CN101232061A - Luminous source packaging - Google Patents
Luminous source packaging Download PDFInfo
- Publication number
- CN101232061A CN101232061A CNA2007100044207A CN200710004420A CN101232061A CN 101232061 A CN101232061 A CN 101232061A CN A2007100044207 A CNA2007100044207 A CN A2007100044207A CN 200710004420 A CN200710004420 A CN 200710004420A CN 101232061 A CN101232061 A CN 101232061A
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- Prior art keywords
- wafer
- transparent
- light emitting
- emitting source
- led wafer
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- 238000004806 packaging method and process Methods 0.000 title 1
- 239000007788 liquid Substances 0.000 claims abstract description 16
- 230000015572 biosynthetic process Effects 0.000 claims abstract description 8
- 238000009434 installation Methods 0.000 claims description 140
- 238000005538 encapsulation Methods 0.000 claims description 129
- 230000004308 accommodation Effects 0.000 claims description 72
- 238000001816 cooling Methods 0.000 claims description 45
- 239000000463 material Substances 0.000 claims description 38
- 230000009183 running Effects 0.000 claims description 20
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 18
- 239000000843 powder Substances 0.000 claims description 18
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 12
- 229910052751 metal Inorganic materials 0.000 claims description 11
- 239000002184 metal Substances 0.000 claims description 11
- 230000000694 effects Effects 0.000 claims description 10
- 239000011345 viscous material Substances 0.000 claims description 9
- 230000005284 excitation Effects 0.000 claims description 6
- 239000011248 coating agent Substances 0.000 claims description 5
- 238000000576 coating method Methods 0.000 claims description 5
- 239000004020 conductor Substances 0.000 claims description 5
- MRNHPUHPBOKKQT-UHFFFAOYSA-N indium;tin;hydrate Chemical compound O.[In].[Sn] MRNHPUHPBOKKQT-UHFFFAOYSA-N 0.000 claims description 5
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 claims description 5
- 235000007164 Oryza sativa Nutrition 0.000 claims description 4
- 230000005855 radiation Effects 0.000 claims description 4
- 235000009566 rice Nutrition 0.000 claims description 4
- 238000007789 sealing Methods 0.000 claims description 4
- 238000001465 metallisation Methods 0.000 claims description 3
- 239000004065 semiconductor Substances 0.000 claims description 2
- 239000003086 colorant Substances 0.000 claims 5
- 241000209094 Oryza Species 0.000 claims 3
- 239000000969 carrier Substances 0.000 claims 1
- 239000000758 substrate Substances 0.000 abstract 5
- 235000012431 wafers Nutrition 0.000 description 112
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 6
- 229910052594 sapphire Inorganic materials 0.000 description 4
- 239000010980 sapphire Substances 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 238000009795 derivation Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 238000001556 precipitation Methods 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
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Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
Abstract
A light emitting source package comprises a reflective cup disposed in the placing space of a transparent carrier with a plurality of via-holes formed on the end wall of the sealed end; a light emitting unit disposed near an opening end of the reflective cup including a transparent mounting substrate, an light-emitting diode (LED) chip and/or a laser diode (LD) chip installed on the mounting substrate with conductive contacts electrically connected with corresponding conductive contacts on the mounting substrate, and a plurality of external connection conductive pins including first ends electrically connected with corresponding conductive pins of the mounting substrate and second ends protruding to the outside of the transparent carrier through the end wall of the sealed end of the reflective cup and a formation wall of the transparent carrier; and a transparent cover arranged on the transparent carrier to form a sealed space together with the transparent carrier. A heat conducting liquid may be filled in the sealed space to effectively dissipate the heat generated during the operation of the chip. The mounting surface of the mounting substrate can form a 90 or 180 DEG angle together with the end wall of the sealed end of the reflective cup. The light beams emitted from six light-emitting surfaces of the chip can be guided completely, thus improving the brightness.
Description
Technical field
The present invention relates to a kind of light emitting source encapsulation.
Background technology
In recent years, the application of light-emitting diode more and more widely, it is following that to replace general lighting be that the institute of gesture becomes.Yet present light-emitting diode is still not enough aspect heat radiation, so that cause quite serious light decay problem, therefore, a kind of light emitting source encapsulation of dispelling the heat good is necessary.
In view of this, the present application people is engaged in the many years of experience of the sector with it, and in line with excelsior spirit, the active research improvement is so there is generation of the present invention.
Summary of the invention
The purpose of this invention is to provide a kind of the heat radiation well to enable to overcome the light emitting source encapsulation of optical attenuation problem.
According to a feature of the present invention, a kind of light emitting source encapsulation is provided, and this light emitting source encapsulation comprises: the clear hollow carrier, and this transparent carrier has accommodation space; Place the interior reflector of accommodation space of this transparent carrier, this reflector be for the diameter with sealed end and open end and this open end be the tubaeform cup-shaped thing bigger than the diameter of sealing end, the inner wall surface of this reflector is laid with light reflector or phosphor powder layer so that leaded light efficient is promoted, and the end wall of the sealed end of this reflector is formed with a plurality of through holes; Place near the light emission unit the open end of this reflector, this light emission unit comprises and has wafer installation surface and the two or more installation base plate that is formed at the conductive junction point on this installation surface, be installed on the installation surface of this installation base plate and have the LED wafer of the conductive junction point that a plurality of and the corresponding conductive junction point of this installation base plate be electrically connected, and a plurality ofly respectively have one and be connected conductive connecting pin with outside that first end of the corresponding conductive junction point electrical connection of this installation base plate and formation wall that the sealed end that passes this reflector gets end wall and this transparent carrier protrude out second end of this transparent carrier outside; And be arranged at the transparent cover body that can form confined space on this transparent carrier jointly with this transparent carrier, the setting of the through hole by this reflector, the enough physical principles because of cold and hot convection current of heat energy that produced when this LED wafer running produce the mobile purpose that can reach average heat transfer of gas circulation in this confined space.
According to another characteristic of the invention, a kind of light emitting source encapsulation is provided, and this light emitting source encapsulation comprises: the clear hollow carrier, and this transparent carrier has accommodation space; Place the interior reflector of accommodation space of this transparent carrier, this reflector is that the diameter with sealed end and open end and this open end is the tubaeform cup-shaped thing bigger than the diameter of sealing end, the inner wall surface of this reflector is laid with light reflector or phosphor powder layer so that leaded light efficient is promoted, and the end wall of the sealed end of this reflector is formed with a plurality of through holes; Place near the light emission unit the open end of this reflector, this light emission unit comprises LED wafer with a plurality of conductive junction points and a plurality ofly respectively has the outside that formation wall that first end that is electrically connected with the corresponding conductive junction point of this LED wafer and the sealed end that passes this reflector get end wall and this transparent carrier protrudes out second end of this transparent carrier outside and be connected conductive connecting pin; And be arranged at the transparent cover body that can form confined space on this transparent carrier jointly with this transparent carrier, the setting of the through hole by this reflector, the enough physical principles because of cold and hot convection current of heat energy that produced when this LED wafer running produce gas circulation and flow in this confined space, can reach the purpose of heat radiation.
According to another feature of the present invention, a kind of light emitting source encapsulation is provided, and this light emitting source encapsulation comprises: the first transparent installation base plate, this first transparent installation base plate have wafer installation surface and a plurality of conductive junction point that is formed on this wafer installation surface; The second transparent installation base plate, this second transparent installation base plate and this first transparent installation base plate relatively are provided with, and link together via the clear, viscous material so that be formed with accommodation space between them, the light that this accommodation space can send LED wafer and/or laser diode wafer six faces exports to this outside, space fully; Place the light emission unit in this accommodation space, this light emission unit comprise LED wafer with conductive junction point that a plurality of and the corresponding conductive junction point of this first transparent installation base plate be electrically connected with a plurality of respectively have with first end of the corresponding conductive junction point electrical connection of this LED wafer be connected conductive connecting pin with the outside that protrudes out this accommodation space outside; And heat abstractor, this heat abstractor comprises one group of heat pipe, cooling base and a plurality of radiating fin that is installed on this cooling base, each heat pipe in this group heat pipe has first end that protrudes out this accommodation space inside and the second end that is connected to this cooling base, like this, the heat energy that is produced when LED wafer operates is enough derived from this accommodation space inside via this group heat pipe and is delivered to this cooling base, can dissipate via these radiating fins.
According to another feature again of the present invention, a kind of light emitting source encapsulation is provided, and this light emitting source encapsulation comprises: first transparency carrier, this first transparency carrier have wafer installation surface and a plurality of conductive junction point that is formed on this wafer installation surface; Second transparency carrier, this second transparency carrier and this first transparency carrier relatively are provided with, and link together via the clear, viscous material, so that be formed with accommodation space between them, the light that this accommodation space can send LED wafer and/or laser diode wafer six faces exports to this outside, space fully; Place the light emission unit in this accommodation space, this light emission unit comprise have the wafer installation surface and a plurality ofly be arranged on transparent installation base plate on this wafer installation surface, the LED wafer of conductive junction point with corresponding conductive junction point electrical connection of a plurality of and this transparent installation base plate respectively has first end with the corresponding conductive junction point electrical connection of this transparent installation base plate and is connected conductive connecting pin with the outside that protrudes out this accommodation space outside with a plurality of; And heat abstractor, this heat abstractor comprises one group of heat pipe, cooling base and a plurality of radiating fin that is installed on this cooling base, each heat pipe in this group heat pipe has first end that protrudes out this accommodation space inside and the second end that is connected to this cooling base, like this, the heat energy that is produced when LED wafer operates is enough derives from this accommodation space is inner via this group heat pipe, and deliver to this cooling base, can dissipate via these radiating fins.
According to another feature more of the present invention, a kind of light emitting source encapsulation is provided, and this light emitting source encapsulation comprises: the first transparent installation base plate, and this first transparent installation base plate has the wafer installation surface; The second transparent installation base plate, this second transparent installation base plate and this first transparent installation base plate relatively are provided with, and link together via the clear, viscous material, so that be formed with accommodation space between them, the light that this accommodation space can send LED wafer and/or laser diode wafer six faces exports to this outside, space fully; Place the light emission unit in this accommodation space, this light emission unit comprises that at least one respectively has the LED wafer of a plurality of conductive junction points; And heat abstractor, this heat abstractor comprises one group of heat pipe, cooling base and a plurality of radiating fin that is installed on this cooling base, each heat pipe in this group heat pipe has and protrudes out this accommodation space inner and first end that be electrically connected with the corresponding conductive junction point of each LED wafer and the second end that is connected to this cooling base, like this, the heat energy that is produced when LED wafer operates is enough derives from this accommodation space is inner via this group heat pipe, and deliver to this cooling base, can dissipate via these radiating fins, in these heat pipes each is towards the inclined-plane with light reflectance coating of these LED wafer towards the surface of the wafer installation surface of this first transparent installation base plate, and this can derive the sidelight that is sent by these LED wafer.
According to a feature more of the present invention, a kind of light emitting source encapsulation is provided, and this light emitting source encapsulation comprises: the first transparent installation base plate, and this first transparent installation base plate has the wafer installation surface; The second transparent installation base plate, this second transparent installation base plate and this first transparent installation base plate relatively are provided with, and link together via the clear, viscous material, so that be formed with accommodation space between them, the light that this accommodation space can send LED wafer and/or laser diode wafer six faces exports to this outside, space fully; Place the light emission unit in this accommodation space, this light emission unit comprises that at least one respectively has the LED wafer of a plurality of conductive junction points, and circuit board unit, the first end of this circuit board unit is positioned at this accommodation space, and its second end protrudes out in this accommodation space outside, this circuit board unit has to exchange changes DC circuit, the input that DC circuit is changeed in this interchange is suitable for being electrically connected to AC power, and its output is electrically connected to the conductive junction point of these LED wafer, this circuit board unit towards the surface of the wafer installation surface of this first transparent installation base plate for towards the inclined-plane with light reflectance coating of these LED wafer, it can be derived the sidelight that is sent by these LED wafer; And heat abstractor, this heat abstractor comprises one group of heat pipe, cooling base and a plurality of radiating fin that is installed on this cooling base, each heat pipe in this group heat pipe has first end that protrudes out this accommodation space inside and the second end that is connected to this cooling base, like this, the heat energy that is produced when LED wafer operates is enough derives from this accommodation space is inner via this group heat pipe, and deliver to this cooling base, it can dissipate via these radiating fins.
Description of drawings
About the present invention is to reach above-mentioned purpose, the technological means that is adopted and effect thereof, illustrates as follows especially exemplified by preferred embodiment and cooperation:
Fig. 1 is the signal phantom that shows the light emitting source encapsulation of first preferred embodiment of the present invention;
Fig. 2 is the signal phantom that shows the light emitting source encapsulation of second preferred embodiment of the present invention;
Fig. 3 is the signal phantom that shows the light emitting source encapsulation of the 3rd preferred embodiment of the present invention;
Fig. 4 is the signal phantom that shows the light emitting source encapsulation of the 4th preferred embodiment of the present invention;
Fig. 5 is the diagrammatic side view of light emission unit that shows the light emitting source encapsulation of the 5th preferred embodiment of the present invention;
Fig. 6 is the chart that shows the relation of the brightness of different chips and power;
Fig. 7 is the chart that shows the relation of the brightness of different chips and power;
Fig. 8 is the chart that shows the relation of the brightness of different chips and power;
Fig. 9 is the diagrammatic side view of light emission unit that shows the light emitting source encapsulation of the 6th preferred embodiment of the present invention;
Figure 10 is the diagrammatic side view of light emission unit that shows the light emitting source encapsulation of the 7th preferred embodiment of the present invention;
Figure 11 is the top schematic view of light emission unit that shows the light emitting source encapsulation of the 8th preferred embodiment of the present invention;
Figure 12 is the top schematic view of light emission unit that shows the light emitting source encapsulation of the 9th preferred embodiment of the present invention;
Figure 13 is the top schematic view of light emission unit that shows the light emitting source encapsulation of the tenth preferred embodiment of the present invention;
Figure 14 is the signal phantom that shows the light emitting source encapsulation of the 11 preferred embodiment of the present invention;
Figure 15 is the schematic isometric of another implementation of carrier that shows the light emitting source encapsulation of first preferred embodiment of the present invention;
Figure 16 is the schematic isometric of another implementation of carrier that shows the light emitting source encapsulation of second preferred embodiment of the present invention;
Figure 17 is the diagrammatic side view that shows when light emitting source encapsulation of the present invention is used in backlight arrangement;
Figure 18 is the schematic isometric that shows the light emitting source encapsulation of first preferred embodiment of the present invention;
Figure 19 is the schematic isometric that shows the light emitting source encapsulation of second preferred embodiment of the present invention;
Figure 20 is the signal phantom that shows the light emitting source encapsulation of the 13 preferred embodiment of the present invention;
Figure 21 is another signal phantom that shows the light emitting source encapsulation of the 13 preferred embodiment of the present invention;
Figure 22 is the signal phantom that shows the light emitting source encapsulation of the 14 preferred embodiment of the present invention;
Figure 23 is another signal phantom that shows the light emitting source encapsulation of the 14 preferred embodiment of the present invention;
Figure 24 is the signal phantom that shows the light emitting source encapsulation of the 15 preferred embodiment of the present invention;
Figure 25 is another signal phantom that shows the light emitting source encapsulation of the 15 preferred embodiment of the present invention;
Figure 26 is the signal phantom that shows the light emitting source encapsulation of the 16 preferred embodiment of the present invention;
Figure 27 is another signal phantom that shows the light emitting source encapsulation of the 16 preferred embodiment of the present invention;
Figure 28 is the signal phantom that shows the light emitting source encapsulation of the 17 preferred embodiment of the present invention;
Figure 29 is another signal phantom that shows the light emitting source encapsulation of the 17 preferred embodiment of the present invention;
Figure 30 is the signal phantom that shows the light emitting source encapsulation of the 18 preferred embodiment of the present invention;
Figure 31 is another signal phantom that shows the light emitting source encapsulation of the 18 preferred embodiment of the present invention;
Figure 32 is the signal phantom that shows the light emitting source encapsulation of the 12 preferred embodiment of the present invention; And
Figure 33 is the block schematic diagram that shows the interchange commentaries on classics DC circuit of light emitting source encapsulation of the present invention.
Embodiment
In the detailed description of the preferred embodiments of the present invention of back, identical or similar elements is to be indicated by identical label, and their detailed description will be omitted.In addition, for clear disclosure feature of the present invention, the element in the diagram is not to describe by actual ratio.
Fig. 1 is the schematic sectional view that shows the light emitting source encapsulation U1 of first preferred embodiment of the present invention, and Figure 18 is the schematic isometric that is presented at the light emitting source encapsulation U1 among Fig. 1.
Please refer to shown in Fig. 1 and 18, the light emitting source of first preferred embodiment of the present invention encapsulation U1 comprises clear hollow carrier 1, place reflector 2 in this transparent carrier 1, light emission unit 3, and transparent cover body.
This transparent carrier 1 is example (seeing Figure 18) in the present embodiment with the hemisphere, yet, should be noted that this transparent carrier 1 is not restricted to hemisphere, it can have any suitable shape, for example, halfpipe or the like (seeing Figure 15).In addition, as long as can allow light transmit, this transparent carrier 1 can be made by any suitable material.
This reflector 2 is to have blind end and open end, and the diameter of this open end tubaeform cup-shaped thing bigger than the diameter of this blind end.The inner wall surface of this reflector 2 is laid with light reflector or phosphor powder layer (not shown), it can promote leaded light efficient, and be formed with a plurality of through holes 20 at the end wall of blind end, so that hot-air can get the opposite side of end wall via the side flow that these through holes 20 get end wall from the blind end of reflector 2 to the blind end of reflector 2.
This light emission unit 3 comprises transparent installation base plate 30, LED wafer 31 and is connected conductive connecting pin 32 with pair of outer.
This transparent installation base plate 30 can be made by any suitable material, and has the wafer installation surface 300 of parallel with the end surfaces of the sealed end of this reflector 2 (that is, becoming 180 °).On this wafer installation surface 300, be provided with two conductive junction points 301.This is electrically connected to the conductive junction point 301 of a correspondence of this installation base plate 30 to each the end in the conductive connecting pin 32, and its other end passes the sealed end of this reflector 2 and this shell 1 via the open end of this reflector 2 and can protrude out that this shell 1 is outside to be electrically connected with external circuit.
This LED wafer 31 is installed on the wafer installation surface 300 of this installation base plate 30, and has two conductive junction points 310 that are electrically connected with the corresponding conductive junction point 301 of this installation base plate 30 respectively.In the present embodiment, the conductive junction point 310 of this LED wafer 31 is electrically connected to each other via lead 33 with the conductive junction point 301 of this installation base plate 30.
It should be noted that these LED wafer 31 settings like this can make the light that is come out by six surface emitting of this LED wafer 31 be able to all be derived utilization, and then overall brightness is promoted.
This transparent cover body 4 is the open ends that are connected to this carrier 1, and it can form confined space jointly with this carrier 1.In the present embodiment, this lid 4 is spherical encapsulation with this carrier 1 common formation outward appearance.Certainly, as shown in Figure 15, this lid 4 is the encapsulation of tubulose with this carrier 1 common formation outward appearance.Should be noted that, when this lid 4 is the encapsulation of tubulose with this carrier 1 shared formation outward appearance, it is applicable to the backlight arrangement of this case inventor in No. 95117532 patent application, as shown in Figure 17, light emitting source of the present invention encapsulates between the prism of the brightness enhancement film that places backlight arrangement.
As mentioned above, because the setting of the through hole 20 of reflector 2, can cause hot and cold air to flow phenomenon in encapsulation inside, therefore the heat energy that produces owing to the running of LED wafer 31 enough effectively leaves, and then solve because of the overheated optical attenuation problem that rises, so the brightness of light emitting source of the present invention encapsulation U1 is promoted.
It should be noted, except the inner wall surface of this reflector 2, on the surfaces externally and internally of carrier, the wafer installation surface of installation base plate and with the surface of this wafer installation surface on and all can lay phosphor powder layer on the surfaces externally and internally at this lid.
Please refer to Fig. 2 and 19, the light emitting source encapsulation U2 of second preferred embodiment of the present invention is shown.Different with first preferred embodiment, the wafer installation surface 300 of the installation base plate 30 of the light emission unit 3 of present embodiment vertical with the end surfaces of the sealed end of this reflector 2 (that is, becoming 90 °).
Identical with first preferred embodiment, transparent cover body 4 and this carrier 1 of present embodiment can form the encapsulation that outward appearance is a tubulose jointly, as shown in Figure 16.
See also shown in Figure 3ly, the light emitting source of the 3rd preferred embodiment of the present invention encapsulation U3 is shown.Different with first and second preferred embodiments, the LED wafer 31 of this light emission unit 3 is installed on the wafer installation surface 300 of this installation base plate 30 to cover crystal type (Flip Chip), and the surface of the industrial sapphire layer (sapphire) of this LED wafer 31 is formed with V shape groove 34, and it can promote the light reflection efficiency up to 2 times.
It should be noted that in the present embodiment, the lip-deep V shape groove 34 that is formed on the industrial sapphire layer of LED wafer 31 is asymmetrical V shape groove.
See also shown in Figure 4ly, the light emitting source of the 4th preferred embodiment of the present invention encapsulation U4 is shown.Different with the 3rd preferred embodiment, the surface of the industrial sapphire layer of the LED wafer 31 of this light emission unit 3 also is formed with the V shape groove 35 of symmetry except asymmetrical V shape groove 34, and the wafer installation surface 300 of installation base plate 30 is vertical with the end surfaces of the sealed end of this reflector 2.
See also shown in Figure 5ly, the light emission unit 3 of the light emitting source of the 5th preferred embodiment of the present invention encapsulation is shown.In the present embodiment, except this LED wafer 31, this light emission unit 3 also comprises laser diode wafer 4.This laser diode wafer 4 also is mounted on the wafer installation surface 300 of this installation base plate 30, and is to be connected with these LED wafer 31 serial or parallel connections.
In addition, in the present embodiment, be laid in fluorescence coating on the inner surface of this reflector and be doped with the fluorescent material that is fit to this LED wafer 31 and the different wave length of this laser diode wafer 4 respectively, so that laser diode wafer 4 can be when LED wafer 31 once excites wherein a kind of suitable fluorescent material the another kind of suitable fluorescent material of secondary excitation, this can reach two sections energy rank and excite and promote the brightness (see figure 6).Certainly, in aforesaid first to fourth preferred embodiment, this LED wafer can be replaced by laser diode wafer, and this can excite more the high energy rank to send more high brightness effect (seeing Fig. 7 and 8).
See also shown in Figure 9ly, the light emission unit 3 of the light emitting source of the 6th preferred embodiment of the present invention encapsulation is shown.Different with the 5th preferred embodiment, on another surface relative that this laser diode wafer 4 is installed on this installation base plate 30 with wafer installation surface 300.
It should be noted that though this LED wafer 31 is shown on the different surfaces that is arranged on this installation base plate 30 symmetrically with this laser diode wafer 4 in Fig. 9, yet they can be arranged on the different surfaces of this installation base plate 30 asymmetricly.
See also shown in Figure 10ly, the light emitting source of the 7th preferred embodiment of the present invention encapsulation U7 is shown.Different with first to six preferred embodiment, installation base plate is omitted in the present embodiment.These conductive connecting pins 32 are employed gold threads in general routing joint technology (wire bonding process), and are electrically connected to the conductive junction point 310 of the correspondence of this LED wafer 31.Coated by transparent adhesive tape 36 in the junction of these conductive connecting pins 32 with these conductive junction points 310, this can strengthen the connection of these conductive connecting pins 32 and corresponding conductive junction point 310.
See also shown in Figure 11ly, the light emission unit 3 of the light emitting source of the 8th preferred embodiment of the present invention encapsulation is shown.Different with the 5th preferred embodiment, the conductive junction point 310,40 of wafer 31,4 in the present embodiment is arranged on the side of wafer 31,4.
It should be noted, though in the 5th and the 8th preferred embodiment, be example with LED wafer 31 and laser diode wafer 4, yet the present invention is not limited to this, and it can all adopt LED wafer 31 or all adopt laser diode wafer 4.
See also shown in Figure 12ly, the light emission unit 3 of the light emitting source of the 9th preferred embodiment of the present invention encapsulation is shown.Different with the 8th preferred embodiment, present embodiment comprise four wafers 31,4 and these wafers 31,4 with " ten " word shape arranges and is installed on the wafer installation surface 300 of this installation base plate 30.
See also shown in Figure 13ly, the light emission unit 3 of the light emitting source of the tenth preferred embodiment of the present invention encapsulation is shown.Different with the 8th preferred embodiment, present embodiment comprise eight wafers 31,4 and these wafers 31,4 with " rice " word shape arranges and is installed on the wafer installation surface 300 of this installation base plate 30.
See also shown in Figure 14ly, the light emitting source of the 11 preferred embodiment of the present invention encapsulation U11 is shown.Different with first preferred embodiment, the light emitting source encapsulation U11 of present embodiment also comprises the heat abstractor of the outer wall surface that is attached to this carrier 1.This heat abstractor comprises pedestal 80 and a plurality of fin 81 that is formed on this pedestal 80 on the outer wall surface that is installed on this carrier 1.
See also shown in Figure 32ly, the light emitting source of the 12 preferred embodiment of the present invention encapsulation U12 is shown.Different with the 11 preferred embodiment, the heat abstractor of the light emitting source encapsulation U12 of present embodiment comprises one group of heat pipe 82, pedestal 80 and a plurality of fin 81 that is formed on this pedestal 80.
Each heat pipe in this group heat pipe 82 has near the first end the LED wafer 31 that protrudes out this light emission unit 3 and is connected to the second end of this pedestal 80.Therefore, the heat energy that is produced when LED wafer 31 runnings is enough derives from this light emitting source encapsulation inside via this group heat pipe 82, and delivers to this pedestal 80, and it can dissipate via these radiating fins 81.
It should be noted, in aforesaid preferred embodiment, in the confined space of this light emitting source encapsulation U1 to U12, can be poured the non-conductive transparent heat-conducting liquid that is doped with fluorescent material, so that at this (a plurality of) wafer 31, the heat energy that is produced during 4 runnings is enough to be conducted heat, arrives external metallization through the inner heat conduction of confined space by the circulation of non-conductive transparent heat-conducting liquid in this confined space, or through the confined space surface radiating.
It should be noted,, prevent that precipitation reagent must be added into this non-conductive transparent heat-conducting liquid in order to prevent the fluorescent material precipitation.
Perhaps, in aforesaid preferred embodiment, this light emission unit also comprises the phosphor powder layer (not shown) that can cover this (a plurality of) wafer on the installation surface that is formed at this installation base plate, and non-conductive pure water is poured in this confined space, conduct heat by the circulation of non-conductive pure water in this confined space so that the heat energy that is produced when this (a plurality of) wafer running is enough, derive heat through heat pipe again.
In addition, in aforesaid preferred embodiment, conductive junction point and the circuit trace of this transparent installation base plate on the wafer installation surface can be formed by the transparent conductive material as tin indium oxide, indium zinc oxide or the like.
See also shown in Figure 20 and 21, the light emitting source of the 13 preferred embodiment of the present invention encapsulation U13 is shown.In the present embodiment, this light emitting source encapsulation U13 comprises first transparency carrier 90.This first transparency carrier 90 has wafer installation surface 900 and a plurality of conductive junction point 901 that is formed on this wafer installation surface 900.
Heat abstractor comprises one group of heat pipe or metal bar 82, cooling base 80 and a plurality of radiating fin 81 that is installed on this cooling base 80.Each heat pipe 82 in this group heat pipe 82 has the first end that protrudes out this accommodation space inside and is connected to the second end of this cooling base 80, like this, the heat energy that is produced when wafer 31 runnings is enough derived from this accommodation space inside via this group heat pipe 82 and is delivered to this cooling base 80, and it can dissipate via these radiating fins 81.
It should be noted, can be poured the non-conductive transparent heat-conducting liquid that is doped with fluorescent material in the accommodation space, conduct heat, arrive external metallization by the circulation of non-conductive transparent heat-conducting liquid in this confined space so that the heat energy that is produced when this (a plurality of) wafer running is enough through the inner heat conduction of confined space, or through the confined space surface radiating.
In addition, in aforesaid preferred embodiment, conductive junction point and the circuit trace of this transparent installation base plate on the wafer installation surface can be formed by the transparent conductive material as tin indium oxide, indium zinc oxide or the like.
In addition, the outer surface at this first and second transparency carrier also can be formed with phosphor powder layer 902,911.
See also shown in Figure 22 and 23, the light emitting source of the 14 preferred embodiment of the present invention encapsulation U14 is shown.Different with the 13 preferred embodiment, on this first transparency carrier 90, do not form conductive junction point and this light emission unit 3 also comprises transparent installation base plate 30.This installation base plate 30 has wafer installation surface 300 and a plurality of conductive junction point 301 that is installed on this wafer installation surface 300 and is electrically connected with the corresponding conductive junction point 310 of these wafers 31.
See also shown in Figure 24 and 25, the light emitting source of the 15 preferred embodiment of the present invention encapsulation U15 is shown.Different with the 14 preferred embodiment, this first transparency carrier 90 is longer than this second transparency carrier 91.This light emission unit 3 also comprises the interchange away from the end portion of this second transparency carrier 91 that places this first transparency carrier 90 to be changeed DC circuit 37 and is sheathed on metal connector 38 on the end portion of this first transparency carrier 90 that this circuit 37 is installed.This interchange is changeed DC circuit 37 and is had the output that is electrically connected with corresponding conductive connecting pin 32.
This metal connector 38 is at the metal connector that is used on the known bulb bulb is fixed on the AC power supplies socket, and has the electrode that exchanges the input electrical connection of changeing DC circuit 37 with this.
In the present embodiment, cooling base and radiating fin are omitted, and second end that protrudes out in this accommodation space outside of heat pipe 82 is connected to this metal connector 38.
Therefore, present embodiment can replace present bulb.
Figure 26 and 27 shows the light emitting source encapsulation U16 of the 16 preferred embodiment of the present invention.Different with the 13 preferred embodiment, present embodiment also comprises the transparent tube body 92 that is sheathed on this first and second transparency carrier 90 and 91 outsides.This comes to be electrically connected with corresponding conductive junction point 301 via the circuit trace on the installation surface 300 of this installation base plate 30 to heat pipe 82, and first end portion of each heat pipe 82 extends to this body 92 outsides from an end of this body 92, it can further extend to the mounting receptacle of known fluorescent tube, and second end portion of each heat pipe 82 is electrically connected with the output that changes DC circuit 37 exchanging of these body 92 inside.The input that DC circuit 37 is changeed in this interchange is connected to a pair of electrode 370 that is suitable for protruding out to the mounting receptacle of known fluorescent tube.Therefore, the light emitting source of present embodiment encapsulation U16 can replace known fluorescent tube.
Should be noted that this body 92 can be laid with light reflector (not shown) on suitable inner surface.
Figure 28 and 29 shows the light emitting source encapsulation U17 of the 17 preferred embodiment of the present invention.Different with the 13 preferred embodiment, the conductive junction point 310 of the wafer 31 of the light emission unit of present embodiment is electrically connected to corresponding heat pipe 82 via lead 33.The output that DC circuit 37 is changeed in the interchange of this light emission unit 3 is electrically connected to corresponding heat pipe 82, and input is electrically connected to AC power.
It should be noted that this is being formed with light reflecting slant 820 to heat pipe 82 on the surface of the transparency carrier that wafer 31 is installed, it can strengthen the derivation of the light that emitted by wafer 31.
Figure 30 and 31 shows the light emitting source encapsulation U18 of the 18 preferred embodiment of the present invention.Different with the 17 preferred embodiment, the conductive junction point 310 of the wafer 31 of the light emission unit of present embodiment is electrically connected to first electrode trace and second electrode trace of circuit board via lead 33.This circuit board also has to exchange changes DC circuit.The output that DC circuit is changeed in this interchange is electrically connected to this first and second electrode trace, and its input is electrically connected to AC power supplies.The light emitting source encapsulation U18 of present embodiment also has heat abstractor.This heat abstractor comprises heat pipe 82, the cooling base 80 that is connected with this heat pipe 82 and is installed on radiating fin 81 on this cooling base 80.
It should be noted that identical with the 17 preferred embodiment, this circuit board also is formed with light reflecting slant 820, it can strengthen the derivation of the light that emitted by wafer 31.
In order to promote the brightness of light emitting source encapsulation of the present invention, DC circuit is changeed in the interchange of light emitting source encapsulation of the present invention can also comprise the control circuit zone.As shown in Figure 33, this control circuit zone comprises transistor T and pierce circuit OSC at least.
This transistor T have another output of being connected to this interchange and changeing the emitter of one of them output in DC circuit zone, being connected to this interchanges commentaries on classics DC circuit zone and this wafer 31,4 one of them electrode collector electrode and be connected to the base stage of the output of this pierce circuit OSC.
This pierce circuit OSC also is connected to another electrode of this wafer 31,4.
The effect of this control circuit is the conducting and not conducting by pierce circuit OSC oxide-semiconductor control transistors T, this wafer 31,4 become by the pulsed drive current signal and drive, so that when the output signal at the output of this pierce circuit OSC is in high level, this transistor T conducting, this wafer 31, therefore 4 are lighted, and when the output signal at the output of this pierce circuit OSC is in low level, this not conducting of transistor T, therefore this wafer 31,4 is not lighted.
Like this, by increasing the current value of this driving current signal, the instantaneous power of this wafer 31,4 is promoted, and then brightness is promoted.On the other hand, the output signal of the output by adjusting this pierce circuit OSC is in the duration of high level in the unit interval, and the consumed power in this unit interval can remain unchanged.
It should be noted that the principle and the effect that promote brightness in mode so at length disclosed already in the present application people's No. 200510052766.5 patent application case.
In sum, light emitting source of the present invention encapsulation really can be passed through above-mentioned disclosed structure, device, reaches its intended purposes and effect, and does not see the also unexposed use of publication before applying for, meets the important documents such as novelty, creativeness of patent of invention.
In addition, above-mentioned appended diagram and explanation only are embodiments of the invention, are not in order to limit embodiments of the invention; Those skilled in the art are according to feature category of the present invention, and other equivalences of being done change or revise, and all should be included in the scope that following claim defines.
Claims (47)
1. light emitting source encapsulation comprises:
The clear hollow carrier, this transparent carrier has accommodation space;
Place the interior reflector of described accommodation space of this transparent carrier, this reflector is the diameter tubaeform cup-shaped thing bigger than the diameter of sealing end with sealed end and open end and this open end, the inner wall surface of this reflector is laid with light reflector or phosphor powder layer, so that leaded light efficient is promoted, the end wall of the described sealed end of this reflector is formed with a plurality of through holes;
Place near the light emission unit the open end of this reflector, this light emission unit comprises and has wafer installation surface and the two or more installation base plate that is formed at the conductive junction point on this installation surface, be installed on the installation surface of this installation base plate and have the LED wafer of the conductive junction point that a plurality of and the corresponding conductive junction point of this installation base plate be electrically connected, reach a plurality of respectively have first end that is electrically connected with the corresponding conductive junction point of this installation base plate and the end wall of the sealed end that passes this reflector and the formation walls of this transparent carrier, the outside that protrudes out second end of this transparent carrier outside connects conductive connecting pin; And
Be arranged at the transparent cover body that can form confined space on this transparent carrier jointly with this transparent carrier,
The setting of the through hole by this reflector, the enough physical principles because of cold and hot convection current of heat energy that produced when this LED wafer running produce gas circulation in this confined space mobile, and this can reach the purpose of average heat transfer.
2. light emitting source encapsulation as claimed in claim 1, wherein, the wafer installation surface of this transparency carrier vertical with the end wall of the sealed end of this reflector (that is, becoming 90 degree) or parallel (that is, becoming 180 degree).
3. light emitting source encapsulation as claimed in claim 1, wherein, this light emission unit also comprises the phosphor powder layer that can cover this LED wafer on the installation surface that is formed at this installation base plate, and wherein, non-conductive pure water is poured in this confined space, conduct heat by the circulation of non-conductive pure water in this confined space so that the heat energy that is produced when this LED wafer running is enough, derive heat through heat pipe again.
4. light emitting source encapsulation as claimed in claim 1, wherein, the non-conductive transparent heat-conducting liquid that is doped with fluorescent material is poured in this confined space, conduct heat by the circulation of non-conductive transparent heat-conducting liquid in this confined space so that the heat energy that is produced when this LED wafer running is enough, arrive external metallization through the inner heat conduction of confined space, or through the confined space surface radiating.
5. as claim 1,3 or 4 described light emitting source encapsulation, also comprise heat abstractor, this heat abstractor comprises cooling base and a plurality of radiating fin that is formed on this cooling base on the outer wall surface that is installed on this transparent carrier.
6. as claim 1,3 or 4 described light emitting source encapsulation, also comprise heat abstractor, this heat abstractor comprises one group of heat pipe or metal bar, cooling base and a plurality of radiating fin that is installed on this cooling base, each heat pipe in this group heat pipe or the metal bar or metal bar have first end that protrudes out this transparent carrier inside and the second end that is connected to this cooling base, therefore, the heat energy that is produced when LED wafer operates is enough derives from this transparent carrier is inner via this group heat pipe or metal bar, and deliver to this cooling base, it can dissipate through described a plurality of radiating fins.
7. light emitting source encapsulation as claimed in claim 1, wherein, conductive junction point and the circuit trace of this transparent installation base plate on the wafer installation surface formed by the transparent conductive material as tin indium oxide, indium zinc oxide or the like.
8. light emitting source encapsulation as claimed in claim 1, wherein, this transparent carrier and this transparent cover body form hollow sphere jointly.
9. light emitting source encapsulation as claimed in claim 1, wherein, this transparent carrier and this transparent cover body form hollow tube jointly.
10. light emitting source encapsulation as claimed in claim 1, wherein, this light emission unit also comprises another LED wafer and/or laser diode wafer at least, these LED wafer with " one " font, " ten " font or " rice " font is arranged on the wafer installation surface of this transparent installation base plate.
11. light emitting source encapsulation as claimed in claim 10, wherein, these LED wafer and/or laser diode wafer can comprise red light emitting diodes wafer and/or laser diode wafer, green LED wafer and/or laser diode wafer, blue LED wafer and/or laser diode wafer, and are connected to each other with series connection and/or mode in parallel.
12. light emitting source encapsulation as claimed in claim 11, wherein, this phosphor powder layer is the fluorescent material that is doped with different wave length, so that laser diode wafer can be when LED wafer once excites wherein a kind of suitable fluorescent material the another kind of suitable fluorescent material of secondary excitation, can reach two sections energy rank like this and excite and promote brightness, or singly excite more the high energy rank to send more high brightness effect by laser diode wafer.
13. light emitting source as claimed in claim 12 encapsulation, wherein, the fluorescent material of described these different colours comprises that wavelength is 400 to 470nm, 500 to 560nm, 600 to 620nm, and 250 to 380nm etc. fluorescent material.
14. a light emitting source encapsulation comprises:
The clear hollow carrier, this transparent carrier has accommodation space;
Place the interior reflector of accommodation space of this transparent carrier, this reflector is the diameter tubaeform cup-shaped thing bigger than the diameter of sealing end with sealed end and open end and this open end, the inner wall surface of this reflector is laid with light reflector or phosphor powder layer, so that leaded light efficient is promoted, the end wall of the sealed end of this reflector is formed with a plurality of through holes;
Place near the light emission unit the open end of this reflector, the outside that the formation wall that this light emission unit comprises LED wafer with a plurality of conductive junction points and a plurality of end walls that respectively have first end that is electrically connected with the corresponding conductive junction point of this LED wafer and a sealed end that passes this reflector and this transparent carrier protrudes out second end of this transparent carrier outside is connected conductive connecting pin; And
Be arranged at the transparent cover body that can form confined space on this transparent carrier jointly with this transparent carrier,
The setting of the through hole by this reflector, the enough physical principles because of cold and hot convection current of heat energy that produced when this LED wafer running produce gas circulation in this confined space mobile, can reach the purpose of heat radiation like this.
15. light emitting source as claimed in claim 14 encapsulation, wherein, end wall vertical (that is, becoming 90 degree) or parallel (that is, one-tenth 180 is spent) of the longitudinal axis of this LED wafer and the sealed end of this reflector.
16. a light emitting source encapsulation comprises:
The first transparent installation base plate, this first transparent installation base plate have wafer installation surface and a plurality of conductive junction point that is formed on this wafer installation surface;
The second transparent installation base plate, this second transparent installation base plate and this first transparent installation base plate relatively are provided with and link together via the clear, viscous material, so that be formed with accommodation space between them, the light that this accommodation space can send LED wafer and/or laser diode wafer six faces exports to this outside, space fully;
Place the light emission unit in this accommodation space, this light emission unit comprise LED wafer with conductive junction point that a plurality of and the corresponding conductive junction point of this first transparent installation base plate be electrically connected with a plurality of respectively have with first end of the corresponding conductive junction point electrical connection of this LED wafer be connected conductive connecting pin with the outside that protrudes out this accommodation space outside; And
Heat abstractor, this heat abstractor comprises one group of heat pipe, cooling base and a plurality of radiating fin that is installed on this cooling base, each heat pipe in this group heat pipe has first end that protrudes out this accommodation space inside and the second end that is connected to this cooling base, therefore, the heat energy that is produced when LED wafer operates is enough derives from this accommodation space is inner via this group heat pipe, and deliver to this cooling base, it can dissipate via these radiating fins.
17. light emitting source encapsulation as claimed in claim 16, wherein, this light emission unit also comprises and is formed at the phosphor powder layer that can cover this LED wafer on this wafer installation surface, and wherein, non-conductive pure water is poured in this confined space, is dissipated by the circulation of non-conductive pure water in this confined space so that the heat energy that is produced when this LED wafer running is enough.
18. light emitting source encapsulation as claimed in claim 16, wherein, the non-conductive transparent heat-conducting liquid that is doped with fluorescent material is poured in this confined space so that the heat energy that when the running of this LED wafer, is produced enough by this circulation of non-conductive transparent heat-conducting liquid in this confined space dissipated.
19. light emitting source encapsulation as claimed in claim 16, wherein, conductive junction point and the circuit trace of this first transparent installation base plate on the wafer installation surface formed by the transparent conductive material as tin indium oxide, indium zinc oxide etc.
20. light emitting source encapsulation as claimed in claim 16, wherein, this light emission unit also comprises another LED wafer and/or laser diode wafer at least, these LED wafer with " one " font, " ten " font or " rice " font is arranged on the wafer installation surface of this transparent installation base plate.
21. light emitting source encapsulation as claimed in claim 20, wherein, described these LED wafer and/or laser diode wafer can comprise red light emitting diodes wafer and/or laser diode wafer, green LED wafer and/or laser diode wafer, blue LED wafer and/or laser diode wafer, and are connected to each other with series connection and/or mode in parallel.
22. light emitting source encapsulation as claimed in claim 21, wherein, this phosphor powder layer be doped with different wave length fluorescent material so that laser diode wafer can be when LED wafer once excites wherein a kind of suitable fluorescent material the another kind of suitable fluorescent material of secondary excitation, can reach two sections energy rank and excite and promote brightness, or singly excite more the high energy rank to send more high brightness effect by laser diode wafer.
23. light emitting source as claimed in claim 22 encapsulation, wherein, the fluorescent material of these different colours comprises that wavelength is 400 to 470nm, 500 to 560nm, 600 to 620nm, and 250 to 380nm etc. fluorescent material.
24. light emitting source as claimed in claim 16 encapsulation, wherein, this light emission unit also comprises to exchange changes DC circuit, and this interchanges is changeed DC circuit and comprised the input that is electrically connected to AC power and be electrically connected to the output that these outsides are connected conductive connecting pin.
25. light emitting source encapsulation as claimed in claim 16, wherein, this first transparency carrier is longer than this second transparency carrier, and wherein, this light emission unit also comprises and places the interchange away from the end portion of this second transparency carrier of this first transparency carrier to change DC circuit, with on the end portion that is sheathed on this first transparency carrier that this circuit is installed, the externally threaded metal connector of tool, this interchange is changeed DC circuit and is had the output that is electrically connected with corresponding conductive connecting pin, this metal connector is suitable for being connected on the AC power supplies socket with internal thread, and has the electrode that exchanges the input electrical connection of changeing DC circuit with this.
26. a light emitting source encapsulation comprises:
First transparency carrier, this first transparency carrier have wafer installation surface and a plurality of conductive junction point that is formed on this wafer installation surface;
Second transparency carrier, this second transparency carrier and this first transparency carrier relatively are provided with, and be to link together via the clear, viscous material, so that be formed with accommodation space between them, the light that this accommodation space can send LED wafer and/or laser diode wafer six faces exports to this outside, space fully;
Place the light emission unit in this accommodation space, this light emission unit comprise have the wafer installation surface and a plurality ofly be arranged on transparent installation base plate on this wafer installation surface, have a plurality of and this transparent installation base plate corresponding conductive junction point electrical connection conductive junction point LED wafer with a plurality of respectively have with first end of the corresponding conductive junction point electrical connection of this transparent installation base plate be connected conductive connecting pin with the outside that protrudes out this accommodation space outside; And
Heat abstractor, this heat abstractor comprises one group of heat pipe, cooling base and a plurality of radiating fin that is installed on this cooling base, each heat pipe in this group heat pipe has first end that protrudes out this accommodation space inside and the second end that is connected to this cooling base, therefore, the heat energy that is produced when LED wafer operates is enough derives from this accommodation space is inner via this group heat pipe, and deliver to this cooling base, can dissipate via these radiating fins.
27. light emitting source encapsulation as claimed in claim 26, wherein, this light emission unit also comprises and is formed at the phosphor powder layer that can cover this LED wafer on this wafer installation surface, and wherein, non-conductive pure water is poured in this confined space, is dissipated by the circulation of non-conductive pure water in this confined space so that the heat energy that is produced when this LED wafer running is enough.
28. light emitting source encapsulation as claimed in claim 26, wherein, the non-conductive transparent heat-conducting liquid that is doped with fluorescent material is poured in this confined space, is dissipated by the circulation of non-conductive transparent heat-conducting liquid in this confined space so that the heat energy that is produced when this LED wafer running is enough.
29. light emitting source encapsulation as claimed in claim 26, wherein, conductive junction point and the circuit trace of this transparent installation base plate on the wafer installation surface formed by the transparent conductive material as tin indium oxide, indium zinc oxide etc.
30. light emitting source encapsulation as claimed in claim 26, wherein, this light emission unit also comprises another LED wafer and/or laser diode wafer at least, these LED wafer with " one " font, " ten " font or " rice " font is arranged on the wafer installation surface of this transparent installation base plate.
31. light emitting source encapsulation as claimed in claim 30, wherein, these LED wafer and/or laser diode wafer can comprise red light emitting diodes wafer and/or laser diode wafer, green LED wafer and/or laser diode wafer, blue LED wafer and/or laser diode wafer, and are connected to each other with series connection and/or mode in parallel.
32. light emitting source encapsulation as claimed in claim 31, wherein, this phosphor powder layer is the fluorescent material that is doped with different wave length, so that laser diode wafer can be when LED wafer once excites wherein a kind of suitable fluorescent material the another kind of suitable fluorescent material of secondary excitation, this can reach two sections energy rank and excite and promote brightness or singly excite more the high energy rank to send more high brightness effect by laser diode wafer.
33. light emitting source as claimed in claim 32 encapsulation, wherein, the fluorescent material of these different colours comprises that wavelength is 400 to 470nm, 500 to 560nm, 600 to 620nm, and 250 to 380nm etc. fluorescent material.
34. light emitting source encapsulation as claimed in claim 26, wherein, this light emission unit also comprises exchange to change DC circuit, and this interchanges is changeed DC circuit and comprised the input that is electrically connected to AC power and be electrically connected to outputs that described these outsides are connected conductive connecting pin.
35. light emitting source encapsulation as claimed in claim 34, also comprise the transparent tube body that is sheathed on this first and second transparency carriers outside, this comes to be electrically connected with corresponding conductive junction point via the circuit trace on the installation surface of this installation base plate to heat pipe, and first end portion of each heat pipe extends to this body outside from an end of this body, can further extend to the mounting receptacle of existing fluorescent tube, and second end portion of each heat pipe is electrically connected with the output that changes DC circuit exchanging of this body inside, and the input that DC circuit is changeed in this interchange is to be connected to a pair of electrode that is suitable for protruding out to the mounting receptacle that has fluorescent tube now.
36. a light emitting source encapsulation comprises:
The first transparent installation base plate, this first transparent installation base plate has a wafer installation surface;
The second transparent installation base plate, this second transparent installation base plate is relatively to be provided with this first transparent installation base plate and to link together via the clear, viscous material, so that be formed with accommodation space between them, the light that this accommodation space can send LED wafer and/or laser diode wafer six faces exports to this outside, space fully;
Place the light emission unit in this accommodation space, this light emission unit comprises that at least one respectively has the LED wafer of a plurality of conductive junction points; And
Heat abstractor, this heat abstractor comprises one group of heat pipe, cooling base and a plurality of radiating fin that is installed on this cooling base, each heat pipe in this group heat pipe has and protrudes out this accommodation space inner and first end that be electrically connected with the corresponding conductive junction point of each LED wafer and the second end that is connected to this cooling base, therefore, the heat energy that is produced when LED wafer operates is enough derives and delivers to this cooling base via this group heat pipe from this accommodation space inside, can dissipate via these radiating fins, in these heat pipes each towards the surface of the wafer installation surface of this first transparent installation base plate for towards the inclined-plane with light reflectance coating of these LED wafer, it can be derived the sidelight that is sent by these LED wafer.
37. light emitting source encapsulation as claimed in claim 36, wherein, this light emission unit also comprises and is formed at the phosphor powder layer that can cover this LED wafer on this wafer installation surface, and wherein, non-conductive pure water is poured in this accommodation space, is dissipated by the circulation of non-conductive pure water in this accommodation space so that the heat energy that is produced when this LED wafer running is enough.
38. light emitting source encapsulation as claimed in claim 36, wherein, the non-conductive transparent heat-conducting liquid that is doped with fluorescent material is poured in this accommodation space, is dissipated by the circulation of non-conductive transparent heat-conducting liquid in this accommodation space so that the heat energy that is produced when this LED wafer running is enough.
39. light emitting source encapsulation as claimed in claim 36, wherein, this phosphor powder layer is doped with the fluorescent material of different wave length, so that laser diode wafer can be when LED wafer once excites wherein a kind of suitable fluorescent material the another kind of suitable fluorescent material of secondary excitation, can reach two sections energy rank and excite and promote brightness or singly excite more the high energy rank to send more high brightness effect by laser diode wafer.
40. light emitting source as claimed in claim 39 encapsulation, wherein, the fluorescent material of these different colours comprises that wavelength is 400 to 470nm, 500 to 560nm, 600 to 620nm, and 250 to 380nm etc. fluorescent material.
41. light emitting source encapsulation as claimed in claim 16, wherein, this light emission unit also comprises to exchange changes DC circuit, and the output that DC circuit comprises the input that is electrically connected to AC power and is electrically connected to the second end of these heat pipes is changeed in this interchange.
42. a light emitting source encapsulation comprises:
The first transparent installation base plate, this first transparent installation base plate has the wafer installation surface;
The second transparent installation base plate, this second transparent installation base plate and this first transparent installation base plate relatively are provided with, and link together via the clear, viscous material, so that form accommodation space between them, the light that this accommodation space can send LED wafer and/or laser diode wafer six faces exports to this outside, space fully;
Place the light emission unit in this accommodation space, this light emission unit comprises that at least one respectively has the LED wafer of a plurality of conductive junction points, and circuit board unit, the first end of this circuit board unit is positioned at this accommodation space, and its second end protrudes out in this accommodation space outside, this circuit board unit has to exchange changes DC circuit, the input that DC circuit is changeed in this interchange is suitable for being electrically connected to AC power, and its output is electrically connected to the conductive junction point of these LED wafer, this circuit board unit towards the surface of the wafer installation surface of this first transparent installation base plate for towards the inclined-plane with light reflectance coating of these LED wafer, it can be derived the sidelight that is sent by these LED wafer; And
Heat abstractor, this heat abstractor comprises one group of heat pipe, cooling base and a plurality of radiating fin that is installed on this cooling base, each heat pipe in this group heat pipe has first end that protrudes out this accommodation space inside and the second end that is connected to this cooling base, therefore, the heat energy that is produced when LED wafer operates is enough derives from this accommodation space is inner via this group heat pipe, and deliver to this cooling base, can dissipate via these radiating fins.
43. light emitting source encapsulation as claimed in claim 42, wherein, this light emission unit also comprises and is formed at the phosphor powder layer that can cover this LED wafer on this wafer installation surface, and wherein, non-conductive pure water is poured in this accommodation space, is dissipated by the circulation of non-conductive pure water in this accommodation space so that the heat energy that is produced when this LED wafer running is enough.
44. light emitting source encapsulation as claimed in claim 42, wherein, the non-conductive transparent heat-conducting liquid that is doped with fluorescent material is poured in this accommodation space, is dissipated by the circulation of non-conductive transparent heat-conducting liquid in this accommodation space so that the heat energy that is produced when this LED wafer running is enough.
45. light emitting source encapsulation as claimed in claim 44, wherein, this phosphor powder layer is doped with the fluorescent material of different wave length, so that laser diode wafer can be when LED wafer once excites wherein a kind of suitable fluorescent material the another kind of suitable fluorescent material of secondary excitation, can reach two sections energy rank and excite and promote brightness or singly excite more the high energy rank to send more high brightness effect by laser diode wafer.
46. light emitting source as claimed in claim 45 encapsulation, wherein, the fluorescent material of these different colours comprises that wavelength is 400 to 470nm, 500 to 560nm, 600 to 620nm, and 250 to 380nm etc. fluorescent material.
47. DC circuit is changeed in an interchange that is used for the light emitting source encapsulation, comprises:
Exchanging changes the DC circuit zone, and the input that the DC circuit zone has the AC power of being connected to is changeed in this interchange; And
The control circuit zone, this control circuit zone comprises transistor and pierce circuit at least, this transistor has the emitter of one of them output that is connected to this interchange commentaries on classics DC circuit zone, being connected to this interchange changes the collector electrode of one of them electrode of another output in DC circuit zone and this wafer, and be connected to the base stage of the output of this pierce circuit, this pierce circuit also is connected to another electrode of this wafer, conducting and not conducting by the pierce circuit oxide-semiconductor control transistors, this wafer becomes by the pulsed drive current signal and drives, so that when the output signal at the output of this pierce circuit is in high level, this transistor T conducting, therefore this wafer is lighted, and when the output signal at the output of this pierce circuit is in low level, this not conducting of transistor T, therefore this wafer is not lighted, like this, by increasing the current value of this driving current signal, the instantaneous power of this wafer is promoted, and then brightness is promoted.On the other hand, the output signal of the output by adjusting this pierce circuit is in the duration of high level in the unit interval, and the consumed power in this unit interval can remain unchanged.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2007100044207A CN101232061B (en) | 2007-01-22 | 2007-01-22 | Luminous source packaging |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2007100044207A CN101232061B (en) | 2007-01-22 | 2007-01-22 | Luminous source packaging |
Related Child Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN200910221752XA Division CN101764188B (en) | 2007-01-22 | 2007-01-22 | Luminous source encapsulation |
| CN200910221751A Division CN101742776A (en) | 2007-01-22 | 2007-01-22 | Package of light source |
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| Publication Number | Publication Date |
|---|---|
| CN101232061A true CN101232061A (en) | 2008-07-30 |
| CN101232061B CN101232061B (en) | 2013-04-03 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN2007100044207A Expired - Fee Related CN101232061B (en) | 2007-01-22 | 2007-01-22 | Luminous source packaging |
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| CN (1) | CN101232061B (en) |
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