CN101236938A - Heat radiation method and structure of chip package module - Google Patents
Heat radiation method and structure of chip package module Download PDFInfo
- Publication number
- CN101236938A CN101236938A CNA2007100079827A CN200710007982A CN101236938A CN 101236938 A CN101236938 A CN 101236938A CN A2007100079827 A CNA2007100079827 A CN A2007100079827A CN 200710007982 A CN200710007982 A CN 200710007982A CN 101236938 A CN101236938 A CN 101236938A
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- CN
- China
- Prior art keywords
- silicon crystal
- encapsulation module
- chip encapsulation
- heat
- heat dissipation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/11—Manufacturing methods
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/161—Cap
- H01L2924/162—Disposition
- H01L2924/16235—Connecting to a semiconductor or solid-state bodies, i.e. cap-to-chip
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- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Abstract
The invention provides a radiation method for a chip package module and a construction of the chip package module. The method mainly comprises the following steps of arranging a hot runner penetrating to an internal silicon wafer at a shell base of the chip package module, arranging metal materials in all the hot runners and forming a thermal conductor connected between the silicon wafer and the shell surface after depositing metal material by means of metal deposition, thereby solving the overheating phenomenon due to high frequency operation of the chip package module effectively and avoiding the failure of chip effectively.
Description
Technical field
The cooling mechanism of the relevant a kind of chip encapsulation module of the present invention, especially the packaging structure at chip encapsulation module is improved, the superheating phenomenon that aims to provide a kind of effective solution chip encapsulation module high frequency running and produce, and the heat dissipating method and the relative configurations that prevent chip failure.
Background technology
In recent years; because the requirement of electronic product lightweight, miniaturization; the assembling of electronic component and structure packing technique; also gradually toward light, thin, short, little target development; general single-chip or multicore sheet electronic component are in order to have the ability of transmission I/O signal and electric current; and the function of dispelling the heat and protecting wafer is provided, must be constructed to through packaging technology and be integrated good chip encapsulation module.
With as shown in Figure 1 imageing sensor is example, and it is one of typical modularization Chip Packaging element at last, and similarly imageing sensor is the mechanical structure that includes housing 10, and by two parts of circuit structure of silicon crystal 12 and circuit pin 13; Wherein, all sensitive chips 11 are arranged on the silicon crystal 12 of housing 10 inside.
The solder mask 16 that below silicon crystal 12, is configured with insulating barrier 14, metal conducting layer 15 in regular turn and is positioned at outermost in addition, be connected with sensitive chip 11 forming circuits of silicon crystal 12 tops by metal conducting layer 15, and on solder mask 16, be configured with the circuit pin 13 that is connected to metal conducting layer 15, each circuit pin 13 and be formed with carry out conveniently that surface soldered sticks together spherical at solder mask 16.In the middle of this known chip encapsulation module structure, insulating barrier 14, metal conducting layer 15 and position promptly constitute the base portion of housing 10 at the solder mask 16 of outermost, then are made of a transparent cover plate 17 that is sealed on sensitive chip 11 tops as for the top of housing 10.
Similarly existing chip encapsulation module mostly is the material of silicon crystal greatly, and thermolysis to a certain degree can be provided, but owing to whole silicon crystal is coated by the coefficient of heat conduction low solder mask and insulating barrier fully; The actual behaviour in service of image taking sensor is an example, when the entire chip package module is handled fast-changing image, too frequently can produce overheated phenomenon because electric current changes, and more makes sensitive chip lose efficacy easily.
Summary of the invention
In view of this, main purpose of the present invention is to provide a kind of effective solution chip encapsulation module high frequency running and the superheating phenomenon of generation, and the heat dissipating method and the relative configurations that prevent chip failure.
The invention provides a kind of heat dissipating method of chip encapsulation module, be provided with the warm channel that is through to inner silicon crystal at the housing base portion of chip encapsulation module, and heat dissipation conductor be set in each warm channel to be engaged between silicon crystal and the surface of shell.
In the heat dissipating method of said chip package module, this heat dissipation conductor utilizes metal material in the metal deposition mode, makes metal material deposition back form the heat dissipation conductor that is engaged between silicon crystal and the surface of shell.
In the heat dissipating method of said chip package module, be provided with accommodation space between the bottom surface of this silicon crystal and the housing, make the metal of deposition can be diffused into the bottom surface of silicon crystal, and make each heat dissipation conductor constitute connection in the bottom surface of silicon crystal.
The present invention also provides a kind of heat-dissipating structure of chip encapsulation module, and the die/wafer configuration of its chip encapsulation module is on a silicon crystal of being located at enclosure interior, and wherein this housing base portion is provided with some heat dissipation conductors that are engaged between silicon crystal and the surface of shell.
According to the heat-dissipating structure of above-mentioned chip encapsulation module, wherein each described heat dissipation conductor directly touches the silicon crystal bottom surface.
According to the heat-dissipating structure of above-mentioned chip encapsulation module, wherein each described heat dissipation conductor gos deep into silicon crystal inside.
According to the heat-dissipating structure of above-mentioned chip encapsulation module, wherein each described heat dissipation conductor is through to the top layer of silicon crystal.
According to the heat-dissipating structure of above-mentioned chip encapsulation module, wherein each described heat dissipation conductor constitutes connection in the bottom surface of silicon crystal.
According to the heat-dissipating structure of above-mentioned chip encapsulation module, wherein this housing base portion is made of insulating barrier, metal conducting layer and the solder mask of the below that is configured in silicon crystal in regular turn.During enforcement, mainly the housing base portion at chip encapsulation module is provided with the warm channel that is through to inner silicon crystal, and in each warm channel, utilize metal material in the metal deposition mode, make metal material deposition back form the heat dissipation conductor that is engaged between silicon crystal and the surface of shell, solve the superheating phenomenon that the running of chip encapsulation module high frequency is produced thus, and prevent chip failure.
Description of drawings
Fig. 1 is the sensitive chip encapsulation modular structure cutaway view of conventional images transducer.
Fig. 2 is the chip encapsulation module structure cutaway view of first embodiment of the invention.
Fig. 3 is the chip encapsulation module structure cutaway view of second embodiment of the invention.
Fig. 4 is the chip encapsulation module structure cutaway view of third embodiment of the invention.
Fig. 5 is the chip encapsulation module structure cutaway view of fourth embodiment of the invention.
Wherein, description of reference numerals is as follows:
11 sensitive chips
13 circuit pins
10 housings
12 silicon crystal
14 insulating barriers
15 metal conducting layers
16 solder masks
17 transparent cover plates
21 sensitive chips
23 circuit pins
20 housings
22 silicon crystal
24 insulating barriers
25 metal conducting layers
26 solder masks
27 warm channel
28 heat dissipation conductors
29 accommodation spaces
Embodiment
For clearly demonstrating major technique content of the present invention, and execution mode, existing conjunction with figs. is described as follows:
The present invention's " heat dissipating method of chip encapsulation module and structure ", the cooling mechanism of relevant a kind of chip encapsulation module, the superheating phenomenon that provides a kind of effective solution chip encapsulation module high frequency running to be produced, and the heat dissipating method and the relative configurations that prevent chip failure; As shown in Figure 2, applied chip encapsulation module includes the mechanical structure of housing 20 equally, and two parts of circuit structure of being made up of silicon crystal 22 and circuit pin 23.
Wherein, sensitive chip 21 is configured on the silicon crystal 22, and the below of silicon crystal 22 is then for being configured with the structure of the housing 20 of insulating barrier 24, metal conducting layer 25 and solder mask 26 in regular turn; Whole housing 20 promptly is connected with sensitive chip 21 forming circuits of silicon crystal 22 tops by metal conducting layer 25, and is configured with the circuit pin 23 that is connected to metal conducting layer 25 on solder mask 26.
Integral heat sink mechanism mainly is provided with the warm channel 27 that is through to inner silicon crystal 22 at housing 20 base portions of chip encapsulation module, and in each warm channel 27, utilize metal material, make metal material deposition back form the heat dissipation conductor 28 that is engaged between silicon crystal and housing 20 surfaces in the metal deposition mode; Thus, conduction of heat that can be by heat dissipation conductor 28 is delivered to housing 20 outside releases with the thermal source of chip encapsulation module inside, effectively solves the running of chip encapsulation module high frequency and the superheating phenomenon that produces, and prevents that thus sensitive chip lost efficacy.
In the specific implementation, each heat dissipation conductor 28 is formed with spherical stereochemical structure on the surface of housing 20, can further promote thermolysis; Contact mode as for heat dissipation conductor 28 and silicon crystal 22 then can reach the purpose that thermal source is delivered to housing 20 outsides in the mode of directly touching silicon crystal 22 bottom surfaces as shown in Figure 2; Certainly, also can be as shown in Figure 3, heat dissipation conductor 28 is goed deep into silicon crystal 22 inside, or as shown in Figure 4, heat dissipation conductor 28 is through to the top layer of silicon crystal 22, or as shown in Figure 5, between the bottom surface of silicon crystal 22 and housing 20, be provided with accommodation space 29, make the metal of deposition can be diffused into the bottom surface of silicon crystal 22, and each heat dissipation conductor 28 is constituted in the bottom surface of silicon crystal 22 connect, increase the contact area of heat dissipation conductor 28 and silicon crystal 22 thus, improve the efficient of thermal source discharging.
As mentioned above, the invention provides the preferred feasible cooling mechanism of a kind of chip encapsulation module, the existing application of in accordance with the law submitting patent of invention to; Shown in the above implementation and accompanying drawing, being the preferred embodiments of the present invention, is not to limit the present invention with this, and therefore, structure every and of the present invention, device, feature etc. are similar to, duplicate, and all should belong within goal of the invention of the present invention and the claim.
Claims (9)
1. the heat dissipating method of a chip encapsulation module is provided with the warm channel that is through to inner silicon crystal at the housing base portion of chip encapsulation module, and heat dissipation conductor is set to be engaged between silicon crystal and the surface of shell in each warm channel.
2. the heat dissipating method of chip encapsulation module as claimed in claim 1, this heat dissipation conductor utilizes metal material in the metal deposition mode, makes metal material deposition back form the heat dissipation conductor that is engaged between silicon crystal and the surface of shell.
3. the heat dissipating method of chip encapsulation module as claimed in claim 1 is provided with accommodation space between the bottom surface of this silicon crystal and the housing, makes the metal of deposition can be diffused into the bottom surface of silicon crystal, and makes each heat dissipation conductor constitute connection in the bottom surface of silicon crystal.
4. the heat-dissipating structure of a chip encapsulation module, the die/wafer configuration of its chip encapsulation module is characterized in that on a silicon crystal of being located at enclosure interior:
This housing base portion is provided with some heat dissipation conductors that are engaged between silicon crystal and the surface of shell.
5. the heat-dissipating structure of chip encapsulation module as claimed in claim 4, wherein each described heat dissipation conductor directly touches the silicon crystal bottom surface.
6. the heat-dissipating structure of chip encapsulation module as claimed in claim 4, wherein each described heat dissipation conductor gos deep into silicon crystal inside.
7. the heat-dissipating structure of chip encapsulation module as claimed in claim 4, wherein each described heat dissipation conductor is through to the top layer of silicon crystal.
8. the heat-dissipating structure of chip encapsulation module as claimed in claim 4, wherein each described heat dissipation conductor constitutes in the bottom surface of silicon crystal and connects.
9. the heat-dissipating structure of chip encapsulation module as claimed in claim 4, wherein this housing base portion is made of insulating barrier, metal conducting layer and the solder mask of the below that is configured in silicon crystal in regular turn.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA2007100079827A CN101236938A (en) | 2007-02-01 | 2007-02-01 | Heat radiation method and structure of chip package module |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA2007100079827A CN101236938A (en) | 2007-02-01 | 2007-02-01 | Heat radiation method and structure of chip package module |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN101236938A true CN101236938A (en) | 2008-08-06 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNA2007100079827A Pending CN101236938A (en) | 2007-02-01 | 2007-02-01 | Heat radiation method and structure of chip package module |
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| Country | Link |
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| CN (1) | CN101236938A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101996953A (en) * | 2009-08-19 | 2011-03-30 | 精材科技股份有限公司 | Chip package and fabrication method thereof |
| CN104979301A (en) * | 2014-04-02 | 2015-10-14 | 精材科技股份有限公司 | Chip package and method for manufacturing the same |
| US9181084B2 (en) | 2009-01-06 | 2015-11-10 | Chien-Hung Liu | Electronic device package and fabrication method thereof |
| CN115954169A (en) * | 2023-01-12 | 2023-04-11 | 广东长虹电子有限公司 | High-power SMD thermistor |
-
2007
- 2007-02-01 CN CNA2007100079827A patent/CN101236938A/en active Pending
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9181084B2 (en) | 2009-01-06 | 2015-11-10 | Chien-Hung Liu | Electronic device package and fabrication method thereof |
| US9771259B2 (en) | 2009-01-06 | 2017-09-26 | Xintec Inc. | Method for fabricating electronic device package |
| CN104803346B (en) * | 2009-01-06 | 2018-03-06 | 精材科技股份有限公司 | Electronic element packaging body and preparation method thereof |
| CN101996953A (en) * | 2009-08-19 | 2011-03-30 | 精材科技股份有限公司 | Chip package and fabrication method thereof |
| CN101996953B (en) * | 2009-08-19 | 2016-03-02 | 精材科技股份有限公司 | Chip packing-body and manufacture method thereof |
| CN104979301A (en) * | 2014-04-02 | 2015-10-14 | 精材科技股份有限公司 | Chip package and method for manufacturing the same |
| CN104979301B (en) * | 2014-04-02 | 2018-02-02 | 精材科技股份有限公司 | Chip package and method for manufacturing the same |
| CN115954169A (en) * | 2023-01-12 | 2023-04-11 | 广东长虹电子有限公司 | High-power SMD thermistor |
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Open date: 20080806 |