CN101170139A - Solar battery and its making method - Google Patents
Solar battery and its making method Download PDFInfo
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- CN101170139A CN101170139A CNA2006101507733A CN200610150773A CN101170139A CN 101170139 A CN101170139 A CN 101170139A CN A2006101507733 A CNA2006101507733 A CN A2006101507733A CN 200610150773 A CN200610150773 A CN 200610150773A CN 101170139 A CN101170139 A CN 101170139A
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Abstract
The invention provides a solar cell and a manufacture method. The solar cell of the inventive embodiment includes a semiconductor structure combination and a multi-layer atomic layer structure formed by at least one oxide. The semiconductor structure combination includes at least one PN junction and an illumination plane. The multi-layer atomic layer structure covers the illumination plane of the semiconductor structure combination. Particularly, the multi-layer atomic layer structure is used as a surface passivation layer and a transparent conducting layer, and further used as an antireflection layer. The multi-layer atomic layer is formed under lower processing temperature, after atomic layer deposition. Therefore, the manufacture method thereof is simpler and will not cause any thermal shock and thermal fracture on the solar cell body.
Description
Technical field
The present invention relates to a kind of solar cell (Solar cell) and manufacture method thereof, and especially, the present invention relates to the solar cell of a kind of covering by the formed multi-layer atomic layer structure of at least a oxide (Oxide) (Multi-atomic-layer), and this multi-layer atomic layer structure is used as surface passivation layer (Surface passivation layer) and transparency conducting layer (Transparent conductive layer), and further, be used as anti-reflecting layer (Anti-reflective layer).
Background technology
Solar cell will be because it will handy power conversion become electric power in light source (for example, sunlight), to control for example calculator, computer, heater ... Deng electronic installation, so solar cell is widely used.
Please refer to Fig. 1, the cross sectional view of the stacked structure of traditional silicon solar cell (Silicon solar cell) 1 its stratiform is depicted among Fig. 1.
This traditional silicon solar cell 1 typically comprises PN junction (PN junction) 13.This PN junction 13 is clipped between p type base material 12 and the n type district 14, and is positioned near shadow surface (front surface) 11 places.Refer to conventional solar cell when being activated or operating at this alleged " shadow surface ", be exposed to the surface under the luminous energy.Therefore, alleged " non-shadow surface " refers to another surface with respect to this shadow surface.
Silicon solar cell 1 shown in Fig. 1, the basic structure of its PN junction 13 comprise medium doped (concentration is about 10
15Cm
-3) p type base material (p) 12, and be positioned on this base material 12 and contiguous this shadow surface 11 heavily doped (concentration is about 10
20Cm
-3) n type district (n
+) 14.Its business-like specific embodiment of traditional solar cell, typically also comprise by oxide (for example, silicon dioxide) and constituted and the n type metal contact layer 17 that covers surface passivation layer (or through coarse grooveization) 15 on the most surfaces in this n type district 14, covers anti-reflecting layer 16 on this surface passivation layer 15, uses as electrode, the P that covers these p type base material 12 surfaces
+Type district 18, and cover this P
+The p type metal contact layer 19 on 18 surfaces, type district.
The PN junction 13 of shallow-layer designs for the collection that helps electronics and hole, and electronics and hole result from the both sides of this PN junction 13.Each photon of light enters silicon substrate 12 and is absorbed by this silicon substrate 12, and giving with the energy that shifts photon was the electronics of bonding state (covalent bond) originally, and to discharge with this be that the electronics of bonding state becomes free electronics originally.This kind be electronics movably, with and the former hole of being left over down (this kind hole also is movably) at the covalent bond place, comprised the potential key element of the electric current that flows out from this solar cell.In order to contribute this electric current, the combination again of above-mentioned electronics and hole, but separated by the electric field relevant with this PN junction 13.If electronics has taken place to separate with the hole, this electronics will move to this n type metal contact layer 17, and this hole can move to this p type metal contact layer 19.
Along with the development of silicon solar cell, its technology that produces photoelectric structure example such as multiple knot (Multi-junction) also continues be studied.Seldom do at this about photoelectric effect structures all types of in the silicon solar cell and to give unnecessary details.Only point out manufacturing surface passivation layer, anti-reflecting layer and electrode (being positioned at the silicon contact at shadow surface place), obviously loaded down with trivial details manufacture method at this.
Therefore, scope of the present invention is the multi-layer atomic layer structure that can apply in the silicon solar cell, and this multi-layer atomic layer structure is used as surface passivation layer and transparency conducting layer, and further, is used as anti-reflecting layer.Especially, compared to prior art, the manufacture method of this multi-layer atomic layer structure is comparatively simplified.
In addition, development along with thin film solar cell, form the manufacture method of each layer in the thin film solar cell, it must reduce thermal shock (Thermal impact) that thin film solar cell the caused possibility with thermal fracture (Thermal crack), to promote the technology qualification rate.
Therefore, another scope of the present invention is promptly that at solar cell particularly thin film solar cell forms the manufacture method of surface passivation layer, transparency conducting layer and anti-reflecting layer, and can not cause thermal shock to solar cell itself.
Summary of the invention
The multi-layer atomic layer structure that comprises semiconductor structure combination and form according to the solar cell of preferred embodiment of the present invention by at least a oxide.This semiconductor structure combination comprises at least one PN junction, and has shadow surface.This multi-layer atomic layer structure covers this shadow surface of this semiconductor structure combination.Especially, this multi-layer atomic layer structure is used as surface passivation layer and transparency conducting layer, and further, is used as anti-reflecting layer.
According to embodiments of the invention, this at least a oxide comprises aluminium oxide.
According to embodiments of the invention, this aluminium oxide is handled through ald, and is formed in this first multi-layer atomic layer structure under for the treatment temperature from room temperature to 400 ℃ in scope.
According to embodiments of the invention, the raw material that this ald of this aluminium oxide is handled adopts TMA precursor and H
2O precursor or O
3Precursor.
According to embodiments of the invention, this alumina deposit also covers on this shadow surface of this semiconductor structure combination to a thickness, so that the function of this surface passivation layer to be provided.
According to embodiments of the invention, this at least a oxide also comprises zinc oxide.
According to embodiments of the invention, this first multi-layer atomic layer structure is considered as the zinc oxide film of adulterated al substantially, the zinc oxide film of this adulterated al has one a zinc atom/al atomic ratio example and deposit thickness, so that the zinc oxide film of this adulterated al provides the function of anti-reflecting layer.
According to embodiments of the invention, this aluminium oxide exists with N layer atomic layer form in the zinc oxide film of this adulterated al, and N is a natural number.
According to embodiments of the invention, this zinc oxide is handled through ald, and is formed in this first multi-layer atomic layer structure under for the treatment temperature from room temperature to 400 ℃ in scope.
According to embodiments of the invention, the raw material that this ald of this zinc oxide is handled adopts DEZn precursor and H
2O precursor or O
3Precursor.
According to embodiments of the invention, this semiconductor structure combination also comprises silicon substrate.
According to embodiments of the invention, this semiconductor structure combination also has the lower surface for the reverse side of this shadow surface, this solar cell further comprises by this at least a oxide and forms and cover the second multi-layer atomic layer structure of lower surface of this semiconductor structure combination and the layer that is reflected that covers this second multi-layer atomic layer structure, and this second multi-layer atomic layer structure promotes this reflectivity of layer to unabsorbed long wavelength's light that be reflected.
According to embodiments of the invention, this shadow surface of this semiconductor structure combination is handled through surface roughening.
The present invention also provides the manufacture method of making solar cell according to a preferred embodiment of the present invention, and this method comprises the following steps: at first, forms semiconductor structure combination.This semiconductor structure combination comprises at least one PN junction, and has shadow surface.Then, this manufacture method forms the multi-layer atomic layer structure of being made up of at least a oxide.This multi-layer atomic layer structure covers this shadow surface of this semiconductor structure combination.Especially, this multi-layer atomic layer structure is used as surface passivation layer and transparency conducting layer, and further, is used as anti-reflecting layer.
According to embodiments of the invention, this at least a oxide comprises aluminium oxide.
According to embodiments of the invention, this aluminium oxide is handled through ald, and is formed in this first multi-layer atomic layer structure under for the treatment temperature from room temperature to 400 ℃ in scope.
According to embodiments of the invention, the raw material that this ald of this aluminium oxide is handled adopts TMA precursor and H
2O precursor or O
3Precursor.
According to embodiments of the invention, this alumina deposit also covers on this shadow surface of this semiconductor structure combination to a thickness, so that the function of this surface passivation layer to be provided.
According to embodiments of the invention, this at least a oxide also comprises zinc oxide.
According to embodiments of the invention, this first multi-layer atomic layer structure is considered as the zinc oxide film of adulterated al substantially, the zinc oxide film of this adulterated al has one a zinc atom/al atomic ratio example and deposit thickness, so that the zinc oxide film of this adulterated al provides the function of anti-reflecting layer.
According to embodiments of the invention, this aluminium oxide exists with N layer atomic layer form in the zinc oxide film of this adulterated al, and N is a natural number.
According to embodiments of the invention, this zinc oxide is handled through ald, and is formed in this first multi-layer atomic layer structure under for the treatment temperature from room temperature to 400 ℃ in scope.
According to embodiments of the invention, the raw material that this ald of this zinc oxide is handled adopts DEZn precursor and H
2O precursor or O
3Precursor.
According to embodiments of the invention, this semiconductor structure combination also comprises silicon substrate.
According to embodiments of the invention, this semiconductor structure combination also has the lower surface for the reverse side of this shadow surface, this method further comprises the lower surface of this semiconductor structure combination is made of and is covered in formation this at least a oxide the step of the second multi-layer atomic layer structure, and the step that forms the layer that is reflected that covers this second multi-layer atomic layer structure, this second multi-layer atomic layer structure promotes this reflectivity of layer to unabsorbed long wavelength's light that be reflected.
According to embodiments of the invention, this shadow surface of this semiconductor structure combination is also handled through surface roughening.
Solar cell provided by the present invention covers the multi-layer atomic layer structure that is formed by at least a oxide.This multi-layer atomic layer structure is used as surface passivation layer and transparency conducting layer, and is used as anti-reflecting layer.This multi-layer atomic layer structure is handled through ald, and forms under the Li Wendu of lower, so its manufacture method is comparatively simple, and can not cause thermal shock and thermal fracture to solar cell itself.
Can be further understood by the following detailed description and accompanying drawings about the advantages and spirit of the present invention.
Description of drawings
Fig. 1 is the cross sectional view of traditional silicon solar cell 1.
Fig. 2 is in order to describe the cross sectional view according to the solar cell 2 of preferred embodiment of the present invention.
Wherein, description of reference numerals is as follows:
1,2: solar cell 11,224: shadow surface
12:p type base material 13,222:PN knot
14:n type district 15: surface passivation layer
16: anti-reflecting layer 17:n type metal contact layer
18:p
+Type district 19:p type metal contact layer
22: semiconductor structure combination 24: the multi-layer atomic layer structure
242: zinc oxide atomic layer 244: the alumina atom layer
226: the reverse side 26 of shadow surface: transparency conducting layer
28: back reflection layer
Embodiment
The invention provides a kind of solar cell and manufacture method thereof, and especially, cover the multi-layer atomic layer structure that forms by at least a oxide according to solar cell of the present invention.This multi-layer atomic layer structure is as the usefulness of surface passivation layer and transparency conducting layer, and further, is used as anti-reflecting layer.This multi-layer atomic layer structure is handled through ald (Atomic layer deposition) and is formed under lower treatment temperature.Thus, the manufacture method of this multi-layer atomic layer structure is comparatively simplified, and can not cause thermal shock and thermal fracture to solar cell itself.Disclose as follows according to preferred embodiment of the present invention.
Please refer to shown in Figure 2ly, Fig. 2 is a cross sectional view, in order to describe solar cell 2 according to a preferred embodiment of the present invention.The multi-layer atomic layer structure 24 that this solar cell 2 comprises semiconductor structure combination 22 and formed by at least a oxide.This semiconductor structure combination 22 comprises at least one PN junction 222, and has shadow surface 224.A PN junction 222 only schematically is shown among Fig. 2.
In specific embodiment, this shadow surface 224 of this semiconductor structure combination 22 is also handled (Surface texturing) through surface roughening, so as to sun reflection of incident light rate is reduced to 10%.
In specific embodiment, this semiconductor structure combination 22 also comprises silicon substrate (Silicon substrate), that is this solar cell 2 is a silicon solar cell.If these silicon solar cell 2 film-type silicon solar cells, the preferred thickness of this silicon substrate then is equal to or less than 300 microns.
As shown in Figure 2, this multi-layer atomic layer structure 24 covers this shadow surface 224 of this semiconductor structure combination 22.Especially, this multi-layer atomic layer structure 24 is as the usefulness of surface passivation layer and transparency conducting layer.
In specific embodiment, this at least a oxide comprises aluminium oxide (Aluminum oxide).In this specific embodiment, this aluminium oxide is handled through ald and is formed in this multi-layer atomic layer structure 24 under the treatment temperature of scope from room temperature to 400 ℃, and cover on this shadow surface 224 of this semiconductor structure combination 22, so that the function of surface passivation layer to be provided.Provide the preferred thickness of the aluminum oxide film of surface passivation layer function to be about 1nm to 10nm.Ald of the present invention is handled, and also have following advantage: (1) can be in the formation of atomic level control material; (2) can control the thickness of film more accurately; (3) but the large tracts of land volume production; (4) the excellent uniformity (Uniformity) is arranged; (5) excellent three-dimensional covering property (Conformality) is arranged; (6) no small holes; (7) defect concentration is little; And (8) depositing temperature is low ..., wait technological advantage.
In specific embodiment, the raw material of being handled by this ald of this aluminium oxide adopts TMA (Trimethylaluminum, Al (CH3) 3) precursor (Precursor) and H
2O precursor or O
3Precursor forms, and wherein TMA is the source of Al, H
2O or O
3Be the source of O.
In specific embodiment, this at least a oxide comprises zinc oxide (Zinc oxide).That is this multi-layer atomic layer structure 24 comprises the zinc oxide film that multilayer forms with the atomic layer form, and mark 242 as shown in Figure 2 is to provide the function of transparency conducting layer.
In above-mentioned specific embodiment, this zinc oxide is handled through ald, and is formed in this multi-layer atomic layer structure 24 under for the treatment temperature from room temperature to 400 ℃ in scope.
In above-mentioned specific embodiment, the raw material of being handled by this ald of this zinc oxide adopts DEZn (Diethylzinc, Zn (C2H5) 2) precursor and H
2O precursor or O
3Precursor forms, and wherein DEZn is the source of Zn, H
2O or O
3, be the source of O.
With the depositing zinc oxide atomic layer is example, and the reactions steps in the cycle of an ald can be divided into four parts:
1. utilize carrier gas with H
2The O molecule imports reaction cavity, H
2The O molecule can be adsorbed in substrate surface after entering cavity, form simple layer OH base at substrate surface, and its aeration time is 0.1 second.
2. feed carrier gas with the unnecessary H that is not adsorbed in base material
2The O molecule is taken away, and its gassing time is 5 seconds.
3. utilize carrier gas that the DEZn molecule is imported in the reaction cavity, with the simple layer OH base that originally is adsorbed on substrate surface, reaction forms the ZnO of simple layer on base material, and accessory substance is an organic molecule, and its aeration time is 0.1 second.
4. feeding carrier gas is taken away the organic molecule accessory substance that unnecessary DEZn molecule and reaction produce, and its gassing time is 5 seconds.
Wherein carrier gas can adopt highly purified argon gas or nitrogen.More than four steps be called cycle of an ald, can on all surfaces of base material, the grow up film of single atomic layer level thickness of the cycle of an ald, this characteristic is called " limitting film forming (self-limiting) certainly ", this characteristic makes ald on the control film thickness, and precision can reach an atomic layer.The cycle times of utilization control ald is the thickness of controlled oxidation zinc accurately.
In order to promote the conductivity of the zinc oxide film that the electrically conducting transparent layer function is provided, in specific embodiment, in forming the zinc oxide film process, and with ald processing formation alumina atom layer interspersedly.That is this aluminium oxide is formed in this multi-layer atomic layer structure 24 with N layer atomic layer form, and N is a natural number.Fig. 2 only illustrates the embodiment that aluminium oxide forms with single atomic layer form, and mark 244 is promptly represented alumina layer among Fig. 2.It should be noted that, embodiment shown in Figure 2, the formation of single alumina atom layer interts at the in-process that forms tens of layers (or hundreds of layer) zinc oxide atomic layer.Thus, mainly in fact can be considered the zinc oxide film (ZnO:Al) of adulterated al, in order to promote the conductivity of zinc oxide film by the multi-layer atomic layer structure 24 that zinc oxide constituted.Compare another kind of common transparent pad and material oxidation indium tin (ITO), at present the electrical conductivity of handling the ZnO:Al transparent conductive film made from ald has reached and on the market the identical level of ITO, penetrance in visible-range is also greater than 85%, depositing temperature is between between room temperature and 400 ℃, so for the slim Silicon Wafer that non-refractory is handled, technique for atomic layer deposition has high compatibility.In addition, the low price of zinc oxide and contain abundant.
Do not have on the surface on the Silicon Wafer of anti-reflecting layer, silicon wafer surface is approximately 30～35% for sun reflection of incident light rate.Surface roughening can make incident light produce double reflection at least, thereby allows reflectivity be reduced to below 10%.If increase anti-reflecting layer on the surface, then reflectivity can be reduced to below 1%.Anti-reflecting layer to reach the minimal reflection coefficient the condition that must satisfy as follows:
Wherein n, n
0With n
sBe respectively the refractive index of anti-reflecting layer, air and base material, d is the thickness of anti-reflecting layer, λ
0Be the incident wave optical wavelength.Confirm that by above-mentioned two formula and actual experiment result if will significantly reduce reflectivity, refractive index and the thickness of accurately controlling the reflector are very important.
Aspect the control of thickness,, therefore can obtain optimized anti-reflecting layer thickness because ald is handled the ability with atom level accuracy control film thickness.Use the solar cell of Silicon Wafer, make the anti-reflecting layer that must can have minimum reflectivity, can calculate the required refractive index of anti-reflecting layer by formula one and should be 1.95 at wavelength 550nm (in the sunlight in the spectrum the strongest wavelength) as base material.Yet, be commonly used in the thin-film material as anti-reflecting layer, do not have a kind of material and have 1.95 refractive index.Utilize technique for atomic layer deposition to address this problem.Utilize technique for atomic layer deposition with the mode of the mixing layer film of growing up, thereby mix high index of refraction material and low-refraction material are staggered, because optical wavelength much larger than the thickness of each layer, therefore can be seen this mixed layer structure and be integral, be considered as having the material of certain specific refractive index.
The ratio that appears at the aluminium atom through the minimum resistivity of experiment confirm ZnO:Al transparent conductive film is 0～10% o'clock, and by chance the refractive index of ZnO:Al just meets the required refractive index of minimum reflectivity very near 1.95 at this moment.At this moment, if with the THICKNESS CONTROL of ZnO:Al transparent conductive film to being the quarter-wave odd-multiple of incident light, this multi-layer atomic layer structure 24 can be reduced to sun reflection of incident light rate below 1% as the usefulness of anti-reflecting layer.
In addition, this solar cell 2 also may comprise and is positioned at on the reverse side 226 of this shadow surface 224 and cover the transparency conducting layer 26 on this surface 226, as shown in Figure 2.This solar cell 2 further comprises the back reflection layer 28 (for example, evaporation one deck Ag or Al) that covers this transparency conducting layer 26, as shown in Figure 2.In specific embodiment, this transparency conducting layer 26 is by formed another multi-layer atomic layer structure of above-mentioned each oxide, for example, and the ZnO of doped with Al (ZnO:Al).Among this embodiment, the ZnO:Al transparent conductive material can reduce the optical absorption that metal electrode causes, and increases the reflectivity of unabsorbed long wavelength's light.In addition, this transparency conducting layer 26 adopts the ZnO:Al transparent conductive material that advantage is arranged on technology, promptly is when forming this multi-layer atomic layer structure 24, also forms this transparency conducting layer 26.This technologic advantage helps this solar cell 2 and adopts batch type (Btach type) production.
Manufacturing at first, forms semiconductor structure combination according to the manufacture method of the solar cell of preferred embodiment of the present invention.This semiconductor structure combination comprises at least one PN junction, and has shadow surface.
Then, manufacturing method according to the invention continues to form the atomic layer of being made up of a kind of oxide on the shadow surface of this semiconductor structure combination, and then forms the multi-layer atomic layer structure of this shadow surface that covers this semiconductor structure combination.This multi-layer atomic layer structure promptly is used as surface passivation layer and transparency conducting layer.
In specific embodiment, the shadow surface of this semiconductor structure combination is also handled through surface roughening.
In specific embodiment, this at least a oxide comprises aluminium oxide.In this specific embodiment, this aluminium oxide is handled through ald, and under the treatment temperature of scope from room temperature to 400 ℃, be formed in this multi-layer atomic layer structure, and cover on this shadow surface of this semiconductor structure combination, so that the function of surface passivation layer to be provided.Provide the preferred thickness of the aluminum oxide film of surface passivation layer function to be about 1nm to 10nm.In this specific embodiment, the raw material of being handled by this ald of this aluminium oxide is to adopt TMA precursor and H
2O precursor or O
3Precursor forms, and wherein TMA is the source of Al, H
2O or O
3Source for O.
In specific embodiment, this at least a oxide comprises zinc oxide.That is this multi-layer atomic layer structure comprises the zinc oxide film that multilayer forms with the atomic layer form, so that the function of transparency conducting layer to be provided.In this specific embodiment, this zinc oxide is handled through ald, and is formed in this multi-layer atomic layer structure under the treatment temperature of scope from room temperature to 400 ℃.
In above-mentioned specific embodiment, the raw material that this ald of this zinc oxide is handled adopts DEZn precursor and H
2O precursor or O
3Precursor forms, and wherein DEZn is the source of Zn, H
2O or O
3Source for O.
In order to promote main conductivity by the multi-layer atomic layer structure that zinc oxide constituted, manufacturing method according to the invention, further intert the operation that forms N layer atomic layer aluminium oxide in the operation that forms tens of layers (or hundreds of layer) zinc oxide atomic layers, N is a natural number.Thus, mainly in fact can be considered the zinc oxide film (ZnO:Al) of adulterated al, to promote the conductivity of zinc oxide film by the multi-layer atomic layer structure that zinc oxide constituted.The ratio of aluminium atom is 0～10% o'clock in the control ZnO:Al transparent conductive film, and the resistivity of ZnO:Al transparent conductive film then is minimum.And the refractive index of ZnO:Al is very near 1.95.At this moment, if with the THICKNESS CONTROL of ZnO:Al transparent conductive film to being the quarter-wave odd-multiple of incident light, this multi-layer atomic layer structure can be used as anti-reflecting layer, sun reflection of incident light rate can be reduced to below 1%.
Because zinc oxide atomic layer and alumina atom layer are all handled by ald and are formed, therefore, prepare semiconductor structure combination and insert design as in the reactive tank (Reaction chamber) of carrying out the ald processing, need not change to the prerequisite of other processing reaction groove, this multi-layer atomic layer structure that is used as surface passivation layer, transparency conducting layer and anti-reflecting layer can be finished all and handle in single reactive tank, comprise to form a plurality of zinc oxide atomic layers and interspersed alumina atom layer.
In addition, the control ald is handled under the temperature range between the room temperature to 400 ℃ and is carried out, and in the process that forms these a plurality of atomic layers, this semiconductor structure combination will can not be subjected to thermal shock and thermal fracture.Significantly, the manufacturing method according to the invention utmost point is beneficial to the manufacturing that is applied in thin film solar cell.
In specific embodiment, manufacturing method according to the invention further forms transparency conducting layer on the reverse side of the shadow surface of this semiconductor structure combination.Further, manufacturing method according to the invention forms back reflection layer on the surface of this second transparency conducting layer.This transparency conducting layer can be for by formed another multi-layer atomic layer structure of above-mentioned each oxide, for example, and the ZnO of doped with Al (ZnO:Al).
By the above detailed description of preferred embodiments, hope can be known description feature of the present invention and spirit more, and is not to come scope of the present invention is limited with the above-mentioned preferred embodiment that is disclosed.On the contrary, its objective is that hope can contain in the protection range that is arranged in claim of the present invention of various changes and tool equality.
Claims (26)
1. solar cell comprises:
Semiconductor structure combination, this semiconductor structure combination comprise at least one PN junction and have shadow surface; And
By the formed first multi-layer atomic layer structure of at least a oxide, this first multi-layer atomic layer structure covers this shadow surface of this semiconductor structure combination, and wherein this first multi-layer atomic layer structure is used as the surface passivation layer and first transparency conducting layer.
2. solar cell as claimed in claim 1, wherein this at least a oxide comprises aluminium oxide.
3. solar cell as claimed in claim 2, wherein this aluminium oxide is handled through ald and is formed in this first multi-layer atomic layer structure under for the treatment temperature from room temperature to 400 ℃ in scope.
4. solar cell as claimed in claim 3, wherein the raw material of this ald processing of this aluminium oxide adopts TMA precursor and H
2O precursor or O
3Precursor.
5. solar cell as claimed in claim 3, wherein this alumina deposit and covering on this shadow surface of this semiconductor structure combination to a thickness, so that the function of this surface passivation layer to be provided.
6. solar cell as claimed in claim 5, wherein this at least a oxide also comprises zinc oxide.
7. solar cell as claimed in claim 6, wherein this first multi-layer atomic layer structure is considered as the zinc oxide film of adulterated al substantially, the zinc oxide film of this adulterated al has one a zinc atom/al atomic ratio example and deposit thickness, so that the zinc oxide film of this adulterated al provides the function of anti-reflecting layer.
8. solar cell as claimed in claim 7, wherein this aluminium oxide exists with N layer atomic layer form in the zinc oxide film of this adulterated al, and N is a natural number.
9. solar cell as claimed in claim 6, wherein this zinc oxide is handled through ald, and is formed in this first multi-layer atomic layer structure under for the treatment temperature from room temperature to 400 ℃ in scope.
10. solar cell as claimed in claim 9, wherein the raw material of this ald processing of this zinc oxide adopts DEZn precursor and H
2O precursor or O
3Precursor.
11. solar cell as claimed in claim 1, wherein this semiconductor structure combination also comprises silicon substrate.
12. solar cell as claimed in claim 1, wherein this semiconductor structure combination also has the lower surface for the reverse side of this shadow surface, this solar cell further comprises by this at least a oxide and forms and cover the second multi-layer atomic layer structure of lower surface of this semiconductor structure combination and the layer that is reflected that covers this second multi-layer atomic layer structure, and this second multi-layer atomic layer structure promotes this reflectivity of layer to unabsorbed long wavelength's light that be reflected.
13. solar cell as claimed in claim 1, wherein this shadow surface of this semiconductor structure combination is handled through surface roughening.
14. a method of making solar cell, this method comprises the following step:
Form semiconductor structure combination, this semiconductor structure combination comprises at least one PN junction and has shadow surface; And
The first multi-layer atomic layer structure that formation is made up of at least a oxide, this first multi-layer atomic layer structure covers this shadow surface of this semiconductor structure combination, and wherein this multi-layer atomic layer structure is used as the surface passivation layer and first transparency conducting layer.
15. method as claimed in claim 14, wherein this at least a oxide comprises aluminium oxide.
16. method as claimed in claim 15, wherein this aluminium oxide is handled through ald, and is formed in this first multi-layer atomic layer structure under for the treatment temperature from room temperature to 400 ℃ in scope.
17. method as claimed in claim 16, wherein the raw material of this ald processing of this aluminium oxide adopts TMA precursor and H
2O precursor or O
3Precursor.
18. method as claimed in claim 16, wherein this alumina deposit and covering on this shadow surface of this semiconductor structure combination to a thickness, so that the function of this surface passivation layer to be provided.
19. method as claimed in claim 18, wherein this at least a oxide also comprises zinc oxide.
20. method as claimed in claim 19, wherein this first multi-layer atomic layer structure is considered as the zinc oxide film of adulterated al substantially, the zinc oxide film of this adulterated al has one zinc atom/al atomic ratio example and deposit thickness, so that the zinc oxide film of this adulterated al provides the function of anti-reflecting layer.
21. method as claimed in claim 20, wherein this aluminium oxide exists with N layer atomic layer form in the zinc oxide film of this adulterated al, and N is a natural number.
22. method as claimed in claim 19, wherein this zinc oxide is handled through ald, and is formed in this first multi-layer atomic layer structure under for the treatment temperature from room temperature to 400 ℃ in scope.
23. method as claimed in claim 22, wherein the raw material of this ald processing of this zinc oxide adopts DEZn precursor and H
2O precursor or O
3Precursor.
24. method as claimed in claim 14, wherein this semiconductor structure combination also comprises silicon substrate.
25. method as claimed in claim 14, wherein this semiconductor structure combination also has the lower surface for the reverse side of this shadow surface, this method further comprises the lower surface of this semiconductor structure combination is made of and is covered in formation this at least a oxide the step of the second multi-layer atomic layer structure, and the step that forms the layer that is reflected that covers this second multi-layer atomic layer structure, this second multi-layer atomic layer structure promotes this reflectivity of layer to unabsorbed long wavelength's light that be reflected.
26. method as claimed in claim 14, wherein this shadow surface of this semiconductor structure combination is also handled through surface roughening.
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| CN2006101507733A CN101170139B (en) | 2006-10-26 | 2006-10-26 | Solar battery and its making method |
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| CN103390675A (en) * | 2012-05-09 | 2013-11-13 | 上海太阳能工程技术研究中心有限公司 | Crystalline silicon solar cell and manufacturing method thereof |
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