and the manufacture method thereof that can adjust light field shape and distribution of light intensity distribution, real one of the current important topic that belongs to.
Summary of the invention
Because above-mentioned problem, purpose of the present invention is for providing a kind of light-emitting diode assembly and manufacture method thereof that can produce uniform light intensity distributions.
Another object of the present invention can cooperate its application scenario difference for providing a kind of, and can adjust the light-emitting diode assembly and the manufacture method thereof of its light field shape of design.
Edge is for reaching above-mentioned purpose, to comprise heat-conducting substrate, first semiconductor layer, luminescent layer and second semiconductor layer according to a kind of light-emitting diode assembly of the present invention.First semiconductor layer is formed on the heat-conducting substrate, and luminescent layer is formed on first semiconductor layer, and second semiconductor layer is formed on the luminescent layer.Wherein the exiting surface of second semiconductor layer has a plurality of step projections.
For reaching above-mentioned purpose, the manufacture method of foundation a kind of light-emitting diode assembly of the present invention may further comprise the steps: form first semiconductor layer on heat-conducting substrate; Form luminescent layer on first semiconductor layer; Form second semiconductor layer on luminescent layer; And remove second semiconductor layer partly, and form a plurality of step projections in the exiting surface of second semiconductor layer.
For reaching above-mentioned purpose, the manufacture method of foundation another kind of light-emitting diode assembly of the present invention may further comprise the steps: form first semiconductor layer on original substrate; Form luminescent layer on first semiconductor layer; Form second semiconductor layer on luminescent layer; Heat-conducting substrate is combined with second semiconductor layer; Remove original substrate; And remove first semiconductor layer partly, and form a plurality of step projections in the exiting surface of second semiconductor layer.
From the above, because of foundation a kind of light-emitting diode assembly of the present invention and manufacture method thereof, on the semiconductor layer of the exiting surface of light-emitting diode assembly, form the step projection, and the step projection can be binary optical (Binary optical) projection, therefore can be by the light field shape of the step projection light beam that luminescent layer is emitted, be adjusted into needed triangle, quadrangle or other shapes, and can adjust the design of each step projection, make the equally distributed purpose of light beam to reach.Again moreover, except the design of step projection, suitable lens (lens) also can be set in addition on light emitting path, that is, lens are arranged between the object of step projection and light beam irradiates, adjust the optical characteristics of light beam thus, and make that application is more extensive.
Description of drawings
Figure 1A is the schematic diagram of the light-emitting diode assembly of routine.
Figure 1B is the schematic diagram of the another kind of light-emitting diode assembly of routine.
Fig. 1 C is the schematic diagram of the conventional light field shape that light-emitting diode caused.
Fig. 2 A is the schematic diagram according to a kind of light-emitting diode assembly of the preferred embodiment of the present invention.
Fig. 2 B to Fig. 2 D is the generalized section of the various step projections of broken circle part among Fig. 2 A.
Fig. 3 A and Fig. 3 B are the schematic diagram according to the light field shape that light-emitting diode caused of the preferred embodiment of the present invention.
Fig. 4 is another schematic diagram according to a kind of light-emitting diode assembly of the preferred embodiment of the present invention.
Fig. 5 is the flow chart according to the manufacture method of a kind of light-emitting diode assembly of first embodiment of the invention.
Fig. 6 A to Fig. 6 D is the schematic diagram of the light-emitting diode assembly that cooperates with Fig. 5.
Fig. 7 is the detailed step flow process of step S04 among Fig. 5.
Fig. 8 A to Fig. 8 C is the schematic diagram of the light-emitting diode assembly that cooperates with Fig. 7.
Fig. 9 is the flow chart according to the manufacture method of a kind of light-emitting diode assembly of second embodiment of the invention.
Figure 10 A to Figure 10 G for the schematic diagram of the light-emitting diode assembly of Fig. 7 cooperation.
Description of reference numerals
1,2,3,4,5: light-emitting diode assembly
21: lens
211: recess
22: light-emitting diode
41,51: heat-conducting substrate
42,52: the first semiconductor layers
43,53: luminescent layer
44,54: the second semiconductor layers
441: exiting surface
45: insulating barrier
46: adhesion coating
47: the reflector
50: original substrate
A01: overlapping region
C01, C11: step projection
MA1: photomask
OS1, OS2: optical axis
PR1: photoresist layer
Embodiment
Hereinafter with reference to correlative type, light-emitting diode assembly and manufacture method thereof according to the preferred embodiment of the present invention are described.
Please refer to Fig. 2 A, the light-emitting diode assembly 4 of the preferred embodiment of the present invention comprises heat-conducting substrate 41, first semiconductor layer 42, luminescent layer 43 and second semiconductor layer 44.
In the present embodiment, the material of heat-conducting substrate 41 can be selected from silicon, GaAs, gallium phosphide, carborundum, boron nitride, aluminium, aluminium nitride, copper and group that combination constituted thereof.
In the present embodiment, first semiconductor layer 42 can be p type doped layer and second semiconductor layer 44 can be n type doped layer, and certainly, first semiconductor layer 42 also can be n type doped layer and second semiconductor layer 44 also can be p type doped layer, is not limited at this.
These step projections C01 of the second above-mentioned semiconductor layer 44 is according to the difference of needed light field shape and distribution of light intensity, and it can be, and axial symmetry is arranged, non-axial symmetry is arranged or irregular alignment, at this, is example with the irregular alignment.In addition, in the present embodiment, formed these step projections C01 is that binary optical (binary optical) projection with flat surfaces presents, in other words, these step projections C01 has 2N stratum, wherein N be for example 1,2, the positive integer of 3... etc.
Yet, the present invention is not restricted to this, for example, these step projections C01 is except can be the binary optical projection with flat surfaces, also can be the projection with a curved surface, its section can be convex (shown in Fig. 2 B), concavity (shown in Fig. 2 C), wavy (shown in Fig. 2 D) or other shapes.Be noted that be clear and show, Fig. 2 B to Fig. 2 D only draws the generalized section of the various step projections of broken circle part among Fig. 2 A, right practical application Shi Zeshi represents the form of all step projection C01 of second semiconductor layer 44 of light-emitting diode assembly 4.
Then, please refer to Fig. 3 A, the vertical view of the light field shape of its light-emitting diode assembly 4.By the adjustment of these step projections C01 in the present embodiment, the distribution of light intensity of light-emitting diode assembly 4 distributes and can adjust arbitrarily, and its light field is shaped as quadrangle.Right the present invention is not restricted to this, and according to the difference of step projection C01 design, the light field shape that it caused also can be triangle, hexagon or octagonal polygon, is not limited at this.
Shown in Fig. 3 B, when a plurality of light-emitting diode assemblies 4 were provided with arranged side by side or array way, the light field shape that it caused can closely be arranged and can be not overlapped, adds its distribution of light intensity to distribute uniformly, and uniform surface light source can be provided for another example.
Secondly, please refer to Fig. 4, it is another schematic diagram according to a kind of light-emitting diode assembly of the preferred embodiment of the present invention.In the present embodiment, more insulating barrier 45, adhesion coating 46 and reflector 47 can be set in regular turn between the heat-conducting substrate 41 and first semiconductor layer 42, to strengthen its light beam service efficiency or bond ability.Wherein, the material in reflector is selected from platinum, gold, silver, palladium, nickel, chromium, titanium and group that combination constituted thereof, and the material of insulating barrier is selected from aluminium nitride or carborundum, and the material of adhesion coating is selected from tin cream, tin silver paste, silver paste and group that combination constituted thereof.
What deserves to be mentioned is that the order that is provided with in insulating barrier 45, adhesion coating 46 and reflector 47 also is not limited to above-mentioned order, its can be according to the difference of effect design interchangeable order, or only have at least one of them.
At above-mentioned light-emitting diode assembly 4, below the manufacture method of light-emitting diode assembly 4 will be described with first embodiment and second embodiment respectively.
[first embodiment]
Please refer to Fig. 5 and simultaneously with reference to Fig. 6 A to Fig. 6 D, Fig. 5 is the flow chart according to the manufacture method of a kind of light-emitting diode assembly of first embodiment of the invention, and Fig. 6 A to Fig. 6 D is the schematic diagram of the light-emitting diode assembly that cooperates with Fig. 5.The manufacture method of the light-emitting diode assembly 4 of first embodiment of the invention comprises that step S01 is to step S04.
As shown in Figure 6A, step S01 forms first semiconductor layer 42 on heat-conducting substrate 41, and in the present embodiment, first semiconductor layer 42 is a n type doped layer.Shown in Fig. 6 B, step S02 forms luminescent layer 43 on first semiconductor layer 42.Shown in Fig. 6 C, step S03 forms second semiconductor layer 44 on luminescent layer 43, and in the present embodiment, second semiconductor layer 44 is a p type doped layer.Shown in Fig. 6 D, step S04 removes second semiconductor layer 44 of part, to form a plurality of step projection C01 at its exiting surface 441.
From the above, at mode and the arrange in pairs or groups etch process of the step that removes second semiconductor layer 44 partly with GTG exposure (Graylevel).Know clearly it, please refer to Fig. 7 and arrange in pairs or groups simultaneously shown in Fig. 8 A to Fig. 8 C, step S04 comprises that also step S041 is to step S043.
Shown in Fig. 8 A, step S041 forms photoresist layer PR1 on second semiconductor layer 44.In the present embodiment, photoresist layer PR1 can be the photoresist layer of positive photoresist number, also can be the photoresist layer of negative photoresist number certainly.
Shown in Fig. 8 B, step S042 sees through photomask MA1 photoresist layer PR1 is exposed.In the present embodiment, step of exposing is GTG exposure, and in other words, it can be via the program of multiple tracks exposure to cause exposure effect in various degree to photoresist layer PR1, or on photomask MA1, form grey scale pattern, photoresist layer PR1 caused exposure effect in various degree.
Shown in Fig. 8 C, step S043 to remove second semiconductor layer 44 of photoresist layer PR1 and part, forms step projection C01 with the exiting surface 441 at second semiconductor layer 44 according to the exposure result.In the present embodiment, second semiconductor layer 44 of photoresist layer PR1 and part remove action, remove by etched mode.It selects the suitable etching solution of rate of etch to second semiconductor layer 44 and photoresist layer PR1 for use, with the transposition as a result of GTG exposure on second semiconductor layer 44, to form step projection C01.
[second embodiment]
Below, please refer to Fig. 9 also arranges in pairs or groups shown in Figure 10 A to Figure 10 G simultaneously, Fig. 9 is the flow chart according to the manufacture method of a kind of light-emitting diode assembly of second embodiment of the invention, and Figure 10 A to Figure 10 G for the schematic diagram of the light-emitting diode assembly of Fig. 7 cooperation.The manufacture method of the light-emitting diode assembly 5 of second embodiment of the invention comprises that step S11 is to step S17.
Shown in Figure 10 A, step S11 forms first semiconductor layer 52 on original substrate 50, in the present embodiment, and the substrate that original substrate 50 is used for epitaxial growth.Shown in Figure 10 B, step S12 forms luminescent layer 53 on first semiconductor layer 52.Shown in Figure 10 C, step S13 forms second semiconductor layer 54 on luminescent layer 53.Shown in Figure 10 D, step S14 combines heat-conducting substrate 51 with second semiconductor layer 54.Shown in Figure 10 E, step S15 removes original substrate 50, and in the present embodiment, original substrate 50 can laser divests (laser lift-off) technology to be finished.Shown in Figure 10 F, the step S16 light-emitting diode assembly 5 that overturns.Shown in Figure 10 G, step S17 removes first semiconductor layer 52 of part, and forms a plurality of step projection C11 in the exiting surface 521 of first semiconductor layer 52.
The person of noting, remove in the step and first embodiment of first semiconductor layer 52 partly, the step that removes second semiconductor layer 54 of part has identical detailed procedure, and its difference only is that second semiconductor layer 44 is replaced into first semiconductor layer 52, so no longer add to give unnecessary details in this.
In addition, what deserves to be mentioned is, in the manufacture method of the light-emitting diode assembly of above-mentioned first embodiment and second embodiment, between heat-conducting substrate and first semiconductor layer or second semiconductor layer, in order to add strong beam utilization ratio or bond ability, it can form or be provided with reflector, insulating barrier and/or adhesion coating again, and right because its setting or formation order are according to the practical design difference, there is multiple order to change, so do not add to give unnecessary details in this.
In sum, because of foundation a kind of light-emitting diode assembly of the present invention and manufacture method thereof, on the semiconductor layer of the exiting surface of light-emitting diode assembly, form the step projection, and the step projection can be the binary optical projection, therefore can be by the light field shape of the step projection light beam that luminescent layer is emitted, be adjusted into needed triangle, quadrangle or other shapes, and can adjust the design of each step projection, to reach the equally distributed purpose of the distribution of light intensity that makes light beam.Again moreover, except the design of step projection, suitable lens (lens) also can be set in addition on light emitting path, that is, lens are arranged between the object of step projection and light beam irradiates, adjust the optical characteristics of light beam thus, and make that application is more extensive.
The above only is an illustrative, but not is restricted person.Anyly do not break away from spirit of the present invention and category, and, all should be contained in the accompanying Claim scope its equivalent modifications of carrying out or change.
Claims (20)
1. light-emitting diode assembly comprises:
Heat-conducting substrate;
First semiconductor layer is formed on this heat-conducting substrate;
Luminescent layer is formed on this first semiconductor layer; And
Second semiconductor layer is formed on this luminescent layer, and wherein the exiting surface of this second semiconductor layer has a plurality of step projections.
2. light-emitting diode assembly as claimed in claim 1, wherein this first semiconductor layer is a p type doped layer, and this second semiconductor layer is a n type doped layer, and perhaps this first semiconductor layer is a n type doped layer, and this second semiconductor layer is a p type doped layer.
3. light-emitting diode assembly as claimed in claim 1, wherein these step projections are the binary optical projection, and these step projections have 2N stratum, N is a positive integer.
4. light-emitting diode assembly as claimed in claim 1, wherein these step-like projections have flat surfaces or curved surface respectively.
5. light-emitting diode assembly as claimed in claim 1, wherein these step projections of this second semiconductor layer are that axial symmetry is arranged, non-axial symmetry is arranged or irregular alignment.
6. light-emitting diode assembly as claimed in claim 1, wherein this luminescent layer produces a light beam, and this exiting surface of this second semiconductor layer of directive.
7. light-emitting diode assembly as claimed in claim 6, wherein this light beam is shaped as triangle, quadrangle or polygon in penetrating the formed light field of this exiting surface.
8. light-emitting diode assembly as claimed in claim 6, wherein this light beam forms light emitting path from this luminescent layer to shining between the object, and this light emitting path is provided with the optical characteristics that lens are adjusted this light beam thus, and makes that the application of this light-emitting diode assembly is more extensive.
9. light-emitting diode assembly as claimed in claim 1 also comprises the reflector, and it is arranged between this heat-conducting substrate and this first semiconductor layer, and the material in this reflector is selected from platinum, gold, silver, palladium, nickel, chromium, titanium and group that combination constituted thereof.
10. light-emitting diode assembly as claimed in claim 1 also comprises insulating barrier, and it is arranged between this heat-conducting substrate and this first semiconductor layer, and the material of this insulating barrier is selected from aluminium nitride or carborundum.
11. light-emitting diode assembly as claimed in claim 1 also comprises adhesion coating, it is arranged between this heat-conducting substrate and this first semiconductor layer, and the material of this adhesion coating is selected from tin cream, tin silver paste, silver paste and group that combination constituted thereof.
12. light-emitting diode assembly as claimed in claim 1, wherein the material of this heat-conducting substrate is selected from silicon, GaAs, gallium phosphide, carborundum, boron nitride, aluminium, aluminium nitride, copper and group that combination constituted thereof.
13. the manufacture method of a light-emitting diode assembly may further comprise the steps:
Form first semiconductor layer on heat-conducting substrate;
Form luminescent layer on this first semiconductor layer;
Form second semiconductor layer on this luminescent layer; And
Remove this second semiconductor layer of part, and form a plurality of step projections at its exiting surface.
14. manufacture method as claimed in claim 13, the step that wherein removes this second semiconductor layer of part comprises:
Form the photoresist layer on this second semiconductor layer;
Seeing through photomask exposes to this photoresist layer; And
Remove this photoresist layer and this second semiconductor layer partly according to the exposure result, to form these step projections.
15. the manufacture method of a light-emitting diode assembly may further comprise the steps:
Form first semiconductor layer on original substrate;
Form luminescent layer on this first semiconductor layer;
Form second semiconductor layer on this luminescent layer;
Heat-conducting substrate is combined with this second semiconductor layer;
Remove this original substrate; And
Remove this first semiconductor layer of part, and form a plurality of step projections at its exiting surface.
16. as claim 13 or 15 described manufacture methods, wherein through this photomask this photoresist layer being carried out step of exposing is the GTG exposure.
17. as claim 13 or 15 described manufacture methods, wherein these step projections are the binary optical projection, and these step projections have 2N stratum, N is a positive integer.
18. as claim 13 or 15 described manufacture methods, wherein these step-like projections have flat surfaces or curved surface respectively.
19. manufacture method as claimed in claim 15, wherein in this heat-conducting substrate with after this second semiconductor layer combines, also comprise step:
This light-emitting diode assembly overturns.
20. manufacture method as claimed in claim 15, the step that wherein removes this first semiconductor layer of part comprises:
Form the photoresist layer on this first semiconductor layer;
Seeing through photomask exposes to this photoresist layer; And
Remove this photoresist layer and this first semiconductor layer partly according to the exposure result, to form these step projections.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA2007100054919A CN101241958A (en) | 2007-02-08 | 2007-02-08 | LED device and its making method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA2007100054919A CN101241958A (en) | 2007-02-08 | 2007-02-08 | LED device and its making method |
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| Publication Number | Publication Date |
|---|---|
| CN101241958A true CN101241958A (en) | 2008-08-13 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNA2007100054919A Pending CN101241958A (en) | 2007-02-08 | 2007-02-08 | LED device and its making method |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101834247A (en) * | 2009-03-03 | 2010-09-15 | Lg伊诺特有限公司 | Light emitting device, light emitting device package and lighting system including the same |
| CN101840984A (en) * | 2009-03-16 | 2010-09-22 | Lg伊诺特有限公司 | Light emitting device |
| CN102566210A (en) * | 2010-11-25 | 2012-07-11 | 财团法人工业技术研究院 | Photographic projection device and light-emitting sensing module |
| US9357188B2 (en) | 2011-11-28 | 2016-05-31 | Industrial Technology Research Institute | Photography and projection apparatus and light emitting and sensing module |
-
2007
- 2007-02-08 CN CNA2007100054919A patent/CN101241958A/en active Pending
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101834247A (en) * | 2009-03-03 | 2010-09-15 | Lg伊诺特有限公司 | Light emitting device, light emitting device package and lighting system including the same |
| CN101834247B (en) * | 2009-03-03 | 2015-11-25 | Lg伊诺特有限公司 | Luminescent device, light emitting device package and comprise the illuminator of light emitting device package |
| US9705037B2 (en) | 2009-03-03 | 2017-07-11 | Lg Innotek Co., Ltd. | Light emitting device, light emitting device package and lighting system including the same |
| CN101840984A (en) * | 2009-03-16 | 2010-09-22 | Lg伊诺特有限公司 | Light emitting device |
| CN101840984B (en) * | 2009-03-16 | 2015-09-09 | Lg伊诺特有限公司 | Luminescent device |
| CN102566210A (en) * | 2010-11-25 | 2012-07-11 | 财团法人工业技术研究院 | Photographic projection device and light-emitting sensing module |
| CN102566210B (en) * | 2010-11-25 | 2015-05-13 | 财团法人工业技术研究院 | Photographic projection device and light-emitting sensing module |
| US9357188B2 (en) | 2011-11-28 | 2016-05-31 | Industrial Technology Research Institute | Photography and projection apparatus and light emitting and sensing module |
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Open date: 20080813 |