CN101149570A - Process for reclaiming light shield - Google Patents
Process for reclaiming light shield Download PDFInfo
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- CN101149570A CN101149570A CNA2006101270342A CN200610127034A CN101149570A CN 101149570 A CN101149570 A CN 101149570A CN A2006101270342 A CNA2006101270342 A CN A2006101270342A CN 200610127034 A CN200610127034 A CN 200610127034A CN 101149570 A CN101149570 A CN 101149570A
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- light shield
- corrosion
- soaked
- clean
- oven dry
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Abstract
This invention relates to a sort of callback processing method of the light cover (Photo Mask) after the metal chrome film is wiped off. Its processing procedure is that: Make the callback light cover which has the metal chrome film to cross the dissolution, and wipe off the metal chrome film of the light cover, and clean and dry the light cover, and check the external estate of the light cover, and skive and wipe off the conceivable rudimental chemical component and eyewinker of the surface of the light cover, and then clean and dry the light cover which is skived, at last check the measure up. It makes the callback light cover to be the production which has the useful value by this craftwork approach.
Description
Technical field
The present invention relates to a kind of high-tech semiconductor, panel manufacturing industry etc. of being applicable to and need to use the technology of light shield industry, be specifically related to discarded light shield after removing the crome metal film, in addition the method utilized of reclaiming.
Background technology
Light shield (Photo Mask) be a kind of electron-beam exposure system that utilizes with the instrument of the graphic making on the chromium film on glass or quartz, contain chromium film (Cr) part on this glass or the quartz and be light and can't see through and go.
The manufacture process that is used in semiconductor factory with light shield is an example, and semiconductor or wafer manufacture process are made of hundreds of roads to the technology in thousands of roads, is repeating photolithography, corrosion, film, diffusion, ion implantation or the like process.Light shield just is to use in photolithography technology (Photolithography), wafer is before entering exposure bench (stepper or scanner) and exposing, need to be coated with by photoresist coating machine (PR coater) earlier the photoresist (photo resister) of last layer fixed thickness, delivering to exposure bench again exposes, pattern on the light shield (Pattern) is reappeared on wafer, after the exposure through development, the photographic fixing step, just calculate and finish photolithography technology, remove photoresist through corrosion technology again, will obtain needed pattern (Pattern).
Yet the light shield that uses the back to be eliminated is direct destruction with present processing mode, and does not have further value.
Summary of the invention
Fundamental purpose of the present invention is to provide a kind of process for reclaiming light shield of removing behind the crome metal film, and the light shield after reclaiming is utilized again, promptly the crome metal film on the light shield of glass or quartzy material is removed, and this light shield is reduced into finished product before undressed.
The applicable technical field of the present invention contains semiconductor and panel is made the field, the use of light shield (Photo Mask) is just as using an egative film, directly with the circuit arrangement map transfer printing on semi-conductive wafer, by excellent technology, see through light shield and throw single image to wafer.Trend along with the semiconductor graph thinning, the following light shield of nanoscale has become the target of global light shield factory development efforts, therefore following light shield demand will grow with each passing day and continue to grow up, and the range of application of light shield (Photo Mask) also will increase along with industry development.
A kind of light shield of the present invention (Photo Mask) recovery and treatment method, its processing implementation step is:
Step 1, corrosion: remove the crome metal film that reclaims the light shield surface with chemolysis liquid;
Step 2, clean, oven dry: will clean oven dry through the light shield after the corrosion;
Step 3, process test: the surface state that detects light shield;
Step 4, grinding: remove residual chemical analysis and the foreign matter of light shield surface possibility that reclaims with lapping mode, finish cleaning really;
Step 5, clean, oven dry: will clean oven dry through the light shield after grinding;
Step 6, process test: if detect flow process of then passing through step 4, step 5 once more not up to specification.
Be up to the standards and then be finished product.
More particularly, light shield of the present invention (Photo Mask) recovery and treatment method comprises following more detailed step: step 1, corrosion:
1-1 places corrosion groove immersion treatment with the light shield of containing metal chromium film, and the corrosion groove includes corrosion liquid, make corrosion liquid be heated to 20～60 ℃ Celsius after, light shield was soaked in the corrosion groove 10～20 minutes fully;
1-2 is soaked in light shield in another pure water groove again, carries out about 1 minute pure water soaking and washing;
1-3 is soaked in light shield in another neutralization chamber that contains neutralizer, and after making this neutralizer be heated to 40～50 ℃ Celsius, and light shield was soaked in the neutralization chamber about 3 minutes;
1-4 is soaked in light shield in another pure water groove at last, carries out about 1 minute pure water soaking and washing;
Step 2, clean, oven dry: will clean oven dry through the light shield after the corrosion;
Step 3, process test: the surface state that detects light shield;
Step 4, grinding: remove chemical analysis and foreign matter that the light shield surface may be residual;
Step 5, clean, oven dry: will clean oven dry through the light shield after grinding;
Step 6, process test: if detect flow process of then passing through step 4, step 5 once more not up to specification;
Be up to the standards and then be finished product.
Description of drawings
Shown in Figure 1 is the process flow diagram of process for reclaiming light shield of the present invention.
Embodiment
The present invention proposes a kind of reasonable in design and can make the new technology invention of light shield recycling because the application of present stage light shield (Photo Mask) still remains to be improved.
See also the process flow diagram of Fig. 1 of the present invention about its technology of light shield recycling step of the present invention.
Step 1, corrosion:
1-1, with the processing that the light shield that reclaims is removed the crome metal film, exactly light shield is placed corrosion groove immersion treatment, the corrosion groove includes corrosion liquid (cerium ammonium nitrate salpeter solution Ce (NH
4)
2(NO
3)/HNO
3Or mistake chloric acid HClO
4Concentration 10%～25% (w/v)), and after making corrosion liquid in this corrosion groove be heated to 20～60 ℃ Celsius, the light shield (Photo Mask) of containing metal chromium film was soaked in the corrosion groove 10～20 minutes fully, macrotype light shield with compositions such as containing metal chromium films, do the chemical treatment of freeization of molecule,, make itself and light shield bottom surface (quartz glass) reach the released state that gets loose so as to the crome metal film is taken out of.
1-2, through previous step is rapid handle after, again light shield is soaked in another pure water (more than the Spec:10 Ω) groove, carry out about 1 minute pure water soaking and washing, clean up fully so as to corrosion liquid and the residuals that light shield (Photo Mask) adhering on surface.
After 1-3, the preliminary corrosion liquid for the treatment of above-mentioned steps soak and go out crome metal film and pure water soaking and washing to finish, light shield is soaked in the neutralization chamber that contains neutralizer in addition again, neutralizer in this neutralization chamber includes NaOH NaOH or potassium hydroxide KOH, concentration is 5%～45% (w/v), and make neutralizer (NaOH NaOH or potassium hydroxide KOH in this groove, concentration 5%～45%) be heated to 40～50 ℃ Celsius after, light shield was soaked in the neutralization chamber about 3 minutes, makes in it and light shield bottom surface (quartz glass) state.
1-4, finish be soaked in neutralizer after, light shield is soaked in another pure water corrosion groove (more than the Spec:10 Ω) again, carries out about 1 minute pure water soaking and washing, cleans up fully so as to corrosion liquid and the residuals that light shield (Photo Mask) adhering on surface.
Step 2, clean, oven dry:
To clean and oven dry through the light shield of corrosion process through brushing tool (Brush), cavernous body (sponge) and air knife.
Step 3, process test:
Use ocular examination, confirm to detect the surface state of light shield, its test item comprises: project that depression, scratch, bubble and particulate, surface are dirty or the like, and wherein depression, scratch, bubble and particulate all can not exist, and surperficial dirty License Value can not be greater than 5um.
Step 4, grinding:
Use cerium oxide (CeO2) powder to be in harmonious proportion with water, its concentration is that 5～30% (w/v) are (as 10%, water with 1KG ceria oxide powder allotment 10L), with lapping mode, to light shield surface grinding 10～30 minutes, remove so as to chemical analysis and foreign matter that may be residual with light shield (Photo Mask) surface of reclaiming, make its light shield bottom surface (quartz glass) finish cleaning really.
Step 5, clean, oven dry:
To clean and oven dry through the light shield of process of lapping through brushing tool (Brush), cavernous body (sponge) and air knife.
Step 6, process test:
If check flow process of then passing through step 4, step 5 once more not up to specification.The light shield that all conforms with standard specification then is judged to non-defective unit.
Its Interventions Requested and standard are as follows:
| Interventions Requested | The check item | Specification |
| Ocular examination | Depression | Can not have |
| Scratch | Can not have | |
| Bubble and particulate | Can not have | |
| The surface is dirty | ＞5um none | |
| Transmitance | 230～260nm | More than 95% |
| The uv ultraviolet light | 200nm | More than 85% |
| The gross thickness variance | ≤50um | |
| Thickness | ±0.2mm | |
| Flatness | The surface | ≤25um |
| The back side | ≤25um |
When through above-mentioned corrosion, clean/oven dry, technology detects, grind, clean/technologies such as oven dry after, whether the technology of final step detects promptly carries out the strictness check to the light shield surface state, check the transmittance of light shield, anti-UV ultraviolet ray and surfaceness thereof to close in regulation simultaneously.
The present invention does not also see content the essence identical or fellow that have with the present patent application claim by through searching and consulting in the patent case of having published and having checked and approved both at home and abroad, and obvious the present invention has novelty, creativity and practicality.
Claims (4)
1. a process for reclaiming light shield is characterized in that, the steps include:
Step 1, corrosion:
1-1 places corrosion groove immersion treatment with the light shield of containing metal chromium film, and the corrosion groove includes corrosion liquid, make corrosion liquid be heated to 20～60 ℃ Celsius after, light shield was soaked in the corrosion groove 10～20 minutes fully;
1-2 is soaked in light shield in another pure water groove again, carries out about 1 minute pure water soaking and washing;
1-3 is soaked in light shield in another neutralization chamber that contains neutralizer, and after making this neutralizer be heated to 40～50 ℃ Celsius, and light shield was soaked in the neutralization chamber about 3 minutes;
1-4 is soaked in light shield in another pure water groove at last, carries out about 1 minute pure water soaking and washing;
Step 2, clean, oven dry: will clean oven dry through the light shield after the corrosion;
Step 3, process test: the surface state that detects light shield;
Step 4, grinding: remove chemical analysis and foreign matter that the light shield surface may be residual;
Step 5, clean, oven dry: will clean oven dry through the light shield after grinding;
Step 6, process test: if detect flow process of then passing through step 4, step 5 once more not up to specification;
Be up to the standards and then be finished product.
2. process for reclaiming light shield as claimed in claim 1 is characterized in that, among the step 1-1, corrosion liquid is cerium ammonium nitrate salpeter solution Ce (NH
4)
2(NO
3)/HNO
3, concentration 10%～25% (w/v).
3. process for reclaiming light shield as claimed in claim 1 is characterized in that, among the step 1-1, corrosion liquid was chloric acid HClO
4, concentration 10%～25% (w/v).
4. process for reclaiming light shield as claimed in claim 1 is characterized in that, among the step 1-3, neutralizer includes NaOH NaOH or potassium hydroxide KOH, and concentration is 5%～45% (w/v).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN200610127034A CN100576091C (en) | 2006-09-21 | 2006-09-21 | Process for reclaiming light shield |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN200610127034A CN100576091C (en) | 2006-09-21 | 2006-09-21 | Process for reclaiming light shield |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101149570A true CN101149570A (en) | 2008-03-26 |
| CN100576091C CN100576091C (en) | 2009-12-30 |
Family
ID=39250153
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN200610127034A Active CN100576091C (en) | 2006-09-21 | 2006-09-21 | Process for reclaiming light shield |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN100576091C (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102184841A (en) * | 2010-12-17 | 2011-09-14 | 无锡华润上华半导体有限公司 | Method and system for recycling ultrapure water of wafer foundry machine platform |
| CN102221775A (en) * | 2010-04-19 | 2011-10-19 | Hoya株式会社 | Substrate manufacturing method, blank manufacturing method, regenerating photomask and manufacturing method thereof |
| CN104216217A (en) * | 2014-08-08 | 2014-12-17 | 湖南普照信息材料有限公司 | Rework method of adhesive film layer and chromium layer of photomask substrate |
| CN104932194A (en) * | 2015-07-22 | 2015-09-23 | 京东方科技集团股份有限公司 | Mask plate, manufacturing method thereof, and recycling method of mask plate |
| CN109031883A (en) * | 2018-08-23 | 2018-12-18 | 苏州瑞而美光电科技有限公司 | A kind of recovery and treatment method for scrapping lithography mask version |
-
2006
- 2006-09-21 CN CN200610127034A patent/CN100576091C/en active Active
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102221775A (en) * | 2010-04-19 | 2011-10-19 | Hoya株式会社 | Substrate manufacturing method, blank manufacturing method, regenerating photomask and manufacturing method thereof |
| CN102221775B (en) * | 2010-04-19 | 2013-03-20 | Hoya株式会社 | Substrate manufacturing method, blank manufacturing method, regenerating photomask and manufacturing method thereof |
| CN102184841A (en) * | 2010-12-17 | 2011-09-14 | 无锡华润上华半导体有限公司 | Method and system for recycling ultrapure water of wafer foundry machine platform |
| CN104216217A (en) * | 2014-08-08 | 2014-12-17 | 湖南普照信息材料有限公司 | Rework method of adhesive film layer and chromium layer of photomask substrate |
| CN104932194A (en) * | 2015-07-22 | 2015-09-23 | 京东方科技集团股份有限公司 | Mask plate, manufacturing method thereof, and recycling method of mask plate |
| CN109031883A (en) * | 2018-08-23 | 2018-12-18 | 苏州瑞而美光电科技有限公司 | A kind of recovery and treatment method for scrapping lithography mask version |
Also Published As
| Publication number | Publication date |
|---|---|
| CN100576091C (en) | 2009-12-30 |
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