CN101131979A - Non-exterior pin semiconductor packaging construction plated in sealing glue and method of manufacturing the same - Google Patents
Non-exterior pin semiconductor packaging construction plated in sealing glue and method of manufacturing the same Download PDFInfo
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- CN101131979A CN101131979A CNA2006101114772A CN200610111477A CN101131979A CN 101131979 A CN101131979 A CN 101131979A CN A2006101114772 A CNA2006101114772 A CN A2006101114772A CN 200610111477 A CN200610111477 A CN 200610111477A CN 101131979 A CN101131979 A CN 101131979A
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 92
- 238000007789 sealing Methods 0.000 title claims abstract description 31
- 238000010276 construction Methods 0.000 title claims description 86
- 238000004519 manufacturing process Methods 0.000 title claims description 43
- 239000003292 glue Substances 0.000 title description 4
- 238000005530 etching Methods 0.000 claims abstract description 21
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- 239000000853 adhesive Substances 0.000 claims description 78
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- 238000000034 method Methods 0.000 claims description 58
- 239000011248 coating agent Substances 0.000 claims description 53
- 238000000576 coating method Methods 0.000 claims description 53
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 6
- MSNOMDLPLDYDME-UHFFFAOYSA-N gold nickel Chemical compound [Ni].[Au] MSNOMDLPLDYDME-UHFFFAOYSA-N 0.000 claims description 6
- LQBJWKCYZGMFEV-UHFFFAOYSA-N lead tin Chemical compound [Sn].[Pb] LQBJWKCYZGMFEV-UHFFFAOYSA-N 0.000 claims description 6
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 5
- JWVAUCBYEDDGAD-UHFFFAOYSA-N bismuth tin Chemical compound [Sn].[Bi] JWVAUCBYEDDGAD-UHFFFAOYSA-N 0.000 claims description 5
- 229910052709 silver Inorganic materials 0.000 claims description 5
- 239000004332 silver Substances 0.000 claims description 5
- -1 NiPdAu Chemical compound 0.000 claims description 4
- 238000012545 processing Methods 0.000 abstract description 7
- 238000009713 electroplating Methods 0.000 abstract description 6
- 239000000758 substrate Substances 0.000 abstract description 5
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- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
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- 238000000748 compression moulding Methods 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/10—Bump connectors ; Manufacturing methods related thereto
- H01L24/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L24/14—Structure, shape, material or disposition of the bump connectors prior to the connecting process of a plurality of bump connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L2224/14—Structure, shape, material or disposition of the bump connectors prior to the connecting process of a plurality of bump connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/91—Methods for connecting semiconductor or solid state bodies including different methods provided for in two or more of groups H01L2224/80 - H01L2224/90
- H01L2224/92—Specific sequence of method steps
- H01L2224/922—Connecting different surfaces of the semiconductor or solid-state body with connectors of different types
- H01L2224/9222—Sequential connecting processes
- H01L2224/92242—Sequential connecting processes the first connecting process involving a layer connector
- H01L2224/92247—Sequential connecting processes the first connecting process involving a layer connector the second connecting process involving a wire connector
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/153—Connection portion
- H01L2924/1531—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
- H01L2924/15311—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a ball array, e.g. BGA
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
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- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Lead Frames For Integrated Circuits (AREA)
Abstract
The present invention relates to a non-external-pin semiconductor packaging which is electroplated in sealing colloid and its processing method. The packaging mainly includes a half-etched conductor frame, a wafer, a sealing colloid and an electroplating layer. The half-etched conductor frame has even numbers of pins and even numbers of external pads connected to these pins. The colloid seals the wafer and these pins have even numbers of counterbores which aim to the external pads, thus the electroplating layers formed on the external pads can be embedded in these counterbores. The present invention can replace current substrate and welding-prevented layer with low cost and high heat-transferred efficiency, prevent damage of the semiconductor packaging caused by transport and storage, and increase combination of pins in the sealing colloid. In addition, the packaging processing includes two steps of half etching the conductor frame, in which the second step of half etching is carried after forming the sealing colloid and before forming the electroplating layer.
Description
Technical field
The present invention relates to a kind of non-exterior pin semiconductor packaging construction (leadless semiconductor package) that uses lead frame as chip carrier, particularly relate to a kind of can be under the benefit of low-cost and high heat conduction existing circuit substrate of displacement and welding resisting layer, can prevent in carrying or store time damage electrodeposited coating, promote pin in adhesive body adhesion and promote outside connection pad in the non-exterior pin semiconductor packaging construction and the manufacture method thereof in the sealing of being plated on of adhesive body internal bond.
Background technology
Non-exterior pin semiconductor packaging construction, for example square flat outer-pin-free encapsulates (Quad FlatNonleaded, QFN) or thin little outward appearance do not have outer pin package (Thin Small Outline Nonleaded TSON), be a kind of encapsulating products with low-cost and high heat conduction.The lead frame that use not to have outer pin is as chip carrier, and the lower surface of pin is as externally electric connection in utilizing, so the outer pin that need be extended outward by the adhesive body side not, the size of encapsulating products is microminiaturization further.United States Patent (USP) the 6th, 143 has then disclosed a kind of non-exterior pin semiconductor packaging construction with architecture No. 981.
Yet the material of lead frame is normally for being easy to etched metal, for example copper, iron or its alloy are beneficial to be shaped, but relatively can produce corrosion phenomena, so should electroplate electrodeposited coating at the exposed surface of interior pin, and help seam to a external circuit board just like nickel gold, tin or tin lead.Usually this plating step belongs to back-end process, the processing flow of at present existing known non-exterior pin semiconductor packaging construction includes sticking crystalline substance, electric connection, sealing, plating in regular turn and step such as singly cuts, after adhesive body forms, electrodeposited coating is formed in the lower surface of interior pin, and is protruding in the bottom surface of adhesive body.TaiWan, China patent of invention I244745 number " in order to make encapsulation constitution without external pin and lead frame " then discloses a kind of relevant encapsulation procedure.
Therefore, in present non-exterior pin semiconductor packaging construction, can be for all being the bottom surfaces that are protruding in or flush in adhesive body to the electrodeposited coating of outer engagement, thus the carrying of encapsulating products, store with the process that stacks in, electrodeposited coating is easily because of collision or rub and cause damaging.In addition, along with the carrying out of electroplating, owing to lack the limitation of welding resisting layer, electrodeposited coating can cause electrical problem of short-circuit and have toward the periphery diffusion that exposes the pin surface.
Moreover, another problem that existing known non-exterior pin semiconductor packaging construction exists is, most area of the interior pin lower surface of lead frame all is the bottom surfaces that expose to adhesive body before plating, and lack enough adhesions between the adhesive body, so in the thermal cycle process of wafer computing, peel off easily or get loose.
This shows that above-mentioned existing non-exterior pin semiconductor packaging construction and manufacture method thereof obviously still have inconvenience and defective, and demand urgently further being improved in product structure, manufacture method and use.For solving the problem of above-mentioned existence, relevant manufacturer there's no one who doesn't or isn't seeks solution painstakingly, but do not see always that for a long time suitable design finished by development, and common product and method do not have appropriate structure and method to address the above problem, and this obviously is the problem that the anxious desire of relevant dealer solves.Therefore how to found a kind of new non-exterior pin semiconductor packaging construction and manufacture method thereof that is plated in the sealing, real one of the current important research and development problem that belongs to, also becoming the current industry utmost point needs improved target.
Because the defective that above-mentioned existing non-exterior pin semiconductor packaging construction and manufacture method thereof exist, the inventor is based on being engaged in this type of product design manufacturing abundant for many years practical experience and professional knowledge thereof, and the utilization of cooperation scientific principle, actively studied innovation, in the hope of founding a kind of new non-exterior pin semiconductor packaging construction and manufacture method thereof that is plated in the sealing, can improve general existing non-exterior pin semiconductor packaging construction and manufacture method thereof, make it have more practicality.Through constantly research, design, and after studying sample and improvement repeatedly, create the present invention who has practical value finally.
Summary of the invention
Main purpose of the present invention is, overcome the defective that existing non-exterior pin semiconductor packaging construction and manufacture method thereof exist, and a kind of new non-exterior pin semiconductor packaging construction and manufacture method thereof that is plated in the sealing be provided, technical problem to be solved is to make it displacement have known circuit substrate and welding resisting layer now under the benefit of low-cost and high heat conduction, and can prevent that semiconductor packaging structure from damaging this electrodeposited coating when carrying or storing, and have the effect of promoting the adhesion of pin in adhesive body, thereby be suitable for practicality more.
Of the present invention time a purpose is, a kind of new non-exterior pin semiconductor packaging construction and manufacture method thereof that is plated in the sealing is provided, technical problem to be solved is to make it can define the displaying area of those outer connection pads, and can omit the member of existing known welding resisting layer and still possess anti-welding effect, and have the effect that to promote the adhesion of those outer connection pads in adhesive body, thereby be suitable for practicality more.
An also purpose of the present invention is, a kind of new non-exterior pin semiconductor packaging construction and manufacture method thereof that is plated in the sealing is provided, technical problem to be solved is to make it carry out twice the processing procedure that etches partially to a lead frame, strengthen pin adhesion and the effect that prevents the electrodeposited coating damage and have, thereby be suitable for practicality more.
The object of the invention to solve the technical problems realizes by the following technical solutions.According to a kind of non-exterior pin semiconductor packaging construction that the present invention proposes, it comprises: half-etched conductor frame, and it has a plurality of pins and a plurality of outer connection pad that is connected by those pins; One wafer, it is electrically connected to those pins; One adhesive body, it seals this wafer and those pins, and this adhesive body has a plurality of counterbores, and it is in alignment with those outer connection pads; And an electrodeposited coating, it is formed at those outer connection pads and is embedded in those counterbores.
The object of the invention to solve the technical problems also can be applied to the following technical measures to achieve further.
Aforesaid non-exterior pin semiconductor packaging construction method, the aperture of those counterbores of wherein said adhesive body are to be slightly less than those outer connection pads, to define the displaying area of those outer connection pads.
Aforesaid non-exterior pin semiconductor packaging construction method, the wherein said lead frame that partly loses has a wafer holder in addition, with this wafer of adhering.
Aforesaid non-exterior pin semiconductor packaging construction method, wherein said adhesive body has a sinker area in addition, and it is the lower surface that the part appears this wafer holder, forms this electrodeposited coating in order to embedding bury type.
Aforesaid non-exterior pin semiconductor packaging construction method, the wherein said lead frame that partly loses has a plurality of tie-rods in addition, and it connects this wafer holder and is coated up and down by this adhesive body.
Aforesaid non-exterior pin semiconductor packaging construction method, the degree of depth of those counterbores of wherein said adhesive body are between 0.05～0.2 millimeter (mm).
Aforesaid non-exterior pin semiconductor packaging construction method, wherein said this electrodeposited coating are to be selected to one of them of nickel gold, tin, NiPdAu, tin lead, silver, tin bismuth.
Aforesaid non-exterior pin semiconductor packaging construction method, it includes a plurality of soldered balls in addition, and it is to be engaged to those outer connection pads via this electrodeposited coating.
Aforesaid non-exterior pin semiconductor packaging construction method, wherein said those outer connection pads are to be multi-row staggered arrangement.
The object of the invention to solve the technical problems also realizes by the following technical solutions.The manufacture method of a kind of non-exterior pin semiconductor packaging construction that proposes according to the present invention, it may further comprise the steps: a lead frame is provided, and it has a plurality of pins and a plurality of outer connection pad that is connected by those pins; Carry out etching partially the first time step, to etch partially the lower surface of those pins; After etching partially for the first time, fix a wafer, and it is to be electrically connected to those pins; Form an adhesive body, it is this wafer of sealing and those pins; After this adhesive body forms, carry out etching partially the second time step, etching partially the lower surface of those outer connection pads, and make this adhesive body have a plurality of counterbores in alignment with those outer connection pads; And form an electrodeposited coating outside those on connection pad, and this electrodeposited coating is to be embedded in those counterbores.
The object of the invention to solve the technical problems also can be applied to the following technical measures to achieve further.
The manufacture method of aforesaid non-exterior pin semiconductor packaging construction, etch partially in the step the wherein said first time, etch partially the lower surface periphery of those outer connection pads simultaneously, make that in the aperture that etches partially those counterbores that form in the step for the second time be to be slightly less than connection pad outside those, to define the displaying area of those outer connection pads.
The manufacture method of aforesaid non-exterior pin semiconductor packaging construction, the wherein said lead frame that partly loses has a wafer holder in addition, with this wafer of adhering.
The manufacture method of aforesaid non-exterior pin semiconductor packaging construction, etch partially in the step the wherein said second time, etches partially the lower surface of this wafer holder simultaneously, so that this adhesive body has a sinker area in addition.
The manufacture method of aforesaid non-exterior pin semiconductor packaging construction, the wherein said lead frame that partly loses has a plurality of tie-rods in addition, and it connects this wafer holder, and is etching partially in the step for the first time, etch partially the lower surface of those tie-rods simultaneously, coat those tie-rods up and down for this adhesive body.
The manufacture method of aforesaid non-exterior pin semiconductor packaging construction, the degree of depth of those counterbores of wherein said adhesive body are between 0.05～0.2 millimeter (mm).
The manufacture method of aforesaid non-exterior pin semiconductor packaging construction, wherein said electrodeposited coating are to be selected to one of them of nickel gold, tin, NiPdAu, tin lead, silver, tin bismuth.
The manufacture method of aforesaid non-exterior pin semiconductor packaging construction, it includes in addition and a plurality of soldered balls is set to those counterbores, and it is engaged to those outer connection pads via this electrodeposited coating.
The manufacture method of aforesaid non-exterior pin semiconductor packaging construction, the length of wherein said those pins are for inconsistent, so that those outer connection pads are multi-row staggered arrangement.
The present invention compared with prior art has tangible advantage and beneficial effect.As known from the above, in order to achieve the above object,, mainly comprise half-etched conductor frame, a wafer, an adhesive body and an electrodeposited coating according to a kind of non-exterior pin semiconductor packaging construction of the present invention.This partly loses lead frame and has a plurality of pins and a plurality of outer connection pad that is connected by those pins.This wafer is to be electrically connected to those pins, and can be arranged at this and partly lose on the lead frame.This adhesive body is this wafer of sealing and those pins, and this adhesive body is to have a plurality of counterbores, and it is in alignment with those outer connection pads.This electrodeposited coating is to be formed at those outer connection pads and to be embedded in those counterbores, can prevent to carry or when storing this electrodeposited coating damage and have the effect of promoting the pin adhesion.
By technique scheme, non-exterior pin semiconductor packaging construction and manufacture method thereof that the present invention is plated in the sealing have following advantage at least:
1, the present invention is plated on non-exterior pin semiconductor packaging construction and the manufacture method thereof in the sealing, by it in the half-etched conductor frame that is provided, have a plurality of pins and a plurality of outer connection pad that is connected by those pins, and the adhesive body in order to sealing wafer and pin has a plurality of counterbores, it is in alignment with those outer connection pads, so that an electrodeposited coating that is formed at those outer connection pads can be embedded in those counterbores, and can under the benefit of low-cost and high heat conduction, displacement have known circuit substrate and welding resisting layer now, and can prevent that semiconductor packaging structure from damaging this electrodeposited coating when carrying or storing, and have the effect of promoting the adhesion of pin in adhesive body, thereby be suitable for practicality more.
2, the present invention is plated on non-exterior pin semiconductor packaging construction and the manufacture method thereof in the sealing, by the aperture of the counterbore of adhesive body wherein is to be slightly less than the outer connection pad that this partly loses lead frame, to define the displaying area of those outer connection pads, and can omit the member of existing known welding resisting layer and still possess anti-welding effect, and have the effect that to promote the adhesion of those outer connection pads in adhesive body, thereby be suitable for practicality more.
3, the present invention is plated on non-exterior pin semiconductor packaging construction and the manufacture method thereof in the sealing, by the processing procedure that etches partially that a lead frame is carried out twice, respectively before sticking crystalline substance with sealing after, can obtain the outer connection pad in the counterbore that the pin that can be sealed by adhesive body and surface be emerging in adhesive body, carry out a plating step again, make an electrodeposited coating be embedded in those counterbores, strengthen pin adhesion and the effect that prevents the electrodeposited coating damage and have, thereby be suitable for practicality more.
In sum, the present invention is relevant a kind of non-exterior pin semiconductor packaging construction and manufacture method thereof that is plated in the sealing, and this packaging structure mainly comprises half-etched conductor frame, a wafer, an adhesive body and an electrodeposited coating.This partly loses lead frame and has a plurality of pins and a plurality of outer connection pad that is connected by those pins, this adhesive body seals this wafer and those pins and has a plurality of counterbores, it is in alignment with those outer connection pads, can be embedded in those counterbores so that be formed at the electrodeposited coating of those outer connection pads, can be under the benefit of low-cost and high heat conduction known circuit substrate of displacement and welding resisting layer, and have and prevent that semiconductor packaging structure from damaging this electrodeposited coating and having the effect of promoting the adhesion of pin in adhesive body in carrying or when storing.In addition, comprise twice and etch partially the step that this partly loses lead frame in encapsulation procedure, wherein etching partially for the second time step is after this adhesive body forms and before this electrodeposited coating forms.The present invention has above-mentioned plurality of advantages and practical value, no matter it all has bigger improvement on product structure, manufacture method or function, obvious improvement is arranged technically, and produced handy and practical effect, and more existing non-exterior pin semiconductor packaging construction and manufacture method thereof have the outstanding effect of enhancement, thereby being suitable for practicality more, and having the extensive value of industry, really is a new and innovative, progressive, practical new design.
Above-mentioned explanation only is the general introduction of technical solution of the present invention, for can clearer understanding technological means of the present invention, and can be implemented according to the content of specification, and for above-mentioned and other purposes, feature and advantage of the present invention can be become apparent, below especially exemplified by preferred embodiment, and conjunction with figs., be described in detail as follows.
Description of drawings
Fig. 1 is according to first preferred embodiment of the present invention, a kind of schematic cross-section of non-exterior pin semiconductor packaging construction.
Fig. 2 is according to first preferred embodiment of the present invention, the schematic bottom view of this non-exterior pin semiconductor packaging construction.
Fig. 3 A to Fig. 3 G is according to first preferred embodiment of the present invention, the schematic cross-section of this non-exterior pin semiconductor packaging construction in processing procedure.
Fig. 4 is according to first preferred embodiment of the present invention, the employed schematic bottom view of partly losing lead frame of this non-exterior pin semiconductor packaging construction.
Fig. 5 is according to second preferred embodiment of the present invention, the schematic cross-section of another kind of non-exterior pin semiconductor packaging construction.
Fig. 6 is according to second preferred embodiment of the present invention, the schematic bottom view of this non-exterior pin semiconductor packaging construction before not receiving.
Fig. 7 is according to the 3rd preferred embodiment of the present invention, the schematic cross-section of another kind of non-exterior pin semiconductor packaging construction.
100: non-exterior pin semiconductor packaging construction 110: partly lose lead frame
111: pin 111A: lower surface
112: outer connection pad 112A: lower surface
113: wafer holder 114: moulding
115: tie-rod 120: wafer
121: weld pad 130: adhesive body
131: bottom surface 132: counterbore
133: sinker area 140: electrodeposited coating
150: bonding wire 200: non-exterior pin semiconductor packaging construction
210: partly lose lead frame 211: pin
212: outer connection pad 213: wafer holder
220: wafer 221: weld pad
230: adhesive body 231: bottom surface
232: counterbore 233: sinker area
240: electrodeposited coating 250: bonding wire
260: soldered ball 300: non-exterior pin semiconductor packaging construction
310: partly lose lead frame 311: pin
312: outer connection pad 313: wafer holder
320: wafer 321: weld pad
330: adhesive body 331: bottom surface
332: counterbore 340: electrodeposited coating
350: projection 361: sticking brilliant glue
362: separating ball
Embodiment
Reach technological means and the effect that predetermined goal of the invention is taked for further setting forth the present invention, below in conjunction with accompanying drawing and preferred embodiment, be plated on non-exterior pin semiconductor packaging construction and its embodiment of manufacture method, structure, manufacture method, step, feature and effect thereof in the sealing to what foundation the present invention proposed, describe in detail as after.
See also Figure 1 and Figure 2, Fig. 1 is that a kind of schematic cross-section of non-exterior pin semiconductor packaging construction, Fig. 2 are the schematic bottom view of this non-exterior pin semiconductor packaging construction according to first preferred embodiment of the present invention.Disclose a kind of electrodeposited coating according to first specific embodiment of the present invention and be embedded at the interior non-exterior pin semiconductor packaging construction of adhesive body.This non-exterior pin semiconductor packaging construction 100 mainly comprises half-etched conductor frame 110, a wafer 120, an adhesive body 130 and an electrodeposited coating 140.
This partly loses lead frame 110, has a plurality of pins 111 and a plurality of outer connection pad 112 that is connected by those pins 111, and its thickness can form embryo shape earlier through punching press or etching by a Copper Foil between 0.1～0.5 millimeter (mm); Wherein: the Lower Half of those pins 111 is to etch partially in the step first to be removed, and the Lower Half of those outer connection pads 112 is to etch partially in the step second to be removed (being detailed later).It is width greater than those pins 111 that those outer connection pads 112 can be square and its width, and can increase the area to outer engagement.In the present embodiment, this partly loses lead frame 110 and has rectangular without exception wafer holder 113 in addition, for this wafer 120 of adhesion.As shown in Figure 2, the length of those pins 111 can be different in size, can make those outer connection pads 112 be multi-row staggered arrangement, to increase configuration density.
This wafer 120, be to be electrically connected to those pins 111, and can be arranged at this and partly lose on the lead frame 110, for example be bonded on this wafer holder 113 with the back side of sticking brilliant material with this wafer 120, but in different embodiment, this wafer 120 also can be naked crystal formation attitude, and is temporary fixing with an adhesive tape in processing procedure.On an active surface of this wafer 120, then be formed with a plurality of weld pads 121, can utilize that existing electrical connecting element connects those weld pads and those pins 111 in bonding wire 150 that routing forms or the encapsulation field, reach the electric connection between those pins 111 of this wafer 120.
This adhesive body 130 is these wafers 120 and those pins 111 of sealing.In the present embodiment, this adhesive body 130 is to be formed and comprised the mixture of thermosetting resin and inorganic ceramic powder and be formed at this by pressing mold partly to lose on the lead frame 110.Because this adhesive body 130 can be thicker than this wafer 120, and the lower surface 111A of those pins 111 etched partially in advance, therefore can seal this wafer 120 and those pins 111.This adhesive body 130 has a plurality of counterbores 132, and it is by a bottom surface 131 past interior formation of this adhesive body 130.In a concrete framework, the degree of depth of those counterbores 132 of this adhesive body 130 is approximately between 0.05～0.2 millimeter (mm), does not partly lose the thickness of lead frame 110 but should not surpass this.Those counterbores 132 are in alignment with those outer connection pads 112, with the local of the lower surface 112A that appears those outer connection pads 112 or all.
This electrodeposited coating 140, be to be formed at those outer connection pads 112 and to be embedded in those counterbores 132, wherein the material of this electrodeposited coating 140 is to be selected to one of them of nickel gold, tin, NiPdAu, tin lead, silver, tin bismuth, should have function antirust and that externally weld easily, the electroplating thickness of this electrodeposited coating 140 should be preferable with the degree of depth less than those counterbores 132.
Therefore, when carrying or storing, this electrodeposited coating 140 can not damage and be easy to stack preservation at above-mentioned non-exterior pin semiconductor packaging construction 100.In addition, the upper and lower surface of those pins 111 and side are all coated by this adhesive body 130, promote the effect of those pins 111 at these adhesive body 130 internal bonds so have, and those pins 111 are not easy to peel off and come off in the thermal cycle that repeats.
Preferably, please consult Figure 1 and Figure 2 again, those counterbore 132 apertures of this adhesive body 130 are to be slightly less than those outer connection pads 112, to define the displaying area of those outer connection pads 112, promptly can be considered sealing and define pad (compound defined pad).In the present embodiment, the lower surface 112A periphery of those outer connection pads 112 is coated by this adhesive body 130, do not need the member of existing known welding resisting layer to possess anti-welding effect like that and still, and have the effect that to promote the adhesion of those outer connection pads 112 in adhesive body 130.In addition, this adhesive body 130 can have a sinker area 133 in addition, and it is the lower surface that the part appears this wafer holder 113, is beneficial to embedding bury type and forms the appear surface of this electrodeposited coating 140 in this wafer holder 113.
Seeing also shown in Fig. 3 A to Fig. 3 G, is according to first preferred embodiment of the present invention, the schematic cross-section of this non-exterior pin semiconductor packaging construction in processing procedure.The manufacture method of this non-exterior pin semiconductor packaging construction 100, the process step of its manufacture process mainly comprise in regular turn provides lead frame, step such as etches partially for the first time, sticking crystalline substance, sealing, the second time etch partially and electroplate.
At first, as shown in Figure 3A, utilize punching press or etching technique that one lead frame is provided, this lead frame each encapsulation unit in the matrix kenel is to have a plurality of pins 111 and a plurality of outer connection pad 112 that is connected by those pins 111, and those pins 111 etch partially all as yet with those outer connection pads 112.
And, carry out etching partially the first time step as Fig. 3 B and shown in Figure 4, to etch partially the lower surface 111A of those pins 111, make that the thickness attenuation of those pins 111 and its lower surface 111A are unsettled propradation.At this moment, those outer connection pads 112 still are connected to the moulding 114 that this lead frame 110 is positioned at Cutting Road by those pins that etch partially 111.Wherein when this lead frame 110 be to form by punching press, above-mentioned lead frame provide the step and the first time to etch partially step can to separate and carry out; When this lead frame 110 is to be formed by etching, then above-mentioned lead frame provides step and etches partially step for the first time and can finish simultaneously.In addition, this lead frame 110 is by a plurality of tie-rods 115 (tie bar), and above-mentioned wafer holder 113 is connected to those mouldings 114 (as shown in Figure 4).Preferably, etch partially the lower surface of those tie-rods 115 in the step simultaneously and the lower surface 112A periphery of connection pad 112 outside those for the first time etching partially, the upper and lower surface of those tie-rods 115 all can be coated by this adhesive body 130, and make that in the aperture that etches partially those counterbores 132 that form in the step for the second time be to be slightly less than connection pad 112 outside those, to define the displaying area of those outer connection pads 112.
Shown in Fig. 3 C, after etching partially for the first time, glue brilliant step.At least one wafer 120 is to be fixed on the corresponding wafer holder 113, and this partly loses lead frame 110 can be pasted on (figure does not draw) on the temporary adhesive tape in advance.
Afterwards, shown in Fig. 3 D, routing forms those bonding wires 150, makes those weld pads 121 of this wafer 120 be electrically connected to those pins 112.
Shown in Fig. 3 E, then, carry out a sealing step, can form this adhesive body 130 by compression molding techniques, it is this wafer 120 and those pins 111 of sealing, and makes this adhesive body 130 solidified formings.In this step, those outer connection pads 112 are with this wafer holder 113 and appear shape, and are copline with the bottom surface 131 of this adhesive body 130 normally.
Shown in Fig. 3 F, after this adhesive body 130 forms, carry out etching partially the second time step.Etch partially the recess lower surface 112A that obtains those outer connection pads 112 and the recess lower surface of this wafer holder 113, and it is a plurality of in alignment with the counterbore 132 of those outer connection pads 112 and the sinker area 133 of aiming at this wafer holder 113 that this adhesive body 130 is had.
Then, as Fig. 3 G, shown in Figure 4, because those outer connection pads 112 still are electrically connected to this moulding that partly loses lead frame 110 114 by those pins 111 with this wafer holder 113, so can use plating (electroplating) technology that this electrodeposited coating 140 is formed at the lower surface that appears lower surface 112A and this wafer holder 113 of those outer connection pads 112, and this electrodeposited coating 140 is to be embedded in those counterbores 132 and this sinker area 133.At last, carry out all single (sawing) steps, remove those frameworks 114, can obtain a plurality of non-exterior pin semiconductor packaging constructions as shown in Figure 1 100 that are separated from each other along Cutting Road.
In addition, do not limit to the external pulvilliform shape of half erosion lead frame in the present invention, and can further engage soldered ball, to make sphere grid array (BGA) encapsulation kenel.In the present invention's second specific embodiment, see also Fig. 5 and shown in Figure 6, Fig. 5 is that the schematic cross-section of another kind of non-exterior pin semiconductor packaging construction, Fig. 6 are the schematic bottom view of this non-exterior pin semiconductor packaging construction before not receiving according to second preferred embodiment of the present invention.This another kind non-exterior pin semiconductor packaging construction 200 comprises half-etched conductor frame 210, a wafer 220, an adhesive body 230 and an electrodeposited coating 240.
This partly loses lead frame 210, has a plurality of pins 211 and a plurality of outer connection pad 212 that is connected by those pins 211.In the present embodiment, those outer connection pads 212 be for circular and its diameter be width greater than those pins 211.
This wafer 220 is to be electrically connected to those pins 211 by a plurality of bonding wires 250, and can be arranged on this wafer holder 213 that partly loses lead frame 210.
This adhesive body 230 is these wafers 220 and those pins 211 of sealing, and the bottom surface 231 of this adhesive body 230 has a plurality of counterbore 232 and sinker area 233 in alignment with this wafer holder 213 in alignment with those outer connection pads 212.
This electrodeposited coating 240 can be formed at those outer connection pads 212 and this wafer holder 213, and be embedded in those counterbores 232 and this sinker area 233.Therefore, a plurality of soldered balls 260 can be engaged to those outer connection pads 212 via this electrodeposited coating 240, and the remaining space of those counterbores 232 can be filled up by those soldered balls 260, and can promote the steadiness of those soldered balls 260.
Seeing also shown in Figure 7ly, is according to the 3rd preferred embodiment of the present invention, the schematic cross-section of another kind of non-exterior pin semiconductor packaging construction.The another kind of non-exterior pin semiconductor packaging construction 300 that third embodiment of the invention discloses, it is to be the flip chip type attitude, mainly comprises half-etched conductor frame 310, a wafer 320, an adhesive body 330 and an electrodeposited coating 340.
This partly loses lead frame 310, has a plurality of pins 311 and a plurality of outer connection pad 312 that is connected by those pins 311.In the present embodiment, this partly loses lead frame 310 and has a wafer holder 313 in addition, for the active surface of this wafer 320 of adhesion.
This wafer 320 is that chip bonding is partly lost lead frame 310 to this, and a plurality of weld pads 321 of this wafer 320 are to be electrically connected to those pins 311 by plurality of bump 350.In the present embodiment, and can utilize the sticking brilliant glue 361 with separating ball 362 partly to lose this wafer holder 313 of lead frame 310 as for this with the active surface of this wafer 320 is bonding, in order to fix this wafer 320 and to define the reflow height of those projections 350.
This adhesive body 330 is these wafers 320 and those pins 311 of sealing.This adhesive body 330 has a plurality of counterbores 332, and it is a bottom surface 331 past interior formation the by this adhesive body 330.Those counterbores 332 are in alignment with those outer connection pads 312, with the local of the lower surface that appears those outer connection pads 312 or all.
This electrodeposited coating 340 is to be formed at those outer connection pads 312 and to be embedded in those counterbores 332.Therefore, this non-exterior pin semiconductor packaging construction 300 has when carrying or storing can not damage this electrodeposited coating 340, and is easy to stack the effect of preservation.In addition, the upper and lower surface of those pins 311 and side are all coated by this adhesive body 330, so have the effect of promoting those pin 311 adhesions, those pins 311 all are not easy to peel off to come off in the thermal cycle that repeats.
The above, it only is preferred embodiment of the present invention, be not that the present invention is done any pro forma restriction, though the present invention discloses as above with preferred embodiment, yet be not in order to limit the present invention, any those skilled in the art, in not breaking away from the technical solution of the present invention scope, when the method that can utilize above-mentioned announcement and technology contents are made a little change or be modified to the equivalent embodiment of equivalent variations, in every case be the content that does not break away from technical solution of the present invention, according to technical spirit of the present invention to any simple modification that above embodiment did, equivalent variations and modification all still belong in the scope of technical solution of the present invention.
Claims (18)
1. non-exterior pin semiconductor packaging construction is characterized in that it comprises:
Half-etched conductor frame, it has a plurality of pins and a plurality of outer connection pad that is connected by those pins;
One wafer, it is electrically connected to those pins;
One adhesive body, it seals this wafer and those pins, and this adhesive body has a plurality of counterbores, and it is in alignment with those outer connection pads; And
One electrodeposited coating, it is formed at those outer connection pads and is embedded in those counterbores.
2. non-exterior pin semiconductor packaging construction according to claim 1, the aperture that it is characterized in that those counterbores of wherein said adhesive body are to be slightly less than those outer connection pads, to define the displaying area of those outer connection pads.
3. non-exterior pin semiconductor packaging construction according to claim 1 is characterized in that the wherein said lead frame that partly loses has a wafer holder in addition, with this wafer of adhering.
4. non-exterior pin semiconductor packaging construction according to claim 3 is characterized in that wherein said adhesive body has a sinker area in addition, and it is the lower surface that the part appears this wafer holder, forms this electrodeposited coating in order to embedding bury type.
5. non-exterior pin semiconductor packaging construction according to claim 3 is characterized in that the wherein said lead frame that partly loses has a plurality of tie-rods in addition, and it connects this wafer holder and is coated up and down by this adhesive body.
6. non-exterior pin semiconductor packaging construction according to claim 1, the degree of depth that it is characterized in that those counterbores of wherein said adhesive body are between 0.05～0.2 millimeter.
7. non-exterior pin semiconductor packaging construction according to claim 1 is characterized in that wherein said this electrodeposited coating is to be selected to one of them of nickel gold, tin, NiPdAu, tin lead, silver, tin bismuth.
8. according to claim 1 or 7 described non-exterior pin semiconductor packaging constructions, it is characterized in that it includes a plurality of soldered balls in addition, it is to be engaged to those outer connection pads via this electrodeposited coating.
9. non-exterior pin semiconductor packaging construction according to claim 1 is characterized in that wherein said those outer connection pads are to be multi-row staggered arrangement.
10. the manufacture method of a non-exterior pin semiconductor packaging construction is characterized in that it may further comprise the steps:
One lead frame is provided, and it has a plurality of pins and a plurality of outer connection pad that is connected by those pins;
Carry out etching partially the first time step, to etch partially the lower surface of those pins;
After etching partially for the first time, fix a wafer, and it is to be electrically connected to those pins;
Form an adhesive body, it is this wafer of sealing and those pins;
After this adhesive body forms, carry out etching partially the second time step, etching partially the lower surface of those outer connection pads, and make this adhesive body have a plurality of counterbores in alignment with those outer connection pads; And
Form an electrodeposited coating outside those on connection pad, and this electrodeposited coating is to be embedded in those counterbores.
11. the manufacture method of non-exterior pin semiconductor packaging construction according to claim 10, it is characterized in that etch partially in the step the wherein said first time, etch partially the lower surface periphery of those outer connection pads simultaneously, make that in the aperture that etches partially those counterbores that form in the step for the second time be to be slightly less than connection pad outside those, to define the displaying area of those outer connection pads.
12. the manufacture method of non-exterior pin semiconductor packaging construction according to claim 10 is characterized in that the wherein said lead frame that partly loses has a wafer holder in addition, with this wafer of adhering.
13. the manufacture method of non-exterior pin semiconductor packaging construction according to claim 12 is characterized in that etching partially in the step the wherein said second time, etches partially the lower surface of this wafer holder simultaneously, so that this adhesive body has a sinker area in addition.
14. the manufacture method of non-exterior pin semiconductor packaging construction according to claim 12, it is characterized in that the wherein said lead frame that partly loses has a plurality of tie-rods in addition, it connects this wafer holder, and etching partially in the step for the first time, etch partially the lower surface of those tie-rods simultaneously, coat those tie-rods up and down for this adhesive body.
15. the manufacture method of non-exterior pin semiconductor packaging construction according to claim 10, the degree of depth that it is characterized in that those counterbores of wherein said adhesive body are between 0.05～0.2 millimeter.
16. the manufacture method of non-exterior pin semiconductor packaging construction according to claim 10 is characterized in that wherein said electrodeposited coating is to be selected to nickel gold, tin, NiPdAu, one of them of tin lead, silver, tin bismuth.
17. according to the manufacture method of claim 10 or 16 described non-exterior pin semiconductor packaging constructions, it is characterized in that it includes in addition: a plurality of soldered balls are set to those counterbores, it is engaged to those outer connection pads via this electrodeposited coating.
18. the manufacture method of non-exterior pin semiconductor packaging construction according to claim 10, the length that it is characterized in that wherein said those pins are for inconsistent, so that those outer connection pads are multi-row staggered arrangement.
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| CNB2006101114772A CN100485917C (en) | 2006-08-22 | 2006-08-22 | Method for manufacturing non-exterior pin semiconductor packaging construction plated in sealing glue |
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| CNB2006101114772A CN100485917C (en) | 2006-08-22 | 2006-08-22 | Method for manufacturing non-exterior pin semiconductor packaging construction plated in sealing glue |
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