CN101236337A - Pixel structure - Google Patents
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- CN101236337A CN101236337A CNA2007100063710A CN200710006371A CN101236337A CN 101236337 A CN101236337 A CN 101236337A CN A2007100063710 A CNA2007100063710 A CN A2007100063710A CN 200710006371 A CN200710006371 A CN 200710006371A CN 101236337 A CN101236337 A CN 101236337A
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Abstract
The present invention discloses a pixel structure suitable for being arranged on a substrate; the pixel structure comprises a scan line, a data line, a thin film transistor, a main pixel electrode and at least one secondary pixel electrode. The scan line and the data line are arranged on the substrate; the thin film transistor is arranged on the substrate and is electrically connected with the scan line and the data line. The main pixel electrode is electrically connected to a drain of the thin film transistor via a contact window opening. The secondary pixel electrode is positioned over the drain which is electrically coupled to the secondary pixel electrode.
Description
Technical field
The invention relates to a kind of dot structure, and particularly be applied in the display panels and can improve the dot structure of colour cast (color shift) phenomenon relevant for a kind of.
Background technology
Thin Film Transistor-LCD (TFT-LCD) because have that high image quality, space utilization efficient are good, low consumpting power, advantageous characteristic such as radiationless, thereby become the market mainstream gradually.At present, market is towards characteristics such as height contrast (High Contrast Ratio), rapid reaction and wide viewing angles for the performance requirement of LCD.Wherein, can reach the technology of wide viewing angle requirement, generally be to adopt multi-zone vertical alignment nematic (Multi-domainVertically Alignment, MVA) Thin Film Transistor-LCD, multiple domain horizontal direction matching (Multi-domainHorizontal Alignment, MHA) Thin Film Transistor-LCD etc.
Fig. 1 is the diagrammatic cross-section of existing multi-zone vertical alignment nematic Thin Film Transistor-LCD.Please refer to Fig. 1, this multi-zone vertical alignment nematic Thin Film Transistor-LCD 100 comprises: thin-film transistor array base-plate 110, colored optical filtering substrates 120 and liquid crystal layer 130.Particularly, on thin-film transistor array base-plate 110 and colored optical filtering substrates 120, be provided with thrust 140 or slit pattern (not illustrating).So, when between two substrates 120,130, forming electric field, can make the liquid crystal molecule 132 in the liquid crystal layer 130 topple over and form the distribution of 4 zones (4 domain) toward different directions.Thus, can reach the display effect of wide viewing angle.
Though the Thin Film Transistor-LCD of multi-zone vertical alignment nematic or horizontal direction matching can reach the purpose of wide viewing angle, still there is colour cast (color shift) problem in it.So-called colour cast refers to: when the user watches the shown image of display with different visual angles, can see the image of different color contrast.Particularly, when the user watched at bigger visual angle, being seen image can produce the color phenomenon of white (color washout) partially.The reason that the angle of squint direction produces colour cast be in, briliancy during low GTG is bigger than normal, it is that briliancy with this moment reduces effectively that desire is improved color offset phenomenon.Therefore, in No. 2005/0030439, U.S. Pat, disclosed and a kind of pixel has further been cut apart, and formed the pixel design of more multiple areal distribution (multi-domain design).
Fig. 2 is for looking synoptic diagram on the colored optical filtering substrates of No. 2005/0030439, U.S. Pat.Fig. 3 is for looking synoptic diagram on the thin-film transistor array base-plate of No. 2005/0030439, U.S. Pat.Please jointly with reference to Fig. 2 and Fig. 3, the first pixel electrode 190a and the second pixel electrode 190b lay respectively at a pixel about two zones.Wherein, the first pixel electrode 190a electrically connects with drain electrode 175 by contact window 181.And drain electrode 175 extends to the below of the second pixel electrode 190b.Therefore, the voltage of the second pixel electrode 190b produces voltage drop via capacitance coupling effect, makes to be applied to voltage on the second pixel electrode 190b less than the voltage that is applied on the first pixel electrode 190a.So, because the first pixel electrode 190a is different with the voltage of the second pixel electrode 190b, thus can reach in, when hanging down GTG, the zone of the second pixel electrode 190b is darker, and when high gray, the close effect of regional briliancy of the first pixel electrode 190a and the second pixel electrode 190b.
In addition, drain electrode 175 has lighttight characteristic.Therefore, for fear of reducing aperture ratio of pixels, drain electrode 175 needs the thrust 272 on the corresponding colored optical filtering substrates that illustrates as Fig. 2 and is provided with.
Yet, under different panel size and pixel resolution, exist the spacing that must keep thrust or slit, so that the optimized demands of characteristic such as the reaction time of panel, light percent of pass.So, above-mentioned pixel is divided into about the pixel design of two parts, not only be difficult to adjust the area ratio of different pixel electrodes, and do not make drain electrode 175 corresponding thrusts 272 when panel skew and when being provided with, will seriously have influence on the aperture opening ratio of panel.
Summary of the invention
In view of this, the purpose of this invention is to provide a kind of dot structure, the display panels with this dot structure can improve the image colour cast, and can at random adjust the area ratio of sub-pixel, and prevents that the aperture opening ratio of dot structure from descending.
For reaching above-mentioned or other purposes, the present invention proposes a kind of dot structure, is suitable for being arranged on the substrate, and this dot structure comprises sweep trace and data line, thin film transistor (TFT), main pixel electrode and at least one sub-pixel electrode.Sweep trace and data line are arranged on the substrate.Thin film transistor (TFT) is arranged on the substrate and with sweep trace and data line and electrically connects.Main pixel electrode drains by a contact window and with one of thin film transistor (TFT) and electrically connects.Sub-pixel electrode is positioned at the top of drain electrode, and drain electrode and sub-pixel electrode electrical couplings.
In an embodiment of the present invention, the above-mentioned peripheral region that is positioned at the drain electrode of sub-pixel electrode below around sub-pixel electrode.
In an embodiment of the present invention, the above-mentioned drain electrode that is positioned at the sub-pixel electrode below comprises a main part and an extension.Main part is arranged on the beneath and neighbor scanning line of sub-pixel electrode one side.The autonomous body of extension extends to main pixel electrode and electrically connects with main pixel electrode.
In an embodiment of the present invention, the area ratio of the area of above-mentioned main pixel electrode and sub-pixel electrode is between 1: 1～1: 2.
In an embodiment of the present invention, above-mentioned dot structure comprises main pixel electrode, first sub-pixel electrode and second sub-pixel electrode, and the area ratio of main pixel electrode, first sub-pixel electrode and second sub-pixel electrode is 1: 1: 2.
In an embodiment of the present invention, above-mentioned dot structure comprises main pixel electrode, first sub-pixel electrode, second sub-pixel electrode and the 3rd sub-pixel electrode, and the area ratio of main pixel electrode, first sub-pixel electrode, second sub-pixel electrode and the 3rd secondary image element is 1: 1: 1: 2.
In an embodiment of the present invention, above-mentioned dot structure also comprises altogether uses electrode, be arranged on the substrate, and common electrode and main pixel electrode and sub-pixel electrode electrical couplings.
In an embodiment of the present invention, above-mentioned dot structure also comprises one first alignment pattern, is disposed on main pixel electrode and the sub-pixel electrode.This first alignment pattern for example is orientation raised design or orientation slit pattern.
The present invention is because of adopting the pixel segmentation design, pixel is divided into sub-pixel (sub-pixel) more than two or three, and the drain electrode by thin film transistor (TFT) electrically connects with main pixel electrode and with sub-pixel electrode coupling, and then the ratio of adjustment coupling capacitance, memory capacitance and liquid crystal capacitance.So, make different sub-pixels have different pixel current potentials, and then can improve the problem of angle of squint colour cast.In addition, the design by the drain electrode shape can reach the effect of adjusting coupling capacitance easily, in addition, also can make the drain electrode of special shape replace the light shield layer that is positioned at colored optical filtering substrates, so that the display abnormality zone is covered.
For above-mentioned and other purposes, feature and advantage of the present invention can be become apparent, preferred embodiment cited below particularly, and conjunction with figs. is described in detail below.
Description of drawings
Fig. 1 is the diagrammatic cross-section of existing multi-zone vertical alignment nematic Thin Film Transistor-LCD.
Fig. 2 is for looking synoptic diagram on the colored optical filtering substrates of No. 2005/0030439, U.S. Pat.
Fig. 3 is for looking synoptic diagram on the thin-film transistor array base-plate of No. 2005/0030439, U.S. Pat.
Fig. 4 is for looking synoptic diagram on the dot structure of first embodiment of the invention.
Fig. 5 is for looking synoptic diagram on the dot structure of second embodiment of the invention.
Fig. 6 is for looking synoptic diagram on the dot structure of third embodiment of the invention.
Fig. 7 is for looking synoptic diagram on the dot structure of fourth embodiment of the invention.
Fig. 8 is the schematic equivalent circuit of the dot structure of preferred embodiment of the present invention.
Fig. 9 A be fifth embodiment of the invention dot structure on look synoptic diagram.
Fig. 9 B is the schematic equivalent circuit of the dot structure of Fig. 9 A.
Figure 10 is for looking synoptic diagram on the dot structure of sixth embodiment of the invention.
Figure 11 is the schematic perspective view of the display panels of preferred embodiment of the present invention.
Embodiment
Fig. 4 is for looking synoptic diagram on the dot structure of first embodiment of the invention.Please refer to Fig. 4, this dot structure 400 is suitable for being arranged on the substrate 300.This dot structure 400 comprises sweep trace 410 and data line 420, thin film transistor (TFT) 430, main pixel electrode 440 and at least one sub-pixel electrode 450 (only illustrating 1 among the figure).Sweep trace 410 is arranged on the substrate 300 with data line 420.Thin film transistor (TFT) 430 is arranged on the substrate 300 and with sweep trace 410 and data line 420 and electrically connects.Main pixel electrode 440 electrically connects with a drain electrode 432 of thin film transistor (TFT) 430 by a contact window 480.Sub-pixel electrode 450 is positioned at drain electrode 432 top, and drain 432 with sub-pixel electrode 450 electrical couplings.
Please refer to Fig. 4, dot structure 400 can also comprise uses electrode 470 altogether, and this common electrode 470 is arranged on the substrate 300, and common electrode 470 and main pixel electrode 440 and sub-pixel electrode 450 electrical couplings.Therefore, form holding capacitor between common electrode 470 and main pixel electrode 440 and the sub-pixel electrode 450, and make the voltage that is applied on main pixel electrode 440 and the sub-pixel electrode 450 can keep one long period.
In addition, dot structure 400 also can also comprise first alignment pattern 460, is disposed on main pixel electrode 440 and the sub-pixel electrode 450.This first alignment pattern 460 for example is orientation raised design or orientation slit pattern.By the setting of alignment pattern 460, can make display panels produce wide-visual angle effect with this dot structure 400.
Moreover thin film transistor (TFT) 430 is formed on the sweep trace 410, and all with the some of sweep trace 410 as its grid.This thin film transistor (TFT) 430 comprises grid (being the some of sweep trace 410), drain electrode 432, source electrode 434 and channel layer 436.About the detailed construction of thin film transistor (TFT) 430, well known skill person should understand and can carry out suitable variation, will not given unnecessary details at this.
Please continue with reference to Fig. 4, dot structure 400 has main pixel electrode 440 and sub-pixel electrode 450, and has 4 areal distribution (4 domain) respectively.Can produce electrical couplings between the drain electrode 432 of thin film transistor (TFT) 430 and the sub-pixel electrode 450, and drain and 432 electrically connect with main pixel electrode 440 by contact window 480.Therefore, when supplying with identical data voltage, in the zone of the zone of main pixel electrode 440 and sub-pixel electrode 450, will form different Electric Field Distribution via data line 420.That is the liquid crystal molecule that is arranged in the liquid crystal molecule (not illustrating) in the zone of main pixel electrode 440 and is arranged in sub-pixel electrode 450 zones can further produce different toppling directions, and obtains the effect of 8 areal distribution (8 domain).
Hold above-mentioned, in, during the display frame of low GTG, the zone of sub-pixel electrode 450 is darker, and when the display frame of high gray, main pixel electrode 440 is close with the regional briliancy of sub-pixel electrode 450.Consequently, can improve the image color offset phenomenon that when bigger angle of squint direction is watched image, is produced.
It should be noted that in the dot structure 400 that illustrates at Fig. 4, be positioned at the peripheral region of the drain electrode 432 of sub-pixel electrode 450 belows around sub-pixel electrode 450.Therefore, this drains and 432 desirablely subrogates light shield layer (not illustrating) in colored optical filtering substrates (not illustrating) side so that the display abnormality zone is covered.And in addition, this has the drain electrode 432 of shade function to reach making in thin film transistor (TFT) 430 processing procedures, also can avoid when upright colored optical filtering substrates (not illustrating) of group and substrate 300 because of producing the demonstration inequality problem that is caused that is offset.
Fig. 5 illustrates to looking synoptic diagram on the dot structure of second embodiment of the invention.Please refer to Fig. 5, this dot structure 402 is similar with the dot structure 400 that Fig. 4 is illustrated, and identical member indicates with identical label, and similarly member is not repeated at this as above-mentioned.It should be noted that among Fig. 5 that main pixel electrode 440 is inequality with the area of sub-pixel electrode 450.
Hold above-mentionedly,, can more preferably improve the situation of image colour cast by adjusting the area ratio of main pixel electrode 440 and secondary image element 450.Particularly, in one embodiment, as the dot structure 400,402 that Fig. 4 and Fig. 5 illustrated, the area ratio of the area of its main pixel electrode 440 and sub-pixel electrode 450 is between 1: 1～1: 2.In addition, main pixel electrode 440 is the both sides that independently and respectively are arranged at common electrode 470 separately with sub-pixel electrode 450.Therefore, with respect to as existing dot structure (illustrating) as Fig. 2, the present invention can utilize the mode of the position of adjusting common electrode 470 easily, and then adjusts the area ratio of main pixel electrode 440 and sub-pixel electrode 450.
Fig. 6 is for looking synoptic diagram on the dot structure of third embodiment of the invention.Please refer to Fig. 6, this dot structure 404 is similar with the dot structure 400 that Fig. 4 is illustrated, and identical member indicates with identical label, and is not repeated.
It should be noted that in this embodiment the drain electrode 432 that is positioned at sub-pixel electrode 450 belows comprises a main part 432a and an extension 432b.Main part 432a is arranged under sub-pixel electrode 450 1 sides and neighbor scanning line 410.The autonomous body 432a of extension 432b extends to main pixel electrode 440 and electrically connects with main pixel electrode 440.
Similarly, produce electrical couplings between the drain electrode 432 of thin film transistor (TFT) 430 and the sub-pixel electrode 450, and 432 the extension 432b of draining electrically connects by contact window 480 and with main pixel electrode 440.Therefore, when supplying with identical data voltage, in the zone of the zone of main pixel electrode 440 and sub-pixel electrode 450, will form different Electric Field Distribution, improve the situation of image colour cast by this via data line 420.
It should be noted that drain electrode 432 has main part 432a and extension 432b, so can pass through to change the area of main part 432a easily to adjust coupling capacitance.And,, also can prevent the situation of areal distribution inequality (uneven domain) by the suitable design of extension 432b.Moreover drain electrode 432 also can avoid situation of short circuit to take place because away from data line 420 in this design.
Fig. 7 is for looking synoptic diagram on the dot structure of fourth embodiment of the invention.This dot structure 406 is similar with the dot structure 404 that Fig. 6 is illustrated, and identical member indicates with identical label, and similarly member is not repeated at this as above-mentioned.It should be noted that among Fig. 7 that main pixel electrode 440 is inequality with the area of sub-pixel electrode 450.In one embodiment, as the area ratio of the area of the main pixel electrode 440 of the dot structure 404,406 that Fig. 6 and Fig. 7 illustrated and sub-pixel electrode 450 between 1: 1～1: 2.By this, can more preferably improve the image colour cast situation of dot structure 404,406.
Yet, in the above-mentioned dot structure 400,402,404,406, all be that situation with a main pixel electrode 440 and a sub-pixel electrode 450 describes as embodiment, in fact dot structure of the present invention is not limited to have only a sub-pixel electrode 450, and can have a plurality of sub-pixel electrode 450.
Fig. 8 is the schematic equivalent circuit of the dot structure of preferred embodiment of the present invention.Please refer to Fig. 8, this dot structure 500 adopts the pixel segmentation design, pixel is divided into sub-pixel (sub-pixel) more than three, and by adjusting the ratio of coupling capacitance, memory capacitance and liquid crystal capacitance, make different sub-pixels have different pixel current potentials, to improve the problem of angle of squint colour cast.
Please be simultaneously with reference to Fig. 7 and Fig. 8, on behalf of m bar sweep trace, G (m+1), G (m) represent m+1 bar sweep trace, S (n) to represent n bar data line, S (n+1) to represent n+1 bar data line.The data voltage that the VaO representative is applied, VaN represents the pixel voltage of N sub-pixel, and wherein N is a positive integer.Cst0, Clc0 can be considered as the memory capacitance and the liquid crystal capacitance of main pixel electrode 440 respectively.Cst1, Clc1, Ccp1 represent memory capacitance, liquid crystal capacitance and the coupling capacitance of the 1st sub-pixel electrode 450 respectively.CstN, ClcN, CcpN represent memory capacitance, liquid crystal capacitance and the coupling capacitance of N sub-pixel electrode 450 respectively.Wherein, the pixel current potential of N sub-pixel electrode can meet following formula (1).
Dot structure in the time of below will going on to say N=2 (promptly having three sub-pixels) and N=3 (promptly having four sub-pixels).
Fig. 9 A be fifth embodiment of the invention dot structure on look synoptic diagram.Fig. 9 B is the schematic equivalent circuit of the dot structure of Fig. 9 A.Please be simultaneously with reference to Fig. 9 A and Fig. 9 B, present embodiment is the situation of N=2, and this dot structure 502 and above-mentioned described dot structure 400,402,404,406,500 are similar, and identical member indicates and is not repeated with identical symbol.
It should be noted that, this dot structure 502 comprises main pixel electrode 440, the first sub-pixel electrode 450a and the second sub-pixel electrode 450b, and the area ratio of main pixel electrode 440, the first sub-pixel electrode 450a and the second sub-pixel electrode 450b is 1: 1: 2.
And, by among Fig. 9 A and Fig. 9 B as can be known, this dot structure 502 is divided into three sub-pixels, wherein, main pixel electrode 440 has memory capacitance Cst0, liquid crystal capacitance Clc0; The first sub-pixel electrode 450a has memory capacitance Cst1, liquid crystal capacitance Clc1 and coupling capacitance Ccp1; The second sub-pixel electrode 450b has memory capacitance Cst2, liquid crystal capacitance Clc2 and coupling capacitance Ccp2.
Referring again to Fig. 9 A, utilize drain electrode 432 to connect main pixel electrode 440 through contact window 480, and, the below that drain electrode 432 is positioned at the first sub-pixel electrode 450a and the second sub-pixel electrode 450b is with as coupling electrode, therefore, this dot structure 502 does not need the electrode of design coupling usefulness in addition again, and then can strengthen the aperture opening ratio of dot structure 502.
Figure 10 is for looking synoptic diagram on the dot structure of sixth embodiment of the invention.Please refer to Figure 10, present embodiment is the situation of N=3, and this dot structure 504 and above-mentioned described dot structure 400,402,404,406,500,502 are similar, and identical member indicates and do not repeated with identical symbol.
It should be noted that, this dot structure 504 comprises main pixel electrode 440, the first sub-pixel electrode 450a, the second sub-pixel electrode 450b and the 3rd sub-pixel electrode 450c, and the area ratio of main pixel electrode 440, the first sub-pixel electrode 450a, the second sub-pixel electrode 450b and the 3rd sub-pixel electrode 450c is 1: 1: 1: 2.
And as shown in Figure 10, this dot structure 504 is divided into four sub-pixels, and wherein, main pixel electrode 440 has memory capacitance Cst0, liquid crystal capacitance Clc0; The first sub-pixel electrode 450a has memory capacitance Cst1, liquid crystal capacitance Clc1 and coupling capacitance Ccp1; The second sub-pixel electrode 450b has memory capacitance Cst2, liquid crystal capacitance Clc2 and coupling capacitance Ccp2; The 3rd sub-pixel electrode 450c has memory capacitance Cst3, liquid crystal capacitance Clc3 and coupling capacitance Ccp3.That is to say, dot structure is divided into many more sub-pixels, the effect of its image color bias improvement will be better.
In sum, dot structure is divided into a plurality of sub-pixels (comprising main pixel and secondary image element), the main pixel wherein and the drain electrode of thin film transistor (TFT) electrically connect, the drain electrode electrical couplings of secondary image element and thin film transistor (TFT).Therefore, when identical data voltage was provided, each sub-pixel had utilized different Ccp ratios and will have different pixel voltages, and then uses the situation of improving the image colour cast.
Figure 11 is the schematic perspective view of the display panels of preferred embodiment of the present invention.Please refer to Figure 11, this display panels 800 comprises thin-film transistor array base-plate 810, colored optical filtering substrates 820 and liquid crystal layer 830.Thin-film transistor array base-plate 810 has a plurality of dot structures (not illustrating), and this dot structure for example is any in the above-mentioned dot structure 400,402,404,406,500,502,504, is not limited at this.In addition, about the detailed construction of dot structure as mentioned above, so do not repeated at this.Colored optical filtering substrates 820 is disposed at the subtend of thin-film transistor array base-plate 810.Liquid crystal layer 830 is disposed between thin-film transistor array base-plate 810 and the colored optical filtering substrates 820.
This display panels 800 is because of having above-mentioned dot structure, thus when the user when the stravismus direction is observed, this display panels 800 can improve color offset phenomenon effectively.
In addition, display panels 800 also comprises one second alignment pattern (not illustrating), is disposed on the colored optical filtering substrates 820.This second alignment pattern for example is orientation raised design or orientation slit pattern.Be arranged at first alignment pattern 460 (with reference to Fig. 4) on the thin-film transistor array base-plate 810 by second alignment pattern collocation, can reach better effect of wide angle.Certainly, the present invention does not limit the set-up mode and the shape of orientation raised design and orientation slit pattern, and it can be the structure of multi-zone vertical alignment nematic, or other kinds variation.
In sum, dot structure of the present invention and display panels have the following advantages:
(1) drain electrode by thin film transistor (TFT) is coupled with the electric connection of main pixel electrode and with sub-pixel electrode, and then the ratio of adjustment coupling capacitance, memory capacitance and liquid crystal capacitance, make different sub-pixels have different pixel current potentials, to improve the problem of angle of squint colour cast.
(2) pixel design can be become the sub-pixel (sub-pixel) have more than three, and then more preferably improve the problem of image colour cast.
(3) dot structure is easy to adjust the area ratio of main pixel electrode and sub-pixel electrode and the margin that promotes pixel design, and can more preferably improve the image color offset phenomenon.
(4) by the shaped design of drain electrode, and can adjust coupling capacitance easily, and avoid draining and data line between produce the phenomenon of short circuit.Moreover, make the also desirable light shield layer of subrogating of drain electrode of special shape, so that the display abnormality zone is covered in colored optical filtering substrates.
Though the present invention discloses as above with preferred embodiment; right its is not in order to limiting the present invention, anyly has the knack of this skill person, without departing from the spirit and scope of the present invention; when can doing a little change and retouching, so protection scope of the present invention is when with being as the criterion that claim was defined.
Claims (9)
1. a dot structure is suitable for being arranged on the substrate, and this dot structure comprises:
An one scan line and a data line are arranged on this substrate;
One thin film transistor (TFT) is arranged on this substrate and electrically connects with this sweep trace and this data line;
One main pixel electrode, the drain electrode by a contact window with this thin film transistor (TFT) electrically connects; And
At least one sub-pixel electrode is positioned at the top of this drain electrode, and should drain electrode and this sub-pixel electrode electrical couplings.
2. dot structure as claimed in claim 1 is characterized in that, is positioned at the peripheral region of this drain electrode of this sub-pixel electrode below around this sub-pixel electrode.
3. dot structure as claimed in claim 1 is characterized in that, this drain electrode that is positioned at this sub-pixel electrode below comprises:
One main part is arranged on the beneath of this sub-pixel electrode one side and contiguous this sweep trace; And
One extension, this main part extends to this main pixel electrode and electrically connects with this main pixel electrode certainly.
4. dot structure as claimed in claim 1 is characterized in that, the area of this main pixel electrode and the area ratio of this sub-pixel electrode are between 1: 1～1: 2.
5. dot structure as claimed in claim 1, it is characterized in that, this dot structure comprises this main pixel electrode, one first sub-pixel electrode and one second sub-pixel electrode, and the area ratio of this main pixel electrode, this first sub-pixel electrode and this second sub-pixel electrode is 1: 1: 2.
6. dot structure as claimed in claim 1, it is characterized in that, this dot structure comprises this main pixel electrode, one first sub-pixel electrode, one second sub-pixel electrode and one the 3rd sub-pixel electrode, and the area ratio of this main pixel electrode, this first sub-pixel electrode, this second sub-pixel electrode and the 3rd sub-pixel electrode is 1: 1: 1: 2.
7. dot structure as claimed in claim 1 is characterized in that, also comprises altogether and uses electrode, be arranged on this substrate, and this common electrode and this main pixel electrode and this sub-pixel electrode electrical couplings.
8. dot structure as claimed in claim 1 is characterized in that, also comprises one first alignment pattern, is disposed on this main pixel electrode and this sub-pixel electrode.
9. dot structure as claimed in claim 8 is characterized in that, this first alignment pattern comprises orientation raised design or orientation slit pattern.
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| CNA2007100063710A CN101236337A (en) | 2007-02-01 | 2007-02-01 | Pixel structure |
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| CNA2007100063710A CN101236337A (en) | 2007-02-01 | 2007-02-01 | Pixel structure |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102109723A (en) * | 2010-12-07 | 2011-06-29 | 友达光电股份有限公司 | Pixel structure |
| CN101726954B (en) * | 2009-12-21 | 2011-11-16 | 友达光电股份有限公司 | Pixel structure |
| CN102707518A (en) * | 2012-05-24 | 2012-10-03 | 深圳市华星光电技术有限公司 | Liquid crystal display panel and display device thereof |
| CN107153309A (en) * | 2017-07-18 | 2017-09-12 | 深圳市华星光电技术有限公司 | Array base palte, liquid crystal panel and display device |
| CN107577100A (en) * | 2017-10-10 | 2018-01-12 | 厦门天马微电子有限公司 | Array base palte, display panel and display device |
-
2007
- 2007-02-01 CN CNA2007100063710A patent/CN101236337A/en active Pending
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101726954B (en) * | 2009-12-21 | 2011-11-16 | 友达光电股份有限公司 | Pixel structure |
| CN102109723A (en) * | 2010-12-07 | 2011-06-29 | 友达光电股份有限公司 | Pixel structure |
| CN102109723B (en) * | 2010-12-07 | 2012-08-29 | 友达光电股份有限公司 | Pixel structure for display panel |
| CN102707518A (en) * | 2012-05-24 | 2012-10-03 | 深圳市华星光电技术有限公司 | Liquid crystal display panel and display device thereof |
| WO2013174011A1 (en) * | 2012-05-24 | 2013-11-28 | 深圳市华星光电技术有限公司 | Liquid crystal display panel and display device employing same |
| CN107153309A (en) * | 2017-07-18 | 2017-09-12 | 深圳市华星光电技术有限公司 | Array base palte, liquid crystal panel and display device |
| CN107577100A (en) * | 2017-10-10 | 2018-01-12 | 厦门天马微电子有限公司 | Array base palte, display panel and display device |
| CN107577100B (en) * | 2017-10-10 | 2020-06-19 | 厦门天马微电子有限公司 | Array substrate, display panel and display device |
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