CN101136324A - Semiconductor manufacturing method and semiconductor laser device manufacturing method - Google Patents
Semiconductor manufacturing method and semiconductor laser device manufacturing method Download PDFInfo
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- CN101136324A CN101136324A CNA2007101821532A CN200710182153A CN101136324A CN 101136324 A CN101136324 A CN 101136324A CN A2007101821532 A CNA2007101821532 A CN A2007101821532A CN 200710182153 A CN200710182153 A CN 200710182153A CN 101136324 A CN101136324 A CN 101136324A
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 124
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 18
- 150000001875 compounds Chemical class 0.000 claims abstract description 49
- 239000000463 material Substances 0.000 claims abstract description 26
- 238000006243 chemical reaction Methods 0.000 claims abstract description 22
- 239000011777 magnesium Substances 0.000 claims description 140
- 239000002994 raw material Substances 0.000 claims description 113
- 238000000034 method Methods 0.000 claims description 62
- 229910000861 Mg alloy Inorganic materials 0.000 claims description 58
- 239000000956 alloy Substances 0.000 claims description 53
- 229910045601 alloy Inorganic materials 0.000 claims description 41
- 230000004913 activation Effects 0.000 claims description 23
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 10
- 229910052749 magnesium Inorganic materials 0.000 claims description 7
- 239000000758 substrate Substances 0.000 claims description 5
- 239000002019 doping agent Substances 0.000 abstract description 42
- 229910021478 group 5 element Inorganic materials 0.000 abstract 2
- 238000009792 diffusion process Methods 0.000 description 23
- 239000000203 mixture Substances 0.000 description 12
- 239000007789 gas Substances 0.000 description 10
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 10
- 238000002425 crystallisation Methods 0.000 description 8
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 8
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 8
- IBEFSUTVZWZJEL-UHFFFAOYSA-N trimethylindium Chemical compound C[In](C)C IBEFSUTVZWZJEL-UHFFFAOYSA-N 0.000 description 8
- 230000008025 crystallization Effects 0.000 description 7
- 239000001257 hydrogen Substances 0.000 description 7
- 229910052739 hydrogen Inorganic materials 0.000 description 7
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 6
- 239000002800 charge carrier Substances 0.000 description 6
- HQWPLXHWEZZGKY-UHFFFAOYSA-N diethylzinc Chemical compound CC[Zn]CC HQWPLXHWEZZGKY-UHFFFAOYSA-N 0.000 description 6
- 210000000744 eyelid Anatomy 0.000 description 6
- 238000002156 mixing Methods 0.000 description 6
- 238000010521 absorption reaction Methods 0.000 description 5
- 238000009825 accumulation Methods 0.000 description 5
- 125000004429 atom Chemical group 0.000 description 5
- 238000009826 distribution Methods 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- 230000010355 oscillation Effects 0.000 description 5
- 230000008859 change Effects 0.000 description 4
- 230000008020 evaporation Effects 0.000 description 4
- 238000001704 evaporation Methods 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- 238000001004 secondary ion mass spectrometry Methods 0.000 description 4
- 230000006641 stabilisation Effects 0.000 description 4
- 238000003860 storage Methods 0.000 description 4
- 230000006866 deterioration Effects 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 239000011701 zinc Substances 0.000 description 3
- 239000006096 absorbing agent Substances 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 238000005187 foaming Methods 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 229910000967 As alloy Inorganic materials 0.000 description 1
- -1 Cp2Mg Chemical compound 0.000 description 1
- 208000003351 Melanosis Diseases 0.000 description 1
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- 230000033228 biological regulation Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000003139 buffering effect Effects 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000003776 cleavage reaction Methods 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 230000008520 organization Effects 0.000 description 1
- 125000002524 organometallic group Chemical group 0.000 description 1
- 238000010422 painting Methods 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000007017 scission Effects 0.000 description 1
- 238000001947 vapour-phase growth Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
- H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
- H01S5/34326—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer based on InGa(Al)P, e.g. red laser
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S2304/00—Special growth methods for semiconductor lasers
- H01S2304/04—MOCVD or MOVPE
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/305—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure
- H01S5/3054—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure p-doping
- H01S5/3063—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure p-doping using Mg
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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Abstract
There are provided preflow periods t 11 , t 12 in which group III element materials TMG, TMA and TMI are not supplied from a group III element material container to a reaction region (reactor), while a group V element material PH3 and an Mg dopant material are supplied from a group V element material container and a dopant material container to the reaction region (reactor) after an Mg-undoped group III-V compound semiconductor layer is crystallinically grown and before an Mg-doped group III-V compound semiconductor layer is crystallinically grown. According to the semiconductor manufacturing method, an Mg doping profile can be accurately controlled.
Description
Technical field
The present invention relates to semiconductor making method, relate more specifically in the semiconductor making method that makes III-V compound semiconductor crystalline growth, adopt Mg to make the method for alloy.
In addition, the present invention relates to make the manufacture method of the semiconductor Laser device of AlGaInP based semiconductor laser device with such semiconductor making method.
In recent years, for DVD (digital versatile disc; Digital Versatile Di sc) III-V compound semiconductor (for example AlGaInP) based semiconductor laser device that uses in the driver, low, the good temp characteristic of operating voltage and can high output ground work etc. under high efficiency is to the performance demands strictness.In order to realize these, need be at the dopant profile of correct controlled doping thing of crystalline growth stage.
P type alloy as being used for the III-V compound semiconductor uses Zn usually, but in order to obtain precipitous dopant profile, wishes to select the alloy of difficult diffusion.For this reason, for example (Japan) spy opens flat 6-45708 communique, and (Japan) spy opens and put down in writing in the 2001-24278 communique, uses Mg to replace Zn as p type alloy.
The problem to be solved in the present invention is elaborated.
I) necessity of high outputization
In order to realize high output in semiconductor Laser device, the injection by minority carrier makes it brighter, and the absorption that reduces oscillation light becomes important.That is, wish that threshold current is low, efficient is high.This is because during the efficient difference, in order to export identical light output, needs very big electric current, and the chip temperature of semiconductor Laser device rises, and becomes the reason of deterioration, is difficult to further high outputization.
As the reason that efficient reduces, think owing to the absorption to oscillation light has increased.That is, its part is absorbed, becomes heat when improving light output, and the chip temperature of semiconductor Laser device is risen, and becomes the reason that makes the semiconductor Laser device deterioration.
Therefore, in the crystalline growth stage, require to the absorption of oscillation light less, efficient height, good crystallinity.From this point of view, as the p type alloy that is used for the III-V compound semiconductor, can enumerate Mg as favourable candidate.
Ii) alloy and dopant profile
When alloy spread to active layer, not only turmoil was arranged in the crystallization of active layer, and the crystallinity of active layer itself reduces, efficient reduces, and moreover, alloy itself also becomes absorber.Therefore, efficient further reduces, and reliability has also reduced.
In addition, the distribution in the active layer adjacent light broadens.Therefore, even alloy does not diffuse into active layer, if when having too much alloy at next-door neighbour active layer place, when particularly existing with the state that is not activated, these alloys also become absorber of light, become the reason that efficient reduces, reliability reduces.
On the other hand,,, then guarantee the crystallinity of active layer, also reduce the absorption that alloy causes in addition if increase not doped region in the active layer vicinity in order to make alloy not to the active layer diffusion.But, be difficult to be injected in the active layer owing to charge carrier becomes, so efficient reduces.In addition, under this situation, particularly during hot operation, charge carrier becomes and overflows easily, and temperature characterisitic worsens.
Therefore, wish that alloy exists sentencing degree enough and that exceed up to next-door neighbour's active layer, and in active layer, do not have alloy.That is, wish to have in the concentration of the contiguous alloy of active layer of semiconductor Laser device and go up the dopant profile (being called precipitous dopant profile) that sharply (roughly stepped) changes in crystalline growth direction (depth direction).
Iii) Mg mixes and lags behind
For example undertaken under the situation of crystalline growth by MOCVD (organometallic chemistry vapor phase growth) method, when using Mg, cause that Mg is adsorbed on alloy service between alloy material container and reactor (reacting furnace) (correctly say so to switch and supply with and the downstream part of the valve of non-supply) and waits upward and the phenomenon (being called " storage effect ") of accumulation as alloy.Therefore, generation Mg begins to flow out to the time lag (being called mixes lags behind) till in fact beginning to mix in crystallization from the alloy material container.In addition, after stopping to supply with Mg from the alloy material container, the Mg that is deposited in the alloy service also flow in the reactor, mixes in crystallization.
Like this, because the generation of storage effect, there is the problem of the dopant profile that is difficult to correctly to control Mg.
Iv) Mg diffusion front
When there is concentration difference in the atom in the crystallization, from the low side diffusion of the high direction concentration of concentration.In semiconductor Laser device, need separately to form the n type/p type that clips active layer, need to form n type, p type the alms giver, be subjected to main not being present in the active layer, fully be present in n type layer, the p type layer.That is, at active layer with clip between its n type layer, p type layer and produce very big concentration difference.The easy degree of diffusion is different with the kind of atom, even but doing with Mg under the situation of p type alloy, also can be owing to this concentration difference spreads.
At this, need control Mg to be diffused into undoped layer position (being called " diffusion front of Mg ") from doped layer.
Summary of the invention
Therefore, problem of the present invention is to be provided in the semiconductor making method that makes III-V compound semiconductor crystalline growth, can correctly controls the method for the dopant profile of Mg.
In addition, problem of the present invention is by adopting such semiconductor making method, provides and can make that threshold current is low, efficient is high, the semiconductor Laser device manufacture method of good temp characteristic and AlGaInP based semiconductor laser device that can high output services.
In order to address the above problem, manufacture method of the present invention is
III family element raw material, V group element raw material, Mg alloy raw material are being transported to the conversion zone by III family element raw material transportation route, V group element raw material transportation route, alloy raw material transportation route from III family pantogen material container, V group element material container, alloy material container respectively, in above-mentioned conversion zone, make III family element raw material and V group element raw material reaction, make the semiconductor making method of Mg doped with II I-V compound semiconductor layer crystalline growth then
Be provided with respectively in above-mentioned III family element raw material transportation route, V group element raw material transportation route, alloy raw material transportation route that III family elements fed/do not supply with switching part, V group element supply with/are not supplied with switching part, alloy supply with/is not supplied with switching part, switch by the raw material of this transportation route and supply with and do not supply with to above-mentioned conversion zone
On one side supply with/do not supply with switching part by above-mentioned III family elements fed/do not supply with switching part, V group element and supply with above-mentioned III family element raw material, V group element raw material respectively to above-mentioned conversion zone from above-mentioned III family pantogen material container, V group element material container, stop under the state of above-mentioned conversion zone supply Mg alloy raw material supplies with/not supplying with switching part by above-mentioned alloy on one side, make after the III-V compound semiconductor layer crystalline growth of doped with Mg not
Before making above-mentioned Mg doped with II I-V compound semiconductor layer crystalline growth, be provided with during the pre-stream, in during this period, stop to supply with above-mentioned III family element raw material by above-mentioned III family elements fed/do not supply with switching part on one side to above-mentioned conversion zone, one side from above-mentioned V group element material container, alloy material container by above-mentioned V group element supply with/do not supply with switching part, alloy supply with/is not supplied with switching part and is supplied with above-mentioned V group element raw material, Mg alloy raw material respectively to above-mentioned conversion zone.
At this, so-called " Mg doped with II I-V compound semiconductor layer " means the painstakingly III-V compound semiconductor layer of doped with Mg, and so-called " the not III-V compound semiconductor layer of doped with Mg " meaning is not have the painstakingly III-V compound semiconductor layer of doped with Mg.
In semiconductor making method of the present invention, by during above-mentioned pre-stream is set, the doping of having eliminated Mg lags behind, and the result is the abrupt dopant distribution figure that obtains Mg.Specifically, after making the III-V compound semiconductor layer crystalline growth of doped with Mg not, when flowing out Mg alloy raw material from the alloy material container, Mg alloy raw material is adsorbed on alloy raw material transportation route (alloy of correctly saying so supply with/is not supplied with the downstream part of switching part) and flow channel, chip tray etc. are upward piled up (storage effect).At this, in the present invention,, Mg alloy raw material is deposited in alloy raw material transportation route etc. fully and stabilisation by during above-mentioned pre-stream is set.Thereby, in the stage that makes above-mentioned Mg doped with II I-V compound semiconductor layer crystalline growth, provide the alloy raw material to above-mentioned conversion zone at once, can not cause that alloy lags behind above-mentioned Mg doped with II I-V compound semiconductor layer growth.Obtain precipitous dopant profile in view of the above.
In addition, by during above-mentioned pre-stream is set, the control of diffusion front becomes possibility.Specifically, the inventor finds, as long as under identical growth conditions, carry out, only otherwise during above-mentioned pre-stream, make the quantity delivered of Mg alloy raw material very big, the diffusion front of Mg does not just depend on the quantity delivered of Mg alloy raw material, and is determined by the doping of Mg in the above-mentioned Mg doped with II I-V compound semiconductor layer.Promptly, if can determine the doping of Mg in the above-mentioned Mg doped with II I-V compound semiconductor layer, the depth parts that has a diffusion front corresponding with it by prior formation is divided the undoped layer (the not III-V compound semiconductor layer of doped with Mg) of suitable thickness, can prevent that Mg is diffused in the active layer of semiconductor Laser device for example.That is, can control the position of diffusion front.
Like this, according to semiconductor making method of the present invention, can correctly control the dopant profile of Mg.
In the semiconductor making method of an execution mode, it is characterized in that above-mentioned each III-V compound semiconductor layer is the AlGaInP layer.
The semiconductor making method of this execution mode is applicable to easily makes the AlGaInP based semiconductor laser device.
The semiconductor making method of an execution mode is characterised in that, during above-mentioned pre-stream in, set the quantity delivered of above-mentioned Mg alloy raw material changeably.
In the semiconductor making method of this execution mode, can also correctly control the dopant profile of Mg, the result is the precipitous dopant profile that has obtained Mg.
At this, the quantity delivered of so-called " setting changeably " above-mentioned Mg alloy raw material is included in 2 grades or a plurality of grades more than 2 to be switched, and perhaps makes its continuous variation.
In addition, so-called " quantity delivered of Mg alloy raw material " meaning is the quantity delivered (not being the amount that in fact arrives the Mg alloy raw material of above-mentioned conversion zone by above-mentioned alloy raw material carrying path) of the Mg alloy raw material sent to above-mentioned conversion zone in the side of above-mentioned alloy material container.
As mentioned above, by during above-mentioned pre-stream is set, can not take place to mix lags behind, and can make above-mentioned Mg doped with II I-V compound semiconductor layer growth.But, only do like this, at not the III-V compound semiconductor layer of doped with Mg and the interface (being designated as doped interface) of Mg doped with II I-V compound semiconductor layer, also be not enough to obtain desirable stepped dopant profile.Known, Mg flows through after a little while in advance, and the early growth period of Mg doped with II I-V compound semiconductor layer does not reach the doping of hope, along with the crystalline growth doping slowly increases.On the contrary, Mg flows through for a long time in advance, though doping improves on doped interface,, once reduced crystalline growth along with mixing, and then rise (accumulation of Mg on doped interface).When further increase Mg flowed in advance, the accumulation of Mg became big on the doped interface, and big moving also takes place diffusion front, and the result is can not the controlled doping distribution map.In addition, much be not activated among the known Mg that is deposited on the doped interface, but be trapped on the doped interface.Therefore, in semiconductor Laser device, be suitable under the situation of this spline structure,, be difficult to high outputization because non-activated Mg causes efficient to reduce.
Therefore, during above-mentioned pre-stream in, set the quantity delivered of above-mentioned Mg alloy raw material changeably.For example, beginning during above-mentioned pre-stream, flow in advance so that accumulate Mg (first stream) in advance fully, last during above-mentioned pre-stream is set at the feeding that is suitable for making above-mentioned Mg doped with II I-V compound semiconductor layer growth (second stream) in advance with the quantity delivered of Mg.In view of the above, can obtain precipitous stepped dopant profile.
The semiconductor making method of an execution mode is characterized in that
Period two be divided into above-mentioned pre-stream during the first pre-stream and the second pre-stream subsequently during,
Quantity delivered with above-mentioned Mg alloy raw material during the above-mentioned first pre-stream is set at the first flow of Duoing than a feeding,
During the above-mentioned second pre-stream, the quantity delivered that will come from the above-mentioned Mg alloy raw material of above-mentioned alloy material container is set at second flow identical with above-mentioned feeding.
At this, so-called " feeding " (bodyguard reaches the body amount) refers to the quantity delivered of the above-mentioned Mg alloy raw material that is suitable for making above-mentioned Mg doped with II I-V compound semiconductor layer growth.
In the semiconductor making method of this execution mode, because during the above-mentioned first pre-stream, the quantity delivered of above-mentioned Mg doped raw material is set at the first flow of Duoing than certain feeding, so Mg fully is accumulated in the alloy raw material transport path.On the other hand, because during the above-mentioned second pre-stream, the quantity delivered that will come from the above-mentioned Mg alloy raw material of above-mentioned alloy material container is set at second flow identical with above-mentioned feeding, so the quantity delivered of above-mentioned Mg alloy raw material is stabilized in the above-mentioned feeding.The result is to obtain precipitous stepped dopant profile.
The semiconductor making method of one execution mode is characterized in that
Period two be divided into above-mentioned pre-stream during the first pre-stream and the second pre-stream subsequently during,
During the above-mentioned first pre-stream, the quantity delivered of above-mentioned Mg alloy raw material is set at the activation rate that makes Mg in the above-mentioned Mg doped with II I-V compound semiconductor layer and is the first flow below 50%,
During the above-mentioned second pre-stream, it is second flow more than 80% that the quantity delivered of above-mentioned Mg alloy raw material is set at the activation rate that makes Mg in the above-mentioned Mg doped with II I-V compound semiconductor layer.
The inventor has studied the ratio (activation rate) that becomes the activation charge carrier among the Mg that mixes.Found that activation rate culminates when increasing the doping of Mg gradually.That is, when increasing Mg alloy flow gradually, the Mg atom enters into crystallization, but the quantity that does not work as charge carrier increases.In order to raise the efficiency, be necessary to make the activation rate of Mg in the above-mentioned Mg doped with II I-V compound semiconductor layer to improve.But when only flowing in advance under the flow (quantity delivered of Mg alloy raw material) that the activation rate that makes Mg uprises, flow is too small, can not fully carry out Mg accumulating to alloy raw material transport path.Therefore, can not obtain precipitous dopant profile.
At this, in the semiconductor making method of this execution mode, the period two be divided into above-mentioned pre-stream during the first pre-stream and the second pre-stream subsequently during.And, during the above-mentioned first pre-stream, the quantity delivered of above-mentioned Mg alloy raw material is set at the activation rate that makes Mg in the above-mentioned Mg doped with II I-V compound semiconductor layer and is the first flow below 50%.In view of the above, Mg fully is accumulated in the alloy raw material transport path.On the other hand, during the above-mentioned second pre-stream, it is second flow more than 80% that the quantity delivered of above-mentioned Mg alloy raw material is set at the activation rate that makes Mg in the above-mentioned Mg doped with II I-V compound semiconductor layer.In view of the above, the quantity delivered of above-mentioned Mg alloy raw material is stabilized in the above-mentioned feeding.The result is, obtains precipitous stepped dopant profile, do not have the Mg of non-activity simultaneously in doped interface, and the charge carrier by activation can access precipitous dopant profile.
In addition, during above-mentioned pre-stream, be necessary to interrupt crystalline growth.But when the crystalline growth intercourse was elongated, the crystallinity of the bed boundary of interruption significantly reduced, and became the reason that component reliability reduces and performance reduces.Wish that the length during the above-mentioned pre-stream is short as far as possible.
At this, the semiconductor making method of an execution mode is characterized in that
Period two be divided into above-mentioned pre-stream during the first pre-stream and the second pre-stream subsequently during,
More than 5 times below 20 times of the above-mentioned Mg alloy raw material supplying amount of during the value of the quantity delivered of the above-mentioned Mg alloy raw material of setting during the above-mentioned first pre-stream is the above-mentioned second pre-stream, setting.
In the semiconductor making method of this execution mode, the value below 20 times more than 5 times of the above-mentioned Mg alloy raw material supplying amount of during the quantity delivered of the above-mentioned Mg alloy raw material of setting during the above-mentioned first pre-stream is the above-mentioned second pre-stream, setting.In view of the above, can during the above-mentioned first pre-stream, make Mg adsorb effectively, be accumulated in the alloy raw material transport path.And, during the above-mentioned second pre-stream, can make the quantity delivered stabilisation of above-mentioned Mg alloy raw material.The result is, can correctly control the dopant profile of Mg, and the length integral body during the above-mentioned pre-stream is shortened.
In addition, the semiconductor making method of an execution mode is characterized in that
Period two be divided into above-mentioned pre-stream during the first pre-stream that quantity delivered with above-mentioned Mg alloy raw material is set at first flow and subsequently, the quantity delivered of above-mentioned Mg alloy raw material is set at the second pre-stream of second flow during,
With the length setting during the above-mentioned first pre-stream be shorter than the length during the above-mentioned second pre-stream, and the length during the above-mentioned first flow and the above-mentioned first pre-stream long-pending is set at greatly long-pending than the length during above-mentioned second flow and the above-mentioned second pre-stream.
In the semiconductor making method of this execution mode, with the length setting during the above-mentioned first pre-stream be shorter than the length during the above-mentioned second pre-stream, and the length during the above-mentioned first flow and the above-mentioned first pre-stream long-pending is set at greatly long-pending than the length during above-mentioned second flow and the above-mentioned second pre-stream.In view of the above, during the above-mentioned first pre-stream, can make Mg adsorb effectively, be accumulated in the alloy raw material transport path.In addition, since during the above-mentioned second pre-stream than long during the above-mentioned first pre-stream, so during the above-mentioned second pre-stream, can make the quantity delivered stabilisation of above-mentioned Mg alloy raw material.The result is, can correctly control the dopant profile of Mg, and the length integral body during the above-mentioned pre-stream is shortened.
Like this, wish the first pre-stream make above-mentioned Mg alloy raw material in the time of relatively lacking with big traffic flow, make Mg adsorb effectively, be accumulated in the alloy raw material transport path.On the other hand, wish that the second pre-stream makes flow be reduced to feeding, carry out stabilisation with relatively changing time ground.
In the semiconductor making method of an execution mode, it is characterized in that above-mentioned Mg alloy raw material is two-cyclopentadienyl magnesium or two-ethyl cyclopentadienyl magnesium.
Because in the semiconductor making method of this execution mode, above-mentioned Mg alloy raw material is two-cyclopentadienyl magnesium (Cp2Mg) or two-ethyl cyclopentadienyl magnesium (ethyl Cp2Mg), so in fact can correctly control the dopant profile of Mg.
The manufacture method of semiconductor Laser device of the present invention is the manufacture method that comprises the semiconductor Laser device of above-mentioned semiconductor making method,
Be included on the n type GaAs substrate, pass through mocvd method, make n type AlGaInP covering, multiple quantum trap active layer in order, as the not doped with Al GaInP covering of the III-V compound semiconductor layer of above-mentioned not doped with Mg with as the operation of the Mg doped with Al GaInP covering crystalline growth of above-mentioned Mg doped with II I-V compound semiconductor layer
It is characterized in that after making above-mentioned not doped with Al GaInP covering growth, before above-mentioned Mg doped with Al GaInP covering growth, being provided with during the above-mentioned pre-stream.
According to semiconductor Laser device manufacture method of the present invention, can make that threshold current is low, efficient is high, good temp characteristic and AlGa InP based semiconductor laser device that can high output services.
Brief description of drawings
Accompanying drawing by following detailed description and interpolation can fully understand the present invention.The accompanying drawing that adds just is used for explanation, does not limit the present invention.In the accompanying drawings,
Fig. 1 is the figure of expression by the cross-section structure of the AlGaInP based semiconductor laser device of the semiconductor Laser device manufacture method making of an embodiment of the present invention.
Fig. 2 A is the process chart of the manufacturing process of the above-mentioned AlGaInP based semiconductor laser device of explanation.
Fig. 2 B is the process chart of the manufacturing process of the above-mentioned AlGaInP based semiconductor laser device of explanation.
Fig. 2 C is the process chart of the manufacturing process of the above-mentioned AlGaInP based semiconductor laser device of explanation.
Fig. 3 A is the growth pressure of expression MOCVD, the sequential chart of growth temperature.
Fig. 3 B is the sequential chart under the situation of the expression pre-stream of 2 stages that carries out the Mg alloy.
Fig. 4 is that expression does not have the dopant profile under the pre-situation that flows of Mg.
Fig. 5 is the figure of the relation of the expression activation rate of Mg and Cp2Mg flow.
Fig. 6 is the dopant profile under the situation of the expression pre-stream of 1 stage that carries out the Mg alloy.
Fig. 7 is the dopant profile under the situation that flows in advance in 2 stages of expression Mg alloy.
Fig. 8 is the figure that represents to set changeably the variation of diffusion front under the situation of Mg inlet amount.
Fig. 9 is the figure of expression for the structure of the used MOCVD of the semiconductor making method of implementing an embodiment of the present invention.
Detailed description of the invention
Below by illustrated execution mode the present invention is described in further detail.
(first execution mode)
Fig. 9 is the figure of the MOCVD apparatus structure of the expression semiconductor making method that is used to implement an execution mode.
This MOCVD device comprises: as the reacting furnace (reactor) 101 of conversion zone, hold hydrogen hydrogen tank 109, hold SiH
4The SiH of gas
4Material container 110, hold V group element raw material A sH
3The AsH of gas
3Material container 111, hold V group element raw material PH
3The PH of gas
3Material container 112, hold DEZ (diethyl zinc) DEZ material container 113, hold Cp2Mg material container 114 as the Cp2Mg of Mg alloy raw material, hold the element raw material TMG of III family (trimethyl gallium) TMG material container 115, hold the TMA material container 116 of the element raw material TMA of III family (trimethyl aluminium) and hold the TMI material container 117 of the element raw material TMI of III family (trimethyl indium).
Many trunk line 120,121,122,123,124 extends to reacting furnace (reactor) 101 from hydrogen tank 109, and breather pipe 130 extends to pump 106 simultaneously.Collaborate by each valve 110B, 111B, 112B, 113B, 114B, 115B, 116B, 117B and trunk line 121,122,123,124 from pipeline 110A, 111A, 112A, 113A, 114A, 115A, 116A, the 117A of each material container 110,111,112,113,114,115,116,117, simultaneously by each valve 110C, 111C, 112C, 113C, 114C, 115C, 116C, 117C and breather pipe 130 interflow.SiH
4Gas, AsH
3Gas, PH
3Gas is transported in the reacting furnace 101 with the state that is diluted in the hydrogen by each corresponding pipeline.In addition, DEZ, Cp2Mg, TMG, TMA, TMI are transported in the reaction road 101 by each corresponding pipeline to sneak into the state in the hydrogen that is foamed by the hydrogen that comes from hydrogen tank 109 as steam.In addition, each raw material is supplied under the situation of reacting furnace 101 from container, switch to and open valve 110B～117B, shut off valve 110C～117C.On the other hand, each raw material is not supplied under the situation of reacting furnace 101 from container, switch to shut off valve 110B～117B, open valve 110C～117C.That is, Dui Ying each constitutes the supply of each raw material/do not supply with switching part to valve (110B, 110C), (111B, 111C)～(117B, 117C).In addition, how much each raw material supplying amount is controlled by the mass flow controller of symbolically among the figure.In the outlet of each gas container the pressure-reducing valve of symbolically among the figure is set, controls air pressure thus.
In reacting furnace 101, be provided with and gas channel 102, the eyelid retractor 103 that is supported on the compound semiconductor wafer 20 that becomes the crystalline growth object in this gas channel 102 that the gas stream that provides crosses be provided and below eyelid retractor 103, be connected the heater block 104 that is provided with.In addition, in this device, eyelid retractor 103 also has the function of wafer carrier concurrently, but also can be on eyelid retractor 103 the mounting wafer carrier.By the control of not shown temperature regulation section the energising amount that feeds heater block 104 is carried out FEEDBACK CONTROL, the temperature (being the temperature of compound semiconductor wafer 20) of heater block 104 is set at target temperature.Below reacting furnace 101, be arranged on the controlling organization 105 that compound semiconductor wafer 20 and eyelid retractor 103, heater block 104 are rotated simultaneously.Vario valve by symbolically among the figure is carried out vacuum exhaust by pump 106, and the pressure in the reacting furnace 101 is set at goal pressure.Device 107 becomes harmless state with pump-down process by removing the evil.
When carrying out crystalline growth by this MOCVD device, shown in the epimere of Fig. 3 A, the pressure in the reacting furnace 101 is controlled to be goal pressure (growth pressure), in this example 75 holders.In addition, shown in the hypomere of Fig. 3 A, the temperature of compound semiconductor wafer 20 is controlled to be target temperature (growth temperature), in this example, is controlled to be 700 ℃.Respectively the pressure in the reacting furnace 101 are maintained goal pressure, with the temperature of compound semiconductor wafer 20 be controlled to be target temperature during in, carry out actual crystalline growth (t0 during the crystalline growth).In addition, during crystalline growth, set in the t0 make that Mg alloy raw material Cp2Mg flows through during t1.
Next the semiconductor making method of an execution mode of above-mentioned MOCVD device is adopted in explanation.
1) Mg mixes and studies
The growth sequential that the inventor represents according to Fig. 3 B, on not shown GaAs substrate, crystalline growth is as the not doping (Al of the III-V compound semiconductor layer of doped with Mg not in order
0.7Ga
0.3)
0.511In
0.489P layer (thickness 0.2 μ m), as the Mg of the Mg doped with II I-V compound semiconductor layer (Al that mixes
0.7Ga
0.3)
0.511In
0.489P layer (thickness 1 μ m).In addition, in Fig. 3 B, above-mentioned each layer slightly is designated as not doped with Al GaInP layer, Mg doped with Al GaInP layer respectively.The solid line of each raw material represents that the supply of this raw material/do not supply with switching part is " supplys ", and dotted line represents that the supply of this raw material/do not supply with switching part is " not supplying with ".
Known to from Fig. 3 B, in this growth sequential, after making not doped with Al GaInP layer crystalline growth, before making Mg doped with Al GaInP layer crystalline growth, t11, t12 during the pre-stream are set.T11, t12 during this pre-stream stop the supply of the element raw material TMG of III family, TMA, TMI, on the other hand, make V group element raw material PH
3Cp2Mg flows through with Mg alloy raw material.
In this example, with flow in advance the period two be divided into t11 during the first pre-stream and subsequently second flow in advance during t12, among the t11 quantity delivered of Cp2Mg is set at first flow during the first pre-stream, among the t12 quantity delivered of Cp2Mg is set at second flow that lacks than above-mentioned first flow during the second pre-stream.With the length setting of t12 during the second pre-stream is longer than the length of t11 during the first pre-stream.
The inventor is not limited to the example represented among Fig. 3 B, pre-stream condition is carried out various changes grow.Therefore, study dopant profile to carry out SIMS (secondary ion mass spectrometry) mensuration by each condition manufactured samples.
2) not pre-stream
At first, the inventor studies the condition that does not flow in advance.Specifically, continuous crystallisation grow not Doped GaAs layer and Mg doped with Al GaInP layer are studied dopant profile with SIMS.Fig. 4 represented under this condition, the dopant profile when in the growth of Mg doped with Al GaInP layer the flow of Cp2Mg being carried out various the setting.
As can be seen from Figure 4, when the Cp2Mg flow hangs down when 5ccm, 10ccm (for example), do not enter in the crystallization after the supply of beginning Cp2Mg, enter in the crystallization after having placed for a moment at once.When increasing the Cp2Mg flow gradually, mix to lag behind disappear, become the state that doping increases gradually when 17ccm (for example).When the Cp2Mg flow further increases, on doped interface, pile up when 50ccm, 100ccm (for example).Like this, if not pre-stream is difficult to correct controlled doping distribution map.
In addition, describe in detail below, because when increasing the Cp2Mg flow, activation rate reduces, so be not suitable for the doping of covering.The P covering generally carries out 1 * 10
18Cm
-3About doping.But in order to set this carrier concentration in the high zone of activation rate, being necessary to make the Cp2Mg flow is about 5ccm～10ccm.But in this range of flow, can take place as mentioned above to mix lags behind, and can not mix near active layer.
3) activation rate
In addition, for the same sample that does not flow in advance, carry out the mensuration of carrier concentration with the C-V method.
Fig. 5 represents the result of the Mg activation rate that the ratio of the atomic concentration that the carrier concentration measured by the C-V method and SIMS measure is obtained.
As can be seen from Figure 5, when increasing the Cp2Mg flow gradually, activation rate reduces.The carrier concentration of covering is generally 1 * 10
18Cm
-3About carry out, no matter the activation rate height still is low zone to this Cp2Mg flow can set.But, under the situation of in covering, mixing, be necessary in the high zone of activation rate, to mix.When activation rate hanged down, the Mg atom that works as active charge carrier did not absorb laser, caused efficient to reduce.In addition, inactive Mg atom moves easily, spreads during Laser Driven, also causes the crystalline deterioration of active layer.
4) 1 stage flowed in advance
Below, the inventor is to the situation of pre-stream of 1 stage, and pre-stream flow is that certain situation is studied during the promptly pre-stream.Specifically, after making not doped with Al GaInP layer crystalline growth, before Mg doped with Al GaInP layer crystalline growth, stop the supply of the element raw material TMG of III family, TMA, TMI, on the other hand, make V group element raw material PH
3Cp2Mg flows through with certain flow with Mg alloy raw material.Fig. 6 is illustrated under the situation of pre-stream of 1 stage, the dopant profile when the pre-stream flow of Cp2Mg and pre-stream time are carried out various the setting.
As can be seen from Figure 6, when the pre-flow of Mg increased gradually, mixing lags behind was eliminated.This expression can overcome Cp2Mg absorption and be accumulated in corresponding pipeline (trunk line 123 parts in the valve 114B downstream of correctly saying so) or the phenomenon (storage effect) on flow channel 102, the eyelid retractor 103 etc.By carrying out the pre-stream of Mg to a certain degree, can not mix and mix with lagging behind.Thereby as the condition of 1 section pre-stream, the Cp2Mg flow bigger than feeding is effective.
But when increasing the pre-flow of Mg gradually (100ccm/45 second), Mg is deposited on the doped interface, reduces in case mix, and mixing becomes increases gradually.And when increasing the pre-flow of Mg (100ccm/60 second), Mg is deposited on the doped interface to a great extent, and diffusion front is also transferred to not in the doped with Al GaInP layer.
In pre-stream of 1 stage, can solve doping hysteresis problem like this, but correct controlled doping distribution map.
5) 2 stages flowed in advance
Next, the inventor has studied the situation of pre-streams of 2 stages, i.e. the situation that pre-stream flow changed in 2 stages during pre-stream.Specifically, after making not doped with Al GaInP layer crystalline growth, before making Mg doped with Al GaInP layer crystalline growth, shown in Fig. 3 B, be provided with t11 during the first pre-stream and subsequently second flow in advance during t12, t11 is set at first flow with the quantity delivered of Cp2Mg during the first pre-stream, and t12 is set at second flow that lacks than above-mentioned first flow with the quantity delivered of Cp2Mg during the second pre-stream.。
Fig. 7 represents that the length of t12 is 5 minutes during the fixing Cp2Mg flow (second flow) of setting t12 during the second pre-stream is for feeding 8ccm, the second pre-stream, fixing simultaneously set the Cp2Mg flow (first flow) of t11 during the first pre-stream be 100ccm, changeably set first flow in advance during dopant profile during the length of t11.In addition, the meaning of so-called this Cp2Mg " flow " is not the actual flow of raw material, but the foaming flow (there are proportional relation in the actual flow of raw material and foaming flow.)。
As can be seen from Figure 7, under the situation of pre-stream of 2 stages, do not see big accumulation in doped interface, the drop of doped interface Mg has also disappeared, and can access precipitous stepped dopant profile.
When increasing the Cp2Mg flow of t11 during the first pre-stream, raise a little in doped interface Mg concentration.On the contrary, when reducing the Cp2Mg flow of t11 during the first pre-stream, reduce a little in doped interface Mg concentration.Thereby, by with the Cp2Mg flow set of t11 during the first pre-stream for the most suitable, can obtain precipitous stepped dopant profile.
In addition, can know that under the situation of pre-stream of 2 stages, change even flow condition (length during the pre-stream during Cp2Mg flow, the pre-stream) in advance, diffusion front can not move yet.
During the condition of under the situation of pre-stream of 2 stages of above-mentioned interpretation, wishing, be listed below.
I) t11 during the first pre-stream, with the first flow of Cp2Mg flow set for Duoing than the feeding that is used for Mg doped with Al GaInP layer, t12 during the second pre-stream with the Cp2Mg flow set is and the second identical flow of feeding that is used for above-mentioned Mg doped with Al GaInP layer.
I i) t11 during the first pre-stream, with the Cp2Mg flow set is that to make the activation rate of the Mg in the Mg doped with Al GaInP layer be first flow below 50%, t12 during the second pre-stream, with the Cp2Mg flow set for the activation rate that makes the Mg in the Mg doped with Al GaInP layer be second flow below 80%.
Iii) making t11 sets during the first pre-stream Cp2Mg flow is the value below 20 times more than 5 times of the Cp2Mg flow that t12 sets during the second pre-stream.
Iv) the length setting with t11 during the first pre-stream is shorter than the length of t12 during the second pre-stream, and satisfies
(first flow) * (length of t11 during the first pre-stream)
(second flow) * (length of t12 during the second pre-stream).
6) Cp2Mg feeding and diffusion front
Next, the inventor under the situation of carrying out pre-stream of 2 stages, carries out various variable settings to the Cp2Mg feeding that is used for Mg doped with Al GaInP layer after making not doped with Al GaInP layer growth.Fig. 8 represents the dopant profile of this moment.
As can be seen from Figure 8, even change the feeding of Cp2Mg, the shape of dopant profile is also constant, obtains precipitous dopant profile.But, can know, though when changing the feeding of Cp2Mg, the shape invariance of dopant profile, diffusion front changes.That is, along with the feeding of Cp2Mg becomes many from 5ccm to 10ccm, diffusion front deeper moves to not in the doped with Al GaInP layer successively.
In addition, for the structure of length by pipeline and reactor, flow channel shape etc. or growth temperature and V/III such as compare at Cp2Mg flow and time and the diffusion front that growth conditions changes pre-stream, according to the MOCVD device that uses, growth conditions and only pre-stream condition difference.But, no matter be which type of MOCVD device, by selecting only condition in the pre-stream of 2 stages, can solve the problem of mixing and lagging behind, obtain precipitous stepped dopant profile.
(second execution mode)
Fig. 1 represents the cross-section structure by the emitting red light AlGaInP based semiconductor laser device of the semiconductor Laser device manufacture method making of an execution mode.
This semiconductor Laser device comprises on n-GaAs substrate (inclined plane with 15 °) 1: alternately laminated a plurality of n-Ga
0.508In
0.492P intermediate layer (thickness 0.25 μ m) 2, n-(Al
0.684Ga
0.316)
0.511In
0.489P the one N covering (thickness 2.6 μ m) 3, n-(Al
0.7Ga
0.3)
0.511In
0.489P the 2nd N covering (thickness 0.2 μ m) 4, (Al
0.545Ga
0.455)
0.511In
0.489P guide layer (thickness 35nm) 5, Ga
0.445In
0.555P trap layer (thickness 5nm) 6 and (Al
0.545Ga
0.455)
0.511In
0.489The multiple quantum trap active layer that P barrier layer (thickness 6.3nm) 7 the constitutes, (Al that mixes
0.7Ga
0.3)
0.511In
0.489P covering (thickness 35nm) 8, p-(Al
0.7Ga
0.3)
0.511In
0.489P the one P covering (thickness 0.237 μ m) 9, p-Ga
0.623In
0.377P etching cut-off layer (thickness 13nm) 10, p-(Al
0.7Ga
0.3)
0511In
0.489P the 2nd P covering (thickness 1.2 μ m) 11, p-Ga
0.508In
0.492P intermediate layer (thickness 35nm) 12 and p-GaAs top layer (thickness 0.5 μ m) 13.
The multiple quantum trap active layer is 4MQW (multiple quantum trap) multiple quantum well layer that contains 4 trap layers 6 at this example.
This semiconductor Laser device is according to the order manufacturing of representing among Fig. 2 A～Fig. 2 C.
At first, shown in Fig. 2 A, on Si Doped GaAs substrate 1,, form Si doping Ga in order by mocvd method
0.508In
0.492P layer (thickness 0.25 μ m, concentration 1 * 10
18Cm
-3) 2, the Si (Al that mixes
0.684Ga
0.316)
0.511In
0.489P the one N covering (thickness 2.6 μ m, concentration 3 * 10
17Cm
-3) 3, the Si (Al that mixes
0.7Ga
0.3)
0.511In
0.489P the 2nd N covering (thickness 0.2 μ m, concentration 3 * 10
17Cm
-3) 4 and (the Al that mixes
0.545Ga
0.455)
0.511In
0.489P guide layer (thickness 35nm) 5.Then form thereon by the alternately laminated a plurality of Ga of doping of mocvd method
0.445In
0.555The P trap layer (thickness 5nm) 6 and the (Al that do not mix
0.545Ga
0.455)
0.511In
0.489The 4MQW active layer that P barrier layer (thickness 6.3nm) 7 constitutes.Then form (the Al that do not mix in order by mocvd method thereon
0.545Ga
0.455)
0.511In
0.489The P guide layer (thickness 35nm) 5 and the (Al that do not mix
0.7Ga
0.3)
0.511In
0.489P covering (thickness 35nm) 8, during pre-stream is set after, form the Mg (Al that mixes in order
0.7Ga
0.3)
0.511In
0.489P the one P covering (thickness 0.237 μ m, concentration 1.075 * 10
18Cm
-3) 9, Mg doping Ga
0.623In
0.377P etching cut-off layer (thickness 13nm) 10, the Mg (Al that mixes
0.7Ga
0.3)
0.511In
0.489P the 2nd P covering (thickness 1.2 μ m, concentration 1.075 * 10
18Cm
-3) 11, Mg doping Ga
0.508In
0.492P intermediate layer (thickness 35nm, concentration 2.5 * 10
18Cm
-3) 12 and Zn Doped GaAs top layer (thickness 0.5 μ m, concentration 1 * 10
19Cm
-3) 13.
Ga, Al, In, As, the P raw material of MOCVD growth are used TMG (trimethyl gallium) (20 ℃), TMA (trimethyl aluminium) (20 ℃), TMI (trimethyl indium) (25 ℃), AsH respectively
3(arsenous hydricde), PH
3(hydrogen phosphide), dopant gas n type SiH
4(monosilane), p type Cp2Mg (20 ℃) and DEZ (diethyl zinc) (20 ℃).Growth temperature is carried out at 700 ℃ except that the Zn-GaAs top layer.
Do not mix after the covering 8 in growth, mix before the growth of a P covering 9 carrying out Mg, be provided with as mentioned above during the pre-stream.Shown in Fig. 3 B, should flow the period two in advance and be divided into during the first pre-stream t12 during the t11 and the second pre-stream, carried out for 2 stages and flow in advance.Specifically, as pre-stream condition, t11 is 75 seconds under Cp2Mg=100ccm during the first pre-stream, and t12 is 5 minutes under feeding (Cp2Mg=8ccm) during the second pre-stream.
For P covering 9, be 1.075 * 10 in order to make carrier concentration
18Cm
-3, the flow that makes Cp2Mg is 8ccm.
Utilize common photoetching technique to form the wide mask of 3 μ m thereon, shown in Fig. 2 B, utilize dry ecthing to remove mask p-GaAs top layer 13, p-GaInP intermediate layer 12 and p-(Al in addition
0.7Ga
0.3)
0.511In
0.489P the 2nd P covering 11 forms strip.
After removing the mask on the ridge, comprehensive evaporation SiN film 14.
Comprehensive thereon painting erosion resistant agent, blanket exposure by adjusting developing time, is removed the mountain shaped protrusions portion of resist up to above-mentioned ridge top and is displayed.The resist that becomes on the ridge is removed, the residual state of resist that ridge is outer.Under this state, carry out etching, shown in Fig. 2 C, remove the SiN film 14 that forms on the ridge with the buffering dopant acid.
Remove resist then,, form AuZn/Au electrode 15a by evaporation in the p side, at n side evaporation AuGe/Ni/Au electrode 15b with the thickness of wafer grinding to 100 μ m.
On the direction vertical,, form refractive index in its both ends of the surface by evaporation and be respectively 5%/90% Si film and Al with the length cleavage of 1.5mm with the band that becomes resonator
2O
3Film.
At last, cut apart band separately, be installed in and finish semiconductor Laser device on the base.
When on the semiconductor Laser device of making like this, applying the pulse current of duty (デ ュ-テ ィ-) 50%, vibrate with oscillation wavelength 658nm (25 ℃).Oscillation threshold current is 42mA, and efficient is 1.1W/A.When increasing electric current, 500mW does not cause COD (Catastrophic Opt ical Damage: flood tide optical damage up to output; The end face melanism of semiconductor Laser device) vibrates.To=140K, the characteristic temperature height obtains good characteristic.
By p-(Al
0.7Ga
0.3)
0.511In
0.489The doping of P the one P covering 9 changes the amount of movement of Mg towards the diffusion front of active layer direction.For the diffusion front that makes Mg does not reach active layer, regulate (the Al that do not mix
0.7Ga
0.3)
0.511In
0.489The bed thickness of P covering 8 can make Mg not to the active layer diffusion, and obtain precipitous dopant profile.
Like this, in this semiconductor Laser device manufacture method, by flowing Mg in advance with the flow more than the feeding, can avoid at short notice mixing lags behind.Particularly, flow in advance, can avoid the accumulation of doped interface Mg by carrying out for 2 stages.In addition, thick by the undoped layer before the control Mg doped layer, can make the diffusion front of Mg and the distance that active layer is stipulated at interval.
Like this by realizing the precipitous dopant profile of Mg, and the control diffusion front can make threshold current reduction, the efficient of semiconductor Laser device improve, and temperature characterisitic improves, reliability improves, and can realize the high output semiconductor laser diode that 300mW is above.
In addition, the layer structure of semiconductor Laser device, composition, thickness, carrier concentration are not limited to the value of present embodiment certainly.In addition, material category also is not limited only to AlGaInP.Growth conditions also is not limited to above-mentioned condition.
Embodiments of the present invention have been described above, but also can have carried out various changes as can be known it.Such change should not be considered as breaking away from the spirit and scope of the present invention, and self-explantory for those skilled in the art change all is included in the scope of claim.
Claims (9)
1. semiconductor making method, III family element raw material, V group element raw material, Mg alloy raw material are being transported to conversion zone from III family pantogen material container, V group element material container, alloy material container by III family element raw material transportation route, V group element raw material transportation route, alloy raw material transportation route respectively, at above-mentioned conversion zone III family element raw material and V group element raw material are reacted, so that Mg doped with II I-V compound semiconductor layer crystalline growth is characterized in that:
Be provided with respectively at above-mentioned III family element raw material transportation route, V group element raw material transportation route, alloy raw material transportation route that III family elements fed/do not supply with switching part, V group element supply with/are not supplied with switching part, alloy supply with/is not supplied with switching part, switch by the raw material of this transportation route and supply with and do not supply with to above-mentioned conversion zone
Supply with/do not supply with switching part from above-mentioned III family pantogen material container, V group element material container by above-mentioned III family elements fed/do not supply with switching part, V group element and supply with above-mentioned III family element raw material, V group element raw material respectively to above-mentioned conversion zone, stop to supply with under the state of Mg alloy raw material supply with/not supplying with switching part by above-mentioned alloy on the other hand to above-mentioned conversion zone, make after the III-V compound semiconductor layer crystalline growth of doped with Mg not
Before making above-mentioned Mg doped with II I-V compound semiconductor layer crystalline growth, be provided with during the pre-stream, stop to supply with above-mentioned III family element raw material by above-mentioned III family elements fed/do not supply with switching part to above-mentioned conversion zone, on the other hand, from above-mentioned V group element material container, alloy material container by above-mentioned V group element supply with/do not supply with switching part, alloy supply with/is not supplied with switching part and is supplied with above-mentioned V group element raw material, Mg alloy raw material respectively to above-mentioned conversion zone.
2. semiconductor making method as claimed in claim 1 is characterized in that, above-mentioned each III-V compound semiconductor layer is the AlGaInP layer.
3. semiconductor making method as claimed in claim 1 is characterized in that, during above-mentioned pre-stream in, set the quantity delivered of above-mentioned Mg alloy raw material changeably.
4. semiconductor making method as claimed in claim 3 is characterized in that,
Period two be divided into above-mentioned pre-stream during the first pre-stream and the second pre-stream subsequently during,
During the above-mentioned first pre-stream, the quantity delivered of above-mentioned Mg alloy raw material is set at the first flow of Duoing than a feeding,
During the above-mentioned second pre-stream, the quantity delivered that will come from the above-mentioned Mg alloy raw material of above-mentioned Mg alloy material container is set at second flow identical with above-mentioned feeding.
5. semiconductor making method as claimed in claim 3 is characterized in that,
Period two be divided into above-mentioned pre-stream during the first pre-stream and the second pre-stream subsequently during,
During the above-mentioned first pre-stream, it is first flow below 50% that the quantity delivered of above-mentioned Mg alloy raw material is set at the activation rate that makes Mg in the above-mentioned Mg doped with II I-V compound semiconductor layer,
During the above-mentioned second pre-stream, it is second flow more than 80% that the quantity delivered of above-mentioned Mg alloy raw material is set at the activation rate that makes Mg in the above-mentioned Mg doped with II I-V compound semiconductor layer.
6. semiconductor making method as claimed in claim 3 is characterized in that,
Period two be divided into above-mentioned pre-stream during the first pre-stream and the second pre-stream subsequently during,
Making the quantity delivered at the above-mentioned Mg alloy raw material of setting during above-mentioned first pre-the stream is the value below 20 times more than 5 times of the quantity delivered of the above-mentioned Mg alloy raw material of setting during the above-mentioned second pre-stream.
7. semiconductor making method as claimed in claim 3 is characterized in that,
Period two be divided into above-mentioned pre-stream during the first pre-stream and the second pre-stream subsequently during, quantity delivered with above-mentioned Mg alloy raw material during the above-mentioned first pre-stream is set at first flow, quantity delivered with above-mentioned Mg alloy raw material during the above-mentioned second pre-stream is set at second flow
With the length setting during the above-mentioned first pre-stream be shorter than the length during the second pre-stream, and length during the above-mentioned first flow and the above-mentioned first pre-stream long-pending is set at greatly long-pending than length during above-mentioned second flow and the above-mentioned second pre-stream.
8. semiconductor making method as claimed in claim 1 is characterized in that, above-mentioned Mg alloy raw material is two-cyclopentadienyl magnesium or two-ethyl cyclopentadienyl magnesium.
9. a semiconductor Laser device manufacture method comprises semiconductor making method as claimed in claim 1, it is characterized in that,
Be included on the n type GaAs substrate, by mocvd method make n type AlGaInP covering, multiple quantum trap active layer in order, as the not doped with Al GaInP covering of the III-V compound semiconductor layer of above-mentioned not doped with Mg with as the operation of the Mg doped with Al GaInP covering crystalline growth of above-mentioned Mg doped with II I-V compound semiconductor layer
After making above-mentioned not doped with Al GaInP covering growth, before making above-mentioned Mg doped with Al GaInP covering growth, be provided with during the above-mentioned pre-stream.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP190274/06 | 2006-07-11 | ||
| JP2006190274A JP2008021717A (en) | 2006-07-11 | 2006-07-11 | Method of manufacturing semiconductor, and method of manufacturing semiconductor laser element |
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| Publication Number | Publication Date |
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| CN101136324A true CN101136324A (en) | 2008-03-05 |
| CN100511590C CN100511590C (en) | 2009-07-08 |
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| Application Number | Title | Priority Date | Filing Date |
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| CNB2007101821532A Expired - Fee Related CN100511590C (en) | 2006-07-11 | 2007-07-11 | Semiconductor manufacturing method and semiconductor laser device manufacturing method |
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| Country | Link |
|---|---|
| US (1) | US7556977B2 (en) |
| JP (1) | JP2008021717A (en) |
| CN (1) | CN100511590C (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102782808A (en) * | 2009-12-10 | 2012-11-14 | 同和电子科技有限公司 | P-type AlGaN layer, method for producing same and group III nitride semiconductor light-emitting element |
| CN102971871A (en) * | 2010-07-06 | 2013-03-13 | 昭和电工株式会社 | Epitaxial wafer for light-emitting diodes |
| WO2014088030A1 (en) * | 2012-12-04 | 2014-06-12 | 住友電気工業株式会社 | Nitride semiconductor light-emitting element and method for manufacturing nitride semiconductor light-emitting element |
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| JP5387509B2 (en) * | 2010-06-02 | 2014-01-15 | 信越半導体株式会社 | Epitaxial wafer manufacturing method |
| CN103050595A (en) * | 2012-12-28 | 2013-04-17 | 厦门市三安光电科技有限公司 | Nitride light emitting diode |
| KR102098937B1 (en) * | 2014-01-27 | 2020-04-08 | 엘지이노텍 주식회사 | Light emitting device |
| JP2016157734A (en) * | 2015-02-23 | 2016-09-01 | 豊田合成株式会社 | Group iii nitride semiconductor light emitting element manufacturing method |
| JP6662092B2 (en) * | 2016-02-23 | 2020-03-11 | 株式会社デンソー | Method for manufacturing compound semiconductor device |
| JP6696244B2 (en) * | 2016-03-16 | 2020-05-20 | 住友電気工業株式会社 | High electron mobility transistor and method of manufacturing high electron mobility transistor |
| US10833480B2 (en) * | 2018-07-03 | 2020-11-10 | Skorpios Technologies, Inc. | Diffusion blocking layer for a compound semiconductor structure |
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| US21050A (en) * | 1858-07-27 | Thaddeus hyatt | ||
| US34079A (en) * | 1862-01-07 | Improvement in telegraphing by colors | ||
| US35507A (en) * | 1862-06-10 | Geoege f | ||
| US3164801A (en) * | 1962-03-19 | 1965-01-05 | Thomas H Nicholl | Aerial delivery wind and location signal device |
| US3431569A (en) * | 1967-03-14 | 1969-03-11 | Us Navy | Day-night water marker |
| US4475476A (en) * | 1981-08-10 | 1984-10-09 | Howard Thomas L | Signal staff for a person in the water |
| JPH01194379A (en) | 1988-01-29 | 1989-08-04 | Toshiba Corp | Visible light emitting device |
| JP2945546B2 (en) | 1991-09-20 | 1999-09-06 | 富士通株式会社 | Stripe laser diode and method of manufacturing the same |
| US5421287A (en) * | 1993-11-17 | 1995-06-06 | Yonover; Robert N. | Visual locating device for persons lost at sea or the like |
| JP3598591B2 (en) | 1995-07-17 | 2004-12-08 | 住友化学工業株式会社 | Method for manufacturing group 3-5 compound semiconductor |
| JP2001024278A (en) | 2000-01-01 | 2001-01-26 | Sharp Corp | Method for growing semiconductor thin film and fabrication of semiconductor laser device |
| JP4528489B2 (en) * | 2003-01-27 | 2010-08-18 | 独立行政法人理化学研究所 | Ultraviolet light emitting device using p-type semiconductor |
| US20040227151A1 (en) * | 2003-03-31 | 2004-11-18 | Hitachi Cable, Ltd. | Light emitting diode |
| JP3915750B2 (en) | 2003-07-10 | 2007-05-16 | 日立電線株式会社 | Vapor phase growth method of compound semiconductor |
-
2006
- 2006-07-11 JP JP2006190274A patent/JP2008021717A/en not_active Withdrawn
-
2007
- 2007-07-09 US US11/822,604 patent/US7556977B2/en not_active Expired - Fee Related
- 2007-07-11 CN CNB2007101821532A patent/CN100511590C/en not_active Expired - Fee Related
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102782808A (en) * | 2009-12-10 | 2012-11-14 | 同和电子科技有限公司 | P-type AlGaN layer, method for producing same and group III nitride semiconductor light-emitting element |
| CN102782808B (en) * | 2009-12-10 | 2016-01-20 | 同和电子科技有限公司 | P-type AlGaN layer and manufacture method thereof and III group-III nitride semiconductor light-emitting component |
| CN102971871A (en) * | 2010-07-06 | 2013-03-13 | 昭和电工株式会社 | Epitaxial wafer for light-emitting diodes |
| TWI484661B (en) * | 2010-07-06 | 2015-05-11 | Showa Denko Kk | Epitaxial wafer for light emitting diode |
| WO2014088030A1 (en) * | 2012-12-04 | 2014-06-12 | 住友電気工業株式会社 | Nitride semiconductor light-emitting element and method for manufacturing nitride semiconductor light-emitting element |
Also Published As
| Publication number | Publication date |
|---|---|
| US20080014671A1 (en) | 2008-01-17 |
| US7556977B2 (en) | 2009-07-07 |
| CN100511590C (en) | 2009-07-08 |
| JP2008021717A (en) | 2008-01-31 |
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