CN106610751A - Embedded touch control device - Google Patents

Embedded touch control device Download PDF

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Publication number
CN106610751A
CN106610751A CN201610210306.9A CN201610210306A CN106610751A CN 106610751 A CN106610751 A CN 106610751A CN 201610210306 A CN201610210306 A CN 201610210306A CN 106610751 A CN106610751 A CN 106610751A
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China
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substrate
layer
active element
element array
array substrate
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CN201610210306.9A
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Chinese (zh)
Inventor
吴政珉
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群创光电股份有限公司
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Publication of CN106610751A publication Critical patent/CN106610751A/en

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    • GPHYSICS
    • G06COMPUTING; CALCULATING; COUNTING
    • G06FELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/01Input arrangements or combined input and output arrangements for interaction between user and computer
    • G06F3/03Arrangements for converting the position or the displacement of a member into a coded form
    • G06F3/041Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
    • GPHYSICS
    • G06COMPUTING; CALCULATING; COUNTING
    • G06FELECTRIC DIGITAL DATA PROCESSING
    • G06F2203/00Indexing scheme relating to G06F3/00 - G06F3/048
    • G06F2203/041Indexing scheme relating to G06F3/041 - G06F3/045
    • G06F2203/04107Shielding in digitiser, i.e. guard or shielding arrangements, mostly for capacitive touchscreens, e.g. driven shields, driven grounds

Abstract

The invention provides an embedded touch control device, including an active component array substrate, at least a gate driving circuit, a facing substrate, and a shielding layer. The active component array substrate is provided with a display region and a peripheral region connected with the display region. The gate driving circuits are configured on the active component array substrate and are on the peripheral region. The facing substrate is configured facing the active component array substrate. The shielding layer is configured between the active component array substrate and the facing substrate. The positive projection of the shielding layer on the active component array substrate is at least partially overlapped with the positive projection of the gate driving circuit on the active component array substrate. The embedded touch control device can effectively prevent the gate driving circuit from being damaged by electrostatic discharge.

Description

内嵌式触控装置 Embedded touch apparatus

技术领域 FIELD

[0001]本发明涉及一种触控装置,尤其涉及一种内嵌式触控装置。 [0001] The present invention relates to a touch device, and particularly to an in-cell touch device.

背景技术 Background technique

[0002]在面板设计时,直接将栅极驱动电路制作在主动元件数组基板上,以代替外接的驱动芯片的技术,被称为栅极驱动电路基板技术(Gate drive on Array,GOA)。 Driver chip [0002] In the design of the panel, a gate driving circuit directly formed on the active element array substrate, instead of the external, and is referred to as gate drive circuit board technology (Gate drive on Array, GOA). 在共平面切换式(In-Plane Switching, IPS)型态或边际场切换式(Fringe Field Switching,FFS)型态的显示设备中,栅极驱动电路通常是配置于主动元件数组基板的周边区,而其上方并没有任何的屏蔽元件,因此栅极驱动电路容易受到静电放电(Electrostatic Discharge,ESD)的损害。 In plane switching of formula (In-Plane Switching, IPS) type or marginal field switching formula (Fringe Field Switching, FFS) type display apparatus, the gate driving circuit is usually arranged in the peripheral region of the active element array substrate, and above it and there is no shielding member, and therefore vulnerable to damage the gate driving circuit ESD (electrostatic discharge, ESD) is.

[0003]为了解决上述的问题,已知通过在彩色滤光基板相对远离主动元件数组基板的外表面上形成一透明导电层,以全面性地覆盖在显示区以与门极驱动电路所在的周边区。 [0003] To solve the above problems, there is known a transparent conductive layer is formed by the outer surface of the color filter substrate relatively distant from the active element array substrate, so as to completely cover the periphery of the display region and the gate drive circuit is located Area. 上述方式确实可以避免栅极驱动电路受到静电放电的损害。 Indeed the above-described embodiment can avoid the gate drive circuit electrostatic discharge damage. 然而。 however. 在现今电子产品多功能的诉求下,通常会在显示设备中附设有触控功能,如内嵌式触控显示设备。 In today's electronic products demands versatile, usually attached to the display device has a touch function, embedded touch display device. 由于内嵌式触控显示设备具有嵌入式的触控电极,因此不可能在彩色滤光基板的外表面上设置用来屏蔽静电的全面性透明导电层,因为这样会影响元件电性及触控电极的触控功能。 Since cell touch display having a touch electrode embedded device, it is impossible to set the comprehensiveness of the transparent conductive layer of the electrostatic shield on the outer surface of the color filter substrate, because it will affect the electrical element and the touch electrode touch function. 如此一来,内嵌式触控显示设备的栅极驱动电路要如何才能有效避免静电放电的损害是一个重要的课题。 Thus, in-cell touch display device of the gate drive circuit How to effectively prevent damage from electrostatic discharge is an important issue.

发明内容 SUMMARY

[0004]本发明提供一种内嵌式触控装置,其可有效避免栅极驱动电路受到静电放电的损害。 [0004] The present invention provides an in-cell touch device, which can effectively prevent the gate driving circuit electrostatic discharge damage.

[0005]本发明的内嵌式触控装置,其包括主动元件数组基板、至少一栅极驱动电路、对向基板与屏蔽层。 Embedded touch apparatus [0005] according to the present invention, which includes an active element array substrate, at least a gate drive circuit for the shield layer to the substrate. 主动元件数组基板具有显示区与周边区,且周边区与显示区连接。 The active element array substrate having a display region and the peripheral region, the peripheral region and connected to the display region. 栅极驱动电路配置于主动元件数组基板上且位于周边区。 The gate driving circuit arranged on the active element array substrate and located in the peripheral region. 对向基板配置于主动元件数组基板的对向。 On the opposite substrate arranged on the active element array substrate. 屏蔽层配置于主动元件数组基板与对向基板之间。 Shielding layer disposed on the active element array substrate and the opposite substrate. 屏蔽层于主动元件数组基板上的正投影至少部分重叠于栅极驱动电路于主动元件数组基板上的正投影。 Shielding layer on the active element array substrate at least partially overlaps the orthogonal projection of the gate driving circuit to the orthogonal projection on the active element array substrate.

[0006]在本发明的一实施例中,上述的主动元件数组基板包括基板、多个主动元件、多个像素电极、共享电极以及接地环。 [0006] In an embodiment of the present invention, the above-described active element array substrate includes a substrate, a plurality of active elements, the plurality of pixel electrodes, the common electrode and ground ring. 主动元件数组排列于基板上且位于显示区。 An array of active elements arranged on the substrate and the display area. 像素电极配置于基板上且位于显示区,其中像素电极分别与对应的主动元件电性连接。 A pixel electrode disposed on the substrate and the display area, wherein the pixel electrodes are connected to the corresponding electrically active device. 共享电极配置于基板与像素电极之间,或是对向基板与像素电极之间且位于显示区。 The common electrode disposed between the substrate and the pixel electrode, and either of the display area between the substrate and the pixel electrode. 接地环配置于基板上且位于周边区,其中栅极驱动电路位于接地环与显示区之间。 A ground ring disposed on the substrate and located in the peripheral region, wherein the gate driving circuit is located between the ground ring and the display region.

[0007]在本发明的一实施例中,上述的屏蔽层结构性且电性连接共用电极,且屏蔽层与共用电极或像素电极属于同一膜层。 [0007] In an embodiment of the present invention, the above-described structural shielding layer and electrically connected to the common electrode, the common electrode and the shielding layer and the same film layer or the pixel electrode.

[0008]在本发明的一实施例中,上述的屏蔽层电性连接接地环,且屏蔽层与像素电极或共用电极属于同一膜层。 [0008] In an embodiment of the present invention, the above shield layer is electrically connected to the ground ring and the shielding layer and the pixel electrode or the common electrode belong to the same layer.

[0009]在本发明的一实施例中,上述的屏蔽层与像素电极或共用电极属于同一膜层,且屏蔽层电性浮置。 [0009] In an embodiment of the present invention, the above-described shield electrode or the common electrode and the pixel belonging to the same layer, and the shield is electrically floating.

[0010]在本发明的一实施例中,上述的屏蔽层配置于对向基板上,且通过导电结构与接地环电性连接。 [0010] In an embodiment of the present invention, the above-described shielding layer electrically connected to the ring disposed on the substrate, and the ground via the conductive structure.

[0011]在本发明的一实施例中,上述的屏蔽层于主动元件阵列基板上的正投影完全覆盖栅极驱动电路于主动元件阵列基板上的正投影。 [0011] In an embodiment of the present invention, the above shield layer on the active element array substrate completely covers the orthogonal projection of the gate driving circuit to the orthogonal projection of the active element array substrate.

[0012]在本发明的一实施例中,上述的屏蔽层配置于对向基板上,且屏蔽层电性浮置。 [0012] In an embodiment of the present invention, the above-described shielding layer disposed on the layer of electrically floating the substrate and the shield.

[0013]在本发明的一实施例中,上述的内嵌式触控装置还包括多个触控驱动单元与多个触控感测单元。 [0013] In an embodiment of the present invention, the above apparatus further comprises a cell type touch unit and a plurality of touch driving a plurality of touch sensing units. 触控驱动单元及触控感测单元其中的一个位于对向基板上,触控驱动单元及触控感测单元其中的另一个位于主动元件数组基板上。 Touch driving unit and the touch sensing unit which is located on the counter substrate, another touch driving unit and the touch sensing unit which is located on the active element array substrate.

[0014]在本发明的一实施例中,上述的内嵌式触控装置为自容式触控装置。 [0014] In an embodiment of the present invention, the above cell touch device is self-capacitance touch device.

[0015]基于上述,由于本发明的内嵌式触控装置具有屏蔽层,其中屏蔽层是配置于主动元件数组基板与对向基板之间,且屏蔽层于主动元件数组基板上的正投影至少部分重叠于栅极驱动电路于主动元件数组基板上的正投影。 [0015] Based on the above, since the embedded touch device according to the present invention has a shielding layer, wherein the shielding layer is disposed on the array substrate and the active device between the orthogonal projection of the substrate and the shield layer on the active element array substrate at least partially overlap orthogonal projection of the gate driving circuit on the active element array substrate. 如此一来,栅极驱动电路可受到屏蔽层的保护,以避免栅极驱动电路被静电放电现象所破坏。 Thus, the gate driving circuit can be protected by the shield layer, the gate drive circuit in order to avoid being destroyed electrostatic discharge.

[0016]为让本发明的上述特征和优点能更明显易懂,下文特举实施例,并配合附图作详细说明如下。 [0016] In order to make the above features and advantages of the invention more comprehensible, several embodiments accompanied with figures are described in detail below.

附图说明 BRIEF DESCRIPTION

[0017]图1A显示为本发明的一实施例的一种内嵌式触控装置的俯视示意图; [0017] FIG. 1A shows a schematic top view of an in-cell touch device according to an embodiment of the present invention;

[0018]图1B显示为图1A的内嵌式触控装置的局部剖面示意图; [0018] FIG. 1B is a partial cross-sectional schematic view showing the embedded touch device in FIG. 1A;

[0019]图1C显示为图1B中像素电极与共享电极的俯视示意图; [0019] Figure 1C shows a schematic top view of the pixel electrode and the common electrode of FIG. IB;

[0020]图1D显示为本发明另一实施例的内嵌式触控装置的局部剖面示意图; [0020] FIG. 1D shows a schematic partial cross-sectional view of another embedded touch device of the present invention embodiment;

[0021]图1E显示为本发明又一实施例的内嵌式触控装置的局部剖面示意图; [0021] FIG. 1E show a schematic partial cross-sectional view of the embedded touch device to still another embodiment of the present invention;

[0022]图1F显示为图1A的主动元件数组基板的俯视示意图; [0022] Fig 1F shows a top schematic view of the active element array substrate of FIG. 1A;

[0023]图2显示为本发明的一实施例的一种内嵌式触控装置的局部剖面示意图; [0023] FIG. 2 shows a schematic partial cross-sectional view an in-cell touch device according to an embodiment of the present invention;

[0024]图3显示为本发明的另一实施例的一种内嵌式触控装置的局部剖面示意图; [0024] FIG. 3 shows a schematic partial cross-sectional view of an in-cell touch device to another embodiment of the present invention;

[0025]图4显示为本发明的另一实施例的一种内嵌式触控装置的局部剖面示意图; [0025] FIG. 4 shows a schematic partial cross-sectional view of an in-cell touch device to another embodiment of the present invention;

[0026]图5显示为本发明的另一实施例的一种内嵌式触控装置的局部剖面示意图。 [0026] FIG. 5 shows a schematic partial cross-sectional view of an in-cell touch device according to another embodiment of the present invention.

[0027] 附图标记: [0027] reference numerals:

[0028] 100a、10al、100a2、100b、100c、10cU 10e:内嵌式触控装置; [0028] 100a, 10al, 100a2,100b, 100c, 10cU 10e: the embedded touch device;

[0029] 110、110'、110”:主动元件数组基板; [0029] 110, 110 ', 110 ": the active element array substrate;

[0030] 112:基板; [0030] 112: a substrate;

_] 114、114,:主动元件; _] ,: active device 114, 114;

[0032] 116:像素电极; [0032] 116: pixel electrode;

[0033] 118、118,:共享电极; [0033] 118, 118 ,: common electrode;

[0034] 118a:狭缝; [0034] 118a: slit;

[0035] 119:接地环; [0035] 119: ground ring;

[0036] 120:栅极驱动电路; [0036] 120: gate drive circuit;

[0037] 130:对向基板; [0037] 130: a counter substrate;

[0038] 140a、140al、140a2、140b、140c、140d、140e:屏蔽层; [0038] 140a, 140al, 140a2,140b, 140c, 140d, 140e: shielding layer;

[0039] 150:显示介质; [0039] 150: display medium;

[0040] 155、155a:密封胶层; [0040] 155,155a: sealant layer;

[0041 ] 160:导电结构; [0041] 160: conductive structure;

[0042] 162:具有导电性质的密封胶层; [0042] 162: sealant layer having a conductive property;

[0043] 164:导电层; [0043] 164: conductive layer;

[0044] 166:导电通孔; [0044] 166: conductive vias;

[0045] 170、175:绝缘层; [0045] 170, 175: insulating layer;

[0046] 172:开孔; [0046] 172: Hole;

[0047 ] AA:显不区; [0047] AA: no significant areas;

[0048] BB:周边区; [0048] BB: peripheral zone;

[0049] A、A':主动层; [0049] A, A ': the active layer;

[0050] D、D':漏极; [0050] D, D ': drain electrode;

[0051 ] D1:内层介电层; [0051] D1: inner dielectric layer;

[0052] G、G':栅极; [0052] G, G ': a gate;

[0053] G1、GI':栅绝缘层; [0053] G1, GI ': a gate insulating layer;

[0054] S、S':源极; [0054] S, S ': source electrode;

[0055] T:触控单元。 [0055] T: the touch unit.

具体实施方式 Detailed ways

[0056]现将详细地参考本发明的示范性实施例,示范性实施例的实例说明于附图中。 [0056] Reference is now made in detail to the present exemplary embodiment of the invention, examples of the exemplary embodiments illustrated in the accompanying drawings. 只要有可能,相同元件符号在附图和描述中用来表示相同或相似部分。 Wherever possible, the same reference numbers used in the description and the drawings refer to the same or like parts.

[0057]图1A显示为本发明的一实施例的一种内嵌式触控装置的俯视示意图。 [0057] FIG. 1A shows a schematic top view of an in-cell touch device according to an embodiment of the present invention. 图1B显示为图1A的内嵌式触控装置的局部剖面示意图。 1B shows a schematic partial cross-sectional view of the embedded touch device in FIG. 1A. 为了方便说明起见,图1A与图1B中有省略显示部分元件。 For convenience of explanation, FIGS. 1A and 1B, there are omitted a display element portion. 请同时参考图1A与图1B,在本实施例中,内嵌式触控装置10a包括主动元件数组基板110、至少一栅极驱动电路120(图1A中示意地显示两个)、对向基板130与屏蔽层140a。 Please refer to FIGS. 1A and 1B, in the present embodiment, the embedded touch device 10a includes an active element array substrate 110, at least a gate driving circuit 120 (FIG. 1A schematically shows two), the counter substrate 130 and the shielding layer 140a. 主动元件数组基板110具有显示区AA及与显示区AA连接的周边区BB,于另一实施例中,周边区BB可为环绕显示区AA。 The active element array substrate 110 includes a display region AA and BB peripheral region connected to the display area AA, In another embodiment, the peripheral region surrounding the display region may be BB AA. 栅极驱动电路120配置于主动元件数组基板110上且位于周边区BB。 The gate driving circuit 120 is disposed on the array substrate 110 and the active element is located in the peripheral region BB. 对向基板130配置于主动元件数组基板110的对向。 The pair of active device array substrate 110 to the substrate 130. 屏蔽层140a配置于主动元件数组基板110与对向基板130之间。 Shielding layer 140a disposed between the active element array substrate 110 and the substrate 130. 屏蔽层140a于主动元件数组基板110上的正投影至少部分重叠于栅极驱动电路120于主动元件数组基板110上的正投影。 Orthogonal projection 140a shielding layer on the active element array substrate 110 at least partially overlaps the orthogonal projection of the gate driver circuit 120 on the active element array substrate 110.

[0058]详细来说,请再参考图1B,本实施例的主动元件数组基板110包括基板112、多个主动元件114(图1B示意地显示一个)、多个像素电极116(图1B示意地显示一个)、共享电极118以及接地环119。 [0058] In detail, Referring again to FIG. 1B, the active element array substrate 110 of this embodiment includes a substrate 112, a plurality of active elements 114 (FIG. 1B schematically shows a), the plurality of pixel electrodes 116 (FIG. 1B schematically a display), the common electrode 118 and the ground ring 119. 主动元件114数组排列于基板112上,位于显示区AA,且与栅极驱动电路120连接。 Active element array 114 arranged on the substrate 112, the display area AA, and is connected to the gate drive circuit 120. 每一主动元件114是由栅极G、栅绝缘层G1、主动层A、源极S与漏极D所组成。 Each active element 114 by a gate G, a gate insulating layer G1, the active layer A, a source electrode S and the drain D formed. 换言之,主动元件数组基板110可视为是薄膜晶体管数组基板。 In other words, the active element array substrate 110 may be considered as a thin film transistor array substrate. 像素电极116配置于基板112上且位于显示区AA,其中像素电极116分别与对应的主动元件114的漏极D电性连接。 The pixel electrode 116 disposed on the substrate 112 and the display area AA, wherein the pixel electrodes 116 are electrically connected to the drain D corresponds to the active element 114. 更详细的说,主动元件114上设置有绝缘层170,绝缘层170上设置有像素电极116,其中像素电极116是通过延伸至绝缘层170的开孔172内而与漏极D电性连接。 In more detail, an insulating layer 170 on the active element 114 is provided with a pixel electrode 116 on the insulating layer 170, wherein the pixel electrode 116 is electrically connected to the drain D through the aperture 172 extends into the insulating layer 170. 共享电极118配置于对向基板130与像素电极116之间且位于显示区AA,其中共享电极118于基板112上的正投影至少部分重叠于像素电极116于基板112上的正投影。 Shared counter electrode 118 is disposed between the substrate 130 and the pixel electrode 116 and the display area AA, wherein the orthographic projection of the common electrode 118 on the substrate 112 at least partially overlaps the pixel electrode 116 on the substrate 112 in orthographic projection. 于其他实施例中,共享电极118亦可配置于基板112与像素电极116之间,于此并不加以限制共享电极118的位置。 In other embodiments, the common electrode 118 may also be disposed between the substrate 112 and the pixel electrode 116, is not limited herein share the position of the electrode 118.

[0059]具体来说,请同时参考图1B与图1C,本实施例的共享电极118是配置于像素电极116的上方,且具有多个狭缝118a。 [0059] Specifically, Please refer to FIG. 1B and 1C, the common electrode 118 of the present embodiment is disposed above the pixel electrode 116, and having a plurality of slits 118a. 当然,于其他未显示的实施例中,亦可以是像素电极116位于共享电极118的上方,且像素电极116与共享电极118中至少一个可具有多个狭缝或多个分支图案。 Of course, in other embodiments not shown, the pixel electrode 116 also may be positioned above the common electrode 118, and the pixel electrode 116 and the common electrode 118 having a plurality of slits at least one or more branch pattern. 此处,共享电极118与像素电极116之间具有绝缘层175以电性隔离共享电极118与像素电极116。 Here, the common electrode 118 between the pixel electrode 116 and an insulating layer 175 to electrically isolate the pixel electrode 118 and the common electrode 116. 此外,接地环119是配置于基板112上且位于周边区BB,其中栅极驱动电路120位于接地环119与显示区AA之间。 Further, the ground ring 119 is disposed on the substrate 112 and located in the peripheral region BB, wherein the gate driving circuit 120 is located between the ground ring 119 and the display region AA.

[0060]值得一提的是,主动元件数组基板110可不限于图1B的设置方式,也可以是如以下的图1D及图1E的设置方式。 [0060] It is worth mentioning that the active element array substrate 110 may not be limited to the arrangement of FIG. 1B, the following may be as in Fig. 1D and 1E of the arrangement of FIG. 详细来说,请参考图1D与图1E,在内嵌式触控装置lOOal、内嵌式触控装置100a2中,主动元件数组基板110'、主动元件数组基板110”的主动层A'是使用低温多晶硅(LTPS),因此主动元件114'是采用上栅极式的配置方式,即主动层A'配置于基板112上,栅绝缘层GI'覆盖主动层A',栅极G'配置于栅绝缘层GI'上,内层介电层DI覆盖栅极GI,而源极S'与漏极D'配置于内层介电层DI上且贯穿内层介电层DI与栅绝缘层GI'而与主动层A'接触。此处,主动元件114'为双栅极G'的结构,但于其他实施例中,亦可为单栅极G'的结构,于此并不加以限制。 In detail, refer to FIG. 1D and 1E, the in-cell touch device lOOal, the embedded touch device 100a2, the active element array substrate 110 ', the active element array substrate 110 "in the active layer A' is used a low temperature polysilicon (LTPS), and therefore the active element 114 'is the use of the gate type configuration, i.e., the active layer a' disposed on the substrate 112, a gate insulating layer, the GI 'covering the active layer a', the gate G 'arranged in the gate insulating layer GI ', the ILD layer DI the GI to cover the gate, and the source S' and a drain D 'is disposed on the ILD layer DI and DI ILD layer through the gate insulating layer GI' and 'contacts. here, active element 114' and the active layer a is a dual-gate G 'structure, but in other embodiments, may also be single gate G' structure, which is not limited thereto.

[0061]更具体来说,图1D与图1E的差别在于,图1D中共享电极118'是设置于像素电极116与基板112之间,而屏蔽层140al结构性且电性连接共享电极118',且屏蔽层140al与共享电极118'属同一膜层。 [0061] More specifically, FIG. 1D and FIG. 1E difference is that, in FIG. 1D common electrode 118 'is disposed between the pixel electrode 112 and the substrate 116, and the shielding layer 140al structural and electrically connected to the common electrode 118' and the shield layer 140al and the common electrode 118 'of the same layer. 而图1E中共享电极118是设置于像素电极116与对向基板130之间,而屏蔽层140a2结构性且电性连接共享电极118,且屏蔽层140a2与共享电极118属同一膜层。 FIG. 1E and the common electrode 118 is disposed on the pixel electrode 116 and the counter substrate 130, and the shield structural 140a2 and electrically connected to the common electrode 118, and the shield layer 140a2 and the common electrode 118 of the same film. 再者,请参考图1F,本实例的内嵌式触控装置10a还包括多个触控单元T,其中触控单元T配置于主动元件数组基板110的显示区AA。 Furthermore, please refer to 1F, a cell touch device 10a of the present example further comprises a plurality of touch unit T, wherein the touch unit is disposed in the display region AA T active element array substrate 110. 此处,触控单元T依照其感测方式的不同而大致上区分为电阻式触控单元、电容式触控单元、光学式触控单元、声波式触控单元或是电磁式触控单元。 Here, the touch unit T according to different sensing method which broadly characterized as being a resistive touch unit, a capacitive touch unit, optical touch unit, the electromagnetic acoustic touch or touch unit cell. 需说明的是,图1F所显示的触控单元T是表示触碰感测点的位置,并不是表示触控单元T的具体结构。 It is noted that, the touch unit T shown in FIG. 1F shows the position of the touch sensing points, not showing the specific structure of the touch unit T. 举例来说,若触控单元T为互容式触控单元,则其是由多个X方向的触控驱动串行与多个Y方向的触控感测串行所组成(可互换),其中X方向的触控驱动串行与Y方向的触控感测串行可分别配置于主动元件数组基板110与对向基板130上,且X方向的触控驱动串行与Y方向的触控感测串行其中的一个与共用电极118或像素电极116属于同一膜层。 For example, if the touch unit T is the mutual capacitance means, it is a plurality of X-direction of the touch and the plurality of Y-direction drive serial touch sensing consisting serial (interchangeable) wherein the touch driving direction X and the Y-direction serial touch sensing may be respectively arranged in a serial array substrate 110 and the active device on the touch on the substrate 130, the X-direction and the Y direction drive serial touch wherein the serial control a sensing electrode 118 and the common electrode 116 or the pixel belonging to the same layer. ;若触控单元T为自容式触控单元,则仅由共同电极118进行驱动及感测的动作。 ; If T is a self-capacitance touch unit touch unit, only the operation of the drive and sensing by a common electrode 118. 由于本实施例的触控单元T是直接使用共同电极118进行驱动及感测的自容式触控装置,其不但可减少整体内嵌式触控装置I OOa的制程步骤,亦可有效降低整体内嵌式触控装置I OOa的制作成本与厚度。 Since the touch unit T according to the present embodiment is used as a common electrode 118 for driving and sensing of the self-capacitance touch device, which not only reduces the overall I OOa-cell touch device process steps, can effectively reduce the overall the manufacturing cost and the thickness of the touch device embedded in I OOa.

[0062]特别是,请再参考图1B,本实施例的屏蔽层140a具体化是结构性且电性连接共享电极118,此处屏蔽层140a与共享电极118属于同一膜层,故是使用同一光罩,可有效降低制作成本。 [0062] In particular, Referring again to Figure 1B, the present embodiment the shielding layer according to concrete structural 140a and electrically connected to the common electrode 118, where the shield 118 and the common electrode 140a belonging to the same film layer, it is using the same mask, which can effectively reduce production costs. 换言之,本实施例的屏蔽层140与共享电极118采用相同材料,如透明导电材料,SP如铟锡氧化物(indium tin oxide,ITO)、铟锌氧化物(indium zinc oxide,IZO)、氧化招锌(Al doped ΖηΟ,ΑΖΟ)、铟嫁锌氧化物(Indium-Gallium-Zinc Oxide,IGZ0)、惨嫁氧化锌(Gadoped zinc oxide,GZ0)、锌锡氧化物(Zinc-Tin Oxide,ΖΤ0)、氧化铟(Ιη2θ3)、氧化锌(ZnO)、或二氧化锡(SnO2),但并不此此为限。 In other words, according to the present embodiment the shielding layer 140 and the common electrode 118 of the same material, such as a transparent conductive material, SP such as indium tin oxide (indium tin oxide, ITO), indium zinc oxide (indium zinc oxide, IZO), oxide trick zinc (Al doped ΖηΟ, ΑΖΟ), indium-zinc oxide married (indium-Gallium-zinc oxide, IGZ0), miserable married zinc oxide (Gadoped zinc oxide, GZ0), zinc tin oxide (zinc-tin oxide, ΖΤ0), indium oxide (Ιη2θ3), zinc oxide (ZnO), or tin oxide (SnO2), but this is not limited to this. 此外,屏蔽层140a于主动元件数组基板110上的正投影具体化是完全覆盖于栅极驱动电路120于主动元件数组基板110上的正投影,也就是说,栅极驱动电路120于主动元件数组基板110上的正投影完全位于屏蔽层140a于主动元件数组基板110上的正投影内。 In addition, 140a orthographic shielding layer on the active element array substrate 110 is completely covered by concrete in the orthographic projection of the gate driving circuit 120 on the active element array substrate 110, that is, the gate drive circuit 120 to the active element array orthogonal projection on the substrate 110 completely within the orthographic projection 140a shielding layer on the active element array substrate 110. 当然,于其他未显示的实施例中,屏蔽层140a于主动元件数组基板110上的正投影亦可以是部分重叠于栅极驱动电路120于主动元件数组基板110上的正投影,于此并不加以限制。 Of course, in other embodiments not shown in, 140a orthographic shielding layer on the active element array substrate 110 may also be part of the orthogonal projection 120 overlaps the gate driving circuit on the active element array substrate 110, this is not be limited.

[0063]此外,本实施例的对向基板130具体化为彩色滤光基板,如图1A所示,对向基板130的表面积具体化是小于主动元件数组基板110的表面积。 [0063] Further, embodiments of the present embodiment, the specific surface area of ​​the color filter substrate into the substrate 130, shown in Figure 1A on the surface area of ​​the substrate 130 is less than the specific active element array substrate 110. 再者,内嵌式触控装置10a还包括显示介质150,其中显示介质150配置于主动元件数组基板110与对向基板130之间。 Further, the embedded touch device 10a further includes a display medium 150, wherein the display medium 150 is disposed on the active element array substrate 110 and the opposite substrate 130. 此处,显示介质150例如是液晶层,但并不以此为限。 Here, for example, a liquid crystal display medium layer 150, but is not limited thereto. 此外,本实施例的内嵌式触控装置10a还包括密封胶层155,配置于主动元件数组基板110与对向基板130之间,以至少将显示介质150密封于主动元件数组基板110与对向基板130之间。 Further, the embedded touch device 10a according to the present embodiment further includes a sealant layer 155, the active element disposed between the array substrate 110 and the substrate 130 to seal at least the display media 150 to the active element array substrate 110 and the counter between the substrate 130.

[0064]由于本实施例的屏蔽层140a是配置于主动元件数组基板110与对向基板130之间,且屏蔽层140a于主动元件数组基板110上的正投影重叠于栅极驱动电路120于主动元件数组基板110上的正投影。 [0064] Since the present embodiment the shielding layer 140a is disposed between the substrate 130 and active device array substrate 110, and the orthogonal projection of the mask layer 140a on the active element array substrate 110 overlap the gate driving circuit 120 to the active orthogonal projection on the element array substrate 110. 因此,相较于已知设置于彩色滤光基板的外表面上的透明导电层而言,本实施例的屏蔽层140a的设置除了不会影响触控单元T的触控功能之外,亦可使栅极驱动电路120受到屏蔽层140a的保护,可有效避免被静电放电现象所破坏。 Thus, in terms of comparison with the conventional transparent conductive layer disposed on the outer surface of the color filter substrate is provided according to the present embodiment the shielding layer 140a in addition does not affect the touch functions other than unit T, may the gate drive circuit 120 is protected by the shield layer 140a can effectively avoid being damaged by electrostatic discharge. 此外,由于本实施例的屏蔽层140a与共享电极118属于同一膜层,因此可减少光罩的使用数量,可有效降低制作成本。 Further, since the shield layer 140a and the common electrode 118 of the present embodiment belong to the same layer, thereby reducing the number of masks used, can effectively reduce the manufacturing cost.

[0065]值得一提的是,于另一未显示的实施例中,屏蔽层140a与像素电极116属于同一膜层,但屏蔽层140a与像素电极116结构上且电性上并无相连接。 [0065] It is worth mentioning that, in a further embodiment not shown, the shielding layer 140a and the pixel electrode 116 belonging to the same layer, but 140a and the upper shield layer is not electrically connected to the pixel electrode 116 on the structure. 此屏蔽层140是藉由像素电极116与共同电极118之间的绝缘层的穿孔,而与共同电极118电性连接。 This shielding layer 140 is a perforated insulating layer between the pixel electrode 118 by 116 and the common electrode 118 is electrically connected to the common electrode. 于此实施例中,由于屏蔽层140a与像素电极116属于同一膜层,因此也可以减少光罩的使用数量,可有效降低制作成本。 In this embodiment, since the shield layer 140a and the pixel electrode 116 belonging to the same film layer, it is possible to reduce the number of masks used, can effectively reduce the manufacturing cost.

[0066]在此必须说明的是,下述实施例沿用前述实施例的元件标号与部分内容,其中采用相同的标号来表示相同或近似的元件,并且省略了相同技术内容的说明。 [0066] It has to be noted that the foregoing embodiments the reference numerals followed with the following parts of embodiment, wherein the same reference numerals denote the same or similar elements, and description is omitted of the same technical content. 关于省略部分的说明可参考前述实施例,下述实施例不再重复赘述。 For a detailed description reference may be portions of the foregoing embodiments, the following examples are not repeated herein.

[0067]图2显示为本发明的一实施例的一种内嵌式触控装置的局部剖面示意图。 [0067] FIG. 2 shows a schematic partial cross-sectional view of an in-cell touch device according to an embodiment of the present invention. 请参考图2,本实施例的内嵌式触控装置10b与图1B的内嵌式触控装置10a相似,二者主要差异之处在于:本实施例的屏蔽层140b电性连接接地环119,且屏蔽层140b与像素电极116属于同一膜层。 Please refer to FIG. 2, in-cell touch device 10b of the present embodiment and the embodiment of FIG embedded touch similar apparatus 10a 1B, the major difference between the two is that: 140b electrically shielding layer of the present embodiment is connected to the ground ring 119 and the shield layer 140b and the pixel electrode 116 belonging to the same layer. 于其他未显示的实施例中,屏蔽层140b亦可以是共享电极118属于同一膜层,于此并不加以限制。 In other embodiments not shown, the shielding layer 140b is also shared electrode 118 may be the same film layer, which is not limited thereto. 于其他未显示的实施例中,亦可以是像素电极116位于共享电极118的上方。 In other embodiments not shown, the pixel electrode 116 can also be positioned above the common electrode 118. 如图2所示,虽然本实施例的屏蔽层140b与像素电极116属于同一膜层,但是屏蔽层140b并没有结构性与电性连接像素电极116。 As shown in FIG 2, although the barrier layer 140b and the pixel electrode 116 according to the present embodiment belong to the same layer, but no structural and shielding layer 140b is electrically connected to the pixel electrode 116. 此外,屏蔽层140b于主动元件数组基板110上的正投影具体化是完全覆盖栅极驱动电路120于主动元件数组基板110上的正投影。 Further, the orthogonal projection of the shielding layer 140b on the active element array substrate 110 is completely covered by concrete gate drive circuit 120 to the orthogonal projection of the active element array substrate 110. 当然,于其他未显示的实施例中,屏蔽层140b于主动元件数组基板110上的正投影亦可以是部分重叠于栅极驱动电路120于主动元件数组基板110上的正投影,于此并不加以限制。 Of course, in other embodiments not shown in, 140b orthographic shielding layer on the active element array substrate 110 may also be part of the orthogonal projection 120 overlaps the gate driving circuit on the active element array substrate 110, this is not be limited.

[0068]图3显示为本发明的另一实施例的一种内嵌式触控装置的局部剖面示意图。 [0068] FIG. 3 shows a schematic partial cross-sectional view of an in-cell touch device according to another embodiment of the present invention. 请参考图3,本实施例的内嵌式触控装置10c与图1B的内嵌式触控装置10a相似,二者主要差异之处在于:本实施例的屏蔽层140c与共享电极118属于同一膜层,且屏蔽层140c电性浮置(floating)。 Please refer to FIG. 3, the embedded touch device 10c of the present embodiment and the embodiment of FIG embedded touch similar apparatus 10a 1B, the major difference between the two is that: the shielding layer 140c and the common electrode 118 of the present embodiment belong to the same embodiment layer, and the shielding layer 140c is electrically floating (floating). 也就是说,本实施例的屏蔽层140c没有与共享电极118、像素电极116或者是接地环119电性连接。 That is, the shielding layer 140c of the present embodiment is not 118, the pixel electrode 116 or ring 119 is electrically connected to the ground and the common electrode. 于其他未显示的实施例中,屏蔽层140c亦可以与像素电极116属于同一膜层,于此并不加以限制。 In other embodiments not shown, the shielding layer 140c may also belong to the same film layer 116 and the pixel electrode is not limited herein. 此外,屏蔽层140c于主动元件数组基板110上的正投影具体化是部分重叠于栅极驱动电路120于主动元件数组基板110上的正投影。 Further, 140c orthographic shielding layer on the active element 110 of the array substrate 120 is the orthogonal projection of the particular partially overlaps the gate driving circuit on the array substrate 110 of the active element. 当然,于其他未显示的实施例中,屏蔽层140c于主动元件数组基板110上的正投影亦可以是完全覆盖栅极驱动电路120于主动元件数组基板110上的正投影,于此并不加以限制。 Of course, in other embodiments not shown, the orthogonal projection of the shielding layer 140c on the active element array substrate 110 may also completely cover the orthogonal projection of the gate drive circuit 120 on the active element array substrate 110, this is not to be limit.

[0069]图4显示为本发明的另一实施例的一种内嵌式触控装置的局部剖面示意图。 [0069] FIG. 4 shows a schematic partial cross-sectional view of an in-cell touch device according to another embodiment of the present invention. 请参考图4,本实施例的内嵌式触控装置10d与图1B的内嵌式触控装置10a相似,二者主要差异之处在于:本实施例的屏蔽层140d是配置于对向基板130上,且屏蔽层140d是通过导电结构160与接地环119电性连接。 Please refer to FIG. 4, the embedded touch device 10d of the present embodiment and the embodiment of FIG embedded touch similar apparatus 10a 1B, the major difference between the two is that: the shield layer 140d of the present embodiment is arranged on the counter substrate 130, and the shield 140d is connected through the conductive structure 160 and the ring 119 is electrically grounded. 详细来说,导电结构160包括具有导电性质的密封胶层162、导电层164以及导电通孔166。 In detail, the electrically conductive structure 160 comprising a sealant layer 162 having a conductive property, the conductive layer 164 and conductive vias 166. 具有导电性质的密封胶层162配置于屏蔽层140d与导电层164之间,而导电通孔166配置于导电层164与接地环119之间。 Sealant layer 162 having conductive properties is disposed between the shield layer 140d and the conductive layer 164, the conductive vias 166 disposed between the conductive layer 164 and the ground ring 119. 屏蔽层140d依序通过具有导电性质的密封胶层162、导电层164以及导电通孔166而电性连接至接地环,此处,具有导电性质的密封胶层162的材质例如是是含有金粒或其他金属粒子的黏着材料,而导电层164例如是与像素电极116或共享电极118属于同一膜层,于此并不加以限制。 Shield 140d sequentially by the sealant layer 162 having a conductive property, the conductive layer 164 and the conductive vias 166 electrically connected to the ground ring, here having the conductive properties of the material of the sealant layer 162 containing, for example, gold particles metal particles or other adhesive material, and the conductive layer 164, for example, the pixel electrode 116 and the common electrode 118 or belong to the same film layer, which is not limited thereto.

[0070]图5显示为本发明的另一实施例的一种内嵌式触控装置的局部剖面示意图。 [0070] FIG. 5 shows a schematic partial cross-sectional view of an in-cell touch device according to another embodiment of the present invention. 请参考图5,本实施例的内嵌式触控装置10e与图1B的内嵌式触控装置10a相似,二者主要差异之处在于:本实施例的屏蔽层140e是配置于对向基板130上,且屏蔽层140e电性浮置。 Please refer to FIG. 5, the embedded touch device according to the present embodiment of FIG. 10e-cell type touch device 10a 1B is similar to the difference between the two in that: the shield layer 140e of the present embodiment is arranged on the counter substrate 130, 140e and the shield is electrically floating. 也就是说,本实施例的屏蔽层140e没有与共享电极118、像素电极116或者是接地环119电性连接。 That is, 140e shielding layer 118 is not present embodiment, the pixel electrode 116 or ring 119 is electrically connected to the ground and the common electrode. 由于密封胶层155a的材质为绝缘材料,因此屏蔽层140e并不能通过密封胶层155a与主动元件数组基板110上的元件电性连接,故屏蔽层140e处于电性浮置的状态。 Since the sealant layer 155a is made of an insulating material, and therefore can not pass through the shield layer 140e and sealant layer 155a is electrically connected to the element on the active element array substrate 110, so that the state of the shielding layer 140e is electrically floating.

[0071 ]综上所述,本发明的内嵌式触控装置具有屏蔽层,其中屏蔽层是配置于主动元件数组基板与对向基板之间,且屏蔽层于主动元件数组基板上的正投影至少部分重叠于栅极驱动电路于主动元件数组基板上的正投影。 [0071] In summary, in-cell touch device of the present invention having a shield layer, wherein the shielding layer is disposed on the array substrate and the active device between the orthogonal projection of the substrate and the shield layer on the active element array substrate at least partially overlaps the orthogonal projection of the gate driving circuit on the active element array substrate. 因此,相较于已知设置于彩色滤光基板的外表面上的透明导电层而言,本发明的屏蔽层的设置除了不会影响触控单元的触控功能之外,亦可使栅极驱动电路受到屏蔽层的保护,可有效避免被静电放电现象所破坏。 Thus, compared to the terms of the transparent conductive layer disposed on an outer surface of a known color filter substrate, the shield layer is provided in addition to the present invention does not affect the touch functions outside the cell, also the gate the driving circuit is protected by the shield layer, which can effectively avoid being damaged by electrostatic discharge. 再者,由于本发明的屏蔽层亦可以与主动元件数组基板上的像素电极和/或共享电极属于同一膜层,因此可减少光罩的使用数量,可有效降低制作成本。 Further, since the shield layer of the present invention may also belong to the same layer with the pixel electrode on the active element array substrate and / or the common electrode, thus reducing the number of masks used, can effectively reduce the manufacturing cost. 此外,本发明的屏蔽层亦可设置于对向基板上,只要屏蔽层是配置于主动元件数组基板与对向基板之间,且屏蔽层于主动元件数组基板上的正投影重叠于栅极驱动电路于主动元件数组基板上的正投影,皆属于本发明所欲保护的范围。 Further, the present invention may also shield layer disposed on the substrate, as long as the gate drive to the shielding layer is disposed on the active element array substrate and the orthogonal projection between the substrate and the shield layer on the active element array substrate overlaps orthogonal projection of the circuit on the active element array substrate, are within the scope of protection of the present invention is desired. 屏蔽层配置于主动元件数组基板与对向基板之间也可以使屏蔽层受到保护,不会因外部的刮伤而影响其屏蔽栅极驱动电路的功能,提供装置的可靠度。 Shielding layer disposed on the active element array substrate between the substrate and the reliability of the shield layer may be protected, it will not affect the shielding function of the gate driving circuit due to external scratches, providing means.

[0072]最后应说明的是:以上各实施例仅用以说明本发明的技术方案,而非对其限制;尽管参照前述各实施例对本发明进行了详细的说明,本领域的普通技术人员应当理解:其依然可以对前述各实施例所记载的技术方案进行修改,或者对其中部分或者全部技术特征进行等同替换;而这些修改或者替换,并不使相应技术方案的本质脱离本发明各实施例技术方案的范围。 [0072] Finally, it should be noted that: the above embodiments only describe the technical solutions in embodiments of the present invention, rather than limiting;. Although the embodiments of the present invention has been described in detail, those of ordinary skill in the art should appreciated: it still may be made to the technical solutions described embodiments modifications, or to some or all of the technical features equivalents; as such modifications or replacements do not cause the essence of corresponding technical solutions to depart from embodiments of the present invention range of technical solutions.

Claims (10)

1.一种内嵌式触控装置,其特征在于,包括: 主动元件数组基板,具有显示区与周边区,所述周边区与所述显示区连接; 至少一栅极驱动电路,配置于所述主动元件数组基板上,且位于所述周边区; 对向基板,配置于所述主动元件数组基板的对向;以及屏蔽层,配置于所述主动元件数组基板与所述对向基板之间,其中所述屏蔽层于所述主动元件数组基板上的正投影至少部分重叠于所述栅极驱动电路于所述主动元件数组基板上的正投影。 An embedded touch device, comprising: an active element array substrate, a display region and peripheral region, the peripheral region is connected to the display area; at least one gate drive circuit disposed in the said active element array on the substrate, and located in the peripheral zone; counter substrate, the active element array disposed on the substrate; and a shield layer disposed on the active element array substrate and the opposite substrate wherein said shielding layer to the active element array on the substrate at least partially overlap orthogonal projection of the orthogonal projection of the gate driving circuit on the active element array substrate.
2.根据权利要求1所述的内嵌式触控装置,其特征在于,所述主动元件数组基板包括: 基板; 多个主动元件,数组排列于所述基板上,位于所述显示区; 多个像素电极,配置于所述基板上,且位于所述显示区,其中所述多个像素电极分别与对应的所述多个主动元件电性连接; 共享电极,配置于所述基板与所述多个像素电极之间,或是所述对向基板与所述多个像素电极之间,且所述共享电极位于所述显示区;以及接地环,配置于所述基板上,且位于所述周边区,其中所述至少一栅极驱动电路位于所述接地环与所述显示区之间。 2. The embedded touch device according to claim 1, wherein said active element array substrate comprising: a substrate; a plurality of active elements, arranged in an array on the substrate, the display region is located; multiple pixel electrodes disposed on the substrate, and in said display region, wherein the plurality of pixel electrodes are respectively connected to a corresponding plurality of the electrically active elements; common electrode disposed on the substrate and the between a plurality of pixel electrodes, or a counter is located between the substrate and the plurality of pixel electrodes, the common electrode and the display area; and a ground ring disposed on the substrate, and located peripheral zone, wherein said at least one of the gate driving circuit is located between the ground ring and the display region.
3.根据权利要求2所述的内嵌式触控装置,其特征在于,所述屏蔽层结构性且电性连接所述共用电极,且所述屏蔽层与所述共用电极或所述多个像素电极属于同一膜层。 3. The embedded touch device according to claim 2, wherein said shield structural layer and electrically connected to the common electrode, and the shielding layer and the common electrode or the plurality of the pixel electrodes belonging to the same layer.
4.根据权利要求2所述的内嵌式触控装置,其特征在于,所述屏蔽层电性连接所述接地环,且所述屏蔽层与所述多个像素电极或所述共用电极属于同一膜层。 4. The in-cell touch apparatus according to claim 2, characterized in that said shield layer is electrically connected to the ground ring and the shielding layer and the pixel electrodes or the common electrodes belonging to the same film.
5.根据权利要求2所述的内嵌式触控装置,其特征在于,所述屏蔽层与所述多个像素电极或所述共用电极属于同一膜层,且所述屏蔽层电性浮置。 The embedded touch apparatus according to claim 2, wherein said shield electrode common to the plurality of pixel electrodes belonging to the same film layer or layers and the electrically floating shield .
6.根据权利要求2所述的内嵌式触控装置,其特征在于,所述屏蔽层配置于所述对向基板上,且通过导电结构与所述接地环电性连接。 6. embedded touch apparatus according to claim 2, wherein said shielding layer disposed on the counter substrate, and the ground via the conductive structure is electrically connected to the ring.
7.根据权利要求2所述的内嵌式触控装置,其特征在于,还包括: 多个触控驱动单元及多个触控感测单元,所述多个触控驱动单元及所述多个触控感测单元其中的一个位于所述对向基板上,所述多个触控驱动单元及所述多个触控感测单元其中的另一个位于所述主动元件阵列基板上。 7. embedded touch apparatus according to claim 2, characterized in that, further comprising: a plurality of touch drive unit and a plurality of touch sensing unit, the driving unit and the plurality of multi-touch a touch sensing unit which is located on the opposing substrate, and a touch driving unit of the plurality of touch sensing units wherein the other of said plurality of active elements positioned on said array substrate.
8.根据权利要求1所述的内嵌式触控装置,其特征在于,所述屏蔽层于所述主动元件阵列基板上的正投影完全覆盖所述栅极驱动电路于所述主动元件阵列基板上的正投影。 8. embedded touch apparatus according to claim 1, wherein said active element array on the substrate layer on the active element array substrate completely covers the orthogonal projection of the gate driving circuit shield orthographic on.
9.根据权利要求1所述的内嵌式触控装置,其特征在于,所述屏蔽层配置于所述对向基板上,且所述屏蔽层电性浮置。 9. embedded touch apparatus according to claim 1, wherein the shielding layer is disposed in said electrically floating layer on the counter substrate, and the shield.
10.根据权利要求1所述的内嵌式触控装置,其特征在于,所述内嵌式触控装置为自容式触控装置。 10. The embedded touch apparatus according to claim 1, wherein said embedded device is a self-capacitance touch touch device.
CN201610210306.9A 2015-10-23 2016-04-06 Embedded touch control device CN106610751A (en)

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