CN101195927A - Method for producing large area polysilicon - Google Patents
Method for producing large area polysilicon Download PDFInfo
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- CN101195927A CN101195927A CNA2007101493487A CN200710149348A CN101195927A CN 101195927 A CN101195927 A CN 101195927A CN A2007101493487 A CNA2007101493487 A CN A2007101493487A CN 200710149348 A CN200710149348 A CN 200710149348A CN 101195927 A CN101195927 A CN 101195927A
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Abstract
The invention relates to a method for preparing lager area polysilicon by utilizing vacuum ultraviolet lamp irradiation, which is characterized in that a substrate carried with amorphous silicon membrane is positioned in the vacuum condition or the inactive atmosphere to heat, and to receive the radiation light irradiation from the vacuum ultraviolet lamp, and to cause the substrate is converted into the polysilicon through crystallization. Compared with the prior laser crystallization method, the invention has the advantages that the lamplight irradiation area is large, the speed is fast, and the crystallization conversion time is short, for example, the time for the amorphous silicon of an area with four inches diameter to convert into the polysilicon is less than an hour, and the radiation uniformity is good, not only the preparation of the large area polysilicon membrane can be easily realized, but also the uniformity and the reproducibility of the large area preparation can be ensured, the uniformity of the polysilicon membrane obtained is good, and the reproducibility is high. In addition, the irradiation equipment is simple, the cost is low, and the operation and maintenance are simple and convenient.
Description
Technical field
The present invention relates to a kind of improved method for manufacturing polycrystalline silicon thin film, especially utilize the vacuum ultraviolet (VUV) light irradiation to prepare the method for large area polysilicon.
Background technology
In the preparation polysilicon membrane technology, laser radiation crystallization method only produces the moment high-temperature effect in the thick degree of depth of film top layer 100nm, does not touch substrate material, thereby available cheap simple glass makes substrate, can reduce manufacturing cost by a relatively large margin, and receive an acclaim.Its preparation process is prior to preparation one amorphous silicon membrane on the substrate, and is thin with the laser radiation amorphous silicon film, utilizes the high-energy of moment laser pulse generation to make amorphous silicon membrane fusion post crystallization transform into polysilicon.Though this method possesses more advantage, because laser facula is little, irradiated area is little, big area system film not only the treatment time long, irradiation cost height, and large-area uniformity is with repeated relatively poor; Secondly, laser equipment cost height is safeguarded complicated.
Summary of the invention
The objective of the invention is to overcome above-mentioned the deficiencies in the prior art, provide a kind of and especially be fit to the preparation large area polysilicon, and gained polysilicon homogeneity and good reproducibility, equipment simply prepares the large area polysilicon method.
Another purpose of the present invention is to provide a kind of employing low temperature to prepare the large area polysilicon method.
The present invention's first purpose realizes that main the improvement is after preparing amorphous silicon membrane, has the substrate of amorphous silicon membrane to place vacuum or torpescence atmosphere to heat carrier band, accepts the irradiation of vacuum UV lamp radiant light, makes its crystallization change into polysilicon.Specifically, the present invention prepares the large area polysilicon method, is included in to prepare amorphous silicon membrane on the substrate, it is characterized in that carrier band is had the substrate of amorphous silicon membrane, place vacuum or torpescence atmosphere to heat, and accept the irradiation of vacuum UV lamp radiant light, make its crystallization change into polysilicon.
The present invention prepares amorphous silicon membrane on substrate, be prior art, can adopt for example plasma enhanced chemical vapor deposition (PECVD), low-pressure chemical vapor deposition (LPCVD), hot-wire chemical gas-phase deposition (HWCVD), electron cyclotron resonance chemical vapor deposition (ECRCVD), modes such as sputtering sedimentation form amorphous silicon membrane on substrate.
Described substrate, similar to common preparation polysilicon film, be mainly used in the formation film, according to the different service requirementss of made polysilicon film, can adopt various differing materials substrates in the prior art.
The irradiation of vacuum UV lamp radiant light can make amorphous solid that crystallization takes place under the temperature that is lower than its fusion post crystallization and change into polysilicon, and this is an important invention of the present invention.Described vacuum UV lamp, test has higher photon energy more especially with the vacuum UV lamp of wavelength less than 190nm, and is higher to transforming non-crystalline silicon efficient.Vacuum UV lamp, especially quasi-molecule vacuum UV lamp, its output intensity is higher, thereby has higher promotion transformation efficiency, will preferentially be selected for use among the present invention.
During the irradiation of vacuum UV lamp radiant light, adjust the distance of substrate, can change the energy density that shines amorphous silicon membrane, thereby obtain required conversion rate to irradiation light.Take into account low-cost acquisition vacuum or torpescence atmosphere irradiation environment, and the irradiation homogeneity, irradiation distance of the present invention is preferably less than 50cm, wherein more preferably less than 20cm.
Vacuum or torpescence atmosphere mainly are to prevent to induce down silicon before transforming or transform afterwards oxidized at the vacuum UV lamp radiant light; Heat effect helps promoting that non-crystalline silicon transforms to polysilicon, and improves transformation efficiency.Heating can be to carry out in enclosed space, also can be but have in the torpescence protective atmosphere environment and carry out at non-enclosed space, and wherein better be to adopt for example vacuum environment of enclosed space, help improving transformation efficiency; Perhaps adopt at non-enclosed space and in torpescence protective atmosphere environment and carry out, help scale operation, reduce preparation cost.And test shows that along with the temperature of heating raises, its vacuum UV lamp radiant light irradiation crystallization transformation time shortens, efficient improves, but consider that to reducing preparation cost be fit to adopt simple glass to make substrate, a kind of better is to heat not to be higher than (being equal to or less than) 600 ℃.
The irradiation of vacuum UV lamp radiant light can be adopted static irradiation, and equipment cost is low, produces simple; Also can adopt rotary irradiation, the irradiation good evenness.
The present invention heats in vacuum or torpescence atmosphere, and shine by the vacuum UV lamp radiant light, make the non-crystalline silicon crystallization change into polysilicon, existing laser crystallization method has: the light-illuminating area is big, speed is fast, the crystallization transformation time is short, for example the non-crystalline silicon of 4 inch diameter areas changed into polysilicon less than one hour, and uniformity of radiation is good, not only be easy to realize the large area polysilicon film preparation, and can guarantee large-area preparation homogeneity and repeatability, gained polysilicon membrane good uniformity, repeatability is high.And irradiation apparatus is simple, and cost is low, and operating maintenance is easy.
Further specify the present invention below in conjunction with three embodiment and accompanying drawing, helping better to understand the present invention, but embodiment should be interpreted as to concrete qualification of the present invention.
Description of drawings
Accompanying drawing utilizes the vacuum ultraviolet (VUV) light irradiation to prepare large area polysilicon film process synoptic diagram for one of the present invention.
Embodiment
Embodiment 1: referring to accompanying drawing, on simple glass substrate 1, be the amorphous silicon membrane 2 of 50nm with plasma enhanced chemical vapor deposition (PECVD) deposit one 4 inch diameter areas, thickness at first; With (this method can make the big area film obtain higher homogeneity) on the rotatable Stage microscope 4 that is deposited with in the glass substrate 1 dislocation vacuum chamber 3 of amorphous silicon membrane 2.Xenon excimer ultraviolet lamp 7 is housed directly over the Stage microscope in the vacuum chamber 3, provides up to 100mW/cm
2Intensity of illumination, the distance between Stage microscope 1 and the Excimer UV lamp 7 is 8cm, and plane temperature control heating unit 5 and thermocouple temperature measuring apparatus 6 are arranged on the loading table top.Opening the vacuum pump system 8 that is communicated with vacuum chamber 3 vacuumizes, wash away the vacuum chamber inwall repeatedly by intake valve 9 usefulness inactive gass such as argon gas or nitrogen or neon etc., keep vacuum or charge into for example 200mbar nitrogen of a certain amount of inactive gas, heating and controlled temperature are opened xenon excimer ultraviolet lamp 7 irradiation amorphous silicon membrane 212min in 500 ℃ of steady state values.Take out the polysilicon film 2 that irradiation transforms, carry out Raman spectrum and detect, find that representing the center peak position of non-crystalline silicon is 480cm
-1Broad band almost completely disappears, and the substitute is the 520cm that is positioned at that represents polysilicon
-1Narrow band, show that non-crystalline silicon almost completely is converted to polysilicon.
Embodiment 2: as embodiment 1, wherein radiation source is the krypton Excimer lamp.
Embodiment 3: as embodiment 1, wherein radiation source is the argon Excimer lamp.
In addition, amorphous silicon membrane 2 is accepted illumination, also can be at non-enclosed space and in torpescence protective atmosphere environment; For shortening the production time, can also improve Heating temperature; And static irradiation; Amorphous silicon membrane adopts other substrate deposit; Adopt other vacuum UV lamp radiant light irradiations, perhaps slightly depart from lamp radiant light irradiation of vacuum ultraviolet spectrum or the like, these change at technician's unsubstantiality, still belong to protection domain of the present invention.
Claims (10)
1. prepare the large area polysilicon method, be included in and prepare amorphous silicon membrane on the substrate, it is characterized in that carrier band is had the substrate of amorphous silicon membrane, place vacuum or torpescence atmosphere to heat, and accept the irradiation of vacuum UV lamp radiant light, make its crystallization change into polysilicon.
2. according to the described preparation large area polysilicon of claim 1 method, it is characterized in that the vacuum UV lamp wavelength is less than 190nm.
3. according to the described preparation large area polysilicon of claim 1 method, it is characterized in that vacuum UV lamp is the quasi-molecule vacuum UV lamp.
4. according to the described preparation large area polysilicon of claim 1 method, it is characterized in that the irradiation of vacuum UV lamp radiant light is rotary irradiation.
5. according to the described preparation large area polysilicon of claim 1 method, it is characterized in that the irradiation of vacuum UV lamp radiant light is static irradiation.
6. according to the described preparation large area polysilicon of claim 1 method, it is characterized in that irradiation distance is less than 50cm.
7. according to the described preparation large area polysilicon of claim 6 method, it is characterized in that irradiation distance is less than 20cm.
8. according to the described preparation large area polysilicon of claim 1 method, it is characterized in that heating, be radiated in the vacuum chamber and carry out.
9. according to the described preparation large area polysilicon of claim 1 method, it is characterized in that heating, be radiated at non-enclosed space and in torpescence protective atmosphere environment, carry out.
10. according to claim 1,2,3,4,5,6,7,8 or 9 described preparation large area polysilicon methods, it is characterized in that Heating temperature is not higher than 600 ℃.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2007101493487A CN100543934C (en) | 2007-04-20 | 2007-08-23 | Preparation large area polysilicon method |
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| Application Number | Priority Date | Filing Date | Title |
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| CN200710021710.2 | 2007-04-20 | ||
| CN200710021710 | 2007-04-20 | ||
| CNB2007101493487A CN100543934C (en) | 2007-04-20 | 2007-08-23 | Preparation large area polysilicon method |
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| CN101195927A true CN101195927A (en) | 2008-06-11 |
| CN100543934C CN100543934C (en) | 2009-09-23 |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104713857A (en) * | 2015-04-07 | 2015-06-17 | 哈尔滨工业大学 | Thermal-insulation and rotary integrated loading device for use in measurement of high-temperature photo-thermal properties of material |
| CN104790032A (en) * | 2015-03-16 | 2015-07-22 | 大连大学 | Method for laser pulse sputtering deposition preparation of polycrystalline silicon thin film |
| CN112742423A (en) * | 2020-12-15 | 2021-05-04 | 中山大学 | Preparation of palladium-phosphorus-sulfur two-dimensional polycrystalline material and application thereof in electrochemical field |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3908405B2 (en) * | 1999-03-31 | 2007-04-25 | 三菱電機株式会社 | Laser heat treatment method |
| JP4408668B2 (en) * | 2003-08-22 | 2010-02-03 | 三菱電機株式会社 | Thin film semiconductor manufacturing method and manufacturing apparatus |
| JP4408667B2 (en) * | 2003-08-22 | 2010-02-03 | 三菱電機株式会社 | Thin film semiconductor manufacturing method |
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2007
- 2007-08-23 CN CNB2007101493487A patent/CN100543934C/en active Active
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104790032A (en) * | 2015-03-16 | 2015-07-22 | 大连大学 | Method for laser pulse sputtering deposition preparation of polycrystalline silicon thin film |
| CN104713857A (en) * | 2015-04-07 | 2015-06-17 | 哈尔滨工业大学 | Thermal-insulation and rotary integrated loading device for use in measurement of high-temperature photo-thermal properties of material |
| CN104713857B (en) * | 2015-04-07 | 2017-07-28 | 哈尔滨工业大学 | It is a kind of to be used to measure the heat-insulated rotating integrated formula carrying apparatus used during material at high temperature photo-thermal property |
| CN112742423A (en) * | 2020-12-15 | 2021-05-04 | 中山大学 | Preparation of palladium-phosphorus-sulfur two-dimensional polycrystalline material and application thereof in electrochemical field |
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| CN100543934C (en) | 2009-09-23 |
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