CN101132896A - Method for manufacturing silicon block and silicon slice - Google Patents
Method for manufacturing silicon block and silicon slice Download PDFInfo
- Publication number
- CN101132896A CN101132896A CNA2005800488669A CN200580048866A CN101132896A CN 101132896 A CN101132896 A CN 101132896A CN A2005800488669 A CNA2005800488669 A CN A2005800488669A CN 200580048866 A CN200580048866 A CN 200580048866A CN 101132896 A CN101132896 A CN 101132896A
- Authority
- CN
- China
- Prior art keywords
- slurries
- silicon
- silico briquette
- silicon chip
- cutting
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Images
Landscapes
- Mechanical Treatment Of Semiconductor (AREA)
Abstract
The purpose is to provide a silicon block which can be processed into a thin silicon wafer having reduced breakage of a substrate during the manufacture of a solar battery. A method for producing a silicon block by cutting a silicon ingot using a silicon ingot cutting slurry containing abrasive grains and a basic substance, the basic substance being contained in a content of at least 3.5% by mass relative to the total mass of the liquid components of the slurry, the slurry containing an organic amine at a ratio of 0.5 to 5.0 inclusive by mass relative to the mass of the moisture in the liquid components of the slurry, and the slurry having a pH of 12 or higher and being used at a temperature within the range from 65 to 95 DEG C.
Description
Technical field
The present invention relates to make the silico briquette manufacture method of silico briquette and use the silico briquette that manufactures by this manufacture method to make the silicon chip manufacture method of silicon chip by the polycrystal silicon ingot that is used to make solar energy battery adopted silicon chip.
Background technology
Making the employed polysilicon chip of solar cell makes in the following way: make the polycrystal silicon ingot of quadrangular type, use band saw etc. to cut out the polysilicon block of a plurality of quadrangular types by this polycrystal silicon ingot, and then this polysilicon block is cut into quadrangular plate.
When cutting out silico briquette by silicon ingot, if use band saw, cause damage then for sometimes the piece surface, do not make silicon chip if do not remove the processing of this damaged portion, then in step thereafter, crack, exist the yield rate of product to reduce such problem.Therefore, carry out mechanical lapping (for example, with reference to patent documentation 1) to the side of silico briquette.
Patent documentation 1: TOHKEMY 2004-6997 communique
At first, when cutting out silico briquette,, and use alkaline slurry for the surface damage that will produce suppresses to be Min. in the past by silicon ingot.Secondly, shown in background technology, even mechanical lapping is carried out so that the surface roughness after grinding is below the 8 μ m in the side of silico briquette, when having used the solar cell of silicon chip, making still substrate damage can take place, and yield rate occurs and reduce such phenomenon sometimes.
Summary of the invention
The objective of the invention is to: provide the relation of a kind of state of studying silicon chip and crackle to improve the manufacture method of the silico briquette and the silicon chip of yield rate.
The manufacture method of silico briquette of the present invention is to use the silicon ingot that contains abrasive particle and alkaline matter to cut the method for cutting silicon ingot with slurries, and the content of above-mentioned alkaline matter is at least 3.5 quality % with respect to the quality of the liquid component integral body of above-mentioned slurries; It is organic amine more than 0.5, below 5.0 that above-mentioned slurries contain mass ratio with respect to the moisture in the liquid component of above-mentioned slurries; The pH value of above-mentioned slurries is more than 12; Using described slurries more than 65 ℃, below 95 ℃.
In addition, silico briquette of the present invention is no matter how the operating position of above-mentioned alkaline slurry is all cut out and cut into the silico briquette of many pieces of silicon chips of specific thickness by silicon ingot, and the surface roughness of the side of the above-mentioned silico briquette suitable with the end face of the above-mentioned silicon chip of the thickness 280 μ m that cut out is less than 3 μ m.
In addition, the surface roughness of the side of the above-mentioned silico briquette suitable with the end face of the above-mentioned silicon chip of the thickness 240 μ m that cut out is below the 1 μ m.
Silico briquette of the present invention is at least 3.5 quality % with the quality that the content of alkaline matter is taken as with respect to the liquid component integral body of slurries, making it contain mass ratio with respect to the moisture in the liquid component of slurries is 0.5～5.0 organic amine, and the pH value of slurries is taken as more than 12, thus, the surface roughness of the cut surface of the silico briquette that is cut out by silicon ingot is attenuated.
In addition, no matter the operating position of this alkaline slurry how, all cut by silicon ingot, the surface roughness of the side of the above-mentioned silico briquette that the end face of the above-mentioned silicon chip of the thickness 240 μ m that make and cut out is suitable is below the 1 μ m, and, the surface roughness of the side of the above-mentioned silico briquette suitable with the end face of the above-mentioned silicon chip of the thickness 280 μ m that cut out is less than 3 μ m, and therefore when making solar cell, the damage of substrate is few equally when making solar cell with the silicon chip that cuts into thickness 330 μ m.
Description of drawings
Fig. 1 is the figure that expression cuts into silicon ingot the situation of silico briquette.
Fig. 2 is the figure that expression cuts into silico briquette the situation of silicon chip.
Fig. 3 is the figure of the relation of the surface roughness of side of expression silico briquette and improvement rate.
The specific embodiment
Fig. 1 is the figure that represents in the present invention silicon ingot to be cut into the situation of silico briquette.Fig. 2 is the figure that represents in the present invention silico briquette to be cut into the situation of silicon chip.
The present invention relates to the characteristic of the semiconductor piece relevant with the semiconductor chip of making polysilicon, the semiconductor chip of above-mentioned polysilicon is used to make solar cell.And as semiconductor, though extensively adopt silicon generally speaking, GaAs alloy, germanium, silicon carbide alloys etc. also can be suitable for the present invention.
In addition, in the following description, be that example describes with the polysilicon.
As shown in Figure 1, on one side make polysilicon block 2 by cutting polycrystal silicon ingot 4 to the cutting of cutter sweep supply silicon ingot with slurries on one side.And, by being cut into desirable section configuration, polycrystal silicon ingot 4 makes polysilicon block 2.Be generally four prism type.And, make polycrystal silicon ingot 4 by using casting that the polysilicon powder is cast as four prism type.
Silicon ingot cutting of the present invention contains abrasive particle and alkaline matter with slurries.And the content of alkaline matter is at least 3.5 quality % with respect to the quality of the liquid component integral body of slurries, also contain mass ratio with respect to the moisture in the liquid component of slurries and be the organic amine more than 0.5, below 5.0, and the pH value of slurries is more than 12.
In addition, as abrasive particle,, for example can enumerate carborundum, cerium oxide, diamond, boron nitride, aluminium oxide, zirconia, silica so long as the material that uses as grinding-material gets final product generally speaking, to above-mentioned these materials, can two or morely alone or in combination use.The compound that can be used for such abrasive particle is on sale on market, specifically, as carborundum, can enumerate trade name GC (Green Silicon Carbide) and C (Black Silicon Carbide) ((strain) Off ジ ミ イ Application コ-Port レ-テ Star De society system), as aluminium oxide, can enumerate trade name FO (Fujimi Optical Emery), A (Regular Fused Alumina), WA (White FusedAlimina) and PWA (Platelet Calcined Alimina) ((strain) Off ジ ミ イ Application コ-Port レ-テ Star De society system) etc.
Though the average grain diameter of abrasive particle does not limit especially, preferably 1 μ m～60 μ m, more preferably 5 μ m～20 μ m.If the average grain diameter of abrasive particle is less than 1 μ m, then cutting speed is significantly slack-off, and is impracticable; If the average grain diameter of abrasive particle surpasses 60 μ m, then the surface roughness of the side of the silico briquette 2 after the cutting becomes big, so also undesirable.
In addition, though the qualification especially of the content of abrasive particle, with respect to the quality of silicon ingot cutting with slurries integral body, preferably 20 quality %～60 quality %.If the content of abrasive particle is less than 20 quality %, then cutting speed is slack-off, lacks practicality; If the content of abrasive particle surpasses 60 quality %, then the viscosity of slurries is excessive, is difficult to slurries are imported the cutting interface.
In the present invention,,, for example, metal hydroxides can be enumerated in slurries, more particularly, alkali metal hydroxides such as lithium hydroxide, NaOH, potassium hydroxide can be enumerated so long as the material that plays a role as alkali gets final product as alkaline matter; And alkaline earth metal hydroxide such as magnesium hydroxide, calcium hydroxide, barium hydroxide.And, to above-mentioned these materials, can two or morely alone or in combination use.In above-mentioned these materials, from reactive viewpoint of silicon ingot 4, preferably alkali metal hydroxide.
The content of alkaline matter is at least 3.5 quality % with respect to silicon ingot cutting with the quality of the liquid component integral body of slurries, preferably is at least 4.0 quality %, and preferably below the 30 quality %, more preferably below the 20 quality %.When the content of alkaline matter was very few, the cutting resistance did not fully reduce; When the content of alkaline matter was too much, the pH value of slurries was saturated, and again cutting resistances that add can not reduce more yet, cause waste to increase on the cost, thereby are unfavorable yet.
Silicon ingot cutting of the present invention also contains organic amine with slurries except alkaline matter.In the present invention, the such tackifier of organic amine and mucopolysaccharide or polyvinyl alcohol in the past are different, the material that the viscosity of slurries changes when suppressing cutting processing in the chemical action that improves slurries and playing a role.As such organic amine, can use well-known organic amine without restriction, for example, can enumerate alcamines, aliphatic amine, ester ring type amine, aromatic amines such as monoethanolamine, diethanol amine, triethanolamine.And, to above-mentioned these organic amines, can two or morely alone or in combination use.In above-mentioned these organic amines, from the viewpoint of cost and operability, preferably alcamines, more preferably triethanolamine.
The content of the organic amine in the slurries is more than 0.5, below 5.0 with respect to the mass ratio of the moisture in the liquid component of slurries, preferably more than 1.0, below 4.0.When with respect to the moisture in the liquid component of slurries, the mass ratio of organic amine was less than 0.5 o'clock, and the viscosity of slurries changes in the time of not only can not fully suppressing cutting processing, and the initial viscosity step-down of slurries, so be unfavorable.In addition, because organic amine does not have alkalescence strong as alkaline matter, so when with respect to the moisture in the liquid component of slurries, the mass ratio of organic amine is 5.0 when following, because a kind of cushioning effect causes the pH value of slurries that big variation does not take place.But when with respect to the moisture in the liquid component of slurries, the mass ratio of organic amine surpasses at 5.0 o'clock, and the chemical action dull of slurries causes the decline of cutting speed, so be unfavorable.
In addition, though silicon ingot of the present invention cutting is used rotation viscometer (for example, Block Le Star Network Off イ-Le De society system, プ ロ グ ラ マ Block Le レ オ メ- DV-III), at 90 ℃, shear rate 57.6[s with the qualification especially of initial viscosity of slurries
-1] time, 50～120mPas preferably.If the silicon ingot cutting is low excessively with the initial viscosity of slurries, the slurries that then are coated on the steel wire often are easy to drippage; If initial viscosity is too high, then to the slurries quantity delivered deficiency of silicon ingot cutting part.In addition, though the slurry viscosity in the cutting processing does not limit especially, use rotation viscometer (for example, Block Le Star Network Off イ-Le De society system, プ ロ グ ラ マ Block Le レ オ メ- DV-III), at 90 ℃, shear rate 57.6[s
-1] time, preferably below the 160mPas, more preferably below the 120mPas.If the slurry viscosity in the cutting processing is too high, then hinder the even dispersion of slurries in the silicon ingot cutting part, often cause cutting speed to reduce or the steel wire fracture.
In the present invention, as the liquid component of slurries, can make water, well-known cooling agent and their mixture.As water as used herein, the few water of impurity content preferably, but do not limit especially.Specifically, can enumerate pure water, ultra-pure water, urban water, water for industrial use etc.Though the content of water does not limit especially, with respect to the quality of silicon ingot cutting with slurries integral body, preferably 10 quality %～40 quality %.
In addition, as cooling agent, the general auxiliary mixed liquor such as the cutting that comprises polyethylene glycol, BTA, oleic acid etc. that uses gets final product.Such cooling agent is on sale on market, specifically, can enumerate trade name マ Le チ リ カ ノ-Le (society of physics and chemistry chamber of commerce system), Le Na Network-ラ Application ト (pansophy chemistry industry society system) etc.Though the content of cooling agent does not limit especially, with respect to the quality of silicon ingot cutting with slurries integral body, preferably 10 quality %～40 quality %.
Silicon ingot cutting of the present invention has strong basicity with slurries because of alkaline matter.Therefore, silicon ingot cuts the interface because of the reaction embrittlement shown in the following formula (1), and is ground by abrasive particle.
Si+4H
2O→Si(OH)
4+2H
2 (1)
And by following formula as can be known, the pH value of slurries high more (being strong basicity) can promote the reaction of silicon more.Therefore, silicon ingot of the present invention cutting has pH value more than 12 with slurries, preferably has the pH value more than 13.When the pH of slurries value was low excessively, the reaction of silicon (embrittlement) speed reduced, and can not improve cutting speed, was unfavorable therefore.
In addition, silicon ingot cutting of the present invention is being used more than 65 ℃, below 95 ℃ with slurries.When the temperature of using slurries during less than 65 ℃, reaction is not activated, so fully do not reduce the cutting resistance, when the temperature of using slurries surpasses 95 ℃, because the evaporation of the liquid component (mainly being moisture) in the slurries, cause reacting needed water deficient, the cutting resistance increases, so be unfavorable.
With in the slurries,, can add various well-known additives in silicon ingot of the present invention cutting according to the kind of purpose of seeking to keep product quality and stable performance and silicon ingot 4, processing conditions etc.As such additive, for example, can enumerate such abrasive particle disperse additive of NMF, lubricant, antirust agent, disodium edta such chelating agent, bentonite etc.
Silicon ingot cutting of the present invention can be by mixing above-mentioned each modulation that becomes to assign to slurries with desirable ratio.The method of mixing each composition is arbitrarily, for example, can be undertaken by using wing formula mixer to stir.In addition, the order by merging of each composition also is arbitrarily.Moreover, according to the refining purpose that waits, can further handle with slurries the silicon ingot cutting of being modulated, for example carry out filtration treatment, ion-exchange treatment etc.
In the cutting method of silicon ingot 4 of the present invention, use cutter sweep.As at this employed cutter sweep, can use cutter sweep arbitrarily, for example can enumerate band saw, fret saw, many band saws, many fret saws, cylindrical cutter sweep and interior round cutter sweep.In these devices, particularly cutting diameter greatly, during silicon ingot more than for example 50cm, fret saw preferably.Its reason is, compares with other cutter sweep, can cut silicon ingot with less cutting expense.
As shown in Figure 2, utilize steel wire 3 that polysilicon block 2 is cut into desirable thickness and make polysilicon chip 1.It generally is quadrangular plate.
At this, the opinion scale of surface roughness of the side of silico briquette 2 is described.In addition, as surface roughness, use maximum height Ry.And maximum height Ry is to use Tokyo accurate system SURFCOM480M, determines under the condition of contact pilotage footpath 5 μ m (90 ℃ of circular cones), evaluation length 2mm, finding speed 0.6mm, the value of cutting 0.25mm.In addition, the side of the object of silico briquette 2 is as the end face that cuts resulting silicon chip 1 and remaining side.For example, if quadrangular then is 4 sides; If cylinder then is a lateral circle surface.
Spoilage Y is the ratio of being cut the silicon chip 1 that damages when resulting silicon chip 1 is made solar cell by 1 silico briquette 2 using.
And, with spoilage minimum, be that thickness t that the silico briquette 2 of 0.8 μ m is cut out is that the silicon chip 1 of the 330 μ m spoilage Y (0.8,330) when making solar cell is taken as 0 using surface roughness Ry by the side.In addition, with spoilage the highest, be that thickness t that the silico briquette 2 of 3.5 μ m is cut out is that the silicon chip 1 of the 240 μ m spoilage Y (3.5,240) when making solar cell is taken as 1 using surface roughness Ry by the side.
And, the substrate damage improvement rate I when making solar cell, (Ry t) is taken as relative value between above-mentioned 1 and 0, and is obtained by following formula (2) the spoilage A in the time of can being variable with the thickness t that makes the surface roughness Ry of side of silico briquette 2 and silicon chip 1.
I＝{A(3.5，240)-A(Ry，t)}/{A(3.5，240)-A(0.8，330)}
(2)
In order to study state under above such experiment condition, silicon chip and the relation between the crackle and experimentize, study the generation frequency of crackle in the step afterwards.In addition, the generation frequency of crackle being replaced into aforesaid substrate damages the improvement rate and shows.
In this experiment, at first, the surface roughness Ry for preparing the side is respectively these 6 kinds of silico briquettes 2 of 0.8,0.9,2.6,3.0,3.5 and 4.3 μ m.Then, cut out the silicon chip 1 of 330 μ m, 280 μ m, 240 these 3 kinds of thickness of μ m respectively by these silico briquettes 2.And, use by the resulting silicon chip 1 of each silico briquette 2 cuttings and make solar cell, and obtain substrate damage improvement rate according to the spoilage of this moment, be illustrated as Fig. 3.
As shown in Figure 3, the substrate damage improvement rate the when thickness of the silicon chip 1 that cuts out is 330 μ m exists in the tendency that regional standard deviation that surface roughness surpasses 3 μ m increases slightly, even but surpass 80%, also think in practicality, not have problems.Therefore, when the thickness of silicon chip 1 is 330um,, just we can say that substrate damage improvement rate is not subjected to the influence of surface roughness as long as the surface roughness of the side of silico briquette 2 is at least below the 5 μ m.
But the surface roughness of the substrate damage improvement rate the when thickness of the silicon chip 1 that cuts out is 280 μ m in the side of silico briquette 2 takes place sharply to change between 2.6 μ m～3 μ m.By surface roughness is that the substrate damage improvement rate of the silicon chip 1 that cuts out of the silico briquette 2 more than the 3 μ m reaches 40～50%, and till the instrumentation upper limit 4.3 μ m in this experiment, it is steady that its value almost becomes.On the other hand, by surface roughness is that the substrate damage improvement rate of the silicon chip 1 that cuts out of the silico briquette 2 below the 2.6 μ m reaches about 90%, till the instrumentation lower limit 0.8 μ m in this experiment, its value almost becomes constant, and the standard deviation of substrate damage improvement rate is in ± 5%.
And then, the thickness attenuation of the silicon chip 1 that will cut out by silico briquette 2, rapid variation like that when though the substrate damage improvement rate during 240 μ m does not have 280 μ m, but roughly surface roughness from the side begins rapid decline above the place of 2.3 μ m, after surpassing 3.5 μ m, be almost 0%, becoming steady till at least to 4.3 μ m more than the 3.5 μ m.On the other hand, if surface roughness less than 2.3 μ m, then substrate damage improvement rate begins to improve, and almost reaches 80% before and after 1 μ m, it is steady that its value almost becomes.
Like this, after the surface roughness of the side of thickness by changing silicon chip 1 and silico briquette 2 is studied both relations, learn thickness, the value difference of the surface roughness of the bigger variation of substrate damage improvement rate because of silicon chip 1.
For example, when cutting into the silicon chip 1 of thickness 280 μ m, the surface roughness of preparing the side is the following silico briquettes 2 of 2.6 μ m, when cutting into the silicon chip 1 of thickness 240 μ m, the surface roughness of preparing the side is the following silico briquette 2 of 1 μ m, under any circumstance, as silicon ingot cutting slurries, all preferably use following slurries: contain abrasive particle and alkaline matter, the content of this alkaline matter is at least 3.5 quality % with respect to the quality of the liquid component integral body of slurries, also contain mass ratio with respect to the moisture in the liquid component of slurries and be 0.5～5.0 organic amine, and the pH value of slurries is more than 12.
In addition, when the thickness of silicon chip 1 is 280 μ m, as mentioned above, the surface roughness of silico briquette 2 from about 3 μ m to about the 4.3 μ m, substrate damage improvement rate becomes steady 50%, if but further with the surface roughness overstriking, then such as everyone knows, crackle finished product raising rate graduates into 0% (substrate damage improvement rate is 0%).Therefore, point that the zone begins to take place bigger variation has a plurality of to cause substrate damage improvement rate to become stably from the thickness because of silicon chip 1, so when reducing the surface roughness of silico briquette 2 gradually, even found temporarily to become zone, the zone that yet might exist substrate damage improvement rate significantly to improve stably.
And then, because, be below the higher limit in the zone more than 80% so the surface roughness of the side of silico briquette 2 must be a substrate damage improvement rate sometimes also with the thickness attenuation of silicon chip 1.
In the manufacture method of such silico briquette, owing to use the slurries cutting silicon ingot 4 that contains abrasive particle and alkaline matter to make silico briquette 2,, therefore can reduce step so after cutting, need not carry out milled processed to the side separately, cheap silicon chip is provided.
Claims (3)
1. the silicon ingot cutting slurries that the manufacture method of a silico briquette, its use contain abrasive particle and alkaline matter cut silicon ingot and make silico briquette, it is characterized in that:
The content of described alkaline matter is at least 3.5 quality % with respect to the quality of the liquid component integral body of described slurries;
It is organic amine more than 0.5, below 5.0 that described slurries contain mass ratio with respect to the moisture in the liquid component of described slurries;
The pH value of described slurries is more than 12, and is using described slurries more than 65 ℃, below 95 ℃.
2. the manufacture method of a silicon chip, it is that silico briquette below the predefined value is made silicon chip by grinding to form surface roughness, it is characterized in that:
Described predefined value changes according to the thickness of described silicon chip.
3. the manufacture method of silicon chip according to claim 2 is characterized in that:
Surface roughness for no matter described surface roughness how to change in a plurality of zones that substrate damage improvement rate all almost shows steady state value, described substrate damage improvement rate is below the higher limit in the zone more than 80%.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA2005800488669A CN101132896A (en) | 2005-05-11 | 2005-05-11 | Method for manufacturing silicon block and silicon slice |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA2005800488669A CN101132896A (en) | 2005-05-11 | 2005-05-11 | Method for manufacturing silicon block and silicon slice |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 201010255701 Division CN101913209B (en) | 2005-05-11 | 2005-05-11 | Manufacture method of silicon chip |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN101132896A true CN101132896A (en) | 2008-02-27 |
Family
ID=39129795
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNA2005800488669A Pending CN101132896A (en) | 2005-05-11 | 2005-05-11 | Method for manufacturing silicon block and silicon slice |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN101132896A (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101872800B (en) * | 2009-04-24 | 2012-05-23 | 新日光能源科技股份有限公司 | Treatment method of semiconductor substrate |
| TWI456781B (en) * | 2012-05-04 | 2014-10-11 | Tsec Corp | Structure of solar cell and texturing method thereof |
| CN105592993A (en) * | 2013-09-30 | 2016-05-18 | 贝卡尔特公司 | Method to produce composite stone veneer product |
| CN110854238A (en) * | 2019-11-26 | 2020-02-28 | 常州时创能源科技有限公司 | Preparation method of monocrystalline silicon small cell |
| WO2021077804A1 (en) * | 2019-10-23 | 2021-04-29 | 常州时创能源股份有限公司 | Method for cutting edge leather material |
-
2005
- 2005-05-11 CN CNA2005800488669A patent/CN101132896A/en active Pending
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101872800B (en) * | 2009-04-24 | 2012-05-23 | 新日光能源科技股份有限公司 | Treatment method of semiconductor substrate |
| TWI456781B (en) * | 2012-05-04 | 2014-10-11 | Tsec Corp | Structure of solar cell and texturing method thereof |
| CN105592993A (en) * | 2013-09-30 | 2016-05-18 | 贝卡尔特公司 | Method to produce composite stone veneer product |
| WO2021077804A1 (en) * | 2019-10-23 | 2021-04-29 | 常州时创能源股份有限公司 | Method for cutting edge leather material |
| CN110854238A (en) * | 2019-11-26 | 2020-02-28 | 常州时创能源科技有限公司 | Preparation method of monocrystalline silicon small cell |
| CN110854238B (en) * | 2019-11-26 | 2022-04-26 | 常州时创能源股份有限公司 | Preparation method of monocrystalline silicon small cell |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP5079508B2 (en) | Silicon wafer manufacturing method | |
| CN101360592B (en) | Slurry for silicon ingot slicing and silicon ingot slicing method using the same | |
| US20060075687A1 (en) | Slurry for slicing silicon ingot and method for slicing silicon ingot using same | |
| CN107052988A (en) | Composition for polishing | |
| CN101132896A (en) | Method for manufacturing silicon block and silicon slice | |
| CN101528885A (en) | Aqueous fluid compositions for abrasive slurries, methods of production, and methods of use thereof | |
| CN102257092A (en) | Slurry composition containing non-ionic polymer and method for use | |
| WO2011007590A1 (en) | Water-soluble working fluid for fixed-abrasive wire saw | |
| CN102369268A (en) | Machining fluid for brittle material and machining fluid for hard material | |
| CN102027100A (en) | A cutting and lubricating composition for use with a wire cutting apparatus | |
| CN103732354A (en) | Method for producing ceramic composite for photoconversion | |
| KR101891189B1 (en) | Polishing tool and manufacturing method thereof and manufacturing method of polished article | |
| CN101913209B (en) | Manufacture method of silicon chip | |
| US4246003A (en) | Lap cutting abrasive | |
| JP2005088394A (en) | Slurry for cutting silicon ingot, and method for cutting silicon ingot by using it | |
| JP3508970B2 (en) | Aqueous dispersion medium composition of abrasive grains and method for cutting ingot using the cutting fluid | |
| ZA200506207B (en) | Cubic boron nitride, catalyst for synthesizing cubic boron nitride, and process for producing cubic boron nitride | |
| JP2008103690A (en) | Slurry used for cutting silicon ingot | |
| JP2002053882A (en) | Slurry composition for cutting brittle material and method for cutting using the same | |
| JP2005112917A (en) | Slurry for cutting silicon ingot and method for cutting silicon ingot therewith | |
| JPS61166893A (en) | Water-soluble cutting oil composition | |
| CN108007982A (en) | A kind of method of extension A- surface sapphire window polishing fluid service lifes | |
| JP2003055684A (en) | Powder composition for water-soluble processing fluid, water-soluble processing fluid using the same and processing slurry | |
| JP2003291070A (en) | Lapping wheel |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C02 | Deemed withdrawal of patent application after publication (patent law 2001) | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Open date: 20080227 |