CN101227808B

CN101227808B - Heating module of circuit board

Info

Publication number: CN101227808B
Application number: CN200710000942XA
Authority: CN
Inventors: 许哲嘉
Original assignee: Advantech Co Ltd
Current assignee: Advantech Co Ltd
Priority date: 2007-01-15
Filing date: 2007-01-15
Publication date: 2011-05-18
Anticipated expiration: 2027-01-15
Also published as: CN101227808A

Abstract

The invention relates to a heating module of a circuit board, which comprises a metal oxide semiconductor field efficiency transistor, a direct power supply, a current sensor and an on-state resistance controller, wherein the metal oxide semiconductor field efficiency transistor is provided with a radiating rib which is provided for eradiating heat energy outwards, the direct power supply provides stable voltage to the metal oxide semiconductor field efficiency transistor, the current sensor is provided for detecting the current intensity which flows into the metal oxide semiconductor field efficiency transistor, the on-state resistance controller can regulate the on-state resistance value of the metal oxide semiconductor field efficiency transistor according to the current intensity which is detected by the current sensor, which enables the metal oxide semiconductor field efficiency transistor to be in the critical state which will be communicated but is not communicated, and thereby the metal oxide semiconductor field efficiency transistor produces the heat energy continuingly.

Description

The heating module of circuit board

Technical field:

The present invention relates to a kind of technical field that promotes the electric equipment internal temperature, but refer to especially a kind ofly give out suitable heat and make temperature increase electric equipment in extremely in the working range, and then make the heating module of the circuit board that this electric equipment can turn round in low temperature environment.

Background technology:

Electronic building brick on the general electric equipment internal control circuit plate, the temperature of its normal operation is between 0 ℃～75 ℃ approximately, therefore often be sub-zero cold district in some temperature, desire to make the various electronic building bricks on the circuit board in the electric equipment to operate normally, then just must make this electric equipment inner sustain in a suitable temperature range.

And keep the inner proper temperature method of electric equipment in early days, mainly be in insulation material this electric equipment being coated on, yet electric equipment has much more very joints and control button usually, therefore it will be coated unlikely realization fully, so very limited of the effect of its holding temperature.Then be to be used in to set up a heater in this electric equipment and improve the problems referred to above at present, shown in the patent that the TaiWan, China number of registration is counted M265900 number, utilize this heater to produce heat and make bulk temperature in the electric equipment be promoted to certain value or near the electronic building brick on the circuit board, low excessively to avoid the electronic building brick temperature.Yet, present heater, as electric heating piece etc., it all is located at the outside of circuit board, therefore can comparatively take the space of electric equipment, carries out making the volume of this electric equipment therefore must be set as bigger.

Summary of the invention:

Technical problem solved by the invention is: at above-mentioned the deficiencies in the prior art, a kind of electric equipment temperature inside that promotes is provided, makes the heating module of the circuit board that the electronic building brick on the circuit board of electric equipment inside in low temperature environment still can run well.

In order to solve the problems of the technologies described above, the technical solution adopted in the present invention is: a kind of heating module of circuit board, its structure comprise a metal oxide semiconductcor field effect transistor, a direct current power supply, a current sensor and an on state resistance controller; The heat that is produced when wherein this metal oxide semiconductcor field effect transistor has fin confession with this metal oxide semiconductcor field effect transistor energising is distributed to the outside; This DC power supply provides a burning voltage to give this metal oxide semiconductcor field effect transistor; This current sensor is serially connected with between this metal oxide semiconductcor field effect transistor and the DC power supply, flow into the current strength of this metal oxide semiconductcor field effect transistor for detecting, this on state resistance controller is in parallel with this metal oxide semiconductcor field effect transistor and this current sensor, adjust the on state resistance value of this metal oxide semiconductcor field effect transistor according to this current sensor institute current detected intensity, the critical condition of conducting not so that this metal oxide semiconductcor field effect transistor perseverance is in conducting continues to produce heat to make this metal oxide semiconductcor field effect transistor by this.

So, just can be by the temperature in this heating module lifting electric equipment, so that the electronic component that this electrical equipment is equipped with on the interior circuit board in low temperature environment still can be kept normal operation, and owing to this heating module directly is assembled on this circuit board, therefore comparatively do not take up space, so that the volume of this electric equipment and weight are significantly dwindled, and make it meet light, thin, short, the little trend of electric equipment now.

Description of drawings

Fig. 1 is the system block diagrams of first embodiment of the invention.

Fig. 2 is the circuit diagram of first embodiment of the invention.

Fig. 3 is the schematic perspective view of first embodiment of the invention.

Fig. 4 is the performance diagram of N type MOSFET.

Fig. 5 is the system block diagrams of second embodiment of the invention.

Fig. 6 is the circuit diagram of third embodiment of the invention.

Fig. 7 is the schematic perspective view of fourth embodiment of the invention.

Fig. 8 is the system block diagrams of fifth embodiment of the invention.

Fig. 9 is the system block diagrams of sixth embodiment of the invention.

Figure 10 is the system block diagrams of seventh embodiment of the invention.

Label declaration:

1 heating module, 10 transistors

100 fin, 11 DC power supply

12 current sensors, 13 R _DSController

14 conducting strips

2 circuit boards, 20 power circuits

21 start-up circuits, 22 operating systems

3 electric equipments, 30 power supplys

Embodiment:

See also Fig. 1-shown in Figure 3, be the first embodiment of the present invention, it points out that this heating module 1 is located on the circuit board 2, and wherein this heating module 1 comprises:

One metal oxide semiconductcor field effect transistor 10, English abbreviates MOSFET as, full name is METAL OXIDE SEMICONDUCTORFIELD EFFECT TRANSISTOR, abbreviate transistor 10 (being MOSFET10) in this manual as, it has the heat that is produced when a fin 100 supplies 10 energisings of this transistor and is distributed to the outside;

One direct current power supply 11 provides a burning voltage to give this transistor 10; One current sensor 12 is serially connected with between this transistor 10 and the DC power supply 11, flows into the current strength of this transistor 10 for detecting; And

One on state resistance controller 13, i.e. R _DSController, it is in parallel with this transistor 10 and this current sensor 12, can adjust the on state resistance value R of this transistor 10 according to 12 current detected intensity of this current sensor _DS, the critical condition of conducting not so that these transistor 10 perseverances are in conducting makes this transistor 10 continue to produce heats by this.

Because as the heating main body, it is by R with this transistor 10 for heating module 1 of the present invention _DSController 13 control V _GSVoltage is adjusted the on state resistance value R of this MOSFET10 _DSTherefore the magnitude of voltage when DC power supply 11 these transistors 10 of supply is V _DSThe time, then the thermal power P that produced of this transistor 10 can be learnt by following formula:

P = {\frac{(V_{DS})}{R_{DS}}}^{2}

Seeing also shown in Figure 4ly, is example with N type MOSFET, under general behaviour in service, and this R _DSController 13 can control V _GSGreater than V _{GS (th)}So that these transistor 10 conductings, the R of this moment _DSValue is minimum, and just as short-circuit condition, and this transistor 10 is operated in Area B.And when being operated in Area A as this transistor 10, just can obtain big R _DSValue makes this transistor 10 can conducting, and this transistor 10 just can be used as a heating component and used this moment.

According to above-mentioned characteristic, providing the burning voltage that gives this transistor 10 when the DC power supply 11 of this heating module 1 is V, and electric current is I, and this current sensor 12 can detect this electric current I and feedback and give R _DSController 13, this R _DSController can be adjusted this R according to the electric current of feedbacking _DS, make electric current I remain on set point.The thermal power P that this moment, this transistor 10 was produced, if disregard current sensor 12 losses, then can satisfy above-mentioned formula and following formula simultaneously:

P＝V*I

See also shown in Figure 5ly, be the second embodiment of the present invention, its structure is roughly identical with this first embodiment, and difference only be can be according to the quantity that need increase this heating module 1, for improving the efficient that heats up on the circuit board 2 of this second embodiment.

See also shown in Figure 6, be the third embodiment of the present invention, its structure is roughly identical with this first embodiment, and difference only is that the heating module 1 of the 3rd embodiment can be by the quantity that increases this transistor 10, for the efficient that improves intensification, and those transistors 10 are state in parallel.

See also shown in Figure 7, be the fourth embodiment of the present invention, its structure is roughly identical with this first embodiment, and difference only is that the heating module 1 of this embodiment more comprises at least one conducting strip 14 for combining with the fin 100 of this transistor 10, is directed to the place that must promote temperature for the heat with fin 100.

See also shown in Figure 8, be the fifth embodiment of the present invention, its structure is roughly identical with this first embodiment, and only being the circuit board 2 of this embodiment, difference is located in the electric equipment 3, and this circuit board 2 is the motherboard of this electric equipment 3, wherein this circuit board 2 has a power circuit 20, this power circuit 20 is switched on when the power line of this electric equipment 3 is connected to power supply 30, this heating module 1 is parallel to this power circuit 20, and its DC power supply is changed by the power supply of this power circuit 20 and provided, so that this heating module 1 begins to produce heat when the power line of this electric equipment 3 is connected to power supply 30.

See also shown in Figure 9, be the sixth embodiment of the present invention, its structure is roughly identical with the 5th embodiment, and difference only is that the circuit board 2 of this embodiment has more a start-up circuit 21, the operating system 22 of this electric equipment 3 just starts during these start-up circuit 21 energisings, and heating module 1 is parallel to this start-up circuit 21, and its DC power supply changed by the power supply of this start-up circuit 21 and provide, and makes this heating module 1 just begin to produce heat when operating system 22 entrys into service of this electric equipment 3.

See also shown in Figure 10ly, be the seventh embodiment of the present invention, its structure is roughly identical with this first embodiment, and difference only is that the circuit board 2 of this embodiment is an adapter, and and is communicated with motherboard in this electric equipment 3.

Claims

1. the heating module of a circuit board, it is characterized in that: this heating module comprises:

One metal oxide semiconductcor field effect transistor, it has a fin, and the heat that this fin is produced when this metal oxide semiconductcor field effect transistor is switched on is distributed to the outside;

One direct current power supply provides a burning voltage to give this metal oxide semiconductcor field effect transistor;

One current sensor, it is serially connected with between this metal oxide semiconductcor field effect transistor and the DC power supply, flows into the current strength of this metal oxide semiconductcor field effect transistor for detecting; And

One on state resistance controller, it is in parallel with this metal oxide semiconductcor field effect transistor and this current sensor, adjust the on state resistance value of this metal oxide semiconductcor field effect transistor according to this current sensor institute current detected intensity, the critical condition of conducting not so that this metal oxide semiconductcor field effect transistor perseverance is in conducting continues to produce heat to make this metal oxide semiconductcor field effect transistor by this.

2. the heating module of circuit board according to claim 1 is characterized in that: this metal oxide semiconductcor field effect transistor quantity on the described heating module increases, and those metal oxide semiconductcor field effect transistors are state in parallel.

3. the heating module of circuit board according to claim 1 and 2, it is characterized in that: more comprise at least one conducting strip, this conducting strip combines with the fin of this metal oxide semiconductcor field effect transistor.

4. the heating module of circuit board according to claim 1 and 2, it is characterized in that: described circuit board is located in the electric equipment.

5. the heating module of circuit board according to claim 4 is characterized in that: described circuit board is the motherboard in this electric equipment.

6. the heating module of circuit board according to claim 4, it is characterized in that: described circuit board is an adapter, and is communicated with motherboard in this electric equipment.

7. according to the heating module of claim 5 or 6 described circuit boards, it is characterized in that: described circuit board has a power circuit and a start-up circuit, this power circuit is switched on when the power line of this electric equipment is connected to power supply, and the operating system of this electric equipment just starts during this start-up circuit energising.

8. the heating module of circuit board according to claim 7, it is characterized in that: described heating module is parallel to this power circuit, and its DC power supply is directly quoted the power supply of this power circuit, so that this heating module begins to produce heat when the power line of this electric equipment is connected to the power supply of this power circuit.

9. the heating module of circuit board according to claim 7, it is characterized in that: described heating module is parallel to this start-up circuit, and its DC power supply is directly quoted the power supply of this start-up circuit, so that this heating module just begins to produce heat when the operating system entry into service of this electric equipment.