CN101197251B - Etching apparatus for edges of substrate - Google Patents
Etching apparatus for edges of substrate Download PDFInfo
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- CN101197251B CN101197251B CN2007101643484A CN200710164348A CN101197251B CN 101197251 B CN101197251 B CN 101197251B CN 2007101643484 A CN2007101643484 A CN 2007101643484A CN 200710164348 A CN200710164348 A CN 200710164348A CN 101197251 B CN101197251 B CN 101197251B
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- 239000000758 substrate Substances 0.000 title claims abstract description 260
- 238000005530 etching Methods 0.000 title claims abstract description 73
- 238000002347 injection Methods 0.000 claims abstract description 8
- 239000007924 injection Substances 0.000 claims abstract description 8
- 238000007789 sealing Methods 0.000 claims 1
- 239000007789 gas Substances 0.000 abstract description 21
- 238000012216 screening Methods 0.000 abstract 3
- 238000000034 method Methods 0.000 description 24
- 239000010408 film Substances 0.000 description 22
- 239000010409 thin film Substances 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 3
- 238000002474 experimental method Methods 0.000 description 3
- 239000011261 inert gas Substances 0.000 description 3
- 150000002500 ions Chemical class 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 238000005452 bending Methods 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 238000000427 thin-film deposition Methods 0.000 description 2
- 239000006227 byproduct Substances 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67069—Apparatus for fluid treatment for etching for drying etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32623—Mechanical discharge control means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/334—Etching
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Drying Of Semiconductors (AREA)
Abstract
An etching apparatus comprises a chamber; a substrate supporter in the chamber; a substrate disposed on the substrate and having one of a notch zone and a flat zone, the substrate having a rim of a circular shape except in the one of the notch zone and the flat zone, wherein the rim of the substrate has a dented shape in the notch zone and a chord shape in the flat zone; a substrate-screening unit having a substantially same shape as the substrate and disposed over the substrate, the substrate-screening unit having a portion corresponding to the one of the notch zone and the flat zone, wherein the substrate-screening unit has a first diameter smaller than or equal to a second diameter of the substrate; a gas injection means supplying gases onto a periphery of the substrate; and a power supply unit supplying an RF (radio frequency) power into the chamber.
Description
The present invention advocates the rights and interests of the 2006-105829 korean patent application case of application on October 30th, 2006, and described application case is incorporated herein by reference.
Technical field
The present invention relates to a kind of substrate-treating apparatus that is used to make semiconductor device or liquid crystal indicator, and more particularly, relate to a kind of be used to the remove film of edges of substrate or the etching machines of particulate.
Background technology
In general, by with thin film deposition on the surface of substrate (for example wafer or glass), and then described film is carried out etching, thereby forms Thinfilm pattern, make semiconductor device or panel display apparatus.
During the depositing of thin film step, in fact with thin film deposition on the whole surface of substrate.Yet, during using etching mask that film is carried out etching step, mainly on the central area of substrate, film is carried out etching.Therefore, in the edge of substrate, film may keep, and the byproduct that may produce during etching step or particulate may gather.If under the situation of not removing this class film that accumulates in the edges of substrate place or particulate, carry out following step, film or particulate may peel off so, and may pollute other zone of substrate.Perhaps, substrate may bending maybe may be misalignment.
In order to solve described problem, recently, especially in the process of making semiconductor device, carried out edges of substrate has been carried out etched additional technique.
With a kind of edges of substrate is carried out the dry-etching that etching method is divided into the Wet-type etching that uses etchant and uses the plasma that is produced by gas.Fig. 1 explanation uses plasma that edges of substrate is carried out etched equipment according to correlation technique.
Correlation technique etching machines 100 comprises: chamber 10, and it defines reaction compartment; Substrate supports thing 20, it is placed in the chamber 10; And gas distribution plate 30, it is placed in substrate supports thing 20 tops and has a plurality of hand-holes 32.The upper wall of gas distribution plate 30 sealed chamber 10.Exhaust line 12 is connected to the bottom of chamber 10.Substrate supports thing 20 can be by driver element 70 is mobile up and down up and down.For the edge with substrate S is exposed to plasma, the diameter of substrate supports thing 20 can be littler than the diameter of substrate S.
Hand-hole 32 is settled along the periphery of gas distribution plate 30, and is connected to etching gas supply line 40, thereby only injects etching gas around the edge of substrate S.Etching gas supply line 40 is connected to etching gas feeding unit 50.
In addition, inert gas supply line (not shown) can be connected to the core of gas distribution plate 30.When the edge to substrate S carries out etching, but inert gas supply line inert gas injecting, and therefore can prevent that the core of substrate S is etched.
Simultaneously, substrate shield unit 31 is outstanding from the lower surface of gas distribution plate 30.Substrate shield unit 31 covers the core of substrate S, and only makes the edge of substrate S be exposed to plasma.Substrate shield unit 31 can form as one with gas distribution plate 30, maybe can be individually formed and then be attached to gas distribution plate 30.The shape symmetry of the shape of substrate shield unit 31 and substrate supports thing 20, and the diameter of substrate shield unit 31 is less than or equal to the diameter of substrate S.
RF (radio frequency) power supply 60 is electrically connected to substrate supports thing 20, and impedance matching system 62 is placed between substrate supports thing 20 and the RF power supply 60.
Hereinafter, will describe 100 pairs of edges of substrate of use correlation technique etching machines with reference to figure 2 and carry out etching method.Fig. 2 explanation is carried out etching machines in the etched technology according to correlation technique to edges of substrate.
At first, by door (not shown) substrate S is sent in the chamber 10, and substrate S is placed on the substrate supports thing 20.By vacuum draw, chamber 10 is under the vacuum condition, and by driver element 70 up and down substrate supports thing 20 is elevated to and handles the position, as shown in Figure 2.At this moment, substrate supports thing 20 can be elevated to a position, make that the distance between substrate S and the substrate shield unit 31 can be at about 0.2mm in the scope of 0.5mm.Here it is why prevent the atomic group of the plasma that the edge of substrate S produces or ions diffusion in the core of substrate S and poorly influence be formed on the reason of the Thinfilm pattern on the core of substrate S.
After substrate supports thing 20 being elevated to the processing position, etching gas is infused in the place, periphery of gas distribution plate 30 by hand-hole 32, and simultaneously, RF power is applied to substrate supports thing 20 from RF power supply 60, produces plasma by this around the edge of substrate S.Atomic group in the plasma or ion(ic) etching are also removed the formed film of edge of substrate S.
On the other hand, recently, slotted in the marginal portion of substrate S, to form recessed area 45.Recessed area 45 is used for accurate aligning, as shown in Figure 3.When the etching machines that comprises substrate shield unit 31 (its diameter is less than the diameter of substrate S) in using Fig. 2 carries out etching to the edge of substrate S, the inner surface of recessed area 45 is by substrate shield unit 31 shielding, makes that film or the particulate on the inner surface of recessed area 45 can be not etched.The zone by 31 shieldings of substrate shield unit of recessed area 45 is defined as shielding area 47.That is, film on the side surface of the recessed area 45 in shielding area 47 or particulate P can be not etched, and keep after the etch process that uses the correlation technique etching machines, as shown in Figure 4.
Fig. 5 is illustrated in the vision figure of use according to the recessed area after the etch process of the etching machines of correlation technique.As shown in Figure 5, the inner surface to recessed area does not carry out etching, makes film or particulate keep after etch process.Explain as mentioned, if carry out following step under the situation of not removing this type of film that accumulates in the edges of substrate place or particulate, film or particulate may peel off so, and may pollute other zone of substrate.Perhaps, substrate may bending maybe may be misalignment.
On the other hand, when using diameter less than the small-sized substrate of 200mm, the marginal portion of cutting substrate to be forming the flat region, rather than it is slotted to form recessed area.In the case, as forming recessed area, the inner surface of flat region is by the shielding of substrate shield unit, makes that film or the particulate on the inner surface of recessed area 45 can be not etched.
Summary of the invention
Therefore, the present invention is directed to a kind of etching machines, it carries out etching to the edge of substrate with one in recessed area and flat region effectively.
A purpose of the present invention provides a kind of etching, it removes film or particulate on the edge of the substrate with one in recessed area and flat region effectively with the substrate shield unit, described substrate shield unit has the part corresponding to described one in recessed area and the flat region.
Additional features of the present invention and advantage will state in the description content hereinafter, and will understand part additional features and advantage from described description content, perhaps can learn described additional features and advantage by putting into practice the present invention.To realize and reach purpose of the present invention and other advantage by the structure that spells out in written description of the present invention and claims and the accompanying drawing.
For realize these and other advantage and according to purpose of the present invention (such as enforcement and extensively describe), a kind of etching machines comprises: chamber; Substrate supports thing in described chamber; Substrate, it is placed on the described substrate, and has one in recessed area and the flat region, except recessed area and flat region described one in, described substrate has the annular shape rim, and wherein the rim of substrate has concave shape in recessed area, and has the string shape in the flat region; The substrate shield unit, its shape shape with substrate in fact is identical, and be placed in the substrate top, the substrate shield unit has the part corresponding to described one in recessed area and the flat region, and wherein the substrate shield unit has first diameter of second diameter that is less than or equal to substrate; Gas injection apparatus, it supplies a gas to the outer of substrate and places; And power subsystem, it is fed to RF (radio frequency) power in the chamber.
Should be appreciated that above general description and following detailed description all are exemplary and illustrative, and be desirable to provide to as the of the present invention further explaination of being advocated.
Description of drawings
The present invention comprises accompanying drawing, and providing further understanding of the present invention, and accompanying drawing incorporates in this specification and constitute the part of this specification, the description of drawings embodiments of the invention, and, be used to explain principle of the present invention together with describing content.In the accompanying drawings:
Fig. 1 explanation uses plasma that edges of substrate is carried out etched equipment according to correlation technique;
Fig. 2 explanation is carried out etching machines in the etched technology according to correlation technique to edges of substrate;
Fig. 3 is a schematic plan view of showing the substrate that is shielded by the substrate shield unit according to correlation technique;
Fig. 4 is illustrated in the recessed area of the substrate after the etch process that use carries out according to the etching machines of correlation technique;
Fig. 5 is illustrated in the vision figure of the recessed area after the etch process that use carries out according to the etching machines of correlation technique;
Fig. 6 is the perspective illustration of displaying according to the substrate shield unit of the etching machines of the embodiment of the invention;
Fig. 7 explanation is according to the substrate shield unit and the substrate supports thing of etching machines of the present invention;
Fig. 8 A and Fig. 8 B are respectively the schematic plan views of showing by the substrate of substrate shield according to the present invention unit shielding.
Fig. 9 A is illustrated in the vision figure that uses the recessed area comprise the substrate after the etch process that the etching machines according to substrate shield of the present invention unit carries out respectively to Fig. 9 C; And
Figure 10 is the perspective illustration of displaying according to the substrate shield unit of the etching machines of the embodiment of the invention.
Embodiment
Now will be concrete with reference to preferred one exemplary embodiment, the example of described embodiment is described in the accompanying drawings.
In the present invention, other element except that the substrate shield unit is similar to the element shown in Fig. 1.Therefore, explaination of the present invention is concentrated on the substrate shield unit.
Fig. 6 is the perspective illustration of displaying according to the substrate shield unit of the etching machines of the embodiment of the invention.The place, side of substrate shield unit 200 comprises recessed portion 230.Recessed portion 230 is corresponding to the recessed area of substrate.Because the cause of the recessed portion 230 of substrate shield unit 200, the problem that causes owing to recessed area in the correlation technique is solved.That is, because substrate shield unit 200 comprises recessed portion 230 (it is formed at side place of substrate shield unit 200, and corresponding to the recessed area of substrate), so film on the inner surface in the recessed area of substrate or particulate are etched.
Comprise first main body 210 and second main body 220 according to substrate shield of the present invention unit 200.First and second main bodys 210 and 220 have cylinder form.The diameter of first main body 210 is less than the diameter of second main body 220.Recessed portion 230 is formed at the place, side of second main body 220.First and second main bodys 210 and 220 can form as one, and maybe can be individually formed and then be attached to one another.The substrate shield unit can have single cylinder-shaped body.Yet, when substrate shield unit 230 comprises first main body 210 and from first main body 210 during to outstanding second main body 220 in side, prevented that effectively plasma diffusion that the edges of substrate place produces is in the core of substrate and poorly influence Thinfilm pattern on the core of substrate.Because second main body 220 is towards substrate, and become, so the lower surface of second main body 220 is flattened subtly near substrate.Yet other surface of second main body 220 does not need to be flattened subtly.
Fig. 7 explanation is according to the substrate shield unit and the substrate supports thing of etching machines of the present invention.
When carrying out etch process, substrate S is placed on the substrate supports thing 250, and the substrate shield unit 200 that will comprise first main body 210 and second main body 220 is placed in the substrate S top.The lower substrate of second main body 200 is towards substrate S.The diameter of substrate supports thing 250 is less than the diameter of substrate S.And the diameter of second main body 220 of substrate shield unit 200 is less than the diameter of substrate S.The diameter of substrate supports thing 250 is less than or equal to the diameter of second main body 220 of substrate shield unit 200.The center of the center of substrate S and substrate supports thing 250 corresponds to each other.In addition, substrate shield unit 200 is placed in substrate S top, makes the recessed portion 230 of second main body 220 corresponding to the recessed area 245 (Fig. 8) of substrate S.Although not shown, substrate supports thing 250 is placed in the reaction compartment according to the chamber of etching machines of the present invention.When substrate S is placed on the substrate supports thing 250, and when substrate shield unit 200 becomes near substrate S, the periphery that etching gas is infused in gas distribution plate is located, and simultaneously by hand-hole, RF power is applied to substrate supports thing 250, around the edge of substrate S, produces plasma by this.Atomic group in the plasma or ion(ic) etching are also removed the formed film of edge or the particulate of substrate S.Substrate shield unit 200 is outstanding to substrate S from gas distribution plate.
Fig. 8 A and Fig. 8 B are respectively the schematic plan views of showing by the substrate of substrate shield according to the present invention unit shielding.
Referring to Fig. 8 A, slotted in the side of substrate S, with formation recessed area 245, and also slotted in the side of substrate shield unit 200, to form recessed portion 230.In other words, except recessed area 245, substrate S has the annular shape rim, and the rim of substrate S has concave shape in recessed area 245.And the shape of substrate shield unit 200 shape with substrate S in fact is identical, and the recessed area 245 of substrate S also has identical in fact shape, for example semicircular in shape with the recessed portion 230 of substrate shield unit 200.When substrate shield unit 200 was placed in the substrate S top, the recessed portion 230 of substrate shield unit 200 was corresponding to the recessed area 245 of substrate S.The recessed area 245 of substrate S has first width W 1 and first depth D 1, and the recessed portion 230 of substrate shield unit 200 has second width W 2 and second depth D 2, and wherein second width W 2 is less than first width W 1, and second depth D 2 is less than first depth D 1.Although not shown, the width of the recessed portion of substrate shield unit and the degree of depth can equal the width and the degree of depth of the recessed area of substrate respectively.
Fig. 9 A is illustrated in the vision figure that uses the recessed area comprise the substrate after the etch process that the etching machines according to substrate shield of the present invention unit carries out respectively to Fig. 9 C.
Fig. 9 A is illustrated in and uses the etching machines comprise the substrate shield unit to carry out the vision figure of the recessed area of the substrate after the etching, and described substrate shield unit has width and is about the recessed portion 230 that 2mm and the degree of depth are about 1mm.Use experimental technique, the width that is about 1.503mm and the film or the particulate that are about the substrate in the degree of depth of 1.52mm are carried out etching.In Fig. 9 A, the recessed portion 230 of the etching area of substrate and substrate shield unit is variant.With regard to width, the etching area of substrate is than the recessed portion 230 little 0.479mm of substrate.On the other hand, with regard to the degree of depth, the etching area of substrate is than the recessed portion 230 big 0.52mm of substrate.
Fig. 9 B is illustrated in and uses the etching machines comprise the substrate shield unit to carry out the vision figure of the recessed area of the substrate after the etching, and described substrate shield unit has width and is about the recessed portion 230 that 4mm and the degree of depth are about 2mm.Use experimental technique, the width that is about 3.711mm and the film or the particulate that are about the substrate in the degree of depth of 2.591mm are carried out etching.In Fig. 9 B, the etching area of substrate is also variant with the recessed portion 230 of substrate shield unit.With regard to width, the etching area of substrate is than the recessed portion 230 little 0.289mm of substrate.On the other hand, with regard to the degree of depth, the etching area of substrate is than the recessed portion 230 big 0.59mm of substrate.
Fig. 9 C is illustrated in and uses the etching machines comprise the substrate shield unit to carry out the vision figure of the recessed area of the substrate after the etching, and described substrate shield unit has width and is about the recessed portion 230 that 8mm and the degree of depth are about 2mm.Use experimental technique, the width that is about 7.46mm and the film or the particulate that are about the substrate in the degree of depth of 2.654mm are carried out etching.In Fig. 9 A, the etching area of substrate is also variant with the recessed portion 230 of substrate shield unit.With regard to width, the etching area of substrate is than the recessed portion 230 little 0.54mm of substrate.On the other hand, with regard to the degree of depth, the etching area of substrate is than the recessed portion 230 big 0.65mm of substrate.
Therefore, when the substrate shield unit that use comprises the recessed portion with width and degree of depth carried out etching to edges of substrate, the width of the etching area of substrate was littler than the width of recessed portion, and the degree of depth of depth ratio recessed portion is big.That is, the etching area of the width of known recessed portion and the degree of depth and substrate has confidential relation.Therefore, according to the width of the recessed area of substrate and the width and the degree of depth that the degree of depth is determined the recessed portion of substrate shield unit.
Referring to Fig. 8 B, slotted with formation recessed area 245 in the side of substrate S, and also slotted to form recessed portion 230 in the side of substrate shield unit 200.The shape of the recessed portion 230 of substrate shield unit 200 shape with the recessed area 245 of substrate S in fact is identical.Be different from the substrate shield unit 200 among Fig. 8 A, recessed portion 230 has the 4th width W 4 and the 4th depth D 4, wherein the 4th width W 4 is greater than the 3rd width W 3 of the recessed area 245 of substrate S, and the 4th depth D 4 is less than the 3rd depth D 3 of the recessed area 245 of substrate S.Known to from Fig. 9 A to Fig. 9 C, when coming that with the substrate shield unit with recessed portion (it has preset width and desired depth) substrate carried out etching, the width of the etching area of substrate is less than the width of recessed portion, and the degree of depth is greater than the degree of depth of recessed portion.Therefore, although the 4th depth D 4 of recessed portion 230 less than the 3rd depth D 3 of recessed area 245, the inside part of recessed area 245 still is etched.In addition, although the 4th width W 4 of recessed portion 230 greater than the 3rd width W 3 of recessed area 245, the periphery that the usefulness substrate shield unit of substrate 200 covers is not etched.Therefore, on substrate S, obtain required etching area.
Figure 10 is the perspective illustration of displaying according to the substrate shield unit of the etching machines of the embodiment of the invention.
Referring to Figure 10, with substrate shield unit class among Fig. 6 seemingly, substrate shield unit 300 comprises first main body 320 and second main body 320.In Figure 10, substrate shield unit 300 has flat side part 330.Substrate S has flat region 345, as recessed area 245 (Fig. 8 A and Fig. 8 B), is used for accurate aligning.Except flat region 345, substrate S has the annular shape rim, and the rim of substrate S has the string shape in the flat region.Substrate shield unit 300 (second main body in particular) has identical with substrate S in fact shape, and flat side part 330 has in fact the shape identical with flat region 345.When substrate shield unit 330 was placed in the substrate S top, the flat side part 330 of substrate shield unit 300 was corresponding to the flat region 345 of substrate S.Because the cause of the flat side part 330 of substrate shield unit 300, can carry out etching to the film and the particulate corresponding on the flat region 355 at the side of the substrate S that forms owing to flat region 345 and edge of substrate S.
In etching machines according to the present invention, passing through on the substrate forms side surface that recessed area or flat region produce or edge by etching effectively, because the substrate shield unit has corresponding to the recessed portion of recessed area or corresponding to the flat side part of flat region.
Therefore, prevented owing to making film and particulate be retained in the problem that causes on the inner surface in recessed area or the flat region.
It will be apparent to those skilled in the art that, can under the situation that does not break away from the spirit or scope of the present invention, in described equipment, make various modifications and change.Therefore, hope needs only modification of the present invention and changes in the scope of appended claims and equipollent thereof, and these modifications and change are just contained in the present invention.
Claims (11)
1. etching machines, it comprises:
Chamber;
Substrate supports thing in described chamber;
Substrate, it is placed on the described substrate supports thing, and have one in recessed area and the flat region, except in described recessed area and described flat region described one in, described substrate has the rim of annular shape, the rim of wherein said substrate has concave shape in described recessed area, and has the string shape in described flat region;
The substrate shield unit, it has identical with described substrate in fact shape, and be placed in described substrate top, described substrate shield unit has the recessed portion corresponding to described one in described recessed area and the described flat region, wherein said substrate shield unit has first diameter, and described first diameter is less than or equal to second diameter of described substrate;
Supply a gas to the outer gas injection apparatus of placing of described substrate, it is placed near the described substrate shield unit, and the described recessed area of wherein said substrate or the edge of described flat region partly are exposed to described gas by the female of described substrate shield unit; And
Power subsystem, it is fed to RF (radio frequency) power in the described chamber.
2. equipment according to claim 1, wherein said substrate shield unit comprises:
First main body; And
Second main body, it has described first diameter, and described first diameter is greater than the diameter of described first main body,
Wherein form the female part of described substrate shield unit, and described second main surface is to described substrate at the place, side of described second main body.
3. equipment according to claim 2, wherein said first and second main bodys are integrated into single main body.
4. equipment according to claim 1, wherein when described substrate had described recessed area, the female of described substrate shield unit part had the bigger width and the littler degree of depth than described recessed area.
5. equipment according to claim 1, wherein when described substrate had described recessed area, the female of described substrate shield unit part had the littler width and the littler degree of depth than described recessed area.
6. equipment according to claim 1, wherein said gas injection apparatus are placed on the upside of described chamber, and sealing described chamber, and described substrate shield unit is outstanding to described substrate from described gas injection apparatus.
7. equipment according to claim 6, wherein said gas injection apparatus comprises a plurality of gas injection holes, and described gas injection hole is placed on the described upside of described chamber.
8. equipment according to claim 1, wherein said substrate supports thing can move up and down.
9. equipment according to claim 1, wherein said substrate supports thing has the 3rd diameter less than described second diameter.
10. equipment according to claim 9, wherein said the 3rd diameter is less than or equal to described first diameter.
11. equipment according to claim 1, wherein said power subsystem is connected to the substrate supports thing.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR20060105829 | 2006-10-30 | ||
| KR10-2006-0105829 | 2006-10-30 | ||
| KR1020060105829 | 2006-10-30 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101197251A CN101197251A (en) | 2008-06-11 |
| CN101197251B true CN101197251B (en) | 2010-12-08 |
Family
ID=39474375
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2007101643484A Active CN101197251B (en) | 2006-10-30 | 2007-10-30 | Etching apparatus for edges of substrate |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US20080128088A1 (en) |
| KR (1) | KR101359402B1 (en) |
| CN (1) | CN101197251B (en) |
| TW (1) | TWI433233B (en) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI410710B (en) * | 2010-01-29 | 2013-10-01 | Sureway Technology Co Ltd | A method of eliminating the stress on a glass panel and associated jigs are disclosed |
| US20140007901A1 (en) * | 2012-07-06 | 2014-01-09 | Jack Chen | Methods and apparatus for bevel edge cleaning in a plasma processing system |
| JP6664658B2 (en) * | 2016-03-02 | 2020-03-13 | 日本電気硝子株式会社 | Manufacturing method of sheet glass |
| KR102656188B1 (en) | 2022-02-21 | 2024-04-11 | (주)디바이스이엔지 | Device for etching the periphery edge of a substrate and method for controlling etching thereof |
| KR102597414B1 (en) | 2022-02-21 | 2023-11-02 | (주)디바이스이엔지 | Device for etching the periphery edge of a substrate comprising substrate sensing unit |
| KR20230125618A (en) | 2022-02-21 | 2023-08-29 | (주) 디바이스이엔지 | Device for etching the periphery edge of a substrate |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1692475A (en) * | 2003-05-12 | 2005-11-02 | 索绍株式会社 | Plasma etching chamber and plasma etching system using same |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5643394A (en) * | 1994-09-16 | 1997-07-01 | Applied Materials, Inc. | Gas injection slit nozzle for a plasma process reactor |
| US6113702A (en) * | 1995-09-01 | 2000-09-05 | Asm America, Inc. | Wafer support system |
| US6521292B1 (en) * | 2000-08-04 | 2003-02-18 | Applied Materials, Inc. | Substrate support including purge ring having inner edge aligned to wafer edge |
| KR100442194B1 (en) * | 2002-03-04 | 2004-07-30 | 주식회사 씨싸이언스 | Electrodes For Dry Etching Of Wafer |
| KR100466297B1 (en) * | 2002-10-17 | 2005-01-13 | 한국디엔에스 주식회사 | Apparatus for manufacturing semiconductor devices |
| KR100585089B1 (en) * | 2003-05-27 | 2006-05-30 | 삼성전자주식회사 | Plasma processing apparatus for processing the edge of wafer, insulating plate for plasma processing, bottom electrode for plasma processing, method of plasma processing the edge of wafer and method of fabricating semiconductor device using the same |
| KR100532354B1 (en) * | 2004-05-31 | 2005-11-30 | 삼성전자주식회사 | Apparatus for controling etching area and apparatus and method for etching edge of wafer |
| KR100667675B1 (en) * | 2004-10-08 | 2007-01-12 | 세메스 주식회사 | Atmospheric pressure plasma apparatus used in etching of an substrate |
| KR100639572B1 (en) * | 2004-12-28 | 2006-10-30 | 주식회사 코미코 | Electrostatic chuck having double flat zones |
-
2007
- 2007-10-29 KR KR1020070108825A patent/KR101359402B1/en active IP Right Grant
- 2007-10-29 US US11/927,182 patent/US20080128088A1/en not_active Abandoned
- 2007-10-30 CN CN2007101643484A patent/CN101197251B/en active Active
- 2007-10-30 TW TW096140857A patent/TWI433233B/en active
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1692475A (en) * | 2003-05-12 | 2005-11-02 | 索绍株式会社 | Plasma etching chamber and plasma etching system using same |
Non-Patent Citations (1)
| Title |
|---|
| JP特开2002-359203A 2002.12.13 |
Also Published As
| Publication number | Publication date |
|---|---|
| CN101197251A (en) | 2008-06-11 |
| KR20080039271A (en) | 2008-05-07 |
| TWI433233B (en) | 2014-04-01 |
| US20080128088A1 (en) | 2008-06-05 |
| TW200832541A (en) | 2008-08-01 |
| KR101359402B1 (en) | 2014-02-07 |
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