CN101140860B - Apparatus for treating plasma - Google Patents
Apparatus for treating plasma Download PDFInfo
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- CN101140860B CN101140860B CN2007101808824A CN200710180882A CN101140860B CN 101140860 B CN101140860 B CN 101140860B CN 2007101808824 A CN2007101808824 A CN 2007101808824A CN 200710180882 A CN200710180882 A CN 200710180882A CN 101140860 B CN101140860 B CN 101140860B
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- vacuum chamber
- pedestal
- plasma processing
- processing apparatus
- side plate
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Abstract
A device for plasma processing is provided, which comprises a vacuum chamber, a top electrode, a bottom electrode and a base. The top electrode and bottom electrode are equipped inside the vacuum chamber. The vacuum chamber has a bottom on which the base is mounted. The bottom electrode is set on the base. The base and vacuum chamber form a base space, whose airflow actually is isolated from the airflow in the vacuum chamber. The plasma processing device provided in the invention can reduce the opportunity of drifting of dust and catabolite in vacuum chamber onto the base, minimize the burblein vacuum chamber and improve homogeneity of the base etching and sedimentation.
Description
Technical field
The invention relates to a kind of plasma processing apparatus; More particularly, the present invention is about a kind of plasma processing apparatus that is used for dry ecthing procedure.
Background technology
In semiconductor and process for manufacturing liquid crystal display, it is very universal to utilize plasma to carry out the technology of dry ecthing.In addition, plasma treatment not only can be used for general etching program, also can use in the deposition program, therefore its range of application increases fast, particularly in the manufacturing process of Thin Film Transistor-LCD (TFT LCD) leading portion array (array), usually use plasma treatment to carry out etching and deposition.
In simple terms, plasma treatment is to produce plasma in a reaction compartment (being generally a vacuum chamber), and uses the plasma that is produced to carry out etching or deposition further.Fig. 1 shows the existing plasma processing apparatus 10 that is used to carry out dry ecthing, and it comprises vacuum chamber 12, top electrode 14, bottom electrode 16 and pedestal 18.Top electrode 14 is arranged in the vacuum chamber 12 with bottom electrode 16, and couples to produce plasma with power supply (not icon).16 of bottom electrodes are arranged on the pedestal 18, and substrate S (for example glass substrate or silicon substrate) is placed on the bottom electrode 16, carry out etching or deposition to utilize the plasma that is produced.
Have the knack of related art techniques person as can be known, in existing plasma processing apparatus 10, bottom electrode 16 is comparatively narrow with the space of pedestal 18 belows, and many vacuum pipelines (for example steam vent 13) and transmission mechanism (not icon) need be set, not easy to clean, therefore there are dust and byproduct of reaction to pile up easily.When plasma processing apparatus 10 carries out plasma etching or deposition, whole vacuum chamber 12 is in suitable low-pressure state, particularly the gas in the vacuum chamber 12 is constantly detached vacuum chamber 12 via the steam vent 13 of vacuum chamber 12 bottoms, at this moment the dust and the byproduct of reaction that are piled up in bottom electrode 16 and pedestal 18 belows are easy to be taken up by air-flow (shown in arrow A), not only can influence the cleanliness factor of whole vacuum chamber 12, even may drift to that substrate S goes up and the etching or the deposition effect that influence substrate S, and then cause the defective (for example E-AS-Residue (residual film) defective) of substrate S.
Therefore, press for a kind of new plasma processing apparatus at present, can solve the above problems.Particularly, this device can not increase cost significantly, and implements easily again.
Summary of the invention
Because the disappearance of Prior Art, the present invention proposes a kind of plasma processing apparatus, one of its characteristics are: this plasma processing unit has reduced the chance that dust and accessory substance in the vacuum chamber drift to substrate; Another characteristics are to reduce the flow-disturbing effect in the vacuum chamber, promote the homogeneity (uniformity) of substrate etching or deposition.
According to embodiments of the invention, this kind plasma processing apparatus comprises a vacuum chamber, a top electrode, a bottom electrode, a pedestal and cover plate.Top electrode and bottom electrode are arranged in the vacuum chamber.Vacuum chamber comprises a bottom, and the bottom of this vacuum chamber has steam vent, and pedestal comprises side plate and support portion, and this side plate is between this support portion and this bottom, and this support portion is for supporting this bottom electrode, and the lower end of this side plate links to each other with the bottom of this vacuum chamber.One pedestal space is formed on the bottom of pedestal and vacuum chamber, and the arranged outside of this side plate has two corresponding passages, and the air-flow of air-flow in the pedestal space and vacuum chamber and steam vent are isolated in fact.This cover plate is covered in the part that this pedestal is not set on this bottom, and links with this pedestal, and this cover plate has an opening to expose this steam vent.
Another embodiment of plasma processing apparatus according to the present invention, this cover plate and this side plate link.
By above-described embodiment, in plasma processing apparatus of the present invention, because the space of bottom electrode below and vacuum chamber essence are isolated, compared to existing design, the present invention can not increase cost significantly, and implements easily again.One of the present invention advantage is, by above-mentioned isolated design, being piled up in the dust of bottom electrode and pedestal below and byproduct of reaction can not be subjected to air-flow in the vacuum chamber and influence and enter in the vacuum chamber, therefore can keep the vacuum chamber cleanliness factor, also reduce dust and byproduct of reaction and drift to chance on the substrate S, also can reduce the flow-disturbing effect in the vacuum chamber simultaneously.
Narration by following preferred embodiment also cooperates graphic explanation, and purpose of the present invention, feature and advantage will be more clear.
Description of drawings
Fig. 1 is the schematic diagram of existing plasma processing apparatus;
Fig. 2 A is the end view of plasma processing apparatus embodiment of the present invention;
Fig. 2 B is the vertical view of plasma processing apparatus embodiment of the present invention.
Main description of reference numerals
Bottom B opening OP
Air current A substrate S
Embodiment
Fig. 2 A shows one of them execution mode of plasma processing apparatus of the present invention.Plasma processing apparatus 20 comprises vacuum chamber 22, top electrode 24, bottom electrode 26 and pedestal 28.Plasma processing apparatus 20 can be applicable to reactive ion etching (RIE), inductance coupling high formula plasma etching (ICP), high capacitance manifold type plasma etching (ECCP) etc., but do not exceed with aforementioned, and other is about the application of plasma processing apparatus 20, should be this skill person of habit and know, do not add at this and give unnecessary details.
In preferred embodiment, the material of vacuum chamber 22 is an aluminium.The inner surface of vacuum chamber 22 is usually with anodized, and the formation aluminium anode oxide film corrodes with anti-plasma.Top electrode 24 is arranged in the vacuum chamber 22 with bottom electrode 26, and links with a radio frequency (RF) power supply (not icon), obtains a voltage difference.When carrying out plasma etching or deposition, vacuum chamber 22 contains a spot of gas molecule, and top electrode 24 produces plasma with the voltage difference that bottom electrode 26 is provided in order to excite the gas molecule in the vacuum chamber 22.
In preferred embodiment, it is material that bottom electrode 26 also is to use aluminium, and the surface can be accepted pottery and melts and penetrate processing, and substrate S is placed on the bottom electrode 26, to carry out plasma etching or deposition.Vacuum chamber 22 has a bottom B, and pedestal 28 is arranged at this bottom B, and 26 of bottom electrodes are arranged on the pedestal 28.
Shown in Fig. 2 A, pedestal 28 comprises support portion 282 and to perpendicular side plate 284, support portion 282 is horizontally disposed with to support bottom electrode 26, and perpendicular side plate 284 is between support portion 282 and bottom B, and the material of support portion 282 and side plate 284 is preferably non-conductive material.
Shown in Fig. 2 A, support portion 282, side plate 284 define a pedestal space S P with bottom B, and the arranged outside of side plate 284 has two corresponding passages.In preferred embodiment, be provided with pipeline among the pedestal space S P for input helium (He), and the terminated line (all not icon) that is coupled to bottom electrode 26.Setting by above-mentioned side plate 284; the air-flow in the pedestal space S P and the air-flow of vacuum chamber 22 are isolated in fact, and dust or the particle in the pedestal space S P can not enter into vacuum chamber 22 thus; thereby avoid influencing the cleanliness factor of vacuum chamber 22, also reduce the chance that causes substrate S defective.In preferred embodiment, side plate 284 is provided with around bottom electrode 26, or along the support portion 282 around be provided with, and be principle, for holding required vacuum pipeline and other circuit and increasing the scope that completely cuts off to enlarge pedestal space S P as far as possible.
Shown in Fig. 2 A, plasma processing apparatus 20 is provided with at least one steam vent 23 at vacuum chamber 22 bottom B, and steam vent 23 generally has filter screen 23a.A steam vent 23 and an outside aspiration pump (not icon) link, in order to the gas in the vacuum chamber 22 is extracted out, to keep suitable operating air pressure.Near the steam vent 23 current rate is stronger usually, setting by above-mentioned support portion 282, side plate 284 and bottom B, air-flow and steam vent 23 in the pedestal space S P of plasma processing apparatus 20 are isolated in fact, the air-flow that can further avoid steam vent 23 to be caused is brought the dust in the pedestal space S P into to vacuum chamber 22, and cause bad influence, also can reduce the flow-disturbing effect in the vacuum chamber 22 simultaneously.
Fig. 2 B is depicted as the vertical view of another execution mode ionic medium body processing unit 20 of the present invention.Plasma processing apparatus 20 can include cover plate 286, flatly is covered on the bottom B of vacuum chamber 22.In preferred embodiment, cover plate 286 is covered in the part that pedestal 28 is not set on the B of bottom, but cover plate 286 has opening OP to expose steam vent 23.In addition, the material of cover plate 286 is preferably non-conductive material.Cover plate 286 can prevent the deposition of etching product in the plasma etching process.
By above-described embodiment, the present invention proposes a kind of plasma processing apparatus, and wherein the space of bottom electrode below and vacuum chamber essence are isolated.Compared to existing design, the present invention can not increase cost significantly, and implements easily again.One of the present invention advantage is, by above-mentioned isolated design, being piled up in the dust of bottom electrode and pedestal below and byproduct of reaction can not be subjected to air-flow in the vacuum chamber and influence and enter in the vacuum chamber, therefore can keep the vacuum chamber cleanliness factor, also reduce dust and byproduct of reaction and drift to chance on the substrate S.
The above is preferred embodiment of the present invention only, is not in order to limit claim of the present invention; All other do not break away from the equivalence of being finished under the disclosed spirit and changes or modification, all should comprise within the scope of the invention.
Claims (3)
1. plasma processing apparatus, this plasma processing unit comprises:
Vacuum chamber, this vacuum chamber have the bottom, and the bottom of this vacuum chamber has steam vent;
Top electrode and bottom electrode, it is arranged in this vacuum chamber; And
Pedestal, this pedestal comprises side plate and support portion, this side plate is between this support portion and this bottom, this support portion is for supporting this bottom electrode, the lower end of this side plate links to each other with the bottom of this vacuum chamber, and a pedestal space is formed on the bottom of this pedestal and vacuum chamber, and the arranged outside of this side plate has two corresponding passages, wherein the air-flow of the air-flow in this pedestal space and this vacuum chamber is isolated, and the air-flow in this pedestal space and this steam vent are isolated;
Cover plate, this cover plate is covered in the part that this pedestal is not set on this bottom, and links with this pedestal, and this cover plate has an opening to expose this steam vent.
2. plasma processing apparatus as claimed in claim 1 is characterized in that, this side plate is provided with around this bottom electrode.
3. plasma processing apparatus as claimed in claim 1 is characterized in that, this cover plate and this side plate link.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2007101808824A CN101140860B (en) | 2007-10-19 | 2007-10-19 | Apparatus for treating plasma |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2007101808824A CN101140860B (en) | 2007-10-19 | 2007-10-19 | Apparatus for treating plasma |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101140860A CN101140860A (en) | 2008-03-12 |
| CN101140860B true CN101140860B (en) | 2010-04-07 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2007101808824A Expired - Fee Related CN101140860B (en) | 2007-10-19 | 2007-10-19 | Apparatus for treating plasma |
Country Status (1)
| Country | Link |
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| CN (1) | CN101140860B (en) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101845620B (en) * | 2009-03-27 | 2012-07-18 | 亚洲太阳科技有限公司 | Multi-cavity chemical vapor deposition p-i-n coating device by pulse heating |
| CN108987235B (en) * | 2018-07-12 | 2020-06-05 | 昆山龙腾光电股份有限公司 | Plasma processing device |
| CN112259550A (en) * | 2020-10-21 | 2021-01-22 | 长江存储科技有限责任公司 | Etching method and etching device for semiconductor device |
| CN115753635B (en) * | 2022-11-04 | 2024-06-04 | 南昌师范学院 | Space microgravity dust plasma scientific experiment device |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6838387B1 (en) * | 2001-06-21 | 2005-01-04 | John Zajac | Fast etching system and process |
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2007
- 2007-10-19 CN CN2007101808824A patent/CN101140860B/en not_active Expired - Fee Related
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6838387B1 (en) * | 2001-06-21 | 2005-01-04 | John Zajac | Fast etching system and process |
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| CN101140860A (en) | 2008-03-12 |
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Granted publication date: 20100407 Termination date: 20201019 |