CN101189367A - Composite comprising array of acicular crystal, process for producing the same, photoelectric conversion element, luminescent element, and capacitor - Google Patents

Abstract

A composite of a base and an array of needle-like crystals formed on the surface of the base is provided, in which the base side and the opposite side to the base with respect to the array can be isolated in a satisfactory manner. A composite 10 includes a transparent electrode 2 serving as the base, an array 4 of needle-like crystals 3 formed thereon, and a coating film 15 covering the surface of the needle-like crystals 3. The needle-like crystals 3 are made of, for example, zinc oxide, and the coating film 15 contains, for example, titanium oxide. The array 4 includes a first region R1 on the transparent electrode 2 side and a second region R2 on the opposite side to the transparent electrode 2 with respect to the first region R1. A proportion of the cross section of the needle-like crystals 3 in a plane parallel to the surface of the transparent electrode 2 is lower in the second region R2 than in the first region R1, and the surface of the transparent electrode 2 is substantially covered with the needle-like crystals 3 in the first region R1.

Description

The complex body and manufacture method and photo-electric conversion element, luminous element and the electrical condenser that contain the arrange body of needle crystal

Technical field

The present invention relates to contain the complex body and the manufacture method thereof of arrange body of needle crystal and photo-electric conversion element, luminous element and the electrical condenser that uses this complex body.

Background technology

Photo-electric conversion element, luminous element, electrical condenser etc. are material contact or the approaching elements that disposes the phenomenon that is produced that utilizes by making two types.For example, photo-electric conversion element and luminous element utilize following phenomenon, that is, be subjected to the light quantity of light corresponding with contact surface at p N-type semiconductorN and n N-type semiconductorN, combine this phenomenon of generation that causes light again because of the generation of electron-hole pair or electronics and hole.With regard to electrical condenser, be to utilize by the polarization of dielectric effect of pair of electrodes clamping.

In these elements, can be by increasing by two types contact area of material or the characteristic that opposed area improves element.For example, in photo-electric conversion element, by increasing the interfacial area of p N-type semiconductorN and n N-type semiconductorN, can increase the number of the electron-hole pair of generation, promptly can increase the size of photoelectric current (photoelectromotive force), with regard to luminous element, can increase the light quantity of the light of generation.In addition, with regard to electrical condenser, contact (opposed) area, can improve electrostatic capacitance by what increase dielectric medium and electrode.

For increasing the contact area or the opposed area of two types material, attempt in these elements, using the aggregate of the big needle crystal of surface coefficient (than table face Plot).

For example, disclose a kind of photo-electric conversion element in following patent documentation 1, it possesses transparency electrode, be formed at the needle crystal of the charge transport layer of formation on this transparency electrode and by another charge transport layer that is provided with this needle crystal mode of (opposed) of joining.

In addition, disclose a kind of electrical condenser at following patent documentation 2, it possesses: the smooth memory node that constitutes by polysilicon, be formed on this memory node and by germanium etc. have a plurality of needle crystals that the material of electroconductibility constitutes, with the mode on the surface that covers this needle crystal be provided with and the electrical condenser that constitutes by silicon oxide with insulating film (dielectric medium).

A kind of method of making needle-like crystalline arrange body in the such solution that comprises polymine and zine ion of vulkacit H (hexamethylenetetramine) by heated substrates (matrix) is disclosed in following patent documentation 3, and the device that uses the arrange body of the needle crystal of making by this manufacture method.As this device, it is disclosed to be dye-sensitized solar cell (dye-sensitized too Yang Electricity pond) (the semi-conductive dye-sensitized solar cell that uses the arrange body of this needle crystal to be used as having p type characteristic) and photodiode.Following patent documentation 3 also discloses the I-E characteristic of the FET (field-effect transistor) of the arrange body that has used zinc oxide needle crystal.

In the manufacture method of following Patent Document 3, because the zone in the matrix side can not (come down to fully) to cover matrix densely with arrange body, so when forming device, the means of leaking as the electric current that prevents the exposed division by the matrix that exposes from arrange body are provided with electronic barrier layer (insulation layer) in the gap of the needle crystal of arrange body.

In addition, in following non-patent literature 3, disclose a kind of manufacturing method for LED and characteristic thereof of having used the arrange body of zinc oxide needle crystal.At this, the arrange body of zinc oxide needle crystal forms by galvanic deposit.But, in the zone of matrix side, owing to can not (come down to fully) densely to cover matrix with arrange body, so in the gap configuration of needle crystal isolator is arranged, to prevent the leakage of electric current.

In following patent documentation 3 and non-patent literature 3,, use the insulating polymer of polymethylmethacrylate and polystyrene and so on as the isolator that is used to prevent that leakage current from producing.These isolators after the mode with capping oxidation zinc needle crystal forms, the part of removing the leading section that is positioned at zinc oxide needle crystal by UV irradiation, plasma irradiation etc., and keep isolator in the gap of zinc oxide needle crystal.

In following non-patent literature 4, disclose a kind of method of on the stratum basale that constitutes by zinc oxide, utilizing electroless plating to apply the arrange body of the needle crystal of making zinc oxide.This method is the dimethoxy methyl alcohol that two hydrates of zinc acetate and monoethanolamine have been dissolved in coating on matrix, will be through 60 ℃ of 24 hours dried films as stratum basale.The thickness of stratum basale is about 100nm.Zinc concentration at plating solution is under the situation of 0.01 mol, and the pH value of the plating solution during plating gets 9 to 13, obtains the arrange body of zinc oxide needle crystal thus.

Following non-patent literature 5 discloses and a kind ofly forms zinc-oxide film with sputtering method on glass substrate, and makes the method that nuclear forms the arrange body of zinc oxide needle crystal with this zinc-oxide film.Utilize this method, compare, can obtain the needle crystal of orientation unanimity with the needle crystal that obtains with common liquid growth.

Patent documentation 1: TOHKEMY 2002-356400 communique;

Patent documentation 2: Japanese kokai publication hei 6-252360 communique;

Patent documentation 3: No. 2005/0009224 specification sheets of U.S. Patent Application Publication;

Nine people such as non-patent literature 1:Michael H.Huang, " Room-Temperature UltravioletNanowire Nanolasers ", SCIENCE vol.292 is (8 June 2001) p.1897-1899;

Two people such as non-patent literature 2:Masanobu Izaki, " Transparent zinc oxide.lmsprepared by electrochemical reaction ", Appl.Phys.Lett.68 (17), (22 April 1996);

Three people such as non-patent literature 3:R.Konenkamp, " Ultraviolet Electroluminescencefrom ZnO/Polymer Heterojunction Light-Emitting Diodes ", Nano Letters, vol.5p.2005 (17 September 2005);

Two people such as non-patent literature 4:Satoshi Yamabi, " Growth conditions for wurtzitezinc oxide films in aqueous solutions ", J.Mater.Chem., 12,3773, (2002);

Three people such as non-patent literature 5:R.B.Peterson, " Epitaxial Chemical Deposiotion ofZnO Nanocolumns from NaOH Solutions ", Langmuir, 20,5114, (2004);

Non-patent literature 6: Japanese Surface Science can be compiled, " basis of revised edition, surface chemistry and application ", エ ヌ テ イ one エ ス (NTS) society;

Two people such as non-patent literature 7:A.Fujishima, " Electrochemical Photolysis of Waterat a Semiconductor Electrode " Nature, 238,37 (1972).

Summary of the invention

But, in the photo-electric conversion element of above-mentioned patent documentation 1, each needle crystal is generally perpendicularly extended with respect to the surface of transparency electrode (matrix), and adjacent needle crystal is spaced from each other arranged spaced, so, transparency electrode is not covered fully by the arrange body of needle crystal, and exposed division and another charge transport layer of the transparency electrode of exposing from the arrange body of needle crystal contact.Therefore, between transparency electrode and another charge transport layer, there is leakage current to pass through, reduced efficient as photo-electric conversion element.

Be applicable to luminous element though also generally acknowledge the structure of this photo-electric conversion element that has used needle crystal, but in this luminous element, the same with the situation of photo-electric conversion element, between transparency electrode and another charge transport layer, there is leakage current to pass through, reduced emitting component.

In addition, in the electrical condenser of above-mentioned patent documentation 2, because each needle crystal is also generally perpendicularly extended with respect to the surface of memory node, and adjacent needle crystal is spaced from each other arranged spaced, therefore, memory node can not be covered fully by the arrange body of needle crystal, makes the exposed division of the memory node that exposes from the arrange body of needle crystal contact with insulating film with electrical condenser.That is, electrical condenser with the insulating film material different with electric rerum natura, be that memory node contacts with the needle crystal both sides.

Therefore, can not apply voltage equably on insulating film at electrical condenser, thus the loss that produces electrostatic capacitance in can this electrical condenser.In addition,, on the interface of memory node and needle crystal, form electrical double layer, therefore, will produce the loss of electromotive force and the loss that produces Charge Storage when when electrical condenser applies voltage on insulating film.

Also consideration will use the structure of this electrical condenser of needle crystal to be applied to electric double layer capacitor.In this case, use electrolyte solution instead of capacitor insulating film, as long as on needle crystal, use the structure of bringing into play function as polarizing electrode.But under this situation, electrolyte solution also directly contacts with the matrix that is equivalent to memory node.Electrolyte solution contains the supporting salt that is useful on the reduction internal resistance, owing to the generation that causes leakage current that contacts of matrix and electrolyte solution.

In addition, in above-mentioned patent documentation 3 and non-patent literature 3 disclosed devices, be used for preventing the isolator that leaks because the deterioration that causes in the deterioration of life-time service and because of heat, light, perhaps painted generation is bad, and perhaps to produce characteristic (for example resistance) in the device bad owing to the diffusion of contaminants of using this isolator to cause.In addition, use the advantage of the arrange body of needle crystal, although its effective surface area is big, owing in the gap of the arrange body of acicular crystals, be provided with the isolator polymkeric substance, so reduced its effective surface area.

In addition, in the manufacture method of above-mentioned non-patent literature 4,, then can not cover the matrix that exposes from stratum basale by this pin hole with the arrange body of needle crystal if on the stratum basale pin hole is arranged.Therefore, must thicken stratum basale, make on stratum basale, not form pin hole.But if following such unfavorable condition then easily takes place the thickening stratum basale, that is, the arrange body of needle crystal is peeled off from matrix, and the part of matrix is exposed.

In the manufacture method of above-mentioned non-patent literature 5, owing to obtain and the needle crystal of consistently extending (little) perpendicular to the direction of matrix with the scope of the formed angle of matrix, so, if the gap of guaranteeing needle crystal, improve the useful area of needle crystal, then have the problem that matrix is exposed.Why making needle crystal and consistently extend perpendicular to the direction of matrix, is because the zinc-oxide film that forms is an alignment films with the sputtering method of formation stratum basale, makes crystal orientation unanimity as the part of needle crystal growth starting point at stratum basale.

Therefore, the objective of the invention is to, a species complex and manufacture method thereof are provided, this complex body is matrix and the complex body that is formed at the arrange body of the needle crystal on this matrix surface, wherein, the opposition side that can isolate matrix side and matrix with respect to arrange body well.

Another object of the present invention is, a species complex and manufacture method thereof are provided, and it does not use isolator, just can isolate the opposition side of matrix side and matrix with respect to arrange body well.

Another object of the present invention is, the manufacture method of a species complex is provided, and makes the arrange body of needle crystal be difficult to peel off from matrix.

Another object of the present invention is, a kind of high efficiency photo-electric conversion element and luminous element are provided.

Another object of the present invention is, a kind of electrical condenser that improves electrostatic capacitance is provided.

Another object of the present invention is, a kind of electrical condenser that reduces leakage current is provided.

First aspect present invention provides a species complex, possess: matrix and be formed at described matrix surface and the arrange body of a plurality of needle crystals of forming by oxide compound, this complex body is characterised in that, described arrange body comprises: the first area of described matrix side and with respect to the second area of described first area at the opposition side of described matrix, than low in described first area, the surface of described matrix is covered by described needle crystal in fact in described first area the ratio in cross section of described needle crystal of face that occupies the surface that is parallel to described matrix at described second area.

Second aspect present invention provides a species complex, possess: matrix and be formed at described matrix surface and the arrange body of a plurality of needle crystals of forming by oxide compound, this complex body is characterised in that, described arrange body comprises: the first area of described matrix side and with respect to the second area of described first area at the opposition side of described matrix, compare with described second area, the orientation of the described needle crystal of described first area is low, and the surface of described matrix is covered by described needle crystal in fact in described first area.

In these complex bodys, in the first area, the surface of matrix is covered fully by needle crystal in fact.In other words, be exactly that the whole face of matrix surface is all covered by needle crystal.Therefore, this complex body can be isolated matrix side and matrix opposition side well with respect to the arrange body of needle crystal.

In the complex body of first aspect, for example, the number of needle crystal that also can be by making per unit area than lacking in the first area, and makes the ratio in cross section (area) of needle crystal of the face that occupies the surface that is parallel to matrix at second area, and is lower than the first area at second area.

In the complex body of second aspect, extend on all directions by making the needle crystal in the first area, can accomplish to cover effectively the surface of matrix.The orientation of so-called needle crystal in the first area is lower than the orientation of the needle crystal in the second area, for example can obtain confirming by following analysis, promptly peel off arrange body from matrix, for a side (first area) that in arrange body, has matrix and its opposition side (second area) each, carry out X-ray diffraction analysis.For example, with regard to a certain mensuration example, the X-ray diffraction figure of second area is only represented 002 and 100 s' crest, and the X ray figure of first area is also represented 101 crest except these crests.

In addition, possess at complex body under the situation of a plurality of outside needle crystal (details as described later) of the end of a plurality of matrix opposition sides from needle crystal outside the arrange regional of needle crystal, extending, with regard to X-ray diffraction analysis, be difficult to confirm the difference of the orientation in first area and the second area sometimes.But,,, can confirm that compare with second area, the shape crystalline orientation of first area pin is low even in this case by the observation of EBSP (Electron Back Scatter Pattern).This be because, as the information relevant with the orientation of needle crystal, with regard to X-ray diffraction, be the average result in the whole zone of mensuration face of arrange body with respect to the determination object that obtains, what obtain with EBSP is each regional information (face orientation) in each mensuration face.

But, situation about all being covered by outside needle crystal in the roughly whole zone of the second area side of arrange body (for example, observe the second area side of the arrange body of needle crystal if use scanning electron microscope, then can only confirm the situation of outside crystallization and so on) under, just can not confirm the difference of orientation of the needle crystal of first area side in the arrange body and second area side with EBSP.

In this case, as long as utilize mechanical mill, cmp etc., begin grinding from the outside needle crystal side of measuring with sample, until the arrange body that exposes needle crystal (second area), the first area side and the second area side of observing this arrange body with EBSP gets final product again.Thus, can confirm respectively orientation in the needle crystal of the first area of arrange body side and second area side.In this case, preferred: grind measure with sample before, bury the gap of the arrange body of needle crystal with resin etc.

Third aspect present invention provides a species complex, it possesses: matrix, arrange body with a plurality of needle crystals that are formed at described matrix surface and form by oxide compound, this complex body is characterised in that, described needle crystal comprises first needle crystal and second needle crystal, wherein, described first needle crystal from the surface that is positioned at described matrix and each of a plurality of starting points away from each other begin to extend to the direction that enters the angular range of regulation with described matrix surface angulation, described second needle crystal is shorter than described first needle crystal, and extend from the direction that each starting point begins in entering the more wide range that comprises described predetermined angular scope

The exposed division that exposes from described first needle crystal on the surface of described matrix is covered by described second needle crystal in fact.

In this complex body, the exposed division that exposes from first needle crystal on the surface of matrix (fully) is in fact covered by second needle crystal.In other words, be exactly that the surface of matrix is covered fully by needle crystal (first needle crystal and second needle crystal) in fact.Therefore, this complex body can be isolated the opposition side of matrix side and matrix well with respect to the arrange body of needle crystal.

In the present invention's first～third aspect in the complex body of either side, owing in fact only just can isolate the opposition side of matrix side and matrix well with needle crystal, so needn't cover matrix with isolator complementaryly for this isolation.That is, complex body of the present invention does not use isolator just can isolate the opposition side of matrix side and matrix well with respect to arrange body.

Owing to such isolator need be set between needle crystal, so can increase the useful area of needle crystal.

In addition, because with respect to arrange body, this complex body needn't use the isolator of the opposition side that is used for isolating well matrix side and matrix, thereby in the device that has used this complex body, deterioration and the painted unfavorable condition that causes because of this isolator can not take place, and because of using the diffusion to device of impurity that this isolator causes.

Herein, so-called arrange body is the aggregate of needle crystal, and its implication is that the frequency of the matrix surface and the angle of each needle crystal formation is in the majority in specific angle (for example 90 degree).The scope of described regulation (distribution range of the length direction angulation of the matrix surface and first needle crystal) for example is 45 °～90 °.The distribution range of the length direction angulation of the matrix surface and second needle crystal for example also can be 0 ° (parallel with matrix surface)～90 ° (vertical with matrix surface).

At this, said needle crystal is so-called whisker (ウ イ ス カ one), is meant that the crystalline Aspect Ratio is as being more than 5.The long-width ratio of needle crystal is preferred more than 10, more preferably more than 100.In addition, pass the minimum length of center of gravity of the cross section (perpendicular to the cross section of length direction) of needle crystal, be preferably below the 500nm, more preferably below the 100nm, below the preferred especially 50nm.

Need to prove that such complex body also can use its needle crystal as the electrode of battery (devices of chemical ground accumulation of energys such as lithium ion battery, fuel cell) and the electron source of electronics releasing device.In this case, high (for example preferred more than 10) of the long-width ratio of preferred described needle crystal.

In needle crystal, contain flawless whiskers and have the crystal that spiral misplaces, also can contain polycrystalline and amorphous part.In addition, the needle crystal profile comprises cylinder, circular cone, six prismatic or go forward to hold level with both hands smooth shape (frustum of a cone) at circular cone, and the shape and the smooth shape of front end of cylinder front end point.In addition, the profile of needle crystal also comprises triprismo, rectangular pyramid, hecaprismo and polygonal pyramid shape in addition thereof, and the smooth shape of front end of these polygonal pyramids, the triangular prism, quadrangular, six prismatic and polygon prism shape in addition and the smooth shapes of these polygon prism front ends that also have triangular prism, quadrangular, six prismatic and polygon prism in addition and front end points thereof especially also comprise the shape of these shape bendings.

At this, compound, the doping agent that oxide compound also can be made up of at least a element among Zn, Ti, Zr, Hf, Ni, Fe, Co, Na, K, Li, Mg, Ca, Sr, Ba, Si, Al, Ga, In, V, Nb, Ta, W, Mo, Cr, the Sn and oxygen or also can be as the element of part replace oxygen and contain at least a among B, C, N, S, P, F, the Cl.

At this, so-called matrix is meant at least and keeps the material of needle crystal (arrange body) after needle crystal grown up, and the surface of matrix can be tabular surface also, have concavo-convex, sphere etc.The material of matrix, thickness, shape, optical characteristics can design as one sees fit according to desired weather resistance and design.For example, can use glass substrate as one sees fit, apply paper, pottery, the metal sheet of glass substrate, plastics, the band water-repellancy of nesa coating, metal sheet of moulding etc.

Also can make the c axle of the direction of described regulation and described needle crystal consistent, under this situation, the length direction of needle crystal also can be oriented in the direction of regulation.Under this situation, needle crystal is c axle orientation on the direction of this regulation.

Under this situation, if if the crystal system of needle crystal hexagonal system for example then at least at second area, is uniform perpendicular to the optical characteristics in the face of the direction of described regulation.Thus, inhomogeneous with regard to the optical characteristics that not do not cause because of the crystal orientation of birefringence level etc. for example, is being applied to this complex body under the situation of luminous element, can send uniform light.In addition, in this case, at second area, in perpendicular to the face of the direction of described regulation on the direction, not only electrical specification is even, and reduces can seek that this complex body is applied to luminous element the time luminous inhomogeneously, and the efficiency of conversion when being applied to photo-electric conversion element is stable.

This complex body can also contain a plurality of outside needle crystal of extending from the end of the opposition side of the described matrix of described needle crystal outside the orientation area of described needle crystal.

For example, this complex body is being applied under the situation of photo-electric conversion element, matrix is a transparency electrode, when needle crystal is pn combination a part of, can make light carry out opto-electronic conversion from matrix side direction pn joint portion incident.In this case, utilize outside needle crystal reflection (scattering) and import the pn joint portion, then can improve photoelectric transformation efficiency if pass the light of the arrange regional of needle crystal.

Described a plurality of outside needle crystal can with in the described arrange body generation interferential angular range not extended to direction at random yet.That is, outside needle crystal also can be the crystal in the export-oriented a plurality of axial growth of arrange regional of described needle crystal.In this case, for example in the embodiment of described photo-electric conversion element, can utilize outside crystallization that the light of the arrange regional that passes needle crystal is reflected expeditiously to the pn joint portion.In addition, by outside crystallization is set, can increase the surface coefficient of complex body.

Described needle crystal also can be made up of zinc oxide.

Also can there be crystal orientation a plurality of tiny areas at random near interface at described arrange body and described matrix.

When needle crystal is grown up, also can make needle crystal begin to grow up from particle as nuclear (seed crystal), under this situation, finish the back as described tiny area and remaining as at least a portion of the particle of nuclear in the growth of needle crystal sometimes.Utilize this tiny area can improve the tightness of needle crystal and matrix.Tiny area both can also can be made of different materials by forming with the needle crystal identical materials.In addition, tiny area both can be a fluor, also can be the material with electroconductibility of suitable electric conductivity.In these cases, can make complex body have suitable optics or electrology characteristic.

Photo-electric conversion element of the present invention possesses described complex body.The described arrange body of described complex body is a conductivity type, and this photo-electric conversion element also possesses the semiconductor portion with the surperficial opposed reverse conductivity type of described needle crystal.

A so-called conductivity type and reverse conductivity type are meant a side and the opposing party in p type and the n type.This photo-electric conversion element utilization by the arrange body of a conductivity type and oppositely the pn combination that forms of the semiconductor portion of conductivity type can carry out opto-electronic conversion.Because the surface of matrix is covered fully by arrange body (first and second needle crystal) in fact, thereby can isolate the semiconductor portion and the matrix of reverse conductivity type well, reduce contact area.Therefore, the semiconductor portion of reverse conductivity type and the leakage current between the matrix can be reduced, efficiency of conversion can be improved.

In addition, the semiconductor portion of so-called reverse conductivity type is the place that forms reverse conductivity type with respect to the arrange body of a conductivity type in fact, also can be to form the electrical conductor that Schottky combines with the semiconductor portion of a conductivity type.In this case, described electrical conductor is a side of p type and n type with respect to the conductivity type (conductivity type) of described semiconductor portion, and available the opposing party's conductivity type conducts electricity.

On photo-electric conversion element, contain organic EL, solar cell, photodetector (Off オ ト デ イ テ Network one) etc. herein.Matrix both also can be a metal electrode, also can be the material by the semi-conductor formation of a described conductivity type (conductivity type identical with arrange body).

This photo-electric conversion element also can be to dispose the so-called dye-sensitized photo-electric conversion element (solar cell) that light absorbing zone is a pigment between the semiconductor portion of the arrange body of a conductivity type and reverse conductivity type.

At this, it is electric energy that photo-electric conversion element also can contain transform light energy, and utilizes this electric energy to promote the photocatalyst of chemical reaction.

Photocatalyst will be used for the chemical reaction in photocatalyst surface by the electric energy that optical excitation stores, and for example can promote the decomposition of organism, water etc.Light-catalyzed reaction belongs to the photoelectrochemistry reaction.As the application examples of photo-electric conversion element, the example (with reference to described non-patent literature 7) that light-catalyzed reaction takes place is arranged.

The arrange body of the needle crystal among the present invention also can be made of (containing photocatalyst) photocatalyst, and in this case, this arrange body can be used as photochemical catalyst electrode and uses.The arrange body of the needle crystal among the present invention is because its surface-area is big, so be made of the reaction efficiency height of this needle crystal (arrange body) of (containing) photocatalyst.

In addition, when the arrange body of the needle crystal among the present invention uses as photochemical catalyst electrode, arrange body promotes the chemical reaction (for example oxidizing reaction) by a side in electronics and hole, the opposing party from matrix conveying electronic and hole, can carry out different reaction (for example, reduction reaction) in other system.At this, so-called other system for example also can be the system that contains the pole plate (for example material of being made up of platinum) that is electrically connected with matrix.

All the time, for augmenting response heap (anti-ying Games), be photocatalyst the surface area and be extensive use of particulate photocatalyst.This particulate photocatalyst is dispersed in and accepts rayed in the system.So, can improve effective surface area.But, be present in same photocatalyst inside owing to carry out the electronics and the hole of various differential responses, thereby be easy to carry out the combination again in electronics and hole.In addition, in this system, also be easy to carry out the combination again in electronics and hole by making each photocatalyst contact.

With regard to complex body of the present invention, because a plurality of needle crystals can make the state of electrical connection, so in system that contains aforesaid arrange body and other system, can produce by a side in each electronics and hole and the opposing party's reaction.That is,, be difficult for taking place the combination again in electronics and hole owing to can under the state of the reactor in insulating electron and hole, carry out chemical reaction.In addition, because needle crystal covers matrix in fact, so also reduced the electronics that is transported to matrix or hole and hole or electronics bonded probability again.

All the time, also will constitute and use as electrode by semi-conductor for flat photocatalyst.Even form the photocatalyst of above-mentioned planar electrode, also can reduce electronics and hole bonded probability again.But, owing to can not utilize this electrode shape to increase effective surface area, thereby reaction efficiency is low.

In the present application, contain at arrange body under the situation of photocatalyst, can get both increases effective surface area to improve reaction efficiency and to reduce combining again of electronics and hole.

As the purposes of photocatalyst,, can adjust absorption limit wavelength etc. by in arrange body, mixing or a part of oxygen in the arrange body being replaced as nitrogen.For example, by sintering in the part of gallium being mixed the zinc oxide arrange body and in ammonia atmosphere, can make the gallium nitrogenize (oxygen in the zinc oxide arrange body is replaced into nitrogen) of mixing.Proved already, but this material uses the luminous energy water of decomposition of visible-range.

Luminous element of the present invention possesses described complex body.The described arrange body of described complex body is a conductivity type, and this luminous element also possesses the semiconductor portion with the surperficial opposed reverse conductivity type of described needle crystal.

At this, luminous element comprises semiconductor light-emitting elements (photorectifier), semiconductor laser etc.Matrix also can be a metal electrode, also can be made of the semi-conductor of a described conductivity type (conductivity type identical with described arrange body).

This luminous element can produce the light that sends because of the combination again in electronics and hole by applying suitable voltage by the arrange body of a conductivity type with on the pn joint portion that oppositely semiconductor portion of conductivity type forms.Because the surface of matrix covers fully with arrange body in fact, thereby has isolated the semiconductor portion and the matrix of reverse conductivity type well, reduce contact area.Therefore, the semiconductor portion of reverse conductivity type and the leakage current between the matrix can be reduced, luminous efficiency can be improved.

In photo-electric conversion element of the present invention and luminous element, the arrange body of a conductivity type and the semiconductor portion of reverse conductivity type also can be used as and are subjected to luminescent material (under the situation of photo-electric conversion element) and luminescent material (under the situation of luminous element) performance function.In addition, photo-electric conversion element of the present invention and luminous element for example also can be at the arrange bodies of a conductivity type and oppositely equipment is non-between the semiconductor portion of conductivity type adulteratedly is subjected to light/luminescent material or equips the doping light/luminescent material that is subjected in order to change optical characteristics.

At this, the so-called light/luminescent material that is subjected to is to utilize band gap (band gap) that light is converted to the material of electricity or electricity is converted to the material of light, uses organic pigment, pigment, fluor, semi-conductor usually.As long as show opto-electronic conversion or luminous function, though be crystalloid, amorphousness, unit molecule, or form such as association body can.

An aspect of of the present present invention provides a kind of electrical condenser, and it possesses described complex body.The described arrange body of described complex body is as first electrode performance function, and this electrical condenser also possesses and second electrode and the dielectric medium between described first electrode and described second electrode of described first electrode contraposition.

At this, so-called electrical condenser is meant the device of physical storage electric charge.

Because the surface of matrix is covered fully by arrange body in fact, thereby isolation dielectric and matrix well, contact area reduced.That is, dielectric medium in fact only contacts with first electrode (arrange body) at the opposition side of second electrode.Therefore, under the situation that needle crystal is made of single-material (zinc oxide), can either on dielectric medium, apply voltage equably, can between matrix and arrange body, not form electrical double layer again.So this electrical condenser can improve electrostatic capacitance.

Another aspect of the present invention provides a kind of electrical condenser, and it possesses described complex body.The described arrange body of described complex body is as first polarizing electrode performance function, and this electrical condenser also possesses and opposed second polarizing electrode of described first polarizing electrode and the electrolyte solution between described first polarizing electrode and described second polarizing electrode.

This electrical condenser also can be the so-called electric double layer capacitor that forms electrical double layer at the near interface of first and second polarizing electrode and electrolyte solution.Because the surface of matrix is covered fully by arrange body in fact, thereby has isolated electrolyte solution and matrix well, reduce contact area.Therefore,, also can reduce the leakage current after the full charging, can avoid meaningless power consumption even constitute at matrix under the situation of a part of electrode.

In addition, with the corresponding electric double layer capacitor of rapid charge in, electrolyte solution contains superfluous ionogen, even also have ionogen in the electrolyte solution under the state of full charging.Electrolyte solution is if contact with matrix as side's electrode, then at the after-current that completely charges (leakage current) by remaining ionogen and mobile between two electrodes, cause the consumption of meaningless electric power.On the other hand, as electrical condenser of the present invention, electrolyte solution not with situation that matrix (electrode) contacts under, can suppress this electric current.Certainly, even do not applying after the charging under the state of voltage (discharge process), also can suppress meaningless power consumption is that inversion electron moves.

At this, electrolyte solution (electrolytic solution) also can be any one of the solution of anhydrous solvent system and aqueous solution.The anhydrous solvent electrolyte solution is to have dissolved electrolytical solution in organic solvent, as organic solvent, for example can use ethylene carbonate, Texacar PC, carbonic acid 1-Aden ester, tetramethylene sulfone, γ-butyl lactone, dimethyl sulfoxide (DMSO), dimethyl formamide, acetonitrile, tetrahydrofuran (THF), glycol dimethyl ether etc.Also can use described two or more mixture.

As anhydrous solvent is the ionogen of electrolyte solution, can use (C ₂H ₅) ₄PBF ₄, (C ₃H ₇) ₄PBF ₄, (C ₂H ₅) ₄NBF ₄, (C ₃H ₇) ₄NBF ₄, (C ₂H ₅) ₄PPF ₆, (C ₂H ₅) ₄PCF ₃SO ₃, LiBF ₄, LiClO ₄, LiCF ₃SO ₃Deng.As the ionogen of water system electrolyte solution, can use NaCl, NaOH, HCl, H ₂SO ₄, Li ₂SO ₄Deng.Perhaps can use polymer-type electrolyte solution that has added polymer substance therein etc.

An aspect of of the present present invention provides the manufacture method of a species complex, it is characterized in that, comprises following operation: utilize to comprise to be selected from X ¹OH (in the formula, X ¹Any element of expression Na, K and Cs), X ² ₂CO ₃(in the formula, X ²Any element of expression H, Na, K and Cs) and NH ₃In at least a alkali and pH value apply method at the electroless plating of the plating solution more than 13, by a plurality of crystal grain, be to form described needle crystal in the substrate that constitutes of crystal orientation crystal grain at random.

Another aspect of the present invention provides the manufacture method of a species complex, it is characterized in that, comprises following operation: utilize to comprise to be selected from X ¹OH (in the formula, X ¹Any element of expression Na, K and Cs), X ² ₂CO ₃(in the formula, X ²Any element of expression H, Na, K and Cs) and NH ₃In at least a alkali and pH value apply method at the electroless plating of the plating solution more than 13, be wetting ability and on the surface for forming described needle crystal in amorphous substrate.

Also can utilize to comprise and be selected from X ¹OH (in the formula, X ¹Any element of expression Na, K and Cs), X ² ₂CO ₃(in the formula, X ²Any element of expression H, Na, K and Cs) and NH ₃In at least a alkali and pH value apply method at the electroless plating of the plating solution more than 13, be to form needle crystal in wetting ability and the substrate that constitutes by resin on the surface.

At room temperature, by described alkali is carried out ionization/make its ionization in plating solution, can accomplish in plating solution, to exist hydroxide ion.

Manufacturing method according to the invention can be made described complex body.That is,, a plurality of needle crystals that become various angle growths from suprabasil starting point, with matrix surface can be formed, simultaneously, the densification of suprabasil growth starting point can be made according to this manufacture method.In addition, according to this manufacture method, can be from a starting point a plurality of needle crystals of growing.

Relative therewith, under the situation of not using described material as the alkali of plating solution, with and/or when using the plating solution of pH value less than 13, the growth pattern of needle crystal differs widely, cause to make suprabasil starting point chap or make direction of growth unanimity, can not substantially cover matrix fully with needle crystal (arrange body).

In addition, do not satisfy under the situation of material as substrate of described prescribed condition having to use, for example used under the situation of material of crystal orientation unanimity of each one of i.e. this substrate of substrate of crystalloid, cause the direction of growth unanimity of needle crystal, still can not substantially cover matrix fully with needle crystal (arrange body).

The surperficial angulation to matrix in the needle crystal enters long first needle crystal that is grown to serve as longways of needle-like crystal (for example being bordering on the crystal at right angle with the matrix surface angulation) that the direction in the angular range of regulation is extended.On the other hand, in the needle crystal and surperficial angulation matrix be beyond the described predetermined angular scope needle crystal (for example, with the crystal of substrate surface angulation away from the right angle) and the angular range of described regulation in a crystalline part, be subjected to grow longways, be formed on second needle crystal that matrix surface covers the exposed division that exposes from first needle crystal in fact fully from the prevention of the needle crystal of adjacent other starting point growth.

By using described plating solution, the material that can have a hydroxy with the surface is that catalyzer impels the needle crystal growth.Herein, so-called surface has the material of hydroxy, it is the material that in structural formula, contains the material of OH base or when contacting, form the OH base on the surface with water, can use the mineral compound of being made up of at least a element in the middle of Zn, Ti, Zr, Hf, Ni, Fe, Co, Na, K, Li, Mg, Ca, Sr, Ba, Si, Al, Ga, In, V, Nb, Ta, W, Mo, Cr, Eu, Y, La, Gd, Tb, Ce, Nd, Sm, Rb and the Cs and oxygen, perhaps the polymkeric substance with polyvinyl alcohol or polyvinyl alcohol is the organic compound of representative.When the material that has a hydroxy when the surface was made of mineral compound, this mineral compound also can contain at least a element among B, C, N, S, P, F and the Cl as doping agent.Material and crystalloid, amorphousness that the surface has hydroxy have nothing to do.

At this, so-called electroless plating applies method, is not that electricity decomposes, carry out chemistry, thermal response but be called, the object of separating out is carried out the method for plating, be a kind of by with matrix impregnation (dipping) in plating solution, the temperature of plating solution is set at the method that specified temperature is carried out plating.

At this, so-called plating solution is to contain with water, organic solvent or their mixed solution as solvent, at least a above with the raw material of substance that carries out plating as solute, and promote the solution that electroless plating is deposited with the additive in the solution.In the present invention, substance contains the alkali that is useful on the pH value of adjusting plating solution at least.

At this, so-called surperficial hydroxy, as everyone knows, be to utilize the absorption etc. of water molecules and the hydroxy that is present in material surface, not only as adsorption site performance function, and as the various reacting environment such as generation refining, silicon alkoxide of halogenation, esterification, salt play a role (with reference to described non-patent literature 6).The surperficial hydroxy of oxide compound, oxynitride etc., and the surperficial hydroxy that causes such as OH base, ketone group, carboxyl extensively exist, they are as reacting environment or absorption place performance function.

At this, can list aromatic series such as ethanol, methyl alcohol, Virahol, butanols, methyl ethyl diketone, acetonitrile, ethylene glycol, benzene etc. as organic solvent.

At this, raw material as the material that carries out plating is a metallic compound, for example can enumerate the salt of at least a type among metal nitrate, metal acetate salt, metal-salt hydrochlorate, metal oxalate, metal alkoxide, metal carbonate, metal sulfate, the metal hydroxides.At this, metal can be any one among Zn, Ti, Zr, Hf, Ni, Fe, Co, Na, K, Li, Mg, Ca, Sr, Ba, Si, Al, Ga, In, V, Nb, Ta, W, Mo, Cr, Eu, Y, La, Gd, Tb, Ce, Nd, Sm, Rb and the Cs.In addition, the raw material that carries out the material of plating also can have the form of hydrate in order to use stable material.

At this, as the additive in the solution, for example can enumerate metal hydroxides, metal bicarbonate oxide compound, metal chloride, metal nitrate, metal acetate salt, metal carbonate, metal alkoxide, metal sulfate, metal oxalate, interfacial agent etc.At this, the metal in the additive can be any one in the middle of Zn, Ti, Zr, Hf, Ni, Fe, Co, Na, K, Li, Mg, Ca, Sr, Ba, Si, Al, Ga, In, V, Nb, Ta, W, Mo, Cr, Eu, Y, La, Gd, Tb, Ce, Nd, Sm, Rb and the Cs.At this, so-called interfacial agent is nonionic, positively charged ion, negatively charged ion, reaches the interfacial agent that has positively charged ion and anionic amphoteric any type simultaneously, carry out electroless plating and apply if add these interfacial agents to plating solution, then realize the refinement of the brilliant warp of needle crystal that constitutes by zinc oxide and the effect of high length and widthization.

Described substrate also can comprise the surface portion of described matrix.

In addition, manufacture method of the present invention can also be included in the operation of the surface configuration particle of described matrix, and in this case, described substrate also can comprise the particle that is disposed on the described matrix.In this case, the growth of needle crystal with described particle as nuclear.

Do not satisfy on the surface of matrix under the situation of prerequisite of described substrate, promptly, by a plurality of crystal grain, be that crystal orientation crystal grain at random constitutes, and surface be wetting ability and for amorphous prerequisite which does not all have under the satisfied situation, if make needle crystal directly from the matrix surface growth, the crystal orientation that then causes needle crystal sometimes is a direction of growth unanimity.

In this case, if be disposed at the prerequisite that particle on the matrix satisfies described substrate, also can make at random from the crystal orientation of the needle crystal of particle (material) growth with surperficial hydroxy.Sheng Chang this shape crystallization combination owing to become three-dimensional the interference each other at random is so its result can cover matrix in fact in the first area of the arrange body of needle crystal.

In the operation of configuration particle, also can comprise this particle (particulate) is scattered in and make hydrosol in the solution, again this hydrosol flooded coating, spray coating, rotate coating or be instilled into operation on the matrix, also can comprise as required and carry out drying and/or agglomerating operation.

Utilize these methods, can will show crystallinity and have the particle of crystal orientation at random or the surface that amorphous particle is disposed at matrix at an easy rate.

Described particle also can be by constituting with described tiny area identical materials.

The operation that disposes described particle also can be included in form on the described matrix constitute by described particle, mean thickness is the operation of the film below the 50nm.

Thus, can make needle crystal (arrange body) be difficult to peel off from matrix.

Dispose the operation of described particle, preferably be contained on the described matrix form constitute by described particle, mean thickness is the operation of the film below the 20nm.

Thus, can make needle crystal (arrange body) more be difficult to peel off from matrix.

The mean thickness of film, for example when needle crystal is grown, can attenuation by including described particle in needle crystal.The mean thickness of described film preferably is below the 50nm, more preferably below the 20nm when the growth of needle crystal begins.

By the film that described particle constitutes, particle exists on substrate equably, also can have the space, and the surface also can have concavo-convex.

Plating solution is if comprise the alkali of 0.001 volumetric molar concentration～2 volumetric molar concentrations, even then the thickness of the film that is made of the particle as the growth starting point is little, also can obtain covering in fact fully the arrange body of the needle crystal of matrix.According to the present invention,,,, also can use the needle crystal that constitutes by zinc oxide to cover matrix fully in fact even having on the described film under the situation of pin hole by improving the zinc concentration in the plating solution if the pH value of plating solution is more than 13.

Although still do not understand the mechanism that produces this phenomenon, but can infer, utilize acidity, surface energy that the concentration of alkali makes catalytic activity, the hydroxy of the electrical characteristic of plating solution and heat conductivity, surperficial hydroxy etc. to change, thus, make the speed of growth of needle crystal and change with euhedral etc. the shape of wetting quality, the crystallization of matrix etc.

The operation that disposes described particle also can comprise following operation, that is, the operation of the precursor of the material of the described particle of configuration formation forms the operation of described particle with decomposing described precursor on described matrix.

For example, the operation of configuration particle also can comprise following operation, that is, the precursor that forms the desired compound of described particle is distributed in the solvent, and this solvent is being flooded coating, sprays coating, rotates coating or is being instilled into operation on the matrix on the matrix; And by described precursor drying and/or sintering are carried out thermolysis on matrix the operation of the desired described particle of configuration.

At this,, can enumerate by thermolysis, add water decomposition, dehydrating condensation and plasma irradiation and the decomposition carried out as the example that decomposes.

Description of drawings

Fig. 1 is the schematic cross sectional view of the photo-electric conversion element of first embodiment of the invention;

Fig. 2 is the schematic cross sectional view of the photo-electric conversion element of second embodiment of the invention;

Fig. 3 is the schematic cross sectional view of the photo-electric conversion element of third embodiment of the invention;

Fig. 4 is the schematic cross sectional view of the electrical condenser of first embodiment of the invention;

Fig. 5 is the schematic cross sectional view of the electrical condenser of second embodiment of the invention;

Fig. 6 is the sectional view of expression electroless plating matrix posture in the reaction vessel when applying;

Fig. 7 A is the electron scanning micrograph of the arrange body of embodiment 1;

Fig. 7 B peels off the arrange body shown in Fig. 7 A from matrix, the electron scanning micrograph of this arrange body that photographs from a side that has matrix to exist;

Fig. 8 A is the electron scanning micrograph of the arrange body of embodiment 2;

The figure of Fig. 8 B X-ray diffraction figure that to be expression measure the opposition side (second area) of the side (first area) that disposes matrix of the arrange body shown in Fig. 8 A and matrix.

Fig. 9 is the electron scanning micrograph of the arrange body (first sample) of embodiment 3;

Figure 10 is the electron scanning micrograph of the arrange body (second sample) of embodiment 3;

The complex body of Figure 11 matrix exposed type that to be the expression matrix expose from the arrange body of needle crystal and the matrix that utilizes the arrange body of needle crystal to cover matrix in fact are capped the figure of I-E characteristic of the complex body of type;

Figure 12 is the figure of I-E characteristic of dye-sensitized solar cell of arrange body that represents to have used respectively the arrange body of the zinc oxide needle crystal that the part of matrix exposes and cover the zinc oxide needle crystal of matrix in fact;

Figure 13 A is the figure of expression from the EBSP of the arrange body of first area side observation zinc oxide needle crystal;

Figure 13 B is the figure of expression from the EBSP of the arrange body of second area side observation zinc oxide needle crystal;

Figure 14 A is that the number of degrees of zinc oxide needle crystal in the face orientation of first area side distribute;

Figure 14 B is that the number of degrees of zinc oxide needle crystal in the face orientation of second area side distribute;

Figure 15 be utilize the needle crystal arrange body, by the film that constitutes of zinc oxide needle crystal that does not have orientation, and the impedance measuring of the film that constitutes by the zinc oxide particle and the template chart that obtains.

Nomenclature

1,1A, 11: photo-electric conversion element

2: transparency electrode

3,23,33: needle crystal

3A, 23A, 33A: first needle crystal

3B, 23B, 33B: second needle crystal

3C: the 3rd needle crystal (outside needle crystal)

4,24,34: arrange body

5:p N-type semiconductorN portion

7,27: tiny area

10,20,30,40: complex body

21,31: electrical condenser

22: memory node

25: protective membrane

32: substrate

35: electrolyte solution

123: plating solution

124: matrix

R1, R21: first area

R2, R22: second area

S: starting point

Embodiment

Below, describe embodiments of the present invention with reference to the accompanying drawings in detail.

Fig. 1 is the schematic cross sectional view of the photo-electric conversion element of first embodiment of the invention.

This photo-electric conversion element 1 possesses complex body 10, and this complex body 10 comprises the transparency electrode 2 that forms matrix, the arrange body 4 that is formed at a plurality of needle crystals 3 on the transparency electrode 2.Transparency electrode 2 is for example by the stannic oxide (SnO of mixed fluorine (F) ₂) constitute, for example can on glass substrate, form smooth membranaceous.

Needle crystal 3 comprises the first needle crystal 3A and the second needle crystal 3B, wherein, each of a plurality of starting point S that the first needle crystal 3A disposes from space on the surface of transparency electrode 2 begins to form almost 90 ° direction (perpendicular to the surface of transparency electrode 2) extension to the surface with transparency electrode 2, the second needle crystal 3B is shorter than the described first needle crystal 3A, and extends to the direction that comprises perpendicular to the more wide range (for example the surperficial angulation with transparency electrode 2 is 0 °～90 °) of the direction on the surface of transparency electrode 2 from each starting point S.In first and second needle crystal 3A, 3B, make length direction consistent with the c axle.The first needle crystal 3A has length much at one.

Single or multiple first needle crystal 3A and the single or multiple second needle crystal 3B extend since a starting point S.Between two first adjacent needle crystal 3A, there is the gap.The front end (opposition side of transparency electrode 2) of the second needle crystal 3B that begins to extend from any starting point S, butt or near first needle crystal 3A that begins to extend from another starting point S adjacent or the side of the second needle crystal 3B with this starting point S.

The exposed division that exposes from the first needle crystal 3A on the surface of transparency electrode 2 by the second needle crystal 3B in fact (fully) cover.That is, the surface of transparency electrode 2 is almost completely covered by needle crystal 3 (first and second needle crystal 3A, 3B).Therefore, with respect to this arrange body 4, the opposition side of transparency electrode 2 and transparency electrode 2 is isolated well.

The second needle crystal 3B is in the direction perpendicular to the surface of transparency electrode 2, it is present in zone (following abbreviation " the first area ") R1 of the near surface of transparency electrode 2, and is not present in zone (below abbreviation " the second area ") R2 of the front of the first needle crystal 3A in the orientation area of needle crystal 3.So, occupy cross section (area) ratio of needle crystal 3 of the face on the surface that is parallel to transparency electrode 2, at second area R2 than low at first area R1.The orientation of needle crystal 3, first area R1 is lower than second area R2.Needle crystal 3 as a whole (at least with regard to second area R2) along c axle orientation (the c axle is along the probability height of specific direction (perpendicular to the direction on the surface of transparency electrode 2)).

Needle crystal 3 for example is made of the zinc oxide of the gallium that mixed, and is the n N-type semiconductorN.

(mainly be starting point S near) between transparency electrode 2 and the arrange body 2, a plurality of tiny areas 7 that exist the crystallization by zinc oxide to constitute.The crystal orientation of each tiny area 7 is at random, and is not necessarily consistent with the crystal orientation of needle crystal 3.

The opposite electrode 6 that is provided with and transparency electrode 2 be parallel opposed almost, and with arrange body 4 (front end of the first needle crystal 3A) across a little interval.Opposite electrode 6 for example is made of the multilayer electrode of nickel and gold.

Be provided with p N-type semiconductorN portion 5 in the mode that is embedded in the space (comprising the gap of the first adjacent needle crystal 3A and the front end of the first needle crystal 3A and the gap of opposite electrode 6) between arrange body 4 and the opposite electrode 6.P-type semiconductor portion 5 for example is made of the zinc oxide or the tin sulfide of the nitrogen that mixed.Because first and second needle crystal 3A, 3B almost completely are covered with the surface of transparency electrode 2, so reduced the contact area of P-type semiconductor portion 5 and transparency electrode 2.

The needle crystal 3 and the p N-type semiconductorN portion 5 that are used as the n N-type semiconductorN form the pn knot.Between needle crystal 3 (n N-type semiconductorN) and p N-type semiconductorN portion 5 (near interface), be provided with pigment particle 8 as light absorbing material.

In this photo-electric conversion element 1, if light incides the pn joint portion from transparency electrode 2 sides, will produce electron-hole pair in the pn joint portion, hole and electronics move to opposite electrode 6 and transparency electrode 2 respectively.So just produced photoelectric current (photoelectromotive force).At this moment, pigment particle 8 plays a part the photoabsorption of auxiliary activity layer (needle crystal 3 and p N-type semiconductorN portion 5).Thus, can absorb the interior light of introducing element effectively.

By using needle crystal 3, make useful area become big with respect to first and second needle electrode 3A, the 3B shadow area on matrix (transparency electrode 2).So, can make the area at the interface of needle crystal 3 (n N-type semiconductorN) and p N-type semiconductorN portion 5 become big, obtain big photoelectric current (photoelectromotive force).In this case, needle crystal 3 (n N-type semiconductorN) and p N-type semiconductorN portion 5 are as being subjected to luminescent material performance function.

In addition, because by reducing the contact area of p N-type semiconductorN portion 5 and transparency electrode 2, reduced that inversion electron moves and leakage current, so the efficiency of conversion height of this photo-electric conversion element 1.

In addition, because the first needle crystal 3A length direction and c axle almost vertical with the surface of transparency electrode 2 and the first needle crystal 3A are consistent, so when the crystal system of needle crystal 3 for example is the situation etc. of hexagonal system, at second area R2, be parallel to that optics and the electrochemical properties in the direction becomes evenly in the face on surface of transparency electrode 2, improved complex body 10 perpendicular to the optical transparence on the direction on the surface of transparency electrode 2.

But tiny area 7 also can be used as the particle performance function of scattered light.In this case, from effect, can realize the raising of the photoelectric transformation efficiency that causes because of effect that light cuts off in the scattering of light of element internal.In addition, tiny area 7 also can be the electroconductibility fine particle.In this case, can assist the electrical connection of transparency electrode 2 and arrange body 4.In addition, tiny area 7 also can be the fluorophor particle with wavelength Conversion function.In this case, with the light of the wavelength of photoelectricity conversion elements 1 not available extinction sensitivity,, photo-electric conversion element 1 is absorbed, and then can improve photoelectric transformation efficiency by carrying out wavelength Conversion with tiny area 7 (fluorophor particle).Can there be tiny area 7 yet.

The structure of this photo-electric conversion element 1 can be applicable to luminous element.In this case, on the pn joint portion that arrange body 4 and p N-type semiconductorN portion 5 by the n type form, apply suitable voltage by utilizing transparency electrode 2 and opposite electrode 6, can produce because of electronics and hole again in conjunction with the light that generates.At this moment, by making needle crystal 3, can inject electronics equably to each needle crystal 3 in c axle orientation.

In addition, in such luminous element, because arrange body 4 is covered with transparency electrode 2 in fact fully, so p N-type semiconductorN portion 5 is isolated well with transparency electrode 2 and do not contact.Therefore, the leakage current between p N-type semiconductorN portion 5 and the transparency electrode 2 can be reduced, luminous efficiency can be improved.

Under the situation of luminous element, if but tiny area 7 is brought into play function as the particle of scattered light, then from effect, for example owing to the angle of light that incides the interface of this element and air can be changed and can improve external quantum efficiency in the scattering of light of element internal.

With respect to arrange body 4, form the transparency electrode 2 of matrix and the opposition side of transparency electrode 2, in fact only isolate well by arrange body 4 (needle crystal 3), between needle crystal 3, be not provided for this isolated isolator.Thus, make the effective surface area of needle crystal 3 become big.

In addition, owing to do not use the isolator of the opposition side that is used to isolate transparency electrode 2 sides and transparency electrode 2, so in this photo-electric conversion element (perhaps luminous element) 1, deterioration and painted cause bad because of this isolator can not taken place, and the diffusion of impurity in device because of using this isolator to cause.

Fig. 2 is the schematic cross sectional view of the photo-electric conversion element of second embodiment of the invention.In Fig. 2, to reference symbol and the omission explanation identical of the corresponding part mark of each as shown in Figure 1 with Fig. 1.

With regard to this photo-electric conversion element 1A, complex body 20 possesses a plurality of the 3rd needle crystals (outside needle crystal) 3C, and the 3rd needle crystal 3C begins to extend from the front end of specific (partial) first needle crystal 3A.Also there is the first needle crystal 3A that does not begin to extend the 3rd needle crystal 3C from its front end.Begin to extend the first needle crystal 3A of the 3rd needle crystal 3C from front end among the first needle crystal 3A, for example shared ratio is per 10000～50000 one.The 3rd needle crystal 3C extends outside the arrange regional of the first needle crystal 3A.In addition, the 3rd needle crystal 3C extends towards direction (a plurality of direction of principal axis) at random in the angular range that does not disturb arrange body 4.

Because the existence of the 3rd needle crystal 3C, compare with the situation of as shown in Figure 1 photo-electric conversion element 1, become big with respect to first～the 3rd needle crystal 3A～3C to the effective surface area of the shadow area of transparency electrode 2.Therefore, under the situation that the 3rd needle crystal 3C is made of n N-type semiconductorN (preferably with the first needle crystal 3A identical materials), compare with the situation of photo-electric conversion element 1 shown in Figure 1, the area of pn bonding interface is increased, thereby can increase the photoelectric current that is produced.

In addition, in this photo-electric conversion element 1A, can reach following effect, promptly the 3rd needle crystal 3C along a plurality of axial growth makes light generation scattering.So, shown in arrow L among Fig. 2, from transparency electrode 2 side incident, do not absorbed and once passing the light of arrange body 4 by the pn bonding interface, after being reflected by the 3rd needle crystal 3C again conduction give the pn joint portion, thereby the efficiency of conversion of photo-electric conversion element 1A is improved.

The 3rd needle crystal 3C not necessarily is exactly the n N-type semiconductorN.In this case, though can not get, can obtain being reflected back toward the effect of the efficiency of conversion increase that the pn bonding interface brings because of the light that passes arrange body 4 because of the area of pn bonding interface increases the effect that the photoelectric current that brings increases.

The structure of this photo-electric conversion element 1A can be applied to sealed cell.In this case, conduct and give transparency electrode 2 sides owing to being reflected (scattering) by the 3rd needle crystal 3C near send to the opposition side of transparency electrode 2 the pn bonding interface light, so, outside efficient of taking out the light that is produced can be improved.

Fig. 3 is the schematic cross sectional view of the photo-electric conversion element of third embodiment of the invention.In Fig. 3, to reference symbol and the omission explanation identical with Fig. 1 with the corresponding part mark of each several part shown in Figure 1.

With regard to this photo-electric conversion element 11, in the space of the opposition side of transparency electrode 2, the sensitive layer 9 that the surface of needle crystal 3 is contained pigment covers with respect to arrange body 4.Because the surface of transparency electrode 2 is almost completely covered by needle crystal 3, so reduced the contact area of sensitive layer 9 and transparency electrode 2.Sensitive layer 9 has the spatial thickness that is unlikely between the fully embedding adjacent first needle crystal 3A.

The surface of sensitive layer 9 (face of the opposition side on the surface of needle crystal 3) is covered by p N-type semiconductorN portion 5.Space between the first adjacent needle crystal 3A is almost completely buried by sensitive layer 9 and p N-type semiconductorN portion 5.

This photo-electric conversion element 11 utilizes the light that is absorbed by sensitive layer 9 can generate photoelectric current.By reducing the contact area of sensitive layer 5 and transparency electrode 2, can reduce leakage current.That is, under sensitive layer 9 and situation that transparency electrode 2 contacts, carry holes by certain probability to transparency electrode 2 from sensitive layer 9.On the other hand, from needle crystal 3 to transparency electrode 2 conveying electronics.Therefore, cause uprising in conjunction with probability again of electronics in the transparency electrode 2 and hole, reduced luminous efficiency.By reducing the contact area of sensitive layer 9 and transparency electrode 2, can avoid such state of affairs.

Fig. 4 is the schematic cross sectional view of structure of the electrical condenser of expression first embodiment of the invention.

This electrical condenser 21 possesses complex body 30, and this complex body 30 comprises the flat memory node 22 of forming matrix and is formed at the arrange body 24 of a plurality of needle crystals 23 on the memory node 22.Memory node 22 and needle crystal 23 all have electroconductibility, and constitute an electrode for capacitors of electrical condenser 21.Memory node 22 and needle crystal 23 for example are made of the zinc oxide of having been changed by conduction by adulterated al.

Needle crystal 23 comprises the first needle crystal 23A and the second needle crystal 23B, wherein, each of a plurality of starting point S that the first needle crystal 23A disposes from space on the surface of memory node 22 begins to form almost 90 ° direction (perpendicular to the surface of memory node 22) extension to the surface with memory node 22, the second needle crystal 23B is shorter than the described first needle crystal 23A, and extends to the direction that comprises perpendicular to the more wide range (for example the surperficial angulation with memory node 22 is 0 °～90 °) of the direction on the surface of memory node 22 from each starting point S.In first and second needle crystal 23A, 23B, length direction is consistent with the c axle.The first needle crystal 23A has length much at one.

Single or multiple first needle crystal 23A and the single or multiple second needle crystal 23B extend since a starting point S.Between two first adjacent needle crystal 23A, there is the gap.The front end (end of the opposition side of memory node 22) of the second needle crystal 23B that begins to extend from any starting point S, butt or near first needle crystal 23A that begins to extend from another starting point S adjacent or the side of the second needle crystal 23B with this starting point S.

The exposed division that exposes from the first needle crystal 23A on the surface of memory node 22 is fully covered by the second needle crystal 23B in fact.That is, the surface of memory node 22 is almost completely covered by needle crystal 23 (first and second needle crystal 23A, 23B).Therefore, with respect to this arrange body 24, the opposition side of memory node 22 and memory node 22 is isolated well.

The second needle crystal 23B is in the direction perpendicular to the surface of memory node 22, it is present in zone (following abbreviation " the first area ") R21 of the near surface of memory node 22, and is not present in zone (below abbreviation " the second area ") R22 of the front of the first needle crystal 23A in the arrange regional of needle crystal 23.So, occupy the ratio in cross section (area) of needle crystal 23 of the face on the surface that is parallel to memory node 22, at second area R22 than lower at first area R21.The orientation of needle crystal 23, first area R21 is lower than second area R22.Needle crystal 23 (at least with regard to second area R22) as a whole is orientated along the c axle.

(mainly be starting point S near) between memory node 22 and the arrange body 24, a plurality of tiny areas 27 that exist the crystallization by zinc oxide to constitute.The crystal orientation of each tiny area 27 is at random, and is not necessarily consistent with the crystal orientation of needle crystal 23.

In the space with respect to the opposition side of the memory node 22 of arrange body 24, the protective membrane (insulating film) 25 that the surface of needle crystal 23 is made of dielectric medium covers.Because the surface of memory node 22 is almost completely covered by needle crystal 23, so reduced the contact area of protective membrane 25 and memory node 22.Protective membrane 25 has the spatial thickness that is unlikely to bury between the first adjacent needle crystal 23A.Protective membrane 25 for example is made of the zinc oxide of the matter that undopes.

The surface of protective membrane 25 (face of the opposition side on the surface of needle crystal 23) is covered by unit plate 26.Unit plate 26 has electroconductibility, becomes another electrode for capacitors.Unit plate 26 for example is made of the zinc oxide of the aluminium that mixed.Space between the first adjacent needle crystal 23A is almost completely buried by protective membrane 25 and unit plate 26.The surface of unit plate 26 (face of the opposition side on the surface of protective membrane 25) is covered by protective membrane (insulating film) 28.Protective membrane 28 for example is made of the zinc oxide of the matter that undopes.

As mentioned above, to have dielectric medium be that to be clipped in an electrode for capacitors be that needle crystal 23 (and memory node 22) and another electrode for capacitors are the structure between the unit plate 26 to protective membrane 25 to this electrical condenser 21.This electrical condenser 21, by between memory node 22 and unit plate 26, applying voltage, can be with Charge Storage at the near interface of needle crystal 23 and protective membrane 25 and the near interface of unit plate 26 and protective membrane 25.Because protective membrane 25 has along the shape on the surface of needle crystal 23, thereby because increase the interfacial area of protective membrane 25 and needle crystal 23 and unit plate 26, the electrostatic capacitance of this electrical condenser 21 is big.

In addition, protective membrane 25 contacts memory node 22 hardly, and with respect to the opposition side of protective membrane 25 at unit plate 26, protective membrane 25 in fact only contacts with the arrange body 24 of needle crystal 23.Therefore, under the situation that needle crystal 23 is made of single material (oxide compound), can on protective membrane 25, apply voltage equably, in addition, between memory node 22 and arrange body 24, can not form electrical double layer.Therefore, can improve the electrostatic capacitance of this electrical condenser 22.

In addition, by making needle crystal 23 c axle orientation as a whole, at least in second area R22, with vertical interior direction of this differently-oriented directivity on, make electrical characteristic become even.

As mentioned above, this electrical condenser 21 can be from memory node 22 to protective membrane 28, is formed by the zinc oxide that has or not that only changes doping agent.Certainly, each one of 28 (local or whole) also can be formed by the material beyond the zinc oxide from memory node 22 to protective membrane.

Fig. 5 is the schematic cross sectional view of structure of the electrical condenser of second embodiment of the invention.In Fig. 5, to reference symbol and the omission explanation identical with Fig. 4 with the corresponding part mark of each several part shown in Figure 4.

This electrical condenser 31 is exactly so-called electric double layer capacitor, possess complex body 40, this complex body 40 comprises substrate (matrix) 32 that becomes current collector and the arrange body 34 that has the needle crystal 33 of polarizing electrodes same modality and substrate 32 common composition electrical condensers 31 with needle crystal 23 (with reference to figure 4).Needle crystal 33 possesses: with the first needle crystal 33A of the first needle crystal 23A homomorphosis, and and the second needle crystal 33B of the second needle crystal 23B homomorphosis, the surface of substrate 32 is covered fully by needle crystal 33 (first and second needle crystal 33A, 33B) in fact.

With the front end of the first needle crystal 33A separate appropriate intervals, form substrate 36, with substrate 32 arranged opposite as another polarizing electrode of collector electrode.Substrate 36 is by constituting with substrate 32 identical materials.

Space between arrange body 34 and the substrate 36 (comprising space between the first adjacent needle crystal 33A and the front end of the first needle crystal 33A and the space between the substrate 36) is filled up with electrolyte solution 35.Because the surface of substrate 32 is covered fully by needle crystal 33 in fact, has reduced the contact area of electrolyte solution 35 and substrate 32 thus.

Near interface at substrate 32,36 and electrolyte solution 35 forms electrical double layer to this electrical condenser 31 by apply voltage between a pair of substrate 32,36, thus, can store electric charge.

By using needle crystal 33 to be used as a polarizing electrode, make the needle crystal 33 of formation electrical double layer and the interfacial area of electrolyte solution 35 become big, thereby make the static capacity quantitative change of electrical condenser 31 big.Preferably, thus, can increase the reserves of electric charge at the mesoscale pore that forms between the first adjacent needle crystal 33A about wide 2nm～50nm.In addition, by reducing the contact area of electrolyte solution 35 and substrate 32, can not produce the leakage current that causes because of the supporting salt in the ionogen.That is, this electrical condenser 31 can reduce leakage current.

In addition, in existing electric double layer capacitor, adopt the gac of the aggregate form of particulate usually, but under influence of grain boundary etc., increased resistance as polarizing electrode.On the other hand, with regard to this electrical condenser 31,, promptly used most of crystal as monocrystalline owing to used needle crystal 33 as polarizing electrode, thus the influence of grain boundary almost do not had, thereby the electroconductibility height of polarizing electrode (needle crystal 33).The specific conductivity of needle crystal 33 can be by controlled doping dosage and controlled.

Also can extend to substrate 32 sides with the needle crystal that needle crystal 33 is same from substrate 36.In this case, can be so that from the needle crystal of substrate 36 growth and the mode arranged opposite that is not in contact with one another from the needle crystal 33 of substrate 32 growths.Thus,, also can increase the interfacial area of electrolyte solution 35 and polarizing electrode (needle crystal that begins to extend from substrate 36), can improve the electrostatic capacitance of electrical condenser even in substrate 36 sides.

Below, the manufacture method of complex body 10,20,30,40 is described. Complex body 10,20,30,40 can obtain by following method, promptly comprises by use to be selected from X ¹OH (in the formula, X ¹Any element of expression Na, K and Cs), X ² ₂CO ₃(in the formula, X ²Any element of expression H, Na, K and Cs) and NH ₃In at least a alkali and pH value apply method at the electroless plating of the plating solution more than 13 (hereinafter referred to as " plating solution of regulation "), can on transparency electrode 2, memory node 22 or substrate 32, make needle crystal 3,23,33 growths as matrix.

In this case, the growth of needle crystal 3,23,33 is made catalyzer with the material that the surface has hydroxy.

The substrate of the growth of needle crystal 3,23,33 is a plurality of crystal grain, satisfies by crystal orientation crystal grain at random to constitute and surface is wetting ability and is amorphous all prerequisites.At crystal grain and intergranule, also can there be amorphous matrix.Surface portion at matrix satisfies under the situation of these all prerequisites, can make needle crystal 3,23,33 growths do substrate with the surface portion of this matrix.

Carrying out before electroless plating applies,,, for example also can dispose by the particle that constitutes with tiny area 7,27 identical materials as the substrate particle that satisfies above-mentioned all prerequisites on the surface of matrix.In this case, in carrying out the deposited operation of electroless plating, make needle crystal 3,23,33 growths as nuclear (seed crystal) with above-mentioned particle.Therefore, in this case, can utilize the Particle Density that is disposed to come the density of arrange body 4,24,34 of the needle crystal 3,23,33 of control growing.

Do not dispose such particle on the surface of matrix and carry out under the situation that electroless plating applies, must make matrix self is the material (no matter being the material that contains the material of OH base in the structural formula or form the OH base at contact water isochronous graph face) that the surface has hydroxy.On the other hand, carry out after above-mentioned particle is disposed at matrix surface under the deposited situation of electroless plating, above-mentioned particle is so long as surperficial material with hydroxy gets final product again, and matrix also can not be the material that the surface has hydroxy.

Utilize such manufacture method, can be formed with the complex body 10,20,30,40 of needle crystal 3,23,33 with the inaccessible high-density manufacturing of prior art.According to the take a picture density (i.e. the density of the first needle crystal 3A, 23A, 33A) of the needle crystal 3,23,33 second area R2, the R22 that is measured of the scanning electron microscope of taking from the front of the first needle crystal 3A, 23A, 33A, for example the shadow area of each 1 μ m * 1 μ m reaches more than 1000.

Utilize the electroless plating coating method, even have the arrange body 2,24,34 that also can form uniform needle crystal 3,23,33 on the matrix of complex surfaces shape, and, even having electroconductibility, matrix can not form arrange body 4,24,34 yet.Therefore, compare with metallide and can use various matrixes, so being of wide application of this manufacture method.

In addition, utilizing electroless plating to apply the formation temperature that forms needle crystal 3,23,33 is 60 ℃～100 ℃, preferred 70 ℃～90 ℃, needn't must at high temperature keep matrix as chemical vapor-phase growing method and pulse laser method of piling.Therefore, can use as matrix as plastics and so on because of at high temperature reacting out of use material.

In addition, according to this manufacture method, needle crystal 3,23,33 is grown to various directions from starting point (comprise in this manufacture method under the situation of the operation that above-mentioned particle is disposed at matrix surface, this particle the becomes starting point) beginning on the matrix surface.This with for example in the manufacture method of the needle crystal of chemical vapor-phase growing method (for example with reference to above-mentioned non-patent literature 1) and electrocrystallization method prior aries such as (for example with reference to above-mentioned non-patent literatures 2) most of needle crystal be notable attribute with respect to matrix surface relatively along vertical direction growth phase almost.

If a plurality of starting points of needle crystal growth are positioned at position away from each other on matrix surface, then matrix surface is from almost exposing perpendicular to the needle crystal of matrix surface growth.On the other hand, according to manufacture method of the present invention, from the exposed division of the matrix surface that almost exposes perpendicular to the needle crystal (being equivalent to the first needle crystal 3A, 23A, 33A substantially) of (angle that forms with matrix surface within the limits prescribed) matrix surface growth, covered fully by needle crystal (being equivalent to the second needle crystal 3B, 23B, 33B substantially) in fact in the direction growth that departs from direction perpendicular to matrix surface.

That is, utilize manufacture method of the present invention,, can make the complex body 10,20,30,40 of the opposition side that can isolate matrix side and matrix well with respect to arrange body 4,24,34.And needn't use complementary isolator for this isolation.

The direction of needle crystal 3,23,33 growths also depends on crystal orientation or crystallinity as the starting point part of needle crystal 3,23,33 growths.For example, have at matrix under the situation of hydroxy, though also can be with matrix as the growth starting point, under the situation of the crystal orientation unanimity of matrix, the crystal orientation unanimity when causing needle crystal 3,23,33 growths sometimes.For example, with the zinc-oxide film that utilizes sputtering method to form (with reference to above-mentioned non-patent literature 5) under the situation of the karyomorphism arrange body that becomes zinc oxide needle crystal, because in each crystal orientation unanimity of zinc-oxide film, thus easily make zinc oxide needle crystal towards unanimity.

Therefore, the part as the starting point of needle crystal 3,23,33 growth preferably has the crystallinity of demonstration and crystal orientation at random, does not perhaps show crystallinity.For example, by the particle (surface has the material of hydroxy) that constitutes with tiny area 7,27 identical materials for having the material that shows crystallinity and crystal orientation at random or not demonstrating under the situation of crystalline material, the crystal orientation of the needle crystal 3,23,33 that begins to grow from the particle as nuclear can be made as at random.But,, also not necessarily make the crystal orientation of certain particle consistent with the crystal orientation of the needle crystal 3,23,33 that begins to grow from this particle even have crystallinity as the particle of nuclear.

In this case, needle crystal 3,23,33 is along at random directions growth, the combination in order to become spatial interference each other, and its result can cover matrix in fact at first area R1, the R21 of the arrange body 4,24,34 of needle crystal 3,23,33.

When particle is disposed at the surface of matrix, for example if will be dispersed with hydrosol dip coating, spraying and applying, the spin coated of the particle (particulate) of the starting point of growing or instil on matrix the then common crystal orientation unanimity that can not make this particle as needle crystal 3,23,33.That is, utilize these methods, can on matrix, dispose crystal orientation particle at random.

In addition, in manufacture method of the present invention, begin needle crystal 3,23,33 from any starting point to the growth of the direction that departs from from direction perpendicular to matrix surface, be subjected to the needle crystal 3,23,33 that begins to grow from other adjacent starting point obstruction and can not be very long vegetatively, on the other hand, the needle crystal 3,23,33 of on direction almost, growing perpendicular to matrix surface can not be subjected to other the obstruction of needle crystal 3,23,33 and very long vegetatively.Thus, as a whole, the length direction of needle crystal 3,23,33 towards unanimity.Therefore, for example under the length direction of needle crystal 3,23,33 situation consistent with the c axle, the arrange body 4,24,34 that just becomes needle crystal 3,23,33 carries out c axle orientation.

In order to cover matrix, the growth starting point is existed with certain fine and close degree with needle crystal 3,23,33 essence.Below, the starting point of establishing growth is particle (particulate).

Under the situation of the arrange body 4,24,34 that forms the needle crystal 3,23,33 that constitutes by zinc oxide, for example, the ethanolic soln that has dissolved zinc acetate dihydrate (precursor of zinc oxide) can be spin-coated on the matrix surface, and this matrix heated (burning till), form particle as the growth starting point (particulate that constitutes by zinc oxide) by the thermolysis zinc acetate.Utilize Heating temperature, can obtain the particulate that constitutes by amorphousness zinc oxide, and/or the particulate that constitutes by crystalloid and crystal orientation zinc oxide at random.In addition, between the particulate that constitutes by crystalloid and crystal orientation zinc oxide at random, also can produce the state that has the amorphous matrix that constitutes by zinc oxide.

In this case, be made as about 0.001 mol～about 0.1 mol by the concentration with the zinc acetate dihydrate in the ethanolic soln, the degree that can cover matrix with needle crystal 3,23,33 essence that can grow makes the particulate that is made of zinc oxide have (for example existing with the form that constitutes film) densely.

Under the low excessively situation of the concentration of the zinc acetate dihydrate in ethanolic soln, will make the density of the particulate that is formed at matrix surface low excessively, needle crystal 3,23,33 can not essence cover matrix.But, implement number of times by increasing spin coating and pyrolysated, even above-mentioned concentration below 0.001 mol, also can make the particulate as the growth starting point of needle crystal 3,23,33 exist densely with the degree that needle crystal 3,23,33 covers matrix densely.

But in this case, the particulate localized agglomeration forms needle crystal 3,23,33 on the particulate of cohesion, thereby can not improve the fastening strength of matrix and needle crystal 3,23,33 (arrange body 4,24,34).Therefore, because peeling off etc. of needle crystal 3,23,33 makes matrix expose sometimes.Therefore, the spin coating number of times is preferred 1～5 time.

On the other hand, under the situation of concentration, can on the particulate of cohesion, form needle crystal 3,23,33 greater than 0.1 mol.

At this, when the needle crystal 3,23,33 that is made of zinc oxide was grown, the particulate that is made of zinc oxide was surrounded by this needle crystal 3,23,33.Therefore, when needle crystal 3,23,33 begins to grow, even under needle crystal and situation that matrix does not directly contact, also can be before the growth ending of needle crystal 3,23,33, needle crystal 3,23,33 is directly contacted with matrix surface.And, in the moment of the growth ending of needle crystal 3,23,33,, then can improve the fastening strength of matrix and needle crystal 3,23,33 if make area that needle crystal 3,23,33 and matrix directly contact greatly to a certain degree.

As mentioned above, when on the particulate of cohesion, forming needle crystal 3,23,33, the moment at the growth ending of needle crystal 3,23,33 perhaps makes the contact area of matrix and arrange body 4,24,34 diminish, and matrix is not contacted with arrange body 4,24,34.Consequently, reduce the fastening strength of matrix and needle crystal 3,23,33, thereby produced peeling off of needle crystal 3,23,33.Therefore, cause matrix to expose, can not substantially cover matrix with the arrange body 4,24,34 of needle crystal 3,23,33.

Heating temperature after the spin coating just can obtain the particulate that is made of zinc oxide if 180 ℃～500 ℃.In this temperature range, when heating, need to prolong heat-up time for the particulate that obtains constituting by zinc oxide with low temperature.

If the salt (precursor) that uses decomposes, obtain the particle that constitutes by the purpose material, then can add water decomposition, dehydrating condensation, plasma irradiation etc. to substitute thermolysis (comprising microwave heating).

Also can utilize repeatedly electroless plating to apply, needle crystal 3,23,33 is grown repeatedly.In this case, make in needn't applying at the electroless plating of all round trips by needle crystal 3,23,33 growths that constitute with a kind of material (composition), make needle crystal 3,23,33 growths that constitute by different material (composition) in also can applying at electroless plating each time.For example, can use the plating solution that contains the aluminium supply source, by repeatedly deposited needle crystal 3,23,33 growths that make the aluminium that mixed of electroless plating.In this case, after also can making electroless plating apply round trip to lean on more, the concentration of the aluminium supply source in the plating solution is low more, and the aluminium doping of needle crystal 3,23,33 is just low more.

The arrange body 4,24,34 of Xing Chenging is applicable to photo-electric conversion element like this.Reason is, by reducing the aluminium doping in second area R2 side needle crystal 3, reduces reverse saturation current density, in addition, by being increased in the aluminium doping of first area R1 side needle crystal 3, has improved resistance value.

In addition, utilizing growth repeatedly to form under the situation of needle crystal 3,23,33, the electroless plating that needn't use the plating solution of afore mentioned rules to carry out all round trips applies, as long as substantially by after needle crystal 3,23,33 (arrange body 4,24,34) the covering matrix, just can utilize outside the plating solution that has used afore mentioned rules plating solution (for example, the plating solution that does not contain the alkali of afore mentioned rules such as NaOH) electroless plating applies, and carries out the growth of needle crystal 3,23,33 thereafter.

For example, can be nuclear with the arrange body 4,24,34 of the complex body 10,20,30,40 that obtains with the present invention, utilization has used the electroless plating of the plating solution (not satisfying the prerequisite of the plating solution of regulation) that contains vulkacit H to apply method, strike, vapor growth method etc., can also make needle crystal 3,23,33 continued growths.Do like this, can form the long-width ratio height and use first area R1, R21 to cover the complex body 10,20,30,40 of matrix in fact.

In addition, be included on the matrix surface in this manufacture method under the situation of operation of the above-mentioned particle of configuration, behind the growth ending of needle crystal 3,23,33, the part of above-mentioned particle is as tiny area 7,27 and residual sometimes.In this case, can utilize tiny area 7,27 to improve the tightness of needle crystal 3,23,33 and matrix.Utilize electroless plating to apply the above-mentioned Particle Density that is configured in before on the matrix surface, can control the fastening strength of matrix and arrange body 4,24,34.After arrange body 4,24,34 forms,, can also reduce the fastening strength of matrix and arrange body 4,24,34 if plan to peel off arrange body 4,24,34 from matrix.

In manufacture method of the present invention, for example can carry out the time that electroless plating applies by control, control the length and the density of needle crystal 3,23,33.Thus, be applied under the situation of electrical condenser, can be easy to control its electrostatic capacitance at the complex body 10,20,30,40 that will obtain.

Though embodiments of the present invention as mentioned above, the present invention also can otherwise implement.For example, with regard to above-mentioned embodiment, the first needle crystal 3A, 23A form almost 90 ° angle with the surface of matrix (transparency electrode 2, memory node 22, substrate 32) and extend, but also can be at wideer angular range, for example be that 45 °～90 ° mode is extended with the angle that forms with matrix.Complex body with this first needle crystal for example can make the needle crystal growth by reducing as the Particle Density that is disposed at the nuclear on the matrix.

In addition, in scope as claimed in claim, can carry out various changes.

Embodiment

The following describes embodiment,, do not mean that also the present invention only is confined to embodiment though be described more specifically the present invention.

＜embodiment 1 〉

Made complex body in the present embodiment, this complex body possesses matrix and utilizes electroless plating to apply the oxide needle-like crystalline arrange body that forms on this matrix surface.The following describes present embodiment.

Prepare glass substrate, with this as matrix.Go up coating zinc nitrate aqueous solution (0.001 mol) on a surface (hereinafter referred to as " surface ") of matrix, by making this matrix rotation with 1500 rev/mins, this zinc nitrate aqueous solution is spin-coated on the matrix surface, at room temperature dry again this matrix, afterwards, under 260 ℃, carry out sintering, thereby obtain the matrix that surface configuration has zinc oxide fine particles (substrate of needle crystal growth).

Then, the matrix that disposes this particulate is put into the reaction vessel (pressure vessel) that Te Fulong (registered trademark) makes, be immersed in electroless plating and apply in the liquid.Apply in the liquid at employed electroless plating, solvent is a water, and solute is zinc nitrate hexahydrate and sodium hydroxide (NaOH).The hexahydrated concentration of nitric acid in the plating solution is 0.06 mol, and the concentration sodium hydroxide in the plating solution is 0.75 mol.The pH value of plating solution is 13.2.In this reaction vessel, plating solution is carried out forming the arrange body of the needle crystal that is made of zinc oxide at matrix surface in the process of heating in 85 ℃, 1 hour.

And as shown in Figure 6, when being immersed in matrix 124 in the plating solution 123 (comprising heat-processed), so that the posture of the bottom surface (downwards) of the surface of matrix 124 (making the face of a side of needle crystal growth) orientating reaction container 121,122 is used supporting mass 125 support bases 124.Thus, can reduce as shown in Figure 2 the 3rd needle crystal 3C, obtain the good arrange body of light transmission like that from the front end of the needle crystal that begins direct growth from matrix density to the needle crystal of a plurality of direction of principal axis growths.

In addition, applying without electroless plating but adopt under the situation of manufacture method of metallide, matrix is limited in the material with electroconductibility.Therefore, on glass pole plate, be difficult to form the arrange body of needle crystal as present embodiment.In addition, even under the situation of the arrange body that forms needle crystal on the matrix with complicated shapes such as design, when being metallide, though be difficult to carry out the control that electric field is concentrated, but if electroless plating applies, then, also can form uniform arrange body at an easy rate in the simple situation of manufacturing installation.In addition, even under the situation of the arrange body that forms needle crystal on the large-scale matrix, with regard to electroless plating applies, because in fact as long as solvent, catalyzer and temperature are same conditions, then the speed of growth of needle crystal nearly all is identical in all places of matrix, so, be easy to obtain the arrange body of uniform thickness.

Fig. 7 A represents that the scanning electron microscope photograph of the arrange body that obtains from present embodiment is (from the direction of overlooking at vertical matrix (on) and direction (descend) shooting of parallel matrix).The brilliant about 80nm in footpath of this needle crystal, the length of this needle crystal is about 1.4 μ m.The density of the needle crystal of this moment is about 1800 of every square micron.

Fig. 7 B peels off this arrange body from matrix, the electron scanning micrograph of this arrange body that photographs from a side that has matrix to exist.In this arrange body, compare with the opposition side (second area is with reference to figure 7A) of matrix, (first area is with reference to figure 7B) has needle crystal densely in the matrix side.

In order to contrast, except being 0.005 mol and the pH value of plating solution is made as 11.6, use the condition same with the foregoing description by establishing concentration sodium hydroxide in the plating solution, there is the matrix of zinc oxide fine particles to be immersed in the plating solution surface configuration.On the surface of the matrix that obtains, do not observe needle crystal, the local particle that has adhered to zinc oxide on the matrix.The median size of zinc oxide particle is about 25nm.

In addition, in order to compare, plating solution is made the solution (hereinafter referred to as " plating solution of comparative example ") of the concentration that contains zinc nitrate hexahydrate 0.06 mol, vulkacit H 0.75 mol, in addition use condition same as the previously described embodiments, have the matrix of zinc oxide fine particles to be impregnated in the plating solution surface configuration.The pH value of the plating solution of comparative example is determined as about 7.0 with the pH test paper.

Observe the surface of resulting matrix with scanning electron microscope from the direction of vertical matrix, find that matrix exposes from the arrange body of needle crystal.

Matrix is immersed in the length of the needle crystal of plating solution after 1 hour, under the situation of the plating solution that has used the foregoing description (contain sodium hydroxide and pH value be 13.2 plating solution) is 1.4 μ m, relative with it, used under the situation of plating solution of above-mentioned comparative example to about 200nm.Can find that compare with the situation of having used the foregoing description, under the situation of the plating solution that has used above-mentioned comparative example, the speed of growth of needle crystal is slow.

Embodiment 2

Present embodiment utilizes electroless plating to apply the arrange body that forms the needle crystal that is made of zinc oxide on matrix surface, has made the dye-sensitized solar cell that uses as the n N-type semiconductorN with this.The following describes present embodiment.

(electrical sheet resistance is the SnO of the doped F of 12 Ω/ to get a lip-deep nesa coating that is formed at glass substrate in advance ready ₂), with this as matrix.As the surface, on this surface, apply zinc nitrate aqueous solution (0.001 mol) with the face that is formed with nesa coating (face) of this glass substrate with electroconductibility.And, by making glass substrate, this zinc nitrate aqueous solution is spin-coated on the glass substrate with the rotation of 1500 rev/mins rotating speed, at room temperature after the drying,, obtained the matrix that surface configuration has zinc oxide fine particles at 260 ℃ of following sintering.

The matrix that disposes this particulate is put into reaction vessel, be immersed in electroless plating and apply in the liquid.In employed electroless plating applied liquid, solvent was a water, contained zinc nitrate hexahydrate and sodium hydroxide as solute with the concentration of 0.06 mol and 0.75 mol respectively in the aqueous solution.The pH value of plating solution is 13.5.The pressure vessel that has used Te Fulong (registered trademark) to make as reaction vessel.And matrix is the same with embodiment 1, is so that the surface of matrix is immersed in the plating solution towards the posture of the bottom surface of reaction vessel.

In this reaction vessel, plating solution is carried out having formed the arrange body of the needle crystal that is made of zinc oxide at matrix surface in the process of heating in 85 ℃, 1 hour.The electron scanning micrograph (taking from the direction of vertically overlooking matrix) that has repeated the arrange body after 3 these electroless platings apply is shown in Fig. 8 A.The brilliant about 80nm in footpath of this needle crystal, the length of this needle crystal is about 5.2 μ m.The density of the needle crystal of this moment is about 1700 of every square micron.

Fig. 8 B is that expression is peeled off this arrange body from matrix, the figure of the X-ray diffraction figure that the opposition side (second area) of the side (first area) that disposes matrix of this arrange body and matrix is measured.

Obtained the crest of (002), (101) and (100) in the first area.On the other hand, obtained the crest of (002) and (101), but do not obtained the crest of (100) at second area.In addition, compare with the first area, the crest of (101) is minimum at second area.The orientation that is the needle crystal in the first area is lower than the orientation of the needle crystal in the second area.

Then, the ethanolic soln that has dissolved the Ru complex compound is remained on 40 ℃, arrange body is immersed in this solution 15 minutes, make the Ru pigment thus attached to the arrange body surface.As the counter electrode of nesa coating (matrix of arrange body), used that (electrical sheet resistance is the SnO of the doped F of 12 Ω/ with the nesa coating of platinum 1000 dust evaporations on a surface that is formed at glass substrate ₂) on structure.By between counter electrode and matrix, inserting pad counter electrode and matrix are formed on the state that forms short space between counter electrode and the matrix, inject electrolyte solution at this short space.As electrolyte solution, use be the solution that in acetonitrile, has dissolved lithium iodide and iodine.Like this, just obtained dye-sensitized solar cell.

This dye-sensitized solar cell is compared with the dye-sensitized solar cell that uses zinc oxide fine particles to substitute the needle crystal that is made of zinc oxide, and with regard to identical amount of pigment, the magnitude of current has improved 25%.

Embodiment 3

Present embodiment utilizes electroless plating to apply and forms arrange body, and wherein this arrange body possesses the aggregate of the needle crystal that is made of the zinc oxide to a plurality of direction of principal axis growths, has made with this dye-sensitized solar cell as the n N-type semiconductorN.The following describes present embodiment.

(electrical sheet resistance is the SnO of the doped F of 12 Ω/ to get a lip-deep nesa coating that is formed at glass substrate in advance ready ₂), with this as matrix.As the surface, on this surface, apply zinc nitrate aqueous solution (0.001 mol) with the face that is formed with nesa coating (face) of this glass substrate with electroconductibility.And, by making glass substrate, this zinc nitrate aqueous solution is spin-coated on the glass substrate with the rotation of 1500 rev/mins rotating speed, at room temperature after the drying,, obtained the matrix that surface configuration has zinc oxide fine particles at 260 ℃ of following sintering.

The matrix that disposes this particulate is put into reaction vessel and be immersed in the deposited liquid of electroless plating.In employed electroless plating applied liquid, solvent was a water, and contained zinc nitrate hexahydrate and sodium hydroxide as solute with the concentration of 0.04 mol and 0.75 mol respectively in the aqueous solution.The pH value of plating solution is 13.4.The pressure vessel that has used Te Fulong (registered trademark) to make as reaction vessel.And matrix is the same with embodiment 1, is so that the surface of matrix is immersed in the electrolytic solution towards the posture of the bottom surface of reaction vessel.

In this reaction vessel, plating solution is carried out having formed the arrange body of the needle crystal that is made of zinc oxide at matrix surface in the process of heating in 85 ℃, 1 hour.The electron scanning micrograph that has repeated the arrange body (first sample) after 3 these electroless platings apply as shown in Figure 9.The average about 65nm in brilliant footpath of this needle crystal, the length of this needle crystal is about 2.1 μ m.The density of the needle crystal of this moment is about 1800 of every square micron.Have the aggregate of the needle crystal (outside needle crystal) that constitutes by zinc oxide on the arrange body along a plurality of axial growth scatteredly.The density of this aggregate is about 0.03 of per 100 square microns.

Then, modulation is formed with the arrange body (second sample) of outside needle-like crystalline aggregate with higher density.At first, (electrical sheet resistance is the SnO of the doped F of 12 Ω/ to get a lip-deep nesa coating that is formed at glass substrate ready ₂), with this as matrix.As the surface, on this surface, apply zinc nitrate aqueous solution (0.001 mol) with the face that is formed with nesa coating (face) of this glass substrate with electroconductibility.And, by making glass substrate, this zinc nitrate aqueous solution is spin-coated on the glass substrate with the rotation of 1500 rev/mins rotating speed, at room temperature after the drying,, obtain the matrix that surface configuration has zinc oxide fine particles at 260 ℃ of following sintering.

The matrix that disposes this particulate is put into reaction vessel and be immersed in the deposited liquid of electroless plating.In employed electroless plating applied liquid, solvent was a water, contained zinc nitrate hexahydrate and sodium hydroxide as solute with the concentration of 0.04 mol and 0.75 mol respectively in the aqueous solution.The pH value of plating solution is 13.5.The pressure vessel that has used Te Fulong (registered trademark) to make as reaction vessel.And matrix is so that matrix surface is immersed in the plating solution towards the posture of the opposition side of the bottom surface of reaction vessel.So, can increase along the density of the aggregate of the needle crystal of a plurality of axial growth, thereby obtain the good arrange body of scattering of light.

In this reaction vessel, plating solution is carried out having formed the arrange body of the needle crystal that is made of zinc oxide at matrix surface in the process of heating in 85 ℃, 1 hour.The electron scanning micrograph that has repeated the arrange body after 3 these electroless platings apply as shown in figure 10.About the average about 65nm in brilliant footpath of this needle crystal, the length of this needle crystal is about 3.5 μ m.On this arrange body (in the needle crystal of direct growth on the substrate), form with the density higher (on almost whole of arrange body) than first sample along the aggregate of the needle crystal (outside needle crystal) of a plurality of axial growth.

The density of the needle crystal of direct growth is about 1800 of every square micron on the matrix at this moment.In addition, the density of outside needle-like crystalline aggregate is about 9 of per 100 square microns.

Then, pigment is adsorbed on these two arrange bodies (first and second sample).At first, remain on 40 ℃, arrange body is immersed in this solution 15 minutes, the Ru pigment is adsorbed on the arrange body surface by the ethanolic soln that will dissolve the Ru complex compound.As the counter electrode of nesa coating (matrix of arrange body), (electrical sheet resistance is the SnO of the doped F of 12 Ω/ with the nesa coating of platinum 1000 dust evaporations on a surface that is formed at glass substrate in use ₂) on structure.By between it, inserting pad this counter electrode and matrix are made the state that forms short space between counter electrode and matrix, inject electrolyte solution at this short space.What electrolyte solution used is the solution that has dissolved lithium iodide and iodine in acetonitrile.Like this, just obtained having used respectively the dye-sensitized solar cell of first and second sample.

Used the dye-sensitized solar cell of second sample, compared with the dye-sensitized solar cell that has used first sample, the magnitude of current of per unit amount of pigment improves 30%.In addition, second sample is compared with first sample, and the pigment adsorptive capacity is 2 times, and the turnover ratio that has used the dye-sensitized solar cell of second sample also is 2 times.

Embodiment 4

The example of making organic and inorganic blended solid solar cell is described.In the present embodiment, apply, form the arrange body of the needle crystal that the zinc oxide by the n N-type semiconductorN constitutes,, used poly-three hexyl thiophenes as p type charge transport layer and photoreceptor at matrix surface by electroless plating.

(electrical sheet resistance is the SnO of the doped F of 12 Ω/ to get a lip-deep nesa coating that is formed at glass substrate in advance ready ₂), with this as matrix.As the surface, on this surface, apply zinc nitrate aqueous solution (0.001 mol) with the face that is formed with nesa coating (face) of this glass substrate with electroconductibility.And, by making glass substrate, this zinc nitrate aqueous solution is spin-coated on the glass substrate with the rotation of 1500 rev/mins rotating speed, at room temperature after the drying,, obtain the matrix that surface configuration has zinc oxide fine particles at 260 ℃ of following sintering.

The matrix that disposes this particulate is put into reaction vessel and be immersed in the deposited liquid of electroless plating.In employed electroless plating applied liquid, solvent was a water, contained zinc nitrate hexahydrate and sodium hydroxide as solute with the concentration of 0.06 mol and 0.75 mol respectively in the aqueous solution.The pH value of plating solution is 13.4.The pressure vessel that has used Te Fulong (registered trademark) to make as reaction vessel.

In this reaction vessel, plating solution is carried out having formed the arrange body of the needle crystal that is made of zinc oxide at matrix surface in the process of heating in 85 ℃, 1 hour.Through confirming that with scanning electron microscope the brilliant footpath of this needle crystal is about 65nm on average, the length of this needle crystal is about 1.3 μ m.The density of the needle crystal of this moment is about 1700 of every square micron.

Matrix so that matrix surface be immersed in the plating solution towards the posture of the bottom surface of reaction vessel.

As the counter electrode of nesa coating (matrix of arrange body), used that (electrical sheet resistance is the SnO of the doped F of 12 Ω/ being formed at the nesa coating of glass substrate with golden 1000 dust evaporations ₂) on structure.Opposed by the arrange body and the above-mentioned counter electrode that make the needle crystal that constitutes by above-mentioned zinc oxide, and between it, insert pad, become the state that between arrange body and counter electrode, forms short space.Be infused in the solution that is dissolved with poly-three hexyl thiophenes in the chlorobenzene at this short space,, make this short space possess poly-three hexyl thiophenes by repeating 80 ℃ of exsiccant operations.

Under the situation of having used poly-three hexyl thiophenes that obtain by above-mentioned operation, possessed the arrange body that constitutes by zinc oxide, to compare with the situation that substitutes this arrange body with zinc oxide fine particles, photoelectric transformation efficiency has improved 50%.

Embodiment 5

Present embodiment is made matrix with plastics, applies the arrange body that has formed needle crystal at matrix surface by electroless plating, the following describes present embodiment.

Get ready in advance and be processed into flat polyvinyl alcohol, and with this as matrix.Then, according to following way modulation particulate oxide zinc.At first, in 40 milliliters methyl alcohol, add the zinc acetate dihydrate, be heated to 60 ℃ and make its dissolving, obtain first solution in the mode of the concentration of furnishing 0.01 mol.In addition, in 20 milliliters methyl alcohol, add sodium hydroxide, obtain second solution in the mode of the concentration of furnishing 0.03 mol.Then, second solution is heated to 60 ℃, is instilled into slowly in first solution while stir.The mixing solutions that obtains was kept 8 hours down at 60 ℃, afterwards, in this mixed solution, obtain the zinc oxide fine particles about median size 10nm.

Make after this mixing solutions cooling, in this mixing solutions, add methyl alcohol, make this mixed solution thorough mixing by stirring.Afterwards, carry out centrifugation, make the zinc oxide fine particles precipitation, cast out clear liquid with 3000 rev/mins rotating speeds.By repeat 5 times above-mentioned from adding methyl alcohol to the processing of casting out clear liquid, clean zinc oxide fine particles.

Make above-mentioned matrix rotation with 1500 rev/mins rotating speeds, make the zinc oxide fine particles that to obtain be distributed to the mixed solution that forms in the methyl alcohol once more thus and be spun on the above-mentioned matrix,, zinc oxide fine particles is configured on the matrix surface by using drying at room temperature.The matrix that disposes this zinc oxide fine particles is impregnated into electroless plating in reaction vessel apply in the liquid.In employed electroless plating applied liquid, solvent was a water, contained zinc nitrate hexahydrate and sodium hydroxide as solute with the concentration of 0.06 mol and 0.25 mol respectively in the aqueous solution.The pH value of plating solution is 13.1.The pressure vessel that has used Te Fulong (registered trademark) to make as reaction vessel.Matrix then so that the posture of the bottom surface of matrix surface orientating reaction container be immersed in the plating solution.

In this reaction vessel, plating solution is carried out having formed the arrange body of the needle crystal that is made of zinc oxide at matrix surface in the process of heating in 80 ℃, 1 hour.Through confirming that with scanning electron microscope about the average about 80nm in brilliant footpath of this needle crystal, the length of this needle crystal is about 0.6 μ m.The density of the needle crystal of this moment is about 1500 of every square micron.

In addition, with regard to the foregoing description 1～5, the hexahydrated concentration of zinc nitrate as the raw material of zinc oxide needle crystal, though be decided to be 0.04 mol or 0.06 mol, but, can be preferably make the needle crystal growth with the concentration of 0.3 mol～0.07 mol so long as 0.01 mol～2 mol just can obtain the arrange body of needle crystal.In addition, concentration sodium hydroxide be to be set at 0.75 mol or 0.25 mol with regard to the foregoing description 1～5, but so long as 0.1 mol～1 mol just can obtain the arrange body of needle crystal.

Embodiment 6

Present embodiment is to apply the arrange body of the zinc oxide needle crystal that covers matrix surface in fact by electroless plating, and so that the arrange body of the needle crystal that the mode that matrix exposes forms, be used separately as the embodiment of dye-sensitized solar cell to compare of n N-type semiconductorN.The following describes present embodiment.

Get ready in advance and on a surface, be formed with nesa coating (electrical sheet resistance is the SnO of the doped F of 12 Ω/ ₂) glass substrate.With the face that is formed with nesa coating (face) of this glass substrate with electroconductibility as the surface, coating zinc acetate ethanolic soln (0.03 mol) on this surface.Then,, this zinc acetate ethanolic soln is spin-coated on the glass substrate, at room temperature after the drying,, has obtained the matrix that the surface is formed with the film that is made of zinc oxide fine particles at 260 ℃ of following sintering by making glass substrate with the rotation of 1500 rev/mins rotating speed.The mean thickness of the film that obtains (using the nuclear power measurement microscope) is 7nm.

The matrix that will dispose this particulate (film) is put into reaction vessel and is immersed in electroless plating and applies liquid and carry out electroless plating and apply.Apply in the liquid at employed electroless plating, solvent is a water, and solute is zinc nitrate hexahydrate and sodium hydroxide.Zinc nitrate hexahydrate in the plating solution is that 0.06 concentration is 0.06 mol, and concentration sodium hydroxide is 0.75 mol in the plating solution.Reaction vessel has used the pressure vessel of polypropylene system.Matrix is then the same with embodiment 1, so that the posture of the bottom surface of matrix surface orientating reaction container is immersed in the plating solution.

In this reaction vessel, plating solution is carried out having formed the arrange body of the needle crystal that is made of zinc oxide at matrix surface in the process of heating in 80 ℃, 1 hour.Repeating 2 these electroless platings applies.

The average about 65nm in brilliant footpath of the needle crystal that obtains, the length of this needle crystal is about 3.2 μ m.The density of the needle crystal of this moment is about 1000 of every square micron.Thus, formed the arrange body of the zinc oxide needle crystal of fine and close (in fact) covering matrix.

As a comparison, made so that the arrange body of the needle crystal that the mode that the part of matrix is exposed forms.Get ready in advance and on a surface, be formed with nesa coating (electrical sheet resistance is the SnO of the doped F of 12 Ω/ ₂) glass substrate., on this surface, sprayed after the aqueous isopropanol that is dispersed with zinc oxide fine particles as the surface with the face that is formed with nesa coating (face) of this glass substrate with electroconductibility, at room temperature dry, be heated to 150 ℃.Repeat 3 this sprayings, drying and agglomerating operation, thereby on matrix surface, formed the film that constitutes by zinc oxide fine particles.The mean thickness of the film that obtains is 70nm.

The matrix that will dispose this particulate (film) is put into reaction vessel and is immersed in electroless plating and applies liquid and carry out electroless plating and apply.Apply in the liquid at employed electroless plating, solvent is a water, and solute is zinc nitrate hexahydrate and sodium hydroxide.Nitric acid zinc concentration in the plating solution is 0.06 mol, and concentration sodium hydroxide is 0.75 mol in the plating solution.The pressure vessel that reaction vessel has used polypropylene to make.Matrix is then the same with embodiment 1, so that the posture of the bottom surface of matrix surface orientating reaction container is immersed in the plating solution.

In this reaction vessel, plating solution is carried out having formed the arrange body of the needle crystal that is made of zinc oxide at matrix surface in the process of heating in 80 ℃, 1 hour.Repeat 2 these electroless platings and apply, the average about 80nm in brilliant footpath of the needle crystal that obtains, the length of this needle crystal is about 3.0 μ m.The density of the needle crystal of this moment is about 900 of every square micron.Thus, formed the arrange body of the zinc oxide needle crystal of fine and close covering matrix.

Operation below implementing (operation of absorption Ru pigment) is peeled off the part of this arrange body, the part that the generation matrix exposes from arrange body from matrix before.

Then, the ethanolic soln that has dissolved the Ru complex compound is remained on 40 ℃, be immersed in this solution 15 minutes respectively, make arrange body surface adsorption Ru pigment by the matrix that will be formed with above-mentioned two kinds of arrange bodies.Make the adsorptive capacity of Ru pigment of each arrange body identical.

Then, as the counter electrode of nesa coating (matrix of arrange body), get in advance that (electrical sheet resistance is the SnO of the doped F of 12 Ω/ being formed at another surperficial nesa coating of glass substrate with platinum 1000 dust evaporations ready ₂) on structure.By between the matrix of this counter electrode and arrange body (surface adsorption the arrange body of Ru pigment), inserting pad, make the state that is formed with short space between counter electrode and the arrange body, in this short space, inject electrolyte solution.As electrolyte solution, use the solution that in acetonitrile, has dissolved lithium iodide and iodine.Like this, just obtained dye-sensitized solar cell.

Figure 11 is illustrated in electric current (current density)--the voltage characteristic of measuring the dye-sensitized solar cell that obtains under the condition of simulated solar rayed.Curve b1 has represented to use the characteristic of dye-sensitized solar cell of the arrange body of the zinc oxide needle crystal that the part that makes matrix exposes, and curve b2 has represented to use essence to cover the characteristic of dye-sensitized solar cell of arrange body of the zinc oxide needle crystal of matrix.

Used essence to cover the dye-sensitized solar cell of arrange body of the zinc oxide needle crystal of matrix, compare with the dye-sensitized solar cell of the arrange body of the zinc oxide needle crystal of having used the part that makes matrix to expose, efficiency of conversion has improved about 2.5 times.

Embodiment 7

Present embodiment has been made the complex body (hereinafter referred to as " matrix is capped the type complex body ") that is covered matrix in fact by the arrange body of needle crystal fully, and the complex body (hereinafter referred to as " matrix exposed type complex body ") that exposes from the arrange body of needle crystal of matrix, and each complex body has been measured the I-E characteristic of arrange body.

The manufacturing conditions that matrix is capped the type complex body is as follows.

(electrical sheet resistance is the SnO of the doped F of 12 Ω/ to get a lip-deep nesa coating that is formed at glass substrate in advance ready ₂), and with this as matrix.With the face that is formed with nesa coating (face) of this glass substrate with electroconductibility as the surface, coating zinc acetate ethanolic soln (0.001 mol) on this surface.Then,, this zinc acetate ethanolic soln is spin-coated on the glass substrate, at room temperature after the drying,, has obtained the matrix that surface configuration has zinc oxide fine particles at 260 ℃ of following sintering by making glass substrate with the rotation of 1500 rev/mins rotating speed.

Then, the matrix that disposes this particulate is put into the reaction vessel (pressure vessel) that Te Fulong (registered trademark) makes, be immersed in electroless plating and apply in the liquid.Apply in the liquid at employed electroless plating, solvent is a water, and solute is zinc nitrate hexahydrate and sodium hydroxide.The hexahydrated concentration of zinc nitrate in the plating solution is 0.04 mol, and the concentration sodium hydroxide in the plating solution is 0.75 mol.The pH value of plating solution is 13.6.In this reaction vessel, plating solution is carried out in the process of heating in 80 ℃, 1 hour, matrix surface formed constitute by zinc oxide, cover the arrange body of the needle crystal of matrix surface in fact.

The manufacturing conditions of matrix exposed type complex body is as follows.

(electrical sheet resistance is the SnO of the doped F of 12 Ω/ to get a lip-deep nesa coating that is formed at glass substrate in advance ready ₂), and with this as matrix.As the surface, on this surface, applied zinc acetate ethanolic soln (0.001 mol) with the face that is formed with nesa coating (face) of this glass substrate with electroconductibility.Then,, this zinc acetate ethanolic soln is spin-coated on the glass substrate, at room temperature after the drying,, has obtained the matrix that surface configuration has zinc oxide fine particles at 260 ℃ of following sintering by making glass substrate with the rotation of 1500 rev/mins rotating speed.

Then, the matrix that disposes this particulate is put into the reaction vessel (pressure vessel) that Te Fulong (registered trademark) makes, be immersed in electroless plating and apply in the liquid.Apply in the liquid at employed electroless plating, solvent is a water, and solute is zinc nitrate hexahydrate and vulkacit H.The hexahydrated concentration of nitric acid in the plating solution is 0.04 mol, and the concentration of the vulkacit H in the plating solution is 0.06 mol.The pH value of plating solution is 8.In this reaction vessel, plating solution is carried out having formed the arrange body of the needle crystal that is made of zinc oxide at matrix surface in the process of heating in 80 ℃, 1 hour.Expose matrix surface from the arrange body of needle crystal.

The needle crystal (arrange body) that matrix is capped type complex body and matrix exposed type complex body all is semi-conductor.Confirm by section S EM photo whether arrange body covers matrix.

Figure 12 represents that matrix is capped the I-E characteristic of type complex body and matrix exposed type complex body.When measuring, on arrange body by with the mode gold evaporation of the opposition side (second area) that covers matrix to form gold electrode.Electric current as shown in figure 12--voltage characteristic is to obtain by applying voltage and measure the electric current that flows through between two electrodes between the transparency electrode of gold electrode and composition matrix in the darkroom.

As can be seen, the ohm property shown in curve a1 that complex body showed of matrix exposed type shows short circuit between two electrodes.On the other hand, as can be seen, matrix is capped the I-E characteristic of non-linear (non-ohm) shown in curve b1 that complex body showed of type, and showing between two electrodes does not have short circuit.

Embodiment 8

Use the nuclear of three kinds of needle crystal growths to carry out the formation of arrange body.No matter any situation all forms needle crystal by electrodeless plating on matrix surface.In the present embodiment, (electrical sheet resistance is the SnO of the doped F of 12 Ω/ to get a lip-deep nesa coating that is formed at glass substrate in advance ready ₂), and with this as matrix.

With the face that is formed with nesa coating (face) of this glass substrate with electroconductibility as the surface, on this surface, spraying dimethoxy methanol solution, under 60 ℃ of temperature, carry out 24 hours dryings, and in air, carry out 1 hour sintering under 500 ℃, forming by average film thickness thus on matrix surface is the film (first kind of nuclear) that the zinc oxide fine particles of 90nm constitutes.The dimethoxy methanol solution uses is to have dissolved the zinc acetate dihydrate, dissolved the solution of monoethanolamine with the concentration of 0.01 mol with the concentration of 0.01 mol.

In addition, as the surface, on this surface, to utilize purity be 99.9% zinc oxide forms zinc-oxide film (second kind of nuclear) as the sputter of target with the face that is formed with nesa coating (face with electroconductibility) of glass substrate.The average film thickness of this zinc-oxide film is 50nm.

Again with the face that is formed with nesa coating (face) of glass substrate with electroconductibility as the surface, on one side with 1500 rev/mins rotating speed rotary substrate, one side spin coating zinc acetate ethanolic soln (0.03 mol) on this surface, at room temperature after the drying, under 260 ℃, carry out burning till in 2 hours, obtained the surperficial matrix that is formed with the film (the third nuclear) that constitutes by zinc oxide fine particles.The average film thickness of the film that obtains like this is about 8nm during with the nuclear power microscopic evaluation.

Then, the matrix that is provided with these three kinds of nuclears being impregnated in electroless plating in reaction vessel applies and to carry out electroless plating in the liquid and apply.Apply in the liquid at employed electroless plating, solvent is a water, and solute is zinc nitrate hexahydrate and sodium hydroxide.The hexahydrated concentration of nitric acid in the plating solution is 0.06 mol, and the concentration sodium hydroxide in the plating solution is 0.75 mol.The pH value of plating solution is 13.2.What reaction vessel used is the pressure vessel that polypropylene is made.

Matrix is then the same with embodiment 1, is so that the posture of the bottom surface of matrix surface orientating reaction container is immersed in the plating solution.After it is carried out heating in 80 ℃, 1 hour, plating solution is replaced with the new heating in 80 ℃, 1 hour of carrying out again, has formed the arrange body of needle crystal.

Using the mean thickness of the arrange body of the needle crystal that first kind of karyomorphism become is 3.6 μ m.Crystalline growth finishes this arrange body of back (before cleaning) visual observation at once, finds that matrix is covered by arrange body in fact.But, when after it to arrange body (complex body) when handling, find that with scanning electron microscope the part of arrange body is peeled off from matrix, a part that shows arrange body has crackle and peels off, thereby can not cover matrix with arrange body.

Using the mean thickness of the arrange body of the needle crystal that second kind of karyomorphism become is 3.3 μ m.Observe this arrange body with scanning electron microscope and found first needle crystal and second needle crystal, wherein, the direction of first needle crystal in the angle that forms with the surface of above-mentioned matrix enters the angular range of regulation extended, second needle crystal is shorter than first needle crystal, and the direction in the wideer angular range that enters the angular range that comprises afore mentioned rules is extended.The matrix and the second needle crystal angulation narrow range, matrix are not arranged body and cover.

Use the mean thickness of the arrange body of the needle crystal that the third karyomorphism becomes to be about 3.4 μ m.Observe this arrange body with scanning electron microscope and find that implementing on the whole substrate surface of plating, arrange body has covered matrix, and peeling off of arrange body do not taken place yet.

Embodiment 9

Under condition similarly to Example 1, on matrix, make the complex body of the needle crystal that constitutes by zinc oxide.

The arrange body of resulting zinc oxide needle crystal has and arrange body identical construction as shown in Figure 2, and a plurality of the 3rd needle crystals (outside needle crystal) begin to extend from the front end of a part of first needle crystal.

The figure of Figure 13 A and Figure 13 B EBSP that to be the arrange body representing respectively to observe this zinc oxide needle crystal from first area side and second area side peel off from matrix.At Figure 13 A and Figure 13 B,, use light (being bordering on white) color showing with 001 face that forms big angle.

From finding from the observed EBSP of first area side (Figure 13 A), near the face of the first area side of the arrange body of zinc oxide needle crystal, the orientation of zinc oxide needle crystal disperses.

On the other hand, since along the face of the length direction of zinc oxide needle crystal perpendicular to 001, so, find from survey observed EBSP (Figure 13 B) from second area, near the face of the second area side of the arrange body of zinc oxide needle crystal, zinc oxide needle crystal is c axle orientation on the whole.

In Figure 13 B, there is the zone (representing with symbol c1 at Figure 13 B) of the orientation of needle crystal in disorder (being different from other regional orientation) in the part.The zone that this orientation is in disorder, be equivalent to have the zone of outside needle crystal (with reference to the 3rd needle crystal of figure 2), except this zone, with regard to the EBSP of Figure 13 B, the arrange body of needle crystal is in orientation on 001 direction (in Figure 13 B, representing the zone of zinc oxide needle crystal c axle orientation with symbol c2).

Like this, the EBSP of the arrange body by confirming needle crystal can confirm, has avoided outside crystalline influence, and the orientation difference of the first area of the arrange body of needle crystal and second area.

Figure 14 A and Figure 14 B resolve the EBSP shown in Figure 13 A and Figure 13 B respectively and the number of degrees in the face orientation of the zinc oxide needle crystal that obtains distribute.Transverse axis is represented face and 001 angulation of viewing area, and the longitudinal axis represents to form the degree of a face (area benchmark) of this angle.

At first area side (with reference to figure 14A), can confirm the face of angle of inclination from 0 degree to all face orientation of 90 degree since 001.Relative therewith, with regard to second area side (with reference to figure 14B), the number of degrees concentrate near in 001 the angular range.Though also can confirm the zone of angle of inclination near 90 degree, this zone is equivalent to outside needle-like crystalline zone.

Embodiment 10

Present embodiment utilizes electroless plating to apply the arrange body that forms the needle crystal that is made of zinc oxide at matrix surface, and making is with the dye-sensitized solar cell of this arrange body as the n N-type semiconductorN.The following describes present embodiment.

(electrical sheet resistance is the SnO of the doped F of 12 Ω/ to get a lip-deep nesa coating that is formed at glass substrate in advance ready ₂), and with this as matrix.As the surface, on this surface, applied zinc acetate ethanolic soln (0.03 mol) with the face that is formed with nesa coating (face) of this glass substrate with electroconductibility.And, by making glass substrate, this zinc acetate ethanolic soln is spin-coated on the glass substrate with the rotation of 1500 rev/mins rotating speed, at room temperature after the drying,, obtained the matrix that surface configuration has zinc oxide fine particles at 260 ℃ of following sintering.

The matrix that disposes this particulate put into reaction vessel and be immersed in electroless plating and apply liquid and carry out electroless plating and apply.In employed electroless plating applied liquid, solvent was a water, contained zinc nitrate hexahydrate and sodium hydroxide as solute with the concentration of 0.04 mol and 0.75 mol respectively in the aqueous solution.Reaction vessel has used the pressure vessel of polypropylene system.Matrix is then the same with embodiment 1, so that the posture of the bottom surface of matrix surface orientating reaction container is immersed in the plating solution.

In this reaction vessel, plating solution is carried out having formed the arrange body of the needle crystal that is made of zinc oxide at matrix surface in the process of heating in 85 ℃, 1 hour.That is needle crystal orientation.The brilliant about 45nm in footpath of this needle crystal, the length of this needle crystal is about 1.8 μ m.The density of the needle crystal of this moment is about 1000 of every square micron.

Then, as a comparison, made comprise at random towards the film (the first film) of needle crystal.With reaction soln, as the zinc oxide particle of growth cores, put into the pressure vessel that polypropylene makes with the stirring original paper of Te Fulong (registered trademark) covering surfaces and add a cover, carrying out magnetic with 800 rev/mins rotating speeds stirs, with 85 ℃ of heating 1 hour, obtained needle crystal simultaneously.

In reaction soln, solvent is a water, contains zinc nitrate hexahydrate and sodium hydroxide as solute with the concentration of 0.04 mol and 0.75 mol respectively in the aqueous solution.The dosage of employed reaction soln is 40 milliliters.The median size of zinc oxide particle is 20nm, and the addition of zinc oxide particle is 0.01 gram.

Utilize aforesaid method, obtained being dispersed with the reaction soln of zinc oxide needle crystal.By this reaction soln is carried out 10 minutes centrifugation with 10,000 rev/mins rotating speed, separate clear liquid and precipitation, cast out clear liquid and add distilled water, carry out aforesaid operations repeatedly and reach about 7 until the pH of clear liquid value.The precipitation that obtains is carried out wet mixing together with 40 ℃ of dryings and methyl ethyl diketone, polyoxyethylene glycol and distilled water, obtained comprising the slurry of zinc oxide needle crystal.

(electrical sheet resistance is the SnO of the doped F of 12 Ω/ at a lip-deep nesa coating that is formed at glass substrate with this slurry coating ₂) on, after 130 ℃ of dryings, carry out 1 hour sintering at 450 ℃, repeat aforesaid operations 3 times, obtained comprising at random towards the first film of zinc oxide needle crystal.The thickness of the first film is 4.7 μ m.

In addition, as a comparison, made the film (second film) that constitutes by zinc oxide fine particles.The zinc oxide fine particles that with median size is 20nm carries out wet mixing with methyl ethyl diketone, polyoxyethylene glycol and distilled water, has obtained the slurry of zinc oxide fine particles.(electrical sheet resistance is the SnO of the doped F of 12 Ω/ at a lip-deep nesa coating that is formed at glass substrate with this slurry coating ₂) on, after 130 ℃ of dryings, carry out 1 hour sintering at 450 ℃, repeat aforesaid operations 3 times, obtained comprising at random towards second film of zinc oxide fine particles.The thickness of second film is about 4.5 μ m.

Use above-mentioned arrange body, the first needle-like film and the second needle-like film, made dye-sensitized solar cell in the following order.

At first, the ethanolic soln that has dissolved the Ru complex compound is remained on 40 ℃, in this solution,, flooded 15 minutes, make each surface adsorption Ru pigment of arrange body and film with the glass substrate that is formed with the nesa coating of forming matrix with above-mentioned arrange body and above-mentioned two kinds of films each.And as the counter electrode of nesa coating (matrix of arrange body), use be that (electrical sheet resistance is the SnO of the doped F of 12 Ω/ with the nesa coating of thickness evaporation on a surface that is formed at glass substrate of about 1000 dusts with platinum ₂) on.

By between this counter electrode and matrix, inserting pad, this counter electrode and matrix are made the state that is formed with short space between it, inject electrolyte solution at this short space.As electrolyte solution, use be the solution that in acetonitrile, has dissolved lithium iodide and iodine.So just obtained dye-sensitized solar cell.

With produced like this dye-sensitized solar cell, be to compare under the such condition of about 2 square centimeters, the about 95 nmole/square centimeters of pigment adsorptive capacity at generating area.Consequently, use possesses the dye-sensitized solar cell of above-mentioned arrange body (zinc oxide needle crystal arrange body of the present invention), the efficiency of conversion of its per unit amount of pigment is the highest, and used the dye-sensitized solar cell of above-mentioned the first film (contain at random towards the film of zinc oxide needle crystal), the efficiency of conversion of its per unit amount of pigment is minimum.

The generated energy of these dye-sensitized solar cells, if with used above-mentioned the first film as benchmark, then used above-mentioned arrange body up to 210%, and used above-mentioned second film up to 80%.

Then, carry out the impedance measuring of above-mentioned arrange body and above-mentioned two kinds of films (sample), estimated electrochemical properties.Mensuration utilizes 3 utmost points to measure, carry out under the irradiation of white light.The sample of the determination object that will be connected with aluminium foil is as active electrode, the reference electrode that uses the reverse electrode made by platinum, made by silver.Ionogen has used the acetonitrile solution that contains iodine 0.05 mol, lithium iodide 0.1 mol.

Measure with AC impedence method.Kept 1 minute under rayed with the state that does not apply voltage, with stable voltage as applying voltage.The range of frequency of measuring is made as from 100 kilo hertzs to 100 millihertzs.

The result who obtains is made the template graphical presentation at Figure 15.In Figure 15, curve g1 is the curve of the needle crystal (arrange body) of the orientation measured, curve g2 is the curve of the film (the first film) that constitutes of the zinc oxide needle crystal by there not be orientation measured, and curve g3 is the curve of the film (second film) that is made of zinc oxide fine particles of mensuration.As can be seen, the needle crystal of orientation (arrange body) is faster than other specimen reaction speed.

Embodiment 11

Present embodiment has been made complex body, and this complex body possesses matrix and applies by electroless plating on this matrix surface and is formed with oxide needle-like crystalline arrange body.The following describes present embodiment.

Get glass substrate (constituting) in advance ready by so-called sodium lead glass, and with this as matrix.On a face of this matrix, paste カ プ ト Application テ one プ (registered trademark) as mask, with the face that is pasted with this band as the inside, with the face of not pasting band as the surface.

Then, this matrix being immersed in electroless plating in the reaction vessel (pressure vessel) that Te Fulong (registered trademark) makes applies in the liquid.Apply in the liquid at employed electroless plating, solvent is a water, and solute is zinc nitrate hexahydrate and sodium hydroxide (NaOH).The hexahydrated concentration of nitric acid in the plating solution is 0.06 mol, and the concentration sodium hydroxide in the plating solution is 0.75 mol.In this reaction vessel, plating solution is carried out having formed the arrange body of the needle crystal that is made of zinc oxide on the surface of matrix in the process of 85 ℃ of heating in following 3 hours.

In addition, the same with embodiment 1 when being immersed in matrix in the plating solution (comprising heat-processed), use supporting mass so that the posture support base of the bottom surface (down) of the surface of matrix (making the face of a side of needle crystal growth) orientating reaction container.Do like this, can make from front end to diminish, thereby obtain the good arrange body of light transmission to the density of the needle crystal of a plurality of axial growth from the needle crystal of matrix direct growth.

Confirm that with electron microscope in the complex body that obtains, matrix is covered by the arrange body of needle crystal in fact.The brilliant the thickest about 750nm in footpath of needle crystal, the thinnest about 60nm, the length of these needle crystals is about about 3 μ m.The density of the needle crystal of this moment is about 18 of every square micron.

In addition, do not carrying out that electroless plating applies but adopt under the situation of manufacture method of electrolysis plating, matrix only is confined to have the material of electroconductibility.Therefore, be difficult to as present embodiment, on glass substrate, form the arrange body of needle crystal.In addition, even for the situation that on matrix, forms the arrange body of needle crystal with complicated shapes such as design, when carrying out the electrolysis plating, be difficult to carry out the control that electric field is concentrated, but if electroless plating applies, manufacturing installation is become simply, also can form uniform arrange body at an easy rate.In addition, even under the situation of the arrange body that forms needle crystal on the large-scale matrix, with regard to electroless plating applies, because in fact as long as solvent, catalyzer and temperature are same condition, though then the speed of growth of needle crystal matrix which place all much at one, so be easy to obtain the arrange body of uniform thickness.

As described in present embodiment, even, also can reach the deposited effect (reference example 1) of electroless plating that is better than above-mentioned electrolysis plating making needle crystal directly from the glass substrate growth.

Claims (22)

1. a species complex, it possesses: matrix and be formed at described matrix surface and the arrange body of a plurality of needle crystals of being made up of oxide compound, this complex body be characterised in that,

Described arrange body comprises: the first area of described matrix side and with respect to the second area of described first area at the opposition side of described matrix,

Than low in described first area, the surface of described matrix is covered by described needle crystal in fact in described first area the ratio in cross section of described needle crystal of face that occupies the surface that is parallel to described matrix at described second area.

2. a species complex, it possesses: matrix and be formed at described matrix surface and the arrange body of a plurality of needle crystals of being made up of oxide compound, this complex body be characterised in that,

Described arrange body comprises: the first area of described matrix side and with respect to the second area of described first area at the opposition side of described matrix,

Compare with described second area, the orientation of the described needle crystal of described first area is low, and the surface of described matrix is covered by described needle crystal in fact in described first area.

3. complex body as claimed in claim 2 is characterized in that, the ratio in cross section of described needle crystal of face that occupies the surface that is parallel to described matrix at described second area than low in described first area.

4. a species complex, it possesses: matrix and be formed at described matrix surface and the arrange body of a plurality of needle crystals of being made up of oxide compound, this complex body be characterised in that,

Described needle crystal comprises first needle crystal and second needle crystal, wherein, described first needle crystal from the surface that is positioned at described matrix and each of a plurality of starting points away from each other begin to extend to the direction that enters the angular range of regulation with described matrix surface angulation, described second needle crystal is shorter than described first needle crystal, and extend from the direction that each starting point begins in entering the more wide range that comprises described predetermined angular scope

The exposed division that exposes from described first needle crystal on the surface of described matrix is covered by described second needle crystal in fact.

5. as each described complex body in the claim 1～3, it is characterized in that,

Described needle crystal comprises first needle crystal and second needle crystal, wherein, described first needle crystal from the surface that is positioned at described matrix and each of a plurality of starting points away from each other begin to extend to the direction that enters the angular range of regulation with described matrix surface angulation, described second needle crystal is shorter than described first needle crystal, and extend from the direction that each starting point begins in entering the more wide range that comprises described predetermined angular scope

The exposed division that exposes from described first needle crystal on the surface of described matrix is covered by described second needle crystal in fact.

6. as each described complex body in the claim 1～5, it is characterized in that in described needle crystal, length direction is consistent with the c direction of principal axis, the length direction of described needle crystal is orientated along the direction of regulation.

7. as each described complex body in the claim 1～6, it is characterized in that, also comprise a plurality of outside needle crystal of extending outside the arrange regional of described needle crystal with end described matrix opposition side from described needle crystal.

8. complex body as claimed in claim 7 is characterized in that, described a plurality of outside needle crystals are extended to any direction in the angular range that does not interfere with described arrange body.

9. as each described complex body in the claim 1～8, it is characterized in that described needle crystal is made of zinc oxide.

10. as each described complex body in the claim 1～9, it is characterized in that, have crystal orientation a plurality of tiny areas at random at the near interface of described arrange body and described matrix.

11. a photo-electric conversion element is characterized in that,

Possess each described complex body in the claim 1～10,

The described arrange body of described complex body is a conductivity type,

Also possesses semiconductor portion with the surperficial opposed reverse conductivity type of described needle crystal.

12. a luminous element is characterized in that,

Possess each described complex body in the claim 1～10,

The described arrange body of described complex body is a conductivity type,

Also possesses semiconductor portion with the surperficial opposed reverse conductivity type of described needle crystal.

13. an electrical condenser is characterized in that,

Possess each described complex body in the claim 1～10,

The described arrange body of described complex body plays a role as first electrode,

Also possess and second electrode and the dielectric medium between described first electrode and described second electrode of described first electrode contraposition.

14. an electrical condenser is characterized in that,

Possess each described complex body in the claim 1～10,

The described arrange body of described complex body plays a role as first polarizing electrode,

Also possess and opposed second polarizing electrode of described first polarizing electrode and the electrolyte solution between described first polarizing electrode and described second polarizing electrode.

15. the manufacture method of a species complex is made as each described complex body in the claim 1～10, it is characterized in that, comprises following operation:

Comprise by employing and to be selected from X ¹OH (in the formula, X ¹Any element of expression Na, K and Cs), X ² ₂CO ₃(in the formula, X ²Any element of expression H, Na, K and Cs) and NH ₃In at least a alkali and pH value apply method at the electroless plating of the plating solution more than 13, by a plurality of crystal grain, be to form described needle crystal in the substrate that constitutes of crystal orientation crystal grain at random.

16. the manufacture method of a species complex is made as each described complex body in the claim 1～10, it is characterized in that, comprises following operation:

Comprise by employing and to be selected from X ¹OH (in the formula, X ¹Any element of expression Na, K and Cs), X ² ₂CO ₃(in the formula, X ²Any element of expression H, Na, K and Cs) and NH ₃In at least a alkali and pH value apply method at the electroless plating of the plating solution more than 13, be wetting ability and on the surface for forming described needle crystal in amorphous substrate.

17. the manufacture method as claim 15 or 16 described complex bodys is characterized in that described substrate comprises the surface portion of described matrix.

18. the manufacture method as each described complex body in the claim 15～17 is characterized in that,

Also be included in the operation of the surface configuration particle of described matrix,

Described substrate comprises the described particle that is disposed on the described matrix.

19. the manufacture method of complex body as claimed in claim 18, it makes the described complex body of claim 10, and the manufacture method of this complex body is characterised in that,

Described particle is by constituting with described tiny area identical materials.

20. the manufacture method as claim 18 or 19 described complex bodys is characterized in that,

The operation that disposes described particle is included in to form on the described matrix by described particle and constitutes and the operation of the film of mean thickness below 50nm.

21. the manufacture method as claim 18 or 19 described complex bodys is characterized in that, the operation that disposes described particle is included in to form on the described matrix by described particle and constitutes and the operation of the film of mean thickness below 20nm.

22. the manufacture method as each described complex body in the claim 18～21 is characterized in that, the operation that disposes described particle comprises:

On described matrix configuration constitute described particle material precursor operation,

Decompose described precursor and form the operation of described particle.

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