CN101150058B - Sediment method for forming semiconductor metal key cushion - Google Patents
Sediment method for forming semiconductor metal key cushion Download PDFInfo
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- CN101150058B CN101150058B CN200610116405A CN200610116405A CN101150058B CN 101150058 B CN101150058 B CN 101150058B CN 200610116405 A CN200610116405 A CN 200610116405A CN 200610116405 A CN200610116405 A CN 200610116405A CN 101150058 B CN101150058 B CN 101150058B
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Abstract
This invention discloses a method for depositing semiconductor metal PAD including the following steps: 1, cutting a cavity in the same size with a necessary metal PAD on an Al foil with a laser cutter, 2, covering the Al foil on the surface of a chip and putting the cavity on an appointed position needing to deposit the PAD, 3, evaporating the metal film with a gold-plating machine and the PAD grows at the cavity place, which can reduce deposition time and reduce cost.
Description
Technical field
The present invention relates to semi-conductive test and analysis technology field, relate in particular to a kind of formation semiconductor alloy bond pad deposition process of (being called for short PAD).
Background technology
Chip operation all is to finish by the input/output signal of PAD.When abnormal conditions occurring in the test process of chip, need the independent performance of measuring some device, at this moment intrinsic PAD is not enough.For reducing cost, this just needs interim deposit PAD, and the chip internal metal wire is connected to this PAD, comes input/output signal via this PAD, so that whether measurement function is normal or whether performance is up to standard.
Prior art is carried out the deposit of metal bonding pad by focused ion beam (Focused Ion beam is hereinafter to be referred as FIB).FIB is a kind of ion beam Precision Machining instrument, and traditional focus formula ion cluster microscope has following function: the cutting of (1) fixed point; (2) material evaporation optionally; (3) property strengthened etching or selective etch; And (4) etch endpoint detection etc.Present focused ion beam microscope is widely used in the semiconductor electronic industry and IC (integrated circuit) is industrial, and its main application can be divided into following five big classes: (1) IC circuit mending and layout verification; (2) test piece of penetration type electron microscope is made; (3) component faults is observed and is analyzed; (4) production line processing procedure anomaly analysis; (5) the photoresistance cutting of IC processing procedure monitoring-for example etc.Carry out the deposit of metal bonding pad by function (2).Because the area of metal bonding pad and thickness all have strict requirement, required time of deposit is long, and for example: the deposit area is that the metal bonding pad of 1 micron of 80 * 80 micron, the degree of depth needs 7 hours 20 minutes.
Summary of the invention
The technical problem to be solved in the present invention provides a kind of deposition process that forms the semiconductor alloy bond pad, and this method can shorten deposition time, reduces cost, and easy and simple to handle, can reach the deposit effect of expection.
For solving the problems of the technologies described above, the invention provides a kind of deposition process that forms the semiconductor alloy bond pad, comprise the steps:
Step 1 cuts out on aluminium foil and required metal bonding pad cavity of the same size with radium-shine cutting machine;
Step 2 covers chip surface with aluminium foil, and the cavity is placed on the assigned address that needs the depositing metal bond pad;
Step 3 with gilding machine evaporation metal film, goes out the metal bonding pad empty director.
The assigned address of the need depositing metal bond pad described in the step 2 is the top of chip internal metal wire exit.
Step 2 is specially: utilize described chip internal metal wire to be benchmark at microscopically, the cavity is covered the edge of this metal wire, depositing region is confined in the cavity, and links to each other with this metal wire.
Between step 2 and step 3, increase by a step: fixing with depressing around the aluminium foil with tweezers.
Compare with prior art, the present invention has following beneficial effect: the invention provides a kind of deposition process of efficient, easy semiconductor alloy bond pad, this method can shorten deposition time, reduces cost, and easy and simple to handle, can reach the deposit effect of expection.Same deposit area is the metal bonding pad of 1 micron of 80 * 80 micron, the degree of depth, adopts prior art to need 7 hours 20 minutes, and adopts the inventive method only to need 77 minutes.
Description of drawings
Fig. 1 is a radium-shine cutting aluminium foil process schematic diagram in the step 1 of the present invention;
Fig. 2 is the effect schematic diagram of radium-shine cutting back aluminium foil in the step 1 of the present invention;
Fig. 3 is the process schematic diagram of gilding machine evaporation metal film in the step 3 of the present invention;
Fig. 4 is the effect schematic diagram that the metal bonding pad formed after step 3 of the present invention was finished.
Embodiment
The present invention is further detailed explanation below in conjunction with drawings and Examples.
The invention provides a kind of deposition process that forms the semiconductor alloy bond pad, comprise the steps:
Step 1. utilizes the location cutting function of radium-shine cutting machine to cut out a cavity on aluminium-foil paper, and its size and required PAD consistent size are (common as 80um * 80um); The process of radium-shine cutting machine cutting aluminium foil as shown in Figure 1, radium-shine cutting machine principle: utilize high energy laser beam that sample is cut, the user can pass through the display monitoring Instrument working state, comprise and define laser beam zone of action size and regulate laser beam energy etc., in cutting process, can also pass through the synchronous online observation cutting effect of camera lens.Effect after the radium-shine cutting cuts out a cavity as shown in Figure 2 on aluminium foil.
Step 2. covers the aluminium foil in the step 1 on the chip, and guarantees the position that the cavity rests on needs deposit PAD, the top of chip internal specified metal line exit just, as shown in Figure 3.
Step 3. will be built the chip of aluminium foil and put into gilding machine, selected electric current and time, the evaporation metal film, as shown in Figure 3, gilding machine principle: utilize energetic ion (Ar) to strike on platinum (Pt) target, target atom (platinum) flies out and is deposited on sample surfaces from surface sputtering and forms film, and film thickness is relevant with deposition rate and time; After the plating time arrived, the place grew the PAD that is fit to test usefulness in the cavity, as shown in Figure 4.
Adopt the inventive method, with the deposit area is 80 * 80 microns, thick 1 micron metal bonding pad is an example: intercept one section aluminium-foil paper that is slightly larger than chip size, measure 80 * 80 microns at microscopically, utilize the high energy laser beam of radium-shine cutting machine that aluminium-foil paper is cut, form a square cavity, utilize the chip internal metal wire to be benchmark at microscopically, the cavity is covered the metal wire edge, depositing region is confined in the cavity, and link to each other with metal wire, aluminium is depressed around thin fixing with tweezers, put into gilding machine then and carry out evaporation, default gilding machine electric current 30A, gold-plated speed is 13 nanometers, the process of finishing the deposit degree of depth 1 micron metal bond pad only needs 77 minutes.
Claims (4)
1. a deposition process that forms the semiconductor alloy bond pad is characterized in that, comprises the steps:
Step 1 cuts out on aluminium foil and required metal bonding pad cavity of the same size with radium-shine cutting machine;
Step 2 covers chip surface with aluminium foil, and the cavity is placed on the assigned address that needs the depositing metal bond pad;
Step 3 with preparation of ion plated gold machine evaporation platinum film, goes out the metal bonding pad empty director.
2. the deposition process of formation semiconductor alloy bond pad as claimed in claim 1 is characterized in that, the assigned address of the need depositing metal bond pad described in the step 2 is the top of chip internal metal wire exit.
3. the deposition process of formation semiconductor alloy bond pad as claimed in claim 1 or 2, it is characterized in that, step 2 is specially: utilize the high energy laser beam of radium-shine cutting machine that aluminium-foil paper is cut, form a square cavity, utilize described chip internal metal wire to be benchmark at microscopically, the cavity is covered the edge of this metal wire, depositing region is confined in the cavity, and links to each other with this metal wire.
4. the deposition process of formation semiconductor alloy bond pad as claimed in claim 1 is characterized in that, increases by a step between step 2 and step 3: fixing with depressing around the aluminium foil with tweezers.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN200610116405A CN101150058B (en) | 2006-09-22 | 2006-09-22 | Sediment method for forming semiconductor metal key cushion |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN200610116405A CN101150058B (en) | 2006-09-22 | 2006-09-22 | Sediment method for forming semiconductor metal key cushion |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101150058A CN101150058A (en) | 2008-03-26 |
| CN101150058B true CN101150058B (en) | 2010-05-12 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN200610116405A Expired - Fee Related CN101150058B (en) | 2006-09-22 | 2006-09-22 | Sediment method for forming semiconductor metal key cushion |
Country Status (1)
| Country | Link |
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| CN (1) | CN101150058B (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101728229B (en) * | 2008-10-31 | 2011-11-30 | 中芯国际集成电路制造(上海)有限公司 | Method for forming metal pad |
| CN109085488B (en) * | 2018-06-29 | 2021-01-22 | 上海华虹宏力半导体制造有限公司 | Chip testing method |
-
2006
- 2006-09-22 CN CN200610116405A patent/CN101150058B/en not_active Expired - Fee Related
Non-Patent Citations (3)
| Title |
|---|
| JP特开2003-324134A 2003.11.14 |
| 黄冠凯 李清庭.氮化铝镓/氮化镓异质接面金属-半导体-金属光侦测器之制作与特性分析.国立中央大学图书馆硕博士论文 |
| 黄冠凯,李清庭.氮化铝镓/氮化镓异质接面金属-半导体-金属光侦测器之制作与特性分析.国立中央大学图书馆硕博士论文,91学年度.2003,(91),14-17. * |
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| CN101150058A (en) | 2008-03-26 |
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Address after: 201203 Shanghai city Zuchongzhi road Pudong New Area Zhangjiang hi tech Park No. 1399 Patentee after: Shanghai Huahong Grace Semiconductor Manufacturing Corp. Address before: 201206, Shanghai, Pudong New Area, Sichuan Road, No. 1188 Bridge Patentee before: Shanghai Hua Hong NEC Electronics Co.,Ltd. |
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