CN101126147B - Ion beam treating dielectric surface method and device for applying the same - Google Patents
Ion beam treating dielectric surface method and device for applying the same Download PDFInfo
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- CN101126147B CN101126147B CN 200710107941 CN200710107941A CN101126147B CN 101126147 B CN101126147 B CN 101126147B CN 200710107941 CN200710107941 CN 200710107941 CN 200710107941 A CN200710107941 A CN 200710107941A CN 101126147 B CN101126147 B CN 101126147B
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Abstract
The method of the invention generates electron flow using plasma cathodic discharge and tunnel type magnetic field. A part of magnetic flux of the tunnel type magnetic field at the same time passes through the durface of the cathode and the dielectric surface to be treated and the cathode is manufactured by graphite and/or boron. The component of working gas contains 10-100% of oxygen. The said method uses cathodic discharge device wherein the cathode is manufactured by graphite and/or boron as electron source and the magnetic system is mounted under the surface of cathode ans used to generate the magnetic flux of the tunnel type at the surface of the cathode. In addition, the cathodic discharge device is mounted opposite to the dielectric surface and ouput hole of electron source, in this way the area usder action of ion flow on the surface to be treated and the area, in which the magnetic flux is jointed with the said area, form overlapping area.
Description
Technical field
The present invention relates to for clean, activate, modification, catalysis, ion implantation and etched surfaces, with the field on ionic current vacuum-treat surface.It is used for before the coated film coating with dielectric surface on electric charge, and use during the film coating on manufacturing indicating meter and glass for building purposes.
Background technology
The device that becomes known for handling material surface is with in the ionic current and electric charge.This device comprises ion source, electron source and pending substrate surface.All these devices are characterised in that and use incandescent cathode as electron source.
The main drawback of such scheme is that the work-ing life of negative electrode is short.
In addition, the negative electrode that this scheme is used is the heat-flash source of radiation, and surface and heating that its influence is pending should the surfaces.The cathode material evaporation causes pending surperficial contaminated [1,2,3] when being heated.
Another kind of knownly handle the method and apparatus of substrate with ionic current, wherein arc-over as in the electron source [4] of electric charge.
But this technical scheme has following shortcoming:
is low with the operational efficiency that the energy that consumes is compared electron source;
The dealing with complicated [4] on
non-linear shape surface.
Another kind of known method and apparatus through the electric charge that produces on the pending surface of Ion Beam Treatment and neutralization wherein uses the SHF electric discharge device as electron source.
But technique scheme has a series of deficiency in essence, promptly cost height, complex design, efficient low, only be applicable to and handle the small area surface, and be designed for low strength ionic current operation [5].
The invention of immediate method and the device of implementing this method is to handle substrate surface through the ion source of working simultaneously with magnetron.The essence of this patent is magnetron discharge as electron source, and this requires to operate simultaneously ion source and is adjusted at the electromotive force [6] that forms on the substrate surface.
Yet this scheme receives big quantitative limitation.
The first, because pending surface is by cathode sputtering product severe contamination, this scheme only is used for the assistant coating coating procedure, and promptly this device can not effectively be implemented the cleaning or the etching of substrate surface.
The second, the charge neutralization process on substrate is not optimum, and needs powerful cathodic discharge.
Summary of the invention
Target of the present invention is to eliminate above-mentioned all shortcomings, and the dielectric surface of guaranteeing Ion Beam Treatment different size type and shape, and is little of being used for the instrument manufacturing, greatly to being used to build building structure, and the geometric jacquard patterning unit surface of straight line and curve.
Method through the ion beam treating dielectric surface of asking for protection has realized the target that sets; This method comprises directed ionic current of formation and targeted electronic stream; These streams are acted on the pending dielectric surface, and in dielectric surface on the positive charge that occurs; Utilize plasma cathode discharge and tunnel like magnetic field to form stream of electrons; And a part of magneticflow in tunnel like magnetic field passes the surface of negative electrode and pending dielectric surface simultaneously, and negative electrode is by graphite or boron manufacturing.
In the method that is proposed; Passing the surface of negative electrode and a part of tunnel like magnetic field of pending dielectric surface simultaneously is at least 20% of total magnetic flux, and the part in the zone of ionic current effect on pending surface and tunnel like magnetic field and this surface cross regional overlapped.
In addition, be adjusted in the special scope of 20-100 milli in the intensity of the parallel component in tunnel like magnetic field on the cathode surface, and the material with low electron work functon of cathodic synthesis thing doping 0.1-5.0%, for example one of Cs, Ba, La series.
Utilize the controlled producer of working gas ionic to form directed ionic current.Closed type electronic drift accelerator is as above-mentioned producer, and the working gas component comprises oxygen, and content is 10-100%.
The device of the method that is used to implement to ask for protection also is to realizing aforesaid method.
The ion-beam treatment method that the present invention proposes is implemented as follows.
Dielectric medium is placed in the vacuum chamber, and with the directed charged particle stream of this mode, promptly ion and stream of electrons will act on dielectric pending surface.
Before beginning to handle, extracting air from vacuum chamber, pressure drops to 5 * 10
-4Handkerchief-10
-3The boundary of handkerchief.In vacuum chamber, present the mixture of oxygen or itself and other gas subsequently, and the per-cent of oxygen is 10-100% in mixture.
When operating pressure reaches 5 * 10
-2Handkerchief-10
-1During handkerchief, form directed ionic current and targeted electronic stream.
Apply positive potential through anode and form first particle flux, apply negative potential through negative electrode and form second particle flux to cathode discharge device to the working gas ion generator.
At this, handle dielectric surface with ionic current and stream of electrons simultaneously, thereby in guaranteeing with dielectric surface on the positive charge that occurs.
In order to improve processing efficiency, the scope in the tunnel like magnetic field of confirming to occur in the nearly surf zone of negative electrode in cathode discharge device, the part of magneticflow can be passed the surface of negative electrode and pending dielectric surface simultaneously by this way.
At this, the electronics in the cathodic discharge zone moves along the magnetic field line that points to velocity vector.
As calculating with shown in the pilot study, responsible electronic delivery should be passed cathode surface and pending dielectric surface simultaneously at least 20% of the total magnetic flux of dielectric surface, this point is essential.
At this, the space overlap in the zone that the hand-deliver of the part in the zone of ionic current effect and tunnel like magnetic field and pending list converges on pending surface has further strengthened neutralization.
Plasma cathode discharge magnetic field not only should be incident upon vector space, and it should be in the special scope of 20-100 milli at the absolute value on the cathode surface.This be reinforcing yin essence utmost point discharge under low pressure existence condition and with the condition of ion source compatibility operation.
At this, the plasma body of high density provides sizable stream of electrons.
Device according to the method different technologies that is proposed can be used as ion source, but from the engineering and the viewpoint of technology optimum be closed type electronic drift accelerator.
Use accelerator can form heteroid ionic fluid, therefore can carry out straight and Ion Beam Treatment curved surface.In addition, this accelerator can form long linear ionic fluid, thereby allows to handle large-sized surface.
In order to minimize pollution, be necessary in the working gas component, to introduce oxygen to pending dielectric surface.
When using the plasma cathode discharge, the cathode material evaporation, thus cause sputter product pollution dielectric surface.
But when using graphite or boron as cathode material, and oxygen or its mixture be during as working gas, volatile compound (CO, CO that cathode sputtering produces
2, B
2O
3, BO
2) can not condense on the pending surface, and can from vacuum chamber, remove through vacuum pump.In addition, these materials are characterised in that sputtering yield is low, and the scheme that is therefore proposed will drop to zero to the pollution of pending dielectric surface.
Have the element of low electron work functon if mixed in the cathode material component, like Cs, Ba, La, the neutralization on dielectric surface is further strengthened.
In this case, stream of electrons density significantly improves, thereby can under less cathodic discharge power, work.At this, the amount of confirming these additives through pilot study is in the scope of 0.1-5.0%.Because these materials and oxygen form nonvolatile compound, can cause the pollution on pending surface above this scope so add concentration.
Total exposure duration and the processing mode of pending product in the treatment zone stop of ion and stream of electrons depended in the completion of dielectric surface Ion Beam Treatment process.
When in through-type device, implementing this treating processes,, will be in place by next article of Ion Beam Treatment when the article of finishing dealing with should be shifted into the next position.
When finishing dealing with, vacuum chamber is full of air, and pressure returns to atmospheric pressure, the article of reloading.
Description of drawings
Fig. 1 is a schematic diagram of implementing the device of ion beam treating dielectric surface.
Fig. 2 is the total figure that implements the device of ion beam treating dielectric surface.
Fig. 3 is a device layout of handling straight dielectric surface.
Fig. 4 is another layout of handling the device of straight dielectric surface.
Fig. 5 is another layout of handling the device of straight dielectric surface.
Fig. 6 is another layout of handling the device of straight dielectric surface.
Fig. 7 is a device layout of handling crooked dielectric surface.
Fig. 8 is another layout of handling the device of crooked dielectric surface.
Fig. 9 is another layout of handling the device of crooked dielectric surface.
Figure 10 is another layout of handling the device of crooked dielectric surface.
Embodiment
The device of having represented to Fig. 1 principle the method that enforcement is asked for protection, wherein: the 1st, pending surface, the 2nd, ion source, the 3rd, comprise the negative electrode 4 of cathode discharge device and the electron source of magnetic system 5, the 6th, the magneticflow of the tunnel like that magnetic system 5 produces.
Product (for example, being of a size of 1260 * 940 millimeters sheet glass) with pending surface 1 is placed on to transport sends into the Ion Beam Treatment vacuum chamber on the support, the device 2 and 3 that wherein forms ion and stream of electrons respectively is placed on the place ahead on pending surface 1.
Utilize vacuum pump extracting air from vacuum chamber, pressure drops to 5 * 10
-4Handkerchief-10
-3The boundary of handkerchief.The ratio of presenting is the oxygen of 70%:30% and the mixed gas of argon gas in vacuum chamber subsequently.
Apply 4.2 kilovolts positive potential to the anode of ion source 2.
When the igniting discharge, forming total current is the banding pattern ionic fluid of 1.4 peaces.Simultaneously, the negative electrode 4 to electron source 3 applies the negative potential with respect to 550 volts on ground.This electromotive force causes the plasma discharge of 5.5 peaces.In the tunnel like magnetic field 6 that this field system 5 produces cathode discharge device.
Handle the surface 1 of sheet glass subsequently simultaneously with ion and stream of electrons, the positive charge that occurs is gone up on its surface of guaranteeing to neutralize.
Be set at 1.5 meters/minute at this sheet glass 1 with respect to the translational speed of gas discharge device 2 and 3.
The scope in the tunnel like magnetic field of confirming to produce on the surface of negative electrode 4 in cathode discharge device 6, thus the part of magneticflow (for example 25%) is passed the surface of negative electrode 4 and the surface 1 of pending sheet glass simultaneously.At this, the electronics that occurs in the cathodic discharge zone moves along the magnetic field line that points to its velocity vector.
Per-cent (25%) through testing the magneticflow 6 that definite magnetic system 5 produces has promoted to realize neutralization efficiently; Because it has guaranteed to transport electronics to dielectric surperficial 1 (being sheet glass under this situation), and the magneticflow 6 of having guaranteed above-mentioned part is handled the surface of negative electrode 4 and the lap of pending glass surface 1 simultaneously.
At this, the space overlap in the zone that the part of the zone of ionic current effect and tunnel like magneticflow 6 and this surface cross on pending surface 1 has further been strengthened neutralization.
The magneticstrength of plasma cathode discharge not only is incident upon vector space, and its lip-deep absolute value at negative electrode 4 equals 40 milli spies in this specific embodiment.
The plasma body of high density provides the stream of electrons of current density up to 10 milliamperes/square centimeter.At this, closed type electronic drift accelerator is as ion source 2, and it can form heteroid ionic fluid, is used to handle straight and dielectric surface bending, and forms long rectilinear ionic fluid and be used to handle large-sized article.
In order to minimize when using the plasma cathode discharge on the surface 1 at sheet glass because the pollution that degradation production condenses and causes and cause is introduced oxygen in the working gas component.In this specific embodiment, the per-cent of oxygen is 70%.
In the process of sputter cathode 4, be used for the material (being graphite in this embodiment) of negative electrode 4 and form volatile Compound C O as the oxygen of working gas
2, it can not condense on the pending surface, but utilizes vacuum pump from case, to remove.
In addition, the characteristic of this material (graphite) is that sputtering yield is low, therefore will in fact reduce to zero to the pollution of pending glass pane surface 1.
The element of low work function if cathode material has mixed, like Cs, the neutralization on pending glass surface 1 is further strengthened.
In this case, stream of electrons density improves twice, thereby can be with lower cathodic discharge power work.Confirm that in this test the amount of additive is 3%.
The completion of ion beam treating dielectric surface process is confirmed by total exposure duration and processing mode that pending product stops in the treatment zone of ion and stream of electrons, is 2.5 minutes in this specific embodiment.
When in through-type device, implementing treating processes,, will be in place by next article of Ion Beam Treatment when the article of finishing dealing with should be shifted into the next position.
When finishing dealing with, vacuum chamber is full of air, and pressure returns to atmospheric pressure, the article of reloading.
The method of the ion beam treating dielectric surface of asking for protection can:
carries out Ion Beam Treatment to the dielectric surface of different size type and shape; Little of being used for the instrument manufacturing, big to being used to build building structure;
guarantees the efficient operation of ion and stream of electrons with respect to the energy that consumes;
In fact the pollution that
will cause dielectric surface owing to deposition sputter product on above-mentioned surface in the process on Ion Beam Treatment surface reduces to zero.
The device that the present invention proposes is used to carry out the method for above-mentioned ion beam treating dielectric surface, is different from the known devices of similar applications significantly.
Be used to implement the device of the method for ion beam treating dielectric surface, all shortcomings in the device of the similar purposes that its target is enumerated more than being to eliminate [1,2,3,4,5,6].
The device of the method for the target of setting through being used to implement ion beam treating dielectric surface is realized; It comprises inner vacuum chamber, working gas ion source, the electron source of placing dielectric surface, is used to produce the magnetic system of the magneticflow that distributes with respect to pending dielectric surface; The cathode discharge device that negative electrode is made by graphite and/or boron is as electron source, and magnetic system is installed in and is used on cathode surface, producing tunnel like magneticflow under the cathode surface; And, lay cathode discharge device with respect to dielectric surface and ionogenic delivery outlet, the zone that crosses with the zone of this mode ionic current effect on pending surface and magneticflow and this surface forms overlapped zone.
Comprise at least 20% of magneticflow that magnetic system produces in this overlapped zone.In the intensity of the parallel component of tunnel like magneticflow on the cathode surface in the special scope of 20-100 milli.
The weight percent that the cathode material of cathode discharge device is pressed 0.1-5.0% mixes from element and/or its compound of Cs, Ba, La series, and closed type electronic drift accelerator is as the working gas ion source.
At this, pending dielectric surface is straight or crooked geometrical shape.
Abreast or with the pending relatively surperficial angled delivery outlet of laying ion beam source, form the angle of 0-90 degree between the delivery outlet of ion beam source and the pending dielectric surface.
In addition, abreast or with the pending relatively surperficial angled cathode surface of laying.Between this cathode surface and pending dielectric surface, form the angle of 0-90 degree.
Fig. 2 is the total figure of device that is used to implement the method for ion beam treating dielectric surface, wherein: the 1st, pending dielectric surface, the 2nd, ion source, the 3rd, comprise the negative electrode 4 of cathode discharge device and the electron source of magnetic system 5, the 6th, tunnel like magneticflow.
The device running that is used to implement this method as follows.
Product (for example, being of a size of 630 millimeters * 470 millimeters glass substrate) is placed into and transports on the support, and is placed in the vacuum chamber, thereby will be positioned at before ion source 2 and the electron source 3 that comprises negative electrode 4 and magnetic system 5 with the pending dielectric surface 1 of this mode.At the negative electrode 4 of this electron source 3 by graphite and/or boron manufacturing.
The magnetic system 5 of electron source 3 is installed under the surface of negative electrode 4, and produces tunnel like magneticflow 6 in its surface.Lay cathode discharge device at this delivery outlet with respect to dielectric surface 1 and ion source 2, the zone that crosses with the zone of this mode ionic current effect on pending surface 1 and magneticflow 6 and this surface forms overlapped zone.Overlapped zone comprises at least 40% of tunnel like magneticflow 6 that magnetic system 5 produces.
The intensity of the parallel component of tunnel like magneticflow 6 is that 65 millis are special on the surface of negative electrode 4.Closed type electronic drift accelerator is as ion source 2.
In order to carry out Ion Beam Treatment, utilize vacuum pump extracting air from vacuum chamber, residue pressure drops to 5 * 10
-4Handkerchief.
To ion source 2 ratios of presenting is the oxygen of 90%:10% and the mixed gas of argon gas, and the operating pressure in the case reaches 6.0 * 10
-2Handkerchief.Anode to ion source 2 applies the positive potential with respect to 4.0 kilovolts on ground, and forms the ionic fluid of total current 0.9 peace.
Simultaneously, the negative electrode 4 to electron source 3 applies the negative potential with respect to 500 volts on ground, the plasma discharge of its generation 1.8 peaces.
Handle glass surface with ionic current and stream of electrons simultaneously subsequently; Through the charge neutralization degree on the probe monitoring dielectric surface 1 that is placed on treatment zone.
Glass substrate is 1.5 meters/minute with respect to the translational speed of gas discharge device, and the treatment time is 40 seconds, and is as shown in Figure 2.
When accomplishing neutralizing treatment, vacuum chamber is full of air, and pressure reaches a normal atmosphere, the article of reloading.
Fig. 3-the 10th, the different layouts that pending dielectric surface 1, ion source 2, electron source 3 are arranged each other, electron source 3 comprise the negative electrode 4 and the magnetic system 5 that forms tunnel like magneticflow 6 of cathode discharge device.
Fig. 3-the 6th, the layout of the straight dielectric surface of processing.
Fig. 3 is a layout, and wherein ion source 2 is placed in the electron source 3 that surrounds it, and the magnetic system 5 of the surface of the delivery outlet of ion source 2 and negative electrode 4 and formation tunnel like magneticflow 6 is parallel to pending dielectric surface 1 and lays.
Fig. 4 is a layout, and wherein electron source 3 is placed in the ion source 2 that surrounds it, lays the ion source hole at a certain angle with respect to pending dielectric surface 1, is parallel to surface and magnetic system 5 that negative electrode 4 is placed on this surface.
Fig. 5 is a layout, and wherein ion source 2 is placed in the electron source 3 that surrounds it; In this hole of placing ion source 2 at a certain angle with respect to pending dielectric surface 1, the surface and the magnetic system 5 of the negative electrode 4 of electron source 3 are parallel to pending dielectric surface 1.
Fig. 6 is a layout, and wherein ion source 2 is placed on the inside and the below of electron source 3 simultaneously, and electron source 3 comprises the negative electrode 4 and the magnetic system 5 that forms tunnel like magneticflow 6 of cathode discharge device.
At this, be parallel to the hole that pending dielectric surface 1 is placed ion source 2, the angle between the surface of negative electrode 4 and the pending dielectric surface 1 is 90 degree.
Fig. 7-the 10th, the scheme of the crooked dielectric surface of processing.
Fig. 7 is a layout, and wherein dielectric cylindrical outer surface 1 is surrounded by ion source 2 and electron source 3, and the hole of ion source 2 is parallel to pending dielectric surface 1 with the surface and the magnetic system 5 of the negative electrode 4 of forming electron source 3.
Fig. 8 is a layout; Wherein dielectric cylindrical outer surface 1 is surrounded by ion source 2 and electron source 3; But place with certain angle pending dielectric surface 1 in the hole of ion source 2, and the surface of negative electrode 4 and magnetic system 5 are parallel to pending dielectric surface 1.
Fig. 9 is a layout, and wherein dielectric cylindrical form interior surface is pending surface.Among this ion source 2 and electron source 3 are positioned at internal surface, and the surface of the hole of ion source 2 and negative electrode 4 and magnetic system 5 are parallel to pending dielectric surface 1.
Figure 10 is a layout; Wherein dielectric cylindrical form interior surface 1 also is to be handled with electron source 3 by the ion source 2 that is positioned at wherein; But place pending dielectric surface 1 at a certain angle in the hole of ion source 2, and the surface of the negative electrode 4 of cathode discharge device and magnetic system 5 are parallel to pending dielectric surface 1.
The operation logic of the device of its layout shown in Fig. 3-10 is similar to above-mentioned embodiment shown in Figure 2.Difference relates to layout dimension and the coating efficiency thereof in the practical solutions.
On the device that parts as treatment facility propose, area for being used to show the surface of the glass substrate of product, square 2322 centimetres (540 * 430 millimeters) is carried out Ion Beam Treatment.
Before the method for using magnetron sputtering pottery ITO target applies transparent conducting coating, carry out the Ion Beam Treatment of glass surface at once.
The prerequisite that obtains zero defect film ITO coating is the lip-deep electric charge that when carrying out the ionic fluid cleaning, neutralizes fully.
Otherwise charged surface will attract micropartical from the gas ions of opposite polarity.These sizes are the origin causes of formation of defective when applying ito thin film (perforation, hole, little coarse etc.) from the micropartical of 0.1-10 micron.
In order to eliminate or minimize above-mentioned defective, be optimized according to the operational mode of follow-up surface deficiency analysis to device.
The specific embodiment that device is used
For the process of the Ion Beam Treatment of carrying out sheet glass, utilize cryogenic vacuum pumps from the vacuum chamber extracting air, residue pressure drop to 5.5 * 10
-4Handkerchief.
Present purity oxygen to ion source 2, as shown in Figure 2; Operating pressure with in the rear cabinet reaches 8.0 * 10
-2Handkerchief.
Anode to ion source 2 applies the positive potential with respect to 4.2 kilovolts on ground, and forms the ionic fluid of total current 0.8 peace.
When the negative electrode that comprises cathode discharge device 4 was closed with the electron source 3 of the magnetic system 5 that forms tunnel like magneticflow 6, probe potential was positive 390 volts.
When the negative electrode 4 to electron source 3 applies the negative potential with respect to 500 volts on ground, under total use power of 1000 watts, form the plasma discharge of 2.0 peaces.Probe potential becomes negative 35 volts subsequently.
Then, sheet glass is transported to the position at magnetron place, applies the ito thin film of 0.15 micron thick there.After vacuum chamber is removed the article of having handled on surface 1, use the size of the defective of microscope on the regional analysis surface 1 of dark.
In this specific embodiment, the overall dimension of defective is no more than the 0.2-0.3 micron.If (only do not use the Ion Beam Treatment article with the article surface electric charge, then the size of defective reaches the 5-10 micron, and the quantity of defective manys 5 times than use when the device that this proposed.)
In order to carry out the processing of ionic fluid cleaning, utilize cryogenic vacuum pumps from the vacuum chamber extracting air, residue pressure drop to 5.5 * 10
-4Handkerchief.
Present purity oxygen to ion source 2, as shown in Figure 3, reach 8.0 * 10 with the operating pressure in the rear cabinet
-2Handkerchief.Anode to ion source 2 applies the positive potential with respect to 4.2 kilovolts on ground, and forms the ionic fluid of total current 0.8 peace.
When the negative electrode that comprises cathode discharge device 4 was closed with the electron source 3 of the magnetic system 5 that forms tunnel like magneticflow 6, probe potential was positive 390 volts.
When the negative electrode 4 to electron source 3 applies the negative potential with respect to 500 volts on ground, under total use power of 500 watts, form the plasma discharge of 1.0 peaces.Probe potential becomes negative 5 volts subsequently.
Then, sheet glass is transported to the position at magnetron place, applies the ito thin film of 0.15 micron thick there.After vacuum chamber is removed the article of having handled on surface 1, the size of the defective that the use microscope occurs on the treat surface 1 of the regional analysis article of dark.The overall dimension of analyzing display defect is no more than the 0.1-0.2 micron.
Therefore, when applying the ITO coating, the controllability of the charge value from dielectric surface and the viewpoint that the film coating defective reduces the process that the surface is further handled are to installing the high-level efficiency of general this device of analysis revealed that moves.
Because this device allows to implement the embodiment scheme of different geometries, so consider the structure of the function of device based on the source optimization device of selected usefulness.
Important a bit is that the structure that the present invention proposes allows the device of the type to be designed to the collinear geometrical shape, thereby can handle large-sized part.
The method of ion beam treating dielectric surface and the device of implementing this method are unique with general, its can:
guarantees the high quality on Ion Beam Treatment surface;
The long life that
guarantees negative electrode;
The device that
guarantees to implement this method is simple;
Method of asking for protection and the device of implementing this method can be applicable to industry, and meet current state of the art in the field of vacuum-treat dielectric surface; It can be used under the current working condition, and simple when the cleaning of the neutralizing treatment of implementing electric charge and pending dielectric surface.
Open source
1, No. the 4731540th, USP, and H01J disclosed in 37/30,1988 year 03 month 15 days;
2, No. the 5136171st, USP, and H01J disclosed in 37/317,1992 year 08 month 04 day;
3, No. the 6724160th, USP, and H01J disclosed in 23/00,2004 year 04 month 20 days;
4, No. the 6313428th, USP, B23 К 10/00, and November 06 calendar year 2001 is open;
5, No. the 5576538th, USP, and H05J H is open on November 19th, 3/00,1996;
6, No. the 6454910th, USP, and C23C disclosed in 14/34,2002 year 09 month 24 days.
Claims (18)
1. handle the method for dielectric surface; Comprise: form directed ionic current and targeted electronic stream; It is acted on the pending dielectric surface and in dielectric surface on the positive charge that occurs; It is characterized in that, utilize plasma cathode discharge and tunnel like magnetic field to form stream of electrons, and a part of magneticflow in tunnel like magnetic field passes cathode surface and pending dielectric surface simultaneously; What the part in the zone of ionic current effect and tunnel like magnetic field and this surface crossed on pending surface is regional overlapped, and said negative electrode is by graphite or boron manufacturing.
2. method according to claim 1, the tunnel like magnetic field that it is characterized in that passing simultaneously cathode surface and pending dielectric surface is at least 20% of total magnetic flux.
3. method according to claim 2 is characterized in that the intensity of the parallel component in tunnel like magnetic field on cathode surface is adjusted in the special scope of 20-100 milli.
4. according to arbitrary described method among the claim 1-3, the element impurity that one of it is characterized in that in the said negative electrode with the doped in concentrations profiled of weight percent 0.1-5.0% comprising among Cs, Ba, the La.
5. method according to claim 1 is characterized in that utilizing controlled working gas ion generator to form directed ionic current.
6. method according to claim 5 is characterized in that closed type electronic drift accelerator is as the working gas ion generator.
7. according to claim 5 or 6 described methods, the component that it is characterized in that working gas comprises the oxygen of 10-100%.
8. be used to handle the device of dielectric surface; Comprise: wherein lay vacuum chamber, working gas ion source, the electron source of dielectric surface and be used to produce magnetic system with respect to the magneticflow of pending dielectric surface distribution; It is characterized in that cathode discharge device that negative electrode made by graphite and/or boron as electron source, and magnetic system is installed in and is used on cathode surface, producing tunnel like magneticflow under the cathode surface; Cathode discharge device is laid with respect to dielectric surface and ionogenic delivery outlet, makes zone and the magneticflow of ionic current effect on pending surface and the zone that this surface crosses form overlapped zone.
9. device according to claim 8 is characterized in that at least 20% of magneticflow that overlapped zone comprises that magnetic system produces.
10. according to Claim 8 or 9 described devices, it is characterized in that intensity at the parallel component of tunnel like magneticflow on the cathode surface is in the special scope of 20-100 milli.
11. device according to claim 8 is characterized in that cathode material is by one of element among the weight percent doping Cs of 0.1-5.0%, Ba, the La and/or its compound.
12. device according to claim 8 is characterized in that closed type electronic drift accelerator is as the working gas ion source.
13. device according to claim 8 is characterized in that pending dielectric surface is straight geometrical shape.
14. device according to claim 8 is characterized in that pending dielectric surface is crooked geometrical shape.
15. according to Claim 8 or 12 described devices, it is characterized in that being parallel to pending dielectric surface or lay ionogenic delivery outlet with pending dielectric surface is angled.
16. device according to claim 15 is characterized in that angle between ionogenic delivery outlet and the pending dielectric surface is at the 0-90 degree.
17. device according to claim 8, it is characterized in that being parallel to pending dielectric surface or with the angled cathode surface of laying of pending dielectric surface.
18. device according to claim 17 is characterized in that angle between cathode surface and the pending dielectric surface is at the 0-90 degree.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| EA200601832A EA200601832A1 (en) | 2006-08-16 | 2006-08-16 | METHOD OF ION TREATMENT OF SURFACE DIELECTRICS AND DEVICE FOR IMPLEMENTATION OF METHOD |
| EA200601832 | 2006-08-16 |
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| Publication Number | Publication Date |
|---|---|
| CN101126147A CN101126147A (en) | 2008-02-20 |
| CN101126147B true CN101126147B (en) | 2012-12-05 |
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| CN 200710107941 Expired - Fee Related CN101126147B (en) | 2006-08-16 | 2007-05-18 | Ion beam treating dielectric surface method and device for applying the same |
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| JP (1) | JP5241169B2 (en) |
| CN (1) | CN101126147B (en) |
| EA (1) | EA200601832A1 (en) |
| TW (1) | TWI419193B (en) |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN102751154A (en) * | 2011-04-22 | 2012-10-24 | 上海凯世通半导体有限公司 | Real-time detection and control device for ion implantation |
| GB201216138D0 (en) * | 2012-09-11 | 2012-10-24 | Gencoa Ltd | Plasma source |
| RU170626U1 (en) * | 2016-10-31 | 2017-05-03 | Федеральное государственное бюджетное образовательное учреждение высшего образования "Томский государственный университет систем управления и радиоэлектроники" (ТУСУР) | Installation of local ion etching of dielectric surfaces |
| CN109003940A (en) * | 2018-07-18 | 2018-12-14 | 深圳市华星光电技术有限公司 | Tft array substrate and preparation method thereof |
| KR20210074326A (en) * | 2019-01-30 | 2021-06-21 | 어플라이드 머티어리얼스, 인코포레이티드 | A method for cleaning a vacuum system, a method for vacuum processing of a substrate, and an apparatus for vacuum processing a substrate |
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| US6454910B1 (en) * | 2001-09-21 | 2002-09-24 | Kaufman & Robinson, Inc. | Ion-assisted magnetron deposition |
| JP3680274B2 (en) * | 2002-03-27 | 2005-08-10 | 住友イートンノバ株式会社 | Ion beam charge neutralization apparatus and method |
| US6740894B1 (en) * | 2003-02-21 | 2004-05-25 | Axcelis Technologies, Inc. | Adjustable implantation angle workpiece support structure for an ion beam implanter utilizing a linear scan motor |
| FR2856677B1 (en) * | 2003-06-27 | 2006-12-01 | Saint Gobain | SUBSTRATE COATED WITH A DIELECTRIC LAYER AND METHOD FOR MANUFACTURING THE SAME |
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2006
- 2006-08-16 EA EA200601832A patent/EA200601832A1/en not_active IP Right Cessation
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2007
- 2007-05-18 CN CN 200710107941 patent/CN101126147B/en not_active Expired - Fee Related
- 2007-05-18 TW TW96117921A patent/TWI419193B/en not_active IP Right Cessation
- 2007-08-15 JP JP2007211954A patent/JP5241169B2/en not_active Expired - Fee Related
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| US5136171A (en) * | 1990-03-02 | 1992-08-04 | Varian Associates, Inc. | Charge neutralization apparatus for ion implantation system |
| US5576538A (en) * | 1992-02-21 | 1996-11-19 | Hitachi, Ltd. | Apparatus and method for ion beam neutralization |
| CN1295628A (en) * | 1998-03-31 | 2001-05-16 | 根特大学 | Method and apparatus for deposition of biaxially textured coatings |
| US6313428B1 (en) * | 1999-10-12 | 2001-11-06 | Advanced Ion Beam Technology, Inc. | Apparatus and method for reducing space charge of ion beams and wafer charging |
Also Published As
| Publication number | Publication date |
|---|---|
| TWI419193B (en) | 2013-12-11 |
| JP2008047535A (en) | 2008-02-28 |
| JP5241169B2 (en) | 2013-07-17 |
| TW200847216A (en) | 2008-12-01 |
| EA009514B1 (en) | 2008-02-28 |
| EA200601832A1 (en) | 2008-02-28 |
| CN101126147A (en) | 2008-02-20 |
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