CN101144154A

CN101144154A - Plasma uniformity control by gas diffuser hole design

Info

Publication number: CN101144154A
Application number: CNA2007101669357A
Authority: CN
Inventors: 崔寿永; J·M·怀特; 王群华; 李侯; 金棋云; 栗田直一; 元泰景; S·安瓦尔; 朴范秀; R·L·提纳
Original assignee: Applied Materials Inc
Current assignee: Applied Materials Inc
Priority date: 2004-05-12
Filing date: 2004-12-31
Publication date: 2008-03-19
Anticipated expiration: 2024-12-31
Also published as: CN1696768A; CN101144154B; CN100386668C

Abstract

Embodiments of a gas diffuser plate for distributing gas in a processing chamber are provided. The gas distribution plate includes a diffuser plate having an upstream side and a downstream side, and a plurality of gas passages passing between the upstream and downstream sides of the diffuser plate. The gas passages include hollow cathode cavities at the downstream side to enhance plasma ionization. The depths, the diameters, the surface area and density of hollow cathode cavities of the gas passages that extend to the downstream end can be gradually increased from the center to the edge of the diffuser plate to improve the film thickness and property uniformity across the substrate. The increasing diameters, depths and surface areas from the center to the edge of the diffuser plate can be created by bending the diffuser plate toward downstream side, followed by machining out the convex downstream side. Bending the diffuser plate can be accomplished by a thermal process or a vacuum process. The increasing diameters, depths and surface areas from the center to the edge of the diffuser plate can also be created computer numerically controlled machining. Diffuser plates with gradually increasing diameters, depths and surface areas of the hollow cathode cavities from the center to the edge of the diffuser plate have been shown to produce improved uniformities of film thickness and film properties.

Description

Adopt the plasma uniformity control of gas diffusion plate channels designs

The present patent application is that the applicant submitted on December 31st, 2004, and application number is 200410082199.3, and denomination of invention is divided an application for the application for a patent for invention of " adopting the plasma uniformity control of gas diffusion plate channels designs ".

Technical field

The embodiment of the invention generally is the method that reaches distribution of gas in deposition chamber about a kind of gas distribution plate assembly.

Background technology

Liquid-crystal display or flat-panel monitor generally are the active array indicating meters that is used in such as computer and TV screen.And, generally be to deposit film layers on the substrate (for example flat-panel monitor or semiconductor wafer use transparency carrier) with plasma enhanced chemical vapor deposition processing procedure (PECVD).PECVD finishes by introducing the mode that precursor gas or gaseous mixture enter the vacuum chamber that includes a substrate.This precursor gas or gaseous mixture typical case are down guided to pass near the vertical gas distribution plate of this vacuum chamber.Apply RF electric power to this vacuum chamber from one or more frequency of radio (RF) power supply that is coupled to this vacuum chamber, become plasma body so that the precursor gas in this vacuum chamber or gaseous mixture are excited.Can form a material layer by the substrate surface on the temperature controlled substrate support columns after gas that this is excited or the gaseous mixture reaction.Volatile byproducts between the reaction period then is to discharge this vacuum chamber from an exhaust system.

Flat board with the PECVD technical finesse generally is to belong to large flat, and its size often surpasses 370 millimeters x470 millimeters.The following large-area substrates that will occur above 4 square centimeters.Be used to provide even process gas and flow through dull and stereotyped gas distribution plate and generally belong to big area person, particularly with the gas distribution plate that is used for handling 200 millimeters and 300 millimeters semiconductor wafers by contrast.

When constantly rising, be used for controlling that thicknesses of layers and membranous layer property uniformity coefficient also become an important subject under discussion in the large area plasma enhanced chemical vapor deposition chamber along with size of substrate in the TFT-LCD industry.TFT is a kind of of flat-panel monitor.The difference of substrate center and substrate edges sedimentation rate and/or membranous layer property (for example stress in thin film) will become clearly.

Therefore, need a kind of gas distribution plate assembly that improves the improvement of film deposition thickness and membranous layer property uniformity coefficient badly.

Summary of the invention

The present invention is to provide and in deposition chamber, be used for the gas distribution plate of distribution of gas.In one embodiment, the gas distribution plate assembly that a plasma body deposition chamber is used comprises a diffuser plate, and it has a upstream side and a downstream side; And an internal gas passage and an extraneous gas passage, these passages are to pass between the upstream side of this diffuser plate and the downstream side and in this downstream side to comprise the hollow cathode chamber, and wherein the hollow cathode cavity volume density of this internal gas passage is come lowly than the hollow cathode cavity volume density of this extraneous gas passage.

In another embodiment, the gas distribution plate that a plasma body deposition chamber is used comprises a diffuser plate, and it has a upstream side and a downstream side; And an internal gas passage and extraneous gas passage, these passages are to pass between the upstream side of this diffuser plate and the downstream side and in this downstream side to comprise the hollow cathode chamber, and wherein the surface area density in the hollow cathode chamber of this internal gas passage comes lowly than the surface area density in the hollow cathode chamber of this extraneous gas passage.

In another embodiment, the gas distribution plate that a plasma body deposition chamber is used comprises a diffuser plate, and it has a upstream side and a downstream side; And a plurality of gas passages, it is to pass between the upstream side of this diffuser plate and the downstream side and in this downstream side to comprise the hollow cathode chamber, wherein the density in this hollow cathode chamber is that central authorities from this diffuser plate increase gradually toward the edge.

In another embodiment, a plasma body deposition chamber comprises a diffuser plate, and it has a upstream side and a downstream side; Internal gas passage and extraneous gas passage, these passages are to pass between the upstream side of this diffuser plate and the downstream side and in this downstream side to comprise the hollow cathode chamber, and wherein the volume density in the hollow cathode chamber of this internal gas passage is come lowly than the volume density in the hollow cathode chamber of this extraneous gas passage; And the substrate support columns in contiguous this diffuser plate downstream side.

In another embodiment, a plasma body deposition chamber comprises a diffuser plate, and it has a upstream side and a downstream side; Internal gas passage and extraneous gas passage, these passages are to pass between the upstream side of this diffuser plate and the downstream side and in this downstream side to comprise the hollow cathode chamber, and wherein the surface area density in the hollow cathode chamber of this internal gas passage comes lowly than the surface area density in the hollow cathode chamber of this extraneous gas passage; And the substrate support columns in contiguous this diffuser plate downstream side.

In another embodiment, a plasma body deposition chamber comprises a diffuser plate, and it has a upstream side and a downstream side; And a plurality of gas passages, it is to pass between the upstream side of this diffuser plate and the downstream side and in this downstream side to comprise the hollow cathode chamber, wherein the density in this hollow cathode chamber is that central authorities from this diffuser plate increase gradually toward the edge; And the substrate support columns in contiguous this diffuser plate downstream side.

In another embodiment, the gas distribution plate assembly that one plasma body deposition chamber is used comprises a diffuser plate, and it has a upstream side and a downstream side, and this gas diffusion plate is to be divided into many area on-axis and a plurality of upstream side of this diffuser plate and gas passage between the downstream side of passing, wherein this gas passage in each zone is identical, and density, volume and the surface-area in the hollow cathode chamber of gas passage is progressively to increase from the past edge of the central authorities of this diffuser plate in each zone.

In another embodiment, the method of the gas distribution plate assembly that a kind of manufacturing one plasma body deposition chamber is used, comprise the gas diffusion plate that manufacturing one has a upstream side and a downstream side, and pass a plurality of gas passages between this diffuser plate upstream side and the downstream side, this diffuser plate bending is made its projection level and smooth towards the downstream side, and accurate this convex surfaces of making flattens this downstream side surface.

In another embodiment, the method of the gas distribution plate assembly that a kind of manufacturing one plasma body deposition chamber is used, comprise precision and produce a gas diffusion plate with a upstream side and a downstream side, and pass a plurality of gas passages between this diffuser plate upstream side and the downstream side, wherein density, volume and the surface-area in the hollow cathode chamber of this diffuser plate are that central authorities from this diffuser plate progressively increase toward the edge.

In another embodiment, a kind of method that on a substrate, deposits a thin film layer, comprise and place one to have the deposition chamber of gas distribution plate one substrate, this gas distribution plate has the gas diffusion plate in a upstream side and a downstream side, and pass a plurality of gas passages between this diffuser plate upstream side and the downstream side and comprise the hollow cathode chamber in this downstream side, no matter be the volume density in this hollow cathode chamber of this internal gas passage wherein, or the surface area density in this hollow cathode chamber, or the density in this hollow cathode chamber is all than the volume density in this hollow cathode chamber of this extraneous gas passage, surface area density or density are come lowly; Allow process gas flow by a diffuser plate, between this diffuser plate and this substrate support columns, create a plasma body, and deposit a thin film layer on the substrate in this deposition chamber towards a substrate that is supported on the substrate support columns.

In another embodiment, one diffuser plate comprises one and has the main body of a top surface and a basal surface, pass a plurality of gas passages between this top surface and the basal surface, and an external region and an interior region, wherein being positioned at the top surface of this external region and this main body between basal surface is to come thickly than this main body between top surface that is positioned at this interior region and basal surface.

In another embodiment, the method of the gas diffusion plate that a kind of manufacturing one plasma body deposition chamber is used, comprise and produce a gas diffusion plate with a upstream side and a downstream side, and pass a plurality of gas passages between this diffuser plate upstream side and the downstream side, and accurate this downstream surface of making is to produce this protruding downstream surface.

In another embodiment, the method of the gas distribution plate assembly that a kind of manufacturing one plasma body deposition chamber is used, comprise that to have a diffuser plate in a upstream side and a downstream side with one crooked so that this downstream surface becomes concave surface and this upstream face to become projection, and produce a plurality of a plurality of gas passages that pass between this diffuser plate upstream side and the downstream side, it is by this hollow cathode chamber is reached from the mode that an almost smooth downstream surface begins almost to have same depth, and the opening hole that makes all gas passages have identical size, these opening holes are to be connected to each other to form this hollow cathode chamber.

Description of drawings

For helping to understand, components identical is to represent with the components identical symbol in the diagram;

Fig. 1 is a schematic cross-section of a bottom gate membrane transistor;

Fig. 2 one has the schematic cross-section of the deposition chamber of gas dispersion board component of the present invention;

Fig. 3 is the schematic cross-section of a gas dispersion plate;

Fig. 4 A is the schema of deposition one thin film layer on substrate in having the deposition chamber of diffuser plate;

When Fig. 4 B demonstration deposits on the substrate of one 1500 millimeters x1800 millimeters with the diffuser plate with homogeneous diffusion hole hole dia and degree of depth, measured sedimentation rate;

Fig. 5 shows the substrate both sides (501 and 502) of the contiguous filling channel that seals and 5 measuring positions on this substrate;

Fig. 6 A (preceding skill) shows the idea of hollow cathode effect;

6B-6G figure shows the design in various hollow cathodes chamber;

Fig. 7 A shows " diameter (D) ", the definition that " degree of depth (d) " reaches " start point () " of the boring that extends to a gas passage downstream end;

Fig. 7 B shows the size of a gas passage;

Fig. 7 C shows the size of a gas passage;

Fig. 7 D shows the size of a gas passage.

Fig. 7 E shows the distribution scenario of gas passage on the diffuser plate;

When Fig. 8 demonstration deposits on the substrate of one 1500 millimeters x1800 millimeters with the diffuser plate with the distribution of gas passage shown in Fig. 7 E, measured sedimentation rate;

Fig. 9 A shows the schema of making a diffuser plate;

Fig. 9 B shows the diffuser plate of a bending;

Fig. 9 C shows one through crooked and its diffuser plate of having been polished of diffuser plate side of side for the downstream;

Fig. 9 D shows that one has the depth profile of the diffusion boring that extends to diffuser plate gas passage downstream end, and this diffuser plate is the substrate that can be used to handle one 1500 millimeters x1850 millimeters;

Fig. 9 E is presented at the sedimentation rate that records on the substrate of one 1500 millimeters x1850 millimeters;

Fig. 9 F shows that one has the depth profile of the diffusion boring that extends to diffuser plate gas passage downstream end, and this diffuser plate is the substrate that can be used to handle one 1870 millimeters x2200 millimeters;

Fig. 9 G is presented at the sedimentation rate that records on the substrate of one 1870 millimeters x2200 millimeters;

Figure 10 A shows the schema that comes crooked diffuser plate with a thermal treatment;

Figure 10 B is at a diffuser plate that is used for being supported in the heating environment of crooked diffuser plate on the bracing frame;

Figure 10 C is presented at the diffuser plate that is positioned at the bending on the bracing frame in the heating environment;

Figure 11 A comes the schema of crooked diffuser plate with a vacuum-treat;

Figure 11 B is presented at the diffuser plate on the vacuum subassembly;

Figure 11 C is presented at the diffuser plate of the bending on the vacuum subassembly;

Figure 12 A demonstration creates the schema of the boring that may extend into the diffuser plate downstream side with different diameter and degree of depth;

Figure 12 B shows the sectional view of this diffuser plate of the boring that may extend into the diffuser plate downstream side with different diameter and degree of depth;

Figure 12 C one has the diffuser plate toward edge diffusion hole much at one by central authorities;

Its bottom surface of diffuser plate that Figure 12 D shows Figure 12 C is ground into the appearance behind the convex surface;

Figure 12 E shows that its bottom surface of diffuser plate of Figure 12 D is drawn as the appearance after almost smooth;

Figure 12 F shows that a diffuser plate that does not have any diffusion hole is bent to the appearance of a convex surface (bottom surface);

Figure 12 G shows the adopted son of the diffuser plate of Figure 12 F with diffusion hole;

Figure 12 H shows that its bottom surface of diffuser plate of Figure 12 G is drawn as the appearance after almost smooth;

Figure 12 I is presented at the adopted son that a plurality of zones have the diffuser plate of diffusion hole;

Figure 12 J shows the diffuser plate with blended hollow cathode chamber diameter, and its interior region hollow cathode cavity volume and/or surface area density are to come highly than its external region hollow cathode cavity volume and/or surface area density;

Figure 12 K shows a diffuser plate, and its most hollow cathode chamber is very little, only has the large-scale hollow cathode chamber of minority in the edge;

Figure 13 shows the synoptic diagram in its downstream side of diffuser plate with different diffusion hole density.

Embodiment

The invention described above feature can be by following detailed description of the invention, and with reference to embodiment and accompanying drawing and understand.Need know that subsidiary diagram only is in order to set forth a specific embodiment of the present invention, is not in order to restriction category of the present invention, and the present invention comprises that still other equivalences of described embodiment change.

The invention provides a kind of gas dispersion assembly, in order in a deposition chamber, to provide gas transmission.Following the present invention designs the plasma enhanced chemical vapor deposition chamber of handling large substrate with reference to one and illustrates, for example, and the branch office of US business's Material Used, plasma enhanced chemical vapor deposition (PECVD) system that the AKT manufacturing is sold.But, need know the present invention also can be used for such as etch system, other chemical gas-phase deposition systems and any need be in deposition chamber the system of part diffusing gas, comprise that those are used for handling the process system of circular substrate.

Fig. 1 shows the transverse section of a thin-film transistor structure.One of common TFT structure is that (back channel etch, BCE) (or bottom-gate) TFT structure is piled up in counter-rotating for as shown in Figure 1 back of the body passage etching.The adulterated armorphous silicon layer of gate dielectric (SiN) and this endogenous and n+ is preferably and uses the BCE processing procedure, because can be deposited in same PECVD processing procedure.BCE processing procedure shown here only need use 5 kinds of patterning light shields.Substrate 101 can comprise a kind of in visible spectrum the almost completely material of printing opacity, for example glass or clear plastics.This substrate is Any shape and size also.In general, concerning TFT used, this substrate was that a surface-area surpasses 500 square millimeters glass substrate.A kind of grid electrode layer 102 is formed on this substrate 101.This grid electrode layer 102 comprises the conductive layer that moves that can control charged carrier in this TFT.This grid electrode layer 102 also can comprise a kind of metal, for example aluminium, tungsten, chromium, tantalum or its combination.This grid electrode layer 102 can be known deposition technique, little shadow and etching technique form.Between this substrate 101 and this grid electrode layer 102, can comprise the insulation layer of one deck selective deposition, for example silicon dioxide layer or silicon nitride layer, its can also be described herein the PECVD system deposit.Afterwards, with known techniques with these grid electrode layer 102 little shadow patterning and etchings, to define this gate electrode.

One gate dielectric 103 is formed on this grid electrode layer 102.This gate dielectric 103 can be a kind of silicon dioxide layer, silica nitrogen layer (SiON) or silicon nitride (SiN) layer, deposits with an embodiment of this described PECVD system.The deposit thickness of this gate dielectric 103 is between 100 dusts to 6, in the scope of 000 dust.

Semiconductor piece layer 104 is deposited on this gate dielectric 103.This semiconductor piece layer 104 can comprise polysilicon or amorphous silicon (Si), its can be described thus an embodiment or other known methods of PECVD system deposit.The deposit thickness of semiconductor piece layer 104 is between 100 dusts to 3, in the scope of 000 dust.One adulterated semiconductor layer 105 is deposited on this semiconductor piece layer 104.This adulterated semiconductor layer 105 can comprise n+ type (n+) or the adulterated polysilicon of p-type (p+) or amorphous silicon (Si), its can be described thus an embodiment or other known methods of PECVD system deposit.The deposit thickness of this adulterated semiconductor layer 105 is between 100 dusts to 3, in the scope of 000 dust.One of the example of this adulterated semiconductor layer 105 is that n+ type sieve is mixed-the Si layer.Afterwards, with these semiconductor piece layer 104 and these adulterated semiconductor layer 105 little shadow patterning and etchings, to define these two kinds of retes that are overlying on this gate dielectric insulation layer, it simultaneously also can be as the storage capacitors dielectric layer with known techniques.This adulterated semiconductor layer 105 directly contacts the part of this semiconductor piece layer 104, to form semiconductor bridge joint district (junction).

Afterwards, deposition one conductive layer 106 on exposed surface.This conductive layer 106 comprises a kind of metal, for example aluminium, tungsten, molybdenum (Mo), chromium, tantalum or its combination.Can form this conductive layer 106 by known deposition technique.Both can be patterned the adulterated semiconductor layer of this conductive layer 106 and this 105 to define source electrode and the drain area among this TFT.Afterwards, can deposit one deck passive layer 107.Passive layer 107 similar shapes coat this exposed surface.In general this passive layer 107 be a kind of insulation layer and can comprise, silicon dioxide layer or silicon nitride (SiN) layer for example, and an embodiment or other known methods that can this described PECVD system deposit.The deposit thickness of this passive layer 107 is between 1000 dusts to 5, in the scope of 000 dust.Afterwards with known etching technique with these passive layer 107 little shadow patternings, in this passive layer 107, to open some contact holes.

Afterwards, deposition and patterning layer of transparent conductive layer 108 are to contact with this conductive layer 106.This transparency conducting layer 108 comprise a kind of in visible spectrum essence optical clear and conductive material.Transparency conducting layer 108 can comprise, for example, and indium tin oxide (ITO) or zinc oxide etc.According to known etching technique with this transparency conducting layer 108 patterning in addition.

Can be of the present invention an embodiment of PECVD system deposit this doping or amorphous silicon (Si), the silicon-dioxide (SiO not-mix (endogenous) that is used for liquid-crystal display (or flat-panel monitor) ₂), silicon oxynitride (SiON) and silicon nitride (SiN) rete.Described this TFT structure only is for the usefulness of setting forth, and the inventive method can be used in the manufacturing of any any device of using this invention.

Fig. 2 illustrates the example of a plasma body enhanced chemical vapor deposition system 200, and it is that (Santa Clara, the AKT of branch office manufacturing California) is sold by US business Applied Materials.This system 200 generally comprises a deposition chamber 202, and it is to be coupled to a gas source 204.This deposition chamber 202 has a plurality of walls 206 and a bottom 208 that can define part process volume 212.Generally be to utilize this process volume 212, enter or leave this deposition chamber 202 to help a moving substrate 240 via a port (not looking) that is positioned on these a plurality of walls 206.These a plurality of walls 206 can be supported a cap assemblies 210, and this cap assemblies 210 comprises a plenum space 214 in order to this process volume 212 is coupled to an exhaust port (it comprises the various assemblies of bleeding, and is not shown).

One substrate support 238 is to be positioned this deposition chamber 202 central authorities.This supporting component 238 can support a glass substrate 240 during processing procedure.In one embodiment, this substrate support 238 comprises an aluminium body 224, is wherein sealing the well heater 232 of at least one embedding.Be arranged in this well heater 232 of this substrate support 238, a resistance element for example is to be coupled to optionally power supply 274 and control type ground this substrate support 238 of heating and be positioned at glass substrate 240 to one preset temperatures on this assembly 238.Typical case is, in a CVD processing procedure, this well heater 232 can be kept this glass substrate 240 one under the uniform temperature between 150 ℃ to 460 ℃, decides on the process parameter of deposition material.

In general, this substrate support 238 has a downside 226 and a upside 234.This upside 234 is to support this glass substrate 240.This downside 226 has a cylinder that couples with it 242.This cylinder 242 can be coupled to this substrate support 238 a hoisting system (not shown) that moves this substrate support 238 between a processing position (as shown) that raises and a decline position, shifts out substrate or substrate is sent in this deposition chamber 202 from this deposition chamber 202 with help.This cylinder 242 also can provide the passage of electricity and thermocouple spongy lead at this substrate support 238 and other inter-modules of this system 200.

One corrugated tube 246 is to be coupled between the bottom 208 of this substrate support 238 (or this cylinder 242) and this deposition chamber 202.This corrugated tube 246 can provide between an air pressure that is vacuum-sealed in outside this process volume 212 and this deposition chamber 202, promotes the vertical shifting of this substrate support 238 simultaneously.

This substrate support 238 in general all can ground connection, make by a power supply 222 be supplied to a gas distribution plate assembly 218 (or be arranged in this deposition chamber cap assemblies or near other electrodes of this deposition chamber cap assemblies) RF electric power can excite the gas that is positioned at process volume 212, wherein this gas distribution plate assembly 218 is between this cap assemblies 210 and this substrate support 238, and this process volume 212 is between this substrate support 238 and this gas distribution plate assembly 218.This RF electric power from this power supply 222 generally is that the optic placode size elects to drive this chemical vapor deposition process.

This substrate support 238 also can support a shade system frame 248.In general, this shade system frame 248 can prevent that deposition from appearring in the edge of this glass substrate 240 and supporting component 238, so that substrate can not be bonded on this supporting component 238.This supporting component 238 has a plurality of holes 228, and it is can accept a plurality of lift pins 250 in wherein.This lift pin 250 typical cases are made by pottery or anodized aluminum.This lift pin 250 can with respect to this supporting component 238 by one optionally raising board 254 activate with this stayed surface 230 certainly and stretch out, and substrate can be seated in and this supporting component 238 one section space part of being separated by.

This cap assemblies 210 provides this process volume 212 1 top margins.This cap assemblies 210 typical cases can be removed or open to serve this deposition chamber 202.In one embodiment, this cap assemblies 210 is made of aluminum.This cap assemblies 210 comprises a plenum space 214 that is formed at wherein, and it is to be coupled to an outside air-bleed system (not shown).This plenum space 214 is to be used for air and discharging uniformly outside this deposition chamber 202 from the processing procedure by product of this process volume 212.

This cap assemblies 210 typical cases comprise an ingress port 280, are through ingress port 280 thus and be fed in the deposition chamber 202 by the process gas that this gas source 204 provided.This ingress port also is coupled to a purge gas source 282 simultaneously.This purge gas source 282 can provide a sanitising agent (for example dissociated fluorine) to the deposition chamber 202 to remove the deposition by-products that (comprises gas distribution plate assembly 218) on the deposition chamber hardware.

This gas distribution plate assembly 218 is to be coupled on the inboard 220 of this cap assemblies 210.But this gas distribution plate assembly 218 typical cases are configured to essence to follow the trail of this glass substrate 240 profiles, for example to the Polygons of large-area flat-plate substrate and the circle of wafer class.This gas distribution plate assembly 218 comprises a poroid area 216, is through poroid area 216 thus and be transferred in this process volume 212 by process gas that this gas source 204 provided and other gas.The poroid area 216 of this gas distribution plate assembly 218 is to be configured to provide equally distributed gas to make to pass this gas distribution plate assembly 218 and to enter in this deposition chamber 202.This gas distribution plate assembly also can be designed to have as being disclosed in the plurality of advantages of the gas distribution plate assembly in the following patent documentation that has been yielded this case applicant, comprise and put forward No. the 09/922nd, 219, the U.S. patent application case of Shen August 8 calendar year 2001 by people such as Keller; Put forward No. the 10/140th, 324, the U.S. patent application case of Shen on May 6th, 2002 by people such as Yim; Put forward No. the 10/337th, 483, the U.S. patent application case of Shen on January 7th, 2003 by people such as Blonigan; Checked and approved No. the 6th, 477,980, the United States Patent (USP) that gives people such as White on November 12nd, 2002; Put forward No. the 10/417th, 592, the U.S. patent application case of Shen on April 16th, 2003 by people such as Choi; Put forward No. the 10/823rd, 347, the U.S. patent application case of Shen on April 12nd, 2004 by people such as Choi; Its whole disclosure are incorporated herein in the reference mode.

This gas distribution plate assembly 218 typical cases comprise from the suspended diffuser plate (or breaker plate) 258 of a suspension plate 260.This diffuser plate 258 and this suspension plate 260 also can be made by a single element.A plurality of gas passages 262 be formed and pass this diffuser plate 258 with the gas of allowing a predetermined dispersion amount by this gas distribution plate assembly 218 and enter this process volume 212.The internal surface 220 that this suspension plate 260 can be kept this diffuser plate 258 and this cap assemblies 210 is in the state that a space separates, and enables to define one between wherein plenum space 264.This plenum space 264 allow gas flow by this cap assemblies 210 to be evenly dispersed in whole width ranges of this diffuser plate 258, make this gas can be provided in central poroid area 216 tops equably and pass this gas passage 262 with a uniform distribution flow velocity.

This diffuser plate 258 typical cases are made by stainless steel, aluminium, anodized aluminum, nickel or other electro-conductive materials.This diffuser plate 258 can be cast, be knocked, forging, hot pressing or calcination.The thickness of this diffuser plate 258 is can keep sufficient Flatness to make the unlikely processing operation that influences substrate on hole 266.The thickness of this diffuser plate 258 is between 0.8 inch to 2.0 inches.When making semiconductor wafer, this diffuser plate 258 can be circular, and 258 of this diffuser plates can be Polygons, for example rectangle when making flat-panel monitor.

Fig. 3 is the part synoptic diagram of an illustrative diffuser plate 258, this this diffuser plate be disclosed in yielded this case applicant on April in 2003 16 by the U.S. patent application case the 10/417th of carrying the Shen, No. 592, title " Gas Distribution Plate Assembly for Large Area Plasma Enhanced chemicalVapor Deposition ".This diffuser plate comprises first side or a upstream side 302 towards this cap assemblies 210, and opposed second side or a downstream side 304 towards this supporting component 238.Each gas passage 262 that is defined by one first boring (bore) 310 is to be couple to one second boring 312 via an ambut (orifice hole) 314, and merges the fluid channel that this diffuser plate 258 is passed in formation one.This first boring 310 is extended one first degree of depth, 330 to one bottoms 318 from the upstream side 302 of this diffuser plate 258.(beveled) that this first boring, bottom 318 of 310 can be pointed (tapered), inclined-plane, (chamfered) or circularly this fluidic is limited to reduce when this fluid flows into this ambut 314 by this first boring.These first boring, 310 diameters are generally 0.093 inch to 0.218 inch, and are to be 0.156 inch at an embodiment.

This second boring 312 be formed in this diffuser plate 258 and from this downstream side (or terminal) 304 to extend to one be 0.10 inch to 2.0 inches the degree of depth 332.Be preferably, this degree of depth 332 is between 0.1 inch to 1.0 inches.The diameter 336 of this second boring 312 is generally between 0.1 inch to 1.0 inches, and can one 10 degree to the angle 316 of 50 degree launch.This diameter 336 is preferably between 0.1 inch to 0.5 inch, and this start point 316 is between 40 degree between 20 degree.The surface-area of this second boring 312 is between 0.05 square inch to 10 square inches, and is preferably between 0.05 square inch to 5 square inches.The diameter of this second boring 312 is meant the diameter that intersects with this downstream side 304.One is used for handling the example of the diffuser plate of 150 millimeters * 1850 millimeters substrates, has 0.25 inch diameter and with 22 degree angle unfolded second borings 312.382 distance 380 is between 0 inch to 0.6 inch between adjacent second boring 312 edges, is preferably between 0 inch to 0.4 inch.First boring, 310 diameter normally (but being not limited to) is equal to or less than the diameter of this second boring 312 at least.(beveled) that this second boring, bottom 320 of 312 can be pointed (tapered), inclined-plane, (chamfered) or circularly flow out into this second loss of holing pressure 312 time by this ambut 314 to reduce when this gas stream.In addition, because of this ambut 314 and downstream side 304 very near therefore making this second boring 312 and minimizing towards the exposed surface area in the downstream side of substrate, and reduce the downstream side area that is exposed to this diffuser plate 258 under the fluorine during deposition chamber cleans, so as to reducing the probability of settled layer generation fluoride pollution.

This ambut 314 generally can couple the bottom 308 of this first boring 310 and the bottom 320 of this second boring 312.These ambut 314 diameters generally between 0.01 inch to 0.3 inch, are preferably between 0.01 inch to 0.1 inch, and the typical length 334 that has between 0.02 inch to 1.0 inches, are preferably 0.02 inch to 0.5 inch.This length 334 is main sources of back pressure in this plenum space 264 with the diameter (or other geometrical shapies) of this ambut 314, and it can promote being evenly distributed of gas in permanent these diffuser plate 258 upstream sides 302 more.This ambut 314 typical cases are that it is uniform being designed to 262 of a plurality of gas passages; But the restriction from this ambut 314 can be designed to be uneven, to cross a zone of this gas distribution plate 258 to promote more gas streams 262 of a plurality of gas passages, but not another zone.For instance, this ambut 314 can have the bigger short length 334 of diameter and/or in those gas passages 262, or this gas distribution plate 258 is a plurality of walls 206 near this treatment chamber 202, makes that more gases can flow through poroid regional 216 edge to improve the sedimentation rate of this glass substrate girth.The thickness of this diffuser plate is preferably between 0.8 inch to 2.0 inches between 0.8 inch to 3.0 inches.

Along with size of substrate in the TFT-LCD industry continues to increase, particularly work as substrate and be at least 1000 millimeters * 1200 millimeters (or 1,200,000 square millimeters) time, it is more and more important that the thicknesses of layers of large area plasma enhanced chemical vapor deposition (PECVD) and character were all once also becoming.All once problem comprises that the silicon nitride layer of some high speed deposition is in the higher sedimentation rate of large substrate middle section and the rete that more tightens.As if the uniformity coefficient of this rete is come thickly than fringe region and is " dome-shaped (domeshaped) " at middle section on the substrate.The more NC rete of fringe region has higher Si-H content.The creating conditions of TFT-LCD comprise have low Si-H content on the whole base plate (for example,＜15 atom %), high deposition rate (for example,〉1500 dusts/minute), and low uneven thickness one property (for example,＜15%).This Si-H content is calculated by FTIR (fourier transform infrared light) observed value.Large substrate has " dome-shaped " equal problem once worst.This problem can't be eliminated to change the mode that process recipe satisfies all conditions.Therefore, need to solve in the mode of improving this gas and/or plasma distribution.

The processing procedure of deposition one thin film layer is shown among Fig. 4 A in deposition chamber.This processing procedure is inserted one with substrate and is had in the deposition chamber of a diffuser plate by step 401 beginning.Then in step 402, allow process gas flow by a diffuser plate towards a substrate that is supported on the substrate support.In step 403, between this diffuser plate and this substrate support, create a plasma body afterwards.In step 404, in deposition chamber, deposit a thin film layer on substrate.Fig. 4 B shows the thickness pattern of silicon nitride film layer on the glass substrate.This substrate area is 1500 millimeters * 1800 millimeters.This diffuser plate has diffusion hole as shown in Figure 3.The diameter of this first boring 310 is 0.156 inch.The length 330 of this first boring 310 is 1.049 inches.The diameter 336 of this second boring 312 is 0.250 inch.The start point 316 of this second boring 312 is 22 degree.The length 332 of this second boring 312 is 0.243 inch.The diameter of this ambut 314 is that 0.016 inch and its length are 0.46 inch.This silicon nitride layer is the SiH with 2800sccm ₄, 9600sccm NH3 and 28000sccm N ₂Form following deposition of 1.5 holder ear pressure and 15000 watts of electric power.Distance between this diffuser plate and this substrate support is 1.05 inches.Process temperatures is to maintain 355 ℃.Sedimentation rate average out to 2444 dusts/minute and thicknesses of layers all once (15 millimeters edge exclusion rates) be 25.1% its be to require (＜15%) far above process specifications.This thickness pattern shows pattern or " dome-shaped " pattern that central authorities are thicker.Table 1 shows by the measured membranous layer property of wafer that places on this glass substrate.

Table 1 is measured the thicknesses of layers and the character of the substrate with silicon nitride settled layer

The measuring position	Thickness ()	RI	Stress (10 ⁹Dyne/cm ²)	Si-H (atom %)	WER (/minute)
The measuring position	Thickness ()	RI	Stress (10 ⁹Dyne/cm ²)	Si-H (atom %)	WER (/minute)	Edge I	5562	1.92	-0.7	12.5	664
Central authorities	8544	1.90	-6.7	4.2	456	Edge I	5562	1.92	-0.7	12.5	664
Central authorities	8544	1.90	-6.7	4.2	456	Edge II	6434	1.91	-1.2	10.8	665

It is two ends of 1800 millimeters substrates that edge I and edge II represent width respectively.The rete that the rete in this reflectivity (RI), stress in thin film, SiH concentration data and the close substrate center zone of wet etching speed (WER) data demonstration is positioned at substrate edges comes to such an extent that more tighten.The SiH concentration of substrate edges is the processing procedure boundary limitation condition near 15%.Wet etching speed then is that the mode in the solution that sample is immersed in BOE (etching oxide damping fluid) 61 is measured.

Can be used to explain that one of theory problem that central authorities are more such than edge heterogeneity is between diffuser plate and substrate and there is excessive entrap bubble in the substrate center zone and can't be effectively got rid of, thereby cause higher sedimentation rate in substrate center zone and the rete that more tightens.Sample test is to be designed to whether inspect this theory correct.As shown in Figure 5, in a PECVD deposition chamber, bring the bleed-off passage 214 (being shown in Fig. 2) that stops near substrate 501 sides and 502 sides with a heat-resistant adhesive.214 openings of bleed-off passage near other both sides make it have free passage.Therefore, create an asymmetric gas pumping state.If causing the reason of " dome-shaped " problem is because of can't taking away by the entrap bubble that the base material edge is excessive, then used the heterogeneity problem of the substrate edges of heat resistant adhesive tape to aggravate, and the heterogeneity problem of whole base plate is more worsened.But, the deposition results under the deposition results after relatively 2 bleed-off passages being stopped and all bleed-off passages are all opened, its deposition results there is no too big-difference (referring to table 2).The design of this used diffuser plate and size all with Fig. 4 B and table 1 in used identical.Silicon nitride layer is the SiH with 3300sccm in the table 2 ₄, 28000sccm NH ₃And 18000sccmN ₂Form following deposition of 1.3 holder ear pressure and 11000 watts of electric power.Distance between this diffuser plate and this substrate support is 0.6 inch.Process temperatures is to maintain 355 ℃.1,2,3,4 and 5 etc. locate (as shown in Figure 5) and measure thicknesses of layers and character thereof in the position respectively.SiH content shown in the table 2 is atom %.

The rete of silicon nitride settled layer when 2 bleed-off passages are opened and blocked to table 2 relatively with whole bleed-off passages

Thickness and character

Bleed-off passage is all opened

Block 2 bleed-off passages

The position	Thickness ()	RI	Stress (10 ⁹Dyne/cm ²)	Si-H (％)	Thickness ()	RI	Stress (10 ⁹Dyne/cm ²)	Si-H (％)
The position	Thickness ()	RI	Stress (10 ⁹Dyne/cm ²)	Si-H (％)	Thickness ()	RI	Stress (10 ⁹Dyne/cm ²)	Si-H (％)	l	6156	1.92	-4.6	11.1	5922	1.93	-3.9	11.5
2	7108	1.91	-5.1	8.8	7069	1.92	-5.1	9.1	l	6156	1.92	-4.6	11.1	5922	1.93	-3.9	11.5
2	7108	1.91	-5.1	8.8	7069	1.92	-5.1	9.1	3	7107	1.91	-5.1	8.5	7107	1.91	-4.8	8.9
4	7052	1.91	-5.0	8.1	7048	1.91	-4.6	8.5	3	7107	1.91	-5.1	8.5	7107	1.91	-4.8	8.9
4	7052	1.91	-5.0	8.1	7048	1.91	-4.6	8.5	5	6173	1.92	-4.2	10.8	6003	1.92	-3.8	11.2

Table 2 result shows thicknesses of layers and the character and the no significant difference of silicon nitride settled layer when whole bleed-off passages are opened and block 2 bleed-off passages.In addition, minimum at the result difference that the 1st and 5 measuring positions are collected, and if entrap bubble is the reason that throws into question, this measuring result should be variant.Therefore, between diffuser plate and substrate and the substrate center zone have excessive entrap bubble and can't effectively be got rid of, thereby cause the theoretical and incorrect of the higher sedimentation rate in substrate center zone and the rete that more tightens.

Causing the inhomogenous another kind of possible cause of middle section and marginal deposit is due to the plasma body heterogeneity.Almost completely decide with the PECVD depositional coating on whether plasma-activated.Because of the former of hollow cathode effect can produce chemical reactivity plasma body closely.The motivating force that a hollow cathode that produces at RF discharges is the DC potential Vs (self-bias) across the frequency modulation of RF electrode space electric charge sheath.Fig. 6 A illustrates the vibratory drive of electronics between the mutually exclusive electric field (Es) of a RF hollow cathode and opposite charges sheath.Electronics from this cathode wall (it can be the wall near this reactant gas passage of this process volume) is launched can be quickened by the electric field Es on this wall sheath " δ ".Because of the cause of electric field mutually exclusive on the opposite wall sheath, make that the electronics between electrode wall can be across this internal space vibration.Electronics is also because of createing more polyion simultaneously with the gas collisions degradedness.The ion of creating out can be accelerated to cathode wall, so as to promoting the emission of secondary electron, to create more polyion.Generally, the lacuna between cathode wall can be strengthened the emission of electronics and dissociating of gas.Tubaeform cathode wall of unfolded and gas inlet diameter be less than the pneumatic outlet diameter, than the more effective history gas ionization of cylindrical wall.Simultaneously, because free different potential difference Ez that also cause of efficient between gas inlet and pneumatic outlet.

By the design in the hollow cathode wall chamber (it is towards substrate and is positioned at gaseous diffusion plate holes (or passage) downstream end) that changes close process volume 212 and the arrangement (or density) in this hollow cathode wall chamber, can change thickness and the character homogeneity of the free degree of this gas so as to the control rete.One of the example of the wall in this hollow cathode chamber of close process volume 212 is second boring 312 that illustrates among Fig. 3.This hollow cathode effect mainly occurs in towards these unfolded loudspeaker of this process volume 212 and hits zone 312.The design of Fig. 3 only is as illustrative usefulness.The present invention also can be applicable in the hollow cathode chamber design of other types.Other examples of hollow cathode chamber design include, but is not limited to the design among the 6B-6G figure.By the volume and/or the surface-area that change this hollow cathode chamber, can change the free speed of plasma body.

The example that is designed to Fig. 3, the volume of second boring 312 (or hollow cathode chambeies) can be changed by changing diameter " D " (or the diameter 336 among Fig. 3), the degree of depth " d " (or the length 332 among Fig. 3) and start point " " (or the start point 316 among Fig. 3), shown in Fig. 7 A.Changing diameter, the degree of depth and start point will cause the surface-area of this boring 312 variation to occur.Because the sedimentation rate of substrate center is higher and rete tightens, be most probably because due to the higher ion volume density.By the combination that reduces drilling depth, diameter, start point or above-mentioned these factors of this diffuser plate from the edge to central authorities, the plasma density that can reduce the substrate center zone is to improve thicknesses of layers and homogeneity thereof.Reduction drilling depth, diameter, start point also can reduce the surface-area of boring 312.7B, 7C and 7D figure demonstrate the design of 3 kinds of diffusion admittances (or diffusion hole), and it is on the diffuser plate that is arranged in shown in Fig. 7 E.The design of 7B, 7C and 7D figure has identical borehole diameter, but this drilling depth and total boring surface are long-pending, are maximum in the design of Fig. 7 B, but are minimum in the design of Fig. 7 D.The start point of this boring has been changed being complementary with final borehole diameter.The drilling depth of Fig. 7 B is 0.7 inch.The drilling depth of Fig. 7 C is that the drilling depth of 0.5 inch and Fig. 7 D is 0.325 inch.Minimum rectangle 710 sizes are that the drilling depth of 500 millimeters * 600 millimeters and this diffusion hole is 0.325 inch among Fig. 7 E, and borehole diameter is 0.302 inch, and start point is 45 to spend (referring to Fig. 7 D).Medium rectangular size is 1000 millimeters * 1200 millimeters among Fig. 7 E.The drilling depth of this diffusion hole in the zone 720 between between this medium rectangle and minimum rectangular region is 0.5 inch, and borehole diameter is 0.302 inch, and start point is 30 degree (referring to Fig. 7 C).Rectangular size maximum among Fig. 7 E is 1500 millimeters * 1800 millimeters.The drilling depth of this diffusion hole in the zone 730 between between this maximum rectangle and this medium rectangular region is 0.7 inch, and borehole diameter is 0.302 inch, and start point is 22 degree (referring to Fig. 7 B).In Fig. 7 B, 7C and 7D, the diameter of this opening hole is 0.03 inch, and the hole degree of depth is 0.2 inch.The thickness of three kinds of diffuser plates is 1.44 inches.The diameter of first boring is 0.156 inch and its degree of depth and is respectively 0.54 inch (Fig. 7 B), 0.74 inch (Fig. 7 C) and 0.915 inch (Fig. 7 C) among 7B, 7C and the 7D figure.

Sedimentation rate on Fig. 8 display base plate.Area I is the area of representative under 0.325 inch drilling depth, and area I I and III then represent the area under 0.5 inch degree of depth (area I I) and the 0.7 inch degree of depth (area I II) respectively.Measured thicknesses of layers and homogeneity thereof on table 3 display base plate.Silicon nitride film layer in the table 3 is with the SiH with 3300sccm ₄, 28000sccm NH ₃And 18000sccm N ₂Form following deposition of 1.3 holder ear pressure and 11000 watts of electric power.Distance between this diffuser plate and this substrate support is 0.6 inch.Process temperatures is to maintain 355 ℃.It is as shown in Figure 5 that

position

1,2,3,4 and 5 etc. is located.

Table 3 relatively deposits the rete of this silicon nitride settled layer with the diffuser plate with 3 kinds of different depthss

Thickness and character

The measuring position	Drilling depth (inch)	Thickness ()	RI	Stress (10 ⁹Dyne/cm ²)	Si-H (atom %)
The measuring position	Drilling depth (inch)	Thickness ()	RI	Stress (10 ⁹Dyne/cm ²)	Si-H (atom %)	l	0.7	6060	1.924	-4.09	9.10
2	0.5	6631	1.921	-5.49	9.66	l	0.7	6060	1.924	-4.09	9.10
2	0.5	6631	1.921	-5.49	9.66	3	0.325	5659	1.915	-2.02	12.34
4	0.5	6956	1.916	-5.45	9.37	3	0.325	5659	1.915	-2.02	12.34
4	0.5	6956	1.916	-5.45	9.37	5	0.7	6634	1.917	-4.14	8.83

Table 3 result shows that reduction drilling depth and the long-pending meeting of boring surface reduce sedimentation rate.In addition, table 3 result shows that also the volume and/or the surface-area that reduce the hollow cathode chamber also can reduce sedimentation rate.On behalf of the plasma body ionization rate, plasma-deposited speed reduces reduce.Since from area I to area I I to the long-pending change of the drilling depth of area I II and total boring surface and inhomogeneous, therefore shown in sedimentation rate on the substrate also show 3 kinds of different zones.Area I, II and III meet this diffusion hole zone 710,720 and 730 on the substrate.The free speed of this representative change hollow cathode chamber design can change plasma body, and importance level and smooth and that progressively change.

There are many methods to change the hollow cathode chamber step by step all once to improve plasma body from this diffuser plate interior region to this diffuser plate external region.One of mode is earlier this diffuser plate (it has identical gas diffusion paths on whole diffuser plate) to be bent to a predetermined curvature, curvature is polished so that this surface flattens smooth more afterwards.Fig. 9 A is the schema of idea for this reason.This processing is to make it become a curvature to begin in step 901 with crooked this diffuser plate, then in step 902 should bending diffuser plate polish once again and make this diffuser plate surface just smooth once again.Fig. 9 B shows a diffuser plate with curvature, and (and external region) and central authorities' (and interior region) have an illustrative diffusion hole 911 and 912 respectively at its edge.Before bending step, this diffusion hole 911 and 912 is identical and is illustrated in simply among Fig. 3 and Fig. 7 A.But the present invention can be used in any diffusion hole design.The design of Fig. 3 only is an illustration.Diffuser plate downstream surface 304 is towards process volume 212.Between this 913 surface and this surface 914 of fabricating (representing with dotted line), progressively change so that its curvature to be shown because of there not being event.Before bending, the size and the shape of this edge diffusion boring 915 and central authorities' diffusion boring 916 are the same.Fig. 9 C is the synoptic diagram of the diffuser plate after a curvature has been polished by machinery.Worn into a flat surfaces 914 towards the surface of this process volume 212, made that central bore 918 obviously must be short than end hole 917.Owing to boring size (volume and/or surface-area) is by elder generation the mode that polishes again after the diffuser plate bending to be changed, therefore the volume change from the edge, central road of holing is progressively.The diameter of central bore 918 " D " and the degree of depth " d " will must be short than end hole 917.The diameter " D " of boring and the definition of the degree of depth " d " can be referring to the character narrates of Fig. 7 A.

Fig. 9 D illustrates the degree of depth " d " of the boring 312 that extends to an illustrative diffuser plate downstream side, and this diffuser plate is to be used to handle 1500 millimeters * 1850 millimeters substrates use.This diffuser plate has the design of the diffusion hole shown in Fig. 7 A.The diameter of this first boring 310 is 0.156 inch.The length 330 of first boring 310 is 1.049 inches.The diameter of this second boring 312 is 0.250 inch.The start point of this second boring 312 is 22 degree.The length 332 of this second boring 312 is 0.243 inch.The diameter of this opening hole 314 is that the length of 0.016 inch and this this opening hole 314 is 0.046 inch.The depth survey of second boring shows that a drilling depth 332 (or " d " among Fig. 7 A) is the progressively edge increase of past diffuser plate of central authorities from diffuser plate among Fig. 9 D.Because crooked and polish processing, the diameter 336 of this diffuser plate 312 (or " D " among Fig. 7 A) equally also is that the central authorities from diffuser plate progressively increase toward the edge of diffuser plate.

Fig. 9 E shows that the diffuser plate to have as the design of 9B, 9C and 9D figure carries out on the sedimentary substrate of silicon nitride film the thickness distribution situation of its depositional coating.The size of institute's processing substrate is 1500 millimeters * 1850 millimeters, and it is only big slightly than the substrate in Fig. 4 B and the table 1 (1500 millimeters * 1800 millimeters).In general, the size of diffuser plate must be done suitable adjustment with the change of processing size of substrate.The size that is used for handling the diffuser plate of 1500 millimeters * 1850 millimeters big or small substrates is 1530 millimeters * 1860 millimeters, and it is than the substrate that is used for handling these 1500 millimeters * 1800 millimeters sizes big (its diffuser plate is 1530 millimeters * 1829 millimeters) slightly.The homogeneity of thickness improves 5.0%, comes lowly far beyond 25.1% the ratio of Fig. 4 B.The distribution of membranous layer property on table 4 display base plate.This diffuser plate has the design of the diffusion hole shown in Fig. 7 A.The diameter of this first boring 310 is 0.156 inch.The length 330 of first boring 310 is 1.049 inches.The diameter of this second boring 312 is 0.250 inch.The start point of this second boring 312 is 22 degree.The length 332 of this second boring 312 is 0.243 inch.The diameter of this opening hole 314 is that the length of 0.016 inch and this this opening hole 314 is 0.046 inch.Silicon nitride film layer in Fig. 9 E and the table 4 is with the SiH with 2800sccm ₄, 9600sccm NH ₃And 28000sccm N ₂Form following deposition of 1.5 holder ear pressure and 15000 watts of electric power.Distance between this diffuser plate and this substrate support is 1.05 inches.Process temperatures is to maintain 355 ℃.Edge I and edge II represent two ends of substrate respectively, and as described in Table 1.Compared to the data of table 1, the thicknesses of layers of table 4 and character data show the variation numerical value of less central authorities to the edge.

Table 4 is relatively handled with the diffuser plate with central authorities stepping drilling depth and diameter to the edge

1500 millimeters * 1850 millimeters substrates, the thickness of sedimentary silicon nitride film layer and character on this substrate

The measuring position	Thickness ()	RI	Stress (10 ⁹Dyne/cm ²)	Si-H (atom %)	WER (/ minute)
The measuring position	Thickness ()	RI	Stress (10 ⁹Dyne/cm ²)	Si-H (atom %)	WER (/ minute)	Edge I	6405	1.92	-0.7	13.3	451
Central authorities	6437	1.91	-1.8	12.7	371	Edge I	6405	1.92	-0.7	13.3	451
Central authorities	6437	1.91	-1.8	12.7	371	Edge II	6428	1.92	-1.2	11.9	427

The data of comparison sheet 4 and table 1, these data are to collect in deposition process at the diffuser plate that has identical boring 312 diameters and the degree of depth on the diffuser plate, no matter can find variation, stress, Si-H content and the wet etching speed (WER) of thickness, the value data of table 1 is all come to such an extent that lack than the numerical value of table 4, table 4 data be to be data collected when the diffuser plate that diffuser plate central authorities progressively increase toward the edge deposits to have the borehole diameter and the degree of depth.This result shows that the thickness of rete and homogeneity can be by progressively increasing the diameter of boring from central authorities toward the edge and the mode of the degree of depth is improved, and these borings are to extend to this diffuser plate downstream.Wet etching speed in the table is to measure in 6: 1 solution that sample are immersed in a BOE.

Fig. 9 F is presented at the measuring result of the degree of depth " d " of boring 312 on the illustrative diffuser plate, and this diffuser plate is to be used for handling 1870 millimeters * 2200 millimeters substrates, and curve 960 is presented at the example that a desirable drilling depth distributes on this diffuser plate.The measurement of this drilling depth shows that drilling depth is progressively to increase from the past edge of the central authorities of diffuser plate among Fig. 9 F.And its downstream borehole diameter is progressively to be increased by the past edge of the central authorities of diffuser plate too.

Fig. 9 G shows that the diffuser plate to have similar 9B, 9C and 9F figure design comes treatment substrate, the thickness distribution of sedimentary silicon nitride film layer on this substrate.The size of this substrate is 1870 millimeters * 2200 millimeters.The distribution situation of membranous layer property on table 5 display base plate.This diffuser plate has the design of the diffusion hole shown in Fig. 7 A.The diameter of this first boring 310 is 0.156 inch.The length 330 of first boring 310 is 0.915 inch.The diameter of this second boring 312 is 0.302 inch.The start point 316 of this second boring 312 is 22 degree.The length 332 of this second boring 312 is 0.377 inch.The diameter of this opening hole 314 is that the length of 0.018 inch and this this opening hole 314 is 0.046 inch.Silicon nitride film layer in the table 5 is with the SiH with 5550sccm ₄, 24700sccm NH ₃And 61700sccm N ₂Form following deposition of 1.5 holder ear pressure and 19000 watts of electric power.Distance between this diffuser plate and this substrate support is 1.0 inches.Process temperatures is to maintain 355 ℃.Edge I and edge II represent two ends of substrate respectively, and as described in Table 1.Compared to the data of table 1, the thicknesses of layers of table 5 and character data show the variation numerical value of less central authorities to the edge.Rete all once be 9.9%, it must be got well than 25.1% of Fig. 4 B.Compared to substrate (1870 millimeters * 2200 millimeters) data of Fig. 9 G and table 5, the data of Fig. 4 B and table 1 are thicknesses of layers and the homogeneity that records on less substrate (1500 millimeters * 1800 millimeters).Expection is concerning bigger substrate, and it is poor that its thicknesses of layers and homogeneity will become.In the table 5 with new designing institute record 9.9% all once should new design with the membranous layer property data presentation of improvement, the borehole diameter and the degree of depth that promptly extend on the diffuser plate in diffuser plate downstream side are progressively increased toward the edge by diffuser plate central authorities, can significantly improve plasma body homogeneity and processing procedure homogeneity.

Table 5 is relatively handled with the diffuser plate with central authorities stepping drilling depth and diameter to the edge

1870 millimeters * 2200 millimeters substrates, the thickness of sedimentary silicon nitride film layer and character on this substrate

The measuring position	Thickness ()	RI	Stress (10 ⁹Dyne/cm ²)	Si-H (atom %)	WER (/minute)
The measuring position	Thickness ()	RI	Stress (10 ⁹Dyne/cm ²)	Si-H (atom %)	WER (/minute)	Edge I	5814	1.94	-0.3	16.4	509
Central authorities	5826	1.93	0.8	17.3	716	Edge I	5814	1.94	-0.3	16.4	509
Central authorities	5826	1.93	0.8	17.3	716	Edge II	5914	1.92	-0.6	13.9	644

Though shown diffuser plate is an oblong-shaped, the present invention also can be applicable on the diffuser plate of other shapes and size.The curvature that is noted that this downstream surface must be worn into smooth fully.Central authorities progressively increase toward the edge as long as the diameter of boring and the degree of depth are the self-diffusion plate, and the edge of this diffuser plate can not need to be polished.

Also have many modes on this diffuser plate, to create curvature.One of mode is to support this diffuser plate edge and this diffuser plate is being enough to make thermal treatment under this diffuser plate remollescent temperature (for example greater than 400 ℃ temperature (for aluminium)) for some time with cover keep lever.When the metal diffusing plate after softening under the pyroprocessing, gravity can make diffuser plate central authorities toward sagging bob diffuser plate be buckled.Figure 10 A shows the heat treated processing flow chart 1000 of this class.At first, will have the diffusion hole in step 1001 and be seated in the environment 1005 or the process chamber of temperature controllable, and diffuser plate 1010 will be placed on (referring to Figure 10 B) on the cover keep lever 1020 that can only support this diffuser plate edge in wherein diffuser plate.Prone diffuser plate is the downstream side 304 of this diffuser plate.After step 1002, envrionment temperature raise and handle this diffuser plate under this diffuser plate remollescent temperature can making.In case an embodiment is this when reaching a steady temperature, promptly keeps this heating environment under this homothermic treatment temp.The curvature for the treatment of this diffuser plate reaches when desiring to ask curvature, promptly stops heat treatment step (step 1003).Notice under heating environment, can with one optionally diffuser plate cover keep lever 1030 be seated in diffuser plate 1010 next than also low bearing height 1035 of the bearing height 1025 of this cover keep lever 1020 and support distances 1037 places also shorter than the support distances 1027 of this cover keep lever 1020.This optionally diffuser plate cover keep lever 1030 can help to determine this scatterer curvature and can ability more than 400 ℃ high temperature (temperature identical) and the resilient material that can not injure this diffuser plate surface with heat treatment environment make.Figure 10 C shows the diffuser plate 1010 of the heat treated bending of process that is seated in this diffuser plate cover keep lever 1020 and 1030.

The another kind of mode of creating curvature is to use vacuum smoothly this diffuser plate is bent to a convex shape.Figure 11 A shows the flow process 1100 that this class is handled with vacuum process.At first, in step 1101, this has been had the diffusion hole in wherein and these downstream side 304 ventricumbent diffuser plates, be placed on the vacuum subassembly 1105 and with a lid with these diffuser plate upstream extremity 302 sealings.The physical strength that is used for covering the material of (or sealing) this diffuser plate upstream extremity must be enough to keep its integrity under vacuum.This vacuum subassembly only supports this substrate (referring to Figure 11 B) with diffuser plate holder 1120 at the substrate edges place.This vacuum subassembly 1105 is to be designed to have a vacuum tunnel 1150 with when the lining of this diffuser plate upstream extremity covers, and the volume 1115 between 1105 of this diffuser plate and this vacuum subassemblies is vacuumized.Vacuum tunnel 1150 among 11B and the 11C figure only is to be used for setting forth this notion.More than one vacuum tunnel 1150 can be arranged, be arranged in the different positions place of this vacuum subassembly 1105.In step 1102, will vacuumize afterwards between the volume 1115 between this diffuser plate and this diffuser plate holder.When the curvature arrival of this diffuser plate is desired to ask curvature, stop this step that vacuumizes and will be extremely identical at step 1103 place, can shift out from this vacuum subassembly 1105 to allow this diffuser plate with surrounding environment 1140 between the pressure recovery of the volume 1115 between this diffuser plate and this vacuum subassembly.Need know in this vacuum subassembly, extra diffuser plate cover keep lever 1120 can be placed under this diffuser plate 1,110 one than lower bearing height 1135 of the bearing height 1125 of this diffuser plate cover keep lever 1120 and support distances 1137 places shorter than the support distances 1127 of this cover keep lever 1120.This extra diffuser plate cover keep lever 1120 can help to stop this diffuser plate curvature and can be made by the material that can not injure the diffuser plate surface such as rubber.Figure 11 C shows through being seated in the diffuser plate that curvature is arranged 1110 on this diffuser plate cover keep lever 1120 and 1130 after the bending.

The another kind of mode that changes the combination of this downstream taper shape (312 among Fig. 3) degree of depth, conical diameter, conical start point or these three kinds of parameters is that this diffusion hole is drilled to the different conical degree of depth, conical diameter, the conical start point toward the edge by these diffuser plate central authorities.The action of this boring can be reached by the mode that computer numeral formula control (CNC) grinds.Figure 12 A shows the processing flow chart of this class processing 1200.This handles 1200 from step 1230, may extend into the degree of depth that having of diffuser plate downstream side progressively increase from the past edge of diffuser plate central authorities and/or the boring of diameter by createing.This start point also can progressively change toward the edge from diffuser plate central authorities.Then, create the residue part of this diffuser plate gas passage in step 1240.Can create downstream boring by boring bar tool.If use the boring bar tool with identical start point on whole diffuser plate, then Zuan Kong start point will keep constant, and drilling depth and diameter then can be changed.This borehole diameter can be decided by this start point and drilling depth.What urn was wanted is smoothly and step by step to change this drilling depth to guarantee having level and smooth deposit thickness and rete homogeneity on the whole base plate.Figure 12 B illustrates an example with different drilling depths and diameter.Diffusion hole 1201 is near these diffuser plate central authorities and has minimum drilling depth 1211 and borehole diameter 1221.Diffusion hole 1202 is between these diffuser plate central authorities and edge and has medium drilling depth 1212 and medium borehole diameter 1222.Diffusion hole 1203 is near this diffuser plate edge and has maximum drilling depth 1213 and maximum borehole diameter 1223.Conical start point to all diffusion holes in Figure 12 B design is all identical.But, also can make the deposition homogeneity reach optimizing by changing the design of holing on the diffuser plate, it is to reach by the mode of the degree of depth, diameter and the start point that change boring.The degree of depth, diameter and the start point that change boring can influence the surface-area of all drilled hole, also can influence this hollow cathode effect simultaneously.The long-pending free efficient that can reduce this plasma body of less boring surface.

The degree of depth (d) of another kind of change downstream boring (312 among Fig. 3), the mode of diameter (D) are by get out identical diffusion hole (referring to Figure 12 C) on whole diffuser plate.In Figure 12 C, the gaseous diffusion hole 1251 of this diffuser plate edge (external region) is identical with the gaseous diffusion hole 1252 of these diffuser plate central authorities (interior region).This downstream boring 1255 is to hole 1256 identical with this downstream.This downstream surface 1254 of gas diffusion plate is smooth at the beginning.Afterwards, grinding this diffuser plate downstream side makes its central authorities come thinly than the edge to make a concave surface.This grind can by computer numeral formula control (CNC) grind mode or other may command and constantly multiple grind the type mode and reach.After this downstream surface 1254 was ground into a concave surface (face 1259), the downstream boring 1257 littler diameters (D) that the downstream of diffuser plate central authorities (interior region) boring 1258 has than diffuser plate edge (external region) reached shorter length (d).It is constant to allow this diffuser plate keep such mode as Figure 12 D, or can as Figure 12 E downstream face 1259 be evened up, or pulls into other curvature (not shown), reaches the rete result who desires to ask to be used for a deposition chamber.

The degree of depth (d) of another kind of change downstream boring (312 among Fig. 3), the mode of diameter (D) are by the top diffuser plate that does not spread hole being curved a concave (referring to Figure 12 F).In Figure 12 F, this downstream face is the face of fabricating 1269.Afterwards, get out downstream boring (referring to Figure 12 G) from this face 1264 of fabricating with boring bar tool with same depth.Though in the boring of the downstream of these diffuser plate central authorities is to begin to be drilled into and this downstream 1267 same depth of holing from this face 1264 of fabricating, the diameter of this downstream boring 1268 and length are come for a short time than the diameter and the length of this downstream boring 1267.Remaining diffusion hole comprises opening hole 1265, upstream boring 1263 and connects the bottom, is polished to finish this diffusion hole.Whole opening holes and upstream boring all should have same diameter, though be not certain necessity.Also need keep the diameter of this opening hole on the whole diffuser plate the same with length (shown in Figure 12 G).This opening hole is controlled this back pressure.The same with length by the diameter that keeps this opening hole on the whole diffuser plate, the back pressure that also can make this meeting on the whole diffuser plate influence air-flow is held certain.It is constant to allow this diffuser plate keep such mode as Figure 12 G, or can as Figure 12 H downstream face 1269 be evened up, or pulls into other curvature (not shown), reaches the rete result who desires to ask to be used for a deposition chamber.

Change the diameter and/or the length in hollow cathode chamber toward the edge from diffuser plate central authorities, this change also needs not be change perfect, continuous regime, as long as this variation is smoothly and progressively.Also can be by several homogeneous area configurations being become the mode of coaxial pattern (concentric pattern) reach, as long as the variation from a zone to another zone is smoothly and progressively.But generally, the size in hollow cathode chamber (volume and/or surface-area) must increase toward the edge from diffuser plate central authorities.Figure 12 I shows a diffuser plate bottom schematic view (looking down from the downstream side).This diffuser plate is distinguished into N area on-axis.Area on-axis is the area that is defined as between between an inside and an outside boundary line, and it has and the identical geometrical shape of whole diffuser plate shape.To regional N, the size in this hollow cathode chamber (volume and/or surface-area) progressively increases from zone 1.This increase can be reached by the mode of the combination of the diameter, length, start point or these factors that improve this hollow cathode chamber.

Diameter from diffuser plate central authorities toward increase hollow cathode chamber, edge and/or this part thing of length do not need whole diffusion holes effective, as long as the overall dimensions in the hollow cathode chamber of each downstream diffuser plate surface-area has increased.For instance, can keep the size of some diffusion hole on the diffuser plate constant all the time, the size that simultaneously other is spread the hollow cathode chamber of holes is progressively increased toward the edge by diffuser plate central authorities.In another embodiment, the hollow cathode chamber that (volume and/or surface-area) progressively increased when this diffusion hole had Foot then has very little hollow cathode chamber on the diffuser plate edge, simultaneously shown in Figure 12 J.In another embodiment, the volume in most hollow cathode chamber is a uniformity on diffuser plate, has only the very large hollow cathode of a small amount of size chamber to be positioned at diffuser plate marginal position place, shown in Figure 12 K.

We are defined as the volume in hollow cathode chamber this central authorities' cathode cavity volume of each downstream diffusion hole surface-area of central cathode cavity.Similarly, also the central cathode cavity surface area density of central cathode cavity can be defined as this central authorities' cathode cavity surface-area of each downstream diffusion hole surface-area of central cathode cavity.The above results shows that plasma body and processing procedure homogeneity can be improved toward this central authorities' cathode cavity volume of an external region or mode that should central authorities' cathode cavity surface area density by progressively increasing by diffuser plate one interior region.

The another kind of method that changes thicknesses of layers and character homogeneity is the diffusion hole density that changes on the diffuser plate, but it is constant to keep the design of spreading hole itself.The density of diffusion hole can be calculated and get divided by the total surface area in diffuser plate downstream side 304 in the measured zone by total well table area of the boring 312 that will intersect with downstream side 304.The density of diffusion hole can be 10% to 100% variation, and is preferably 30% to 100% variation." dome-shaped (dome shaped) " problem occurs for reducing rete, compared to the external region, the diffusion hole density of interior region needs lower, to reduce the plasma density of interior region.The zone must be progressively and smoothly to the variable density of external region internally, has homogeneous and level and smooth thickness and character to guarantee depositional coating.Figure 13 shows that diffusion hole density is from the highdensity progressively variation of (area B) to the edge of the low density of central authorities (regional A).Can reduce plasma density and " dome-shaped (dome shaped) " problem of middle section at the low density diffusion hole of middle section.The arrangement of the diffusion hole of Figure 13 only is to be used for showing how increasing diffusion hole density toward the edge from central authorities.The present invention can use the arrangement and the pattern of any diffusion hole.The idea of variable density also can be used in combination together with the idea that changes the design of diffusion hole, improves the homogeneity toward the edge by central authorities.When the density that changes gas passage is reached the plasma body homogeneity, the distance between downstream end hollow cathode chamber can be above 0.6 inch.

The present invention can had or not have under the diffusion of the change hole density by diffuser plate central authorities progressively increase hollow cathode chamber size (volume and/or surface-area) toward the edge idea, with any one of crooked diffuser plate and arbitrary available hollow cathode chamber method for grinding, reach by any one mode of combination hollow cathode chamber size (volume and/or surface-area) and change of shape.For instance, progressively increase the diameter that the idea that spreads hole density can be used to progressively be increased toward the edge by diffuser plate central authorities this hollow cathode chamber (or downstream boring) toward the edge by diffuser plate central authorities.Can keep diffuser plate smooth and get out the diffusion hole with the CNC method.The available array mode has many kinds.Therefore, such idea can reach the requirement of satisfying thicknesses of layers and character homogeneity.

So far, various embodiments of the invention are all setting forth length and the diameter that how is progressively increased the hollow cathode chamber by diffuser plate central authorities toward the edge, to improve the plasma body homogeneity on the substrate.But some situation is progressively to reduce the length in hollow cathode chamber and diameter toward the edge by diffuser plate central authorities.For example, too low near the electric power of substrate center, therefore need bigger hollow cathode chamber to compensate this lower electric power.Therefore, idea of the present invention also can be used on the situation that is progressively reduced the size (volume and/or surface-area) in hollow cathode chamber by diffuser plate central authorities toward the edge.

Idea of the present invention can be applicable in the design of any gaseous diffusion hole, and it comprises the design in any hollow cathode chamber, the design of any gas diffusion plate shape/size.Idea of the present invention can be applicable on the gas diffusion plate of any use multiple gases diffusion hole design.Idea of the present invention also can be applicable on the diffuser plate that has any curvature and make with any material (for example aluminium, tungsten, chromium, tantalum or its combination), any method (for example cast, knock, forging, hot pressing or calcination).Idea of the present invention also can be applicable on the gas diffusion plate of the layer that has the multilayer compacting or be bonded together.In addition, the present invention also can be applicable in the deposition chamber of a cluster system, an independent using system, a connection system (an in-line system) or arbitrary available system.

Though the present invention illustrated clearly and illustrated with embodiments of the invention, have the knack of this skill person with apprehensible be that above-mentioned other form and the change on the details on form and details can be reached not departing under scope of the present invention and the spirit.Therefore, reach illustrated particular form and details shown in the present invention is not limited to, but drop on by in the following scope that claim defined.

Claims

1. gas distribution plate assembly that the plasma process chamber is used, it comprises at least:

One diffuser plate element, it has a upstream side and a downstream side; And

Inside and extraneous gas passage, it is that wherein each gas passage has between the upstream side and downstream side of this diffuser plate element:

The opening hole, it has equally distributed length and the diameter that is enough to promote the gas on this upstream side; And

The hollow cathode chamber, it is the downstream of described opening hole and is positioned at described downstream side;

Wherein said hollow cathode chamber be coning or the cylinder bodily form and should taper shape or the two combination of tubular diameter or the degree of depth or this be that central authorities from this diffuser plate element progressively increase toward the edge, and the size in the hollow cathode chamber of this internal gas passage is less than the size in the hollow cathode chamber of this extraneous gas passage.

2. gas distribution plate assembly as claimed in claim 1 is characterized in that this taper shape or tubular diameter are between 0.1 inch to 1.0 inches.

3. gas distribution plate assembly as claimed in claim 1 is characterized in that this taper shape or tubular diameter are between 0.1 inch to 0.5 inch.

4. gas distribution plate assembly as claimed in claim 1 is characterized in that this taper shape or the tubular degree of depth are between 0.1 inch to 2.0 inches.

5. gas distribution plate assembly as claimed in claim 1 is characterized in that this taper shape or the tubular degree of depth are between 0.1 inch to 1.0 inches.

6. gas distribution plate assembly as claimed in claim 1 is characterized in that the start point in this taper shape is between 50 degree between 10 degree.

7. gas distribution plate assembly as claimed in claim 1 is characterized in that this conical start point is between 40 degree between 20 degree.

8. gas distribution plate assembly as claimed in claim 1, it is characterized in that this taper shape or tubular diameter are between 0.1 inch to 1.0 inches, this taper shape or the tubular degree of depth are between 0.1 inch to 2.0 inches, and this conical start point is between 50 degree between 10 degree.

9. gas distribution plate assembly as claimed in claim 1 is characterized in that the space length between the downstream end in hollow cathode chamber of adjacent gas passage is at most 0.6 inch.

10. gas distribution plate assembly as claimed in claim 1, the thickness that it is characterized in that this diffuser plate element are between 0.8 inch to 3.0 inches.

11. gas distribution plate assembly as claimed in claim 1 is characterized in that this diffuser plate element is a rectangle.

12. gas distribution plate assembly as claimed in claim 11 is characterized in that the size of this diffuser plate element is at least 1,200,000 square millimeter.

13. gas distribution plate assembly as claimed in claim 1 is characterized in that the two combination of this taper shape or tubular diameter or the degree of depth or this is that central authorities from this diffuser plate element progressively increase toward the edge.

14. gas distribution plate assembly as claimed in claim 1 is characterized in that this gas passage promotes to flow by its even of gas.

15. gas distribution plate assembly as claimed in claim 1 is characterized in that the configuration equably among this gas passage of this opening hole.

16. gas distribution plate assembly as claimed in claim 1 is characterized in that the configuration unevenly among this gas passage of this opening hole.

17. the gas distribution plate assembly that the plasma process chamber is used, it comprises at least:

One diffuser plate element, it has a upstream side and a downstream side; And

The opening hole, it has length and the diameter that is enough to promote even back pressure; And

Wherein said hollow cathode chamber be coning or the cylinder bodily form and should taper shape or the two combination of tubular diameter or the degree of depth or this be that central authorities from this diffuser plate element progressively increase toward the edge, and the surface area density in the hollow cathode chamber of this internal gas passage is lower than the surface area density in the hollow cathode chamber of this extraneous gas passage.

18. gas distribution plate assembly as claimed in claim 17 is characterized in that this taper shape or tubular diameter are between 0.1 inch to 1.0 inches.

19. gas distribution plate assembly as claimed in claim 17 is characterized in that this taper shape or tubular diameter are between 0.1 inch to 0.5 inch.

20. gas distribution plate assembly as claimed in claim 17 is characterized in that this taper shape or the tubular degree of depth are between 0.1 inch to 2.0 inches.

21. gas distribution plate assembly as claimed in claim 17 is characterized in that this taper shape or the tubular degree of depth are between 0.1 inch to 1.0 inches.

22. gas distribution plate assembly as claimed in claim 17 is characterized in that this conical start point is between 50 degree between 10 degree.

23. gas distribution plate assembly as claimed in claim 17 is characterized in that this conical start point is between 40 degree between 20 degree.

24. gas distribution plate assembly as claimed in claim 17, it is characterized in that this taper shape or tubular diameter are between 0.1 inch to 1.0 inches, this taper shape or the tubular degree of depth are between 0.1 inch to 2.0 inches, and this conical start point is between 50 degree between 10 degree.

25. gas distribution plate assembly as claimed in claim 17 is characterized in that the space length between the downstream end in hollow cathode chamber of adjacent gas passage is at most 0.6 inch.

26. gas distribution plate assembly as claimed in claim 17, the thickness that it is characterized in that this diffuser plate element are between 0.8 inch to 3.0 inches.

27. gas distribution plate assembly as claimed in claim 17 is characterized in that this diffuser plate element is a rectangle.

28. gas distribution plate assembly as claimed in claim 27 is characterized in that the size of this diffuser plate element is at least 1,200,000 square millimeter.

29. gas distribution plate assembly as claimed in claim 17 is characterized in that the two combination of this taper shape or tubular diameter or length or this is that central authorities from this diffuser plate element progressively increase toward the edge.

30. gas distribution plate assembly as claimed in claim 17 is characterized in that this gas passage promotes to flow by its even of gas.

31. gas distribution plate assembly as claimed in claim 17 is characterized in that the configuration equably among this gas passage of this opening hole.

32. gas distribution plate assembly as claimed in claim 17 is characterized in that the configuration unevenly among this gas passage of this opening hole.

33. the gas distribution plate assembly that the plasma process chamber is used, it comprises at least:

One diffuser plate element, it has a upstream side and a downstream side; And

A plurality of gas passages, it is that wherein each gas passage has between the upstream side and downstream side of this diffuser plate element:

The hollow cathode chamber, it is the downstream of described opening hole and intersects with the downstream side of this diffuser plate element;

Wherein said hollow cathode chamber be coning or the cylinder bodily form and should taper shape or the two combination of tubular diameter or the degree of depth or this be that central authorities from this diffuser plate element progressively increase toward the edge, the density in this hollow cathode chamber increases toward the edge gradually from the central authorities of this diffuser plate element, and the surface area density in the volume density in this hollow cathode chamber or this hollow cathode chamber increases from the past edge of the central authorities of this diffuser plate element.

34. gas distribution plate assembly as claimed in claim 33, the density that it is characterized in that this diffusion hole are between 10% to 100%.

35. gas distribution plate assembly as claimed in claim 33, the density that it is characterized in that this diffusion hole are between 30% to 100%.

36. gas distribution plate assembly as claimed in claim 33, the conical or tubular diameter that it is characterized in that being positioned at this downstream end is between 0.1 inch to 1.0 inches.

37. gas distribution plate assembly as claimed in claim 33, the conical or tubular diameter that it is characterized in that being positioned at this downstream end is between 0.1 inch to 0.5 inch.

38. gas distribution plate assembly as claimed in claim 33 is characterized in that this taper shape or the tubular degree of depth are between 0.1 inch to 2.0 inches.

39. gas distribution plate assembly as claimed in claim 33 is characterized in that this taper shape or the tubular degree of depth are between 0.1 inch to 1.0 inches.

40. gas distribution plate assembly as claimed in claim 33 is characterized in that this conical start point is between 50 degree between 10 degree.

41. gas distribution plate assembly as claimed in claim 33 is characterized in that this conical start point is between 40 degree between 20 degree.

42. gas distribution plate assembly as claimed in claim 33, it is characterized in that this taper shape or tubular diameter are between 0.1 inch to 1.0 inches, this taper shape or the tubular degree of depth are between 0.1 inch to 2.0 inches, and this conical start point is between 50 degree between 10 degree.

43. gas distribution plate assembly as claimed in claim 33, the thickness that it is characterized in that this diffuser plate element are between 0.8 inch to 3.0 inches.

44. gas distribution plate assembly as claimed in claim 33 is characterized in that this diffuser plate element is a rectangle.

45. gas distribution plate assembly as claimed in claim 44 is characterized in that the size of this diffuser plate element is at least 1,200,000 square millimeter.

46. gas distribution plate assembly as claimed in claim 33 is characterized in that this gas passage promotes to flow by its even of gas.

47. gas distribution plate assembly as claimed in claim 33 is characterized in that the configuration equably among this gas passage of this opening hole.

48. gas distribution plate assembly as claimed in claim 33 is characterized in that the configuration unevenly among this gas passage of this opening hole.

49. a plasma process chamber, it comprises at least:

One diffuser plate element, it has a upstream side and a downstream side;

One RF power supply, it is to be coupled to this diffuser plate element;

Wherein said hollow cathode chamber be coning or the cylinder bodily form and should taper shape or the two combination of tubular diameter or the degree of depth or this be that central authorities from this diffuser plate element progressively increase toward the edge, and the size in the hollow cathode chamber of this internal gas passage is less than the size in the hollow cathode chamber of this extraneous gas passage; And

One base plate supports device, it is the downstream side of contiguous this diffuser plate element.

50. plasma process as claimed in claim 49 chamber is characterized in that this taper shape or tubular diameter are between 0.1 inch to 1.0 inches.

51. plasma process as claimed in claim 49 chamber is characterized in that this taper shape or the tubular degree of depth are between 0.1 inch to 2.0 inches.

52. plasma process as claimed in claim 49 chamber is characterized in that this conical start point is between 50 degree between 10 degree.

53. plasma process as claimed in claim 49 chamber, it is characterized in that this taper shape or tubular diameter are between 0.1 inch to 1.0 inches, this taper shape or the tubular degree of depth are between 0.1 inch to 2.0 inches, and this conical start point is between 50 degree between 10 degree.

54. plasma process as claimed in claim 49 chamber is characterized in that the space length between the downstream end in hollow cathode chamber of adjacent gas passage is at most 0.6 inch.

55. plasma process as claimed in claim 49 chamber, the thickness that it is characterized in that this diffuser plate element are between 0.8 inch to 3.0 inches.

56. plasma process as claimed in claim 49 chamber is characterized in that this diffuser plate element is a rectangle.

57. plasma process as claimed in claim 56 chamber is characterized in that the size of this diffuser plate element is at least 1,200,000 square millimeter.

58. plasma process as claimed in claim 49 chamber is characterized in that the two combination of this taper shape or tubular diameter or length or this is that central authorities from this diffuser plate element progressively increase toward the edge.

59. plasma process as claimed in claim 49 chamber is characterized in that this gas passage promotes to flow by its even of gas.

60. plasma process as claimed in claim 49 chamber is characterized in that the configuration equably among this gas passage of this opening hole.

61. plasma process as claimed in claim 49 chamber is characterized in that the configuration unevenly among this gas passage of this opening hole.

62. a plasma process chamber, it comprises at least:

One diffuser plate element, it has a upstream side and a downstream side;

One RF power supply, it is to be coupled to this diffuser plate element;

Wherein said hollow cathode chamber be coning or the cylinder bodily form and should taper shape or the two combination of tubular diameter or the degree of depth or this be that central authorities from this diffuser plate element progressively increase toward the edge, and the surface area density in the hollow cathode chamber of this internal gas passage is the volume density that is lower than the hollow cathode chamber of this extraneous gas passage; And

63. plasma process as claimed in claim 62 chamber is characterized in that this taper shape or tubular diameter are between 0.1 inch to 1.0 inches.

64. plasma process as claimed in claim 62 chamber is characterized in that this taper shape or the tubular degree of depth are between 0.1 inch to 2.0 inches.

65. plasma process as claimed in claim 62 chamber is characterized in that this conical start point is between 50 degree between 10 degree.

66. plasma process as claimed in claim 62 chamber, it is characterized in that this taper shape or tubular diameter are between 0.1 inch to 1.0 inches, this taper shape or the tubular degree of depth are between 0.1 inch to 2.0 inches, and this conical start point is between 50 degree between 10 degree.

67. plasma process as claimed in claim 62 chamber is characterized in that the space length between the downstream end in hollow cathode chamber of adjacent gas passage is at most 0.6 inch.

68. plasma process as claimed in claim 62 chamber, the thickness that it is characterized in that this diffuser plate element are between 0.8 inch to 3.0 inches.

69. plasma process as claimed in claim 62 chamber is characterized in that this diffuser plate element is a rectangle.

70., it is characterized in that the size of this diffuser plate element is at least 1,200,000 square millimeter as the described plasma process of claim 69 chamber.

71. plasma process as claimed in claim 62 chamber is characterized in that the two combination of this taper shape or tubular diameter or length or this is that central authorities from this diffuser plate element progressively increase toward the edge.

72. plasma process as claimed in claim 62 chamber is characterized in that this gas passage promotes to flow by its even of gas.

73. plasma process as claimed in claim 62 chamber is characterized in that the configuration equably among this gas passage of this opening hole.

74. plasma process as claimed in claim 62 chamber is characterized in that the configuration unevenly among this gas passage of this opening hole.

75. a plasma process chamber, it comprises at least:

One diffuser plate element, it has a upstream side and a downstream side; And

One RF power supply, it is to be coupled to this diffuser plate element;

Wherein said hollow cathode chamber be coning or the cylinder bodily form and should taper shape or the two combination of tubular diameter or the degree of depth or this be that central authorities from this diffuser plate element progressively increase toward the edge, and the surface area density in the hollow cathode chamber of this a plurality of gas passages is progressively to be increased by the past edge of the central authorities of this diffuser plate element; And

76. as the described plasma process of claim 75 chamber, the surface area density that it is characterized in that the hollow cathode chamber of these a plurality of gas passages is between 10% to 100%.

77. as the described plasma process of claim 75 chamber, the conical or tubular diameter that it is characterized in that being positioned at this downstream end is between 0.1 inch to 1.0 inches.

78., it is characterized in that this taper shape or the tubular degree of depth are between 0.1 inch to 2.0 inches as the described plasma process of claim 75 chamber.

79., it is characterized in that this conical start point is between 50 degree between 10 degree as the described plasma process of claim 75 chamber.

80. as the described plasma process of claim 75 chamber, it is characterized in that this taper shape or tubular diameter are between 0.1 inch to 1.0 inches, this taper shape or the tubular degree of depth are between 0.1 inch to 2.0 inches, and this conical start point is between 50 degree between 10 degree.

81. as the described plasma process of claim 75 chamber, the thickness that it is characterized in that this diffuser plate element is between 0.8 inch to 3.0 inches.

82., it is characterized in that this diffuser plate element is a rectangle as the described plasma process of claim 75 chamber.

83., it is characterized in that the size of this diffuser plate element is at least 1,200,000 square millimeter as the described plasma process of claim 82 chamber.

84., it is characterized in that this gas passage promotes to flow by its even of gas as the described plasma process of claim 75 chamber.

85., it is characterized in that the configuration equably among this gas passage of this opening hole as the described plasma process of claim 75 chamber.

86., it is characterized in that the configuration unevenly among this gas passage of this opening hole as the described plasma process of claim 75 chamber.

87. the gas distribution plate assembly that the plasma process chamber is used, it comprises at least:

One diffuser plate element, its have a upstream side and a downstream side wherein this gas diffusion plate be to be divided into a plurality of area on-axis; And

Wherein said hollow cathode chamber be coning or the cylinder bodily form and should taper shape or the two combination of tubular diameter or the degree of depth or this be that central authorities from this diffuser plate element progressively increase toward the edge, the volume in the hollow cathode chamber of gas passage or surface-area are that central authorities by this diffuser plate element progressively increase toward the edge in all identical and each area on-axis of the gas passage in each area on-axis.

88., it is characterized in that this area on-axis has 2 at least as the described gas distribution plate assembly of claim 87.

89., it is characterized in that this boring has the density between 10% to 100% as the described gas distribution plate assembly of claim 87.

90. as the described gas distribution plate assembly of claim 87, the density that it is characterized in that this boring is between 30% to 100%.

91., it is characterized in that being positioned at the conical or tubular diameter of this downstream end between 0.1 inch to 1.0 inches as the described gas distribution plate assembly of claim 87.

92., it is characterized in that being positioned at the conical or tubular degree of depth of this downstream end between 0.1 inch to 2.0 inches as the described gas distribution plate assembly of claim 87.

93., it is characterized in that this conical start point is between 50 degree between 10 degree as the described gas distribution plate assembly of claim 87.

94. as the described gas distribution plate assembly of claim 87, it is characterized in that this taper shape or tubular diameter are between 0.1 inch to 1.0 inches, this taper shape or the tubular degree of depth are between 0.1 inch to 2.0 inches, and this conical start point is between 50 degree between 10 degree.

95., it is characterized in that being positioned at 0.6 inch at the most of distance between the hollow cathode chamber of the adjacent gas passage of this downstream end as the described gas distribution plate assembly of claim 87.

96. as the described gas distribution plate assembly of claim 87, the thickness that it is characterized in that this diffuser plate element is between 0.8 inch to 3.0 inches.

97., it is characterized in that this diffuser plate element is a rectangle as the described gas distribution plate assembly of claim 87.

98., it is characterized in that the size of this diffuser plate element is at least 1,200,000 square millimeter as the described gas distribution plate assembly of claim 97.

99., it is characterized in that this gas passage promotes to flow by its even of gas as the described gas distribution plate assembly of claim 87.

100., it is characterized in that the configuration equably among this gas passage of this opening hole as the described gas distribution plate assembly of claim 87.

101., it is characterized in that the configuration unevenly among this gas passage of this opening hole as the described gas distribution plate assembly of claim 87.

102. a diffuser plate comprises:

It has a upper surface and a basal surface one main body, and described basal surface has curvature;

It is between this upper surface and basal surface for a plurality of gas passages, and wherein each gas passage has:

The hollow cathode chamber, it is the downstream of described opening hole and intersects with described basal surface;

Wherein said hollow cathode chamber be coning or the cylinder bodily form and should taper shape or the two combination of tubular diameter or the degree of depth or this be that central authorities from this diffuser plate element progressively increase toward the edge, and the size in this hollow cathode chamber increases toward the edge from the central authorities of this diffuser plate element; And

One external region and an interior region are than coming thickly in this main body between surface and the basal surface on this interior region in this main body between surface and the basal surface on this external region wherein.

103., it is characterized in that this upper surface is smooth as the described diffuser plate of claim 102.

104., it is characterized in that this gas passage promotes to flow by its even of gas as the described diffuser plate of claim 102.

105., it is characterized in that the configuration equably among this gas passage of this opening hole as the described diffuser plate of claim 102.

106., it is characterized in that the configuration unevenly among this gas passage of this opening hole as the described diffuser plate of claim 102.