CN101216663B - Backlight module accurate light guide thin film core production method - Google Patents
Backlight module accurate light guide thin film core production method Download PDFInfo
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- CN101216663B CN101216663B CN2008100192379A CN200810019237A CN101216663B CN 101216663 B CN101216663 B CN 101216663B CN 2008100192379 A CN2008100192379 A CN 2008100192379A CN 200810019237 A CN200810019237 A CN 200810019237A CN 101216663 B CN101216663 B CN 101216663B
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Abstract
The invention discloses a method for manufacturing a precise photoconductive film cavity of backlight modules, which is characterized in that: an ultraviolet laser beam is reflected on a digital micro mirror after being expanded and collimated, the digital micro mirror is controlled according to the shape of a light guide network to be produced, and reflected light etches the light guide network on the surface of an ultraviolet photoresist dry plate via a projection optical system with 4F light paths; the relative positions of the reflected light and the photoresist dry plate are changed in turn to complete the etching of each needed light guide network; and the etched photoresist dry plate is electroformed after the process of surface metallization, so as to obtain the needed light guide film cavity. By inputting the shape of the light guide network via the digital micro mirror and etching the light guide network on the photoresist dry plate directly via the ultraviolet laser, the invention can evaluate the network design and provide sample products in a rapid manner, and improve the manufacturing quality of the cavity; at the same time, the invention is propitious to the manufacture of large-sized light guide plates.
Description
Technical field
The present invention relates to the manufacture method of the die of a kind of light guide plate that is used to make the LCD backlight module or light guiding film, realize light guide plate (light directing film) die of high precision, controllable depth and site size; Die structure of the present invention is applicable to the manufacturing of the light guide plate (light directing film) in LCD display and the large tracts of land module backlight.
Background technology
In recent years, the application of LCD (LCD) more and more widely, and large tracts of land becomes its development trend.LCD itself is not luminous, and therefore, module backlight becomes provides its luminous necessary assembly.The primary structure of module backlight is as follows: light source (Light source), light guide plate (Light guide plate), diffusion barrier (diffuser), prismatic lens (prism sheet), reflecting plate (reflector).Wherein, light guide plate is converted into area source with CCFL line source or LED pointolite, it is the core leaded light device in the module, its manufacturing method thereof and technology have directly determined the performance and the price of light guide plate, therefore, all the time, constantly studying different method for manufacturing light guide plate in the industry, to obtain the product of high performance-price ratio.
In the module backlight that LCD display, mobile phone, digital camera, illumination etc. show, light guide plate is one of critical component.At present, manufacturing method of light conducting board can be divided into non-mode of printing and mode of printing, and non-mode of printing is to make the leaded light die with lattice point structure earlier, and the method with injection mo(u)lding directly produces lattice point structure on light guide plate again, and utilize this lattice point structure that photoconduction is gone out, be dispersed in the luminous zone equably.At present, the method for making of leaded light die mainly contains, and (1) adopts chemical etching or precision optical machinery portrayal method directly to carve the pattern of different flute profiles on die.(2) be the manufacture method that discloses a kind of light guiding board mould core in the Chinese patent of CN1696782A as publication number, on metal polar plate, utilize the processing procedure of little shadow to form a kind of metal level, plate one deck nickel again and form light guiding board mould core with pattern.(3) utilize manufacture of semiconductor LIGA technology (mask+etching) method, referring to accompanying drawing 1, design and produce mask plate earlier with lattice point structure, with mask plate the sheet metal that scribbles photoresist is exposed, handle the back and form show-through lattice point structure, then, carry out metal etch (corrosion), form lattice point structure in the metal surface.The production of the light guide plate of small breadth during the method for this injection mo(u)lding relatively is suitable for.
By comparison, mode of printing then is suitable for the large format light guide plate, and it is to contain high astigmatic source material (as SiO
2﹠amp; TiO
2) the printing-ink material suitably be distributed in bottom surface of light guide plate, by the printing-ink material light source is absorbed the character of diffusion again, destroy the internal communication that total reflection effect causes, light penetrates and is uniformly distributed in the luminous zone by the front, the making of printing-type light guide plate need be passed through the process of silk-screen, baking, can cause environmental pollution thus.
Comparatively speaking, be injection molded into the pattern method and have advantages such as high-quality, that precision is good, become the method for manufacturing light guide plate of present main flow.But the technical requirement of the mask design of accurate light guiding board mould core and manufacturing is quite high, and particularly difficulty is bigger when making the large format light guide plate.
Along with module backlight develops to slim, maximization direction, the requirement that reduces to light guide plate is more and more higher, when light guide plate＜0.4mm, can be called as light guiding film, perhaps light directing film, at this moment, accuracy requirement to its surface micro-structure is high, simultaneously, also requires to use white light LEDs to substitute CCFL as energy-saving light source, therefore, the lattice point structure of the higher leaded light efficient of hope acquisition and manufacturing process fast.
How to obtain high-quality light guide plate with and high efficiency, environmentally friendly processing procedure mode be the common issue that the insider studies, especially under the develop rapidly trend of LCD display, be badly in need of being resolved.
Summary of the invention
The object of the invention provides a kind of method for making of optical plate die, is fit to research and development and the optical plate of making high precision, is particularly suitable for the manufacturing of large format optical plate or light-guiding film.
For achieving the above object, the technical solution used in the present invention is: a kind of backlight module accurate light guide thin film core production method, UV laser beam is impinged upon on the digital micro-mirror through expansion bundle, collimation, according to leaded light dot shape control figure micro-reflector to be made, the projection optical system of emergent light by containing the 4F light path is in ultraviolet photoresist dry plate surface etch leaded light site; Change the relative position of emergent light and photoresist dry plate successively, finish the etching of each required leaded light site; Photoresist dry plate after the etching carries out electroforming again after surface metalation is handled, obtain required light guide thin film core.
Above, (Digital Micro-mirror Device DMD) is a kind of digitized figure entering apparatus to described digital micro-mirror, can be by computing machine according to the graphic designs requirement, the required lattice point structure figure of input on DMD is through the site picture that becomes to dwindle after the 4F optical projection system.Described photoresist dry plate can be selected the thick photoresist dry plate that scribbles SU-8 for use.Described DMD can be on the diverse location of SU-8 dry plate according to the needs of leaded light design, the site size that etching is different, different site patterns.Light guide thin film core by above-mentioned Ultra-Violet Laser etching is made both can be used for the making of light directing film, also can be directly used in module backlight, or dispose other backlight assemblies.
In the technique scheme, described UV laser beam is produced by ultraviolet laser, adopts the frequency tripling 351nm/355nm of semiconductor pumped solid-state laser, single pulse energy＞100uJ, and pulsed frequency and pulse energy are adjustable.This optical maser wavelength is in the sensitization sensitive volume of SU-8, can effectively realize etching.
In the technique scheme, described UV laser beam is after digital micro-mirror, 4F light path projection system, and what become is the picture that dwindles of the dot shape on the digital micro-mirror.
Further technical scheme is when each required leaded light site of etching respectively, according to the shape and the described digital micro-mirror of size control of the leaded light site of institute's etching.
In the technique scheme, the gluing thickness of described photoresist dry plate can be according to the Structural Design Requirement adjustment of leaded light site, and usually, its thickness range is advisable with 5～80um.
Described leaded light site is selected from the matrix groove of circle, square, V-type or U type; Site diameter 50～1000um, the degree of depth 5～80um.
In practical operation, for realizing above-mentioned manufacture method, the concrete steps that can adopt comprise:
(1) according to the thickness of light source characteristics, optical plate (film), designs the lattice point structure and the distribution of leaded light;
(2) lattice point structure is carried out data processing, become the lattice point structure that to import on the DMD;
(3) enter data on the laser ablation equipment of DMD input, the glass dry plate that is coated with SU-8 is carried out the individual element exposure, the size of exposure depends on that the design of the lattice point structure degree of depth, the size of site depend on the structure distribution of site;
(4) carry out development treatment, obtain the SU-U of embossment structure, and carry out the back post bake and handle:
(5) metalized is carried out on the SU-8 surface, carry out electroforming again and obtain the metallic nickel version;
(6) adopt the micro-nano imprint method, carry out the sample impression of optical plate (film), obtain sample, and carry out the test and the evaluation of leaded light homogeneity, leaded light efficient.Need if any revising, repeat above-mentioned steps, up to reaching satisfied project organization.
Because the employing of technique scheme, the present invention compares with the die manufacturing of optical plate in the past, possesses following difference:
(1) chemical etching of the prior art, its degree of depth is subjected to the restriction of site breadth wise dimension precision, uses the precise light guide plate for showing, and 20 microns of the minimum diameters of site, site etching depth generally can only reach 5 microns, and more deep erosion will cause the inhomogeneous of lattice point structure; Simultaneously, the site depth as shallow of chemical etching makes that the leaded light efficient of the optical plate that final production is come out is not high, and the control of the homogeneity of the chemical etching of large format is very difficult;
(2) before the present invention, adopt mask plate to carry out the site photoetching, the etching depth of site is identical, when needs are made the die of large format optical plate (film), when adopting the mask exposure copy, require very strict to the control of the proximity effect of light source homogeneity, mask plate;
(3) photomask blank is to adopt laser direct writing method (being focused into superfine single beam scan exposure) to being coated with the chromium plate exposure of photoresist, make by chemical corrosion and to obtain, net-point quality is relevant with the control of chemical corrosion, the whole mask fabrication cycle is long, all the more so under the large format situation, manufacturing cost is higher simultaneously.
Compare the advantage of the manufacture method of accurate light guide thin film core among the present invention with it:
(1) adopt Ultra-Violet Laser as light source, it is miniature to carry out optics by the figure to DMD input, directly on SU-8, carry out the exposure of lattice point structure one by one, this is a kind of parallel direct-writing technology, got rid of in the mask exposure process in the former mask lithography method, the proximity effect of mask quality and exposure is to the uneven influence of net-point quality;
(2) can make situation according to the light conducting plate structure design and processes, adjust network point distribution and shape and structure, thereby, reach the high-quality purpose that goes out sample fast.
(3) adopt the Ultra-Violet Laser projection lithography can realize site exposure one by one, the site degree of depth and size on the control diverse location, thus reach more even, more high efficiency light guide structure, be more suitable in designing at led light source;
(4) thickness range of SU-8 can be controlled at 5～80um, like this, for the optical plate of different leaded light thickness, can adopt the site of different depth to carry out the leaded light design;
(5) site size: 5um～1000um can adjust in real time according to designing requirement.Usually, be example with 16 microns pixel DMD, dwindle with 10 magnification optical systems, the minimum resolution of luminous point is 1.6 microns on SU-8; If adopt more large-numerical aperture (NA) microcobjective, then graphics resolution is better, and the pixel count of DMD is 1024 * 768, can realize 640 * 640 pixels in projection lithography system, but the size 1000um of maximum etching site then;
(6) network point distribution of importing on DMD can be monochromatic (two-value 0,1), and the exposure back forms the site of column up and down; Also can distribute by input gray level, then form the microstructure site of different-shape on SU-8: be specially leaded light sites such as little tapered concave, convex structure, wherein, little wimble structure characteristic dimension is: diameter is 5um-200um, and the degree of depth is 5um-30um.
Simultaneously, the die that the present invention obtains is the nickel version, and the advantage that adopts the nickel version to produce as die is:
1. because the thickness of nickel version can be controlled, laminate, available volume pressure type micro-nano imprint technology is made ultra-thin light directing film, precise structure, and stay in grade is easily controlled.
2. volume to volume micro-nano imprint mode flexible light guide plate (film) the processing procedure efficient of producing promotes greatly.
3. can realize large-sized light guide plate (film), and stay in grade; Because the site produce to be what the micro-nano imprint mode by die realized, therefore, a large amount of organic solvent volatile gas body in the screen printing process can not take place.
Description of drawings
Fig. 1 is a process flow diagram of making light guiding board mould core in the prior art;
Fig. 2 is the Ultra-Violet Laser direct etching system schematic that adopts the DMD device among the embodiment one;
Fig. 3 is the schematic cross-section of the light guide plate with different depth site of acquisition among the embodiment one;
Fig. 4 is the oblique vertical view of the light guide plate of the site with different-diameter of acquisition among the embodiment two;
Fig. 5 is a process flow diagram of making light guide plate (film) die among the embodiment three.
Wherein: 1, ultraviolet diode pumped solid state laser (DPSSL); 2, beam-expanding collimation system; 3, digital micro-mirror (DMD); 4, projection optics imaging system; 5, aperture; 6, diaphragm controller; 7,4F lens combination; 8, photoresist dry plate; 9, x-y fine-limit work platform; 10, accurate driving governor; 11, computing machine.
Embodiment
Below in conjunction with drawings and Examples the present invention is further described:
Embodiment one: shown in accompanying drawing 2, adopt semiconductor pumped solid-state laser (DPSSL) 1, ultraviolet light output (frequency tripling 351nm/355nm), single pulse energy＞100uJ; The laser emitting laser beam is through beam expander colimated light system 2, and illumination is on digital micro-mirror (DMD) 3, and through projection optics imaging system 4, the figure of DMD being gone up input dwindles, and the multiplying power of dwindling depends on thing lens and microscopical focal distance ratio; The pattern imaging that dwindles is on the aperture 5 of microscopical back focal plane, and the effect of diaphragm is that retaining removes the part parasitic light, by 6 controls of diaphragm controller; Then, will dwindle pattern imaging to SU-8 photoresist dry plate 8 near the diaphragm by 4F lens combination 7.Photoresist dry plate 8 is set on the x-y fine-limit work platform 9, is controlled at by accurate driving governor 10 and does translation motion in the X-Y plane.Total system is by computing machine 11 control runnings.
Lens material in the above-mentioned laser etching system is the fused quartz glass manufacturing; Catoptron is to have the be all-trans medium coating of characteristic of ultraviolet.
Accompanying drawing 2 is for carrying out the Ultra-Violet Laser DMD etching straight-writing system synoptic diagram of optical plate lattice point structure etching.By changing the laser explosure time (the perhaps quantity of laser pulse), can obtain the microstructure site of different exposures.Accompanying drawing 3 is the sectional views of lattice point structure with light guide plate of same diameter, the different etching degree of depth.
Among this embodiment, site vary in diameter 20～1000um, site depth H=5um～30um.
During making, comprise the following steps:
(1) lattice point structure and the distribution of design leaded light;
(2) lattice point structure is carried out data processing, become the lattice point structure that to import on the DMD;
(3) enter data on the laser ablation equipment of DMD input, the glass dry plate that is coated with SU-8 is carried out the individual element exposure, the size of exposure depends on that the design of the lattice point structure degree of depth, the size of site depend on the structure distribution of site; Adjust bondline thickness, the laser explosure amount of SU-8, can on the SU-8 dry plate, obtain the site of different depth, adjust the dimension of picture and the shape that are input on the DMD, can adjust the site size and the shape of final etching;
(4) carry out development treatment, obtain the SU-U of embossment structure;
(5) metalized is carried out on the SU-8 surface, carry out electroforming again and obtain the metallic nickel version;
(6) adopt the micro-nano imprint method, carry out the sample impression of optical plate (film), obtain sample, and carry out the test and the evaluation of leaded light homogeneity, leaded light efficient.Need if any revising, repeat above-mentioned steps, up to reaching satisfied project organization.
Embodiment two: adopt semiconductor pumped solid-state laser (DPSSL), ultraviolet light output (frequency tripling 351nm/355nm), single pulse energy＞100uJ.The laser emitting laser beam is through beam expander, collimated light path, and illumination is on digital micro-mirror (DMD), and through projection optical system, the figure of DMD being gone up input dwindles, and the multiplying power of dwindling depends on thing lens and microscopical focal distance ratio.The pattern imaging that dwindles is on the diaphragm of microscopical back focal plane, and the effect of diaphragm is that retaining removes the part parasitic light.Then, though by the 4F lens combination with near the little pattern imaging the diaphragm to SU-8 photoresist dry plate.Go up the change of graphics shape of input and the difference of gray scale by DMD, can change the light distribution in light spot shape or the hot spot, thereby, the site of different surfaces shape, different flute profiles can be obtained.Accompanying drawing 4 is the oblique vertical views of light guide plate that have the leaded light site of circular microlens flute profile after the etching, site diameter D=20～200um.When changing the site diameter, but also real time altering light spot form, laser beam energy, the leaded light site that is used to make difformity, different depth.
Embodiment three: with the example that is made as of mobile phone display screen optical plate, referring to accompanying drawing 5, introduce the processing step that the present invention makes light guide plate (film) die in detail.(1) the light guide structure zone is determined in design according to application requirements, draw pattern,, utilize the network point distribution in design software design leaded light zone, site according to light source characteristic, utilize the briliancy and evenly of the site of optical simulation software assessment design, and further optimization is done in the site.Determine parameters such as site size, the degree of depth.(2) network point distribution after will designing and the site Parameters Transformation may command file that becomes laser ablation equipment.(3) regulate laser ablation equipment light path, set relevant parameter, on the SU-8 dry plate, carry out etching.(4) carry out development treatment, and carry out electroforming, obtain the metallic nickel version; (5) usefulness nickel version on PC or PMMA, impresses the lattice point structure of photoconduction by micro-nano imprint; (6) the briliancy test as LED, is carried out in configuration sidelight source on light guide plate (film) surface, test structure can compare with the software simulation result.
Adopt above-mentioned technological process, etching makes the light-leading film that can be used for cell phone keyboard on SU-8, thickness 0.1mm, site 30um～100um, degree of depth 5um～30um.
Adopt above-mentioned technological process, design and produce two kinds of light-leading films that are used for PDA display backlight module.This module backlight adopts side illuminated, thickness 120um, site size 20um～250um, degree of depth 5um～20um.
Embodiment four: adopt semiconductor pumped solid-state laser (DPSSL), ultraviolet light output (frequency tripling 351nm/355nm), single pulse energy＞100uJ.The laser emitting laser beam is through beam expander, collimated light path, and illumination is on digital micro-mirror (DMD), and through projection optical system, the figure of DMD being gone up input dwindles, and the multiplying power of dwindling depends on thing lens and microscopical focal distance ratio.On location of aperture, place scattering sheet, miniature figure has the 4F lens combination to be imaged onto on the SU-8 photoresist dry plate through after the scattering sheet.Like this, formed the microstructure with diffusion on lattice point structure, the optical plate of helped living different photoconductive properties and astigmatic characteristic also helps the raising of the quality of micro-nano imprint.Site diameter D=40～500um, the degree of depth is at 2～10um.
Claims (6)
1. backlight module accurate light guide thin film core production method, it is characterized in that: UV laser beam is impinged upon on the digital micro-mirror through expansion bundle, collimation, according to leaded light dot shape control figure micro-reflector to be made, the projection optical system of emergent light by containing the 4F light path is in ultraviolet photoresist dry plate surface etch leaded light site; Change the relative position of emergent light and photoresist dry plate successively, finish the etching of each required leaded light site; Photoresist dry plate after the etching carries out electroforming again after surface metalation is handled, obtain required light guide thin film core.
2. backlight module accurate light guide thin film core production method according to claim 1, it is characterized in that: described UV laser beam is produced by ultraviolet laser, adopt the frequency tripling 351nm/355nm of semiconductor pumped solid-state laser, single pulse energy＞100uJ, pulsed frequency and pulse energy are adjustable.
3. backlight module accurate light guide thin film core production method according to claim 1 is characterized in that: described UV laser beam is after digital micro-mirror, 4F light path projection system, and what become is the picture that dwindles of the dot shape on the digital micro-mirror.
4. backlight module accurate light guide thin film core production method according to claim 1 is characterized in that: when each required leaded light site of etching respectively, according to the shape and the described digital micro-mirror of size control of the leaded light site of institute's etching.
5. backlight module accurate light guide thin film core production method according to claim 1 is characterized in that: the gluing thickness range of described photoresist dry plate is 5～80um.
6. backlight module accurate light guide thin film core production method according to claim 5 is characterized in that: described leaded light site is selected from the matrix groove of circle, square, V-type or U type; Site diameter 50～1000um, the degree of depth 5～80um.
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| CN102566253A (en) * | 2012-02-03 | 2012-07-11 | 昆山美微电子科技有限公司 | Nickel alloy light guide plate cavity |
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| CN106950801A (en) * | 2017-04-16 | 2017-07-14 | 合肥芯碁微电子装备有限公司 | A kind of rapid edge exposure method without mask laser direct-write photoetching equipment |
| CN109119099B (en) * | 2018-07-06 | 2021-01-01 | 中国科学院上海光学精密机械研究所 | Image type parallel read-write optical information digital storage method |
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1614469A (en) * | 2003-11-05 | 2005-05-11 | 鸿富锦精密工业（深圳）有限公司 | Production for light conductive board |
| CN1696782A (en) * | 2004-05-11 | 2005-11-16 | 中强光电股份有限公司 | Method for fabricating super fine set of die for guiding light plate |
| CN101034183A (en) * | 2007-03-30 | 2007-09-12 | 苏州苏大维格数码光学有限公司 | Manufacturing method of light guiding board/ light guiding film mould core |
| CN100356230C (en) * | 2003-09-25 | 2007-12-19 | 松下电器产业株式会社 | Projector and projection method |
-
2008
- 2008-01-17 CN CN2008100192379A patent/CN101216663B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100356230C (en) * | 2003-09-25 | 2007-12-19 | 松下电器产业株式会社 | Projector and projection method |
| CN1614469A (en) * | 2003-11-05 | 2005-05-11 | 鸿富锦精密工业（深圳）有限公司 | Production for light conductive board |
| CN1696782A (en) * | 2004-05-11 | 2005-11-16 | 中强光电股份有限公司 | Method for fabricating super fine set of die for guiding light plate |
| CN101034183A (en) * | 2007-03-30 | 2007-09-12 | 苏州苏大维格数码光学有限公司 | Manufacturing method of light guiding board/ light guiding film mould core |
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