CN102271454B - Intermediate/low-frequency plasma processing device and electrode plates - Google Patents

Intermediate/low-frequency plasma processing device and electrode plates Download PDF

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Publication number
CN102271454B
CN102271454B CN2010101979590A CN201010197959A CN102271454B CN 102271454 B CN102271454 B CN 102271454B CN 2010101979590 A CN2010101979590 A CN 2010101979590A CN 201010197959 A CN201010197959 A CN 201010197959A CN 102271454 B CN102271454 B CN 102271454B
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coating
plasma
plasma processing
plate
electric pole
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CN102271454A (en
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朱桂林
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Beijing North Microelectronics Co Ltd
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Beijing North Microelectronics Co Ltd
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Abstract

The invention discloses an intermediate/low-frequency plasma processing device and electrode plates, relating to the field of plasma processing technologies, which is invented to increase the plasma density in a technical process and be suitable for a high-temperature technical environment. The intermediate/low-frequency plasma processing device disclosed by the invention comprises a reacting chamber and an upper electrode plate and a lower electrode plate which are oppositely arranged inside the reacting chamber; the upper electrode plate is a stainless steel plate; and a coating is arrangedon the surface of the upper electrode plate, which is in contact with plasma in the reacting chamber. The intermediate/low-frequency plasma processing device and the electrode plates can be applied to the plasma processing technology.

Description

In a kind of, low frequency plasma processing device and battery lead plate
Technical field
The present invention relates to the plasma process technical field, relate in particular to a kind of in, low frequency plasma processing device and battery lead plate.
Background technology
In semiconductor fabrication process, the plasma process technology has obtained using very widely.This technology is to excite process gas to generate plasma under certain condition, utilize plasma and substrate (for example silicon chip) that complicated physics, chemical reaction take place and finish various processing at substrate, as plasma etching, plasma foil deposition etc., obtain the semiconductor structure that needs.
Fig. 1 shows a kind of plasma processing device structural representation commonly used.As shown in Figure 1, plasma processing device generally includes: reaction chamber 1, its earthing of casing, in discharge process with plasma confinement in chamber interior; Gas handling system 2 makes process gas feed reaction chamber 1; Gas extraction system 3 is for vacuumizing and reacted described process gas being discharged reaction chamber 1; Two parallel-plate electrode top electrodes 4 respect to one another and bottom electrode 5 excite the required plasma of generation by top electrode 4 and bottom electrode 5, and wherein, top electrode 4 is connected with radio frequency source 6, and plasma exciatiaon power is provided; In some plasma processing devices such as plasma film deposition equipment, top electrode 4 surfaces are typically provided with through hole, present showerhead configuration, match with gas handling system 2, make process gas enter reaction chamber 1 equably by the aperture that gathers on it and be provoked into and be plasma; Bottom electrode 5 is grounding electrode, constitutes radio frequency path with top electrode 4 and plasma in discharge process.Substrate 7 is placed on the bottom electrode 5 usually, processes under plasma environment.Radio frequency source 6 can be low frequency (30KHz-300KHz), and (〉=2MHz) radio frequency source can be selected the radio-frequency region that is fit to according to different technological requirements for intermediate frequency (300KHz-2MHz) or high frequency.In the production of crystal silicon solar batteries, in usually adopting, the low frequency radio frequency source, at silicon substrate deposition antireflective silicon nitride film.For high frequency, in, the low frequency plasma can make silicon nitride film obtain more outstanding passivation effect, thereby improve the transformation efficiency of solar cell.In, under the situation of low frequency, keeping of plasma discharge is that secondary electrons by the bombardment of the ion in plasma top electrode 4 surfaces produce are realized.
In existing, in the low frequency plasma processing device, top electrode 4 general stainless steel material or the aluminums of adopting are made, and keeping of plasma discharge is to realize by the bombardment stainless steel polar plate of the ion in the plasma or the surperficial secondary electron that produces of aluminum substrate.Yet, because the secondary ability of stainless steel material is low, therefore, in the technical process, adopts the battery lead plate of stainless steel material can cause the plasma density of chamber lower, thereby influenced production efficiency.And aluminum the secondary ability under identical condition, be greater than stainless steel material, therefore in technical process, adopt the battery lead plate of aluminum that chamber is obtained than the high plasma density of stainless steel electrode plate situation.But because the heat resistance of aluminum is relatively poor, can only under the cryogenic chamber environment, use, under the high temperature chamber environment, the crystal silicon solar batteries silicon nitride film depositing operation that for example need under the temperature about 500 ℃, carry out, the mechanical strength of aluminum will have significantly and descend, thereby softening transform, what influence was discharged normally carries out.
Summary of the invention
Main purpose of the present invention is, provide a kind of in, low frequency plasma processing device and battery lead plate, can improve technical process ionic medium volume density, and be applicable to the high-temperature technology environment.
For achieving the above object, the present invention adopts following technical scheme:
In a kind of, the low frequency plasma processing device, comprise reaction chamber, the electric pole plate and the lower electrode plate that are oppositely arranged in reaction chamber inside, described electric pole plate is corrosion resistant plate, and described electric pole plate is provided with coating with the surface that plasma in the described reaction chamber contacts.
A kind of battery lead plate, described battery lead plate are that stainless steel material and electrode plate surface are provided with coating.
After adopting technique scheme, in provided by the invention, low frequency plasma processing device and battery lead plate, in machining process, can be by the secondary ability of battery lead plate coating material, the secondary ability on remarkable intensifier electrode plate surface, make plasma density in the reaction chamber be able to by a relatively large margin raising, thereby improved production efficiency.And, can be by the resistance to elevated temperatures of assistant coating, make provided by the invention in, low frequency plasma processing device and battery lead plate be applicable to the high-temperature technology environment.
Description of drawings
In order to be illustrated more clearly in the embodiment of the invention or technical scheme of the prior art, to do to introduce simply to the accompanying drawing of required use in embodiment or the description of the Prior Art below, apparently, accompanying drawing in describing below only is some embodiments of the present invention, for those of ordinary skills, under the prerequisite of not paying creative work, can also obtain other accompanying drawing according to these accompanying drawings.
Fig. 1 is the structural representation of prior art ionic medium body process equipment reaction chamber;
Fig. 2 for the embodiment of the invention provide in, the structural representation of low frequency plasma processing device;
Fig. 3 for the embodiment of the invention provide in, the side structure schematic diagram of the electric pole plate of low frequency plasma processing device;
Fig. 4 for the embodiment of the invention provide in, the electric pole plate of low frequency plasma processing device is provided with the structural representation on the surface of coating;
The structural representation of the battery lead plate that Fig. 5 provides for the embodiment of the invention.
Embodiment
Below in conjunction with the accompanying drawing in the embodiment of the invention, the technical scheme in the embodiment of the invention is clearly and completely described, obviously, described embodiment only is the present invention's part embodiment, rather than whole embodiment.Based on the embodiment among the present invention, those of ordinary skills belong to the scope of protection of the invention not making the every other embodiment that obtains under the creative work prerequisite.
A kind of medium and low frequency plasma processing device that the embodiment of the invention provides, as shown in Figure 2, comprise reaction chamber 1, the electric pole plate 4 and the lower electrode plate 5 that are oppositely arranged in reaction chamber 1 inside, wherein, electric pole plate 4 is corrosion resistant plate, and electric pole plate 4 is provided with coating 41 with the surface that plasma in the reaction chamber 1 contacts.In addition, top electrode 4 is connected with the radio frequency source 6 of reaction chamber 1 outside.
The embodiment of the invention provide in, the low frequency plasma processing device, can improve the plasma density in the technical process, and be applicable to the high-temperature technology environment.
In the technical process of plasma process, secondary electron is that ion bombards the electronics that the electric pole plate surface makes the polar board surface emission under upper state, and the secondary electron of generation is accelerated by electric field, as new excitation electron, ionize process gases.In, under the situation of low-frequency excitation, secondary electron is kept discharge, ionize process gases plays leading position in discharge, the stability of influence discharge.Therefore, in, in the low frequency plasma processes, the secondary ability of electric pole plate is determining the plasma density of reaction chamber inside, the secondary ability of electric pole plate is strong, technical process ionic medium volume density is just big, thereby can bring higher processing speed, improve production efficiency.
Based on above-mentioned principle, the embodiment of the invention provide in, the low frequency plasma processing device, as shown in Figure 3, increase coating 41 at electric pole plate 4 with the surface that plasma in the reaction chamber 1 contacts, namely increased coating 41 in electric pole plate 4 and lower electrode plate 5 facing surfaces.Wherein, the secondary ability of coating 41 materials will be higher than the secondary ability of stainless steel material, has so just obtained with respect to the higher plasma density of stainless steel electric pole plate that is not provided with coating.Simultaneously, guarantee that coating 41 materials have great high-temperature resistant, make electric pole plate 4 be applicable to the high-temperature technology environment, can not go out the problem of a softening transform.
Wherein, coating 41 can be formed at plasma contact in electric pole plate 4 and the reaction chamber 1 surface by modes such as meltallizings, and certain generation type that other also can be arranged is not done restriction here.
Further, as shown in Figure 4, can be provided with through hole on the electric pole plate 4, whole pole plate is the spray head, can make process gas enter reaction chamber 1 uniformly like this, makes the distribution of plasma more even.Can according to actual needs the shape of battery lead plate and shape, density and the distribution etc. of through hole be set.
In order to make those skilled in the art better understand technical scheme of the present invention, also by reference to the accompanying drawings the embodiment of battery lead plate of the present invention is described in detail below by specific embodiment.Here be noted that following specific embodiment just in order to describe the present invention, but be not limited to the present invention.
Embodiment one
The medium and low frequency plasma processing device that present embodiment provides, the coating 41 of electric pole plate 4 is aluminium oxide (Al 2O 3) ceramic coating.
Al 2O 3Material has much higher secondary ability for stainless steel material, and, Al 2O 3The secondary ability of material also is higher than aluminum, therefore, adopts this Al that has 2O 3The stainless steel electric pole plate 4 of ceramic coating can make reaction chamber inside, obtains than the stainless steel electric pole plate that is not provided with coating and the higher plasma density of aluminium electric pole plate, thereby brings higher processes efficient, enhances productivity.And Al 2O 3Ceramic coating has great high-temperature resistant, can use under the high-temperature technology condition.
Wherein, Al 2O 3Ceramic coating 41 is to adopt meltallizing technology to be formed at surface that electric pole plate 4 contacts with the interior plasma of reaction chamber.Because Al 2O 3Pottery is insulating material, and in order not influence normally carrying out of discharge, the thickness of coating 41 is thinner, between 1 micron-100 microns (um), arrives under the thickness range of 100um Al 1 2O 3The impedance phase of ceramic coating 41 is very little for plasma impedance, can not influence normally carrying out of plasma discharge.
In the present embodiment, the area A of electric pole plate 4 is 1500mm * 1500mm, Al 2O 3The thickness d of ceramic coating 41 is 40um, and the coating of this thickness is easy to implement, can effectively control cost.And according to impedance Xc computing formula
X c = 1 2 πfc = d 2 πf ϵ r ϵ 0 A - - - ( 1 )
Wherein, Al 2O 3The relative dielectric constant ε of material rBeing 4.5, is under the condition of 300KHz at discharge frequency f, can calculate Al 2O 3The impedance Xc of ceramic coating 41 equals 0.24 Ω.This impedance phase is very little for plasma impedance, can not influence normally carrying out of plasma discharge.
Embodiment two
The medium and low frequency plasma processing device that present embodiment provides, the coating 41 of electric pole plate 4 is aluminium oxide (Al 2O 3) ceramic coating, the area A of electric pole plate 4 is 1500mm * 1500mm, Al 2O 3The thickness d of ceramic coating 41 is 100um.Equally, according to formula (1), can calculate Al in the present embodiment 2O 3The impedance Xc of ceramic coating 41 equals 0.6 Ω, and this impedance phase is very little for plasma impedance, can not influence normally carrying out of plasma discharge.
Embodiment three
The medium and low frequency plasma processing device that present embodiment provides, the coating 41 of electric pole plate 4 is aluminium oxide (Al 2O 3) ceramic coating, the area A of electric pole plate 4 is 1500mm * 1500mm, Al 2O 3The thickness d of ceramic coating 41 is 1um.Equally, according to formula (1), can calculate Al in the present embodiment 2O 3The impedance Xc of ceramic coating 41 equals 0.006 Ω, and this impedance phase is very little for plasma impedance, can not influence normally carrying out of plasma discharge.
It is pointed out that the coating 41 of electric pole plate 4 is not limited to Al in the plasma apparatus that the embodiment of the invention provides 2O 3Ceramic coating also can adopt with respect to stainless steel material to have higher secondary ability, and heat resistance better and not influences the other materials that discharge is normally carried out, and does not do restriction here.
Be understandable that, of the present invention in, the low frequency plasma processing device refers to the equipment substrate processed by the plasma that radio-frequency drive produces, as in, low frequency plasma film deposition equipment, in, low frequency plasma etching equipment etc.
Correspondingly, embodiments of the invention also provide a kind of battery lead plate 8, and as shown in Figure 5, battery lead plate 8 is provided with coating 9 for stainless steel material and battery lead plate 8 surfaces.
The battery lead plate that the embodiment of the invention provides, when be used for, the low frequency plasma processing device, during as electric pole plate, can improve technical process ionic medium volume density, and be applicable to the high-temperature technology environment.
In the technical process of plasma process, secondary electron is that ion bombards the electronics that electrode plate surface makes surface emitting under upper state, and the secondary electron of generation is accelerated by electric field, as new excitation electron, ionize process gases.In, under the situation of low-frequency excitation, secondary electron is kept discharge, ionize process gases plays leading position in discharge, the stability of influence discharge.Therefore, in, in the low frequency plasma processes, the secondary ability of battery lead plate is determining the plasma density of reaction chamber inside, the secondary ability of battery lead plate is strong, technical process ionic medium volume density is just big, thereby can bring higher processing speed, improve production efficiency.
Based on above-mentioned principle, the battery lead plate 8 that the embodiment of the invention provides is provided with coating 9 on the corrosion resistant plate surface.Wherein, the secondary ability of coating 9 materials will be higher than stainless stainless steel material, when being used for, during the low frequency plasma processing equipment, just can obtaining with respect to the higher plasma density of stainless steel electrode plate that is not provided with coating.Simultaneously, guarantee that assistant coating 9 materials have great high-temperature resistant, make battery lead plate be applicable to the high-temperature technology environment, can not go out the problem of a softening transform.
Wherein, coating 9 can be Al 2O 3Ceramic coating, Al 2O 3Material has much higher secondary ability for stainless steel material, and, Al 2O 3The secondary ability of material also is higher than aluminum, therefore, adopts this Al that has 2O 3The stainless steel electrode plate 8 of ceramic coating, be used for, the low frequency plasma apparatus is during as electric pole plate, can make reaction chamber inside, obtain than the stainless steel electric pole plate that is not provided with coating and the higher plasma density of aluminium electric pole plate, thereby bring higher processes efficient, enhance productivity.And Al 2O 3Ceramic coating has great high-temperature resistant, can use under the high-temperature technology condition.Certainly, coating 9 also can adopt with respect to stainless steel material has higher secondary ability, and heat resistance is other materials preferably, does not do restriction here.
Wherein, coating 9 Al for example 2O 3Ceramic coating can be formed at battery lead plate 8 surfaces by the mode of meltallizing, certainly, also can adopt other generation types, does not do restriction here.Because Al 2O 3Pottery is insulating material, and in order not influence normally carrying out of discharge, the thickness of coating 41 is thinner, between 1-100um.Arrive under the thickness range of 100um Al 1 2O 3The impedance phase of ceramic coating 41 is very little for plasma impedance, can not influence normally carrying out of plasma discharge.Preferably, Al 2O 3The thickness of ceramic coating is 40um, and the coating of this thickness is easy to implement, can effectively control cost.
In addition, can be provided with through hole on the battery lead plate 8, whole pole plate is the spray head, like this when be used for, the low frequency plasma processing device is during as electric pole plate, can make process gas enter reaction chamber uniformly, makes the distribution of plasma more even.Can according to actual needs the shape of battery lead plate and shape, density and the distribution etc. of through hole be set.
It should be noted that the battery lead plate 8 that the embodiment of the invention ought be provided is used for, the low frequency plasma processing device, during as electric pole plate, the surface that is provided with coating 9 is relative with lower electrode plate, and the surface of namely containing coating 9 will contact with plasma.
The above; only be the specific embodiment of the present invention, but protection scope of the present invention is not limited thereto, anyly is familiar with those skilled in the art in the technical scope that the present invention discloses; can expect easily changing or replacing, all should be encompassed within protection scope of the present invention.Therefore, protection scope of the present invention should be as the criterion with the protection range of described claim.

Claims (8)

1. in one kind, the low frequency plasma processing device, comprise reaction chamber, the electric pole plate and the lower electrode plate that are oppositely arranged in reaction chamber inside, it is characterized in that,
Described electric pole plate is corrosion resistant plate, and described electric pole plate is provided with coating with the surface that plasma in the described reaction chamber contacts;
Described coating is alumina ceramic coating;
The thickness of described coating is more than or equal to 1 micron and less than 100 microns.
2. plasma processing device according to claim 1 is characterized in that, described coating is that the mode by meltallizing is formed at the surface that described electric pole plate contacts with plasma in the reaction chamber.
3. plasma processing device according to claim 1 is characterized in that, the thickness of described coating is 40 microns.
4. plasma processing device according to claim 1 is characterized in that, described electric pole plate is provided with through hole.
5. according to each described plasma processing device of claim 1 to 4, it is characterized in that described plasma processing device is plasma foil depositing device or plasma etching equipment.
One kind be used for, the battery lead plate of low frequency plasma processing device, it is characterized in that,
Described battery lead plate is that stainless steel material and electrode plate surface are provided with coating;
Described coating is alumina ceramic coating;
The thickness of described ceramic coating is more than or equal to 1 micron and less than 100 microns.
7. battery lead plate according to claim 6 is characterized in that, described coating is that the mode by meltallizing is formed at described electrode plate surface.
8. battery lead plate according to claim 6 is characterized in that, the thickness of described ceramic coating is 40 microns.
CN2010101979590A 2010-06-03 2010-06-03 Intermediate/low-frequency plasma processing device and electrode plates Active CN102271454B (en)

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CN108754396B (en) * 2018-06-07 2019-07-09 福州大学 The preparation method of cathode plate for electrolyzing zinc surface anticorrosion erosion resisting coating
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CN1468892A (en) * 2002-06-11 2004-01-21 柯尼卡株式会社 Dielectric coated pole, plasma discharge processing apparatus and thin-film forming method
CN1543662A (en) * 2001-08-16 2004-11-03 应用材料有限公司 Adjustable dual frequency voltage dividing plasma reactor
CN102082063A (en) * 2009-11-30 2011-06-01 北京北方微电子基地设备工艺研究中心有限责任公司 Electrode plate and reaction chamber for medium and low frequency plasma processing equipment

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Publication number Priority date Publication date Assignee Title
CN1543662A (en) * 2001-08-16 2004-11-03 应用材料有限公司 Adjustable dual frequency voltage dividing plasma reactor
CN1468892A (en) * 2002-06-11 2004-01-21 柯尼卡株式会社 Dielectric coated pole, plasma discharge processing apparatus and thin-film forming method
CN102082063A (en) * 2009-11-30 2011-06-01 北京北方微电子基地设备工艺研究中心有限责任公司 Electrode plate and reaction chamber for medium and low frequency plasma processing equipment

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Address after: 100176 No. 8 Wenchang Avenue, Beijing economic and Technological Development Zone

Patentee after: Beijing North China microelectronics equipment Co Ltd

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