CN101207128A - Capacitor apparatus and method of manufacture - Google Patents
Capacitor apparatus and method of manufacture Download PDFInfo
- Publication number
- CN101207128A CN101207128A CNA2006101477831A CN200610147783A CN101207128A CN 101207128 A CN101207128 A CN 101207128A CN A2006101477831 A CNA2006101477831 A CN A2006101477831A CN 200610147783 A CN200610147783 A CN 200610147783A CN 101207128 A CN101207128 A CN 101207128A
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- Prior art keywords
- dielectric
- layer
- capacitor
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- manufacture method
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- 239000003990 capacitor Substances 0.000 title claims abstract description 48
- 238000000034 method Methods 0.000 title claims abstract description 20
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 19
- 238000009792 diffusion process Methods 0.000 claims abstract description 21
- 230000004888 barrier function Effects 0.000 claims abstract description 11
- 239000000463 material Substances 0.000 claims description 23
- 239000000758 substrate Substances 0.000 claims description 18
- 239000004065 semiconductor Substances 0.000 claims description 15
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 14
- 238000007254 oxidation reaction Methods 0.000 claims description 12
- 229910052741 iridium Inorganic materials 0.000 claims description 10
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 claims description 10
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 claims description 10
- 230000003647 oxidation Effects 0.000 claims description 9
- 150000004767 nitrides Chemical group 0.000 claims description 6
- 229910052697 platinum Inorganic materials 0.000 claims description 6
- 229910001925 ruthenium oxide Inorganic materials 0.000 claims description 6
- WOCIAKWEIIZHES-UHFFFAOYSA-N ruthenium(iv) oxide Chemical compound O=[Ru]=O WOCIAKWEIIZHES-UHFFFAOYSA-N 0.000 claims description 6
- 238000005530 etching Methods 0.000 claims description 5
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 claims description 5
- 229910010037 TiAlN Inorganic materials 0.000 claims description 4
- WOIHABYNKOEWFG-UHFFFAOYSA-N [Sr].[Ba] Chemical compound [Sr].[Ba] WOIHABYNKOEWFG-UHFFFAOYSA-N 0.000 claims description 4
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 3
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 claims description 3
- UGACIEPFGXRWCH-UHFFFAOYSA-N [Si].[Ti] Chemical compound [Si].[Ti] UGACIEPFGXRWCH-UHFFFAOYSA-N 0.000 claims description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 3
- 229920005591 polysilicon Polymers 0.000 claims description 3
- 229910001936 tantalum oxide Inorganic materials 0.000 claims description 3
- -1 nail Chemical compound 0.000 claims 8
- 239000003989 dielectric material Substances 0.000 abstract description 8
- 239000000470 constituent Substances 0.000 abstract 1
- 230000001590 oxidative effect Effects 0.000 abstract 1
- 229910052454 barium strontium titanate Inorganic materials 0.000 description 7
- 230000008021 deposition Effects 0.000 description 6
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 5
- 238000010586 diagram Methods 0.000 description 5
- 229910052760 oxygen Inorganic materials 0.000 description 5
- 239000001301 oxygen Substances 0.000 description 5
- 239000000376 reactant Substances 0.000 description 3
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000006213 oxygenation reaction Methods 0.000 description 2
- 229910052707 ruthenium Inorganic materials 0.000 description 2
- PBCFLUZVCVVTBY-UHFFFAOYSA-N tantalum pentoxide Inorganic materials O=[Ta](=O)O[Ta](=O)=O PBCFLUZVCVVTBY-UHFFFAOYSA-N 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 229910052788 barium Inorganic materials 0.000 description 1
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
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Abstract
The invention provides a capacitor device and the manufacturing method thereof. In the inveton a T-shaped capacitor device is formed, for effectively utilizing a diffusion barrier layer and a lower electrode layer to isolate the dielectric layer with high dielectric constant and the plug adapter, thus to avoid the oxygenous constituent which is contained in the dielectric layer with high dielectric constant to diffuse and enter the plug adapter and cause the oxidizing situation to occur, thereby, the application in the process of the dielectric layer with high dielectric constant is improved, and the rate of finished product which adopts the dielectric material with high dielectric constant as the capacitor component is greatly improved.
Description
Technical field
The present invention relates to a kind of capacitor device and manufacture method thereof, particularly a kind of capacitor device and manufacture method thereof of using high dielectric constant materials as the dielectric material.
Background technology
Each unit born of the same parents in internal memory (DRAM) array are made up of a N transistor npn npn (NMOS) and a capacitor.Wherein, transistor is responsible for this group DRAM unit born of the same parents' switch motion, and capacitor then is to be used for store charge, just is used for storage data.Therefore,, will make, all to be improved data interpretation that the frequency that capacitor is carried out replenishing again also can significantly reduce no matter be speed aspect or accuracy aspect if more electric charge can be stored in capacitor.
How effectively to promote charged ability, become the main target in the technological development, the carrying capacity of capacitor (Q) is proportional to electric capacity (C), and the value of electric capacity (C) then can further describe with following equation:
C＝[(k×ε×ε
0)/t]×A
Wherein ε is the dielectric constant of capacitance material, and A is the effective area of capacitor in order to store charge, and t is the used thickness of capacitance dielectric layer.
Can learn that by top equation desire increases the charged ability of electric capacity, can realize by the dielectric material that makes the apparatus high-k, therefore the barium strontium of tool high-k (Barium Strontium Titanate, BST), tantalum pentoxide (Tantalum Pentoxide) etc. becomes selectable preferable dielectric material.
See also shown in Figure 1ly, it is to use the cutaway view of BST as the capacitor of dielectric material at present.This kind capacitor 1 adopts the conduction material as connector 12 usually, and on the conduction material, form a barrier layer 14, with the bottom electrode 16 and connector 12 that is isolated in follow-up formation, forming a material again on bottom electrode 16 successively is the dielectric layer 18 and top electrode (not shown) of BST.
But such structure, to produce two problem points, first point: under the optimal situation based on BST deposition and annealing conditions, to make the reactant of oxygen diffuse into 12 of barrier layer 14 and connectors by the clearance wall of BST dielectric layer 18, and cause oxidation reaction, see also Fig. 2, the evolving path is represented for arrow among the figure; Second point: arts demand connector 12 and bottom electrode 16 good aiming at like this, otherwise will form as shown in Figure 3 situation, will cause part storage node (connector) to expose this moment, when causing follow-up BST deposition, easily cause the connector oxidation.
Summary of the invention
Main purpose of the present invention is, a kind of capacitor device and manufacture method thereof are provided, and it can be applicable to various dielectric materials with high-k.
Another object of the present invention is to, a kind of capacitor device and manufacture method thereof are provided, it can effectively improve the charged ability of capacitor, the usefulness of speed-up condenser running.
For reaching above-mentioned purpose, the present invention adopts following technical scheme:
A kind of capacitor device comprises: one has the Semiconductor substrate of several connectors on it; One is positioned at first inner-dielectric-ayer on the Semiconductor substrate; One is positioned at the nitride layer on first inner-dielectric-ayer; One is positioned at second inner-dielectric-ayer on the nitride layer; One runs through first inner-dielectric-ayer, nitride layer and second inner metal layer and exposes the T font groove of connector; One is positioned at the T font groove diffusion impervious layer of wall all around; One is positioned at the lower electrode layer on the diffusion impervious layer of T font groove; One is covered in the dielectric layer on lower electrode layer, diffusion impervious layer and the second inner-dielectric-ayer surface; An and upper electrode layer that is positioned on the dielectric layer.
A kind of process of capacitor, it comprises the following steps:
One Semiconductor substrate that has been formed with several connectors on it is provided; Deposition one first inner-dielectric-ayer, mononitride layer and one second inner-dielectric-ayer on Semiconductor substrate; To first inner-dielectric-ayer, mononitride layer and one second inner-dielectric-ayer etching, to form a T font groove; In T font groove, form a diffusion impervious layer and a lower electrode layer successively; On Semiconductor substrate, form a dielectric layer; And on Semiconductor substrate the deposition one upper electrode layer.
In sum, capacitor device provided by the invention and manufacture method thereof, utilize the mode of a T font groove structure, form capacitor, the dielectric layer of tool high-k is coated by lower electrode layer fully, the oxygen composition that contains that is caused with the dielectric layer Yin Teding oxygenation parameters of effectively avoiding the prior art high-k diffuses into connector, cause problems such as connector oxidation, and, when if existing connector of picture and electric capacity aligning mistake take place, connector of the present invention can not contact with the dielectric layer of tool high-k yet, therefore can not take place as existing aligning mistake, the problem that causes connector aerobic molecular diffusion to enter.
Further specify the present invention below in conjunction with drawings and Examples.
Description of drawings
Fig. 1 is the schematic diagram of existing capacitor device.
Fig. 2 is diffused between barrier layer and connector by the dielectric layer clearance wall for the reactant of existing capacitor because of oxygen, and causes the schematic diagram of oxidation reaction.
Fig. 3 is connector and bottom electrode aligning mistake, causes part storage node (connector) to expose, and when causing the subsequent dielectric layer deposition, causes the schematic diagram of connector oxidation.
Fig. 4 is a capacitor device schematic diagram of the present invention.
Fig. 5 to Fig. 8 is each step structure cutaway view of the present invention.
Figure number is to as directed
1 capacitor, 26 etch stop layers
12 connectors, 28 second inner-dielectric-ayers
14 barrier layers, 30 T font grooves
16 bottom electrodes, 32 diffusion impervious layers
18 dielectric layers, 34 lower electrode layers
20 Semiconductor substrate, 36 dielectric layers
22 connectors, 38 upper electrode layers
24 first inner-dielectric-ayers
Embodiment
The present invention is a kind of capacitor device and manufacture method thereof, it utilizes a kind of new capacitor kenel, the reactant that effectively solves existing oxygen is diffused between barrier layer and connector by the dielectric layer clearance wall of high-dielectric coefficient, and cause oxidation reaction and because of the technology alignment error, cause part storage node (connector) to expose, when causing the subsequent dielectric layer deposition, easily cause the problem of connector oxidation.
At first, see also Fig. 4, it is a capacitor device cutaway view of the present invention, includes one by capacitor device of the present invention as can be known among the figure and has the Semiconductor substrate 20 of several connectors 22 on it, and wherein the material of this connector 22 can be polysilicon; One is positioned at first inner-dielectric-ayer 24 on the Semiconductor substrate 20; One is positioned at the etch stop layer 26 on first inner-dielectric-ayer 24, and wherein the material of this etch stop layer 26 can be nitride; One is positioned at second inner-dielectric-ayer 28 on the etch stop layer 26; One runs through first inner-dielectric-ayer 24, etch stop layer 26 and second inner metal layer 28 and exposes the T font groove 30 of connector 22; One is positioned at T font groove 30 diffusion impervious layer 32 of wall all around; One is positioned at the lower electrode layer 34 on the diffusion impervious layer 32 of T font groove 30; One is covered in the dielectric layer 36 on lower electrode layer 34, diffusion impervious layer 32 and second inner-dielectric-ayer, 28 surfaces; An and upper electrode layer 38 that is positioned on the dielectric layer 36.
Now manufacture method of the present invention is described, sees also Fig. 5 to Fig. 8, be a preferred embodiment of the present invention, at each step structure cutaway view of the capacitor device of making the tool high dielectric material with regard to above-mentioned structure shown in Figure 4; As shown in the figure, manufacture method of the present invention includes the following step:
At first please be earlier with reference to Fig. 5, semi-conductive substrate 20 is provided, be formed with several connectors 22 on it, for ease of explanation the present invention, in diagram, describe a connector 22 and illustrate, then on Semiconductor substrate, deposit one first inner-dielectric-ayer 24, an etch stop layer 26 and one second inner-dielectric-ayer 28 successively.
Second inner-dielectric-ayer 28, etch stop layer 26 and first inner-dielectric-ayer 24 are carried out etching, to form a T font groove 30 that is positioned at second inner-dielectric-ayer 28, etch stop layer 26 and first inner-dielectric-ayer 24, as shown in Figure 6.In this, the mode of etching T font groove can be adopted as the mode of dual-damascene technics and be finished, and this etching mode is a prior art, it is not given unnecessary details at this.
Then, in T font groove 30, deposit a diffusion impervious layer 32 and a lower electrode layer 34 successively, and remove the diffusion impervious layer 32 and lower electrode layer 34 that is deposited on outside the T font groove 30, form structure as shown in Figure 7.Wherein, the material of this diffusion impervious layer 32 can be titanium nitride (TiN), titanium silicon nitride (TiSiN) or TiAlN (TiAlN) etc., and the material of bottom electrode 34 can be platinum (Pt), nail (Ruthenium), ruthenium-oxide/nail, iridium (Iridium), yttrium oxide/iridium etc.
See also Fig. 8, on Semiconductor substrate 20, deposit the dielectric layer 36 of a tool high dielectric constant value again, this dielectric layer 36 covered and was positioned on lower electrode layer 34 surfaces of T font groove 30 this moment, and cover on the diffusion impervious layer 32 and second inner-dielectric-ayer 28, deposit a upper electrode layer 38 that fills up this T font groove then, promptly finish a capacitor with high dielectric constant value.Wherein, the material of this upper electrode layer 38 can be for being platinum (Pt), nail (Ruthenium), ruthenium-oxide/nail, iridium (Iridium), yttrium oxide/iridium etc., and the material of this dielectric layer 34 can be barium strontium Ba
xSr
1-xTiO
3Other has the dielectric material of high dielectric constant value (Barium Strotium Titanate) or tantalum oxide etc.
In sum, capacitor device provided by the invention and manufacture method thereof, utilize the mode of a T font groove structure, form capacitor, the dielectric layer of tool high-k is coated by lower electrode layer fully, the oxygen composition that contains that is caused with the dielectric layer Yin Teding oxygenation parameters of effectively avoiding the prior art high-k diffuses into connector, cause problems such as connector oxidation, and, when if existing connector of picture and electric capacity aligning mistake take place, connector of the present invention can not contact with the dielectric layer of tool high-k yet, therefore can not take place as existing aligning mistake, the problem that causes connector aerobic molecular diffusion to enter.
Above-described embodiment only is used to illustrate technological thought of the present invention and characteristics, its purpose makes those skilled in the art can understand content of the present invention and is implementing according to this, therefore can not only limit claim of the present invention with present embodiment, be all equal variation or modifications of doing according to disclosed spirit, still drop in the claim of the present invention.
Claims (14)
1. capacitor device is characterized in that comprising:
Semi-conductive substrate has several connectors on it;
One first inner-dielectric-ayer is positioned on this Semiconductor substrate;
One etch stop layer is positioned on this first inner-dielectric-ayer;
One second inner-dielectric-ayer is positioned on this etch stop layer;
One T font groove, it runs through this first inner-dielectric-ayer, this etch stop layer and this second inner-dielectric-ayer, and described connector exposes from this T font groove bottom;
One diffusion impervious layer, it is positioned on the wall all around of this T font groove;
One lower electrode layer, it is positioned on this diffusion barrier of this T font groove;
One dielectric layer, it is covered in the surface of this lower electrode layer, this diffusion barrier and this second inner-dielectric-ayer;
One upper electrode layer, it is positioned on this dielectric layer.
2. capacitor device as claimed in claim 1 is characterized in that: the material of this diffusion barrier is one or more in titanium nitride, titanium silicon nitride or the TiAlN.
3. capacitor device as claimed in claim 1 is characterized in that: the material of this bottom electrode is selected from one or more in platinum, nail, ruthenium-oxide, oxidation nail, iridium, yttrium oxide, the yttrium oxide.
4. capacitor device as claimed in claim 1 is characterized in that: the material of this upper electrode layer is selected from one or more in platinum, nail, ruthenium-oxide, oxidation nail, iridium, yttrium oxide, the yttrium oxide.
5. capacitor device as claimed in claim 1 is characterized in that: the material of this dielectric layer is selected from one or more in barium strontium, the tantalum oxide.
6. capacitor device as claimed in claim 1 is characterized in that: the material of this connector is a polysilicon.
7. capacitor device as claimed in claim 1 is characterized in that: the material of this etch stop layer is a nitride.
8. the manufacture method of a capacitor is characterized in that may further comprise the steps:
Semi-conductive substrate is provided, is formed with several connectors on it;
On this Semiconductor substrate, deposit one first inner-dielectric-ayer, an etch stop layer and one second inner-dielectric-ayer successively;
This second inner-dielectric-ayer, this etch stop layer and this first inner-dielectric-ayer are carried out etching, to form a T font groove;
In this T font groove, form a diffusion barrier and a lower electrode layer successively;
On this Semiconductor substrate, form a dielectric layer;
The long-pending upper electrode layer in Shen on this Semiconductor substrate.
9. the manufacture method of capacitor as claimed in claim 8, it is characterized in that: the material of this diffusion barrier is selected from one or more in titanium nitride, titanium silicon nitride, the TiAlN.
10. the manufacture method of capacitor as claimed in claim 8, it is characterized in that: the material of this bottom electrode is selected from one or more in platinum, nail, ruthenium-oxide, oxidation nail, iridium, yttrium oxide, the yttrium oxide.
11. the manufacture method of capacitor as claimed in claim 8 is characterized in that: the material of this upper electrode layer is selected from one or more in platinum, nail, ruthenium-oxide, oxidation nail, iridium, yttrium oxide, the yttrium oxide.
12. the manufacture method of capacitor as claimed in claim 8 is characterized in that: the material of this dielectric layer is selected from one or more in barium strontium, the tantalum oxide.
13. the manufacture method of capacitor as claimed in claim 8 is characterized in that: the material of this connector is a polysilicon.
14. the manufacture method of capacitor as claimed in claim 8 is characterized in that: the material of this etch stop layer is a nitride.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2006101477831A CN100511685C (en) | 2006-12-22 | 2006-12-22 | Capacitor apparatus and method of manufacture |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2006101477831A CN100511685C (en) | 2006-12-22 | 2006-12-22 | Capacitor apparatus and method of manufacture |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101207128A true CN101207128A (en) | 2008-06-25 |
| CN100511685C CN100511685C (en) | 2009-07-08 |
Family
ID=39567156
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB2006101477831A Expired - Fee Related CN100511685C (en) | 2006-12-22 | 2006-12-22 | Capacitor apparatus and method of manufacture |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN100511685C (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102117809A (en) * | 2010-01-06 | 2011-07-06 | 海力士半导体有限公司 | Semiconductor device and method for manufacturing the same |
| CN103022017A (en) * | 2011-09-15 | 2013-04-03 | 英飞凌科技股份有限公司 | Semiconductor structure, semiconductor and method for making semiconductor structure |
| CN107275282A (en) * | 2011-03-17 | 2017-10-20 | 美光科技公司 | Semiconductor structure and the method for forming semiconductor structure |
-
2006
- 2006-12-22 CN CNB2006101477831A patent/CN100511685C/en not_active Expired - Fee Related
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102117809A (en) * | 2010-01-06 | 2011-07-06 | 海力士半导体有限公司 | Semiconductor device and method for manufacturing the same |
| CN107275282A (en) * | 2011-03-17 | 2017-10-20 | 美光科技公司 | Semiconductor structure and the method for forming semiconductor structure |
| CN103022017A (en) * | 2011-09-15 | 2013-04-03 | 英飞凌科技股份有限公司 | Semiconductor structure, semiconductor and method for making semiconductor structure |
Also Published As
| Publication number | Publication date |
|---|---|
| CN100511685C (en) | 2009-07-08 |
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Granted publication date: 20090708 Termination date: 20100122 |