EA200601832A1 - METHOD OF ION TREATMENT OF SURFACE DIELECTRICS AND DEVICE FOR IMPLEMENTATION OF METHOD - Google Patents

METHOD OF ION TREATMENT OF SURFACE DIELECTRICS AND DEVICE FOR IMPLEMENTATION OF METHOD

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Publication number
EA200601832A1
EA200601832A1 EA200601832A EA200601832A EA200601832A1 EA 200601832 A1 EA200601832 A1 EA 200601832A1 EA 200601832 A EA200601832 A EA 200601832A EA 200601832 A EA200601832 A EA 200601832A EA 200601832 A1 EA200601832 A1 EA 200601832A1
Authority
EA
Eurasian Patent Office
Prior art keywords
cathode
dielectric
zone
tunnel
ion
Prior art date
Application number
EA200601832A
Other languages
Russian (ru)
Other versions
EA009514B1 (en
Inventor
Владимир Яковлевич ШИРИПОВ
Николай Евгеньевич Левчук
Сергей Павлович МАРЫШЕВ
Владимир Анатольевич Савенко
Айрат Хамитович ХИСАМОВ
Александр Евгеньевич Хохлов
Original Assignee
Владимир Яковлевич ШИРИПОВ
Николай Евгеньевич Левчук
Сергей Павлович МАРЫШЕВ
Владимир Анатольевич Савенко
Айрат Хамитович ХИСАМОВ
Александр Евгеньевич Хохлов
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Владимир Яковлевич ШИРИПОВ, Николай Евгеньевич Левчук, Сергей Павлович МАРЫШЕВ, Владимир Анатольевич Савенко, Айрат Хамитович ХИСАМОВ, Александр Евгеньевич Хохлов filed Critical Владимир Яковлевич ШИРИПОВ
Priority to EA200601832A priority Critical patent/EA200601832A1/en
Priority to TW96117921A priority patent/TWI419193B/en
Priority to CN 200710107941 priority patent/CN101126147B/en
Priority to JP2007211954A priority patent/JP5241169B2/en
Publication of EA009514B1 publication Critical patent/EA009514B1/en
Publication of EA200601832A1 publication Critical patent/EA200601832A1/en

Links

Abstract

Способ ионной обработки диэлектрических поверхностей и устройство для его реализации относятся к области вакуумной обработки поверхности потоком ионов с целью ее очистки, активации, модификации, ассистирования, имплантации, травления и предназначены для нейтрализации заряда на поверхности диэлектрика перед нанесением плёночного покрытия. Предлагаемый в качестве изобретения способ отличается от известных способов аналогичного назначения тем, что поток электронов формируют с помощью плазменного катодного разряда с туннелеобразным магнитным полем, причем часть магнитного потока туннелеобразного магнитного поля одновременно пересекает поверхность катода и обрабатываемую поверхность диэлектрика. а в качестве катода используют графит и/или бор. При этом в состав рабочего газа включают кислород с содержанием 10-100%. Предлагаемое в качестве изобретения устройство для реализации предлагаемого способа отличается от известных устройств аналогичного назначения тем, что в качестве источника электронов используют катодное разрядное устройство, катод которого выполнен из графита и/или бора, а магнитная система установлена под поверхностью катода для создания на его поверхности магнитного потока туннелеобразной формы. При этом катодное разрядное устройство расположено относительно поверхности диэлекфика и выходной апературы источника ионов таким образом, что зона воздействия потока ионов на обрабатываемую поверхность и зона пересечения магнитного потока с этой поверхностью образуют зону взаимного перекрытия.The method of ion treatment of dielectric surfaces and the device for its implementation relate to the field of vacuum surface treatment with a stream of ions in order to clean it, activate, modify, assist, implant, etch and are designed to neutralize the charge on the dielectric surface before applying the film coating. The method proposed as an invention differs from the known methods of a similar purpose in that the electron flow is generated using a plasma cathode discharge with a tunnel-shaped magnetic field, with a part of the magnetic flux of the tunnel-shaped magnetic field simultaneously crossing the surface of the cathode and the surface of the dielectric. and graphite and / or boron are used as the cathode. In this case, the composition of the working gas includes oxygen with a content of 10-100%. The device proposed as an invention for implementing the proposed method differs from known devices of similar purpose in that a cathode discharge device is used as an electron source, the cathode of which is made of graphite and / or boron, and the magnetic system is installed under the surface of the cathode to create on its surface a magnetic tunnel-shaped flow. In this case, the cathode discharge device is located relative to the surface of the dielectric and the output aperture of the ion source in such a way that the zone of influence of the ion flux on the surface being processed and the zone of intersection of the magnetic flux with this surface form a zone of mutual overlap.

EA200601832A 2006-08-16 2006-08-16 METHOD OF ION TREATMENT OF SURFACE DIELECTRICS AND DEVICE FOR IMPLEMENTATION OF METHOD EA200601832A1 (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
EA200601832A EA200601832A1 (en) 2006-08-16 2006-08-16 METHOD OF ION TREATMENT OF SURFACE DIELECTRICS AND DEVICE FOR IMPLEMENTATION OF METHOD
TW96117921A TWI419193B (en) 2006-08-16 2007-05-18 Method of beam treatment of dielectric surface and device for implementing this method
CN 200710107941 CN101126147B (en) 2006-08-16 2007-05-18 Ion beam treating dielectric surface method and device for applying the same
JP2007211954A JP5241169B2 (en) 2006-08-16 2007-08-15 Method for ion beam treatment of dielectric surface and apparatus for performing the method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
EA200601832A EA200601832A1 (en) 2006-08-16 2006-08-16 METHOD OF ION TREATMENT OF SURFACE DIELECTRICS AND DEVICE FOR IMPLEMENTATION OF METHOD

Publications (2)

Publication Number Publication Date
EA009514B1 EA009514B1 (en) 2008-02-28
EA200601832A1 true EA200601832A1 (en) 2008-02-28

Family

ID=39094280

Family Applications (1)

Application Number Title Priority Date Filing Date
EA200601832A EA200601832A1 (en) 2006-08-16 2006-08-16 METHOD OF ION TREATMENT OF SURFACE DIELECTRICS AND DEVICE FOR IMPLEMENTATION OF METHOD

Country Status (4)

Country Link
JP (1) JP5241169B2 (en)
CN (1) CN101126147B (en)
EA (1) EA200601832A1 (en)
TW (1) TWI419193B (en)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102751154A (en) * 2011-04-22 2012-10-24 上海凯世通半导体有限公司 Real-time detection and control device for ion implantation
GB201216138D0 (en) * 2012-09-11 2012-10-24 Gencoa Ltd Plasma source
RU170626U1 (en) * 2016-10-31 2017-05-03 Федеральное государственное бюджетное образовательное учреждение высшего образования "Томский государственный университет систем управления и радиоэлектроники" (ТУСУР) Installation of local ion etching of dielectric surfaces
CN109003940A (en) * 2018-07-18 2018-12-14 深圳市华星光电技术有限公司 Tft array substrate and preparation method thereof
KR20210074326A (en) * 2019-01-30 2021-06-21 어플라이드 머티어리얼스, 인코포레이티드 A method for cleaning a vacuum system, a method for vacuum processing of a substrate, and an apparatus for vacuum processing a substrate

Family Cites Families (10)

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Publication number Priority date Publication date Assignee Title
JPH0742586B2 (en) * 1988-05-10 1995-05-10 松下電器産業株式会社 Thin film manufacturing method
US5136171A (en) * 1990-03-02 1992-08-04 Varian Associates, Inc. Charge neutralization apparatus for ion implantation system
RU2058428C1 (en) * 1990-07-24 1996-04-20 Санкт-Петербургский государственный электротехнический университет им.В.И.Ульянова (Ленина) Device for vacuum plating
US5466929A (en) * 1992-02-21 1995-11-14 Hitachi, Ltd. Apparatus and method for suppressing electrification of sample in charged beam irradiation apparatus
CA2326202C (en) * 1998-03-31 2008-06-17 Universiteit Gent Method and apparatus for deposition of biaxially textured coatings
US6313428B1 (en) * 1999-10-12 2001-11-06 Advanced Ion Beam Technology, Inc. Apparatus and method for reducing space charge of ion beams and wafer charging
US6454910B1 (en) * 2001-09-21 2002-09-24 Kaufman & Robinson, Inc. Ion-assisted magnetron deposition
JP3680274B2 (en) * 2002-03-27 2005-08-10 住友イートンノバ株式会社 Ion beam charge neutralization apparatus and method
US6740894B1 (en) * 2003-02-21 2004-05-25 Axcelis Technologies, Inc. Adjustable implantation angle workpiece support structure for an ion beam implanter utilizing a linear scan motor
FR2856677B1 (en) * 2003-06-27 2006-12-01 Saint Gobain SUBSTRATE COATED WITH A DIELECTRIC LAYER AND METHOD FOR MANUFACTURING THE SAME

Also Published As

Publication number Publication date
CN101126147B (en) 2012-12-05
EA009514B1 (en) 2008-02-28
TW200847216A (en) 2008-12-01
CN101126147A (en) 2008-02-20
JP5241169B2 (en) 2013-07-17
JP2008047535A (en) 2008-02-28
TWI419193B (en) 2013-12-11

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MM4A Lapse of a eurasian patent due to non-payment of renewal fees within the time limit in the following designated state(s)

Designated state(s): BY RU