CN101165597A - Bi-directional beam divider, aligning system using same and lithography device using the system - Google Patents
Bi-directional beam divider, aligning system using same and lithography device using the system Download PDFInfo
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- CN101165597A CN101165597A CNA200710046957XA CN200710046957A CN101165597A CN 101165597 A CN101165597 A CN 101165597A CN A200710046957X A CNA200710046957X A CN A200710046957XA CN 200710046957 A CN200710046957 A CN 200710046957A CN 101165597 A CN101165597 A CN 101165597A
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Abstract
After the modulation of reference grating, the light intemsity variation of diffracted light coherent imaging in +-1 stage of the alignment mark is detected at image surface; meanwhile at the pupil surface, the variation of interference signal intensity in each stage being coherent and stacking with the positive, negative diffracted light spot in same stage with the high stage diffracted light of the alignment light is detected. The generated signals have high process versatility, high sensitivity and high S/N ratio.
Description
Technical field
The present invention is relevant with the lithographic equipment that integrated circuit or other microdevice are made the field, particularly a kind of technique of alignment and lithographic equipment.
Background technology
Lithographic equipment is mainly used in the manufacturing of integrated circuit (IC) or other microdevices.By lithographic equipment, the multilayer mask with different mask patterns is imaged on the wafer that is coated with photoresist under accurately aiming at successively.Two kinds of lithographic equipments are arranged at present, one class is the stepping lithographic equipment, the mask pattern single exposure is imaged on an exposure area of wafer, wafer moves with respect to mask subsequently, next exposure area is moved to mask pattern and projection objective below, again mask pattern is exposed in another exposure area of wafer, repeat the picture that this process all exposure areas on wafer all have mask pattern.Another kind of is the step-scan lithographic equipment, and in said process, mask pattern is not the single exposure imaging, but the scanning mobile imaging by the projection light field.In the mask pattern imaging process, mask and wafer move with respect to optical projection system and projected light beam simultaneously.
In the semiconductor fabrication process, correctly to transfer on the wafer for making mask pattern, critical step is with mask and wafer aligned, promptly calculates the position of mask with respect to wafer, to satisfy the requirement of alignment precision.When characteristic dimension " CD " requires more hour, the requirement of alignment precision " Overlay " and consequent requirement to alignment precision are become strict more.Prior art has two kinds of alignment scheme, and a kind of is the TTL coaxial alignment technology that sees through camera lens, and another kind is an OA off-axis alignment technology.Before carrying out resist exposure each time, need to use alignment mark to carry out mask-wafer aligned.In the off-axis alignment technology, the whole audience alignment mark or marking groove (scribe line) alignment mark that will be positioned at territory, wafer non-exposed area are imaged onto on the reference plate, by determining the deviation of alignment mark position, carry out wafer exposure field and mask pattern location with respect to the reference marker that is in ideal position.
At present, the most alignment so that adopts of main flow lithographic equipment is a grating alignment.Grating alignment is meant that illumination beam on the grating type alignment mark diffraction takes place, and diffraction light carries the full detail about alignment mark structure.The multilevel diffraction light scatters from the phase alignment grating with different angles, after filtering zero order light by spatial filter, gather diffraction light ± 1 order diffraction light, the perhaps raising that requires along with CD, gather multi-level diffraction light (comprising senior) simultaneously at the reference surface interference imaging, survey and signal Processing through photodetector, determine the centering adjustment position.
A kind of situation of prior art is (referring to Chinese invention patent, application number: CN03164859.2, denomination of invention: the alignment system and the method that are used for etching system), the ATHENA of off-axis alignment system of a kind of 4f system architecture that Dutch ASML company is adopted is referring to Fig. 1 (a)～Fig. 1 (g).Although can partly suppress the signal attenuation influence that destructive interference causes by the dual wavelength illumination; Senior diffraction light of snoop tag also can reduce the influence of alignment mark asymmetrical deformation.But, owing to only used the LASER Light Source of two kinds of visible wavelengths, in fact to eliminate the problem of signal attenuation that destructive interference causes fully and need to adopt 4-5 illumination wavelengths at least, and the dielectric material of low k value can cause the decay of registration signal intensity in the absorption of limit of visible spectrum, thereby influences alignment precision.In addition, adopt voussoir array or wedge to make up separation and the coherent imaging of realizing multi-level diffraction light.The face type and the angle of wedge coherence request of two voussoirs that the positive and negative same stages of birefringence is inferior are very high; And the requirement of the processing and manufacturing of wedge group, assembling and adjustment is also very high, and the specific implementation engineering difficulty of getting up is bigger, costs dearly.
Adopt senior diffraction light enhancement mode grating marker of many segmentations, can improve alignment precision, enhanced process adaptability.But, this senior diffraction light enhancement mode alignment mark SPM-AH32, SPM-AH53, SPM-AH74 with periodicity sub-structure can only realize the enhancing of a high order diffraction level time light intensity simultaneously, though the VSPM mark can be realized 3 grades, 5 grades and the enhancing of 7 order diffraction light simultaneously, but label size is excessive, has taken more marking groove area.
Summary of the invention
The object of the present invention is to provide a kind of bi-directional beam divider of the alignment system of lithographic equipment, lithographic equipment that uses the alignment system of this beam splitter and use this system of being used for, to realize the aligning of litho machine.
To achieve the above object, the invention provides a kind of bi-directional beam divider that is used for the alignment system of lithographic equipment, it comprises reflector space and regional transmission, and this reflector space reflects incident light fully, and this regional transmission sees through incident light fully.
The distribution of this reflector space and regional transmission can be that zone line is a regional transmission, and two side areas is a reflector space, also can be that zone line is a reflector space, and two side areas is a regional transmission.This regional transmission and reflector space can be by realizing beam-splitting surface subregion plated film.This regional transmission also can be to remove corresponding beam splitter material to form through hole, allows light beam directly see through.The multilevel diffraction light of the orthogonal both direction that this incident light that reflects fully and this incident light that sees through fully are respectively the grating type alignment marks.
The present invention also provides a kind of alignment system that uses this bi-directional beam divider, comprising: light source module; Lighting module; The image-forming module that comprises object lens, first imaging optical path, second imaging optical path; Comprise that first surveys detecting module and signal Processing and the locating module that light path, second is surveyed light path.
This light source module is provided for the illuminating bundle of alignment system; This illuminating bundle is by this lighting module transmission, illumination alignment mark; The object lens of this image-forming module are collected the reflected light and the diffraction light of this alignment mark, and are transferred to this first imaging optical path and second imaging optical path respectively to this alignment mark imaging; This first detection light path is surveyed this first imaging optical path imaging and is obtained first light signal, and this second detection light path is surveyed this second imaging optical path imaging and obtained second light signal; This signal Processing and locating module are handled first light signal and second light signal, and determine the positional information of alignment mark according to the phase information of first light signal and second light signal.
This second imaging optical path comprises this bi-directional beam divider, and this bi-directional beam divider sees through this alignment mark diffraction light in one direction, the diffraction light of the diffraction light vertical direction of reflection and this direction fully fully.
This alignment mark is the alignment mark that includes senior diffraction light enhancement mode grating, and this senior diffraction light enhancement mode grating is to suppress zero level and the inferior diffraction light energy of even level, strengthens the grating of the inferior diffraction light light intensity of a plurality of odd levels simultaneously.
This illuminating bundle is the multi-wavelength illuminating bundle, comprises the laser beam of four discrete wavelength, has two wavelength at least near infrared or infrared band in these four discrete wavelength.
This light source module uses laser instrument, and this laser instrument can be gas laser, can be solid state laser, can be semiconductor laser, can also be fiber laser.
Comprise the Flattened Gaussian Beams integer type device in this light source module.
This illuminating bundle that shines on the wafer is a circularly polarized light.
This alignment mark ± 1 order diffraction light is at the first imaging optical path coherent imaging of this image-forming module.
The positive and negative order diffraction hot spot of the same stages of senior diffraction light of this alignment mark time is corresponding overlapping relevant at second imaging optical path of this image-forming module.
This second imaging optical path comprises two levels in conjunction with interferometer, makes inferior corresponding overlapping being concerned with of positive and negative order diffraction hot spot of same stages of senior diffraction light of alignment mark.
Two levels are made up of level coupling system and analyzer in conjunction with interferometer.This grade coupling system can be a coordinate inverting interferometer, can be prism interferometer, can be lateral shearing interferometer, can also be the level coupling system of diffraction grating.
This image-forming module comprises the polychromatic light piece-rate system.This polychromatic light piece-rate system can be to use the beam splitting system of dispersion element, can be to use the beam splitting system of dichroism element, can also be to use the beam splitting system of diffraction optical element.
This first detection light path links to each other with this first imaging optical path, and the transmitted light intensity that detection alignment mark picture passes through after the reference Grating Modulation that is positioned at the first imaging optical path image planes changes, and obtains this first light signal.This second detection light path links to each other with this second imaging optical path, and the light intensity of overlapping relevant high order order diffraction hot spot in the corresponding position of pupil plane of surveying alignment mark changes, and obtains this second light signal.This image-forming module can also comprise the 3rd imaging optical path, and the detecting module that is somebody's turn to do can also comprise the 3rd and survey light path, and the 3rd imaging optical path directly images in this alignment mark the CCD camera of the 3rd detection light path.
The present invention also provides a kind of lithographic equipment that uses this alignment system, comprising: illuminator, mask holder, mask platform, projection optical system, chip support, wafer station, this alignment system, coaxial alignment unit, catoptron and laser interferometer, servo-drive system and drive system and master control system.
This illuminator transmission exposing light beam; This mask holder and mask platform support this mask; The alignment mark that mask pattern is arranged on this mask and have periodic structure; This projection optical system projects to the mask pattern on this mask on this wafer; This chip support and wafer station support this wafer; The datum plate that contains reference mark is arranged on this wafer station; Alignment mark with periodicity optical structure is arranged on this wafer; This alignment system is arranged between this mask platform and this wafer station; This coaxial alignment unit is used for mask registration; The position of this mask platform of this catoptron and laser interferometer measurement and wafer station; This mask platform of this servo-drive system and drive systems and wafer station move; This servo-drive system and drive system are by this master control system control; This alignment mark is the alignment mark that includes senior diffraction light enhancement mode grating, and this senior diffraction light enhancement mode grating can strengthen the inferior light intensity of an above order of diffraction simultaneously.
The bi-directional beam divider of the alignment system of lithographic equipment, the lithographic equipment that uses the alignment system of this beam splitter and use this system of being used for provided by the present invention, by survey in image planes alignment mark ± light intensity of 1 order diffraction light coherent imaging after the reference Grating Modulation, obtain the coarse position information of alignment mark by the phase information of optical signal transmissive; Survey the inferior overlapping at different levels times relevant interference signal Strength Changes of positive and negative order diffraction hot spot of same stages of senior diffraction light of alignment mark simultaneously at pupil plane, obtain the precise position information of alignment mark according to the phase information of the signal that changes with different frequency.This alignment system can produce the registration signal with strong Technological adaptability, high sensitivity and high s/n ratio, alignment system repeatability precision height.Employing is based on a bi-directional beam divider and two levels positive and negative level time overlapping coherent system structure of diffraction pattern and the principle in conjunction with interferometer, on the one hand, by using bi-directional beam divider to make the multilevel diffraction pattern of two vertical direction of alignment mark separate fully under the situation of energy loss not having, improved the signal to noise ratio (S/N ratio) of registration signal; Make that on the other hand the multilevel diffraction light of two vertical direction is overlapping respectively, relevant, and surveying light path separates fully, effectively reduce level in conjunction with the design of interferometer, the difficulty of processing and debuging, help reducing cost, improve the stability and the repeatability precision of system.
Description of drawings
Fig. 1 (a) is two laser multi-level diffraction light grid off-axis alignments (ATHENA) alignment system synoptic diagram of prior art to Fig. 1 (g);
Fig. 2 is the alignment system of lithographic equipment of the present invention and the total arrangement between the lithographic equipment, principle of work structural representation;
Fig. 3 (a) is the synoptic diagram of wafer alignment marks to Fig. 3 (b);
Fig. 4 is an alignment system structural representation of the present invention;
Fig. 5 is the beam-splitting surface synoptic diagram of bi-directional beam divider of the present invention;
Fig. 6 is basic structure and the principle schematic of a kind of level of the present invention in conjunction with interferometer;
In the accompanying drawing; 1, illuminator; 2, mask; 3, mask platform; 4, projection optical system; 5, from the shaft type alignment system; 6, wafer; 7, wafer station; 8, datum plate; 9, drive system; 10, catoptron; 11, laser interferometer; 12, master control system; 13, servo-drive system; 14, drive system; 15, laser interferometer; 16, catoptron; 61, first grating of marking groove mark; 62, second grating of marking groove mark; 63, the cross figure of marking groove mark; 73, the cross curve of four-quadrant mark; 71, first grating of four-quadrant mark; 72, second grating of four-quadrant mark; 74, the 3rd grating of four-quadrant mark; 75, the 4th grating of four-quadrant mark; 76, senior diffraction light enhancement mode sub-structure of the aperiodicity of four-quadrant mark modulation; 77, senior diffraction light enhancement mode sub-structure of the aperiodicity of four-quadrant mark modulation; 501, single-mode polarization maintaining fiber; 502, fiber coupler; 503, bundling device; 504, single-mode polarization maintaining fiber; 505, lens; 506, illuminating aperture diaphragm; 507, lens; 508, flat board; 508a, small reflector; 509, λ/4 wave plates; 510, object lens; 511, flat board; 511a, catoptron; 512, spatial filter; 513, polychromatic light piece-rate system; 514, lens; 515, with reference to grating; 516, bi-directional beam divider; 516a, beam-splitting surface; 517, spatial filter; 518, level is in conjunction with interferometer; 519, polychromatic light piece-rate system; 521, spatial filter; 520a, detector; 520b, detector; 520c, detector; 520d, detector; 522, level is in conjunction with interferometer; 523, polychromatic light piece-rate system; 524a, detector; 524b, detector; 524c, detector; 524d, detector; 525, Transmission Fibers; 526, photodetector; 70, ruddiness; 70 ', green glow; 800, optical path difference compensator; 801, right-angle prism; 801a, reflecting surface; 802, right-angle prism; 802a, cemented surface; 803, achromatism λ/4 wave plates; 804, catoptron; 805, analyzer; 90, detector; 91, detector; 92, detector; 93, detector; 94, detector; 95, detector; 96, detector; 90 ', detector; 91 ', detector; 92 ', detector; 93 ', detector; 94 ', detector; 95 ', detector; 96 ', detector; RM, alignment mark; FM, reference mark; WM, alignment mark; IL, exposing light beam; WEP, voussoir array or wedge group; WEP ', voussoir array or wedge group; RGP, reference plate; RGP ', reference plate.
Embodiment
Below in conjunction with accompanying drawing the specific embodiment of the present invention is further described.
Fig. 1 (a) shows two laser multi-level diffraction light grid off-axis alignments (ATHENA) alignment system synoptic diagram of prior art to Fig. 1 (g).Wherein, Fig. 1 (a) shows two laser multi-level diffraction light grid off-axis alignments (ATHENA) alignment system structural representation of prior art, and Fig. 1 (b) shows two laser multi-level diffraction light grid off-axis alignments (ATHENA) alignment system principle schematic of prior art.This alignment system adopts ruddiness 70, the irradiation of green glow 70 ' double laser light source at the Lights section; Optical system structure is the 4f system, and adopts the voussoir array or the wedge group WEP that are positioned at frequency plane to realize separating of alignment mark time diffraction light not at the same level with WEP ', at image planes difference coherent imaging; By detector array 90-96 and 90 '-96 ', see through reference plate RGP and the upward corresponding transmitted light intensity of RGP ' after surveying alignment mark multilevel diffraction light coherent imaging with reference to grating, obtain the registration signal of sinusoidal output, obtain the center of alignment mark by the phase information of the signal of different frequency.Fig. 1 (c) shows the SPM mark synoptic diagram of two laser multi-level diffraction light grid off-axis alignments (ATHENA) alignment system that is used for prior art.The SPM mark comprises grating 111,112 and ccd image coarse alignment mark 113,111 cycles of grating are 16um, and 112 cycles of grating are 17.6um, to being used for two groups of gratings that same direction is aimed at, select the different grating cycles can improve the capture range of aligning, capture range is expressed as ± P
1P
2/ [2 (P
1-P
2)].Because senior diffraction light diffraction efficiency of SPM mark is lower, therefore SPM-AH32, SPM-AH53, SPM-AH74 and the VSPM etc. that have proposed again on the SPM basis shown in Fig. 1 (d), Fig. 1 (e), Fig. 1 (f) and Fig. 1 (g) contain the periodically enhancement mode mark of enhancement mode sub-structure, by being carried out the n level, periodically segments in the basic grating cycle, the n order diffraction level time light intensity of basic grating is enhanced, thereby improves the alignment precision and the Technological adaptability of lithographic equipment.As shown in the figure, in being semiperiod of grating 121, grating 131 and grating 141 of 16um, the cycle carries out 3 grades, 5 grades and 7 grades of uniform subdivision respectively, sub-structure shown in 123,133 and 143, strengthens 3 grades, 5 grades and 7 order diffraction light of grating 121, grating 131 and grating 141 respectively respectively by sub-structure 123,133 and 143; The cycle of grating 122, grating 132 and grating 142 is 17.6um, as catching grating.The VSPM mark is the mark of one 4 segmentation, and the cycle of grating 151, grating 152 and grating 153 is 16um, is respectively 3 grades, 5 grades and 7 order diffraction light enhancement mode gratings; Grating 154 also is 3 order diffraction light enhancement mode gratings, and the cycle is 17.6um, is used to catch.
Fig. 2 shows the alignment system of lithographic equipment of the present invention and the total arrangement between the lithographic equipment, principle of work structural representation.The formation of lithographic equipment comprises: the illuminator 1 that is used to provide exposing light beam; Be used to support the mask holder and the mask platform 3 of mask 2, the alignment mark RM that mask pattern is arranged on the mask 2 and have periodic structure; Be used for the mask pattern on the mask 2 is projected to the projection optical system 4 of wafer 6; Be used for the chip support and the wafer station 7 of supporting wafer 6, the datum plate 8 that is carved with reference mark FM is arranged on the wafer station 7, the alignment mark WM of periodicity optical structure is arranged on the wafer 6; Be used for mask and wafer aligned from shaft type alignment system 5; The catoptron 10,16 and the laser interferometer 11,15 that are used for mask platform 3 and wafer station 7 position measurements, and by the mask platform 3 of master control system 12 controls and the servo-drive system 13 and the drive system 9,14 of wafer station 7 displacements.
Wherein, illuminator 1 comprises that a light source, one make the lens combination of illumination homogenising, catoptron, a condenser (all not shown among the figure).As a light source cell, adopt KrF excimer laser (wavelength 248nm), ArF excimer laser (wavelength 193nm), F2 laser instrument (wavelength 157nm), Kr2 laser instrument (wavelength 146nm), Ar2 laser instrument (wavelength 126nm) or use ultrahigh pressure mercury lamp (g-line, i-line) etc.The exposing light beam IL of illuminator 1 uniform irradiation is radiated on the mask 2, includes the mark RM of mask pattern and periodic structure on the mask 2, is used for mask registration.Mask platform 3 can move in perpendicular to the X-Y plane of illuminator optical axis (overlapping with the optical axis AX of projection objective) through drive system 14, and moves with specific sweep velocity in predetermined direction of scanning (being parallel to X-direction).The position of mask platform 3 in plane of motion recorded by Doppler's two-frequency laser interferometer 15 precisions by the catoptron 16 that is positioned on the mask platform 3.The positional information of mask platform 3 sends to master control system 12 by laser interferometer 15 through servo-drive system 13, and master control system 12 drives mask platform 3 according to the positional information of mask platform 3 by drive system 14.
Projection optical system 4 (projection objective) is positioned at mask platform shown in Figure 13 belows, and its optical axis AX is parallel to Z-direction.Since adopt two core structures far away and have predetermined scale down as 1/5 or 1/4 refraction type or refractive and reflective optical system as projection optical system, so when the mask pattern on the exposing light beam illuminating mask 2 of illuminator 1 emission, the image that the circuit mask pattern becomes to dwindle on the wafer 6 that is coated with photoresist through projection optical system.
Wafer 6 is provided with the alignment mark WM of periodic structure, and the datum plate 8 that comprises reference mark FM is arranged on the wafer station 7, and alignment system 5 realizes that by wafer alignment marks WM and reference mark FM wafer 6 is aimed at and wafer station 7 is aimed at respectively.In addition, coaxial alignment unit (not shown) is aimed at the reference mark FM of datum plate on the wafer station 8 with mask alignment mark RM, realizes mask registration.The alignment information of alignment system 5 is transferred to master control system 12 together in conjunction with the alignment information of coaxial alignment unit, and after data processing, drive system 9 drives wafer station 7 and moves the aligning of realizing mask and wafer 6.
Fig. 3 shows the synoptic diagram of wafer alignment marks.Specifically can be referring to Chinese invention patent: 1. " a kind of alignment mark and manufacture method thereof ", publication number: CN1936710A; 2. " alignment mark structure that is used for wafer aligned ", publication number: CN1963679A.
Fig. 3 (a) shows marking groove mark synoptic diagram, and this alignment mark is phase grating structure (only provided the alignment mark of x direction among the figure, the alignment mark of y direction is similar), comprises first grating 61, second grating 62 and cross figure 63.The cycle of first grating 61 is different with the basic cycle of second grating 62 and be distributed in the both sides of cross figure 63 respectively.Grating 61 and 62 all is used for same direction (x or y direction) and aims at.First grating 61 is that the basic grating cycle is P
1Senior diffraction light enhancement mode grating, basic cycle P1 (shown in amplifier section among the figure) is senior diffraction light enhancement mode sub-structure 64 of aperiodicity modulation.For example, as shown in Fig. 3 (a), first grating 61 can be ± 1, ± 3, ± 5 and ± 7 grades senior diffraction light enhancement mode grating, strengthen ± 1 simultaneously, ± 3, ± 5 and ± 7 grades diffraction light.At a basic grating cycle P
1In 10 modulation point are arranged, carry out normalized modulation point position with the cycle and be respectively 0,0.1812,0.2956,0.3282,0.4392,0.5,0.6812,0.7956,0.8282,0.9392, the array of the diffraction pattern 1 * 8 of multilevel, suppressed even level time diffraction pattern, make simultaneously ± 1 grade, ± 3 grades, ± 5 grades of light intensity with ± 7 grades diffraction pattern are enhanced.62 basic cycles of second grating are P
2,, make capture range be as capture of labels: ± P by selecting the different grating cycles can improve the capture range of aligning to two groups of gratings that are used for same direction aligning
1P
2/ [2 (P
1-P
2)].Second grating 62 can be 1 grade of capture of labels, also can be 3 grades or 5 grades of capture of labels.Equally, second grating 62 also can be senior the diffraction light enhancement mode grating that comprises acyclic senior diffraction light enhancement mode sub-structure.
Fig. 3 (b) shows four-quadrant mark synoptic diagram, and this alignment mark is the phase grating structure.The cross curve 73 that is positioned at whole alignment mark central authorities is used for the video monitoring.First grating 71, second grating 72, the 3rd grating 74 and the 4th grating 75 are that arrange along x and y direction mutual dislocation at the center with cross curve 73, two groups of optical grating constructions of Fen Buing are used for same direction aligning in opposite directions, promptly first grating 71 and the 3rd grating 74 are used for x direction aligning, and second grating 72 and the 4th grating 75 are used for the y direction and aim at.Second grating 72 and the 3rd grating 74 are that the basic grating cycle is P
1Diffraction grating, the basic cycle P of second grating 72
1(shown in amplifier section among the figure) is senior diffraction light enhancement mode sub-structure 77 of aperiodicity modulation, the basic cycle P of grating 74
1Senior diffraction light enhancement mode sub-structure 76 for the aperiodicity modulation; As capture of labels, the basic grating cycle of first grating 71 and the 4th grating 75 is P
2, capture range is: ± P
1P
2/ [2 (P
1-P
2)].Equally, first grating 71 and the 4th grating 75 also can be senior the diffraction light enhancement mode gratings that comprises acyclic senior diffraction light enhancement mode sub-structure.
With respect to the formerly SPM described in the technology, SPM-AH32, SPM-AH-53, SPM-AH-74 and VSPM mark, senior diffraction light enhancement mode alignment mark with senior diffraction light enhancement mode sub-structure of aperiodicity modulation of the present invention, can suppress the inferior diffraction light energy of zero level and even level, can strengthen the inferior diffraction light light intensity of a plurality of odd levels simultaneously, and can strengthen adaptability to chemically mechanical polishing (CMP) and metal sputtering technologies such as (Al-PVD), reduce the probability of happening of mark asymmetrical deformation, improve alignment precision.
Fig. 4 shows alignment system structural representation of the present invention, and this alignment system mainly is made up of light source module, lighting module, image-forming module, detecting module, signal Processing and locating module (not illustrating among the figure) etc.Light source module mainly comprises light source, shutter, optoisolator and the radio frequency modulator (not illustrating among the figure) of a plurality of discrete wavelength that near infrared or infrared band are provided; Lighting module comprises Transmission Fibers and lamp optical system; Image-forming module mainly comprises: the object lens of large-numerical aperture, beam splitter, spatial filter, level are in conjunction with interferometer, polychromatic light piece-rate system and imaging optical system; Detecting module comprises with reference to grating and photodetector; Signal Processing and locating module mainly comprise photosignal conversion and amplification, analog to digital conversion and digital signal processing circuit etc.
The principal character of this alignment system is, by survey in image planes alignment mark ± light intensity of 1 order diffraction light coherent imaging after the reference Grating Modulation, obtain the coarse position information of alignment mark by the phase information of optical signal transmissive; Survey simultaneously the overlapping at different levels times relevant interference signal Strength Changes of positive and negative order diffraction hot spot of same stages time of senior diffraction light of alignment mark, obtain the precise position information of alignment mark according to phase information with the signal of different frequency change at pupil plane.This alignment system can produce the registration signal with strong Technological adaptability, high sensitivity and high s/n ratio, and the alignment system repeatability precision can reach 3-5nm, satisfy fully live width 90nm and 90nm following to alignment request.
Alignment system provides the illuminating bundle that comprises a plurality of discrete wavelength, preferentially adopts four discrete wavelength, and wherein has two wavelength at least near infrared or infrared band, for example, and 532nm, 633nm, 785nm and 850nm.Multi-wavelength (λ
1, λ
2, λ
3And λ
4) illuminating bundle is through single-mode polarization maintaining fiber 501 transmission, is coupled into bundling device 503 through fiber coupler 502 then, outputs to the lighting module of alignment system again by single-mode polarization maintaining fiber 504.
Employed LASER Light Source can be gas laser, solid state laser, semiconductor laser, perhaps fiber laser etc.In addition, also comprise Flattened Gaussian Beams (Flat-top Gaussian beam) shaper (not shown) in the light source module 1, be used for the Gaussian beam integer is become Flattened Gaussian Beams.
Above-mentioned alignment system uses the multiwavelength laser illuminating bundle, can suppress the influence of the interference cancellation effect of many process layers generations, improves Technological adaptability; Use the light illumination of near infrared and far infrared wavelength, can effectively solve the absorption problem of the dielectric material of low k value, and can be used for the marker detection of polysilicon process layer, thereby improve registration signal intensity in limit of visible spectrum.
Lighting module comprises Transmission Fibers and Kohler illumination system, and the multi-wavelength illuminating bundle passes through lens 505, illuminating aperture diaphragm 506 and lens 507 successively, and the small reflector 508a reflection through being positioned on dull and stereotyped 508 enters the imaging optical path system then.
Image-forming module comprises first imaging optical path (being the coarse alignment light path), second imaging optical path (being the fine alignment light path) and the 3rd imaging optical path (being the CCD imaging optical path, not shown among Fig. 4).Wherein, the 3rd imaging optical path is imaged on alignment mark and division line on the CCD camera photosurface together, is used for the monitoring of manual alignment and video on the one hand, also can carry out Flame Image Process and pattern-recognition on the other hand.First imaging optical path with alignment mark ± be imaged on the reference grating that is positioned at image planes after 1 order diffraction light is relevant, carry out coarse alignment; Second imaging optical path makes the positive and negative order diffraction hot spot of same stages time of senior diffraction light of alignment mark overlapping relevant at pupil plane, carries out fine alignment.First imaging optical path comprises object lens 510, achromatic λ/4 wave plates 509, catoptron 511a, spatial filter 512, polychromatic light piece-rate system 513 and lens combination 514.Second imaging optical path comprises that object lens 510, achromatic λ/4 wave plates 509, bi-directional beam divider 516, spatial filter 517 and 521, level are in conjunction with interferometer 518 and 522 etc.
Detecting module comprises that the first detection light path (being that coarse alignment is surveyed light path), second is surveyed light path (being that fine alignment is surveyed light path) and the 3rd detection light path (is a ccd image detection light path, not shown among Fig. 4), correspond respectively to first imaging optical path, second imaging optical path and the 3rd imaging optical path.First surveys light path comprises with reference to grating 515, Transmission Fibers 525 and photodetector 526.Second surveys light path comprises polychromatic light piece- rate system 519 and 523, photodetector array 520a-520d and 524a-524d.
In the wafer station scanning process, first imaging optical path to alignment mark ± 1 order diffraction light coherent imaging, first surveys light path surveys the light intensity of grating picture after correspondence is with reference to Grating Modulation in image planes, is obtained the coarse position information of alignment mark by phase information.Second imaging optical path makes inferior overlapping being concerned with of positive and negative order diffraction hot spot of same stages of senior diffraction light of alignment mark, surveys light path by second and surveys at different levels times relevant interference signal Strength Changes at pupil plane, obtains the precise position information of alignment mark.The 3rd surveys the picture that light path adopts CCD camera detection alignment mark and division line, is used for the monitoring of manual alignment and video on the one hand, also can carry out Flame Image Process and pattern-recognition on the other hand, is used for auxiliary aligning automatically.
The multi-wavelength illuminating bundle impinges perpendicularly on the silicon chip alignment mark through object lens 510, and reflection or diffraction take place.Object lens 510 are to aim at key element in the imaging optical path, and these lens must have the multilevel diffraction light of enough big numerical aperture (for example NA=0.8) with on the silicon chip alignment mark different color light of collecting.When NA=0.8, if use the lighting source of wavelength 850nm, then can survey pitch is the less grating alignment marks of 1.1 μ m.In addition, for guaranteeing between silicon chip and alignment system suitable distance is arranged, the object lens of preferred long working distance.
Less when the alignment mark grating cycle, during with illumination wavelengths magnitude suitable (referring generally to) less than 5 λ, diffraction efficiency of grating is relevant with the polarization characteristic of illuminating bundle, therefore utilize achromatic λ/4 wave plates 509, make linearly polarized light behind achromatic λ/4 wave plates 509, the hot spot that incides on the wafer is a circularly polarized light, and circularly polarized light comprises the vertical linearly polarized light of both direction, guarantees always to have a polarization direction can produce high efficiency diffraction light.
When the four-quadrant mark shown in use Fig. 3 (b), the multilevel diffraction light of the multi-wavelength that alignment mark produces, wherein first grating 71, second grating 72, the 3rd grating 74 and the 4th grating 75 ± 1 order diffraction light is through being positioned at the catoptron 511a reflection on dull and stereotyped 511, by a spatial filter 512, with the parasitic light cross talk effects of contiguous mark or product structure on the elimination wafer, the multi-level diffraction light of different wave length realizes the separation of different color lights through polychromatic light piece-rate system 513.With the wavelength is λ
1Be example, form a 4f system by alignment mark, object lens 510, spatial filter 512, lens combination 514 with reference to grating 515.First grating 71, second grating 72, the 3rd grating 74 and the 4th grating 75 ± 1 order diffraction light is being positioned on the reference grating 515 of image planes through lens combination 514 coherent imagings, survey transmitted light intensity through Transmission Fibers 525 by photodetector 526, phase information according to the different cycles light intensity signal is caught mark, obtain the rough position (x and y direction) of alignment mark, concrete principle is similar to Fig. 1 description of the Prior Art.
Senior diffraction light of the multi-wavelength of second grating 72 and the 3rd grating 74, for example ± 3 grade, ± 5 grades and ± 7 grades, seeing through dull and stereotyped 511 incides on the bi-directional beam divider 516, the diffraction light of one of them direction (for example y direction) sees through bi-directional beam divider 516, and the diffraction light of another direction (for example x direction) is through the beam-splitting surface 516a of bi-directional beam divider 516 reflection.The structure of beam-splitting surface 516a as shown in Figure 5, comprise two regional a and b, it is regional transmission that zone a is positioned at the beam-splitting surface centre position, make the diffraction light of a certain direction (for example y direction) can directly see through bi-directional beam divider 516, it is reflector space that zone b is positioned at beam-splitting surface two side positions, makes the diffraction light of other direction (for example x direction) reflect fully.Can realize above-mentioned functions by beam-splitting surface 516a is carried out the regional area plated film, for example to regional b plating reflectance coating, regional a plating anti-reflection film; Also can directly the beam splitter material of regional transmission correspondence be removed to form through hole, for example on beam splitter, the pairing part of regional a be made through hole, allow light beam directly pass.Equally, also can make regional a is reflector space, and regional b is a regional transmission.Further, beam-splitting surface 516a can also comprise more zone.
See through bi-directional beam divider 516 the y direction multi-wavelength ± 3 grades, ± 5 grades and ± 7 order diffraction light at first eliminate the influence of parasitic lights through a spatial filter 521; Then through a level in conjunction with interferometer 522 make ± 3 grades, ± 5 grades and ± 7 order diffraction hot spots corresponding overlapping relevant (referring to Fig. 6); The interference signal of multi-wavelength realizes that through polychromatic light piece-rate system 523 different coloured light separates; In the alignment mark scanning process, not at the same level time interference signal is with different frequency change, survey the Strength Changes of 3 grades, 5 grades and 7 grades interference signals by detector array 524a-524d simultaneously at pupil plane, can obtain the exact position of alignment mark y direction according to the phase information of the interference signal that changes with different frequency.Equally, through the multi-wavelength of the x direction of beam-splitting surface 516a reflection ± 3 grades, ± 5 grades and ± 7 order diffraction light pass through spatial filter 517, level successively in conjunction with interferometer 518, polychromatic light piece-rate system 519 and detector array 520a-520d, by survey the variation of not at the same level time interference signal intensity at pupil plane, can obtain the exact position of alignment mark x direction.
Through the alignment mark x direction of bi-directional beam divider 516 beam splitting and the principal section overlapping, the light path that is concerned with of y direction multilevel diffraction light is orthogonal, so represents that with solid line and dotted line the principal section of two light paths is vertical mutually respectively among Fig. 4 on beam-splitting surface 516a.
Fig. 5 shows the beam-splitting surface synoptic diagram of bi-directional beam divider of the present invention.
Fig. 6 shows basic structure and the principle schematic of a kind of level of the present invention in conjunction with interferometer.This level is made up of a level coupling system and analyzer 805 in conjunction with interferometer.The level coupling system can be based on coordinate inverting interferometer, based on prism interferometer, based on lateral shearing interferometer and based on optical grating diffraction the level coupling system, specifically can be referring to Chinese invention patent " the level coupling system of a kind of alignment system of lithographic equipment and this alignment system ", publication number: CN1949087.Provided a level coupling system based on prism interferometer among Fig. 6, it is by right-angle prism 801, right-angle prism 802, and achromatism λ/4 wave plates 803, catoptron 804 are purchased with optical path difference compensator 800.Right-angle prism 801 and 802 is glued together, and cemented surface is 802a, and cemented surface 802a also is the polarization beam splitting face simultaneously.If the multilevel diffraction light of incident is the p linearly polarized light ,+3-+7 order diffraction light incides right-angle prism 801 through optical path difference compensator 800, sees through polarization beam splitting face 802a outgoing again after reflecting surface 801a reflection, and polarization state is constant; Multi-level diffraction light-the 3--7 level incides right-angle prism 802 through polarization beam splitting face 802a, see through achromatism λ/4 wave plates 803, to pass through achromatism λ/4 wave plates 803 once more after catoptron 804 reflections, twice changes polarization state by achromatism λ/4 wave plates, 803 backs is the s linearly polarized light, reflection back outgoing on polarization beam splitting face 802a; The two-beam polarization direction of outgoing is vertical mutually, through analyzer 805, the polarization direction of analyzer 805 becomes miter angle with the two-beam polarization direction of outgoing, relevant after the two-beam polarization direction resolution of vectors of outgoing, thus realized multi-level diffraction light same stages time overlapping, the interference function of positive and negative level hot spot correspondence.Optical path difference compensator 800 is used to compensate the additional optical distance that achromatism λ/4 wave plates 803 are introduced, and for example is Babinet-Soleit compensator.
Of the present invention based on bi-directional beam divider 516 and grade positive and negative level time overlapping coherent system structure of diffraction pattern and principle in conjunction with interferometer 518,522, on the one hand, by using bi-directional beam divider to make the multilevel diffraction pattern of two vertical direction of alignment mark separate fully under the situation of energy loss not having, improved the signal to noise ratio (S/N ratio) of registration signal; Make that on the other hand the multilevel diffraction light of two vertical direction is overlapping respectively, relevant, and surveying light path separates fully, effectively reduce level in conjunction with the design of interferometer, the difficulty of processing and debuging, help reducing cost, improve the stability and the repeatability precision of system.
The illuminating bundle of four discrete wavelength of alignment system employing of the present invention (for example: 532nm, 633nm, 785nm, when 850nm) throwing light on alignment mark simultaneously, the diffraction light of different wave length is overlapped, therefore, therefore the necessary separate detection of the signal of different wave length needs to use the polychromatic light piece-rate system to separate wavelength optical signals.
Among the present invention, polychromatic light piece-rate system 513,519 and 523 can adopt different principles and device to realize, can comprise for the beam splitting system based on dispersion element: prism (Cornu prism, Li Telu prism etc.), blazed grating and echelon grating; Also can be based on the beam splitting system of dichroism element, interference filter for example also can be based on the beam splitting system of DOE diffraction optical element (for example CSG-chromatic separated grating).
The preferential many blazed gratings of a kind of transmission-type that adopt are as the polychromatic light piece-rate system, the many blazed gratings of described transmission-type comprise broken line type blazed grating and subregion type blazed grating, and many blazed gratings are made up in broken line type-subregion, its concrete form or structure are referring to Chinese invention patent (1) " the level coupling system of a kind of alignment system of lithographic equipment and this alignment system ", publication number: CN1949087; (2) " be used for lithographic equipment alignment system and the level in conjunction with optical-mechanical system ", publication number CN1936711.Common blazed grating structural parameters are by centre wavelength optimization, the edge wavelength (532nm for example, the diffraction efficiency of grating of 850nm) locating reduces, even use high-octane laser, the decay of this energy also is clearly.At this moment can adopt many blazed gratings, a kind of is the many blazed gratings of broken line type, the groove face that replaces common blazed grating with the facet of two different blazing angles, the facet of two different blazing angles is worked simultaneously during work, thereby two maximal values appear on energy-wavelength curve, correspond respectively to two blaze wavelengths, curve is descended slowly at two ends, can cover bigger wavelength coverage.Because the delineation of the many blazed gratings of broken line type need be used the special cutter of scribing, and depicts two broken line type groove faces on every groove, it is less therefore only to be suitable for wire casing density, the echelette of every wire casing workplace broad.Another kind is the many blazed gratings in subregion, is the work groove face of a blazed grating is divided into two or more zones (by the wavelength number decision of required separation) delineation respectively, and each subregional wire casing density is identical, the blazing angle difference.Its essence is the amalgamation of the common blazed grating of polylith, do not have too big difficulty during delineation, can delineate the grating of higher line groove density.
Alignment mark structure of the present invention can be used for two laser multi-level diffraction light grid off-axis alignments (ATHENA) alignment system described in the technology formerly equally, strengthens the inferior diffraction intensity of a plurality of orders of diffraction simultaneously.
The same compatible SPM series of markings described in the technology formerly of alignment system of the present invention.
Alignment system of the present invention can also be realized the measurement to the correlation parameter of lithographic equipment simultaneously, based on the positional information of alignment mark is surveyed determine in out of focus, energy, dosage, live width, contact hole size or the critical size at least one.
The above embodiment of the present invention is used for better describing specific implementation method of the present invention, and not should be understood to limitation of the present invention.The present invention specifically is applied to but is not limited to the manufacturing of integrated circuit (IC), this device can also be used for otherwise manufacturing, comprises MEMS (micro electro mechanical system) (MEMS) device, Micro-Opto-Electro-Mechanical Systems (MOEMS) device, integrated optics system, LCD panel (LCD), thin-film head etc.And in above-mentioned other application, " wafer " of the present invention can be replaced by more general term " substrate "." light source " and " light beam " involved among the present invention comprises all types of electromagnetic radiation, for example: KrF excimer laser (wavelength 248nm), ArF excimer laser (wavelength 193nm), F2 laser instrument (wavelength 157nm), Kr2 laser instrument (wavelength 146nm), Ar2 laser instrument (wavelength 126nm), ultrahigh pressure mercury lamp (g-line, i line), extreme ultraviolet light source (wavelength coverage of 5-20nm) or ion beam and electron beam etc.
Claims (23)
1. bi-directional beam divider that is used for the alignment system of lithographic equipment, it is characterized in that: comprise reflector space and regional transmission, described reflector space reflects incident light fully, and described regional transmission sees through incident light fully.
2. the bi-directional beam divider that is used for the alignment system of lithographic equipment according to claim 1, it is characterized in that: the distribution of described reflector space and regional transmission can be that zone line is a regional transmission, two side areas is a reflector space, also can be that zone line is a reflector space, two side areas be a regional transmission.
3. the bi-directional beam divider that is used for the alignment system of lithographic equipment according to claim 1 is characterized in that: described regional transmission and reflector space can be by realizing beam-splitting surface subregion plated film.
4. the bi-directional beam divider that is used for the alignment system of lithographic equipment according to claim 1 is characterized in that: described regional transmission can be to remove corresponding beam splitter material to form through hole, allows light beam directly see through.
5. the bi-directional beam divider that is used for the alignment system of lithographic equipment according to claim 1 is characterized in that: the incident light of described reflection fully and the multilevel diffraction light of the orthogonal both direction that the described incident light that sees through fully is respectively the grating type alignment mark.
6. alignment system that uses the described bi-directional beam divider of claim 1, it is characterized in that: this system comprises:
Light source module;
Lighting module;
The image-forming module that comprises object lens, first imaging optical path, second imaging optical path, described second imaging optical path also comprises described bi-directional beam divider;
Comprise that first surveys the detecting module that light path, second is surveyed light path; With
Signal Processing and locating module;
Described light source module is provided for the illuminating bundle of alignment system; Described illuminating bundle is by described lighting module transmission, illumination alignment mark; The object lens of described image-forming module are collected the reflected light and the diffraction light of described alignment mark, and are transferred to described first imaging optical path and second imaging optical path respectively to described alignment mark imaging; The described first detection light path is surveyed the described first imaging optical path imaging and is obtained first light signal, and the described second detection light path is surveyed the described second imaging optical path imaging and obtained second light signal; Described signal Processing and locating module are handled first light signal and second light signal, and determine the positional information of alignment mark according to the phase information of first light signal and second light signal.
7. alignment system according to claim 6, it is characterized in that: described alignment mark is the alignment mark that includes senior diffraction light enhancement mode grating, described senior diffraction light enhancement mode grating is to suppress zero level and the inferior diffraction light energy of even level, strengthens the grating of the inferior diffraction light light intensity of a plurality of odd levels simultaneously.
8. alignment system according to claim 6 is characterized in that: described illuminating bundle is the multi-wavelength illuminating bundle, comprises the laser beam of four discrete wavelength, has two wavelength at least near infrared or infrared band in described four discrete wavelength.
9. alignment system according to claim 6 is characterized in that: described light source module uses laser instrument, and described laser instrument can be gas laser, can be solid state laser, can be semiconductor laser, can also be fiber laser.
10. alignment system according to claim 6 is characterized in that: comprise the Flattened Gaussian Beams integer type device in the described light source module.
11. alignment system according to claim 6 is characterized in that: the described illuminating bundle that shines on the wafer is a circularly polarized light.
12. alignment system according to claim 6 is characterized in that: described alignment mark ± 1 order diffraction light is at the first imaging optical path coherent imaging of described image-forming module.
13. alignment system according to claim 6 is characterized in that: the positive and negative order diffraction hot spot of the same stages of senior diffraction light of described alignment mark time is corresponding overlapping relevant at second imaging optical path of described image-forming module.
14. alignment system according to claim 6 is characterized in that: described second imaging optical path comprises two levels in conjunction with interferometer, makes inferior corresponding overlapping being concerned with of positive and negative order diffraction hot spot of same stages of senior diffraction light of alignment mark.
15. alignment system according to claim 6 is characterized in that: described two levels are made up of level coupling system and analyzer in conjunction with interferometer.
16. alignment system according to claim 15 is characterized in that: described level coupling system can be a coordinate inverting interferometer, can be prism interferometer, can be lateral shearing interferometer, can also be the level coupling system of diffraction grating.
17. alignment system according to claim 6 is characterized in that: described bi-directional beam divider sees through described alignment mark diffraction light in one direction, the diffraction light of the diffraction light vertical direction of reflection and described direction fully fully.
18. alignment system according to claim 6 is characterized in that: described image-forming module comprises the polychromatic light piece-rate system.
19. alignment system according to claim 18, it is characterized in that: described polychromatic light piece-rate system can be to use the beam splitting system of dispersion element, the beam splitting system of dichroism element can be to use, the beam splitting system of diffraction optical element can also be to use.
20. alignment system according to claim 6, it is characterized in that: described first surveys light path links to each other with described first imaging optical path, the transmitted light intensity that detection alignment mark picture passes through after the reference Grating Modulation that is positioned at the first imaging optical path image planes changes, and obtains described first light signal.
21. alignment system according to claim 6, it is characterized in that: described second surveys light path links to each other with described second imaging optical path, the light intensity of overlapping relevant high order order diffraction hot spot in the corresponding position of pupil plane of surveying alignment mark changes, and obtains described second light signal.
22. alignment system according to claim 6, it is characterized in that: described image-forming module can also comprise the 3rd imaging optical path, described detecting module can also comprise the 3rd and survey light path, and described the 3rd imaging optical path directly images in described alignment mark the CCD camera of described the 3rd detection light path.
23. a lithographic equipment that uses the described alignment system of claim 6 is characterized in that, described lithographic equipment comprises:
Illuminator;
Mask holder;
Mask platform;
Projection optical system;
Chip support;
Wafer station;
Described alignment system;
The coaxial alignment unit;
Catoptron and laser interferometer;
Servo-drive system and drive system; And
Master control system;
Described illuminator transmission exposing light beam; Described mask holder and mask platform support described mask; The alignment mark that mask pattern is arranged on the described mask and have periodic structure; Described projection optical system projects to the mask pattern on the described mask on the described wafer; Described chip support and wafer station support described wafer; The datum plate that contains reference mark is arranged on the described wafer station; Alignment mark with periodicity optical structure is arranged on the described wafer; Described alignment system is arranged between described mask platform and the described wafer station; Described coaxial alignment unit is used for mask registration; The position of described mask platform of described catoptron and laser interferometer measurement and wafer station; Described mask platform of described servo-drive system and drive systems and wafer station move; Described servo-drive system and drive system are controlled by described master control system; Described alignment mark is the alignment mark that includes senior diffraction light enhancement mode grating, and described senior diffraction light enhancement mode grating can strengthen the inferior light intensity of an above order of diffraction simultaneously.
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