CN101232050A - Unijunction indium gallium nitrogen solar battery structure and method for making the same - Google Patents
Unijunction indium gallium nitrogen solar battery structure and method for making the same Download PDFInfo
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- CN101232050A CN101232050A CNA2007100629780A CN200710062978A CN101232050A CN 101232050 A CN101232050 A CN 101232050A CN A2007100629780 A CNA2007100629780 A CN A2007100629780A CN 200710062978 A CN200710062978 A CN 200710062978A CN 101232050 A CN101232050 A CN 101232050A
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Abstract
A single-junction InGaN solar cell structure is characterized in that the structure comprises a substrate; a low-temperature GaN nucleation layer fabricated on the substrate to increase the nucleation density of the substrate surface; an unintentionally doped GaN buffer layer fabricated on the low-temperature GaN nucleation layer for reducing the defect density of an epitaxial layer and improving the crystal quality; an n-type doped InxGa1-xN layer fabricated on the unintentionally doped GaN buffer layer and served as a portion of an InxGa1-xN p-n junction; and a p-type doped InxGa1-xN layer fabricated on the n-type doped InxGa1-xN layer and served as a portion of the InxGa1-xN p-n junction.
Description
Technical field
The invention belongs to inorganic field of photoelectric technology, be specifically related to a kind of unijunction indium gallium nitrogen (In
xGa
1-xN) solar battery structure and preparation method thereof.
The present invention adopts novel I nxGal-xN ternary alloy three-partalloy semi-conducting material, and its structure and manufacture method can be applicable to In
xGa
1-xN is the manufacturing of high performance solar batteries.
Background technology
Solar cell is the device that the luminous energy of solar irradiation directly is converted to electric energy.Solar cell is used for providing electric energy to load as electric light, computer etc.Also relate to apparatus for storing electrical energy in actual applications, could not have to provide electric energy continuously to load under the sunlit situation like this.Solar cell can produce photovoltage under the situation of illumination.Photovoltage is open circuit voltage VOC under the situation of open circuit outside, and the electric current that obtains under the short circuit is short circuit current ISC outside.Under loaded situation, the power output of solar cell equals the voltage drop in the load and the product of the electric current by load, and it is less than the product of open circuit voltage and short circuit current.The peak power output of definition solar cell and the ratio of VOCISC are fill factor, curve factor.
A subject matter of being run in the middle of development of solar cell at present and the utilization is exactly that its photoelectric conversion efficiency is lower, especially in solar cell application during in the field, cosmic space, photoelectric conversion efficiency requirement to solar cell is higher, but also needs material to have certain radiation resistance.
Use with regard to the space, the main electric energy on present space station and the artificial earth satellite all provides by solar cell system.Power-supply system is one of important subsystem of satellite and space exploration system, report 10 years from now on to 20 in the period of, needing most one of the key technology of capturing for space exploration is exactly energy resource system, is exactly the energy to the restriction of space station and satellite maximum.Communication and information processing all need a large amount of energy on the star.The space solar cell of using mainly comprises monocrystaline silicon solar cell and GaAs based solar cell at present, and limiting their further subject matter of using is that photoelectric conversion efficiency is lower.Owing to be subjected to the property effect of material own, the photoelectric conversion efficiency of first generation space solar cell monocrystaline silicon solar cell is probably between 18% to 23%, the GaAs based solar cell of second generation space solar cell, some raising (being between 22% to 26.5%) relatively of its photoelectric conversion efficiency, but this does not still satisfy the needs that in use in the space energy increased day by day.
Along with deepening continuously that the III-V group nitride material is studied, the researcher finds indium gallium nitrogen (In
xGa
1-xN) the almost ideal coupling of the energy gap of material and solar spectrum (J.Appl.Phys.94 (2003) 6477 for J.Wu, et al), Theoretical Calculation shows, uses In
xGa
1-xThe N alloy is made binode. and (a junction battery energy gap is 1.1eV, and another becomes 1.7eV) solar battery efficiency can be up to 50%, if make many knot In
xGa
1-xThe N battery, most effective reaching more than 70%.
Simultaneously, space solar cell also can be subjected to the influence of space radiation.In the near-earth orbit space environment, when high energy particle irradiation, give lattice with energy delivery by bumping with lattice atoms; When energy during, just make lattice atoms be subjected to displacement the generation defective, and then influence minority carrier life time greater than certain threshold value, solar cell is formed radiation damage, power output is descended gradually with the increase of irradiation cumulant, and whole life period need be changed the battery sheet in the space station, increases operation and maintenance cost.And In
xGa
1-xThe N material has good radiation resistance (J.W.Ager III, et al, Proc.of SPIE, 5530 (2004) 308), In thus
xGa
1-xThe N material is fit to be applied to the solar cell of spacecraft very much.
In
xGa
1-xThe N solar cell can make full use of the photon energy of different-waveband, has the conversion efficiency height, and power/area ratio is big, advantages such as anti-irradiation, novel I n
xGa
1-xThe research and development of N solar cell makes real high performance solar batteries become possibility.
Summary of the invention
The objective of the invention is to propose a kind of unijunction indium gallium nitrogen solar battery structure and preparation method thereof, utilize structure of the present invention and manufacture method, can develop theoretical transformation efficient and reach 28% and solar cell with good radiation resistance.
A kind of unijunction indium gallium nitrogen solar battery structure of the present invention is characterized in that, comprising:
One substrate;
One low temperature gallium nitride nucleating layer, this low temperature gallium nitride nucleating layer be produced on substrate above, this nucleating layer can increase the nucleation density of substrate surface;
One non-ly has a mind to the doped gallium nitride resilient coating, this is non-have a mind to doped gallium nitride resilient coating be produced on low temperature gallium nitride nucleating layer above, this resilient coating can reduce the defect concentration of epitaxial loayer, improves crystal mass;
One n type doping In
xGa
1-xThe N layer, this n type doping In
xGa
1-xThe N layer be produced on the non-high resistant gallium nitride resilient coating of having a mind to mix above, this n type doped layer is In
xGa
1-xThe part of N p-n junction;
One p type doping In
xGa
1-xThe N layer, this p type doping In
xGa
1-xThe N layer is produced on n type doping In
xGa
1-xAbove the N layer, this p type doped layer is In
xGa
1-xThe part of N p-n junction.
Wherein said substrate is Sapphire Substrate or silicon carbide substrates or silicon substrate.
The thickness of wherein said low temperature gallium nitride nucleating layer is 0.01-0.05 μ m, and preferable range is 0.01-0.03 μ m.
Wherein said non-thickness of having a mind to the doped gallium nitride resilient coating is 1.00-2.00 μ m, and preferable range is 1.50-2.00 μ m.
Wherein said n type doping In
xGa
1-xN layer, thickness are 0.10-0.80 μ m, and preferable range is 0.10-0.40 μ m.
Wherein said p type doping In
xGa
1-xN layer, thickness are 0.20-1.00 μ m, and preferable range is 0.20-0.50 μ m.
The manufacture method of a kind of unijunction In-Ga-N solar of the present invention battery is characterized in that, may further comprise the steps:
Step 1: select a substrate;
Step 2: adopt the metal-organic chemical vapor deposition equipment technology, one deck low temperature gallium nitride nucleating layer of at first on substrate, growing, growth thickness is 0.01-0.50 μ m, and preferable range is 0.10-0.30 μ m, and this nucleating layer can increase the nucleation density of substrate surface;
Step 3: adopt the metal-organic chemical vapor deposition equipment technology, change underlayer temperature, the non-doped gallium nitride resilient coating intentionally of growth on low temperature gallium nitride nucleating layer, growth thickness is 1.00-2.00 μ m, preferable range is 1.50-2.00 μ m, this resilient coating can reduce the defect concentration of epitaxial loayer, improves crystal mass;
Step 4: adopt the metal-organic chemical vapor deposition equipment technology, change growth conditions, grown silicon doped n type doping In on non-doped gallium nitride resilient coating intentionally
xGa
1-xThe N layer, 0.35≤x≤0.65 wherein, preferable range is 0.45≤x≤0.55, and growth thickness is 0.10-0.80 μ m, and preferable range is 0.10-0.40 μ m, and this n type doped layer is In
xGa
1-xThe part of N p-n junction.
Step 5: adopt the metal-organic chemical vapor deposition equipment technology, last, at n type doping In
xGa
1-xGrowth magnesium doped p type doping In on the N layer
xGa
1-xThe N layer, 0.35≤x≤0.65 wherein, preferable range is 0.45≤x≤0.55, and growth thickness is 0.20-1.00 μ m, and preferable range is 0.20-0.50 μ m, and this p type doped layer is In
xGa
1-xThe part of N p-n junction.
Wherein said substrate is Sapphire Substrate or silicon carbide substrates or silicon substrate.
The growth temperature of wherein said low temperature gallium nitride nucleating layer is 450-650 ℃, and preferable range is 500-600 ℃; Growth pressure is 13.33-26.67kPa.
Wherein said non-growth temperature of having a mind to the doped gallium nitride resilient coating is 900-1100 ℃, and preferable range is 1000-1100 ℃; Growth pressure is 13.33-26.67kPa.
Wherein said n type doping In
xGa
1-xThe growth temperature of N layer is 700-1100 ℃, and preferable range is 800-1100 ℃; Growth pressure is 13.33-26.67kPa; Electron concentration is 0.5-5 * 10
19/ cm
3, preferable range is 1-5 * 10
19/ cm
3
Wherein said p type doping In
xGa
1-xThe N layer is magnesium doped p type doping In
xGa
1-xN layer, growth temperature are 700-1100 ℃, and preferable range is 800-1100 ℃; Growth pressure is 13.33-26.67kPa; Hole concentration is 1-8 * 10
18/ cm
3, preferable range is 5-8 * 10
18/ cm
3
Key of the present invention is to adopt In
xGa
1-xThe N ternary-alloy material utilizes the good radiation resistance of this alloy material, but and by changing the wherein energy gap of the component preferred alloy of indium, gallium, and, obtain high-quality In by accurate control growing condition
xGa
1-xN p-n junction structure, thus can reach 28% theoretical maximum conversion efficiency in theory.
Description of drawings
For further specifying content of the present invention, below in conjunction with embodiment and accompanying drawing the present invention is done a detailed description, wherein:
Fig. 1 is unijunction In of the present invention
xGa
1-xN solar cell material structure chart.
Embodiment
Key of the present invention is to adopt unique indium gallium nitrogen (In
xGa
1-xN) ternary-alloy material, utilize the good radiation resistance of this alloy material, but and by changing the wherein energy gap of the component preferred alloy of indium, gallium, and by accurate control growing condition, as growth temperature, growth pressure, V/III ratio, obtain high-quality In
xGa
1-xN p-n junction structure, thus can reach 28% theoretical maximum conversion efficiency in theory.
The present invention adopts novel I n
xGa
1-xN ternary alloy three-partalloy semi-conducting material, its structure and manufacture method can be applicable to In
xGa
1-xN is the manufacturing of high performance solar batteries.
See also shown in Figure 1ly, the present invention includes a kind of unijunction In
xGa
1-xThe N solar battery structure, comprising:
One substrate 10, this substrate 10 comprises Sapphire Substrate, silicon carbide substrates and silicon substrate, also comprises being fit to unijunction In
xGa
1-xOther substrates of N solar cell material extension.
One low temperature gallium nitride nucleating layer 20, this low temperature gallium nitride nucleating layer 20 be produced on substrate 10 above, growth thickness is 0.01-0.05 μ m, preferable range is 0.01-0.03 μ m, this nucleating layer can increase the nucleation density of substrate surface.
One non-doped gallium nitride resilient coating 30 intentionally, this is non-have a mind to doped gallium nitride resilient coating 30 be produced on low temperature gallium nitride nucleating layer 20 above, growth thickness is 1.00-2.00 μ m, preferable range is 1.50-2.00 μ m, this resilient coating can reduce the defect concentration of epitaxial loayer, improves crystal mass.
One n type doping In
xGa
1-x N layer 40, this n type doping In
xGa
1-x N layer 40 be produced on the non-high resistant gallium nitride resilient coating 30 of having a mind to mix above, growth thickness is 0.10-0.80 μ m, preferable range is 0.10-0.40 μ m, this n type doped layer is In
xGa
1-xThe part of N p-n junction.
One p type doping In
xGa
1-x N layer 50, this p type doping In
xGa
1-x N layer 50 is produced on n type doping In
xGa
1-xAbove the N layer 40, growth thickness is 0.20-1.00 μ m, and preferable range is 0.20-0.50 μ m, and this p type doped layer is In
xGa
1-xThe part of N p-n junction.
Please consult shown in Figure 1ly again, the present invention includes a kind of unijunction In
xGa
1 -xThe N method for manufacturing solar battery is characterized in that, described manufacture method preferentially adopts the metal-organic chemical vapor deposition equipment technology including, but not limited to metal-organic chemical vapor deposition equipment technology, molecular beam epitaxy technique and vapor phase epitaxy technique.Comprising following steps:
Step 1: select a substrate 10, this substrate 10 comprises Sapphire Substrate, silicon carbide substrates and silicon substrate, also comprises being fit to unijunction In
xGa
1-xOther substrates of N solar cell material extension.
Step 2: adopt the metal-organic chemical vapor deposition equipment technology, growing low temperature gallium nitride nucleating layer 20 on substrate 10, growth temperature is 450-650 ℃, growth pressure is 13.33-26.67kPa, thickness is 0.01-0.05 μ m, preferable range is 0.01-0.03 μ m, and 500-600 ℃, this nucleating layer can increase the nucleation density of substrate surface.
Step 3: adopt the metal-organic chemical vapor deposition equipment technology, the non-doped gallium nitride resilient coating 30 intentionally of growth on low temperature gallium nitride nucleating layer 20, growth temperature is 900-1100 ℃, growth pressure is 13.33-26.67kPa, thickness is 1.00-2.00 μ m, and preferable range is 1000-1100 ℃, 1.50-2.00 μ m, this resilient coating can reduce the dislocation density of epitaxial loayer, improves crystal mass.
Step 4: adopt the metal-organic chemical vapor deposition equipment technology, change growth conditions, grown silicon doped n type doping In on non-doped gallium nitride resilient coating 30 intentionally
xGa
1-x N layer 40,0.35≤x≤0.65 wherein, growth temperature is 700-1100 ℃, and growth pressure is 13.33-26.67kPa, and thickness is 0.10-0.80 μ m, and electron concentration is 0.5-5 * 10
19/ cm
3, preferable range is 0.45≤x≤0.55,800-1100 ℃, and 0.10-0.40 μ m, 1-5 * 10
19/ cm
3, this n type doped layer is In
xGa
1-xThe part of N p-n junction.
Step 5: adopt the metal-organic chemical vapor deposition equipment technology, at the n of silicon doping type doping In
xGa
1-xGrowth magnesium doped p type doping In on the N layer 40
xGa
1-xN layer 50,0.35≤x≤0.65 wherein, growth temperature is 700-1100 ℃, and growth pressure is 13.33-26.67kPa, and thickness is 0.20-1.00 μ m, and hole concentration is 1-8 * 10
18/ cm
3, preferable range is 0.45≤x≤0.55.800-1100 ℃, 0.20-0.50 μ m, 5-8 * 10
18/ cm
3, this p type doped layer is In
xGa
1-xThe part of N p-n junction.
Unijunction In of the present invention
xGa
1-xConcrete growth temperature, growth pressure and the growth thickness of each grown layer of N solar battery structure are as shown in table 1:
Table 1
| Title | Growth temperature | Growth pressure | Growth thickness | Remarks |
| Low temperature gallium nitride nucleating layer 20 | 0 ℃ of 450-65, preferable range is 0 ℃ of 500-60 | 13.33- 26.67k Pa | 0.01-0.0 5 μ m, preferable range is 0.01-0.0 3 μ m | - |
| Non-doped gallium nitride resilient coating 30 intentionally | 00 ℃ of 900-10, preferable range is 100 ℃ of 1000-1 | 13.33- 26.67k Pa | 1.00-2.0 0 μ m, preferable range is 1.50-2.0 0 μ m | - |
| Silicon doping n opens In xGa 1-xN layer 40 | 00 ℃ of 700-11, preferable range is 00 ℃ of 800-11 | 13.33- 26.67k Pa | 0.10-0.8 0 μ m, preferable range is 0.10-0.4 0 μ m | 0.35≤x≤0.65, electron concentration are 0.5-5 * 10 19/cm 3, preferable range is 0.45≤x≤0.55,1-5 * 10 19/cm 3 |
| Magnesium doping p opens In xGa 1-xN layer 50 | 00 ℃ of 700-11, preferable range is 00 ℃ of 800-11 | 13.33- 26.67k Pa | 0.20-1.0 0 μ m, preferable range is 0.20-0.5 0 μ m | 0.35≤x≤0.65, hole concentration are 1-8 * 10 18/cm 3, preferable range is 0.45≤x≤0.55,5-8 * 10 18/cm 3 |
The present invention has reduced technology difficulty, has reduced processing step, has obtained high-quality In
xGa
1-xN p-n junction structural material has improved the surface smoothness of crystal mass, p-n junction interface quality and the material of material simultaneously.This material structure can more effectively improve the photoelectric conversion efficiency of solar cell, and therefore, the present invention can significantly improve unijunction In
xGa
1-xThe N Solar cell performance.
Claims (12)
1. a unijunction indium gallium nitrogen solar battery structure is characterized in that, comprising:
One substrate;
One low temperature gallium nitride nucleating layer, this low temperature gallium nitride nucleating layer be produced on substrate above, this nucleating layer can increase the nucleation density of substrate surface;
One non-ly has a mind to the doped gallium nitride resilient coating, this is non-have a mind to doped gallium nitride resilient coating be produced on low temperature gallium nitride nucleating layer above, this resilient coating can reduce the defect concentration of epitaxial loayer, improves crystal mass;
One n type doping In
xGa
1-xThe N layer, this n type doping In
xGa
1-xThe N layer be produced on the non-high resistant gallium nitride resilient coating of having a mind to mix above, this n type doped layer is In
xGa
1-xThe part of N p-n junction;
One p type doping InxGa1-xN layer, this p type doping In
xGa
1-xThe N layer is produced on n type doping In
xGa
1-xAbove the N layer, this p type doped layer is In
xGa
1-xThe part of N p-n junction.
2. unijunction In-Ga-N solar battery according to claim 1 is characterized in that, wherein said substrate is Sapphire Substrate or silicon carbide substrates or silicon substrate.
3. unijunction In-Ga-N solar battery according to claim 1 is characterized in that, the thickness of wherein said low temperature gallium nitride nucleating layer is 0.01-0.05 μ m, and preferable range is 0.01-0.03 μ m.
4. unijunction In-Ga-N solar battery according to claim 1 is characterized in that, wherein said non-thickness of having a mind to the doped gallium nitride resilient coating is 1.00-2.00 μ m, and preferable range is 1.50-2.00 μ m.
5. unijunction In-Ga-N solar battery according to claim 1 is characterized in that, wherein said n type doping In
xGa
1-xN layer, thickness are 0.10-0.80 μ m, and preferable range is 0.10-0.40 μ m.
6. unijunction In-Ga-N solar battery according to claim 1 is characterized in that, wherein said p type doping In
xGa
1-xN layer, thickness are 0.20-1.00 μ m, and preferable range is 0.20-0.50 μ m.
7. the manufacture method of a unijunction In-Ga-N solar battery is characterized in that, may further comprise the steps:
Step 1: select a substrate;
Step 2: adopt the metal-organic chemical vapor deposition equipment technology, one deck low temperature gallium nitride nucleating layer of at first on substrate, growing, growth thickness is 0.01-0.50 μ m, and preferable range is 0.10-0.30 μ m, and this nucleating layer can increase the nucleation density of substrate surface;
Step 3: adopt the metal-organic chemical vapor deposition equipment technology, change underlayer temperature, the non-doped gallium nitride resilient coating intentionally of growth on low temperature gallium nitride nucleating layer, growth thickness is 1.00-2.00 μ m, preferable range is 1.50-2.00 μ m, this resilient coating can reduce the defect concentration of epitaxial loayer, improves crystal mass;
Step 4: adopt the metal-organic chemical vapor deposition equipment technology, change growth conditions, grown silicon doped n type doping In on non-doped gallium nitride resilient coating intentionally
xGa
1-xThe N layer, 0.35≤x≤0.65 wherein, preferable range is 0.45≤x≤0.55, and growth thickness is 0.10-0.80 μ m, and preferable range is 0.10-0.40 μ m, and this n type doped layer is In
xGa
1-xThe part of N p-n junction.
Step 5: adopt the metal-organic chemical vapor deposition equipment technology, last, at n type doping In
xGa
1-xGrowth magnesium doped p type doping In on the N layer
xGa
1-xThe N layer, 0.35≤x≤0.65 wherein, preferable range is 0.45≤x≤0.55, and growth thickness is 0.20-1.00 μ m, and preferable range is 0.20-0.50 μ m, and this p type doped layer is In
xGa
1-xThe part of N p-n junction.
8. the manufacture method of unijunction In-Ga-N solar battery according to claim 7 is characterized in that, wherein said substrate is Sapphire Substrate or silicon carbide substrates or silicon substrate.
9. the manufacture method of unijunction In-Ga-N solar battery according to claim 7 is characterized in that, the growth temperature of wherein said low temperature gallium nitride nucleating layer is 450-650 ℃, and preferable range is 500-600 ℃; Growth pressure is 13.33-26.67kPa.
10. the manufacture method of unijunction In-Ga-N solar battery according to claim 7 is characterized in that, wherein said non-growth temperature of having a mind to the doped gallium nitride resilient coating is 900-1100 ℃, and preferable range is 1000-1100 ℃; Growth pressure is 13.33-26.67kPa.
11. the manufacture method of unijunction In-Ga-N solar battery according to claim 7 is characterized in that, wherein said n type doping In
xGa
1-xThe growth temperature of N layer is 700-1100 ℃, and preferable range is that 800-1100 ℃ of growth pressure is 13.33-26.67kPa; Electron concentration is 0.5-5 * 10
19/ cm
3, preferable range is 1-5 * 10
19/ cm
3
12. the manufacture method of unijunction In-Ga-N solar battery according to claim 7 is characterized in that, wherein said p type doping In
xGa
1-xThe N layer is magnesium doped p type doping In
xGa
1-xN layer, growth temperature are 700-1100 ℃, and preferable range is 800-1100 ℃; Growth pressure is 13.33-26.67kPa; Hole concentration is 1-8 * 10
18/ cm
3, preferable range is 5-8 * 10
18/ cm
3
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| CN102254964A (en) * | 2011-07-21 | 2011-11-23 | 天津理工大学 | Photovoltaic device with p-n-substrate type InGaN (indium-gallium nitride) multilayer film structure and manufacturing method thereof |
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| CN102792457A (en) * | 2010-03-18 | 2012-11-21 | 国立大学法人京都工芸纤维大学 | Llight-absorbing material and photoelectric conversion element using same |
| CN101866967A (en) * | 2010-04-30 | 2010-10-20 | 华中科技大学 | Solar cell |
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| CN113594028A (en) * | 2021-07-27 | 2021-11-02 | 中国科学院苏州纳米技术与纳米仿生研究所 | Gallium nitride p-type doping method, manufacturing method of GaN-based PN junction and application of GaN-based PN junction |
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