JP2008047535A6 - Method for ion beam treatment of dielectric surface and apparatus for performing the method - Google Patents

Abstract

Disclosed is a method for ion beam processing of a dielectric surface, and an apparatus for performing the method, which can improve the neutralization effect of charges generated on the dielectric surface and can perform ion beam processing on both a flat surface and a curved surface. I will provide a.
By using graphite or boron as a material of a cathode 4 and using oxygen or a mixture thereof as a working gas, a sputtering product does not condense on the surface to be processed 1. Minimize contamination. Further, the effect of neutralizing the charge on the surface to be processed 1 can be obtained by partially overlapping the region where the ion flow is applied to the surface 1 to be processed and the intersecting region between this surface and the tunnel-like magnetic field portion. Improve. By using an accelerator that generates ion beams of various shapes as the ion source 2, it is possible to perform ion beam processing on both a flat surface and a curved surface.
[Selection] Figure 1

Description

  The proposed invention relates to the field of vacuum treatment of surfaces for the purpose of cleaning, activating, producing transformations, assisting, implanting and etching with ion flow. The present invention can be used for the purpose of neutralizing the charge on the dielectric surface prior to application of the thin film when the thin film is formed on the display and the glass for structuring purposes.

  There are known devices intended to treat the surface of the material with an ion stream that neutralizes the charge. Such an apparatus includes an ion source, an electron source, and a substrate surface to be processed. All of them are characterized by using an incandescent cathode as the electron source.

  The main drawback of this solution is the short service life of the cathode.

  Moreover, the cathode used in such a solution is a powerful heat radiation source, which acts on the surface to be treated and heats it. When heating is performed, the cathode material evaporates and contaminates the surface to be processed (Patent Documents 1, 2, and 3).

  A method and apparatus for treating a substrate with an ion flux, in which arc discharge functions as an electron source used to neutralize charges, is also known (Patent Document 4).

However, this engineering solution has the following drawbacks.
The operating efficiency of the electron source is low compared to the energy consumed,
-Uses an incandescent element and has a short service life,
-The design of the device is complicated and it is difficult to apply the device to the processing of a large area;
-Complicated processing of non-linear surfaces;
(Patent Document 4).

  Methods and apparatus are known for treating a surface to be treated with an ion beam and neutralizing the charge generated thereon, and these methods and apparatus use an SHF discharge device as an electron source.

  However, the engineering solution has a series of inherent drawbacks: it is expensive, it is complex in design, has low efficiency, can only be applied to small area processing, and low There is a drawback that it is designed to operate with a strong ion flux (Patent Document 5).

  The most similar to the method and apparatus for carrying out the method as claimed in the invention is an object that treats a substrate surface with an ion source that operates simultaneously with a magnetron. The essence of the patent is that the magnetron discharge device is an electron source, which is necessary for the operation of the ion source and the adjustment of the potential generated on the surface of the substrate (Patent Document 6). ).

  However, this solution is somewhat limited.

  First, the apparatus is only intended to support the process of applying the film, i.e., the apparatus cannot efficiently perform the process of cleaning and etching the substrate. The reason is that the treated surface is heavily contaminated with cathode sputtering products.

Second, the process of neutralizing the charge on the substrate is not optimal and requires the cathode discharge to be high power.
U.S. Pat. No. 4,731,540 US Pat. No. 5,136,171 US Pat. No. 6,724,160 US Pat. No. 6,313,428 US Pat. No. 5,576,538 US Pat. No. 6,454,910

  The object of the present invention is to eliminate all of the above-mentioned drawbacks and to provide dielectric surfaces of considerably different size types and shapes, from the narrow surfaces used in the equipment manufacturing industry to the very wide surfaces used when building buildings. , As well as ensuring that surfaces having a linear or curved shape are ion beam treated.

  The predetermined objective was achieved by the following. That is, the method includes generating a directional ion flow and a directional electron flow, acting on the dielectric surface to be processed by these flows, and neutralizing positive charges generated on the dielectric surface. In the method of ion beam treatment of a dielectric surface as described in the range, an electron flow is generated together with a tunnel-like magnetic field by plasma cathode discharge, and a part of the magnetic flux of the tunnel-like magnetic field is formed between the cathode surface and the dielectric surface to be treated. At the same time, the desired purpose was achieved by making the cathode from graphite and / or boron.

  In this proposed method, a portion of the tunnel-like magnetic field that simultaneously traverses the cathode surface and the dielectric surface to be processed is at least 20% of the total magnetic flux, and a region where the ion current acts on the surface to be processed, and this surface And a region where the tunnel-like magnetic field part intersects with each other partially overlap each other.

  In addition, the strength of the parallel component of the tunnel-like magnetic field on the cathode surface is adjusted within the range of 20 to 100 mT, and the cathode has a material with a low electron work function, ie a series of Cs, Ba, La, etc. One of which is 0.1-5.0% doped.

  A directional ion stream is generated by a controllable generator of working gas ions. An accelerator for drifting trapped electrons is used as the generator, and the composition of the working gas contains oxygen, and its content is 10 to 100%.

  The apparatus for carrying out the method according to the claims is also intended to carry out the method described above.

  As an invention, the ion beam processing method described in the scope of claims is performed as follows.

  A dielectric is placed in the vacuum chamber so that a directional flow of charged particles, ie ions and electrons, acts on the surface to be processed.

Before starting the process, the vacuum chamber is evacuated to a pressure range of 5 · 10 ⁻⁴ Pa to 10 ⁻³ Pa. Next, oxygen or a mixture with other gases is fed into the vacuum chamber, and the percentage of oxygen in the mixture is between 10% and 100%.

When the operating pressure is changed from 5 · 10 ⁻² Pa to 10 ⁻¹ Pa, a directional ion flow and a directional electron flow are generated.

  The first stream is generated by applying a positive potential to the anode of the working gas ion generator, and the second stream is generated by applying a negative potential to the cathode of the cathode discharge device.

  Here, the dielectric surface is treated simultaneously with an ion and electron stream that ensures neutralization of the charge generated on the surface.

  In order to improve the processing efficiency, the tunnel-like magnetic field generated in the region of the surface near the cathode of the cathode discharge device is contoured so that a part of the magnetic flux crosses the cathode surface and the dielectric surface to be processed at the same time. The

  Here, the electrons in the cathode discharge region move along the magnetic field lines that lead to the velocity vector.

  As evidenced by computational and experimental studies, at least 20% of the total magnetic flux that emits electrons to the dielectric surface must traverse the cathode and treated dielectric surfaces simultaneously.

  Here, the effect of ion flow on the surface to be processed and the intersecting region between this surface and the tunnel-like magnetic field part partially overlap in space, so that the neutralization effect is further enhanced.

  The magnetic field of the plasma cathode discharge is not only projected into the vector space within the range of 20 to 100 mT, but also expressed as an absolute value on the cathode surface. This is a condition in which a strong cathode discharge exists under reduced pressure, and is a condition in which the operation with the ion source is suitable.

  In this case, a large amount of electron flow can be supplied due to the high plasma concentration.

  Although various industrial facilities can be used as the ion source for the proposed method, the most preferred from an engineering and technical standpoint is an accelerator that drifts trapped electrons.

  Depending on the accelerator used, ion beams of various shapes can be generated so that both flat and curved surfaces can be ion beam processed. Alternatively, the accelerator can generate an extensive linear ion beam that can handle large dimension surfaces.

  Oxygen must be introduced into the working gas mixture to minimize contamination to the dielectric surface being processed.

  When plasma cathode discharge is used, the cathode material evaporates, thus contaminating the dielectric surface with the sputtering product.

However, when graphite or boron is used as the cathode material and oxygen or a mixture thereof is used as the working gas, volatile compounds (CO, CO ₂ , B ₂ O ₃ , BO ₂ ) are generated by sputtering the cathode. However, these volatile compounds are not condensed on the surface to be treated, but are exhausted from the chamber by a vacuum pump. Alternatively, these materials are characterized by low sputtering rates, so that the solution proposed here reduces the contamination of the treated dielectric surface to zero.

  The neutralizing action on the dielectric surface is further enhanced when the cathode material composition is doped with an element having a low electron work function, such as Cs, Ba, or La.

  In this case, the operation can be performed with a relatively low cathode discharge power due to a significant increase in electron current density. Here, it was confirmed by an investigation based on experiments that the amount of such an additive is in the range of 0.1 to 5.0%. When the concentration of the additive exceeds this range, these materials do not generate oxygen and volatile compounds, and contamination of the surface to be processed occurs.

  Completion of the process of ion beam processing of the dielectric surface is determined by the total exposure time for which the workpiece to be processed remains in the processing region by the ion and electron flow and the processing mode.

  When performing a processing process in a penetrating device, once the process is complete, the article is brought to the next position and the article to be processed by the next ion beam is placed at that position.

  When the process is complete, the vacuum chamber is filled with air, the pressure is at atmospheric pressure, and the goods are re-introduced.

Specific Example of Method for Ion Beam Treatment of Dielectric Surface FIG. 1 schematically shows an apparatus for explaining the implementation of the method as claimed in the claims, where 1 is the surface to be processed and 2 is An ion source 3 is an electron source including a cathode 4 of a cathode discharge device and a magnetic system 5, and 6 is a tunnel-like magnetic flux generated by the magnetic system 5.

  A surface 1 to be processed (for example, a product in which a glass plate having a size of 1260 × 940 mm is arranged in a transport holder is fed into a vacuum chamber for ion beam processing, and generates ions and electron currents in the chamber. Apparatuses 2 and 3 for each are arranged in front of the surface 1 to be processed.

The vacuum chamber is evacuated by a vacuum pump to a limiting pressure of 5 · 10 ⁻⁴ Pa to 10 ⁻³ Pa, and then a 70%: 30% oxygen-argon mixture is fed into the vacuum chamber.

  A positive potential of 4.2 kV is applied to the anode of the ion source 2.

  When the discharge is performed, a ribbon ion beam with a total current of 1.4 A is generated. At the same time, a potential of 550 V, which is negative with respect to the ground potential, is applied to the cathode 4 of the electron source 3. This potential causes a 5.5 A plasma discharge. Here, the magnetic system 5 generates a tunnel-like magnetic field 6 of the cathode discharge device.

  Next, the surface of the glass plate 1 is treated simultaneously with the ion and electron flow while ensuring the neutralization of the positive charge generated on the surface.

  In this case, the speed at which the plate 1 moves relative to the gas discharge devices 2 and 3 is set to 1.5 m / min.

  The tunnel-like magnetic field 6 generated on the surface of the cathode 4 of the cathode discharge device is contoured so that a part of the magnetic flux (for example, 25%) crosses the surface of the cathode 4 and the surface 1 to be processed of the glass plate at the same time. The Here, electrons existing in the cathode discharge region move along magnetic field lines that serve as a guide for the velocity vector.

  Neutralization is efficiently carried out by the proportion of magnetic flux 6 generated by the magnetic system 5 (25%), measured experimentally, which depends on the surface 1 of the dielectric (in this case the glass plate). This is because it is ensured that electrons are emitted and that the portion of the magnetic flux 6 simultaneously crosses the surface of the cathode 4 and the treated surface 1 of glass.

  In this case, the region where the ion flow acts on the surface 1 to be processed and the region where the surface intersects with the tunnel-like magnetic flux 6 partly overlap each other, thereby further enhancing the neutralization effect. .

  The intensity of the magnetic field of the plasma cathode discharge is not only projected into the vector space, but is also expressed as an absolute value on the surface of the cathode 4, which in this particular example is 40 mT.

By increasing the plasma concentration, electrons can flow at a current density of up to 10 mA / cm ² . In this case, an accelerator that drifts the confined electrons is used as the ion source 2, which allows ion beams of various configurations to process both flat dielectric surfaces and curved surfaces. As well as a wide range of linear ion beams for processing large articles.

  When using a plasma cathode discharge on the surface of the glass plate 1, oxygen is introduced into the working gas mixture in order to minimize the contaminants present as a result of the condensation of condensation products. In this particular case, the proportion of oxygen is 70%.

In the process of sputtering the cathode 4, the material used as the cathode 4 (in this case, graphite) and, the oxygen used as the working gas, also form a volatile compound CO _2, the CO ₂ is treated surface Does not clump, but is removed from the chamber by a vacuum pump.

  In addition, this material (graphite) is characterized in that the contamination of the treated surface 1 of the glass plate is actually reduced to zero because of its low sputtering coefficient.

  The effect of neutralization on the treated surface 1 of the glass is further strengthened than when the cathode material is doped with an element such as Cs having a low work function.

  In this case, the electron flow density is increased by a factor of 2 to 3, so that the operation can be performed with the cathode discharge power reduced. In this case, it was confirmed from experiments that such an increase was 3%.

  Completion of the process of ion beam treatment of the dielectric surface is determined by the total exposure time (2 minutes 30 seconds in this particular case) that keeps the workpiece to be treated in the ion and electron flow treatment area and the treatment mode. Is done.

  When performing a processing process in a penetrating device, once the process is complete, the article is transported to the next position and the article to be subsequently processed by the ion beam is placed at that position.

  When the process is complete, the vacuum chamber is filled with air, the pressure is at atmospheric pressure, and the article is reintroduced.

The method of ion beam processing of a dielectric surface described in the claims makes it possible to:
-Dielectric surfaces of various dimensional types and shapes are ion beam treated, from the narrow surfaces used in the equipment manufacturing industry to the very wide surfaces used when building buildings.
-The outer surface is treated as a straight, curved dielectric surface;
The operational efficiency of the ion and electron flow is high compared to the power consumption,
-Prolonging the service life of the cathode,
The operation is carried out with high-intensity ion and electron flow, thus ensuring the cleaning efficiency of the surface,
Reducing the contamination of the dielectric surface that occurs in the process of ion beam treatment of the surface, since the deposition of the sputtering product on the surface is actually zero,
Is possible.

  The apparatus proposed here as an invention is intended to carry out the method of ion beam treatment of dielectric surfaces as set out in the claims and is quite different from known apparatuses of the same purpose.

  The purpose of the claimed device for carrying out the method of ion beam treatment of a dielectric surface is to eliminate all the disadvantages mentioned for the said device for similar purposes (Patent Documents 1, 2, 3, 4, 5, 6).

  A predetermined object is an apparatus intended to carry out a method for ion beam processing of a dielectric surface, a vacuum chamber in which the dielectric surface is disposed, a working gas ion source, an electron source, and a target object A cathode discharge device having a cathode made of graphite and / or boron is used as an electron source in a device comprising a magnetic system intended to generate a magnetic flux arranged against a dielectric surface; A magnetic system for generating a tunnel-like magnetic flux on the surface is mounted below the cathode surface, and further, a cathode discharge device is disposed relative to the dielectric surface and the output opening of the ion source, This arrangement is such that a region where the ion flow acts on the surface to be processed and a region where this surface intersects with the magnetic flux partially form a region overlapping each other. Te, it is achieved.

  In this case, the regions that partially overlap each other include at least 20% of the magnetic flux generated by the magnetic system. The intensity of the parallel component of the tunnel-like magnetic flux on the cathode surface is in the range of 20 to 100 mT.

  The cathode material of the cathode discharge device is doped with a series of elements from Cs, Ba, La and / or their compounds in an amount of 0.1 to 5.0% by weight to drift trapped electrons. An accelerator is used as the working gas ion source.

  Here, the outer shape of the dielectric surface to be processed is flat or curved.

  The output aperture of the ion beam source is arranged parallel or at an angle to the dielectric surface to be processed, and the angle between the output aperture of the ion beam source and the dielectric surface to be processed is 0 ° and 90 °. Between.

  The cathode surface is arranged in parallel or at an angle to the dielectric surface to be processed. In this case, the angle between the cathode surface and the dielectric surface to be processed is 0 ° to 90 °.

  FIG. 2 shows a schematic diagram of an apparatus for carrying out a method for ion beam treatment of a dielectric surface, in which 1 is a dielectric surface to be treated, 2 is an ion source, and 3 is a cathode 4 of a cathode discharge device. And 6 represents a tunnel-like magnetic flux.

  The apparatus for carrying out the method operates as follows.

  A product (eg, a glass substrate with dimensions of 630 mm × 470 mm) placed in the transport section is placed in the transport holder and is in front of the ion source 2 and the electron source 3 including the cathode 4 and the magnetic system 5. In a vacuum chamber. In this case, the cathode 4 of the electron source 3 is made of graphite and / or boron.

  The magnetic system 5 of the electron source 3 is mounted below the surface of the cathode 4 and generates a tunnel-like magnetic flux 6 on the surface. In this case, the cathode discharge device is disposed relative to the dielectric surface 1 and the output opening of the ion source 2, and this disposition includes a region where the ion flow acts on the surface 1 to be processed, and this surface. And the region where the magnetic flux 6 intersects form a region that partially overlaps each other. The overlapping regions occupy 40% of the tunnel-like magnetic flux 6 generated by the magnetic system 5.

  The intensity of the parallel component of the tunnel-like magnetic flux 6 on the surface of the cathode 4 is 65 mT. An accelerator that drifts the confined electrons is used as the ion source 2.

In order to execute the ion beam treatment process, the vacuum chamber is evacuated by a vacuum pump until the residual pressure becomes 5 × 10 ⁻⁴ Pa.

A mixture of oxygen and argon in a ratio of 90%: 10% is fed into the ion source 2 so that the operating pressure in the chamber is 6.0 × 10 ⁻² Pa. A positive 4.0 kV potential with respect to the ground potential is applied to the anode of the ion source 2 to generate an ion beam having a total current of 0.9 A.

  At the same time, a negative 500 V potential is applied to the cathode 4 of the electron source 3 to cause a 1.8 A plasma discharge.

  Thus, the glass surface is processed simultaneously with the flow of ions and electrons. The level of charge neutralization on the dielectric surface 1 is monitored by a probe located in the processing region.

  The moving speed of the glass substrate with respect to the gas discharge device is 1.5 m / min, and the processing time is 40 seconds (FIG. 2).

  When the neutralization process is complete and the vacuum chamber is filled with air and the pressure is at atmospheric pressure, the article is re-loaded.

  3 to 10, various dielectric surfaces 1 to be processed, an ion source 2, a cathode 4 of a cathode discharge device, and an electron source 3 including a magnetic system 5 that generates a tunnel-like magnetic flux 6 are mutually arranged. The layout of is shown.

  3 to 6 are layout diagrams for processing a flat surface of a dielectric.

  Thus, in FIG. 3, the ion source 2 is surrounded by the electron source 3 and arranged inside the electron source 3, the output opening of the ion source 2, and the surface of the cathode 4 on which the magnetic system 5 generates the tunnel-like magnetic flux 6. Shows a layout view arranged in parallel with the dielectric surface 1 to be processed.

  In FIG. 4, an electron source 3 is surrounded by an ion source 2 and arranged inside thereof, and an ion source opening is arranged at an angle with respect to the dielectric surface 1 to be processed. 5 shows a layout diagram in which the surface of the cathode 4 having 5 is disposed.

  In FIG. 5, the ion source 2 is surrounded by an electron source 3 and disposed inside the ion source 2. Here, the ion source 2 has an opening disposed at an angle with respect to the dielectric surface 1 to be processed. The face of the cathode 4 with the magnetic system 5 of the source 3 shows a layout that is parallel to the dielectric surface 1 to be processed.

  FIG. 6 shows a layout view in which the ion source 2 is arranged inside and below the electron source 3 composed of the cathode 4 of the cathode discharge device and the magnetic system 5 that generates the tunnel-like magnetic flux 6. .

  In this figure, the opening of the ion source 2 is arranged in parallel with the dielectric surface 1 to be processed, and the angle between the surface of the cathode 4 and the dielectric surface 1 to be processed is 90 °.

  7 to 10 show a method for processing a dielectric having a curved surface.

  In FIG. 7, an outer cylindrical dielectric surface 1 is surrounded by an ion source 2 and an electron source 3, and an opening of the ion source 2 and a cathode 4 having a magnetic system 5 constituting the electron source 3. The layout is shown in which the surface is parallel to the dielectric surface 1 to be processed.

  In FIG. 8, the outer cylindrical surface 1 of the dielectric is also surrounded by an ion source 2 and an electron source 3, but the ion source 2 has an opening at an angle with respect to the dielectric surface 1 to be processed. The surface of the cathode 4 with the magnetic system 5 placed on it shows a layout view arranged parallel to the dielectric surface 1 to be processed.

  FIG. 9 shows a layout diagram for processing the inner surface of the dielectric cylinder. In this figure, an ion source 2 and an electron source 3 are disposed therein, and the opening of the ion source 2 and the surface of the cathode 4 having the magnetic system 5 are parallel to the dielectric surface 1 to be processed. .

  In FIG. 10, the cylindrical inner surface 1 of the dielectric is also processed by an ion source 2 and an electron source 3 disposed therein, but the ion source 2 has an opening with respect to the dielectric surface 1 to be processed. The surface of the cathode 4 of the cathode discharge device which is arranged at an angle and has the magnetic system 5 shows a layout view arranged parallel to the dielectric surface 1 to be processed.

  The arrangement of the apparatus is shown in FIGS. 3 to 10, and the operation principle is the same as that of the above-described apparatus in the example shown in FIG. The difference relates to the layout size and application efficiency of the device in actual professional equipment.

In the apparatus proposed here, which is a component of the processing equipment, the surface of a glass substrate having an area of 2322 cm ² (540 × 430 mm) used for display manufacture was subjected to ion beam treatment.

  The glass surface was subjected to ion beam treatment immediately before the transparent dielectric film was applied by a method of magnetron sputtering a ceramic ITO target.

  When performing ion beam cleaning, the necessary condition to obtain a defect-free film ITO film is to completely neutralize the charge on the surface.

  If not, the charged surface will attract particles from the plasma with the opposite sign. These fine particles having a size of 0.1 μm to 10 μm cause defects (pores, holes, minute irregularities, etc.) when an ITO thin film is applied.

  In order to eliminate or minimize the above defects, the operation mode of the apparatus is optimized by subsequently analyzing the presence or absence of surface defects.

Specific application example of this device Example 1
In order to perform the process of ion beam treatment of the glass plate, the vacuum chamber is evacuated by a cryogenic vacuum pump until the residual pressure becomes 5.5 × 10 ⁻⁴ Pa.

Pure oxygen is fed into the ion source 2 (FIG. 2), and then the operating pressure in the chamber is set to 8.0 × 10 ⁻² Pa.

  An ion beam having a total current of 0.8 A is generated by applying a 4.2 kV potential positive to the ground potential to the anode of the ion source 2.

  When the power source of the electron source 3 composed of the cathode 4 of the cathode discharge device and the magnetic system 5 that generates the tunnel-like magnetic flux 6 is turned off, the probe potential becomes a positive value of 390V.

  When a potential of 500 V, which is negative with respect to the ground potential, is applied to the cathode 4 of the electron source 3, the total power is 1000 W, and a 2.0 A plasma discharge is generated. Next, the probe potential becomes negative and becomes 35V.

  The speed at which the glass plate 1 moves relative to the gas discharge devices 2 and 3 is 1.5 m / min, and the processing time is 30 seconds.

  Next, the plate is transported to the position of the magnetron where an ITO thin film having a thickness of 0.15 μm is applied. After removing the article having the surface 1 to be processed from the vacuum chamber, the size of the defect on the surface 1 is analyzed using a microscope in a dark place.

  In this particular case, the maximum size of the defect does not exceed 0.2-0.3 μm. (When an article is processed using only an ion beam without neutralizing the charge on the surface, the size of the defect reaches 5 to 10 μm. 5 times more than if used).

Example 2
In order to carry out the ion beam cleaning process, the vacuum chamber is evacuated by a cryogenic vacuum pump until the residual pressure is 5.5 × 10 ⁻⁴ Pa.

Pure oxygen is fed into the ion source 2 (FIG. 3), and then the operating pressure in the chamber is set to 8.0 × 10 ⁻² Pa. Next, a potential of 4.2 kV that is positive with respect to the ground potential is applied to the anode of the ion source 2, and an ion beam having a total current of 0.8 A is generated.

  When the power source of the electron source 3 composed of the cathode 4 of the cathode discharge device and the magnetic system 5 that generates the tunnel-like magnetic flux 6 is turned off, the probe potential becomes a positive value of 390V.

  When a potential of 500 V, which is negative with respect to the ground potential, is applied to the cathode 4 of the electron source 3, a total power of 500 W is applied and a 1.0 A plasma discharge is generated. Next, the probe potential becomes negative and becomes 5V.

  The moving speed of the glass plate 1 relative to the gas discharge devices 2 and 3 is 1.5 m / min, and the processing time is 30 seconds.

  The plate is then transported to the position of the magnetron on which the 0.15 μm thick ITO thin film is applied. When the article having the surface 1 to be processed is taken out from the vacuum chamber, a microscope is used in a dark place to analyze the presence and the size of the surface of the processed article. Analysis revealed that the maximum size of the defects did not exceed 0.1-0.2 μm.

  Therefore, from a general analysis of the operation of this device, it is effective from the viewpoint that controlling the charge value on the dielectric surface reduces thin film defects in the process of further processing this surface when applying the ITO film. I understood that.

  The structure of the device based on the selected source is optimal in terms of functionality, as various geometric variations of the mechanism can be implemented.

  With the proposed structure as an invention, it is important that the design of this type of device can be a linear profile design that can handle large dimensions.

The method of ion beam treatment of the dielectric surface and the apparatus for carrying out the method are unique and suitable for all purposes. The method and apparatus enables the following:
-Dielectric surfaces of various dimensional types and shapes are ion beam treated, from the narrow surfaces used in the equipment manufacturing industry to the very wide surfaces used when building buildings.
-Improving the quality of ion beam treatment of the surface,
-The contour is straight, curved surfaces are processed,
-The occurrence of defects on the treated surface is minimized,
The surface is treated while the operating efficiency of the ion and electron source remains high compared to the power consumption;
-Long service life,
The device intended to carry out the method is simplified;
The operation is carried out with high-intensity ion and electron flow thus ensuring the efficiency of cleaning the surface,
The surface contamination that occurs in the process of ion beam treatment of the dielectric surface is reduced, since the concentration of the sputtered product on the surface is actually zero,
-The quality of the cleaning of the surface to be treated is high and the quality of the thin film deposition on the pre-treated surface is high,
Is guaranteed.

  The claimed method and apparatus for carrying out the method are industrially applicable in the field of dielectric surface vacuum processing, are compatible with today's state of the art, and are manufactured in multiple ways. Incorporated under conditions to facilitate the charge neutralization process and facilitate cleaning of the treated dielectric surface.

It is the schematic of the apparatus for enforcing the ion beam processing method of the dielectric surface which concerns on this invention. It is the schematic of the apparatus for enforcing the ion beam processing method of the dielectric surface which concerns on this invention. The ion source is surrounded by an electron source and placed inside it, and the output opening of the ion source and the face of the cathode where the magnetic system generates a tunnel-like magnetic flux are placed parallel to the dielectric surface to be processed. FIG. The electron source is surrounded and surrounded by the ion source, the ion source opening is disposed at an angle to the dielectric surface to be processed, and the surface of the cathode with the magnetic system is disposed parallel to this surface. FIG. An ion source is disposed within and surrounded by an electron source, wherein the ion source is disposed with the opening angled with respect to the dielectric surface to be processed and a cathode having a magnetic system of the electron source. The surface is a layout view parallel to the dielectric surface to be processed. FIG. 3 is a layout view in which an ion source is disposed inside and below an electron source including a cathode of a cathode discharge device and a magnetic system that generates a tunnel-like magnetic flux. The outer surface of the cylindrical dielectric is surrounded by the ion source and the electron source, and the opening of the ion source and the surface of the cathode having the magnetic system constituting the electron source are parallel to the dielectric surface to be processed. FIG. The outer cylindrical dielectric surface is also surrounded by an ion source and an electron source, but the ion source is positioned with the opening angled with respect to the dielectric surface to be processed, and the magnetic system The surface of the cathode having, is a layout diagram arranged parallel to the dielectric surface to be processed. An ion source and an electron source are arranged inside a cylindrical dielectric, and the arrangement of the ion source opening and the cathode having the magnetic system is parallel to the dielectric surface to be processed. The cylindrical surface inside the dielectric is also processed by the ion source and electron source located inside, but the ion source is positioned with the opening angled with respect to the processed dielectric surface. The cathode surface of the cathode discharge device having the magnetic system is a layout diagram arranged in parallel with the dielectric surface to be processed.

Explanation of symbols

1: Surface to be treated 2: Ion source 3: Electron source 4: Cathode 5: Magnetic system 6: Tunnel-like magnetic flux

Claims (19)

A dielectric surface to be processed, comprising generating a directional ion stream and a directional electron stream and acting on the surface of the dielectric material to neutralize positive charges generated on the dielectric surface; A method of ion treatment,
The electron flow is generated together with a tunnel-like magnetic field by plasma cathode discharge, and a part of the magnetic flux of the tunnel-like magnetic field crosses the cathode surface and the dielectric surface to be processed at the same time. A process characterized in that it is produced from graphite and / or boron.   The method of claim 1, wherein the portion of the tunnel-like magnetic field that simultaneously traverses the cathode surface and the dielectric surface to be treated is at least 20% of the total magnetic flux.   The region where the ion flow acts on the surface to be processed and the region where this surface intersects the tunnel-like magnetic field partially overlap each other. The method described in 1.   4. The method according to claim 1, wherein the intensity of the parallel component of the tunnel-like magnetic field on the cathode surface is adjusted within a range of 20 to 100 mT.   The cathode composition is doped with 0.1 to 5.0% of a material having a low electron work function, a series of materials such as Cs, Ba, La, etc. 5. The method according to any one of 4.   The method of claim 1, wherein the generation of the directional ion stream is performed by a generator capable of controlling the working gas ions.   The method according to claim 6, wherein the accelerator for drifting confined electrons is used as a generator of the working gas ions.   8. The method according to claim 6, wherein the composition of the working gas contains oxygen in a content of 10 to 100%. A magnetic system including a vacuum chamber, the dielectric system being disposed in the vacuum chamber, the working gas ion source, the electron source, and a magnetic system for generating magnetic flux disposed with respect to the dielectric surface to be processed A dielectric surface ion processing apparatus comprising:
A cathode discharge device having a cathode made of graphite and / or boron is used as an electron source, and the magnetic system for generating a tunnel-like magnetic flux on the cathode surface is mounted below the cathode surface; The arrangement of the cathode discharge device with respect to the dielectric surface and the output opening of the ion source is such that a region where an ion flow acts on the surface to be processed and a region where this surface and the magnetic flux intersect each other are A device characterized in that it is arranged so as to form a region that partially overlaps with the device.   The apparatus of claim 9, wherein the mutually overlapping regions include at least 20% of the magnetic flux generated by the magnetic system.   11. The apparatus according to claim 9, wherein the intensity of the parallel component of the tunnel-shaped magnetic flux on the cathode surface is in the range of 20 to 100 mT.   The cathode material is doped with a series of elements and / or compounds from Cs, Ba, La in an amount of 0.1 to 5.0% by weight. apparatus.   The apparatus according to claim 9, wherein an accelerator for drifting confined electrons is used as the working gas ion source.   The apparatus according to claim 9, wherein an outer shape of the dielectric surface to be processed is flat.   The apparatus according to claim 9, wherein an outer shape of the dielectric surface to be processed is curved.   14. The apparatus according to claim 9, wherein the output opening of the ion source is arranged in parallel or at an angle to the dielectric surface to be processed.   The apparatus according to claim 16, wherein an angle between an output opening of the ion source and the dielectric surface to be processed is from 0 ° to 90 °.   The apparatus according to claim 9, wherein the cathode surface is disposed in parallel or at an angle to the dielectric surface to be processed.   The apparatus of claim 18, wherein the angle between the cathode surface and the dielectric surface to be treated is from 0 ° to 90 °.

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