CN101149563A - 一种电子束对准标记的制作方法及其应用 - Google Patents
一种电子束对准标记的制作方法及其应用 Download PDFInfo
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- CN101149563A CN101149563A CNA2006101278683A CN200610127868A CN101149563A CN 101149563 A CN101149563 A CN 101149563A CN A2006101278683 A CNA2006101278683 A CN A2006101278683A CN 200610127868 A CN200610127868 A CN 200610127868A CN 101149563 A CN101149563 A CN 101149563A
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- 238000000034 method Methods 0.000 title claims abstract description 72
- 238000010894 electron beam technology Methods 0.000 title claims abstract description 62
- 238000004519 manufacturing process Methods 0.000 title abstract description 4
- 229910052751 metal Inorganic materials 0.000 claims abstract description 66
- 239000002184 metal Substances 0.000 claims abstract description 66
- 238000001259 photo etching Methods 0.000 claims abstract description 38
- 239000000463 material Substances 0.000 claims abstract description 27
- 238000001704 evaporation Methods 0.000 claims abstract description 21
- 238000000137 annealing Methods 0.000 claims abstract description 19
- 229910045601 alloy Inorganic materials 0.000 claims abstract description 5
- 239000000956 alloy Substances 0.000 claims abstract description 5
- RNQKDQAVIXDKAG-UHFFFAOYSA-N aluminum gallium Chemical compound [Al].[Ga] RNQKDQAVIXDKAG-UHFFFAOYSA-N 0.000 claims abstract description 4
- 230000008020 evaporation Effects 0.000 claims description 13
- 238000010276 construction Methods 0.000 claims description 11
- 238000001459 lithography Methods 0.000 claims description 9
- 230000003287 optical effect Effects 0.000 claims description 9
- 229910002601 GaN Inorganic materials 0.000 claims description 6
- 150000002739 metals Chemical class 0.000 claims description 5
- 238000012360 testing method Methods 0.000 claims description 5
- 238000004458 analytical method Methods 0.000 claims description 4
- 230000008859 change Effects 0.000 abstract description 3
- 238000002955 isolation Methods 0.000 abstract description 2
- 239000000758 substrate Substances 0.000 abstract 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 abstract 2
- 238000000609 electron-beam lithography Methods 0.000 abstract 1
- 238000005468 ion implantation Methods 0.000 abstract 1
- 229910052757 nitrogen Inorganic materials 0.000 abstract 1
- 238000010586 diagram Methods 0.000 description 15
- 239000004065 semiconductor Substances 0.000 description 4
- 230000009286 beneficial effect Effects 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 230000008901 benefit Effects 0.000 description 2
- 238000011982 device technology Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 238000001514 detection method Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000004304 visual acuity Effects 0.000 description 1
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CNB2006101278683A CN100495216C (zh) | 2006-09-22 | 2006-09-22 | 一种电子束对准标记的制作方法及其应用 |
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CNB2006101278683A CN100495216C (zh) | 2006-09-22 | 2006-09-22 | 一种电子束对准标记的制作方法及其应用 |
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CN101149563A true CN101149563A (zh) | 2008-03-26 |
CN100495216C CN100495216C (zh) | 2009-06-03 |
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Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102064122A (zh) * | 2010-12-09 | 2011-05-18 | 中国电子科技集团公司第十三研究所 | 用于GaN功率器件的对位标记的制作方法 |
CN102969302A (zh) * | 2012-11-21 | 2013-03-13 | 华中科技大学 | 基于二氧化铪的电子束套刻标记及其制作方法 |
CN106684032A (zh) * | 2015-11-05 | 2017-05-17 | 中芯国际集成电路制造(北京)有限公司 | 互连结构的形成方法和曝光对准系统 |
CN108269914A (zh) * | 2016-12-30 | 2018-07-10 | 中国科学院上海微系统与信息技术研究所 | 一种电子器件的制作方法 |
CN108682668A (zh) * | 2018-06-28 | 2018-10-19 | 厦门市三安集成电路有限公司 | 一种耐高温金属对准标记及其制备方法和应用 |
CN112563246A (zh) * | 2020-12-18 | 2021-03-26 | 河源市众拓光电科技有限公司 | 一种光刻套刻标记及其制备方法 |
CN117270339A (zh) * | 2023-11-21 | 2023-12-22 | 中国科学院上海微系统与信息技术研究所 | 一种绝缘衬底上高精度电子束套刻标记及制备方法 |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
RU2746676C1 (ru) * | 2020-09-01 | 2021-04-19 | Федеральное государственное автономное образовательное учреждение высшего образования "Национальный исследовательский университет "Московский институт электронной техники" | Термостабильная метка совмещения для электронной литографии |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5658469A (en) * | 1995-12-11 | 1997-08-19 | Quantum Peripherals Colorado, Inc. | Method for forming re-entrant photoresist lift-off profile for thin film device processing and a thin film device made thereby |
CN100367475C (zh) * | 2004-08-09 | 2008-02-06 | 中国科学院微电子研究所 | 适用于氮化镓器件的铝/钛/铝/铂/金欧姆接触系统 |
CN100394560C (zh) * | 2004-08-09 | 2008-06-11 | 中国科学院微电子研究所 | 适用于氮化镓器件的铝/钛/铝/钛/金欧姆接触系统 |
CN100364069C (zh) * | 2004-12-30 | 2008-01-23 | 中国科学院微电子研究所 | 应用于基于氮化镓材料的包封退火方法 |
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2006
- 2006-09-22 CN CNB2006101278683A patent/CN100495216C/zh not_active Expired - Fee Related
Cited By (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102064122B (zh) * | 2010-12-09 | 2012-10-17 | 中国电子科技集团公司第十三研究所 | 用于GaN功率器件的对位标记的制作方法 |
CN102064122A (zh) * | 2010-12-09 | 2011-05-18 | 中国电子科技集团公司第十三研究所 | 用于GaN功率器件的对位标记的制作方法 |
CN102969302A (zh) * | 2012-11-21 | 2013-03-13 | 华中科技大学 | 基于二氧化铪的电子束套刻标记及其制作方法 |
CN102969302B (zh) * | 2012-11-21 | 2015-08-26 | 华中科技大学 | 基于二氧化铪的电子束套刻标记及其制作方法 |
CN106684032A (zh) * | 2015-11-05 | 2017-05-17 | 中芯国际集成电路制造(北京)有限公司 | 互连结构的形成方法和曝光对准系统 |
CN106684032B (zh) * | 2015-11-05 | 2019-07-02 | 中芯国际集成电路制造(北京)有限公司 | 互连结构的形成方法和曝光对准系统 |
CN108269914B (zh) * | 2016-12-30 | 2019-10-01 | 中国科学院上海微系统与信息技术研究所 | 一种电子器件的制作方法 |
CN108269914A (zh) * | 2016-12-30 | 2018-07-10 | 中国科学院上海微系统与信息技术研究所 | 一种电子器件的制作方法 |
CN108682668A (zh) * | 2018-06-28 | 2018-10-19 | 厦门市三安集成电路有限公司 | 一种耐高温金属对准标记及其制备方法和应用 |
CN112563246A (zh) * | 2020-12-18 | 2021-03-26 | 河源市众拓光电科技有限公司 | 一种光刻套刻标记及其制备方法 |
CN112563246B (zh) * | 2020-12-18 | 2022-06-24 | 河源市众拓光电科技有限公司 | 一种光刻套刻标记及其制备方法 |
CN117270339A (zh) * | 2023-11-21 | 2023-12-22 | 中国科学院上海微系统与信息技术研究所 | 一种绝缘衬底上高精度电子束套刻标记及制备方法 |
CN117270339B (zh) * | 2023-11-21 | 2024-02-27 | 中国科学院上海微系统与信息技术研究所 | 一种绝缘衬底上高精度电子束套刻标记及制备方法 |
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