CN101216626A - Liquid crystal display panel - Google Patents
Liquid crystal display panel Download PDFInfo
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- CN101216626A CN101216626A CNA2008100000839A CN200810000083A CN101216626A CN 101216626 A CN101216626 A CN 101216626A CN A2008100000839 A CNA2008100000839 A CN A2008100000839A CN 200810000083 A CN200810000083 A CN 200810000083A CN 101216626 A CN101216626 A CN 101216626A
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Abstract
The invention discloses an LCD panel, which comprises a first substrate, a second substrate and a liquid crystal layer. A patterned filter layer is arranged on the surface of the first substrate, and the second substrate includes a plurality of pixel regions in array arrangement and a plurality of sensing regions corresponding to and partially overlapping the pixel regions one by one. The second substrate includes a pixel electrode and a sensing element. Pixel electrodes are arranged in the pixel region of the second substrate. A sensing element is arranged on the sensing regions of the second substrate and includes a sensing unit and a switch unit, wherein the sensing element includes at least one opaque layer partially overlapping the pixel electrodes. The liquid crystal layer is sandwiched between the first and the substrate substrates.
Description
Technical field
The present invention relates to a kind of display panels, relate in particular to a kind of display panels with touch controllable function.
Background technology
Generally speaking, the face equipment of touch often is used the input media as personal computer, mobile computer, personal digital assistant device (PDA) or other cohorts, wherein, information can be pointed or nib is touched on the display screen of display equipment and is transfused to.
Present touch control display is in the screen surface of general display, installs a slice contact panel again additional, and this contact panel has many different touch technologies, and four kinds of condenser type, resistance-type, acoustic wave and infrared-types etc. are for example arranged; And have one to integrate the display panel of photoinduction unit in display in addition, and please also refer to Fig. 1 and Fig. 2, comprise one first substrate 10, one second substrate 20 and be folded in liquid crystal layer therebetween 30 (as shown in Figure 2).In second substrate 20, have a plurality of pixel regions (being formed with pixel electrode 26) and a plurality of induction region 21, pixel region is arranged with matrix form, and each induction region 21 corresponding to each pixel region and not with its overlapping.Please refer to Fig. 2, be the cut-open view of induction region in the display panel 21 (asking for an interview Fig. 1).In second substrate 20, comprise a photoinduction unit 211 and a switch element 212 in this induction region 21, this switch element 212 is in order to read or to export 211 information transmitted in photoinduction unit.This photoinduction unit 211 and switch element 212 comprise second metal level 25 of a gate metal layer 221,222, a gate insulator 23, semi-conductor layer 241,242 and a patterning.Gate metal layer 221,222 is disposed at second substrate, 20 surfaces.Gate insulator 23 is disposed at gate metal layer 221,222 and second substrate, 20 surfaces.Semiconductor layer 241,242 is via behind the patterning, in the photoinduction unit 211 with switch element 212 places, be disposed at gate insulator 23 surfaces.Second metal level 25 of patterning is disposed at semiconductor layer 241,242 surfaces and gate insulator 23 surfaces, and in semiconductor layer 241, second metal level 25 on 242 surfaces in the photoinduction unit 211 with switch element 212 places can be used as respectively one source pole 252,254 and one the drain electrode 251,253.At this, the drain electrode 251 of photoinduction unit 211 can electrically connect with the drain electrode 253 of switch element 212, and the source electrode 252 of photoinduction unit 211 can electrically connect with a common line (common line) (not shown).Moreover the source electrode 254 of switch element 212 can be used as a sense wire, so that the information acquisition transmission of photoinduction unit 211.Can form the pixel electrode 26 of a patterning at last on second substrate, 20 surfaces.In a surface configuration of first substrate 10 light shield layer 11 of a patterning is arranged, this light shield layer 11 has an open region 111, and this open region 111 is corresponding to photoinduction unit 111.In addition, this first substrate 10 more disposes a filter layer 12, is disposed to be interspersed in 11 of light shield layers.In addition, also inserting and putting a liquid crystal layer 30 at first substrate 10 and 20 of second substrates, and can finish the display panels of a prior art.
At this, the opening of light shield layer can make the irradiation of photoinduction unit because of surround lighting in first substrate, and produces the required photocurrent (photo current) of touching signals.First substrate of display panel and second substrate be in when assembling, has the phenomenon that error (about 5 μ m～7 μ m) on the aligning causes skew.And the skew of light shield layer will hide pixel electrode opening zone (aperture area), causes the reduction of cell penetrance (transmittance), and then has influence on the overall brightness of display panel.
Summary of the invention
Technical matters to be solved by this invention is to provide a kind of display panels, solving in the prior art, because of first substrate and second substrate to group the time, produce the error on the aligning, and cause the problem of penetrance reduction.
For achieving the above object, technical matters to be solved by this invention is to provide a kind of display panels, comprising: one first substrate, one second substrate and a liquid crystal layer.The surface configuration of first substrate has the filter layer of a patterning.Second substrate has a plurality of pixel regions and a plurality of induction region, and those pixel regions are with arrayed, and each induction region overlaps corresponding to each pixel region and with its part.This second substrate comprises a pixel electrode and a sensing element, and pixel electrode is disposed at the pixel region of second substrate.Sensing element is disposed at the induction region of second substrate, and sensing element comprises a sensing unit and a switch element, and wherein sensing element has at least one light non-transmittable layers, overlaps with pixel electrode part.At last, liquid crystal layer is folded between first substrate and second substrate.And then finish display panels of the present invention.
In the display panels of the present invention, sensing element can also comprise a storage capacitors.
In display panels of the present invention, switch element can comprise: second metal level of a gate metal layer, a gate insulator, semi-conductor layer and a patterning.At this, this metal level is a gate metal layer, is disposed at second substrate surface.Gate insulator is disposed at the gate metal laminar surface.Semiconductor layer is disposed at the gate insulator laminar surface.And second metal level of patterning is disposed at semiconductor layer surface and gate insulator laminar surface, and second metal level in semiconductor layer surface drains as one source pole and respectively, and in second metal level of gate insulator laminar surface as a storage capacitors electrode and a data line, and source electrode and drain electrode and sensing unit electrically connect.In addition, more optionally dispose a protective seam at second layer on surface of metal.Wherein, this light non-transmittable layers can comprise a light tight metal level.
Wherein a kind of aspect of sensing unit of the present invention is a photoinduction unit, and it can comprise: second metal level of this light non-transmittable layers, an insulation course, semi-conductor layer and a patterning.At this, light non-transmittable layers is a gate metal layer, is disposed at second substrate surface, and part of grid pole metal level and pixel electrode projection overlapping.Insulation course is that a gate insulator is disposed at the gate metal laminar surface.Semiconductor layer is disposed at the gate insulator laminar surface.And second metal level of patterning is disposed at semiconductor layer surface, and second metal level is respectively as an one source pole and a drain electrode, and, source electrode and drain one of them and switch element electric connection.In addition, more optionally dispose a protective seam, and this protective seam configuration is between gate metal layer and pixel electrode at second layer on surface of metal.
Sensing unit of the present invention also can be another aspect, and it is that a photoinduction unit comprises: a gate metal layer, a gate insulator, semi-conductor layer, this light non-transmittable layers and a protective seam.Gate metal layer is disposed at second substrate surface.Gate insulator is disposed at the gate metal laminar surface.Semiconductor layer is disposed at the gate insulator laminar surface.This light non-transmittable layers is second metal level of a patterning, be disposed at semiconductor layer surface and gate insulator laminar surface, and second metal level in semiconductor layer surface drains as one source pole and respectively, source electrode and drain one of them part and pixel electrode projection overlap, and source electrode and drain electrode another and switch element electric connection wherein.And protective seam is disposed at second metal level, semiconductor layer and the gate insulator laminar surface of patterning.
In addition, among the present invention, the filter layer of first substrate can have an open region, and this open region correspondence is disposed on the sensing unit.Moreover this first substrate can also comprise and dispose a light shield layer (black matrix), its can switch element corresponding to sensing element on.Again, this first substrate can also comprise and disposes a transparent electrode layer.
Pixel electrode among the present invention can be a transparency conducting layer.For example can be indium tin oxide (indiumtin oxide, ITO), silicon indium oxide (silicon indium oxide), aluminium zinc oxide (aluminumzinc oxide, AZO), indium-zinc oxide (indium zinc oxide, IZO) or antimony tin oxide (antimony tin oxide ATO) waits material.
In the display panels of the present invention, preferable material, polysilicon layer, monocrystalline silicon layer or its combination that can be amorphous silicon of material that this semiconductor layer uses.
In an aspect of the present invention, the gate metal layer in pixel electrode and the photoinduction unit is done the part projection overlap, to finish a kind of display panels of form.
In another aspect of the present invention, second metal level of the patterning in pixel electrode and the photoinduction unit (be in the photoinduction unit formed source electrode and drain one of them) is done the part projection overlap, to finish the display panels of another kind of form.
Therefore, display panels of the present invention, first substrate and second substrate to when group, can not produce the error on the aligning, thereby, the problem that can not cause penetrance to reduce.The present invention can promote the brightness of display panels integral body.
Describe the present invention below in conjunction with the drawings and specific embodiments, but not as a limitation of the invention.
Description of drawings
Fig. 1 is the second substrate top view of the display panels of prior art;
Fig. 2 is the cut-open view of the display panels induction region of prior art;
Fig. 3 is the second substrate top view of the display panels of a preferred embodiment of the present invention;
Fig. 4 is the cut-open view of the display panels induction region of a preferred embodiment of the present invention;
Fig. 5 is the cut-open view of the display panels induction region of another preferred embodiment of the present invention.
Wherein, Reference numeral:
111: open region 12: filter layer
Substrate 21 in 20: the second: induction region
211: photoinduction unit 212: switch element
221,222: gate metal layer 23: gate insulator
241,242: 25: the second metal levels of semiconductor layer
251,253: drain electrode 252,254: source electrode
26: pixel electrode 30: liquid crystal layer
42: filter layer 421: open region
511: photoinduction unit 512: switch element
513: storage capacitors 521,522: gate metal layer
53: gate insulator 541,542: semiconductor layer
Metal level 551,553 in 55: the second: drain electrode
552,554: source electrode 555: data line
56: protective seam 57: pixel electrode
60: liquid crystal layer
Embodiment
Below by particular specific embodiment explanation embodiments of the present invention, those skilled in the art can understand other advantage of the present invention and effect easily by the content that this instructions disclosed.The present invention also can be implemented or be used by other different specific embodiment, and the every details in this instructions also can be carried out various modifications and change based on different viewpoints and application under not departing from spirit of the present invention.
Those accompanying drawings are the synoptic diagram of simplification in the embodiments of the invention.Only those accompanying drawings only show the element relevant with the present invention, and the aspect that its shown element is non-when be actual enforcement, component number, the shape equal proportion during its actual enforcement are one optionally to design, and its component placement kenel may be more complicated.
Embodiment 1
Please also refer to Fig. 3 and Fig. 4, wherein, Fig. 3 is the top view of second substrate in the display panels of one embodiment of the invention, and Fig. 4 is the display panels induction region cut-open view of one embodiment of the invention.
At this, the display panels of present embodiment comprises that one first substrate 40, one second substrate 50 and are folded in liquid crystal layer therebetween 60 (as shown in Figure 4).Please refer to Fig. 4, first substrate 40 is a transparent substrates, for example glass substrate.And in the light shield layer 41 of first substrate, 40 surface formation, one patterning.In addition, first substrate, 40 surfaces also are provided with a filter layer 42, intert to be arranged on this light shield layer 41, and this filter layer 42 have an open region 421.And, can form a transparency electrode (not shown) on filter layer 421 surfaces, the spendable material of this transparency electrode is transparent conductive material, for example present embodiment uses indium tin oxide (ITO).
Second substrate, 50 parts of present embodiment display panels, please also refer to Fig. 3 and Fig. 4, comprising: one second substrate 50 (for example can use glass substrate), a pixel electrode 57 and a sensing element 51 (including sensing unit 511, switch element 512 and storage capacitors 513).It has a plurality of pixel regions (promptly forming the zone of pixel electrode 57) and a plurality of induction region (promptly forming the zone of sensing element 51) second substrate 50, pixel region is arranged (this matrix form arrange can with reference to figure 1) with matrix form, and each induction region overlaps corresponding to this pixel region respectively and with its part.Pixel electrode 57 is disposed at the pixel region of second substrate 50.Sensing element 51 is disposed at those induction regions of second substrate 50, and this sensing element 51 comprises a sensing unit 511 and a switch element 512 at least, in present embodiment, sensing unit 511 comprises a photoinduction unit, wherein sensing element 51 has at least one light non-transmittable layers, for example be light tight metal level, with the pixel electrode 57 parts overlapping of successive process.
At this, the sensing unit 511 in the formation induction region and the step of switch element 512 please refer to Fig. 4, at first, form the gate metal layer 521,522 of patternings in second substrate, 50 surfaces.Then, form a gate insulator 53 in gate metal layer 521,522 and second substrate, 50 surfaces.Then, form semi-conductor layer 541,542 in gate insulator 53 surfaces respectively at corresponding gate metal layer 521,522 places, the material of this semiconductor layer 541,542 can be the material of amorphous silicon, polycrystalline silicon material, single crystal silicon material.Moreover, in semiconductor layer 541,542 surfaces and gate insulator 53 surperficial second metal levels 55 that form a patterning, and in semiconductor layer 541, second metal level 55 on 542 surfaces is respectively as one source pole 552,554 and one drain electrode 551,553, and in second metal level 55 on these gate insulator 53 surfaces as a capacitor storage beam (not shown) and a data line 555 (as shown in Figure 3).Wherein, sensing unit 511 and switch element 512 have source electrode 552 respectively, 554 and drain 551,553, and the drain electrode 551 of sensing unit 511 can electrically connect with the drain electrode 553 of switch element 512, and the source electrode 552 of switch element 512 is as sense wire, so that the information acquisition transmission of sensing unit 511.
In the present embodiment, second metal level 55 (being drain electrode 553, the source electrode 554 of drain electrode 551, source electrode 552 and the switch element 512 of sensing unit 511) can more form a protective seam 56 with the surface with gate insulator 53, and this protective seam 56 can be an insulating material.
Then, form a pixel electrode 57 in the surface of protective seam 56, the material of pixel electrode 57 can be transparent conductive material, is indium tin oxide (ITO) at present embodiment.
In addition, also comprise a storage capacitors 513 (as shown in Figure 3) in the sensing element 51.Sensing unit 511 in the present embodiment can electrically connect with switch element 512 through storage capacitors 513 thus.Wherein, this storage capacitors 513 can be formed by second metal level, protective seam 56 and the pixel electrode 57 of part.
In this, it should be noted that in the present embodiment light non-transmittable layers is that gate metal layer 521 has the part projection to overlap with pixel electrode 57 in the sensing unit 511.
And, filter layer 42 open regions 421 of present embodiment first substrate 40 are corresponding to sensing unit 511, and via the extension of pixel electrode 57 with gate metal layer 521, so that pixel electrode 57 can make light leak less for the influence of aperture opening ratio to overlap with gate metal layer 521 parts.
Embodiment 2
Present embodiment is identical haply with embodiment 1, but different is, please refer to Fig. 5, present embodiment is when forming second metal level 55 of patterning, the source electrode 552 of sensing unit 511 is done outside extension as light non-transmittable layers, so that it can do the projection overlapping of part with the pixel electrode 57 in the successive process.Present embodiment is not done projection with gate metal layer 521 and pixel electrode 57 and is overlapped.All the other steps are then identical with embodiment 1.
In sum, the present invention utilizes at least one metal level in sensing unit, be the extension of gate metal layer or source electrode (second metal level behind the patterning), and pixel electrode overlaps to the projection that sensing unit extends to do part, also can reduce the influence of light leak aperture opening ratio.Therefore, can solve the skew of light shield layer in the prior art and cover the pixel electrode opening zone, and influence the problem of the overall brightness of display panel.
Certainly; the present invention also can have other various embodiments; under the situation that does not deviate from spirit of the present invention and essence thereof; those of ordinary skill in the art work as can make various corresponding changes and distortion according to the present invention, but these corresponding changes and distortion all should belong to the protection domain of the appended claim of the present invention.
Claims (16)
1. a display panels is characterized in that, comprising:
One first substrate, surface configuration has the filter layer of a patterning;
One second substrate, it has a plurality of pixel regions and a plurality of induction region, and those pixel regions are with arrayed, and each induction region overlaps corresponding to this pixel region respectively and with its part, comprising:
One pixel electrode is disposed at those pixel regions of this second substrate;
One sensing element is disposed at those induction regions of this second substrate, and this sensing element comprises a sensing unit and a switch element, and wherein this sensing element has at least one light non-transmittable layers, overlaps with this pixel electrode part; And
One liquid crystal layer is folded between this first substrate and this second substrate.
2. display panels according to claim 1 is characterized in that this sensing element also comprises a storage capacitors.
3. display panels according to claim 1 is characterized in that, this switch element comprises:
One gate metal layer is disposed at this second substrate surface;
One gate insulator is disposed at this gate metal laminar surface;
Semi-conductor layer is disposed at this gate insulator laminar surface; And
Second metal level of one patterning, be disposed at this semiconductor layer surface and this gate insulator laminar surface, and second metal level in this semiconductor layer surface drains as one source pole and respectively, and in this second metal level of this gate insulator laminar surface as a storage capacitors electrode and a data line, drain one of them and this sensing unit of this source electrode and this electrically connects.
4. display panels according to claim 3 is characterized in that, this second layer on surface of metal also disposes a protective seam.
5. display panels according to claim 1 is characterized in that, this light non-transmittable layers comprises a light tight metal level.
6. display panels according to claim 1 is characterized in that, this sensing unit is a photoinduction unit, comprising:
This light non-transmittable layers is a gate metal layer, is disposed at this second substrate surface, and this gate metal layer of part and this pixel electrode projection overlapping;
One gate insulator is disposed at this gate metal laminar surface;
Semi-conductor layer is disposed at this gate insulator laminar surface; And
Second metal level of one patterning is disposed at this semiconductor layer surface, and this second metal level is respectively as an one source pole and a drain electrode, this source electrode and this drain one of them and the electric connection of this switch element.
7. display panels according to claim 6 is characterized in that, this second layer on surface of metal also disposes a protective seam, and this protective seam configuration is between this gate metal layer and this pixel electrode.
8. display panels according to claim 6 is characterized in that, this filter layer of this first substrate has an open region, and this open region correspondence is disposed on this sensing unit.
9. display panels according to claim 6 is characterized in that, this first substrate also comprises and disposes a light shield layer, on this switch element corresponding to this sensing element.
10. display panels according to claim 6 is characterized in that, this semiconductor layer be amorphous silicon layer, polysilicon layer, monocrystalline silicon layer and combination thereof one of them.
11. display panels according to claim 1 is characterized in that, this pixel electrode is a transparency conducting layer.
12. display panels according to claim 1 is characterized in that, this sensing unit is a photoinduction unit, comprising:
One gate metal layer is disposed at this second substrate surface;
One gate insulator is disposed at this gate metal laminar surface;
Semi-conductor layer is disposed at this gate insulator laminar surface;
This light non-transmittable layers, it is second metal level of a patterning, be disposed at this semiconductor layer surface and this gate insulator laminar surface, and second metal level in this semiconductor layer surface drains as one source pole and respectively, drain one of them part and this pixel electrode projection of this source electrode and this overlaps, and this source electrode and this drain electrode another and this switch element electric connection wherein; And
One protective seam is disposed at second metal level, this semiconductor layer and this gate insulator laminar surface of this patterning.
13. display panels according to claim 12 is characterized in that, this filter layer of this first substrate has an open region, and this open region correspondence is disposed on this sensing unit.
14. display panels according to claim 12 is characterized in that, this first substrate also comprises and disposes a light shield layer, on this switch element corresponding to this sensing element.
15. display panels according to claim 12 is characterized in that, this pixel electrode is a transparency conducting layer.
16. display panels according to claim 12 is characterized in that, this semiconductor layer be amorphous silicon layer, polysilicon layer, monocrystalline silicon layer and combination thereof one of them.
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| CN2008100000839A CN101216626B (en) | 2008-01-03 | 2008-01-03 | Liquid crystal display panel |
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| CN2008100000839A CN101216626B (en) | 2008-01-03 | 2008-01-03 | Liquid crystal display panel |
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Cited By (9)
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| CN101840290A (en) * | 2010-05-04 | 2010-09-22 | 友达光电股份有限公司 | Reflecting type touch-control display panel and manufacturing method thereof |
| CN102236189A (en) * | 2010-04-28 | 2011-11-09 | 北京京东方光电科技有限公司 | Basal plate for display, manufacturing method thereof and liquid crystal display |
| WO2013071717A1 (en) * | 2011-11-18 | 2013-05-23 | Tpk Touch Solutions (Xiamen) Inc. | Touch display device |
| CN106055162A (en) * | 2016-06-30 | 2016-10-26 | 京东方科技集团股份有限公司 | Display assembly and display device |
| CN107894671A (en) * | 2017-11-03 | 2018-04-10 | 惠科股份有限公司 | A kind of manufacture method of array base palte and array base palte |
| CN108346684A (en) * | 2017-12-21 | 2018-07-31 | 友达光电股份有限公司 | Pixel structure and display panel |
| CN110673380A (en) * | 2019-09-09 | 2020-01-10 | 昆山龙腾光电股份有限公司 | Display panel, manufacturing method thereof and display device |
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| WO2022033242A1 (en) * | 2020-08-12 | 2022-02-17 | 京东方科技集团股份有限公司 | Sensing substrate and electronic device |
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| KR101090254B1 (en) * | 2004-11-22 | 2011-12-06 | 삼성전자주식회사 | Display device including sensing element |
| KR101152132B1 (en) * | 2005-08-04 | 2012-06-15 | 삼성전자주식회사 | Liquid crystal display including sensing unit |
| KR101230303B1 (en) * | 2005-08-29 | 2013-02-06 | 삼성디스플레이 주식회사 | Touch sensible display device |
| CN100410749C (en) * | 2006-09-14 | 2008-08-13 | 友达光电股份有限公司 | Light sensed touch controlled type liquid crystal display |
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| CN102236189A (en) * | 2010-04-28 | 2011-11-09 | 北京京东方光电科技有限公司 | Basal plate for display, manufacturing method thereof and liquid crystal display |
| CN102236189B (en) * | 2010-04-28 | 2014-02-19 | 北京京东方光电科技有限公司 | Basal plate for display, manufacturing method thereof and liquid crystal display |
| CN101840290A (en) * | 2010-05-04 | 2010-09-22 | 友达光电股份有限公司 | Reflecting type touch-control display panel and manufacturing method thereof |
| CN101840290B (en) * | 2010-05-04 | 2012-06-20 | 友达光电股份有限公司 | Reflecting type touch-control display panel and manufacturing method thereof |
| WO2013071717A1 (en) * | 2011-11-18 | 2013-05-23 | Tpk Touch Solutions (Xiamen) Inc. | Touch display device |
| CN106055162A (en) * | 2016-06-30 | 2016-10-26 | 京东方科技集团股份有限公司 | Display assembly and display device |
| US10908445B2 (en) | 2016-06-30 | 2021-02-02 | Boe Technology Group Co., Ltd. | Display component and display device |
| WO2019085269A1 (en) * | 2017-11-03 | 2019-05-09 | 惠科股份有限公司 | Array substrate and manufacturing method therefor |
| CN107894671B (en) * | 2017-11-03 | 2021-01-08 | 惠科股份有限公司 | Array substrate and manufacturing method thereof |
| CN107894671A (en) * | 2017-11-03 | 2018-04-10 | 惠科股份有限公司 | A kind of manufacture method of array base palte and array base palte |
| US11114495B2 (en) | 2017-11-03 | 2021-09-07 | HKC Corporation Limited | Array substrate and method for manufacturing an array sunstrate |
| CN108346684A (en) * | 2017-12-21 | 2018-07-31 | 友达光电股份有限公司 | Pixel structure and display panel |
| CN110673380A (en) * | 2019-09-09 | 2020-01-10 | 昆山龙腾光电股份有限公司 | Display panel, manufacturing method thereof and display device |
| CN110673380B (en) * | 2019-09-09 | 2021-10-15 | 昆山龙腾光电股份有限公司 | Display panel, manufacturing method thereof and display device |
| WO2022033242A1 (en) * | 2020-08-12 | 2022-02-17 | 京东方科技集团股份有限公司 | Sensing substrate and electronic device |
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