CN101134286A - Combined chemistry mechanical grinding method and manufacturing method of the fleet plough groove isolation structure - Google Patents
Combined chemistry mechanical grinding method and manufacturing method of the fleet plough groove isolation structure Download PDFInfo
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- CN101134286A CN101134286A CNA2006101280096A CN200610128009A CN101134286A CN 101134286 A CN101134286 A CN 101134286A CN A2006101280096 A CNA2006101280096 A CN A2006101280096A CN 200610128009 A CN200610128009 A CN 200610128009A CN 101134286 A CN101134286 A CN 101134286A
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- grinding
- lapping liquid
- isolation structure
- fleet plough
- groove isolation
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Abstract
The complex chemical and mechanical grinding process includes one main grinding step in the first grinding speed and in the presence of grinding fluid; and one auxiliary grinding step including the first grinding period in the presence of grinding fluid and the second grinding period with solvent added and in the second grinding speed lower than the first grinding speed.
Description
Technical field
The present invention relates to the preparation method of a kind of chemical mechanical milling method and semiconductor structure, and particularly relates to the manufacture method of a kind of combined chemistry mechanical grinding method and fleet plough groove isolation structure.
Background technology
In semiconductor technology, along with component size continues reduction, photolithographic exposure resolution ratio also increases relatively, and is accompanied by the reduction of the exposure depth of field, and is more harsh for the requirement of the height fluctuating quantity of wafer surface.Therefore, how to keep good flatness in manufacturing process be an important problem to chip.
At present, the planarization of wafer (Planarization) technology all is that the dependence cmp (chemicalmechanical polishing, CMP) finish by technology.For chemical mechanical milling tech, generally speaking particularly traditional silica-based (silica based) shallow groove isolation layer cmp (STI-CMP) technology, have advantages such as low cost, high grinding rate and high planarization efficiency.
But, in the shallow groove isolation layer chemical mechanical milling tech, still have some shortcomings.For instance, in the shallow groove isolation layer chemical mechanical milling tech, having oxide can't improve the selection ratio of nitride (oxide tonitride) and produce and grind not enough (under polishing), or the problem of overmastication (over polishing), overmastication then can cause dishization (dishing) phenomenon.And, existing generation for fear of this problem, even (reserve mask is RM) with auxiliary process need to use the reserve photomask.Yet adopting this method but to have must increase by one photoengraving carving technology to form anti-phase photomask, the problem that makes the increase of process complications and cost.In addition, shallow groove isolation layer chemical mechanical milling tech also regular meeting has shallow trench thickness of oxide layer and the neither manageable problem of the uniformity, and influences the reliability of technology.
Summary of the invention
In view of this, purpose of the present invention is exactly in that a kind of combined chemistry mechanical grinding method is provided, and can avoid grinding the problem of deficiency or overmastication, and can improve the uniformity of chip surface and the reliability of technology.
Another object of the present invention provides a kind of manufacture method of fleet plough groove isolation structure, can avoid producing the dish phenomenon, improves the flatness of fleet plough groove isolation structure and the reliability of technology.
The present invention proposes a kind of combined chemistry mechanical grinding method, is suitable for making a structure planarization, and the combined chemistry mechanical grinding method with one first grinding rate, is carried out main (main polishing) step of grinding for a lapping liquid (slurry) is provided earlier.Then, carry out an assisted milling (assisted polishing) step, so that the structure planarization.Wherein, the assisted milling step is earlier in a very first time, and lapping liquid is provided, and then again in one second time, add a solvent, and grind with one second grinding rate, and second grinding rate is less than first grinding rate.
According to the described combined chemistry mechanical grinding method of embodiments of the invention, above-mentioned solvent comprise deionized water (deionized water, DIW).
According to the described combined chemistry mechanical grinding method of embodiments of the invention, the above-mentioned very first time is between 0 to 20 second.
According to the described combined chemistry mechanical grinding method of embodiments of the invention, the second above-mentioned time is between 2 to 20 seconds.
According to the described combined chemistry mechanical grinding method of embodiments of the invention, above-mentioned lapping liquid for example be the high selectivity lapping liquid (high selectivity slurry, HSS).In addition, above-mentioned lapping liquid for example is oxidation-containing cerium (cerium oxide, CeO
2) solution.
The present invention proposes a kind of manufacture method of fleet plough groove isolation structure in addition, and a substrate is provided earlier, has been formed with a mask layer of patterning in the substrate, and has been formed with at least one groove in substrate, and mask layer exposes groove.Then, forming a dielectric layer in the substrate top inserts in the groove.Then, carry out a main grinding steps, remove the part dielectric layer.Afterwards, carry out an assisted milling step, remove part dielectric layer and part mask layer.The assisted milling step is earlier in a very first time, and a lapping liquid is provided, and then again in one second time, add a solvent, and grind with a grinding rate, and its grinding rate is less than the grinding rate of main grinding steps.Continue it, remove mask layer.
According to the manufacture method of the described fleet plough groove isolation structure of embodiments of the invention, above-mentioned solvent comprises deionized water.
According to the manufacture method of the described fleet plough groove isolation structure of embodiments of the invention, the above-mentioned very first time is between 0 to 20 second.
According to the manufacture method of the described fleet plough groove isolation structure of embodiments of the invention, the second above-mentioned time is between 2 to 20 seconds.
According to the manufacture method of the described fleet plough groove isolation structure of embodiments of the invention, above-mentioned lapping liquid for example is the high selectivity lapping liquid.In addition, above-mentioned lapping liquid for example is the solution of oxidation-containing cerium.
In combined chemistry mechanical grinding method of the present invention, chemical mechanical milling tech is divided into main grinding steps and assisted milling step, and the grinding rate of assisted milling step is less than the grinding rate of main grinding steps, therefore do not have existing problem, and influence the reliability of technology because of overmastication.In addition, utilize the manufacture method of the fleet plough groove isolation structure of combined chemistry mechanical grinding method, except can guaranteeing that the polished material of desire can be ground totally fully, do not have the dish phenomenon, and can improve the flatness of chip surface.
For above and other objects of the present invention, feature and advantage can be become apparent, following conjunction with figs. and preferred embodiment are to illustrate in greater detail the present invention.
Description of drawings
Fig. 1 is the flow chart of steps according to the combined chemistry mechanical grinding method that the embodiment of the invention illustrated.
Fig. 2 A to Fig. 2 G is the manufacturing process profile according to the fleet plough groove isolation structure that the embodiment of the invention illustrated.
The simple symbol explanation
100,102,104,11O: step
210: substrate
202: pad oxide
204,204a: mask layer
206: opening
208: groove
210,210a: dielectric layer
210b: fleet plough groove isolation structure
The specific embodiment
Fig. 1 is the flow chart of steps according to the combined chemistry mechanical grinding method that the embodiment of the invention illustrated.
Please refer to Fig. 1, at first carry out main (main polishing) step (step 100) of grinding.Main grinding steps is for a lapping liquid (slurry) is provided, with a grinding rate (V
1) carry out it.Wherein, lapping liquid can for example be to use the high selectivity lapping liquid (high selectivity slurry, HSS), it for example is oxidation-containing cerium (cerium oxide, CeO
2) solution.
Above-mentioned main grinding steps is identical with general chemical mechanical milling tech, purpose is in the short time the polished material of most desire to be got rid of, it is for providing high grinding rate, in case be ground to the boundary that exposes different materials, then main grinding steps will stop, and is residual but still have the polished material of part desire this moment.
Please continue with reference to Fig. 1,, carry out an assisted milling (assisted polishing) step (step 110) again in carrying out main grinding steps (step 100) afterwards.The assisted milling step is earlier at a time (T
1) in, lapping liquid (step 102) is provided, do not grind this moment.Then, again in a time (T
2) in, add a solvent, and with a grinding rate (V
2) grind.
Wherein, the time (T that lapping liquid is provided of step 102
1) for example be between 0 to 20 second, and lapping liquid can be identical with employed lapping liquid in the main grinding steps, and the lapping liquid of step 102 for example is to use the high selectivity lapping liquid, and it for example is oxidation-containing cerium (cerium oxide, CeO
2) solution.In addition, the time (T of the adding solvent of step 104
2) for example be between 2 to 20 seconds, and solvent for example be to use deionized water (deionized water, DIW).And, the grinding rate (V of assisted milling step
2) less than the grinding rate (V of main grinding steps
1)
It should be noted that; have now after main grinding steps stops; if will start the chemical mechanical grinder device once more when grinding; because of being utilizes the parameter identical with main grinding steps to grind; so it can be to carry out it with high grinding rate; and therefore regular meeting causes the problem of overmastication, and then makes the generation depression of chip surface, influences the reliability of technology.Yet assisted milling step of the present invention is not grind when lapping liquid is provided, and after then adding solvent, just carry out abrasive action, therefore its grinding rate can be slower than the grinding rate of main grinding steps, thus do not have because of overmastication, and cause the problem of dishization (dishing) phenomenon.On the other hand, above-mentioned assisted milling step also can be applicable to the do over again technology of (rework) of cmp, so that increase the flatness of chip.Generally speaking, combined chemistry mechanical grinding method of the present invention except can guaranteeing that the polished material of desire can be ground totally fully, also can be avoided existing because of overmastication, and cause the dish phenomenon, influences the reliability of technology.
Below, will combined chemistry mechanical grinding method of the present invention be described for embodiment.In the following description, be that manufacture method with fleet plough groove isolation structure (STI) is as embodiments of the invention, yet combined chemistry mechanical grinding method of the present invention is not limited among this embodiment, also can be applicable in other semiconductor technology that needs chemical mechanical milling tech.
Fig. 2 A to Fig. 2 G is the manufacturing process profile according to the fleet plough groove isolation structure that the embodiment of the invention illustrated.
At first, please refer to Fig. 2 A, a substrate 200 is provided, substrate 200 for example is a silicon base.Afterwards, in substrate 200, form one deck pad oxide 202 and one deck mask layer 204.Wherein, the material of pad oxide 202 for example is a silica, and its formation method for example is a thermal oxidation method.In addition, the material of mask layer 204 for example is a silicon nitride, and its formation method for example is a chemical vapour deposition technique.
Then, please refer to Fig. 2 B, in mask layer 204 and pad oxide 202, form an opening 206.Wherein, the formation method of opening 206 for example is the photoresist layer (not illustrating) that forms patterning on mask layer 204, and the photoresist layer with patterning is a mask then, and etching part mask layer 204 and pad oxide 202 are to exposing substrate 200 bottoms.
Subsequently, please refer to Fig. 2 C, is mask with mask layer 204, removes part substrate 200, to form a groove 208 in substrate 200.Wherein, the method that removes part substrate 200 for example is to carry out an etch process.
Continue it, please refer to Fig. 2 D, form one dielectric layer 210 in substrate 200 tops, to insert in the groove 208.Wherein, the material of dielectric layer 210 for example is a silica, and its formation method for example is chemical vapour deposition technique (CVD).
Afterwards, please refer to Fig. 2 E, carry out a main grinding steps, removing part dielectric layer 210, and the thickness of the default dielectric layer 210 that removes is relevant with process margin, need not do special restriction.Above-mentioned main grinding steps is identical with general chemical mechanical milling tech, and it provides a lapping liquid, carries out it with a grinding rate.Wherein, lapping liquid can for example be to use the high selectivity lapping liquid, and it for example is the solution of oxidation-containing cerium.
Then, please refer to Fig. 2 F, after main grinding steps, carry out an assisted milling step again, to remove part dielectric layer 210a and part mask layer 204.The assisted milling step is earlier at a time (T
1) in, lapping liquid is provided, do not grind this moment.Then, again in a time (T
2) in, add a solvent, and grind with a grinding rate.Wherein, above-mentioned lapping liquid can be identical with employed lapping liquid in the main grinding steps, for example is to use the high selectivity lapping liquid, and it for example is the solution of oxidation-containing cerium.
Above-mentioned time (the T that lapping liquid is provided
1) for example be between 0 to 20 second, and add the time (T of solvent
2) for example be between 2 to 20 seconds.Wherein, above-mentioned time (T
1, T
2) distribution relevant with process margin, can be different and adjust according to process margin, need not do special restriction.
Afterwards, please refer to Fig. 2 G, remove mask layer 204a and pad oxide 202, to form fleet plough groove isolation structure 210b.The method that wherein removes mask layer 204a and pad oxide 202 for example is to carry out an isotropic etching.Because above-mentioned assisted milling step can remove the part mask layer material, therefore can guarantee not have the residual dielectric layer material on the mask layer 204a, so help the technology that removes of follow-up mask layer 204a.
In sum, the present invention has following several advantages at least:
1. combined chemistry mechanical grinding method of the present invention does not have existing problem because of overmastication, and influences the reliability of technology.
2. the manufacture method of fleet plough groove isolation structure of the present invention except can guaranteeing that the polished material of desire can be ground totally fully, does not also have the dish phenomenon, and can improve the flatness of chip surface and the reliability of technology.
3. combined chemistry mechanical grinding method of the present invention can be applicable in other semiconductor technology that needs chemical mechanical milling tech.In addition, assisted milling step of the present invention also can be applicable to the technology that cmp is done over again.
4. the employed solvent of assisted milling step of the present invention is a chemical solution common in the general technology, therefore can save the cost of technology.
Though the present invention discloses as above with preferred embodiment; yet it is not in order to limit the present invention; those skilled in the art can do a little change and retouching without departing from the spirit and scope of the present invention, thus protection scope of the present invention should with accompanying Claim the person of being defined be as the criterion.
Claims (12)
1. a combined chemistry mechanical grinding method is suitable for making the structure planarization, comprising:
Lapping liquid is provided,, carries out main grinding steps with first grinding rate; And
Carry out the assisted milling step, so that this structure planarization, wherein this assisted milling step comprises:
At first in the very first time, provide this lapping liquid; And
In second time, add solvent again, and grind with second grinding rate,
Wherein this second grinding rate is less than this first grinding rate.
2. combined chemistry mechanical grinding method as claimed in claim 1, wherein this solvent comprises deionized water.
3. combined chemistry mechanical grinding method as claimed in claim 1, wherein this very first time is between 0 to 20 second.
4. combined chemistry mechanical grinding method as claimed in claim 1, wherein this second time is between 2 to 20 seconds.
5. combined chemistry mechanical grinding method as claimed in claim 1, wherein this lapping liquid comprises the high selectivity lapping liquid.
6. combined chemistry mechanical grinding method as claimed in claim 1, wherein this lapping liquid comprises the solution of oxidation-containing cerium.
7. the manufacture method of a fleet plough groove isolation structure comprises:
Substrate is provided, has been formed with the mask layer of patterning in this substrate, and in this substrate, be formed with at least one groove, and this mask layer exposes this groove;
Forming dielectric layer in this substrate top inserts in this groove;
Carry out main grinding steps, remove this dielectric layer of part;
Carry out the assisted milling step, remove this dielectric layer of part and this mask layer of part, this assisted milling step wherein comprises:
At first in the very first time, provide lapping liquid; And
In second time, add solvent again, and grind, and this grinding rate is less than the grinding rate of this main grinding steps with grinding rate; And
Remove this mask layer.
8. the manufacture method of fleet plough groove isolation structure as claimed in claim 7, wherein this solvent comprises deionized water.
9. the manufacture method of fleet plough groove isolation structure as claimed in claim 7, wherein this very first time is between 0 to 20 second.
10. the manufacture method of fleet plough groove isolation structure as claimed in claim 7, wherein this second time is between 2 to 20 seconds.
11. the manufacture method of fleet plough groove isolation structure as claimed in claim 7, wherein this lapping liquid comprises the high selectivity lapping liquid.
12. the manufacture method of fleet plough groove isolation structure as claimed in claim 7, wherein this lapping liquid comprises the solution of oxidation-containing cerium.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA2006101280096A CN101134286A (en) | 2006-08-31 | 2006-08-31 | Combined chemistry mechanical grinding method and manufacturing method of the fleet plough groove isolation structure |
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|---|---|---|---|
| CNA2006101280096A CN101134286A (en) | 2006-08-31 | 2006-08-31 | Combined chemistry mechanical grinding method and manufacturing method of the fleet plough groove isolation structure |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107894359A (en) * | 2017-12-13 | 2018-04-10 | 武汉电信器件有限公司 | Chip of laser failure positioning analysis sample preparation methods and middleware |
| CN114121647A (en) * | 2022-01-24 | 2022-03-01 | 澳芯集成电路技术(广东)有限公司 | Method for improving chemical mechanical polishing efficiency |
-
2006
- 2006-08-31 CN CNA2006101280096A patent/CN101134286A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107894359A (en) * | 2017-12-13 | 2018-04-10 | 武汉电信器件有限公司 | Chip of laser failure positioning analysis sample preparation methods and middleware |
| CN114121647A (en) * | 2022-01-24 | 2022-03-01 | 澳芯集成电路技术(广东)有限公司 | Method for improving chemical mechanical polishing efficiency |
| CN114121647B (en) * | 2022-01-24 | 2022-04-22 | 澳芯集成电路技术(广东)有限公司 | Method for improving chemical mechanical polishing efficiency |
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