CN101132053A - Organic luminous element - Google Patents
Organic luminous element Download PDFInfo
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- CN101132053A CN101132053A CNA2006101217001A CN200610121700A CN101132053A CN 101132053 A CN101132053 A CN 101132053A CN A2006101217001 A CNA2006101217001 A CN A2006101217001A CN 200610121700 A CN200610121700 A CN 200610121700A CN 101132053 A CN101132053 A CN 101132053A
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Abstract
This invention relates an organic light-emitting component. The production procedure is that: an electron injection layer containing alkaline-earth metal is placed between cathode and electron transmission layer; so that, brightness decay of light-emitting component can be reduced, and operation stability of the component can be increased.
Description
Technical field
The relevant a kind of organic illuminating element of the present invention is particularly relevant for a kind of organic electroluminescent element.
Background technology
(Organic Light-Emitting Device has implemented year on high-effect display OLED) to active matrix (active-matrix) framework in utilizing Organic Light Emitting Diode.Because remove the restrictive condition of the OLED fill factor, curve factor of the optical transparence of substrate and pixel, so adopt top emission (top-emitting) OLED structure to help active matrix OLED.On the other hand, the Organic Light Emitting Diode of inversion type (invertedOLED), its have a reflective negative electrode (reflective cathode) in the bottom and the semiconductor transparent anode in the top, and make that the reasonable utilization of n transistor npn npn on the image element circuit of active matrix OLED is feasible.
Yet the main challenge of inversion type top-emitting OLED is to prepare a reflective negative electrode that can provide effective electron to penetrate.Generally speaking, being prepared in of reflective negative electrode relates to the metal with low work function (low-work-function) of handling high reaction (highlyreactive) in the manufacture craft.A kind of depositional mode be with plated metal directly as cathode layer, yet the formation step that changes the contact pin can reduce the ability that electronics penetrates, moreover, the affair that do not sound feasible of the manufacture method of this kind display.It is that codeposition one reactive metal and organic electronic transferring material (organic electron-transport materials) are to form a n type doped layer that another kind is used for making mode that the electronics from bottom cathode penetrates.In addition, also waiting to solve aspect metal dopant diffusion and then the influence operation confidence level.
Summary of the invention
In order to address the above problem, one of the object of the invention provides a kind of organic illuminating element, adds the metal level of low work function between negative electrode and electron transfer layer, to improve efficiency of element and stable operation degree.
One of the object of the invention provides a kind of inversion type organic illuminating element, adds thin magnesium to improve the situation of element brightness decay between negative electrode and n type doped layer.
In order to achieve the above object, a kind of organic illuminating element of the present invention comprises: a substrate; One anode of one negative electrode and corresponding setting is arranged on this substrate; One hole transmission layer is between this negative electrode and this anode; One electron transfer layer is between this hole transmission layer and this negative electrode; And an electron injecting layer, between this negative electrode and this electron transfer layer, wherein the material of this electron injecting layer is an alkaline-earth metal.
Below by conjunction with figs. specific embodiments of the invention are illustrated in detail, when the effect that is easier to understand purpose of the present invention, technology contents, characteristics and is reached.
Description of drawings
Figure 1A is the generalized section of inversion type organic illuminating element according to a preferred embodiment of the present invention.
Figure 1B is the generalized section according to the organic illuminating element of another preferred embodiment of the present invention.
Fig. 2 A and Fig. 2 B are respectively does not have electron injecting layer and adds the curve chart of the element voltage of electron injecting layer to brightness, current density.
Fig. 3 is that above-mentioned two kinds of structures are in 100cd/m
2Initial brightness under, the situation of relative brightness decay.
Fig. 4 is that above-mentioned two kinds of structures are in 100cd/m
2Initial brightness under, the situation that increases of operating voltage.
Embodiment
Below be organic illuminating element of the present invention to be described with a preferred embodiment.
A material layer as used herein comprises the zone of a material, and its thickness is long and wide compared to it to be thin, for example thin plate (sheet), paper tinsel (foil), thin layer (film), lamination (laminations) or coating (coatings) or the like.Layer as used herein needs not be the plane, but can be crooked, bending or other profiles, for instance, at least a portion coats other parts.So-called herein layer also can comprise many sublayers (sub-layer), also can be the set of each separating part.
See also Figure 1A, be the generalized section of according to a preferred embodiment of the present invention inversion type organic illuminating element.As shown in FIG., an inversion type Organic Light Emitting Diode 10 comprises a ground 102 (substrate), a negative electrode 104 (cathode), an electron transfer layer 106 (electron-transport layer), a hole transmission layer 108 (hole-transport layer) and an anode 200 (anode).In an embodiment, ground 102 can be glass substrate, a plastic substrate or a flexible substrate.Its secondary cathode 104 is positioned on the ground 102, can be transparent, opaque (opaque) or reflexible individual layer or combining structure, for example an indium tin oxide (indium tin oxide, ITO), indium-zinc oxide (IZO), gold, silver, platinum, nickel, chromium, molybdenum, copper, aluminium, calcium or above-mentioned combination.As for anode 200 also can be transparent, opaque or reflexible individual layer or combining structure, for example can be single conductive layers such as gold, platinum, lithium, magnesium, calcium, aluminium or silver, or combining structures such as indium tin oxide, indium-zinc oxide, lithium fluoride/aluminium, beryllium/aluminium or magnesium/aluminium.
Then, electron transfer layer 106 can comprise material or the combination of materials that is enough to transmission electronic (electron-transport), and for example n type admixture becomes a n type doped layer in an organic material.On the other hand, 108 of hole transmission layers can comprise material or the combination of materials that is enough to transporting holes, and for example p type admixture becomes a p type doped layer in an organic material.Can select, electron transfer layer 106 can comprise material or the combination of materials that is enough to emitting electrons (electron-injection), transmission electronic or blocking hole (hole-blocking) or luminous (emitting), for example 8-hydroxyl quinoline aluminium salt (tris-(8-hydroxyquinoline) Aluminum, Alq3), fluorescent material (fluorescencematerial), phosphor material (phosphorescence material).108 of hole transmission layers can comprise material or the combination of materials that is enough to launch hole, transporting holes, block electrons.Spirit of the present invention is with IIA family metal, i.e. alkaline-earth metal, and for example beryllium, magnesium, calcium, strontium, barium, radium metal add between negative electrode 104 and the electron transfer layer 106, the stability when utilizing lower powered metal to improve element operation.Preferred embodiment is to form an electron injecting layer 202 between negative electrode 104 and electron transfer layer 106, and this moment, electron transfer layer 106 was a n type doped layer.According to above-mentioned, electron transfer layer 106 is formed an active layers to be responsible for transmission electronic/hole, emitting electrons/hole or the combination in any of luminous or above-mentioned three kinds of functions with hole transmission layer 108.
See also Figure 1B, be generalized section according to the organic illuminating element of another preferred embodiment of the present invention.As shown in FIG., one Organic Light Emitting Diode 15 comprises a ground 152, an anode 250 (anode), a hole transmission layer 158, an electron transfer layer 156 and a negative electrode 154, and wherein 252 of electron injecting layers are arranged between electron transfer layer 156 and the negative electrode 154.Each layer character of Organic Light Emitting Diode 15 is similar to the inversion type Organic Light Emitting Diode described in Figure 1A, repeats no more in this.Therefore, according to above-mentioned, electron injecting layer 252 also can be applicable to the Organic Light Emitting Diode of general type.
Fig. 2 A and Fig. 2 B are respectively does not have electron injecting layer 202 and adds the curve chart of the element voltage of electron injecting layer 202 to brightness, current density.In present embodiment, Fig. 2 A is the curve chart of the contrast element voltage of ITO/Cs2CO3:Bphen/Alq3/NPB/WO3/Al structure to brightness, current density, Fig. 2 B then is the curve chart of the contrast element voltage of ITO/Mg/Cs2CO3:Bphen/Alq3/NPB/WO3/Al structure to brightness, current density, wherein Bphen is 4,7-diphenyl-1,10-phenanthroline, NPB are N, N '-di (naphthalene-1-yl)-N, N '-diphthalbenzidine).Comparison diagram 2A and Fig. 2 B can find, element brightness with electrically be not affected because of the adding of electron injecting layer 202.Fig. 3 then is that above-mentioned two kinds of structures are in 100cd/m
2Initial brightness under, the situation of relative brightness decay.By learning on the figure that the element that adds electron injecting layer 202 has slowed down the situation of brightness decay.Fig. 4 then is that above-mentioned two kinds of structures are in 100cd/m
2Initial brightness under, the situation that increases of operating voltage.By learning on the figure that the element that adds electron injecting layer 202 has increased the situation of operating voltage stability.
Comprehensively above-mentioned, the present invention proposes a kind of organic illuminating element, comprise a substrate, a negative electrode on the substrate, an anode on the substrate, a hole transmission layer between negative electrode and the anode, an electron transfer layer is between hole transmission layer and negative electrode, an and electron injecting layer, an alkaline-earth metal material for example is between negative electrode and electron transfer layer.Wherein above-mentioned electron injecting layer can improve light-emitting component brightness decay and increase the element operation stability.
Above-described embodiment only is for technological thought of the present invention and characteristics are described, its purpose makes person skilled in the art scholar can understand content of the present invention and is implementing according to this, when not limited claim of the present invention, all variation that is equal to or modifications of doing according to disclosed spirit must be encompassed in the application's the claim scope.
Claims (11)
1. organic illuminating element comprises:
One substrate;
One anode of one negative electrode and corresponding setting is arranged on this substrate;
One hole transmission layer is between this negative electrode and this anode;
One electron transfer layer is between this hole transmission layer and this negative electrode; And
One electron injecting layer, between this negative electrode and this electron transfer layer, wherein the material of this electron injecting layer is an alkaline-earth metal.
2. organic illuminating element as claimed in claim 1 is characterized in that this alkaline-earth metal material comprises beryllium, magnesium, calcium, strontium, barium, radium or its combination.
3. organic illuminating element as claimed in claim 1 is characterized in that this cathode material comprises transparent, the opaque or reflexible individual layer or the combining structure of indium tin oxide, indium-zinc oxide, gold, silver, platinum, nickel, chromium, molybdenum, aluminium, calcium.
4. organic illuminating element as claimed in claim 1 is characterized in that this anode material comprises transparent, the opaque or reflexible individual layer or the combining structure of indium tin oxide, indium-zinc oxide, lithium fluoride/aluminium, magnesium/silver, aluminium, gold, platinum, calcium.
5. organic illuminating element as claimed in claim 1 is characterized in that this electron transfer layer is a n type doped layer.
6. organic illuminating element as claimed in claim 5 is characterized in that this hole transmission layer is a p type doped layer.
7. organic illuminating element as claimed in claim 1 is characterized in that also comprising a luminescent layer between this hole transmission layer and this electron transfer layer.
8. organic illuminating element as claimed in claim 7 is characterized in that this luminescent layer comprises micromolecule luminous organic material or 8-hydroxyl quinoline aluminium salt.
9. organic illuminating element as claimed in claim 7 is characterized in that also comprising a hole blocking layer between this luminescent layer and this electron transfer layer.
10. organic illuminating element as claimed in claim 1 is characterized in that also comprising a hole injection layer between this hole transmission layer and this anode.
11. organic illuminating element as claimed in claim 1 is characterized in that comprising an inversion type organic illuminating element.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA2006101217001A CN101132053A (en) | 2006-08-21 | 2006-08-21 | Organic luminous element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA2006101217001A CN101132053A (en) | 2006-08-21 | 2006-08-21 | Organic luminous element |
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| CN101132053A true CN101132053A (en) | 2008-02-27 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112885872A (en) * | 2020-01-21 | 2021-06-01 | 创王光电股份有限公司 | Light emitting element |
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2006
- 2006-08-21 CN CNA2006101217001A patent/CN101132053A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112885872A (en) * | 2020-01-21 | 2021-06-01 | 创王光电股份有限公司 | Light emitting element |
| CN112885872B (en) * | 2020-01-21 | 2023-01-13 | 创王光电股份有限公司 | Light emitting element |
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