EA200601832A1 - METHOD OF ION TREATMENT OF SURFACE DIELECTRICS AND DEVICE FOR IMPLEMENTATION OF METHOD - Google Patents
METHOD OF ION TREATMENT OF SURFACE DIELECTRICS AND DEVICE FOR IMPLEMENTATION OF METHODInfo
- Publication number
- EA200601832A1 EA200601832A1 EA200601832A EA200601832A EA200601832A1 EA 200601832 A1 EA200601832 A1 EA 200601832A1 EA 200601832 A EA200601832 A EA 200601832A EA 200601832 A EA200601832 A EA 200601832A EA 200601832 A1 EA200601832 A1 EA 200601832A1
- Authority
- EA
- Eurasian Patent Office
- Prior art keywords
- cathode
- dielectric
- zone
- tunnel
- ion
- Prior art date
Links
Abstract
Способ ионной обработки диэлектрических поверхностей и устройство для его реализации относятся к области вакуумной обработки поверхности потоком ионов с целью ее очистки, активации, модификации, ассистирования, имплантации, травления и предназначены для нейтрализации заряда на поверхности диэлектрика перед нанесением плёночного покрытия. Предлагаемый в качестве изобретения способ отличается от известных способов аналогичного назначения тем, что поток электронов формируют с помощью плазменного катодного разряда с туннелеобразным магнитным полем, причем часть магнитного потока туннелеобразного магнитного поля одновременно пересекает поверхность катода и обрабатываемую поверхность диэлектрика. а в качестве катода используют графит и/или бор. При этом в состав рабочего газа включают кислород с содержанием 10-100%. Предлагаемое в качестве изобретения устройство для реализации предлагаемого способа отличается от известных устройств аналогичного назначения тем, что в качестве источника электронов используют катодное разрядное устройство, катод которого выполнен из графита и/или бора, а магнитная система установлена под поверхностью катода для создания на его поверхности магнитного потока туннелеобразной формы. При этом катодное разрядное устройство расположено относительно поверхности диэлекфика и выходной апературы источника ионов таким образом, что зона воздействия потока ионов на обрабатываемую поверхность и зона пересечения магнитного потока с этой поверхностью образуют зону взаимного перекрытия.The method of ion treatment of dielectric surfaces and the device for its implementation relate to the field of vacuum surface treatment with a stream of ions in order to clean it, activate, modify, assist, implant, etch and are designed to neutralize the charge on the dielectric surface before applying the film coating. The method proposed as an invention differs from the known methods of a similar purpose in that the electron flow is generated using a plasma cathode discharge with a tunnel-shaped magnetic field, with a part of the magnetic flux of the tunnel-shaped magnetic field simultaneously crossing the surface of the cathode and the surface of the dielectric. and graphite and / or boron are used as the cathode. In this case, the composition of the working gas includes oxygen with a content of 10-100%. The device proposed as an invention for implementing the proposed method differs from known devices of similar purpose in that a cathode discharge device is used as an electron source, the cathode of which is made of graphite and / or boron, and the magnetic system is installed under the surface of the cathode to create on its surface a magnetic tunnel-shaped flow. In this case, the cathode discharge device is located relative to the surface of the dielectric and the output aperture of the ion source in such a way that the zone of influence of the ion flux on the surface being processed and the zone of intersection of the magnetic flux with this surface form a zone of mutual overlap.
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EA200601832A EA200601832A1 (en) | 2006-08-16 | 2006-08-16 | METHOD OF ION TREATMENT OF SURFACE DIELECTRICS AND DEVICE FOR IMPLEMENTATION OF METHOD |
TW96117921A TWI419193B (en) | 2006-08-16 | 2007-05-18 | Method of beam treatment of dielectric surface and device for implementing this method |
CN 200710107941 CN101126147B (en) | 2006-08-16 | 2007-05-18 | Ion beam treating dielectric surface method and device for applying the same |
JP2007211954A JP5241169B2 (en) | 2006-08-16 | 2007-08-15 | Method for ion beam treatment of dielectric surface and apparatus for performing the method |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EA200601832A EA200601832A1 (en) | 2006-08-16 | 2006-08-16 | METHOD OF ION TREATMENT OF SURFACE DIELECTRICS AND DEVICE FOR IMPLEMENTATION OF METHOD |
Publications (2)
Publication Number | Publication Date |
---|---|
EA009514B1 EA009514B1 (en) | 2008-02-28 |
EA200601832A1 true EA200601832A1 (en) | 2008-02-28 |
Family
ID=39094280
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
EA200601832A EA200601832A1 (en) | 2006-08-16 | 2006-08-16 | METHOD OF ION TREATMENT OF SURFACE DIELECTRICS AND DEVICE FOR IMPLEMENTATION OF METHOD |
Country Status (4)
Country | Link |
---|---|
JP (1) | JP5241169B2 (en) |
CN (1) | CN101126147B (en) |
EA (1) | EA200601832A1 (en) |
TW (1) | TWI419193B (en) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102751154A (en) * | 2011-04-22 | 2012-10-24 | 上海凯世通半导体有限公司 | Real-time detection and control device for ion implantation |
GB201216138D0 (en) * | 2012-09-11 | 2012-10-24 | Gencoa Ltd | Plasma source |
RU170626U1 (en) * | 2016-10-31 | 2017-05-03 | Федеральное государственное бюджетное образовательное учреждение высшего образования "Томский государственный университет систем управления и радиоэлектроники" (ТУСУР) | Installation of local ion etching of dielectric surfaces |
CN109003940A (en) * | 2018-07-18 | 2018-12-14 | 深圳市华星光电技术有限公司 | Tft array substrate and preparation method thereof |
KR20210074326A (en) * | 2019-01-30 | 2021-06-21 | 어플라이드 머티어리얼스, 인코포레이티드 | A method for cleaning a vacuum system, a method for vacuum processing of a substrate, and an apparatus for vacuum processing a substrate |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0742586B2 (en) * | 1988-05-10 | 1995-05-10 | 松下電器産業株式会社 | Thin film manufacturing method |
US5136171A (en) * | 1990-03-02 | 1992-08-04 | Varian Associates, Inc. | Charge neutralization apparatus for ion implantation system |
RU2058428C1 (en) * | 1990-07-24 | 1996-04-20 | Санкт-Петербургский государственный электротехнический университет им.В.И.Ульянова (Ленина) | Device for vacuum plating |
US5466929A (en) * | 1992-02-21 | 1995-11-14 | Hitachi, Ltd. | Apparatus and method for suppressing electrification of sample in charged beam irradiation apparatus |
CA2326202C (en) * | 1998-03-31 | 2008-06-17 | Universiteit Gent | Method and apparatus for deposition of biaxially textured coatings |
US6313428B1 (en) * | 1999-10-12 | 2001-11-06 | Advanced Ion Beam Technology, Inc. | Apparatus and method for reducing space charge of ion beams and wafer charging |
US6454910B1 (en) * | 2001-09-21 | 2002-09-24 | Kaufman & Robinson, Inc. | Ion-assisted magnetron deposition |
JP3680274B2 (en) * | 2002-03-27 | 2005-08-10 | 住友イートンノバ株式会社 | Ion beam charge neutralization apparatus and method |
US6740894B1 (en) * | 2003-02-21 | 2004-05-25 | Axcelis Technologies, Inc. | Adjustable implantation angle workpiece support structure for an ion beam implanter utilizing a linear scan motor |
FR2856677B1 (en) * | 2003-06-27 | 2006-12-01 | Saint Gobain | SUBSTRATE COATED WITH A DIELECTRIC LAYER AND METHOD FOR MANUFACTURING THE SAME |
-
2006
- 2006-08-16 EA EA200601832A patent/EA200601832A1/en not_active IP Right Cessation
-
2007
- 2007-05-18 CN CN 200710107941 patent/CN101126147B/en not_active Expired - Fee Related
- 2007-05-18 TW TW96117921A patent/TWI419193B/en not_active IP Right Cessation
- 2007-08-15 JP JP2007211954A patent/JP5241169B2/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
CN101126147B (en) | 2012-12-05 |
EA009514B1 (en) | 2008-02-28 |
TW200847216A (en) | 2008-12-01 |
CN101126147A (en) | 2008-02-20 |
JP5241169B2 (en) | 2013-07-17 |
JP2008047535A (en) | 2008-02-28 |
TWI419193B (en) | 2013-12-11 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
KR20180084647A (en) | Plasma processing apparatus | |
TW200608489A (en) | Plasma treatment method and plasma etching method | |
WO2006077582A3 (en) | System and method for treating biological tissue with a plasma gas discharge | |
EA200601832A1 (en) | METHOD OF ION TREATMENT OF SURFACE DIELECTRICS AND DEVICE FOR IMPLEMENTATION OF METHOD | |
GB2573435A8 (en) | Apparatus for detecting constituents in a sample and method of using the same | |
EP3062331A3 (en) | Ambient desorption, ionization, and excitation for spectrometry | |
TW200707552A (en) | Plasma doping method and plasma doping apparatus | |
EA201692406A1 (en) | METHOD FOR TREATING SAPPHIRE MATERIAL FOR MODIFICATION OF REFLECTED COLOR OF THE SURFACE OF SAPPIRE MATERIAL | |
MY147170A (en) | Method and device for treatment or coating of surfaces | |
TW200618026A (en) | Beam space-charge compensation device and ion implantation system having the same | |
WO2012073142A3 (en) | Method and device for ion implantation | |
JP2015525438A5 (en) | Method and apparatus for generating an ion beam having gallium ions | |
EP2819148A3 (en) | Electron ionization (EI) utilizing different EI energies | |
TW200737271A (en) | Techniques for reducing effects of photoresist outgassing | |
WO2014128462A3 (en) | An analytical apparatus utilising electron impact ionisations | |
WO2012172436A3 (en) | Looped ionization source | |
SG11201811663XA (en) | Method for implanting single or multiply charged ions into a surface of a treated object and device for implementation of the method | |
MX2012011702A (en) | Device of non-thermal plasma beam as a special ionization source for environmental mass spectroscopy and method for applying the same. | |
JP2015037079A5 (en) | ||
EA201892252A1 (en) | ANTI-REFLECTIVE SUSTAINABLE TO DRUGS GLASS SUBSTRATE AND METHOD OF ITS MANUFACTURE | |
EP3977823A4 (en) | System and method for generating and accelerating magnetized plasma | |
JP2020507883A5 (en) | ||
BR0317372A (en) | Vacuum arc source with magnetic field generator device | |
JP2018532569A5 (en) | ||
EA201892197A1 (en) | GLASS SUBSTRATE WITH DECREASED INSIDE REFLECTION AND METHOD OF ITS MANUFACTURE |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
MM4A | Lapse of a eurasian patent due to non-payment of renewal fees within the time limit in the following designated state(s) |
Designated state(s): BY RU |