CN101179005A - Exhaust air system, semi-conductor manufacturing installation for manufacturing thin film by the same and method thereof - Google Patents
Exhaust air system, semi-conductor manufacturing installation for manufacturing thin film by the same and method thereof Download PDFInfo
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- CN101179005A CN101179005A CNA2006101382723A CN200610138272A CN101179005A CN 101179005 A CN101179005 A CN 101179005A CN A2006101382723 A CNA2006101382723 A CN A2006101382723A CN 200610138272 A CN200610138272 A CN 200610138272A CN 101179005 A CN101179005 A CN 101179005A
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Abstract
A semiconductor manufacture device and a film manufacture method with the device are provided. The semiconductor manufacture device comprises a chamber with preliminary defined reaction space and a nozzle element, which is used for injecting preliminary defined gas transmitted through a gas supply hole into the chamber. The nozzle element comprises a baffle board, a heating block and a pump interface. The baffle board and the gas supply hole are hanged together. The heating block is under the nozzle element so that a wafer can be placed over the heating block. The pump interface comprises a plurality of discharge ports. As high temperature control can be realized easily, a high temperature hard cover can be formed to improve the quality of the film. Besides, the reaction gas can be evenly distributed on the nozzle and travel through the nozzle and be quickly injected into the substrate of the heater by using the baffle board, which is hanged together with the gas supply hole. Further more, the time taken by the reaction gas to travel through the nozzle and reach the substrate is minimized, which in turn minimizes the time to stabilize the reaction temperature. In addition, maintenance time and cost of the device are reduced.
Description
Technical field
The invention relates to a kind of gas extraction system and use this system to make the semiconductor-fabricating device and the method for film, and particularly relevant for a kind of chemical vapour deposition (CVD) (chemical vapor deposition with increased in size, CVD) equipment, it can stably be carried out high-temperature control and can stably import into discharge and handle gas.
Background technology
In general, when the semiconductor element pattern becomes meticulousr output with maximization per unit wafer, can utilize light-sensitive surface for energy-sensitive.Yet because because material layer under light-sensitive surface can produce the reverberation of diffusion, (anti-reflection coating, ARC) processing procedure prevents the reverberation that spreads so can carry out the antireflection coating of using nitride film.Moreover, because 200 millimeters or larger sized wafer have been used in the increase gradually of wafer size at present.
This large scale wafer can experience the required various processing procedures of semiconductor element manufacturing at least one chamber (chamber).This processing procedure comprise be used to feed to the deposition reaction gas of chamber to form the processing procedure of material layer on the wafer and according to pre-defined pattern and use the etching reaction gas etch to be formed on the processing procedure of the material layer on the wafer.
For example, wafer can experience on the wafer by the processing procedure of the predetermined material layer (for example sull or nitride film) of CVD, PECVD or similar approach deposition, by etched material layer with the form contact hole processing procedure that semiconductor substrate and metal wire are electrically contacted each other, the silicon processing processing procedure that removes the processing procedure of the photoresist pattern that is used for the contact hole pattern structure and remove the matrix silicon layer that during the etching contact hole, damages with etching with ashing.
Be used for depositing or etched reacting gas from be directed into chamber to carry out the case of deposition or etch process with concurrent, gas injects the unit can be installed in the top of chamber so that reacting gas can be evenly distributed in the whole surface of wafer.
Yet in this correlation technique, because the scattered reflection of the bottom pattern of light-sensitive surface and can't accurately form the pattern of light-sensitive surface, wherein when element pattern became meticulousr, light-sensitive surface can be to the luminous energy sensitivity.Therefore, for fear of the generation of scattered reflection, can carry out the antireflection coating process to form nitride film or analog.Yet the light-sensitive surface pattern can collapse during the subsequent etch processing procedure.Moreover when wafer size became big, gas injects the unit can't inject reacting gas equably on the whole surface of wafer.
Fig. 1 is the notion profile that illustrates the correlation technique semiconductor-fabricating device.
Fig. 2 is the perspective view of correlation technique shower nozzle (showe rhead) and baffle plate (baffle).
Please refer to Fig. 1 and Fig. 2, the bottom that the correlation technique semiconductor-fabricating device comprises chamber (chamber) 10 with reaction compartment, be configured in chamber 10 is to allow wafer 21 heating (heater) block 20 placed on it, to be arranged on the chamber 10 the ejection head unit 30 of reacting gas to chamber 10 to be provided, to be formed on chamber 10 both sides and at a plurality of steam vents 40 between heating block 20 and the ejection head unit 30 and be used for pump interface 42 with unreacted gas permeation steam vent 40 discharge chambers 10.Moreover gate valve (not shown) can be formed on the side surface of chamber 10.In addition, extra electricity slurry generation unit can be arranged in the chamber to produce the electricity slurry.
Correlation technique ejection head unit 30 comprises gas supply orifice 31, shower nozzle 33 that is fixed in reacting gas supply orifice 31 that can inject reacting gas and the baffle plate of making in advance 32 that is installed in shower nozzle 33, wherein baffle plate 32 have be same as shower nozzle size to inject reacting gas equably to shower nozzle 33.
In this ejection head unit 30, baffle plate 32 can form with the size that is same as shower nozzle 33.Therefore, equipment regularly and during unscheduled maintenance required plenty of time and cost can throw into question.Just, in the case of electric arc processing procedure, shower nozzle 33 can be affected and therefore damage with the baffle plate of making in advance 32 that is installed in shower nozzle 33 during processing procedure.Therefore, baffle plate 32 should be changed with shower nozzle 33.Moreover in the case that baffle plate 32 is disassembled and made up in shower nozzle 33 more afterwards, the assembled state of baffle plate can change because of worker's technology.Therefore, can cause again because the baffle plate 32 in ejection head unit 30 is starched running rate and the productivity that the arc light generation makes preventive maintenance time become longer thereby reduced equipment with gaseous contamination or electricity in the shower nozzle 33.Moreover, also can produce bigger maintenance cost.
In addition, the method for using the correlation technique semiconductor-fabricating device to make film also has following point.
Just, reaction gas is known from experience the entire inner space that imports and be supplied to equably by the device of baffle plate 32 shower nozzle 33 via the gas supply orifice 31 of ejection head unit 30.Afterwards, reaction gas is known from experience via shower nozzle 33 injecting chamber 10 equably.At this moment, low-temp reaction gas can be directed into wafer (it can be stabilized in the film formation temperature) once more so that the temperature of wafer can descend a little.Just, when the low temperature reacting gas is by baffle plate 32 and shower nozzle 33, have time delay, therefore the temperature in chamber 10 can descend immediately, and film can be preferably in the stable temperature deposit over time.
Moreover in the correlation technique semiconductor-fabricating device, steam vent 40 and pump interface 42 can be arranged on the sidewall of the chamber between ejection head unit 30 and the heating block 20, other products when removing the residue reacting gas in chamber 10 thus and reacting.Yet, in the example of large scale device, the removing fully of unreacting gas can in the edge of heating block 20, carry out lentamente and when only removing reacting gas via the side surface of chamber unreacting gas can't remove equably.To on wafer 21, form high quality thin film when therefore, unreacting gas reacts once more and will become quite difficult on wafer 21 with uniform thickness.Moreover, can be difficult to confirm the even distribution of reacting gas.Just, be not easy according to the increase of the reacting gas that is injected into chamber 10 or reduce the distribution control reacting gas.
In addition, can produce wafer when moving and the problem that drops by blading, wherein blading be the wafer Filtting device of AMT mechanical arm and in order to rotation, lift up and down and move wafer.Afterwards, after film forms processing procedure, can in chamber, use latent heat (latentheat) to clean.Therefore, the productivity of the cleaning efficiency of chamber and semiconductor-fabricating device can descend.
Summary of the invention
The present invention will solve the above problems, therefore purpose of the present invention just provides a kind of gas extraction system, semiconductor-fabricating device and the method for using this device to make film, but the size of its optimization baffle plate (it is provided at the porch that reacting gas is directed into the shower nozzle of large scale equipment) with apace with the reacting gas that distributes equably in the entire inner space of shower nozzle and minimize distributing gas to wafer institute's time spent, in addition, revise reacting gas and remove other products and equably the distribute reacting gas thereby improve the uniformity of film of path when removing easily that reacting gas is with reaction in chamber.
According to the invention ,the aim of the invention is to provide a kind of gas injection system, it comprises gas supply device, baffle plate and shower nozzle.Gas supply device comprises the gas supply orifice, gas can provide via the gas supply orifice, baffle plate is to combine with the gas supply orifice and have identical or greater than the size of gas supply orifice, baffle plate is the position that places from the pre-defined distance in gas supply orifice below, and shower nozzle is to be disposed at the baffle plate below and is to chamber in order to injecting gas equably.
At this, when the size of gas supply orifice was 1, then the size of baffle plate was preferably in 1.0 to 10.0 scope.
At this moment, baffle plate preferably sees through welding and fixed routine and gas supply orifice and combines.
Certainly, the baffle plate shaping for circular dull and stereotyped, have the dull and stereotyped of conical or hemispheric upper surface or have and be formed on the flat board of a part of irregular figure of its upper surface at least.
A further object of the present invention provides a kind of gas extraction system, and it comprises exhaust unit, exhaust guide wire and exhaust pump.Exhaust unit comprises steam vent, and wherein gas is to import via steam vent.The gas that the exhaust guide wire is discharged in order to the guiding desire is to steam vent.Exhaust pump is linked to the exhaust guide wire.
At this, exhaust unit is a thin plate preferably, has bending or inclined surface on its edge, and a plurality of steam vent is built in bending or inclined surface.
Another purpose of the present invention provides a kind of semiconductor-fabricating device, and it comprises chamber, ejection head unit, heating block and pump interface.Ejection head unit is in order to inject the pre-defined gas that imports via the gas supply orifice to chamber, ejection head unit comprises the baffle plate that combines with the gas supply orifice, and baffle plate is to have identical or greater than the size of gas supply orifice and be the position that places from the pre-defined distance in gas supply orifice below.The heating block provides below ejection head unit to allow wafer placed on it.Pump interface is to place below the heating block and with a plurality of steam vents to provide.
Ejection head unit preferably includes gas supply device, baffle plate and shower nozzle.Gas supply device comprises the gas supply orifice, and gas can provide via the gas supply orifice.Baffle plate is to combine through welding procedure and gas supply orifice.Shower nozzle be disposed at baffle plate below and in order to injecting gas equably to chamber.
Preferably, when the size of gas supply orifice was 1, then the size of baffle plate was in 1.0 to 10.0 scope, and in the distance of baffle plate and gas supply orifice preferably in 0.1 to 50 scope.
At this moment, pump interface comprises exhaust unit, exhaust guide wire and exhaust pump.Exhaust unit can be shaped as a thin plate, has bending or inclined surface on its edge, and a plurality of steam vent is built on bending or the inclined surface, and wherein gas is to import via steam vent.The exhaust guide wire is that the gas of discharging in order to the guiding desire is to steam vent.Exhaust pump is to be linked to the exhaust guide wire.
In addition, the heating block comprises heating plate and supporter, heating element and the temperature-sensitive sticker that is formed by the AIN material effectively; And the heating block can be carried out the temperature control in 400 to 600 degree scopes Celsius.
Certainly, be used for more can being provided at the outside of chamber than the bottom at the extra heater of cleaning procedure heating chamber.
Another object of the present invention provides a kind of method of using semiconductor-fabricating device to make semiconductive thin film, wherein semiconductor-fabricating device comprises chamber, ejection head unit, heating block and pump interface, and ejection head unit is in order to inject the pre-defined gas that imports via the gas supply orifice to chamber, ejection head unit comprises the baffle plate that combines with the gas supply orifice in addition, baffle plate is to combine with the gas supply orifice and have identical or greater than the size of gas supply orifice, baffle plate is the position that places from the pre-defined distance in gas supply orifice below, the heating block provides below ejection head unit to allow wafer placed on it, pump interface is to place heating block below and provide with a plurality of steam vents, and the method comprises: place on the heating block of wafer in chamber and heating afterwards places wafer on the heating block; Provide processing gas to chamber on wafer, to form film by seeing through ejection head unit; And remove impurity via pump interface.
Preferably, wafer can be heated to the temperature of 400 to 600 degree Celsius and handle gas and can come start by the device of electricity slurry.
Description of drawings
Fig. 1 is the notion profile that illustrates the correlation technique semiconductor-fabricating device.
Fig. 2 is the perspective view of correlation technique shower nozzle (showe rhead) and baffle plate (baffle).
Fig. 3 illustrates the notion profile of semiconductor-fabricating device according to the embodiment of the invention.
Fig. 4 is the enlarged drawing of the A part of displayed map 3.
Fig. 5 A to 5E and 6A to 6C are the notion profiles that illustrates baffle plate according to the embodiment of the invention.
Fig. 7 is the conceptual schematic view that shows pump interface according to the embodiment of the invention.
Fig. 8 illustrates the notion profile that uses semiconductor-fabricating device to make the method for semiconductor element according to the embodiment of the invention.
10: chamber (chamber) 20: heating (heater) block
21: wafer 30: ejection head unit
31: gas supply orifice 32: baffle plate
33: shower nozzle 40: steam vent
42: pump interface 110: chamber
120: heating block 121: wafer
122: heating plate 124: supporter
126: heating element 130: ejection head unit
131: gas supply orifice 132: baffle plate
133: shower nozzle 140: pump interface
142: steam vent 143: the exhaust guide wire
144: pump 210: wafer
220: hard cover screen film 230: anti-reflection film
240: the light-sensitive surface pattern
Embodiment
In the drawings, similar elements can be numbered with duplicate numbers.
Fig. 3 illustrates the notion profile of semiconductor-fabricating device according to the embodiment of the invention, Fig. 4 is the enlarged drawing of the A part of displayed map 3, Fig. 5 A to 5E and 6A to 6C are the notion profiles that illustrates baffle plate according to the embodiment of the invention, and Fig. 7 is the conceptual schematic view that illustrates pump interface according to the embodiment of the invention.
Please refer to Fig. 3 to Fig. 7, semiconductor-fabricating device of the present invention comprises chamber 110, ejection head unit 130, heating block 120 and pump interface 140, its middle chamber 110 has predefined reaction compartment and pre-defined bottom bend surface, ejection head unit 130 comprise the baffle plate 132 that combines with gas supply orifice 131 with injecting gas to chamber 110, heating block 120 is to be configured in ejection head unit 130 belows allowing wafer 121 placed on it, and pump interface 140 comprises a plurality of steam vents 142 on moulding curved bottom surface at chamber 110.Semiconductor-fabricating device more comprises the gate valve (not shown) in order to the open and close of control chamber 110, and wafer 121 is to be loaded on the heating block 120 or from chamber 110 through gate valve to take out.Moreover the pressure in chamber 110 can be maintained fixed by the device of gate valve.In addition, semiconductor-fabricating device more comprises extra pressure controller (not shown) and extra electricity slurry generator (not shown), wherein the extra pressure controller is in order to remaining on chamber 110 under the fixing internal pressure, and extra electricity slurry generator is in order to produce the electricity slurry in chamber 110.At this, heating block 120 can increase to the inside of chamber 110 depositing temperature (400 to 600 degree Celsius approximately) and keep this state.
In addition, chamber 110 can upwardly open and more provide Pit cover (not shown) to hide the unlatching upside of chamber 110.Moreover ejection head unit 130 can be built in both allocations of Pit cover.Certainly, chamber 110 can be construed as single unit or be divided into upper chamber and lower chambers.
The heater coil (heater coil) (not shown) that can keep high temperature (Celsius approximately 400 to 600 spend) can be provided in the block and can form in heating in order to be written into and to take out the extra jacking pin (lift pin) (not shown) of wafer 121.Moreover, can be provided for measuring the sensor of the temperature of heating block 120 extraly.Certainly, also can provide the driving shaft that allows heating block itself to move up and down.Heating block 120 preferably has the shape that is same as wafer 121.Being more preferably heating block 120 is to come construction greater than wafer 121.Moreover one or more wafers 121 can place on the heating block 120.
This heating block 120 comprises heating plate 122 and supporter 124, and it is constituted with the AIN material.In addition, heating element 126 is mounted in the heating block 120, and can be provided for the temperature-sensitive sticker (not shown) of sensing wafer heating-up temperature.At this moment, heater coil can preferably be used as heating element 126.Moreover, preferably the single heating coil continuously be arranged in equably on the whole heating plate 122.Certainly, the invention is not restricted to this, various heaters all can provide and heat whole heating block 120 equably.Preferably this heating block 120 can produce the heat of 100 to 700 degree Celsius approximately and keep the heat that is produced.Just, the heat with 400 to 600 high temperature Celsius can be imparted to wafer 121 to increase the intensity that will place the film on the wafer 121.
As shown in Figure 4, ejection head unit 130 comprise can provide the gas of gas supply orifice 131, via welding and gas supply orifice 131 combine and arrange to the baffle plate 132 of the end of gas supply orifice 131 and be configured in baffle plate 132 belows in order to injecting gas equably to the shower nozzle 133 of chamber 110.
Preferably baffle plate 132 is to make according to the optimum size that is used for gas supply orifice 131 sizes.Just, the size of optimization baffle plate 132 so that reacting gas can be evenly distributed in the entire inner space of shower nozzle 133 and make reacting gas via shower nozzle 133 to arrive the required times of matrix be minimum so that required time of stopping reaction temperature (400 to 600 degree Celsius) for minimum.Owing to know from experience collision baffle plate 132 at least once, know from experience the whole zone that is provided at shower nozzle 133 equably via gas supply orifice 131 straight lines reaction gas forward via the reaction gas that gas supply orifice 131 provides.So far, the size of baffle plate preferably can reduce.Just, the size T1 that supposes gas supply orifice 131 is 1, and then the size T2 of baffle plate 132 is preferably in 1.0 to 10.0 scope.More preferably the size T2 of baffle plate 132 is in 1.5 to 5.5 scope.In addition, gas supply orifice 131 bottoms to the distance H 1 between the baffle plate 132 preferably 0.1 to 20 centimeter scope.
Above-mentioned scope can be according to the size of size, flow rate and the baffle plate of gas supply orifice and is changed.
As shown in Figure 4, baffle plate 132 preferred shape are dull and stereotyped.Just, the baffle plate optimum shape is circular dull and stereotyped.Certainly, as Fig. 5 A to 5E, various patterns can be built in planar surface or dull and stereotyped upside circular cone ground construction or bending so that gas can distribute equably.Just, flat board can be with top conical surface construction shown in Fig. 5 A.In other words, flat board can be made with the sub-shape of bamboo hat.Shown in Fig. 5 B, flat board also can come construction with top curved surface.In addition, pre-defined pattern can construction on the surface of baffle plate 132.Shown in Fig. 5 C, the irregularly shaped entire upper surface that is built in flat board.Shown in Fig. 5 D, the irregularly shaped side that is built in flat board.Shown in Fig. 5 E, the uneven figure with regular pattern also can be built in dull and stereotyped entire upper surface.
Above-mentioned shape and pattern can provide at least a portion on the surface of the gas that exposure provides from gas supply orifice 131.The surface that exposes gas can be made with a plurality of spirals shown in spiral-shaped, Fig. 6 B shown in Fig. 6 A or a plurality of irregular patterns shown in Fig. 6 C.
As mentioned above, the size of baffle plate 132 can reduce and be exposed to the surface of gas also can be revised, so that gas can be infused in the upper surface of shower nozzle 133 equably.
In addition, baffle plate 132 can combine with gas supply orifice 131.Just, gas supply orifice 131 can use with baffle plate 132 and couple element welding each other integrally as shown in the figure, and this couples element is to separate with gas supply orifice 131 to allow baffle plate 132 as extra extension rod.Certainly, hole and baffle plate can come integrally to couple each other through bolt.At this moment, do not hinder gas and inject, be used to couple coupling element and can doing various changes of baffle plate 132 and gas supply orifice 131 via baffle plate 132 as long as couple element.Just, baffle plate 132 and gas supply orifice 131 can use and singlely couple element or a plurality of element that couples is coupled to each other.Therefore, because baffle plate 132 does not need independent separating when taking ejection head unit 130 apart, so maintenance cost can reduce.Moreover the 131 required times of exchange baffle plate 132 and gas supply orifice can reduce during equipment periodic maintenance.
In this embodiment, pump interface 140 is that the bottom (that is bottom of heating block) that is built in chamber 110 is so that the gas that unreacted is but stayed in the chamber 110 can eliminating from chamber 110 equably.Pump interface 140 comprises that the steam vent 142 of the basal surface that is built in chamber 110 is to allow unreacting gas by this hole, pump interface 140 also comprises the exhaust guide wire 143 of the exterior circumferential (it is the place of steam vent 142 construction) that is configured in chamber 110, and pump interface 140 comprises that more pump 144 in the part that is built in exhaust guide wire 143 is to be expelled to the outside with gas.
After film forms processing procedure, other products when unreacting gas and reaction can be stayed on the large scale wafer 121, but it can be removed below heating block 120 by the device of pump interface 140 is next via interior wall and the crack between heating block 120 edges at chamber 110 according to the present invention.At this, the whirlpool phenomenon that is produced between expulsive stage downwards can by allow chamber 110 with curved bottom surface and in curved bottom surface construction steam vent 142 avoid.Just, can not be perpendicular to one another with basal surface with sidewall and come the bottom of construction chamber 110, and steam vent 142 can bore the curved surface of chamber with pre-defined angular bend and inclination mode.Steam vent 142 is not limited to place this, and it can be built in any zone of the bottom of heating block 120.Moreover fixing size be arranged and be kept to steam vent 142 can rule evenly and at intervals.Certainly, steam vent 142 also can various sizes be arranged with various intervals.The preferable size of steam vent be in 1 to 100 millimeter scope and the equispaced between the steam vent preferably in 1 to 100 millimeter scope.These a little steam vents can carry out effective pump-down process.
The steam vent 142 of present embodiment can be shaped as extra flat board, and it can be arranged in order to the bottom of chamber 110 or with chamber 110 and combine.
The semiconductor-fabricating device of aforementioned present embodiment can be arranged and uses in semiconductor is made processing procedure with the pattern of single chamber.In addition, a plurality of chambers also can link with combination form and another chamber.Just, semiconductor-fabricating device of the present invention more comprises in the part of placing wafer and is written into lock and in order to from being written into the barrow of lock carrying wafer to chamber.A plurality of chambers can link with the protection internal environment by device and another chamber of gate valve.
Below will describe the running of the semiconductor-fabricating device of present embodiment in detail.
After gate valve is opened, place to be written into the wafer locked 121 and can to place on the heating block 120 of chamber 110 (it comprises pre-defined reaction compartment) of present embodiment by barrow.After gate valve was closed, the pressure in chamber 110 can be adjusted to deposition pressure and heating block 120 can be heated to Celsius 400 to 600 depositing temperatures of spending.At this moment, need one section to stablize and allow wafer to be stabilized in said temperature to carry out successive process.
During this period, outside deposition gas can see through ejection head unit 130 and be sprayed to chamber 110 equably.At this moment, deposition gas know from experience to see through that gas supply orifice 131 injects and the gas that imported by gas supply orifice 131 can be dispersed on the shower nozzle 133 equably by the device of the baffle plate 132 that combines with the hole.In the present embodiment, because baffle plate 132 can combine with optimum size and gas supply orifice 131, so can minimize that deposition gases is sprayed and by 130 time spents of ejection head unit and arrive matrix afterwards.Therefore, in chamber 110, change to such an extent that instantaneous temperature can minimize in deposition gases injection period.For example, the baffle plate 132 of ejection head unit 130 with the case of making greater than the size of 1.2 to 2.0 times of gas supply orifices in, the gas that straight-line pass gas supply orifice 131 moves can collide baffle plate 132 and scatter with horizontal direction afterwards.In addition, because the size of baffle plate 132 is little,, and therefore slightly change to such an extent that the time can shorten in gas injection period chamber 110 temperature so the gas of collision baffle plate 132 can arrive matrix at short notice.Therefore, can shorten the stabilization time of thin film deposition.
The deposition gas cognition that is dispersed in equably on the shower nozzle 133 via baffle plate 132 is sprayed to chamber 110 equably through shower nozzle 133.At this moment, gas arrive matrix institute's time spent and in gas injection period chamber temperature slightly change to such an extent that the time can be according to the injection rate of deposition gases and injection rate and different.Moreover, but the speed of gas injecting chamber 110 also can be changed and via the uniformity of shower nozzle 133 injecting gas also Be Controlled.All can be used as deposition gases according to the film all gases that will be formed on the wafer 121.
As mentioned above, best is that the temperature of wafer 121 can use heating block 120 in chamber 110 to increase in the scopes of 400 to 600 degree Celsius and electric slurry can be created in the chamber with deposit film on wafer 121.Certainly, film can not have the electricity of generation slurry deposit on wafer 121.After finishing thin film deposition process, other products that remain in unreacting gas and when reaction in the chamber 110 can remove via the pump interface 140 that is disposed at heating block 120 bottoms.Just, during response procedures or after the response procedures, other products during reaction can be stayed on the large scale wafer 121 and unreacting gas is known from experience on heating block 120.Therefore, after response procedures was finished, other products during this reaction and unreacting gas cognition were removed equably with fully.Therefore in the present embodiment, other products during reaction and unreacting gas cognition is drawn to the bottom (that is bottom section of the heating block 120 of placement wafer 121) of chamber 110 so that can be removed equably.Owing to be downwards but not upwards or via sidewall discharge, so can more effectively remove gas.At this moment, other products during reaction and unreacting gas are known from experience via the pre-defined interval between the inwall of heating block 120 and chamber 110 and are expelled to the pump interface 140 that places the bottom of heating block 120.During this time, in the present embodiment, comprise that the circle of a plurality of steam vents 142 and slight inclination flat board can arrange the gas whirlpool phenomenon of bottom to prevent to be taken place to chamber 110 under heating block 120 when gas is discharged.Just, flat board is that to come construction and a plurality of steam vent 142 at two edges with pre-defined curved surface be to be built on the curved surface, so can avoid the whirlpool phenomenon of exhaust.
By the device of pump interface 140 can avoid because of the film that non-homogeneous exhaust caused of deposition gases irregular.
As mentioned above, after other products when unreacting gas and reaction removed, gate valve can be opened and place the wafer of heating block to be taken out and to place to be written into from chamber by barrow and lock.
Use the film of the semiconductor-fabricating device of present embodiment to form temperature gradient that processing procedure can be minimized in decrease of temperature in the chamber and allow reacting gas evenly on whole matrix so that can solve the reacting gas uneven distribution degree of causing problem to improve the uniformity of film.Moreover, equipment regularly with the unscheduled maintenance case in, so owing to use and few preventive maintenance time and cost can fall in small front apron that the gas supply orifice combines, and the personnel of this technology of tool can not finish maintenance easily yet.
Various semiconductive thin films all can use the semiconductor-fabricating device of above-mentioned present embodiment to make.Be used as method below with reference to graphic detailed description manufacturing in order to the nitride film of the cover curtain film that forms the semiconductor element pattern.Below will describe with large scale wafer (300 millimeters).
Fig. 8 illustrates the notion profile that uses semiconductor-fabricating device to make the method for semiconductor element according to the embodiment of the invention.
Shown in Fig. 8 (a), hard cover screen film 220 can form on wafer 210, and is coated with anti-reflection film 230 and light-sensitive surface in regular turn on hard cover screen film 220.Afterwards, light-sensitive surface can be patterned to form light-sensitive surface pattern 240.
Shown in Fig. 8 (b), use sensitization film figure 240 to come patterning hard cover screen film 220.Shown in Fig. 8 (c), use hard cover screen film 220 to carry out etch process with implementation patterning program, that is partly remove wafer 210 as etch mask.Although present embodiment is to describe formation hard cover screen film 220 to come patterned wafer 210, the invention is not restricted to this.Just, hard cover screen film 220 can be used for the processing procedure that all make semiconductor element.
This hard cover screen film 220 can nitride film, sull or its mixture form.This hard cover screen film 220 can be used as etch mask with prevent light-sensitive surface collapse caused below etching etched wafer 210 simultaneously.Therefore, should have high etch-selectivity compared to wafer 210 as the nitride of hard cover screen film 220, and nitride film itself should be harder.In addition, if will use nitride film as etch mask the time then nitride film should under fixed thickness, make.In order to form hard nitride film, nitride should be in the high temperature deposit of 400 to 600 degree Celsius.Moreover, in order on large scale wafer 210, to form uniform thickness and thick nitride film, the nitride gas that forms the nitride film material and be imparted to wafer should be sprayed equably.When if this hard cover screen film 220 is to use in the semiconductor-fabricating device of present embodiment, then can satisfy two above-mentioned conditions.
At this moment, inlay to the blade of AMT mechanical arm and can use the suction (being negative pressure) that produces by rotating flow to lift wafer, wherein this rotating flow be when the gas around blade along the cylinder medial movement of discharge portion and reduce the density of gas thus and produce.Blade can bring to wafer with rubber blanket and contact, and keeps wafer to move thus.
Therefore, because the wafer of distortion can be written under high temperature and take out, wafer breaks or cracked phenomenon so can reduce.Moreover, because the liquid of supply is flatly mobile,, minimize the fraction defective of wafer thus so the pressure that puts on the crystal column surface can be very little.
Comprehensively above-mentioned, blade comprises gas exhaust part, rubber blanket and sensor.Good hole (being gas feed) can be provided at each gas exhaust part so that gas can move and produce rotating flow along the cylindrical inner wall of discharge portion when seeing through this import supply gas.When if rotating flow is very strong, then the density of gas can reduce and produce negative pressure thus.Therefore, wafer can rise in the balance point between the buoyancy that is produced during to the suction of main body and when emission gases in order to mobile wafer.At this moment, this wafer degree of floating is 0.2 millimeter to 0.5 millimeter.Therefore, this wafer can be brought to and contact with outstanding 0.5 millimeter rubber blanket and stop afterwards.The number of gas exhaust part is 4, but can change this number to produce enough suction.Rubber blanket is to be arranged in 9 positions to contact uniformly with wafer therewith, and the frictional force between wafer and rubber blanket can prevent that wafer from getting loose.Rubber blanket is made with hexafluoroization four carbon (Perfluoro), and it is to have good heat-resisting special rubber materials with opposing high temperature.In addition, can use special sticker to be easy to inlay pad in separable mode.
As mentioned above, because wafer is to move in the noncontact mode, so can prevent that wafer from dropping and the foreign material avoiding being produced in the wafer from then on moves to other wafers or the part in device from the mechanical arm blade.In addition, also removable electrostatic charge removes the origin cause of formation that produces foreign material thus.
By using conduction sensor (transmissive sensor) can judge whether to detect the existence of wafer as sensor.Because the detection performance of sensor can be different with processing procedure according to the film quality of wafer, so can use the conduction sensor.When if this blade is installed, then after wafer shifts out chamber, enter and be written into before the lock, wafer can remain in the chamber of cooling.At this moment, because wafer can not move under the state of cooling or distortion fully, so can need not wait until that wafer just carries out the next processing procedure of wafer under cooling off fully.Therefore can reduce the entire process time, it helps productivity.Another advantage is exactly to come cool wafers by the gas that is discharged from the gas exhaust part during moving.
In addition, the program of cleaning according to semiconductor-fabricating device of the present invention of handling below will be described.
In general, if when carrying out thin film deposition process in chamber, film can be deposited on the surface of the interior wall and the shower nozzle of chamber slightly.
When so the difference thermal pressure owing to thermal coefficient of expansion after the down-stream successful execution can be created on the film that is deposited on the shower nozzle.Therefore, the successive process film can partly separate and can produce impurity in film when carrying out.For head it off, electricity consumption slurry generator will be provided via feed tube, baffle plate and shower nozzle and inject cleaning source, electricity slurry generator is to be used as at the top of chamber control electricity to starch the far-end of element with the direct etch processing procedure.This moment, cleaning procedure can be carried out when the outside of two to four heating rods to chamber maintains 100 to 300 degree Celsius than low side by connecting at chamber temp for maximum etch efficient.Therefore, can increase cleaning efficiency, so that can reduce the entire process time and improve productivity.Therefore, can remove the interior wall that remains in chamber and the film of nozzle surface.At this moment, NF
3Can be used as cleaning source gas, and NF
3Electric paste etching also can use this to carry out.
As mentioned above, using the small size baffle plate that combines with the gas supply orifice that reacting gas can be evenly distributed on the shower nozzle and via shower nozzle is infused on the matrix that places heater equably and apace.
Moreover, can minimize reacting gas and arrive matrix institute's time spent to minimize stopping reaction temperature (400 to 600 degree Celsius) the required time via shower nozzle.
Moreover the preventive maintenance time of equipment and cost also can reduce.
In addition, other products during reaction can remove the path of reacting gas and remove easily by changing in order to the bottom via matrix.Therefore, the uniformity of film can be improved by distributing reacting gas equably.
The above, it only is preferred embodiment of the present invention, be not that the present invention is done any pro forma restriction, though the present invention discloses as above with preferred embodiment, yet be not in order to limit the present invention, any those skilled in the art, in not breaking away from the technical solution of the present invention scope, when the technology contents that can utilize above-mentioned announcement is made a little change or is modified to the equivalent embodiment of equivalent variations, in every case be the content that does not break away from technical solution of the present invention, according to technical spirit of the present invention to any simple modification that above embodiment did, equivalent variations and modification all still belong in the scope of technical solution of the present invention.
Claims (14)
1. gas injection system comprises:
Gas supply device, it comprises the gas supply orifice, wherein gas can provide via described gas supply orifice;
Baffle plate, it is to combine with described gas supply orifice and have identical or greater than the size of described gas supply orifice, described baffle plate is the position that places from the pre-defined distance in described gas supply orifice below; And
Shower nozzle, it is disposed at below the described baffle plate and in order to inject described gas equably to chamber.
2. gas injection system as claimed in claim 1, wherein when the size of described gas supply orifice was 1, then the size of described baffle plate was in 1.0 to 10.0 scope.
3. gas injection system as claimed in claim 1, wherein said baffle plate are to see through welding or fixed routine and described gas supply orifice to combine.
4. as each described gas injection system in 3 of the claims 1 to the, wherein said baffle plate can be circular dull and stereotyped, have the dull and stereotyped of taper shape or domed upper surface or have and be formed on the flat board of the irregular figure of its upper surface some at least.
5. gas extraction system, it comprises:
Exhaust unit, it comprises steam vent, wherein gas is to import via described steam vent;
The exhaust guide wire, its gas of discharging in order to the guiding desire is to described steam vent; And
Exhaust pump, it is linked to described exhaust guide wire.
6. gas extraction system as claimed in claim 5, wherein said exhaust unit is a thin plate, has bending or inclined surface on its edge, and a plurality of steam vent is built in described bending or inclined surface.
7. semiconductor-fabricating device, it comprises:
Chamber;
Ejection head unit, it is in order to inject the pre-defined gas that imports via the gas supply orifice to described chamber, described ejection head unit comprises the baffle plate that combines with described gas supply orifice, and described baffle plate has identical or greater than the size of described gas supply orifice and be the position that places from the pre-defined distance in described gas supply orifice below;
The heating block, it is provided at described ejection head unit below to allow wafer placed on it; And
Pump interface, it places described heating block below and provides with a plurality of steam vents.
8. semiconductor-fabricating device as claimed in claim 7, wherein said ejection head unit comprises:
Gas supply device, it comprises the gas supply orifice, wherein gas can provide via described gas supply orifice;
Baffle plate, it is to combine through welding procedure and described gas supply orifice; And
Shower nozzle, it is disposed at described baffle plate below and in order to inject described gas equably to described chamber.
9. as claim 7 or 8 described semiconductor-fabricating devices, wherein when the size of described gas supply orifice is 1, then the size of described baffle plate is in 1.0 to 10.0 scope, and is in 0.1 to 50 scope in the distance of described baffle plate and described gas supply orifice.
10. semiconductor-fabricating device as claimed in claim 7, wherein said pump interface comprises:
Exhaust unit, it is shaped as thin plate, has bending or inclined surface on its edge, and a plurality of steam vent can be built in described bending or inclined surface, and wherein gas is to import via described steam vent;
The exhaust guide wire, its gas of discharging in order to the guiding desire is to described steam vent; And
Exhaust pump, it is linked to described exhaust guide wire.
11. semiconductor-fabricating device as claimed in claim 7, wherein said heating block comprise by the formed heating plate of AIN material and supporter, heating element and temperature-sensitive sticker; And described heating block can be carried out the temperature control in 400 to 600 degree scopes Celsius.
12. semiconductor-fabricating device as claimed in claim 7 more comprises heater, its outside that is provided at described chamber is than low side, and described heater can be at the described chamber of cleaning procedure heating.
13. method of using semiconductor-fabricating device to make semiconductive thin film, wherein said semiconductor-fabricating device comprises chamber, ejection head unit, heating block and pump interface, and described ejection head unit is in order to inject the pre-defined gas that imports via described gas supply orifice to described chamber, described ejection head unit comprises the baffle plate that combines with described gas supply orifice, described baffle plate has identical or greater than the size of this gas supply orifice, described baffle plate is the position that places from the pre-defined distance in described gas supply orifice below, described heating block provides below described ejection head unit to allow wafer placed on it, described pump interface is to place below the described heating block and with a plurality of steam vents to provide, and described method comprises:
Place on the described heating block of described wafer in described chamber and heating afterwards places described wafer on the described heating block;
Provide processing gas to described chamber on described wafer, to form film by seeing through described ejection head unit; And
Remove impurity via described pump interface.
14. use semiconductor-fabricating device as claimed in claim 13 is made the method for semiconductive thin film, temperature and described processing gas that wherein said wafer can be heated to 400 to 600 degree Celsius can come start by the device of electricity slurry.
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| CN2006101382723A CN101179005B (en) | 2006-11-10 | 2006-11-10 | Exhaust air system, semi-conductor manufacturing installation for manufacturing thin film by the same and method thereof |
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| CN2006101382723A CN101179005B (en) | 2006-11-10 | 2006-11-10 | Exhaust air system, semi-conductor manufacturing installation for manufacturing thin film by the same and method thereof |
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| CN101179005B CN101179005B (en) | 2010-10-27 |
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