CN101226283A - High-power electro-optical modulator - Google Patents

High-power electro-optical modulator Download PDF

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Publication number
CN101226283A
CN101226283A CNA2008100502835A CN200810050283A CN101226283A CN 101226283 A CN101226283 A CN 101226283A CN A2008100502835 A CNA2008100502835 A CN A2008100502835A CN 200810050283 A CN200810050283 A CN 200810050283A CN 101226283 A CN101226283 A CN 101226283A
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electrooptical modulation
modulation crystal
crystal unit
electrooptical
optical
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CNA2008100502835A
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Chinese (zh)
Inventor
李洪祚
梁柱
刘国军
郑建平
金光勇
张剑家
詹伟达
李锐
唐颜峰
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Changchun University of Science and Technology
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Changchun University of Science and Technology
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Priority to CNA2008100502835A priority Critical patent/CN101226283A/en
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  • Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)

Abstract

The invention relates to a large power electro-optic modulator, which is composed of a semi-conductor laser (1), an optic fiber (2), a collimator (3), a polarizer (4), an electro-optic modulating crystal unit (5), a polarization analyzer (6), a laser power supply (9), a power supply (10), a light receiver (7), a light receiver (8), a driver (11) and a coding signal source (12). All portions are photoelectrically coupled via fibers, the collimator (3) uses a self-focus lens, and the electro-optic modulating crystal unit (5) uses combination modulation method and uses wideband travelling wave electrodes. The electric-optic modulator can realize 810nm laser modulation of 100-500mW output laser power and 0.5-5.0GHz modulation bandwidth, to resolve the limitation between power and bandwidth of large power electro-optic modulator. The invention can improve the output laser power of large power electro-optic modulator via reducing bandwidth some, to meet the demands of space laser communication.

Description

High-power electro-optical modulator
Technical field
The invention belongs to the laser space communication technical field, relate to a kind of electrooptic modulator.
Background technology
In laser space communication system, need modulate communication laser, high-power electro-optical modulator is exactly to utilize the electrooptical effect of electrooptical modulation crystal to realize a kind of device that laser is modulated.Introduced a kind of 406Hz combination electrode type high-speed electro-optic modulator in " photoelectron laser " publication 11 phases of calendar year 2001 " 40GHz lithium niobate electrooptic modulator " document.Introduced a kind of 100GHz high speed waveguide type electrooptic modulator in 2002 31 volumes of " photon journal " publication 0Z2 phase " the 100GHz complex travelling-wave electrode lithium niobate electrooptic modulator " document.The research method and the development trend of two-forty electrooptic modulator have been introduced in " laser and infrared " publication the 33rd volume the 1st phase " progress of high speed of polymerization thing electrooptic modulator " document.The CN1299472 patent has been introduced the high-speed electro-optic modulator that is applied to optical-fiber laser communication, and the CN2566298 patent has been introduced electrode structure high speed lithium niobate electrooptic modulator.Because the attenuation characteristic of laser in propagation in atmosphere, the preferred 810nm of optical maser wavelength, and the power of high-power electro-optical modulator and bandwidth mutual restriction, though the electrooptic modulator bandwidth of introducing in the above-mentioned document is very high, but the output laser power is less than 10mW, the modulated laser wavelength is not at 810nm series, is not suitable for remote free space, the near space laser communication needs to optical maser wavelength and power.
Summary of the invention
The present invention is to provide high-power electro-optical modulator, this high-power electro-optical modulator is to modulate at the laser of 810nm series wavelength, satisfying under the prerequisite of laser space communication to bandwidth requirement, improve the output laser power, high-power electro-optical modulator output laser power 100mW-500mW, modulation band-width 0.5GHz-5.0GHz.
High-power electro-optical modulator structure of the present invention is seen Fig. 1, this high-power electro-optical modulator also has optical receiver 7, optical receiver 8, driver 11, source coded signal 12 to constitute by semiconductor laser 1, optical fiber 2, collimating apparatus 3, the polarizer 4, electrooptical modulation crystal unit 5, analyzer 6, laser power supply 9, power supply 10; The high-power electro-optical modulator each several part adopts optical fiber and photoelectricity coupling, constitutes a close-loop feedback control system; Collimating apparatus 3 adopts GRIN Lens; Electrooptical modulation crystal unit 5 adopts N electrooptical modulation crystal " combination modulation " mode, and adopts the broadband traveling wave electrode, and N=2m, m are natural number;
Semiconductor laser 1 is connected with collimating apparatus 3 by optical fiber 2, semiconductor laser 1 emitted laser is by collimating apparatus 3 back integers, optical fiber 2 makes semiconductor laser 1 and collimating apparatus 3 realize the optical fiber coupling, has improved the transfer efficiency of laser, and collimating apparatus 3 adopts GRIN Lens;
The polarizer 4 is connected with electrooptical modulation crystal unit 5, electrooptical modulation crystal unit 5 is connected with analyzer 6, electrooptical modulation crystal unit 5 adopts " combination modulation " mode, electrooptical modulation crystal unit 5 contains above-mentioned N electrooptical modulation crystal, N electrooptical modulation crystalline size is identical, shape all is a rectangular parallelepiped, the optical axis of N electrooptical modulation crystal is vertically placed, placement electrooptical modulation crystal has reduced because the drift that phase delay that natural birefringence causes and temperature cause like this, become polarized light by collimating apparatus 3 emitted laser through behind the polarizer 4, polarized light obtains modulation after by electrooptical modulation crystal unit 5, and the polarized light after the modulation is through delivering to the use unit of subordinate behind the analyzer 6;
From the light path of the light beam of the full aperture outgoing of the outgoing end face of electrooptical modulation crystal unit 5 as shown in Figure 2, the refractive index of the polarizer 4 and the polarizer 6 is n, the equivalent light path L of the polarizer 4 and the polarizer 6 1For: 8/n, electrooptical modulation crystal refractive index are n o, its equivalent light path L 2For: 40/n o, the equivalent light path L ' from the end face of collimating apparatus 3 to electrooptical modulation crystal unit 5 planes of incidence is: L 1+ L 2+ (30-8-2 ), the equivalent light path L '+L from collimating apparatus 3 end faces to electrooptical modulation crystal unit 5 exit facets 2
The polarizer 4 and optical receiver 7 photoelectricity are of coupled connections, electrooptical modulation crystal unit 5 is connected with driver 11 usefulness coaxial cables for high frequency, analyzer 6 and optical receiver 7 photoelectricity are of coupled connections, and optical receiver 7 is connected with driver 11 usefulness coaxial cables for high frequency respectively with optical receiver 8;
Laser power supply 9 is connected with semiconductor laser 1 usefulness coaxial cable for high frequency, and laser power supply 9 provides power supply for semiconductor laser 1;
Source coded signal 12 is connected with driver 11 usefulness coaxial cables for high frequency, source coded signal 12 provides high frequency, high-power square wave AC signal for driver 11, driver 11 output signals are added on the electrooptical modulation crystal unit 5 by coaxial cable for high frequency and special electrode, can be according to source coded signal 12, change the electro-optical characteristic of electrooptical modulation crystal unit 5, thereby the modulation polarizer 4 is sent to the polarized light of electrooptical modulation crystal unit 5;
Power supply 10 is connected with laser power supply 9, source coded signal 12 and driver 11 usefulness leads respectively, and power supply 10 provides power supply for laser power supply 9, source coded signal 12 and driver 11;
The design of broadband traveling wave electrode and the method for making of electrooptical modulation crystal unit 5, modulation voltage and modulation band-width are considered in the design synthesis of electrode, and consider the impedance matching, export license of electrode and the load influence to bandwidth and half-wave voltage;
The optical feedback signal of electrooptical modulation crystal unit 5 is realized the real-time control to quiescent point, because automatic deviation control, the quiescent point of modulator will keep automatically, but because the variation of environment temperature can produce reverse drift, or the dielectric heating phenomena of crystal appears owing to the high frequency continuous wave signal, it is unstable that quiescent point can become, in order to keep the quiescent point of expectation, light samples signal that enters electrooptical modulation crystal unit 5 and the light samples signal that leaves modulator are received with optical receiver 7 and optical receiver 8, change into electric signal, form a closed loop electro-optical feedback control system;
Driver 11 and source coded signal 12 are supporting, for the electrooptical modulation crystal provides square wave ac signal;
The physical construction of high-power electro-optical modulator as shown in Figure 3, by optical axis adjustment rack 15, Glan prism box 16,45 degree catoptrons 17, electrooptical modulation crystal holder 18, Glan prism box 19,45 degree catoptrons 20 constitute, the physical construction profile of whole high-power electro-optical modulator is a rectangular parallelepiped, electrooptical modulation crystal holder 18 is placed on the V-type groove, electrooptical modulation crystal holder 18 usefulness lock-screws and shell connect together, electrooptical modulation crystal unit 5 and box body insulation, adopt screw retention on electrooptical modulation crystal holder 18, Glan prism box 16,45 degree catoptrons 17, Glan prism box 19,45 degree catoptrons 20 are rectangular parallelepiped, the accurate back of adjusting is connected with lock-screw with the high-power electro-optical modulator box body, consider the stability of whole Mirror frame structure, after assembling and setting was finished, thread connection place's point glue was fixed.
Beneficial effect
High-power electro-optical modulator provided by the invention can realize exporting the 810nm series wavelength laser modulation of laser power 100mW-500mW, modulation band-width 0.5GHz-5.0GHz, solved the difficult point that high-power electro-optical modulator power and bandwidth condition each other, suitably reducing under the condition of bandwidth, improve the output laser power of high-power electro-optical modulator, be satisfied with free space, near space laser communication needs.
Description of drawings
Fig. 1 is the high-power electro-optical modulator structural representation.
Fig. 2 is an electrooptical modulation crystal unit index path.
Fig. 3 is the high-power electro-optical modulator wiring layout.
Embodiment
Embodiment 1
Semiconductor laser 1 is selected 810nm series semiconductor laser instrument for use, laser power 0.8W, laser power supply 9 is connected with semiconductor laser 1 usefulness coaxial cable for high frequency, laser power supply 9 and semiconductor laser 1 are supporting, laser power supply 9 provides power supply for semiconductor laser 1, fiber selection 100nm diameter, collimating apparatus 3 adopts GRIN Lens, semiconductor laser 1 is connected with collimating apparatus 3 by optical fiber 2, semiconductor laser 1 emitted laser is by collimating apparatus 3 back integers, optical fiber 2 makes semiconductor laser 1 and collimating apparatus 3 realize the optical fiber coupling, improved the transfer efficiency of laser, collimating apparatus 3 adopts GRIN Lens, the polarizer 4 is connected with electrooptical modulation crystal unit 5, electrooptical modulation crystal unit 5 is connected with analyzer 6, and electrooptical modulation crystal unit 5 adopts " combination modulation " mode, the material selection LiNbO of electrooptical modulation crystal unit 5 3, electrooptical modulation crystal unit 5 is made of 2 rectangular parallelepiped electrooptical modulation crystal, and electrooptical modulation crystal length and height all are 10mm, and wide 20mm vertically places optical axis.Placement electrooptical modulation crystal has reduced because the drift that phase delay that natural birefringence causes and temperature cause like this.
From the light path of the light beam of the full aperture outgoing of the outgoing end face of electrooptical modulation crystal unit 5 as shown in Figure 2.The material of the polarizer 4 and the polarizer 6 is a kalzit, and its refractive index n at wavelength 0.81 μ m place is about 1.65, the equivalent light path L of the polarizer 4 and the polarizer 6 1For: L 1=8/n=8/165=4.95 (mm).LiNbO 3Crystal is at the n at 0.81 μ m place o=2.186, its equivalent light path L 2For: L 3=40/n o=40/2.186 ≈ 18.25 (mm).From the end face of GRIN Lens to LiNbO 3The equivalent light path L ' of electrooptical modulation crystal unit 5 planes of incidence is: L '=L 1+ L 2+ (30-8-2 )=26.01 (mm).Equivalent light path L '+L from collimating apparatus 3 end faces to electrooptical modulation crystal unit exit facet 2=26.01+18.25=44.26 (mm).
The design of broadband traveling wave electrode and the method for making of electrooptical modulation crystal unit 5, modulation voltage and modulation band-width are considered in the design synthesis of electrode, and consider the impedance matching, export license of electrode and the load influence to bandwidth and half-wave voltage.
The polarizer 4 and optical receiver 7 photoelectricity are of coupled connections, electrooptical modulation crystal unit 5 is connected with driver 11 usefulness coaxial cables for high frequency, analyzer 6 and optical receiver 7 photoelectricity are of coupled connections, and optical receiver 7 is connected with driver 11 usefulness coaxial cables for high frequency respectively with optical receiver 8.Source coded signal 12 is connected with driver 11 usefulness coaxial cables for high frequency.Driver 11 and source coded signal 12 are supporting, and the ac square wave signal of peak one peak voltage 200V, frequency 500M is provided for the electrooptical modulation crystal.The optical feedback signal of electrooptical modulation crystal unit 5 is realized the real-time control to quiescent point.Because automatic deviation control, the quiescent point of modulator will keep automatically.But because the variation of environment temperature can produce reverse drift, or because the dielectric heating phenomena of crystal appears in the high frequency continuous wave signal, the quiescent point instability that can become.In order to keep the quiescent point of expectation, we receive light samples signal that enters electrooptical modulation crystal unit 5 and the light samples signal that leaves modulator with optical receiver 7 and optical receiver 8, change into electric signal, form a photoelectricity close-loop feedback control system.
The physical construction of high-power electro-optical modulator is made of optical axis adjustment rack 15, Glan prism box 16,45 degree catoptrons 17, electrooptical modulation crystal holder 18, Glan prism box 19,45 degree catoptrons 20 6 parts as shown in Figure 3.The physical construction physical dimension of whole high-power electro-optical modulator is: 40 * 60 * 150mm.Electrooptical modulation crystal holder 18 is placed on the V-type groove, and electrooptical modulation crystal holder 18 usefulness lock-screws and shell connect together, and electrooptical modulation crystal unit 5 and box body insulation adopt screw retention on electrooptical modulation crystal holder 18.Glan prism box 16,45 degree catoptrons 17, Glan prism box 19,45 degree catoptrons 20 footpaths are 10mm, and the accurate back of adjusting is connected with lock-screw with the high-power electro-optical modulator box body.Consider the stability of whole Mirror frame structure, after assembling and setting was finished, thread connection place's point glue was fixed.
The embodiment of the invention is with LiNbO 3The electrooptical effect of crystal is the basis, adopt " combination modulation " method, close-loop feedback control technology, electrooptical modulation crystal parameter optimal design and broadband traveling wave electrode designing technique, efficient coupling technique, realized the high-power electro-optical modulator of optical maser wavelength 810nm, output laser power 150mW, modulation band-width 1.0GHz.

Claims (1)

1. high-power electro-optical modulator, constitute by semiconductor laser (1), optical fiber (2), collimating apparatus (3), the polarizer (4), electrooptical modulation crystal unit (5), analyzer (6), laser power supply (9), power supply (10), it is characterized in that optical receiver (7), optical receiver (8), driver (11), source coded signal (12) constitute in addition; The high-power electro-optical modulator each several part adopts optical fiber and photoelectricity coupling, constitutes a close-loop feedback control system; Collimating apparatus (3) adopts GRIN Lens; The electrooptical modulation crystal unit
(5) adopt " combination modulation " mode of N electrooptical modulation crystal, and adopt the broadband traveling wave electrode, described N=2m, m are natural number;
Semiconductor laser (1) is connected with collimating apparatus (3) by optical fiber (2), semiconductor laser (1) emitted laser is by collimating apparatus (3) back integer, optical fiber (2) makes semiconductor laser (1) and collimating apparatus (3) realize the optical fiber coupling, and collimating apparatus (3) adopts GRIN Lens;
The polarizer (4) is connected with electrooptical modulation crystal unit (5), electrooptical modulation crystal unit (5) is connected with analyzer (6), electrooptical modulation crystal unit (5) adopts " combination modulation " mode, electrooptical modulation crystal unit (5) contains above-mentioned N electrooptical modulation crystal, N electrooptical modulation crystalline size is identical, shape all is a rectangular parallelepiped, the optical axis of N electrooptical modulation crystal is vertically placed, by becoming polarized light behind collimating apparatus (3) the emitted laser process polarizer (4), polarized light obtains modulation after by electrooptical modulation crystal unit (5), and the polarized light after the modulation is delivered to the use unit of subordinate after through analyzer (6);
Expire the light beam of aperture outgoing launches, passes through the polarizer (4) and electrooptical modulation crystal unit (5) to analyzer (6) in turn from collimating apparatus (3) from the outgoing end face of electrooptical modulation crystal unit (5), the refractive index of the polarizer (4) and the polarizer (6) is n, the equivalent light path L of the polarizer (4) and the polarizer (6) 1For: 8/n, electrooptical modulation crystal refractive index are n o, its equivalent light path L 2For: 40/n o, the equivalent light path L ' from the end face of collimating apparatus (3) to electrooptical modulation crystal unit (5) plane of incidence is: L 1+ L 2+ (30-8-2 ), the equivalent light path L '+L from collimating apparatus (3) end face to electrooptical modulation crystal unit (5) exit facet 2
The polarizer (4) and optical receiver (7) photoelectricity are of coupled connections, electrooptical modulation crystal unit (5) is connected with coaxial cable for high frequency with driver (11), analyzer (6) and optical receiver (7) photoelectricity are of coupled connections, and optical receiver (7) is connected with coaxial cable for high frequency with driver (11) respectively with optical receiver (8);
Laser power supply (9) is connected with coaxial cable for high frequency with semiconductor laser (1), and laser power supply (9) provides power supply for semiconductor laser (1);
Source coded signal (12) is connected with coaxial cable for high frequency with driver (11), source coded signal (12) provides high frequency, high-power square wave AC signal for driver (11), driver (11) output signal is added on the electrooptical modulation crystal unit (5) by coaxial cable for high frequency and special electrode, can be according to source coded signal (12), change the electro-optical characteristic of electrooptical modulation crystal unit (5), thereby the modulation polarizer (4) is sent to the polarized light of electrooptical modulation crystal unit (5);
Power supply (10) is connected with lead with laser power supply (9), source coded signal (12) and driver (11) respectively, and power supply (10) is that laser power supply (9), source coded signal (12) and driver (11) provide power supply;
The light samples signal of electrooptical modulation crystal unit (5) receives with optical receiver (7) and optical receiver (8) with the light samples signal that leaves modulator, changes into electric signal, forms a closed loop electro-optical feedback control system, realizes the real-time control to quiescent point;
Driver (11) and source coded signal (12) are supporting, for the electrooptical modulation crystal provides square wave ac signal;
The physical construction of high-power electro-optical modulator is by optical axis adjustment rack (15), Glan prism box (16), 45 degree catoptrons (17), electrooptical modulation crystal holder (18), Glan prism box (19), 45 degree catoptrons (20) constitute, the physical construction profile of whole high-power electro-optical modulator is a rectangular parallelepiped, electrooptical modulation crystal holder (18) is placed on the V-type groove, electrooptical modulation crystal holder (18) connects together with lock-screw and shell, electrooptical modulation crystal unit (5) and the insulation of electrooptical modulation crystal holder (18) box body, adopt screw retention on electrooptical modulation crystal holder (18), Glan prism box (16), 45 degree catoptrons (17), Glan prism box (19), 45 degree catoptrons (20) are rectangular parallelepiped, and accurate adjustment back and high-power electro-optical modulator box body are connected and fixed with lock-screw.
CNA2008100502835A 2008-01-22 2008-01-22 High-power electro-optical modulator Pending CN101226283A (en)

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Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102780524A (en) * 2012-08-09 2012-11-14 中国人民解放军国防科学技术大学 Signal emitter device based on electrodeless ultraviolet communication and method
CN106019642A (en) * 2016-08-15 2016-10-12 桂林创研科技有限公司 Electro-optical modulation device
CN111142276A (en) * 2019-05-10 2020-05-12 杭州奥创光子技术有限公司 Double-mechanical shutter laser pulse train selection and power regulation device and working process thereof
CN112311473A (en) * 2019-08-02 2021-02-02 京瓷株式会社 Optical fiber power supply system
CN112311474A (en) * 2019-08-02 2021-02-02 京瓷株式会社 Optical fiber power supply system and power supply side data communication device of optical fiber power supply system

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102780524A (en) * 2012-08-09 2012-11-14 中国人民解放军国防科学技术大学 Signal emitter device based on electrodeless ultraviolet communication and method
CN106019642A (en) * 2016-08-15 2016-10-12 桂林创研科技有限公司 Electro-optical modulation device
CN111142276A (en) * 2019-05-10 2020-05-12 杭州奥创光子技术有限公司 Double-mechanical shutter laser pulse train selection and power regulation device and working process thereof
CN112311473A (en) * 2019-08-02 2021-02-02 京瓷株式会社 Optical fiber power supply system
CN112311474A (en) * 2019-08-02 2021-02-02 京瓷株式会社 Optical fiber power supply system and power supply side data communication device of optical fiber power supply system
CN112311473B (en) * 2019-08-02 2023-07-28 京瓷株式会社 Optical fiber power supply system
CN112311474B (en) * 2019-08-02 2024-01-09 京瓷株式会社 Optical fiber power supply system and power supply side data communication device of optical fiber power supply system

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Open date: 20080723