CN106019642A - Electro-optical modulation device - Google Patents
Electro-optical modulation device Download PDFInfo
- Publication number
- CN106019642A CN106019642A CN201610669192.4A CN201610669192A CN106019642A CN 106019642 A CN106019642 A CN 106019642A CN 201610669192 A CN201610669192 A CN 201610669192A CN 106019642 A CN106019642 A CN 106019642A
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- electro
- crystal
- optical modulation
- optical
- source module
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/03—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on ceramics or electro-optical crystals, e.g. exhibiting Pockels effect or Kerr effect
- G02F1/0305—Constructional arrangements
Abstract
The invention provides an electro-optical modulation device which comprises a semiconductor laser, a collimator, a polarizer, a driving source module, an electro-optical modulation crystal and an analyzer. The device mainly aims at the 800nm wave band, the modulation rate ranges from 100 Mbps to 500 Mbps, and maximum optical power output is larger than 0.5 w. The semiconductor laser is connected with the collimator through an optical fiber, lasers passing through the collimator form polarized light after passing through the polarizer, the polarized light is modulated after passing through the electro-optical modulation crystal, and the modulated polarized light is conveyed to a use unit at a next stage after passing through the analyzer. An external signal source and the driving source module are connected through a high-frequency coaxial cable, the external signal source provides high-frequency high-power square wave alternating-current signals for the driving source module, the electro-optical modulation crystal and the driving source module are connected through a high-frequency coaxial cable via a travelling wave electrode, output signals of the driving source modules are added to the electro-optical modulation crystal through a high-frequency coaxial cable and the travelling wave electrode, and the electro-optical modulation crystal feeds back signals to achieve real-time control over a quiescent operating point.
Description
Technical field
The present invention relates to modulation technique, particularly a kind of electro-optic modulation arrangement.
Background technology
Electro-optical Modulation technology is the relevant parameter with the electrooptic effect of some crystal as physical basis, to light
Carrying out the technology of modulation, it is mainly used in the fields such as optic communication, photoetching and laser radar.In space
In optic communication, the most all use the means that laser transmits as information, but the link of laser space communication
Distance is very remote, and laser loss in atmospheric channel is very big, so needing electrooptic modulator
Output optical power is at the order of magnitude of hundreds of mw or a few W, and this is that the high speed electro-optical in existing fiber communication is adjusted
Device processed cannot realize, and is mainly reflected in that its power is big not, speed is the fastest.
Summary of the invention
The present invention provides a kind of electro-optic modulation arrangement, solves that its power is big not, the fastest the asking of speed
Topic.
The present invention solves the problems referred to above by the following technical programs:
A kind of electro-optic modulation arrangement, including semiconductor laser, collimator, the polarizer, driving source mould
Block, Electro-optical Modulation crystal and analyzer；Described semiconductor laser outfan passes through optical fiber and collimation
The input of device is connected；The outfan of described collimator is connected with the input of the polarizer；Described
The outfan of device partially is connected with a road input of Electro-optical Modulation crystal；The output of described driving source module
End is connected with another road input of Electro-optical Modulation crystal by coaxial cable for high frequency；Described Electro-optical Modulation
The outfan of crystal is connected with the input of analyzer；The outfan of described analyzer and external optical sky
Line is connected；The input of described driving source module is connected with outside source.
Further, described driving source module include power supply, quiescent biasing automatic control circuit,
Temperature control circuit, radio-frequency power amplify integrated submodule.
Further, described Electro-optical Modulation crystal uses lithium columbate crystal cascaded structure, interwoven crystal
Overall size is 3 × 3 × 40mrn, and the size of every piece of crystal is 3 × 3 × 20mm.
Further, the described polarizer and analyzer all use Glan prism, and it is straight that Glan prism leads to bright finish
Footpath maximum can be 10mm, and extinction ratio is 10-5。
Further, described semiconductor laser uses 800nm wave band, maximum Output optical power 4.5w
High power semiconductor lasers as light source, its Output optical power continuously adjustabe.
Further, described half collimator uses the long light path GRIN Lens of 300mm, through certainly
After condenser lens carries out beam shaping and compresses, GRIN Lens exit can obtain minimum 1.4mm
Laser facula, laser beam divergent angle full-shape is 1.2 ° to the maximum.
Compared with prior art, have a characteristic that
1, high-power, two-forty Electro-optical Modulation technology directly modulation is used can to meet laser space communication
The electrooptic modulator needed；Mainly for 800nm wave band, modulation rate be 100Mbps～
The output of 500Mbps, maximum luminous power is more than 0.5w
2, for improving the Output optical power of Electro-optical Modulation, it is contemplated that the photo-damage resistance of crystal, adopt
Use efficient light channel structure, devise long light path GRIN Lens, it is achieved that collimator and the height of optical fiber
Effect is closed by Rhizoma Nelumbinis.For improving modulation rate and effectively reducing half-wave voltage, crystal is proposed twin crystal series connection
Hybrid modulation and lateral line ripple modulation system.
Accompanying drawing explanation
Fig. 1 is present configuration theory diagram.
Detailed description of the invention
Below in conjunction with embodiment, the invention will be further described, but the invention is not limited in that these are real
Execute example.
A kind of electro-optic modulation arrangement, including semiconductor laser, collimator, the polarizer, driving source mould
Block, Electro-optical Modulation crystal and analyzer.Described semiconductor laser outfan passes through optical fiber and collimation
The input of device is connected；The outfan of described collimator is connected with the input of the polarizer；Described
The outfan of device partially is connected with a road input of Electro-optical Modulation crystal；The output of described driving source module
End is connected with another road input of Electro-optical Modulation crystal by coaxial cable for high frequency；Described Electro-optical Modulation
The outfan of crystal is connected with the input of analyzer；The outfan of described analyzer and external optical sky
Line is connected；The input of described driving source module is connected with outside source.
Semiconductor laser uses 800nm wave band, the high-power half of maximum Output optical power 4.5w to lead
Body laser as light source, its Output optical power continuously adjustabe.
Collimator uses the long light path GRIN Lens of about 300mm, because semiconductor laser is defeated
Going out laser beam divergence very big, near field hot spot is difficult to compress, and is difficult to mate with manipulator entrance pupil, with
Time semiconductor laser beam second-rate, in order to realize the requirement of laser communication, need to have high
Coupling efficiency, high modulation depth and good beam quality.Long light path autohemagglutination through 300mm
After focus lens carries out beam shaping and compresses, GRIN Lens exit can obtain minimum 1.4mm
Laser facula, it addition, laser beam divergent angle full-shape is 1.2 ° to the maximum.
The polarizer and analyzer all use Glan prism, and this prism uses air-gap (soap-free emulsion polymeization) knot
Structure, inputs the light beam of a branch of unbiased, can obtain a branch of line polarized light (e light), and its transmitance is with inclined
Optical purity is the highest, and covers absorbability black glass, and wherein portioned product is also escaped window,
Therefore strong laser system it is highly suitable for.The Glan prism that the present invention uses leads to bright finish diameter maximum and can be
10mm, extinction ratio is 10-5, the extinction ratio of the present invention refers to by pairwise orthogonal polarized light after polariser
Strength ratio.
Source module is driven to include power supply, quiescent biasing automatic control circuit, temperature control circuit, radio frequency
The integrated submodule of power amplification.Drive source module and outside source supporting, carry for Electro-optical Modulation crystal
For square wave AC signal.Radio-frequency power amplifies the employing of integrated submodule to be put based on existing radio frequency integrated power
Two grades of negative feedback amplifying techniques of big device and phase-locked loop frequency stabilization technology, effectively overcome temperature, refraction
The impact on modulator performance such as rate change, quiescent biasing automatic control circuit uses bias voltage automatic
Control technology solves the impact on manipulator quiescent point of the factor such as temperature, interference.
Electro-optical Modulation crystal use lithium columbate crystal, the good in optical property of this crystal, refractive index homogeneity,
Electro-optic coefficient is big, half-wave voltage is little, high to modulated light wave transparency, absorb and scattering loss is little, and
And under External Electrical Field, the refractive index of crystal can change.Additionally, this crystal to have preferably
Physicochemical properties, such as hardness, photic damage threshold values, temperature impact etc..Apply single Electro-optical Modulation brilliant
During body, for reaching the parameters such as certain modulation depth, the half-wave voltage of needs is the highest, so can
Use the form of multiple crystalline tandem, i.e. constitute combined modulator.But amount of crystals should not be too many,
Otherwise causing transmitance the lowest or electric capacity is too big, the increase of amount of crystals simultaneously too increases setting of electrode
Meter difficulty, Electro-optical Modulation crystal the most of the present invention uses " twin crystal series connection " structure, interwoven crystal total
A size of 3 × 3 × 40mrn, the size of every piece of crystal is 3 × 3 × 20mm.
In high frequency modulated, in order to use manipulator can be operated in higher frequency, can overcome again simultaneously
The impact of transition time, the present invention uses row ripple Electro-optical Modulation mode, and this modulation system is to be believed by electric field
Number it is added on crystal with the form of row ripple, makes high frequency modulated electric field with row waveshape and light field phase interaction
With, make light wave and modulated signal have identical phase velocity, so, light wave wavefront in crystal all the time
In by whole crystallization process, the modulation voltage of experience is identical, it is possible to eliminate the transition time
Impact.Owing to the high-frequency electric field in most of transmission lines is mainly cross direction profiles, so the present invention
The modulation of row ripple main use transverse modulation mode.
The work process of the present invention is: semiconductor laser is connected with collimator by optical fiber, collimation
Device uses GRIN Lens, and Electro-optical Modulation crystal uses " twin crystal series connection " structure, collimator launch
Laser after the polarizer, become polarized light, polarized light by being modulated after Electro-optical Modulation crystal,
Polarized light after modulation delivers to the use unit of subordinate, Electro-optical Modulation crystal and driving after analyzer
Source module is connected by traveling wave electrode coaxial cable for high frequency, and outside source and driving source module are high
High frequency coaxial cable is connected, and outside source provides the exchange of high frequency, high-power square wave for driving source module
Signal, drives source module output signal to be added to Electro-optical Modulation by coaxial cable for high frequency and traveling wave electrode brilliant
Body, Electro-optical Modulation crystal optical feedback signal realizes the real-time control to quiescent point, drives source module
Supporting with outside source, provide square wave AC signal for Electro-optical Modulation crystal.
Claims (6)
1. an electro-optic modulation arrangement, it is characterised in that:
Including semiconductor laser, collimator, the polarizer, driving source module, Electro-optical Modulation crystal with
And analyzer；
Described semiconductor laser outfan is connected with the input of collimator by optical fiber；Described standard
The straight outfan of device is connected with the input of the polarizer；The outfan of the described polarizer is brilliant with Electro-optical Modulation
Ti mono-road input is connected；The outfan of described driving source module passes through coaxial cable for high frequency and electric light
Another road input of modulation crystal is connected；The outfan of described Electro-optical Modulation crystal is defeated with analyzer
Enter end to be connected；The outfan of described analyzer is connected with external optical antenna；Described driving source module
Input is connected with outside source.
A kind of electro-optic modulation arrangement the most according to claim 1, it is characterised in that drive described in:
Dynamic source module includes that power supply, quiescent biasing automatic control circuit, temperature control circuit, radio-frequency power are put
Big integrated submodule.
A kind of electro-optic modulation arrangement the most according to claim 1, it is characterised in that: described electricity
Light modulation crystal uses lithium columbate crystal cascaded structure, and the overall size of interwoven crystal is 3 × 3 × 40mrn,
The size of every piece of crystal is 3 × 3 × 20mm.
A kind of electro-optic modulation arrangement the most according to claim 1, it is characterised in that: described
Device and analyzer partially all uses Glan prism, and it can be 10mm that Glan prism leads to bright finish diameter maximum, disappears
Light ratio is 10-5。
A kind of electro-optic modulation arrangement the most according to claim 1, it is characterised in that: described half
Conductor laser uses 800nm wave band, the high-power semiconductor laser of maximum Output optical power 4.5w
Device as light source, its Output optical power continuously adjustabe.
A kind of electro-optic modulation arrangement the most according to claim 1, it is characterised in that: described half
Collimator uses the long light path GRIN Lens of 300mm, carries out beam shaping through GRIN Lens
After compression, GRIN Lens exit can obtain the laser facula of minimum 1.4mm, laser light
Beam divergence angle full-shape is 1.2 ° to the maximum.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610669192.4A CN106019642A (en) | 2016-08-15 | 2016-08-15 | Electro-optical modulation device |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610669192.4A CN106019642A (en) | 2016-08-15 | 2016-08-15 | Electro-optical modulation device |
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| CN106019642A true CN106019642A (en) | 2016-10-12 |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108092713A (en) * | 2017-12-11 | 2018-05-29 | 东南大学 | Indoor communications modulating device, communication means and system based on daylight source |
| CN108761851A (en) * | 2018-08-09 | 2018-11-06 | 中国电子科技集团公司第二十六研究所 | A kind of polarization maintaining optical fibre high speed electro-optical device |
| CN110907136A (en) * | 2019-11-21 | 2020-03-24 | 山西大学 | Temperature-controllable electro-optic amplitude modulator and test method |
| CN112505653A (en) * | 2020-11-23 | 2021-03-16 | 杭州蓝芯科技有限公司 | Light source, depth camera and laser radar based on electro-optical modulation |
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| JPH07226713A (en) * | 1994-02-10 | 1995-08-22 | Toshiba Corp | Optical communication system |
| CN101216616A (en) * | 2008-01-09 | 2008-07-09 | 南京航空航天大学 | High-heat stability electro-optic modulator |
| CN101226282A (en) * | 2008-01-22 | 2008-07-23 | 长春理工大学 | Electro-optical modulator |
| CN101226283A (en) * | 2008-01-22 | 2008-07-23 | 长春理工大学 | High-power electro-optical modulator |
| JP2011027908A (en) * | 2009-07-23 | 2011-02-10 | Anritsu Corp | Optical modulator module |
| CN104038282A (en) * | 2014-05-29 | 2014-09-10 | 四川大学 | Lithium niobate crystal external modulation driving device |
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2016
- 2016-08-15 CN CN201610669192.4A patent/CN106019642A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH07226713A (en) * | 1994-02-10 | 1995-08-22 | Toshiba Corp | Optical communication system |
| CN101216616A (en) * | 2008-01-09 | 2008-07-09 | 南京航空航天大学 | High-heat stability electro-optic modulator |
| CN101226282A (en) * | 2008-01-22 | 2008-07-23 | 长春理工大学 | Electro-optical modulator |
| CN101226283A (en) * | 2008-01-22 | 2008-07-23 | 长春理工大学 | High-power electro-optical modulator |
| JP2011027908A (en) * | 2009-07-23 | 2011-02-10 | Anritsu Corp | Optical modulator module |
| CN104038282A (en) * | 2014-05-29 | 2014-09-10 | 四川大学 | Lithium niobate crystal external modulation driving device |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108092713A (en) * | 2017-12-11 | 2018-05-29 | 东南大学 | Indoor communications modulating device, communication means and system based on daylight source |
| CN108092713B (en) * | 2017-12-11 | 2020-03-31 | 东南大学 | Indoor communication modulation device, communication method and system based on sunlight source |
| CN108761851A (en) * | 2018-08-09 | 2018-11-06 | 中国电子科技集团公司第二十六研究所 | A kind of polarization maintaining optical fibre high speed electro-optical device |
| CN110907136A (en) * | 2019-11-21 | 2020-03-24 | 山西大学 | Temperature-controllable electro-optic amplitude modulator and test method |
| CN110907136B (en) * | 2019-11-21 | 2020-11-10 | 山西大学 | Temperature-controllable electro-optic amplitude modulator and test method |
| CN112505653A (en) * | 2020-11-23 | 2021-03-16 | 杭州蓝芯科技有限公司 | Light source, depth camera and laser radar based on electro-optical modulation |
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