CN101171691B - 光探测器及其光设备 - Google Patents
光探测器及其光设备 Download PDFInfo
- Publication number
- CN101171691B CN101171691B CN2006800156314A CN200680015631A CN101171691B CN 101171691 B CN101171691 B CN 101171691B CN 2006800156314 A CN2006800156314 A CN 2006800156314A CN 200680015631 A CN200680015631 A CN 200680015631A CN 101171691 B CN101171691 B CN 101171691B
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- Prior art keywords
- photo
- detector
- detection segments
- optoelectronic device
- detectors
- Prior art date
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- 230000003287 optical effect Effects 0.000 title claims description 42
- 238000001514 detection method Methods 0.000 claims abstract description 105
- 230000005693 optoelectronics Effects 0.000 claims abstract description 29
- 238000000576 coating method Methods 0.000 claims description 20
- 239000011248 coating agent Substances 0.000 claims description 19
- 229910052751 metal Inorganic materials 0.000 claims description 15
- 239000002184 metal Substances 0.000 claims description 15
- 230000013011 mating Effects 0.000 claims description 5
- 230000035945 sensitivity Effects 0.000 claims description 5
- 239000000758 substrate Substances 0.000 claims description 5
- 239000000463 material Substances 0.000 claims description 4
- 230000004043 responsiveness Effects 0.000 claims description 3
- 238000012545 processing Methods 0.000 claims description 2
- 238000010586 diagram Methods 0.000 description 10
- 230000004044 response Effects 0.000 description 9
- 238000006073 displacement reaction Methods 0.000 description 8
- 239000011797 cavity material Substances 0.000 description 7
- 230000008859 change Effects 0.000 description 5
- 230000003595 spectral effect Effects 0.000 description 5
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 4
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- 239000011888 foil Substances 0.000 description 3
- 238000012544 monitoring process Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 101100400452 Caenorhabditis elegans map-2 gene Proteins 0.000 description 2
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 2
- KXNLCSXBJCPWGL-UHFFFAOYSA-N [Ga].[As].[In] Chemical compound [Ga].[As].[In] KXNLCSXBJCPWGL-UHFFFAOYSA-N 0.000 description 2
- 230000002349 favourable effect Effects 0.000 description 2
- 238000005286 illumination Methods 0.000 description 2
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- 238000005259 measurement Methods 0.000 description 2
- 101100438536 Nicotiana plumbaginifolia CABC gene Proteins 0.000 description 1
- 206010070834 Sensitisation Diseases 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
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- 230000005622 photoelectricity Effects 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 230000008313 sensitization Effects 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 230000001052 transient effect Effects 0.000 description 1
- 238000011144 upstream manufacturing Methods 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
- H01L31/108—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the Schottky type
- H01L31/1085—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the Schottky type the devices being of the Metal-Semiconductor-Metal [MSM] Schottky barrier type
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J1/00—Photometry, e.g. photographic exposure meter
- G01J1/42—Photometry, e.g. photographic exposure meter using electric radiation detectors
- G01J1/4228—Photometry, e.g. photographic exposure meter using electric radiation detectors arrangements with two or more detectors, e.g. for sensitivity compensation
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J9/00—Measuring optical phase difference; Determining degree of coherence; Measuring optical wavelength
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
- G01P3/00—Measuring linear or angular speed; Measuring differences of linear or angular speeds
- G01P3/64—Devices characterised by the determination of the time taken to traverse a fixed distance
- G01P3/68—Devices characterised by the determination of the time taken to traverse a fixed distance using optical means, i.e. using infrared, visible, or ultraviolet light
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/02016—Circuit arrangements of general character for the devices
- H01L31/02019—Circuit arrangements of general character for the devices for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02024—Position sensitive and lateral effect photodetectors; Quadrant photodiodes
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J1/00—Photometry, e.g. photographic exposure meter
- G01J1/02—Details
- G01J1/04—Optical or mechanical part supplementary adjustable parts
- G01J1/0488—Optical or mechanical part supplementary adjustable parts with spectral filtering
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Light Receiving Elements (AREA)
- Length Measuring Devices By Optical Means (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
HK05108486 | 2005-09-26 | ||
HK05108486.9 | 2005-09-26 | ||
PCT/CN2006/002509 WO2007033610A1 (fr) | 2005-09-26 | 2006-09-25 | Photodetecteurs et dispositifs optiques les comprenant |
Publications (2)
Publication Number | Publication Date |
---|---|
CN101171691A CN101171691A (zh) | 2008-04-30 |
CN101171691B true CN101171691B (zh) | 2010-11-17 |
Family
ID=37888562
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2006800156314A Active CN101171691B (zh) | 2005-09-26 | 2006-09-25 | 光探测器及其光设备 |
Country Status (2)
Country | Link |
---|---|
CN (1) | CN101171691B (fr) |
WO (1) | WO2007033610A1 (fr) |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1042013A (zh) * | 1988-09-28 | 1990-05-09 | 赫彻斯特股份公司 | 光探测器 |
US6376826B1 (en) * | 2000-03-24 | 2002-04-23 | Agilent Technologies, Inc. | Polarity-independent optical receiver and method for fabricating same |
US6552325B1 (en) * | 1999-05-11 | 2003-04-22 | Yokogawa Electric Corporation | Photo diode array |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0624251B2 (ja) * | 1986-01-08 | 1994-03-30 | 富士通株式会社 | 光半導体装置 |
US4772931A (en) * | 1986-07-08 | 1988-09-20 | Ibm Corporation | Interdigitated Schottky barrier photodetector |
JPS63278380A (ja) * | 1987-05-11 | 1988-11-16 | Fujitsu Ltd | 半導体受光装置 |
-
2006
- 2006-09-25 CN CN2006800156314A patent/CN101171691B/zh active Active
- 2006-09-25 WO PCT/CN2006/002509 patent/WO2007033610A1/fr active Application Filing
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1042013A (zh) * | 1988-09-28 | 1990-05-09 | 赫彻斯特股份公司 | 光探测器 |
US6552325B1 (en) * | 1999-05-11 | 2003-04-22 | Yokogawa Electric Corporation | Photo diode array |
US6376826B1 (en) * | 2000-03-24 | 2002-04-23 | Agilent Technologies, Inc. | Polarity-independent optical receiver and method for fabricating same |
Also Published As
Publication number | Publication date |
---|---|
WO2007033610A1 (fr) | 2007-03-29 |
CN101171691A (zh) | 2008-04-30 |
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