CN101145402B - Flash memory card test method - Google Patents
Flash memory card test method Download PDFInfo
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- CN101145402B CN101145402B CN2007101764281A CN200710176428A CN101145402B CN 101145402 B CN101145402 B CN 101145402B CN 2007101764281 A CN2007101764281 A CN 2007101764281A CN 200710176428 A CN200710176428 A CN 200710176428A CN 101145402 B CN101145402 B CN 101145402B
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- flash memory
- memory card
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Abstract
The invention discloses a device and a method for testing a daughter board of a FLASH memory. The device comprises a DC power supply, a power monitoring chip, a single-chip microcomputer, a clock crystal oscillator, a decoder, a driver, a shift register and a status indicator circuit. The method comprises inserting the daughter board of the FLASH memory to be test, turning on the DC power supply, allowing the single-chip microcomputer to work after the power-on-reset by the power monitoring chip, performing chip selection of the daughter board of the FLASH memory by using the decoder and a control bus driver, testing the daughter board of the FLASH memory by using an address bus driver and a data bus driver, and finally displaying the test result by the status indicator circuit and a status indicator driver. The invention can test up to the 8 daughter boards of the FLASH memory at one time and helps to increase the production test efficiency of the daughter board of the FLASH memory and improve the test validity.
Description
Technical field
The present invention relates to flash memory (FLASH) memory card measuring technology, refer in particular to a kind of FLASH memory card method of testing.
Background technology
The FLASH storer has obtained using very widely as a kind of non-volatile memory medium, usually, several FLASH memory chips are integrated in make a subcard on the platelet, SODIMM-144 golden finger by standard links to each other with the mainboard socket, this FLASH memory card can not take the space of mainboard, this has certain superiority on current small device, highdensity veneer, and this FLASH memory card has good versatility and portability.
Because FLASH memory card itself can't power on separately and test, must power on by means of the mainboard that uses this subcard and test.Like this, because weld defects and device sole mass defective that FLASH memory card production technology causes, need after installing on the mainboard, this subcard just can be found, this can increase undoubtedly reprocesses cost, reduce production efficiency, for current increasingly competitive communication manufacturing is disadvantageous, how to improve testing efficiency and test validity and just becomes key.
Existing proving installation as shown in Figure 1, this device comprises: backstage PC and master control borad, master control borad further comprise the CPU minimum system.The workflow of this device is like this: at first FLASH memory card to be measured SODIMM-144 golden finger by standard is connected with 144 core sockets on the master control borad, then by the serial ports control line of backstage PC and the CPU minimum system communication on the master control borad, backstage PC sends order, the CPU minimum system carries out corresponding operating after receiving order, check the normally whether success of download version, format of this FLASH memory card, read and write whether correct., carry out communication by the Data Control line between CPU minimum system and the FLASH memory card here, this proving installation can only be tested a FLASH memory card at every turn.
Test to the FLASH memory card in the prior art has the following disadvantages:
1) need test by the background commands transmission by corresponding mainboard;
2) testing efficiency is low, can only test a FLASH memory card at every turn, is not suitable for requirements of mass production, influences production cost.
Summary of the invention
In view of this, fundamental purpose of the present invention is to provide a kind of FLASH memory card method of testing, once can test a plurality of FLASH memory cards, and then has improved the production test efficient of FLASH memory card and the validity of test.
For achieving the above object, technical scheme of the present invention is achieved in that
A kind of flash memory card method of testing, this method may further comprise the steps:
A, from mounted all FLASH memory cards to be measured, select current FLASH memory card to be measured;
B, the FLASH memory card to be measured of current selection is tested, shown the state of each chip in the FLASH memory card of testing according to test result;
Described step B comprises:
B1, judge whether to discern the sign ID of each chip in the FLASH memory card, if can discern, then execution in step B2 is passed through in this test; Otherwise, this test errors, and by state indication misdirection, and stop test to the FLASH memory card that comprises this chip;
B2, each chip in the FLASH memory card that can identification id is wiped, judged and wipe whether success, if wipe successfully, then execution in step B3 is passed through in this test; Otherwise, this test errors, and stop test to the FLASH memory card that comprises this chip;
B3, each chip of can identification id and wiping in the FLASH memory card of success is read and write, judged whether read-write is consistent, if read-write is consistent, then this test is passed through; Otherwise, this test errors, and by state indication misdirection.
This method further comprises: test mode pilot lamp before the test FLASH memory card.
Further, this method further comprises: select next piece FLASH memory card to be measured as current FLASH memory card to be measured, circulation execution in step B is up to the test of finishing mounted all FLASH memory cards to be measured.
FLASH memory card method of testing provided by the present invention, can once test polylith FLASH memory card, automatically after test is finished, judge the state of each FLASH memory card by status indicator lamp, and which chip that can navigate to which FLASH memory card simultaneously goes wrong, can improve testing efficiency and test validity greatly like this, help reducing production costs.And the proving installation structure among the present invention program is simple relatively, easy to operate, ease for use is good, and for the test first-pass yield that improves later process, it is very useful that cost is reprocessed in reduction, also can satisfy requirement of mass production.
Description of drawings
Fig. 1 is a FLASH memory card test device structural representation in the prior art;
Fig. 2 is FLASH memory card test device surface structure synoptic diagram among the present invention;
Fig. 3 is the surface structure synoptic diagram of pcb board at the middle and upper levels of FLASH memory card test device among the present invention;
Fig. 4 is FLASH memory card test device structural representation among the present invention;
Fig. 5 is FLASH memory card method of testing process flow diagram among the present invention.
Embodiment
Below in conjunction with accompanying drawing explanation is in further detail done in concrete enforcement of the present invention.
Fig. 2 is a FLASH memory card test device surface structure synoptic diagram, as shown in Figure 2, the printed circuit board (PCB) of this proving installation (PCB, Printed Circuit Board) part is divided into upper and lower two-part structure, upper strata pcb board 2 is test jack part, i.e. top plate FLASH_TEST part; Lower floor's pcb board 1 is the Single-chip Controlling part, it is bottom plate FLASH_Control part, connect by socket plug between the levels pcb board, the version replication that top plate FLASH_TEST part can be used for the FLASH memory card uses, can test the state of eight FLASH memory cards simultaneously at most in the present invention, and finish the version replication of eight FLASH memory cards.There is shell the upper strata pcb board 2 of this proving installation and lower floor's pcb board 1 outside, i.e. loam cake 3 and lower cover 4, and power supply (PWR, power) lamp 5 and operation (RUN) lamp 6 are arranged on the loam cake 3.
Fig. 3 is the surface structure synoptic diagram of pcb board at the middle and upper levels of FLASH memory card test device among the present invention, as shown in Figure 3, the bar 11 that eight slotting FLASH memory cards are arranged on the plate, be called the FLASH bar, a green LED (LED is with on the next door of every FLASH bar 11, Light Emitting Diode) 12 and four red LED 13, wherein, green LED 12 lamps are bright, expression is tested with the corresponding FLASH memory card of this green LED, and the LED13 of four redness is used to refer to four FLASH chips, i.e. D1 in the FLASH memory card after testing, D2, D3, the state of D4 chip, lighting expression has problem, and the then expression test that do not work is passed through.Four red LED for every FLASH bar next door, right from a left side, indicate the state of D1, D2 on the FLASH memory card, D3, D4 chip respectively, four red LED also can come corresponding with D1, D2, D3, D4 chip on the FLASH memory card according to other in proper order, and this depends on programming.
Fig. 4 is FLASH card test device structural representation among the present invention, as shown in Figure 4, this device mainly comprises: direct current (DC, Direct Current) power supply 401, power monitoring chip 402, single-chip microcomputer 403, clock crystal oscillator 404,38 code translators 405, driver 406, shift register 407, driver 408, status indicator lamp circuit 409, address bus driver 410 and data bus driver 411, wherein, DC power supply 401 is used to provide the power supply of all proving installations to supply with.
Herein, DC power supply 401 is to realize that by linear voltage regulator (LDO, Low DropoutRegulator) conversion of 3.3V replaces, and comes to provide DC electric current for all devices with this with the 5V power supply adaptor.This DC power supply links to each other with all device, if in Fig. 4, draw with being connected of all devices will be in a mess, so, omitted these connections in the drawings for clear.
Power monitoring chip 402 is used to single-chip microcomputer 403 that electrification reset is provided.
Single-chip microcomputer 403, it is the main control chip, be used to store the software program of finishing, and utilize and store good software program, in conjunction with 38 code translators 405 and control total driver 406, finish sheet choosing to the FLASH memory card, utilize chip selection signal, by address bus, data bus, finish test to the FLASH memory card in conjunction with address bus driver 410, data bus driver 411.
Adopt the AT89C52 single-chip microcomputer herein, software program is loaded in the ROM (read-only memory) (ROM, Read Only Memory) of AT89C52 inside.
Clock crystal oscillator 404 is used for providing work clock to single-chip microcomputer, cooperates single-chip microcomputer to finish whole test process.
38 code translators 405 are used to select the FLASH memory card when Pretesting, chip selection signal are provided for every FLASH memory card; 38 code translators 405 link to each other with P1 (3,4, the 5) mouth of single-chip microcomputer 403.
Control bus driver 406 is used to provide the driving of control bus; The OE of control bus driver 406 enables P1 (7) mouthful line traffic control of pin with single-chip microcomputer 403.
Shift register 407: the control bus that is used for producing 24 bit address buses and 32 pilot lamp of status indicator lamp circuit.
Because each shift register is eight, and the FLASH memory card has 24 bit address buses, so need three shift registers, in addition, need four 164 shift registers to produce 32 pilot lamp control signals, so shift register 409 reality are represented four shift registers, and are 164 registers.
Indicator light circuit driver 408 is used to provide the driving of indicator light circuit; The OE of indicator light circuit driver 408 enables P1 (6) mouthful line traffic control of pin with single-chip microcomputer 403.
Status indicator lamp circuit 409, single-chip microcomputer to FLASH memory card test process in, be used to provide test mode indication.
Four FLASH chips are arranged in each FLASH memory card, each FLSAH chip is represented the state tested with a pilot lamp, so a FLASH memory card has the one of four states pilot lamp, eight FLASH memory cards just have 32 status indicator lamps, these status indicator lamps are red, the corresponding FLASH chip testing of the bright expression of red light is not passed through, and does not light the expression test and passes through.Single-chip microcomputer to FLASH memory card test process in, cooperate indicator light circuit driver 408 to show test results.
Address bus driver 410 is used to provide the driving of address bus.
Because each 164 shift register is eight, so produce 24 bit address buses by three 164 shift registers.Because every group address bus driver is 24, each FLASH memory card also is 24, and always have eight FLASH memory cards herein, so as shown in Figure 4,24 bit address buses of single-chip microcomputer 403 link to each other with eight FLASH memory cards by eight group address bus drivers, among the figure for clear, the pairing two group address bus drivers of FLASH1 and FLASH8 that only drawn, address bus driver (1) and address bus driver (8), other omission.Here, the OE of eight group address bus drivers enables pin and controls with eight chip selection signals respectively.
Data bus driver 411 is used to provide the driving of data bus.
The sixteen bit data bus is connected with the P0 (1-8) of single-chip microcomputer 403 and 16 mouths of P2 (1-8), because every group of data bus driver is sixteen bit, so the data bus of single-chip microcomputer 403 links to each other with the sixteen bit position datawire of eight FLASH subcards respectively by eight groups of data bus drivers, in like manner, for clear, only drawn among the figure and FLASH1 and the pairing two groups of data bus drivers of FLASH8, data bus driver (1) and data bus driver (8), other omission.Here, the OE of eight groups of data bus drivers enables pin and controls with eight chip selection signals respectively.
In addition, FLASH1～FLASH8 among Fig. 4: represent eight FLASH memory cards to be measured.
In addition, this device also comprises relay indicating light circuit and corresponding driving device, corresponding one of each FLASH memory card is used to refer to the relay indicating light whether this FLASH memory card is being tested, so, eight relay indicating lights are arranged, and these relay indicating lights are green, in test process, the corresponding FLASH subcard of the bright expression of green light is tested, and the expression green light that do not work goes bad or corresponding FLASH subcard is not tested.
This device can be tested the state of each chip in eight FLASH memory cards simultaneously, test contents comprise identification chip ID, check 24 address wires and the sixteen bit data line of FLASH memory card by 128 of FLASH memory card being carried out erase operation and read-write operation, can judge the short circuit and the problem of faulty soldering of bus, by the state of each chip on every FLASH memory card of the indication of the status indicator lamp on the proving installation.
Fig. 5 is FLASH memory card method of testing process flow diagram among the present invention, may further comprise the steps:
Here, described installing is that maximum eight FLASH memory cards to be measured are inserted, and opens all DC power supplys.The concrete FLASH memory card quantity that can test depends on selected code translator, below is example to test eight FLASH memory cards.
Single-chip microcomputer is lighted the PWR green light according to the program that is stored in self, and is normal with this DC power supply power supply of representing 3.3V, controls the RUN lamp simultaneously and begins to dodge slowly, comes representation program to bring into operation with this.
Single-chip microcomputer is carried out test according to the Automatic Program that is stored in self, lights 32 red status pilot lamp by shift register and driver and extinguishes after three seconds, and herein, the purpose of lighting is that the Guarantee Status pilot lamp itself is normal.
Here, current FLASH memory card is generally from FLASH1, single-chip microcomputer produces chip selection signal according to programmed control 38 code translators that are stored in self, after the driving through the control bus driver, finish sheet choosing to the FLASH1 memory card, choose the FLASH1 memory card, utilize chip selection signal to control the pairing green relay indicating light of FLASH1 simultaneously and light, represent that with this FLASH1 memory card tests.
Single-chip microcomputer utilizes self program stored, utilize chip selection signal, data bus, address bus by the FLASH1 correspondence, binding data bus driver and address bus driver, the state of test FLASH1 memory card, whether four chips at first testing in the FLASH1 memory card are on the throne, i.e. the ID of identification chip, if can discern, then this test is passed through; Otherwise, this test errors.
Four chips in the FLASH1 memory card are wiped again, wiped by 128 when carrying out erase operation, if wipe successfully, this test is passed through; Otherwise, this test errors.
At last four chips in the FLASH1 memory card are carried out read-write operation, write data 010101... and 101010... respectively, compare with the data of reading, if read-write is consistent, then this test is passed through; Otherwise, this test errors.
Can check the data bus of four chips in the FLASH1 memory card and the short circuit and the problem of faulty soldering of address bus by these operations.
The single-chip microcomputer utilization is stored in the program of self, utilizes RXD, the TXD Serial Port Line of single-chip microcomputer, produces 32 pilot lamp control signals by four 164 shift registers, and removes to control 32 indicator light circuits by the status indicator lamp driver.
For the FLASH1 memory card, if certain test event of all chips is passed through, then continue other project of test, all test event all-pass mistakes of all chips, then single-chip microcomputer does not all work by the pairing status indicator lamp of status indicator lamp driver control FLASH1 memory card; If a certain content measurement test errors of certain chip of FLASH1 memory card, then single-chip microcomputer is bright by the pairing status indicator lamp of chip of test errors in the status indicator lamp driver control FLASH1 memory card, and stops the test to FLASH1 memory card follow-up test project.
And as shown in Figure 3, four red led state pilot lamp are right from a left side, indicate the state of D1, D2 on the FLASH1 memory card, D3, D4 chip respectively, the test result that also can show D1, D2 on the FLASH1 memory card, D3, D4 chip in proper order according to other, the programming that this depends in the single-chip microcomputer to be stored.
Adopt above-mentioned steps, can test out the state of four chips in the FLASH1 memory card.
Utilize the same method of test FLASH1 memory card, circulation execution in step 505～507 is tested the state of each chip in other seven FLASH memory cards, up to the test of finishing mounted all FLASH memory cards to be measured.
After all tests were finished, the programmed control RUN lamp that the single-chip microcomputer utilization is stored in self converted quickflashing to by dodging slowly, controls eight green relay indicating lights simultaneously and glimmers successively, shows that test finishes.
The above is preferred embodiment of the present invention only, is not to be used to limit protection scope of the present invention.
Claims (3)
1. a flash memory card method of testing is characterized in that, this method may further comprise the steps:
A, from mounted all FLASH memory cards to be measured, select current FLASH memory card to be measured;
B, the FLASH memory card to be measured of current selection is tested, shown the state of each chip in the FLASH memory card of testing according to test result;
Described step B comprises:
B1, judge whether to discern the sign ID of each chip in the FLASH memory card, if can discern, then execution in step B2 is passed through in this test; Otherwise, this test errors, and by state indication misdirection, and stop test to the FLASH memory card that comprises this chip;
B2, each chip in the FLASH memory card that can identification id is wiped, judged and wipe whether success, if wipe successfully, then execution in step B3 is passed through in this test; Otherwise, this test errors, and stop test to the FLASH memory card that comprises this chip;
B3, each chip of can identification id and wiping in the FLASH memory card of success is read and write, judged whether read-write is consistent, if read-write is consistent, then this test is passed through; Otherwise, this test errors, and by state indication misdirection.
2. method according to claim 1 is characterized in that, this method further comprises: test mode pilot lamp before the test FLASH memory card.
3. method according to claim 1, it is characterized in that, this method further comprises: select next piece FLASH memory card to be measured as current FLASH memory card to be measured, circulation execution in step B is up to the test of finishing mounted all FLASH memory cards to be measured.
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| Application Number | Priority Date | Filing Date | Title |
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| CN2007101764281A CN101145402B (en) | 2007-10-26 | 2007-10-26 | Flash memory card test method |
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| CN2007101764281A CN101145402B (en) | 2007-10-26 | 2007-10-26 | Flash memory card test method |
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| CN101145402A CN101145402A (en) | 2008-03-19 |
| CN101145402B true CN101145402B (en) | 2010-06-09 |
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Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN101377538B (en) * | 2008-09-19 | 2011-02-16 | 北京时代民芯科技有限公司 | Microprocessor aging test system and test method |
| CN101488364B (en) * | 2009-02-10 | 2012-06-27 | 成都市华为赛门铁克科技有限公司 | Flash memory control method, apparatus and system |
| CN102486939B (en) * | 2010-12-06 | 2014-08-13 | 普天信息技术研究院有限公司 | Method and apparatus for testing joint test action group (JTAG) of memories |
| CN103077743B (en) * | 2011-10-25 | 2015-08-05 | 慧荣科技股份有限公司 | Burn-in method and test board for embedded flash memory card, and embedded flash memory card |
| CN103901289B (en) * | 2012-12-27 | 2016-12-28 | 华邦电子股份有限公司 | Test device and test voltage production method thereof |
| CN107886996A (en) * | 2017-11-28 | 2018-04-06 | 郑州云海信息技术有限公司 | A kind of method of batch testing NVME hard disks |
| CN109326315B (en) * | 2018-09-11 | 2021-04-20 | Oppo（重庆）智能科技有限公司 | Detection device for electronic component and method for fault test using the same |
| CN114067901A (en) * | 2022-01-17 | 2022-02-18 | 深圳市安信达存储技术有限公司 | Cluster test method, test terminal and storage medium of embedded storage chip |
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| US5574692A (en) * | 1995-06-07 | 1996-11-12 | Lsi Logic Corporation | Memory testing apparatus for microelectronic integrated circuit |
| CN1540926A (en) * | 2003-11-03 | 2004-10-27 | 中兴通讯股份有限公司 | Multiplexing drive unit for RAM with asynchronous dual ports |
| CN1779865A (en) * | 2004-10-05 | 2006-05-31 | 恩益禧电子股份有限公司 | Memory test circuit and method |
| CN2809806Y (en) * | 2005-06-17 | 2006-08-23 | 扬州恒信仪表有限公司 | IC card detecting instrument |
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Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5574692A (en) * | 1995-06-07 | 1996-11-12 | Lsi Logic Corporation | Memory testing apparatus for microelectronic integrated circuit |
| CN1540926A (en) * | 2003-11-03 | 2004-10-27 | 中兴通讯股份有限公司 | Multiplexing drive unit for RAM with asynchronous dual ports |
| CN1779865A (en) * | 2004-10-05 | 2006-05-31 | 恩益禧电子股份有限公司 | Memory test circuit and method |
| CN2809806Y (en) * | 2005-06-17 | 2006-08-23 | 扬州恒信仪表有限公司 | IC card detecting instrument |
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