CN101232239B - Boosted circuit - Google Patents
Boosted circuit Download PDFInfo
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- CN101232239B CN101232239B CN2008101011493A CN200810101149A CN101232239B CN 101232239 B CN101232239 B CN 101232239B CN 2008101011493 A CN2008101011493 A CN 2008101011493A CN 200810101149 A CN200810101149 A CN 200810101149A CN 101232239 B CN101232239 B CN 101232239B
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Abstract
The invention discloses a voltage booster circuit, the development cost and the maintenance cost of which are lower. The voltage booster circuit comprises a switch, and further has a signal generatingcircuit, wherein the signal generating circuit outputs a pulse signal to control the opening and the closing of the switch. The invention is widely applied to consumption electronic products.
Description
Technical field
The present invention relates to a kind of booster circuit, relate in particular to the booster circuit that a kind of inside provides control signal.
Background technology
In many consumer electronics product designs, the power supply design is the difficult point of design often, and efficient, stable, power source design design reliably is pursuing one's goal of technical staff and scientific research personnel always.Along with the fierceness day by day of consumer electronics product competition, the power supply design that the cost low performance is good is subjected to the favor of manufacturer day by day.
Booster circuit mainly contains two kinds of solutions at present as the power supply of consumer electronics product, and first kind is to adopt special-purpose booster circuit chip, and second kind is to build special-purpose booster circuit according to concrete applications exploiting capacitance-resistance and transistor.The booster circuit performance that special chip provides is good, but most of special chip cost is higher, has limited application to a certain extent.Because it is less that special-purpose booster circuit chip is used in actual use, second kind of scheme uses according to concrete that to build special-purpose booster circuit more and more widely in the field of business.Utilizing capacitance-resistance and transistor to build special-purpose booster circuit has at present had multiple implementation, but changes ten thousand times without leaving the original aim or stand, and the main circuit basic boom as shown in Figure 1.
Circuit mainly comprises energy storage inductor L among the figure, switch S, sustained diode, critical components such as filter capacitor C and load resistance R, wherein after the anodal series connection accumulation inductance L and sustained diode of Shu Ru DC power supply voltage Vi, filter capacitor C in parallel again and load resistance R, wherein the positive pole of sustained diode meets energy storage inductor L, and negative pole meets filter capacitor C and load resistance R.The output voltage V o of booster circuit draws at the two ends of load resistance R, and the end that load resistance R connects the sustained diode negative pole is the positive pole of output voltage V o, and the other end is the negative pole of output voltage V o.The closed and disconnected of PWM (PulseWidth Modulation, pulse width modulation) pulse signal control switch S, energy storage inductor L finish energy storage and energy discharges, and filter capacitor C finishes filtering and energy storage effect.
When pwm pulse signal control switch S was closed, energy storage inductor L, switch S and power supply Vi formed the closed-loop path, energy storage inductor L energy storage, and sustained diode is oppositely turn-offed, and load resistance R is powered by filter capacitor C.When pwm pulse signal control switch S disconnects, the sustained diode conducting, energy storage inductor L releases energy, and gives filter capacitor C charging energy storage simultaneously.So repeatedly, form the entire work process of booster circuit.
No matter be the soft switch or the booster circuit of hard switching, major part all needs the outside to provide the pwm pulse shown in the figure to come the closed and disconnected of control switch S.Because the pulse frequency and the duty ratio that need are variable, a kind of way relatively more commonly used is to adopt MCU (Micro Controller Unit, microcontroller) GPIO (General Purpose Input/Output, general input and output) simulation output, or provide pwm pulse by the dedicated PWM pulse module, increased system development amount and maintenance cost so to a certain extent.
In sum, be necessary to provide the booster circuit of a kind of low development cost and maintenance cost.
Summary of the invention
Technical problem to be solved by this invention is to be a kind of booster circuit need be provided, and development cost and maintenance cost are all lower, and increases substantially the multiple that boosts of booster circuit.
In order to solve the problems of the technologies described above, the invention provides a kind of booster circuit, comprise switch, also comprise signal generating circuit, fly-wheel diode, filter capacitor and secondary booster circuit,, described signal generating circuit output pulse signal is controlled described switch closure or disconnection, and the positive pole of described fly-wheel diode inserts the switching signal of described switch output, negative pole connects described secondary booster circuit, and the described secondary booster circuit other end is through described filter capacitor ground connection; Described secondary booster circuit is formed in parallel by secondary energy storage boost inductance and secondary energy storage boost capacitor.
Further, described booster circuit may further include voltage stabilizing didoe, and described voltage stabilizing didoe plus earth is connected in parallel on described filter capacitor two ends.
Further, described booster circuit can further include buffer circuit, and described buffer circuit is connected in parallel on described fly-wheel diode two ends, cushions the voltage at described fly-wheel diode two ends; Wherein, described buffer circuit can be in series by buffer capacitor and discharge resistance.
Aforesaid booster circuit, described switch can comprise N type isolated gate FET, and described pulse signal is input to the grid of described isolated gate FET, the source ground of described isolated gate FET, drain electrode output switching signal; Described booster circuit may further include noise suppressed electric capacity, and described noise suppressed electric capacity two ends connect the source electrode and the drain electrode of described isolated gate FET respectively; Further, described signal generating circuit can comprise sine wave generating circuit or square wave generation circuit.
Compared with prior art, the present invention has substituted the control impuls of external PWM signal as switch with signal generating circuit, has reduced development cost and maintenance cost, has made things convenient for design and use; Select for use metal-oxide-semiconductor to substitute triode, reduced the stray inductance and the electric capacity of circuit, reduced power consumption, and between the source of metal-oxide-semiconductor, drain electrode, insert noise suppressed electric capacity, reduced noise and electromagnetic compatibility noise between metal-oxide-semiconductor source, the drain electrode as switching tube; Adopt the secondary booster circuit, increased substantially the multiple that boosts of booster circuit; At fly-wheel diode two ends parallel connection buffer circuit, reduced of the transient overshoot influence of booster circuit stray inductance to fly-wheel diode; Also introduce the Schottky voltage stabilizing didoe, improved the stability of booster circuit output signal.
Description of drawings
Fig. 1 is the principle schematic of booster circuit in the prior art.
Fig. 2 is a principle of the invention schematic diagram.
Fig. 3 is the electrical block diagram of a kind of signal generating circuit embodiment.
Fig. 4 is the electrical block diagram of first embodiment of the invention.
Fig. 5 is the electrical block diagram of second embodiment of the invention.
Fig. 6 is the electrical block diagram of third embodiment of the invention.
Fig. 7 is the electrical block diagram of fourth embodiment of the invention.
Embodiment
Describe embodiments of the present invention in detail below with reference to drawings and Examples, how the application technology means solve technical problem to the present invention whereby, and the implementation procedure of reaching technique effect can fully understand and implements according to this.
Because the harmonic component that is comprised in the outside pwm pulse signal that provides, can finally be coupled in the circuitry, bring complete machine very big noise jamming, therefore basic thought of the present invention is integrated low-cost signal generating circuit, provide outside pwm pulse to substitute, only need provide input voltage in actual applications, output just will obtain the desirable value of boosting, reduce the circuit development cost, greatly make things convenient for the design and use needs.
Fig. 2 shows principle of the invention schematic diagram, compare with existing booster circuit in the prior art, the present invention introduces a signal generating circuit in booster circuit, and the pulse signal that produces by this signal generating circuit comes the closed or disconnection of control switch S, thereby realizes the existing function of booster circuit.Energy storage inductor L among Fig. 2, switch S, sustained diode, the function and the type of action of critical components such as filter capacitor C and load resistance R, all identical with each parts role in the existing booster circuit principle signal shown in Figure 1, be not described in detail herein.
Fig. 3 shows a kind of implementation of signal generating circuit, and the generation pulse signal comes the unlatching of control switch pipe and ends.As shown in Figure 3, second resistance R 2, the 3rd resistance R 3, the 4th resistance R 4, the 5th resistance R 5 are all received the positive pole of input power supply Vi.Wherein the other end of the 4th resistance R 4 connects the collector electrode of NPN type triode Q1 (being referred to as the first triode Q1), and the other end of the 5th resistance R 5 connects the base stage of the first triode Q1; The other end of second resistance R 2 connects the collector electrode of NPN type triode Q2 (being referred to as the second triode Q2), and the other end of the 3rd resistance R 3 connects the base stage of the second triode Q2.The emitter of the first triode Q1 and the second triode Q2, all ground connection (GND) behind the negative pole of connection input power supply Vi.Between the collector electrode of the base stage of the first triode Q1 and the second triode Q2, also be connected with the second coupling capacitance C2, between first base stage triode Q1 collector electrode and the second triode Q2, also be connected with the 3rd coupling capacitance C3.The second coupling capacitance C2 and the 3rd coupling capacitance C3 provide the AC coupled function.
Signal generating circuit shown in Figure 3 contains the first triode Q1 and the second triode Q2, and each triode provides 180 degree phase shifts, and two triodes just can provide 360 degree phase shifts, form positive feedback loop.Second resistance R 2, the 3rd resistance R 3, the 4th resistance R 4, the 5th resistance R 5 also constitute the positive feedback loop of two triodes except that the quiescent point that two triodes are provided.Specifically, second resistance R 2 and 3 series connection of the 3rd resistance R constitute the positive feedback loop of the second triode Q2, and the 4th resistance R 4 and 5 series connection of the 5th resistance R constitute the positive feedback loop of the first triode Q1.By the size of choose reasonable the 3rd resistance R 3 and the 5th resistance R 5, and the second coupling capacitance C2 and the 3rd coupling capacitance C3 size, can obtain the vibration square wave frequency that needs, its square wave frequency is f=0.7 * (R5 * C2+R3 * C3).
Signal generating circuit shown in Figure 3, its course of work be, when input power supply Vi powered on, input power supply Vi was loaded into circuit, because two triodes all are in forward bias, the former capital is in conducting state.In addition, input power supply Vi also is that the 3rd coupling capacitance C3 and the second coupling capacitance C2 are charged to the state of importing power supply Vi voltage no better than, charge path is to pass through earth point, arrive transistor base again, again by getting back to input power supply Vi behind the electric capacity, some charging current is by the 3rd resistance R 3 and the 5th resistance R 5, thereby causes positive voltage to be added on the base stage, make the transistor electric conduction quantity bigger, thereby the collector voltage of two triodes is descended.Two transistors can not be duplicate, even the transistor of same model and identical parameter value, a transistor also can be bigger a little than another transistorized electric conduction quantity when initial.The electric conduction quantity of supposing the second triode Q2 is bigger, because the electric weight of the second triode Q2 is bigger, the second triode Q2 collector voltage descends and will descend faster than the first triode Q1, the result is coupled to the voltage of the first triode Q1 base stage by the second coupling capacitance C2 of the 5th resistance R 5 discharges, the voltage negative value that will be coupled to the second triode Q2 base stage than the 3rd coupling capacitance C3 by the R3 discharge is bigger, this just makes the electric conduction quantity of the triode Q1 that wins reduce, and its collector voltage has then raise.It is the base stage that is coupled to the second triode Q2 as positive voltage by the second coupling capacitance C2 that the first triode Q1 voltage raises, and such second triode Q2 conduction is more, causes the second triode Q2 collector voltage further to descend.Because the second coupling capacitance C2 is also in discharge, so order about the first triode Q1 base voltage to negative increase, this process proceeds to the first triode Q1 and ends, and the second triode Q2 is under saturation condition till the conducting, this moment, the second coupling capacitance C2 continued to discharge over the ground by the 5th resistance R 5, the first triode Q1 remain off surpasses cut-ff voltage until the base voltage of the first triode Q1, and such first triode Q1 begins conducting, has begun second half cycle of oscillator.
Because the first triode Q1 conducting, its collector voltage begins to descend, cause the 3rd coupling capacitance C3 to begin discharge by the 3rd resistance R 3, be loaded into the negative voltage that is of the second triode Q2 base stage like this, therefore the conduction current of the second triode Q2 reduces, and cause that the second triode Q2 collector voltage begins to raise, the base stage of the first triode Q1 is coupled in the output of the second triode Q2 again as positive voltage, therefore, the electric current of first triode Q1 conduction is bigger, as preceding half cycle work, plays positive feedback effect, and proceed to the second triode Q2 and end, the second triode Q2 is under saturation condition till the conducting.The first triode Q1 remain off state, until the abundant discharge off of the 3rd coupling capacitance C3, the second triode Q2 begins to break away from cut-off state, and at this moment, begin new cycle of oscillation once more.
The pulse signal Out that signal generating circuit embodiment is as shown in Figure 3 produced is a square wave, draws from the collector electrode of the first triode Q1, is input on the switch in the booster circuit of the present invention.In fact, the signal that signal generating circuit is exported among the present invention is not limited to square wave, also can be sinusoidal wave except square wave, but no matter be the output signal of which kind of waveform, all need to satisfy energy normally closed or cut-off switch, also promptly if square wave, then the minimum levels of square wave is taken as zero level, and maximum level will enough be opened switch S, if sinusoidal wave, then Zheng Xianbo trough is taken as zero level, and the crest amplitude will enough be opened switch S.
Signal generating circuit of the present invention, except embodiment shown in Figure 3, also can be other pulse signal generation circuits, as long as function is to produce the closed and disconnected that pulse signal is controlled switch in the booster circuit, so realize the circuit structure of this function other multiple modes can also be arranged, as sine-wave oscillator, LC oscillator, RC oscillator or the like.
Signal generating circuit embodiment shown in Figure 3, the device that adopts is fewer, can adjust the frequency of pulse signal Out by adjusting resistance and electric capacity, can adjust the amplitude of pulse signal Out by the size of adjusting input voltage Vi, and stable work in work.
The outside of using provides pwm pulse signal at present, except first-harmonic, also comprise abundant harmonic component, these harmonic components will be coupled in the booster circuit, finally can be coupled in complete machine (as set-top box etc.) circuit, this also can bring very big noise jamming to complete machine, equally also can reduce properties of product.In the present embodiment, provide pwm pulse signal to come control switch the outside, change booster circuit inside into Signal-controlled switch is provided, efficiently solve the noise jamming that outside pwm pulse signal brings, improved properties of product.
Based on signal generating circuit shown in Figure 3, Fig. 4 shows the circuit structure of first embodiment of the invention, the pulse signal Out of signal generating circuit output, affact on the NPN type switch triode Q0 base stage as boost circuit switch, the grounded emitter of switch triode Q0, the collector electrode output switching signal is to the positive pole of sustained diode 1.Energy storage inductor L1 among first embodiment shown in Figure 4, sustained diode 1, parts roles in first embodiment of the invention such as filter capacitor C5 and load resistance RL, identical with each parts role in the principle of the invention signal shown in Figure 2 respectively, be not described in detail herein.
First embodiment shown in Figure 4, owing to introduced signal generating circuit shown in Figure 3, with relying on the outside pwm pulse signal that provides to provide signal to realize that the voltage lifting changes the inner output pulse signal of booster circuit into and realizes that voltage promotes in the prior art, reduced system development costs, maintain easily.
Among first embodiment shown in Figure 4, what switch was selected for use is triode.The structure of booster circuit and function make the triode that is used as boost circuit switch certainly lead to bigger stray inductance and parasitic capacitance.The present invention further splits to close and improves on the first embodiment basis shown in Figure 4.As shown in Figure 5, select the switch of N type metal-oxide-semiconductor (isolated gate FET) M1 for use as second embodiment of the invention.Certainly,, select the booster circuit of the signal generating circuit of other structures for use, can select for use metal-oxide-semiconductor equally as switch based on principle of the invention signal shown in Figure 2.The pulse signal Out of signal generating circuit output is input to the grid of switch MOS pipe M1, the source electrode of switch MOS pipe M1 and substrate ground connection, drain electrode is connected between energy storage inductor L1 and the sustained diode 1, directly affacts the positive pole of sustained diode 1 from the switching signal of drain electrode output.
Because the characteristic of metal-oxide-semiconductor itself replaces triode with metal-oxide-semiconductor, reduced because the influence that transistorized parasitic capacitance and stray inductance cause circuit.Simultaneously, because during switch MOS pipe M1 conducting, its grid current is minimum, current value is nA (receive peace) grade, has reduced the power consumption of whole booster circuit.
In addition, no matter be to adopt special-purpose booster circuit chip, still utilize capacitance-resistance and transistor to build special-purpose booster circuit, existing booster circuit all not too is fit to the application scenario of ask for something harshness, as set-top box, Digital Television etc.One of them reason is because switching noise is bigger, can greatly influence the device parameter index, as critical technical parameters such as sensitivity, signal to noise ratios.Find in the actual debug process that these parameters are very responsive to switching power supply noise,, greatly reduce properties of product and application power if processing is bad.
Present embodiment selects for use metal-oxide-semiconductor to replace the switch of triode as booster circuit, can produce certain noise between the source electrode of switch MOS pipe M1 and drain electrode.Select for use N type switch MOS pipe M1 as switching tube after, the second embodiment of the present invention further inserts a noise suppressed capacitor C 9 of avoiding voltage overshoot between the source of switch MOS pipe M1, drain electrode.The source of switch MOS pipe M1, leakage have an equivalent diode between the two ends, the frequent turn-on and turn-off of switching tube cause voltage overshoot easily, between the source of switch MOS pipe M1, drain electrode, insert noise suppressed capacitor C 9, can effectively avoid the generation of voltage overshoot between switch MOS pipe M1 source, the drain electrode.Noise suppressed capacitor C 9 can also effectively filter out the high-frequency noise that switching signal produces except can effectively avoiding the generation of voltage overshoot.Found through experiments, complete machine (as the set-top box etc.) sensitivity that 9 pairs of noise suppressed capacitor C are used second embodiment of the invention is greatly improved.In actual applications, noise suppressed capacitor C 9 generally can be selected the ceramic condenser of pF (pico farad) level for use.
Between the source of switch MOS pipe M1, drain electrode, insert noise suppressed capacitor C 9, not only can not have influence on the magnitude of voltage of output voltage, and suppressed noise between switch MOS pipe M1 source, the drain electrode, voltage build-up rate between minimizing source, the drain electrode, reduced EMC (Electro MagneticCompatibility, electromagnetic compatibility) noise.In addition, introduce noise suppressed capacitor C 9 and consider that from circuit cost cost is very little, the lifting of circuit performance is but very obvious.
The annexation and the working method of other components and parts among second embodiment shown in Figure 5, corresponding identical with first embodiment of the invention shown in Figure 4, no longer describe in detail herein.
Based on the booster circuit of basic structure shown in Figure 1, the stray inductance of the lead-in wire between the entire circuit device can exert an influence to the service behaviour of sustained diode 1.On the second embodiment basis shown in Figure 5, the present invention further improves sustained diode 1, introduces the buffer circuit of a fly-wheel diode.As shown in Figure 6, at the two ends of sustained diode 1, and link the series circuit of a buffer capacitor and discharge resistance, buffer capacitor C8 wherein preferably adopts ceramic condenser, and the appearance value is generally less than 10nF (nanofarad).Buffer capacitor C8 is mainly to 1 voltage cushioning effect of sustained diode, when sustained diode 1 is ended, the stray inductance of booster circuit is charged to buffer capacitor C8, because the appearance value of buffer capacitor C8 is bigger, so sustained diode 1 two ends can not produce transient overshoot voltage.When sustained diode 1 conducting, buffer capacitor C8 is by discharge resistance R7 discharge.Buffer circuit by buffer capacitor C8 and discharge resistance R7 form is used for protecting sustained diode 1, and the two mutual alignment relation of buffer capacitor C8 and discharge resistance R7 can not influence the function of buffer circuit.In the present embodiment, the buffer circuit of introducing has limited the lead-in wire stray inductance to the influence that switching signal produces, and has reduced the overshoot of switching signal waveform.
In fact; at the signal generating circuit of selecting external pwm pulse signal or other kinds for use; and select for use in the various booster circuits of triode as switch, can introduce buffer circuit for sustained diode 1, protection sustained diode 1 is avoided the damage of transient overshoot voltage.The annexation and the working method of other each components and parts among the 3rd embodiment shown in Figure 6, corresponding identical with each components and parts among second embodiment shown in Figure 5, be not described in detail herein.
In the boost application scenario of multiple of needs height, realize that directly voltage promotes, the normal capability defect that adopts increase switching tube frequency and pwm pulse signal duty recently to remedy booster circuit so that the booster circuit of basic structure shown in Figure 1 is difficult.At present existing booster circuit shown in Figure 1, on the principle of the invention perhaps shown in Figure 2 basis, can also adjust the scope of boosting of booster circuit, increase the multiple that boosts of booster circuit.
Based on the 3rd embodiment shown in Figure 6, the fourth embodiment of the present invention between the negative pole and filter capacitor C5 of sustained diode 1, is introduced the secondary booster circuit of being made up of secondary energy storage boost inductance L2 and secondary energy storage boost capacitor C6 as shown in Figure 7.Secondary energy storage boost inductance L2 and secondary energy storage boost capacitor C6 are connected in parallel between the negative pole and filter capacitor C5 of sustained diode 1, energy storage when secondary energy storage boost inductance L2 and secondary energy storage boost capacitor C6 turn-off at switch MOS pipe M1 releases energy by sustained diode 1, switch MOS pipe M1 and load resistance RL when switch MOS pipe M1 conducting.The secondary booster circuit of introducing, enlarged the scope of boosting of booster circuit, can satisfy the boost application scenario of multiple of high voltage, solve booster circuit commonly used in the prior art, improve the lower deficiency of the multiple that boosts by increasing switching tube frequency and pwm pulse signal duty ratio.
In the middle of fourth embodiment of the invention, when sustained diode 1 is ended, not only the stray inductance of booster circuit is charged to buffer capacitor C8, and secondary energy storage boost inductance L2 also charges to buffer capacitor C8, guaranteed that further sustained diode 1 two ends can not produce transient overshoot voltage.
The booster circuit of the basic structure that every employing is shown in Figure 1, if when practical application because failure and other reasons when causing booster circuit to lose efficacy, output voltage V o may exceed design load and cause circuit to damage.At present existing booster circuit shown in Figure 1, on the principle of the invention perhaps shown in Figure 2 basis, can introduce the stability that voltage stabilizing didoe improves booster circuit output voltage V o.
As shown in Figure 7; in the middle of the fourth embodiment of the invention; also further at load resistance RL two ends parallel connection one Schottky voltage stabilizing didoe D2; to improve the stability of output voltage V o; circuit is shielded; voltage stabilizing didoe D2 is in parallel with filter capacitor C5, and negative pole connects the tie point of filter capacitor C5 and secondary energy storage boost inductance L2, plus earth.After increasing voltage stabilizing didoe D2, if output voltage V o exceeds scope of design, then voltage stabilizing didoe D2 conducting, o is stabilized in the safe range with output voltage V.In the middle of first, second and the 3rd embodiment of the present invention, also can introduce voltage stabilizing didoe D2, be connected in parallel on the two ends of filter capacitor C5, negative pole connects the tie point of sustained diode 1 and filter capacitor C5, plus earth, role is the same with the effect in the middle of the 4th embodiment, is not described in detail herein.
In sum, all parts all can select for use transistor and capacitance resistance ware to form in the circuit of the present invention, adopt the special use chip cost that boosts much lower, can significantly reduce circuit BOM (Bill of Material, BOM) cost.Circuit of the present invention in actual applications, without any need for extraneous control operation, adopt inner signal generating circuit instead of external input pwm pulse signal, only need provide input voltage, just can obtain the ideal designs output valve, reduced development and maintenance cost, be beneficial to and improve design and practical efficient.The secondary booster circuit that is adopted in the circuit of the present invention has increased substantially the multiple that boosts of booster circuit, and the overall performance of booster circuit also is significantly improved, and is needing voltage height the boost occasion of multiple such as the tuner part of set-top box, and practicality is strong especially.Select for use metal-oxide-semiconductor as switch, reduced stray inductance and electric capacity, reduced circuit power consumption, promoted the circuit quality, and between the drain electrode of switch MOS pipe and source electrode, insert noise suppressed electric capacity, and effectively reduce the high-frequency noise of circuit, obviously promoted the performance index of whole booster circuit.In addition, the fly-wheel diode buffer circuit that the present invention introduces has reduced the transient overshoot influence of booster circuit stray inductance to fly-wheel diode; Also introduce the Schottky voltage stabilizing didoe, improved the stability of booster circuit output signal.The excellent part of the invention described above makes the present invention can be widely used in consumer electronics product.
Though the disclosed execution mode of the present invention as above, the execution mode that described content just adopts for the ease of understanding the present invention is not in order to limit the present invention.Technical staff in any the technical field of the invention; under the prerequisite that does not break away from the disclosed spirit and scope of the present invention; can do any modification and variation what implement in form and on the details; but scope of patent protection of the present invention still must be as the criterion with the scope that appending claims was defined.
Claims (7)
1. booster circuit, comprise switch, it is characterized in that, also comprise signal generating circuit, fly-wheel diode, filter capacitor and secondary booster circuit, described signal generating circuit output pulse signal is controlled described switch closure or disconnection, the positive pole of described fly-wheel diode inserts the switching signal of described switch output, and negative pole connects described secondary booster circuit, and the described secondary booster circuit other end is through described filter capacitor ground connection; Described secondary booster circuit is formed in parallel by secondary energy storage boost inductance and secondary energy storage boost capacitor.
2. booster circuit as claimed in claim 1 is characterized in that described booster circuit further comprises voltage stabilizing didoe, and described voltage stabilizing didoe plus earth is connected in parallel on described filter capacitor two ends.
3. booster circuit as claimed in claim 2 is characterized in that described booster circuit further comprises buffer circuit, and described buffer circuit is connected in parallel on described fly-wheel diode two ends, cushions the voltage at described fly-wheel diode two ends.
4. booster circuit as claimed in claim 3 is characterized in that described buffer circuit is in series by buffer capacitor and discharge resistance.
5. as the described booster circuit of each claim in the claim 1 to 4, it is characterized in that described switch comprises N type isolated gate FET, described pulse signal is input to the grid of described isolated gate FET, the source ground of described isolated gate FET, the drain electrode output switching signal.
6. booster circuit as claimed in claim 5 is characterized in that described booster circuit further comprises noise suppressed electric capacity, and described noise suppressed electric capacity two ends connect the source electrode and the drain electrode of described isolated gate FET respectively.
7. booster circuit as claimed in claim 6 is characterized in that, described signal generating circuit comprises sine wave generating circuit or square wave generation circuit.
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| CN2008101011493A CN101232239B (en) | 2008-02-28 | 2008-02-28 | Boosted circuit |
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| CN2008101011493A CN101232239B (en) | 2008-02-28 | 2008-02-28 | Boosted circuit |
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| CN101232239B true CN101232239B (en) | 2010-06-09 |
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| CN108011293A (en) * | 2017-12-16 | 2018-05-08 | 南京理工大学 | A kind of burst pulse infrared semiconductor laser radiating circuit |
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| CN102684617A (en) * | 2011-03-11 | 2012-09-19 | 中兴通讯股份有限公司 | Signal amplification circuit and method for improving output signal |
| CN102270960A (en) * | 2011-07-27 | 2011-12-07 | 重庆金美通信有限责任公司 | Singlechip-based DC brushed motor controller |
| TWI466407B (en) * | 2012-01-20 | 2014-12-21 | Ind Tech Res Inst | Energy recycle device |
| JP2014193072A (en) * | 2013-03-28 | 2014-10-06 | Nippon Dempa Kogyo Co Ltd | Step-up circuit and radiation measurement device |
| CN103346570A (en) * | 2013-06-07 | 2013-10-09 | 上海驹电电气科技有限公司 | Solar photovoltaic power generation dynamic voltage compensator with energy storage function |
| CN103475234A (en) * | 2013-09-11 | 2013-12-25 | 昆山新金福精密电子有限公司 | Boosting and voltage stabilizing circuit |
| CN109634446B (en) | 2017-04-07 | 2021-10-22 | 深圳市汇顶科技股份有限公司 | Active pen, booster circuit and control method thereof |
| CN110445208B (en) * | 2019-08-05 | 2023-03-24 | 维沃移动通信有限公司 | Charging circuit and terminal |
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| CN1551706A (en) * | 2003-05-07 | 2004-12-01 | 东芝照明技术株式会社 | Power supply device, discharge lamp igniting device and lighting device |
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