CN100420066C - Organic electroluminescent element and display device including the same - Google Patents
Organic electroluminescent element and display device including the same Download PDFInfo
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- CN100420066C CN100420066C CNB2005100592575A CN200510059257A CN100420066C CN 100420066 C CN100420066 C CN 100420066C CN B2005100592575 A CNB2005100592575 A CN B2005100592575A CN 200510059257 A CN200510059257 A CN 200510059257A CN 100420066 C CN100420066 C CN 100420066C
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Abstract
The present invention discloses an organic electroluminescent element in an upward light emitting form or a double-side light emitting form. The organic electroluminescent element comprises a baseplate, a first electrode formed on the baseplate, an electroluminescent material layer formed on the first electrode, a buffer layer formed on the electroluminescent material layer and a second electrode formed on the buffer layer, wherein the buffer layer comprises n-shaped semiconductor compounds.
Description
Technical field
The present invention relates to a kind of organic electroluminescent element, particularly relate to a kind of organic electroluminescent element of luminous or double-side.
Background technology
In recent years, along with the progress of electronic product Development Technology and increasingly extensive application thereof, it similarly is the city of asking of mobile phone, PDA and mobile computer, make the demand of comparing flat-panel screens with traditional monitor grow with each passing day, become one of present most important electronic application product with smaller size smaller and power consumption characteristic.In the middle of flat-panel screens because organic electric-excitation luminescent spare has characteristics such as self-luminous, high brightness, wide viewing angle, high answer speed and manufacturing process be easy, make organic electric-excitation luminescent spare undoubtedly will become next optimal selection of flat-panel screens from generation to generation.
(organic light emitting diode OLED) for using the light-emitting diode of organic layer as active layer (active layer), is used on the flat panel display (flatpanel display) Organic Light Emitting Diode in recent years gradually.Organic Light Emitting Diode can be divided into down illuminated Organic Light Emitting Diode, go up illuminated Organic Light Emitting Diode and double-side formula Organic Light Emitting Diode according to light emission direction.
No matter be to go up illuminated or double-side formula Organic Light Emitting Diode, except anode and electroluminescence material layer, also include a transparent cathode, so that Organic Light Emitting Diode can outwards send light by cathode side by this transparent cathode.The preparation method of this transparent cathode can be the metal level that utilizes hot evaporation to form a thinner thickness, for example: and magnesium, silver, aluminium, or utilize the sputter mode to form a transparent conductive layer, for example: indium tin oxide (ITO) or indium-zinc oxide (IZO).In general, owing to utilize its adhesiveness of the formed metal level of hot evaporation (adhesion) relatively poor for the electroluminescence material layer, and thin metal layer has lower penetration, therefore in order to obtain the higher transparent cathode of penetration, form transparent ITO or IZO electrode in industrial quarters general using sputter mode.
Yet, form in the process of transparency conducting layer in sputter, because the electroluminescence material layer as carrier layer (under layer) can be subjected to the emitted ion bombardment of target, and then make electroluminescence material surface oxidation, rotten or make evenness originally destroyed, thereby make the energy barrier of the heterogeneous interface between transparent cathode and the electroluminescence material layer increase, cause carrier to be difficult for entering to the electroluminescence material layer and producing accumulation at the interface by transparent cathode, thus, will cause the rising of element operation voltage and component life to descend.
In order to address the above problem, (for example United States Patent (USP) the 6th on this electroluminescence material layer in order to form an organic material or polymer material layer for one conventional practice, 402, No. 579 employed CuPc (Copperphthalocyanine) and United States Patent (USP) the 6th, 420, No. 031 employed MEH-PPV), as resilient coating.Yet, though can preventing the electroluminescence material layer, the above-mentioned practice is subjected to the bombardment of ion and deterioration, the interface between resilient coating and the transparency electrode still exists the problem that evenness is not good and impurity disturbs.
In addition, in general, a transparency conducting layer can be through an annealing manufacturing process to reduce interface resistance to 30 Ω/side after formation.Yet, because last transparent cathode illuminated or double-side formula Organic Light Emitting Diode just forms after the electroluminescence material layer, for fear of injury electroluminescence material layer, therefore this transparent cathode can't utilize the annealing manufacturing process to reduce face resistance, so face resistance is generally near 100 Ω/sides, so high face resistance will significantly increase element action required voltage, cause the element luminous efficiency to reduce.
Therefore, developing and brand-new last illuminated or double-side formula organic electroluminescent element structure and manufacturing process, to solve the above problem, is to need one of emphasis of research badly on the present organic electric exciting light-emitting diode manufacturing process technology.
Summary of the invention
In view of this, the purpose of this invention is to provide a kind of organic electroluminescent element, it has a resilient coating of being made up of n N-type semiconductor N compound.This n N-type semiconductor N compound resilient coating has the ability of transmitting electronics; also have extremely enough rigidity; can effectively stop the ion bombardment of transparent cathode sputter manufacturing process,, also can keep the smooth of resilient coating and transparent cathode interface except protecting the electroluminescence material layer preserves from.
Another object of the present invention is for providing a kind of organic electroluminescent element, and it has the transparent cathode structure of a bottom surface resistance, can effectively solve the excessive problem of cross-pressure that panel is shared source terminal (transparent cathode end).
Another purpose of the present invention comprises organic electroluminescent element of the present invention for a kind of display unit is provided.
For obtaining above-mentioned purpose, organic electroluminescent element of the present invention comprises a substrate at least, and an anode, an electroluminescence material layer, a resilient coating and a transparent cathode are formed on this substrate in regular turn.Wherein, this resilient coating comprises n N-type semiconductor N compound.
In addition, according to one preferred embodiment of the present invention, the transparent cathode of this organic electroluminescent element, in regular turn by a transparency conducting layer, a metal level and a protective layer, constitute.
According to organic electroluminescent element of the present invention, wherein substrate can be transparent or opaque substrate.This organic electroluminescent element can be a top luminous (top-emission) element, also can be one or two surface-emitting type element.
Moreover display unit of the present invention comprises that one meets organic electroluminescent element of the present invention, an and power-supply unit, wherein, this power-supply unit is coupled to organic electroluminescent element, in order to supply power to the active formula organic electroluminescent element of this full-colorization.
For above-mentioned purpose of the present invention, feature can be become apparent, following conjunction with figs. and preferred embodiment are to illustrate in greater detail the present invention.
Description of drawings
Fig. 1 is for showing the cross-sectional view of organic electroluminescent element one preferred embodiment of the present invention.
Fig. 2 is for showing the cross-sectional view of another preferred embodiment of organic electroluminescent element of the present invention.
Fig. 3 is for showing the cross-sectional view of the another preferred embodiment of organic electroluminescent element of the present invention.
Fig. 4 is for showing thickness and the transparent cathode relation of plane figure of its metal level of transparent cathode of the present invention 20b.
Fig. 5 is the thickness of its metal level of demonstration transparent cathode of the present invention 20b and the graph of a relation of transparent cathode light transmittance.
Fig. 6 is for showing first its cross-sectional view of the embodiment of the invention 1 described organic electric-excitation luminescent.
Fig. 7 is for showing first its cross-sectional view of the embodiment of the invention 2 described organic electric-excitation luminescents.
Fig. 8 is for showing first its cross-sectional view of comparing embodiment 1 described organic electric-excitation luminescent of the present invention.
Fig. 9 is for showing organic electroluminescent element embodiment 1 of the present invention, embodiment 2, the operating voltage that reaches comparing embodiment 1 and the graph of a relation of current density.
Figure 10 is for showing organic electroluminescent element embodiment 1 of the present invention, embodiment 2, the operating voltage that reaches comparing embodiment 1 and the graph of a relation of brightness.
Figure 11 is for showing organic electroluminescent element embodiment 1 of the present invention, embodiment 2, the operating voltage that reaches comparing embodiment 1 and the graph of a relation of photochromic (cie-x).
Figure 12 is for showing organic electroluminescent element embodiment 1 of the present invention, embodiment 2, the operating voltage that reaches comparing embodiment 1 and the graph of a relation of photochromic (cie-y).
Figure 13 for the operating voltage that shows organic electroluminescent element embodiment 1 of the present invention, embodiment 2 and comparing embodiment 1 with the graph of a relation of luminous efficiency.
The simple symbol explanation
10～organic electroluminescent element; 12～substrate;
14～anode; 16～electroluminescence material layer;
16a～luminescent layer; 16b～hole injection layer;
16c～hole transmission layer; 16d～electron transfer layer;
16e～electron injecting layer; 17～thin conductive layer;
18～resilient coating; 20～transparent cathode;
20a～transparency conducting layer; 20b～metal level;
20～protective layer; 100～organic electroluminescent element;
110～substrate; 120～reflector;
130～anode; 140～electroluminescence material layer;
141～hole injection layer; 142～hole transmission layer;
143～luminescent layer; 144～electron transfer layer;
145～electron injecting layer; 150～thin conductive layer;
160～resilient coating; 170～transparency conducting layer;
180～composite cathode structure; 181～transparency conducting layer;
182～metal level; And 183～protective layer.
Embodiment
Organic electroluminescent element of the present invention, its characteristics are that it has a resilient coating that is made of n N-type semiconductor N compound, and this resilient coating is formed between electroluminescence material layer and the transparent cathode.Organic Light-Emitting Device of the present invention, it comprises substrate, anode, electroluminescence material layer, n N-type semiconductor N compound resilient coating at least, reaches transparent cathode.
Below, showing a preferred embodiment that meets organic electroluminescent element of the present invention, conjunction with figs. is described in detail as follows now:
Please refer to Fig. 1, this organic electroluminescent element 10 comprises a substrate 12, for example: glass, pottery, plastic base or semiconductor substrate.This substrate can optionally be selected for use, also even desire forms illuminated (top-emission) organic electroluminescent element on, then this substrate can be an opaque substrate: in addition, if desire forms the illuminated organic electroluminescent element in a two sides, then this substrate can be a transparency carrier.
Then, form an anode 14 in the upper surface of this substrate 12.This anode can be transparency electrode, metal electrode or combination electrode, its material can be for example for can selecting from by lithium, magnesium, calcium, aluminium, silver, indium, gold, tungsten, nickel, platinum, the formed alloy of above-mentioned element, indium tin oxide (ITO), indium-zinc oxide (IZO), Zinc-aluminium (AZO), zinc oxide (ZnO) or its combination, and its generation type can be hot evaporation, sputter or plasma fortified formula chemical vapour deposition (CVD) mode.In one embodiment of the present invention, between this anode 14 and this substrate 12, can also comprise a reflector.
Then, form an electroluminescence material layer 16 on this anode 14.This electroluminescence material layer 16 comprises a luminescent layer 16a (light emitting layer) at least, and more can comprise a hole injection layer 16b, a hole transmission layer 16c, an electron transfer layer 16d, an and electron injecting layer 16e, still please refer to Fig. 1.Each rete of this electroluminescence material layer 16 can be respectively micromolecule organic electric-excitation luminescent material or macromolecule organic electric-excitation luminescent material, if micromolecule Organic Light Emitting Diode material can utilize the vacuum evaporation mode to be formed with the OLED material layer; If macromolecule Organic Light Emitting Diode material then can use modes such as rotary coating, ink-jet or screen painting to be formed with the OLED material layer.In addition, this luminescent layer 16a can comprise an organic electric-excitation luminescent material and an alloy (dopant), visual employed organic electric-excitation luminescent material of those skilled in the art and required element characteristic and change the doping of the alloy of being arranged in pairs or groups.Therefore, the non-pass of the number of the doping of alloy feature of the present invention, non-foundation for the restriction scope of the invention.This alloy can be energy and shifts (energy transfer) type dopant material or carrier capture (carrier trapping) type dopant material, and this alloy helps to suppress this organic electric-excitation luminescent concentration of material frosting phenomenon, and makes element obtain high efficiency and high brightness.This organic electric-excitation luminescent material can be fluorescence (fluorescence) luminescent material.And in some preferred embodiment of the present invention, this organic electric-excitation luminescent material also can be phosphorescence (phosphorescence) luminescent material.
Then, a resilient coating 18 is formed on this electroluminescence material layer 16, and wherein this resilient coating comprises n N-type semiconductor N compound, and this n N-type semiconductor N compound is wide energy gap semiconductor, and thickness is between 10～2000
Between, preferably between 50～1500
And its energy gap can for example be fullerene (fullerene) compound greater than 1.0eV.In addition according to one preferred embodiment of the present invention, for impelling carrier easily to enter the electroluminescence material layer by n N-type semiconductor N compound resilient coating, this organic electroluminescent element can comprise also that a conductive layer 17 is formed between this n N-type semiconductor N compound resilient coating 18 and this electroluminescence material layer 16, and this thin conductive layer 17 can for example be that a thickness is between 10～500
Metal level, for example aluminum metal layer please refer to Fig. 2.
At last, form a transparent cathode 20 on this resilient coating 18, it should be noted that this transparent cathode 20 is being close to this resilient coating 18.At this, this transparent cathode 20 can be merely a transparency conducting layer, and this transparency conducting layer comprises indium tin oxide (ITO), indium-zinc oxide (IZO), Zinc-aluminium (AZO), zinc oxide (ZnO), gallium nitride, InGaN, cadmium sulfide, zinc sulphide, cadmium selenide or zinc selenide.
In addition; for further the face resistance drop of transparent cathode 20 being low to moderate 30 Ω/below the side; according to a preferred embodiment of the invention; this transparent cathode 20 can have a composite film structure; constituted by a transparency conducting layer 20a, a metal level 20b and a protective layer 20c in regular turn from down to up, be please refer to Fig. 3.Wherein this transparency conducting layer 20a can comprise indium tin oxide (ITO), indium-zinc oxide (IZO), Zinc-aluminium (AZO), zinc oxide (ZnO), gallium nitride, InGaN, cadmium sulfide, zinc sulphide, cadmium selenide or zinc selenide; The main function of this protective layer 20c is to protect this metal level 20b not influenced and oxidation by aqueous vapor or oxygen in the external environment; the material of this protective layer 20c can be transparency electrode, conducting polymer or wide energy gap semiconductor, for example: indium tin oxide (ITO), indium-zinc oxide (IZO), Zinc-aluminium (AZO), zinc oxide (ZnO), gallium nitride, InGaN, cadmium sulfide, zinc sulphide, cadmium selenide, zinc selenide, polypyrrole, polyaniline or polythiophene.For effectively reducing the face resistance of this transparent cathode 20, the material of this metal level 20b is preferably conductance greater than 10
5Cm
-1Ω
-1Metal, for example be silver.In addition, please refer to Fig. 4 and Fig. 5, show respectively this metal level 20b under different-thickness for the face resistance of this transparent cathode 20 and the relation of light transmittance, by among the figure as can be known, the thickness of this metal level 20b is preferably between 20～50
Between.
Below by embodiment 1, embodiment 2 and comparing embodiment 1 actual composition and advantage of the present invention place of each layer of organic electroluminescent element of the present invention is described.
Please refer to Fig. 6, this organic electroluminescent element 100 is an illuminated element on, and this substrate 110 is a glass substrate.Be a reflector 120 on this substrate 110, its material is a titanium, and thickness is 500
And this anode 130 is an ito transparent electrode, and thickness is 750
This electroluminescence material layer 140 comprises a hole injection layer 141, hole transmission layer 142, luminescent layer 143, electron transfer layer 144 from lower to upper in regular turn, reaches electron injecting layer 145.The material of this hole injection layer 141 is CuPc (Copperphthalocyanine), and thickness is 200
The material of this hole transmission layer 142 be NPB (N, N '-di-1-naphthyl-N, N '-diphenyl-1,1 '-biphenyl-1,1 '-biphenyl-4,4 '-diamine), thickness is 400
The thickness of this luminescent layer 143 is 300
With Alq
3(tris (8-hydroxyquinoline) aluminume) and NPB (1: 1) be as the organic electric-excitation luminescent material, and with C545T (10-(2-Benzothiazolyl)-2,3,6,7-tetrahydro-1,1,7,7-tetramethyl-1H, 5H, 11H-(1)-benzopyropyrano (6,7-8-i, j) quinolizin-11-one) as the admixture thing, the doping of C545T is 1.1%wt, is benchmark with the total weight of this organic electric-excitation luminescent material; The material of this electron transfer layer 144 is Alq
3, thickness is 400
The material of this electron injecting layer 145 is lithium fluoride (lithiumfluoride), and thickness is 10
The material of this resilient coating 160 is for comprising fullerene (fullerene), and thickness is 50
Wherein, also comprise a thin conductive layer 150 between this electroluminescence material layer 140 and resilient coating 160, and the material of this conductive layer 150 is an aluminium, thickness is 20
This transparent cathode is a transparency conducting layer 170, and its material is the IZO electrode, and thickness is 800
The structure of this organic electroluminescent element can be expressed as:
Ti?500
/ITO?750
/CuPc?200
/NPB?400
/(Alq
3∶NPB＝1∶1)：C545T1.1％300
/Alq
3400
/LiF?10
/Al?20
/fullerene?50
/IZO?800
The The performance test results of this organic electroluminescent element is as shown in table 1.
The photoelectric characteristic of table 1: embodiment 1 organic electroluminescent element
Please refer to Fig. 7, embodiment 2 described organic electroluminescent elements 100 partly replace the transparency conducting layer 170 with a composite cathode structure 180 except transparent cathode, and the composition of all the other each retes is all identical with embodiment 1.This composite cathode structure 180 is a transparency conducting layer 181, a metal level 182, an and protective layer 183 from down to up in regular turn.The material of this transparency conducting layer 181 is IZO, and thickness is 400
The material of this metal level 182 is a silver, and thickness is 20
The material of this protective layer 183 is IZO, and thickness is 400
The structure of this organic electroluminescent element can be expressed as:
Ti?500
/ITO?750
/CuPc?200
/NPB?400
/(Alq
3∶NPB＝1∶1)：C545T1.1％300
/Alq
3400
/LiF?10
/A120
/fullerene?50
/IZO?400
/Ag?20
/IZO?400
The The performance test results of this organic electroluminescent element is as shown in table 2.
The photoelectric characteristic test result of table 2: embodiment 2 organic electroluminescent elements
Comparing embodiment 1
Comparing embodiment 1 described organic electroluminescent element structure please refer to Fig. 8 for removing embodiment 1 described resilient coating 160.The structural table of this organic electroluminescent element is shown:
Ti?500
/ITO?750
/CuPc?200
/NPB?400
/(Alq
3∶NPB＝1∶1)：C545T1.1％300
/Alq
3400
/LiF?10
/A120
/IZO?800
The The performance test results of this organic electroluminescent element is as shown in table 3.
Table 3: the photoelectric characteristic test of comparing embodiment 1 organic electroluminescent element
Fig. 9 to Figure 13 is embodiment 1, embodiment 2, the element characteristic graph of a relation that reaches comparing embodiment 1, and the otherness of organic electroluminescent element of the present invention and prior art is described.Fig. 9 is the graph of a relation of display voltage and current density; Figure 10 is the graph of a relation of display operation voltage and brightness; Figure 11 is for showing the graph of a relation of operating voltage and photochromic (cie-x); Figure 12 is the graph of a relation of display operation voltage and photochromic (cie-y); And Figure 13 is the graph of a relation of display voltage and luminous efficiency.
Can find out by Fig. 9, Figure 10 and table 4, organic electroluminescent element of the present invention (embodiment 1 and 2) is compared with existing organic electroluminescent element (comparing embodiment 1 and 2), has lower element drives voltage and preferred efficiency of element under same brightness.Its reason is the present invention before carrying out the sputter manufacturing process of IZO, is pre-formed a n N-type semiconductor N compound layer, as the sputter resilient coating, prevents that electroluminescence material layer 140 or thin conductive layer 150 from suffering the deterioration that ion bombardment causes or the phenomenon of erosion.In addition; as the embodiment of the invention 2 described organic electroluminescent elements; cathode electrode of the present invention also can comprise a good conductive metal layer and a protective layer that one deck is thin except having a transparency conducting layer, can make the face resistance of this transparent cathode reduce by 30 Ω/below the side.Thus, can significantly reduce the operating voltage of organic electroluminescent element, lift elements efficient.
Table 4
In sum, the organic electroluminescent element of two mixed layer structures that the present invention discloses, have lower operating voltage, reach preferred luminous efficiency, can be used to replace organic electroluminescent element illuminated traditionally or the double-side formula, and can further solve problem illuminated traditionally or its transparent cathode face too high in resistance of double-side formula organic electroluminescent element.
Though the present invention discloses as above with preferred embodiment; yet it is not in order to limit the present invention; those skilled in the art can do a little change and retouching without departing from the spirit and scope of the present invention, thus protection scope of the present invention should with accompanying Claim the person of being defined be as the criterion.
Claims (22)
1. organic electroluminescent element comprises:
One substrate;
One first electrode is formed on this substrate;
One electroluminescence material layer is formed on this first electrode;
One resilient coating is formed on this electroluminescence material layer, and wherein this resilient coating comprises n N-type semiconductor N compound; And
One second electrode is formed on this resilient coating.
2. organic electroluminescent element as claimed in claim 1, wherein this second electrode is close to this resilient coating.
3. organic electroluminescent element as claimed in claim 1, wherein the thickness of this resilient coating is between 10～2000
Scope in.
4. organic electroluminescent element as claimed in claim 1, wherein the material of this first electrode is a metal electrode or transparency electrode.
5. organic electroluminescent element as claimed in claim 1, wherein this substrate is glass substrate, ceramic substrate, plastic base or semiconductor substrate.
6. organic electroluminescent element as claimed in claim 1, wherein this electroluminescence material layer comprises hole transmission layer, luminescent layer, reaches electron transfer layer.
7. organic electroluminescent element as claimed in claim 1, wherein this electroluminescence material layer is micromolecule organic electric-excitation luminescent material or macromolecule organic electric-excitation luminescent material.
8. organic electroluminescent element as claimed in claim 1, wherein this resilient coating comprises fullerene compound.
9. organic electroluminescent element as claimed in claim 1, wherein this n N-type semiconductor N compound is wide energy gap semiconductor, and its energy gap is greater than 1.0eV.
10. organic electroluminescent element as claimed in claim 1 comprises that also a conductive layer is formed between this electroluminescence material layer and this resilient coating.
11. organic electroluminescent element as claimed in claim 10, wherein the thickness of this conductive layer is between 10～500
Scope in.
12. organic electroluminescent element as claimed in claim 1, wherein this second electrode is a transparency conducting layer, and this transparency conducting layer comprises indium tin oxide, indium-zinc oxide, Zinc-aluminium, zinc oxide, gallium nitride, InGaN, cadmium sulfide, zinc sulphide, cadmium selenide or zinc selenide.
13. organic electroluminescent element as claimed in claim 1, wherein this second electrode comprises:
One transparency conducting layer is formed on this resilient coating;
One metal level is formed on this first transparency conducting layer; And
One protective layer is formed on this metal level.
14. organic electroluminescent element as claimed in claim 13, wherein this transparency conducting layer comprises indium tin oxide, indium-zinc oxide, Zinc-aluminium, zinc oxide, gallium nitride, InGaN, cadmium sulfide, zinc sulphide, cadmium selenide or zinc selenide.
15. organic electroluminescent element as claimed in claim 13, wherein the material of this protective layer is a transparency electrode, conducting polymer can gap semiconductor or wide.
16. organic electroluminescent element as claimed in claim 13, wherein this protective layer comprises indium tin oxide, indium-zinc oxide, Zinc-aluminium, zinc oxide, gallium nitride, InGaN, cadmium sulfide, zinc sulphide, cadmium selenide or zinc selenide.
17. organic electroluminescent element as claimed in claim 13, wherein this protective layer comprises polypyrrole, polyaniline or polythiophene.
18. organic electroluminescent element as claimed in claim 13, wherein this metal layer thickness is between 10～500
Scope in.
19. organic electroluminescent element as claimed in claim 13, wherein the conductance of this metal level is greater than 10
5Cm
-1Ω
-1
20. organic electroluminescent element as claimed in claim 13, wherein the material of this metal level is a silver.
21. organic electroluminescent element as claimed in claim 13, wherein the face resistance of this second electrode lay is lower than 30 Ω/sides.
22. a display unit comprises:
One organic electroluminescent element, and
One power-supply unit is coupled to organic electroluminescent element, in order to supplying power to the active formula organic electroluminescent element of this full-colorization,
Wherein, this organic electroluminescent element comprises:
One substrate;
One first electrode is formed on this substrate;
One electroluminescence material layer is formed on this first electrode;
One resilient coating is formed on this electroluminescence material layer, and wherein this resilient coating comprises n N-type semiconductor N compound; And
One second electrode is formed on this resilient coating.
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| CN104078582A (en) * | 2013-03-27 | 2014-10-01 | 海洋王照明科技股份有限公司 | Organic light-emitting device and fabrication method thereof |
| CN104078600A (en) * | 2013-03-29 | 2014-10-01 | 海洋王照明科技股份有限公司 | Organic light-emitting diode device and manufacturing method thereof |
| CN104103769A (en) * | 2013-04-09 | 2014-10-15 | 海洋王照明科技股份有限公司 | Organic light-emitting display and manufacturing method thereof |
| CN104103768A (en) * | 2013-04-09 | 2014-10-15 | 海洋王照明科技股份有限公司 | Organic light-emitting display and manufacturing method thereof |
| CN104183705A (en) * | 2013-05-20 | 2014-12-03 | 海洋王照明科技股份有限公司 | Organic electroluminescent device and preparation method thereof |
| CN104183713A (en) * | 2013-05-22 | 2014-12-03 | 海洋王照明科技股份有限公司 | Top-emission organic light emission diode and preparation method thereof |
| CN104600136A (en) * | 2015-01-13 | 2015-05-06 | 福建铂阳精工设备有限公司 | Manufacturing method of hetero-junction solar cell and hetero-junction solar cell |
| CN108630818A (en) * | 2017-03-15 | 2018-10-09 | Tcl集团股份有限公司 | Light emitting diode with quantum dots device and preparation method thereof with Novel anode structure |
| CN111244317B (en) * | 2018-11-27 | 2022-06-07 | 海思光电子有限公司 | Light emitting device and terminal equipment |
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| CN1409413A (en) * | 2001-09-19 | 2003-04-09 | 伊斯曼柯达公司 | Sputtering cathode with heavy alkaline metal halide in organic light-emitting device structure |
| JP2003297575A (en) * | 2002-04-08 | 2003-10-17 | Toyota Central Res & Dev Lab Inc | Organic electroluminescent element |
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Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1409413A (en) * | 2001-09-19 | 2003-04-09 | 伊斯曼柯达公司 | Sputtering cathode with heavy alkaline metal halide in organic light-emitting device structure |
| JP2003297575A (en) * | 2002-04-08 | 2003-10-17 | Toyota Central Res & Dev Lab Inc | Organic electroluminescent element |
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