CN101120304A - Transparent planar body and transparent touch switch - Google Patents

Transparent planar body and transparent touch switch Download PDF

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Publication number
CN101120304A
CN101120304A CNA2006800046935A CN200680004693A CN101120304A CN 101120304 A CN101120304 A CN 101120304A CN A2006800046935 A CNA2006800046935 A CN A2006800046935A CN 200680004693 A CN200680004693 A CN 200680004693A CN 101120304 A CN101120304 A CN 101120304A
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transparent
nesa coating
planar body
transparent planar
refractive index
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CN100552606C (en
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若林尚宏
山田勉
佐佐木邦晃
古川修二
塚本启司
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Gunze Ltd
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Gunze Ltd
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Abstract

Disclosed are a transparent planar body improved in visibility and a transparent touch switch. Specifically disclosed is a transparent planar body (1) having a patterned transparent conductive film (12) on at least one side of a transparent substrate (11). This transparent planar body (1) comprises a transmittance-adjusting layer for approximating the transmission spectrum of light transmitted through a region with pattern, wherein the transparent conductive film (12) is formed, via the transparent substrate (11) with the transmission spectrum of light transmitted through a region without pattern, wherein the transparent conductive film (12) is not formed, via the transparent substrate (11).

Description

Transparent planar body and transparent touch switch
Technical field
The present invention relates to transparent planar body and transparent touch switch.
Background technology
The someone proposes to be used for to detect the multiple structure of the transparent touch switch of input position, for example transparent electrostatic capacitive contact-making switch.For example, patent documentation 1 discloses transparent touch switch, and it comprises the dielectric layer between a pair of transparent planar body, and each is equipped with the nesa coating that is patterned to reservation shape described transparent planar body.When the operator was surperficial with operatings of contacts such as fingers, described transparent touch switch detected contact position by perception through the capacitance variations that human body grounding produces.
This transparent touch switch is installed on the surface of liquid crystal indicator, CRT etc.In this structure, the pattern form of the nesa coating that forms in described transparent planar body becomes obviously, and this has reduced the visibility of described contact-making switch.
Disclosed nesa coating is an example of known transparent planar body in patent documentation 2.This nesa coating comprises the end liner layer between conductive layer formation film and conductive layer.Described end liner layer forms by having the two-layer of different refractivity.Specifically, the zinc oxide/stancic oxide film that will have a high index of refraction of 600  thickness is arranged in and approaches silicon oxide film that described conductive layer forms film and will have a low-refraction of 450  thickness and arrange and approach described conductive layer.
When this nesa coating was used as transparent electrostatic capacitive contact-making switch, the pattern form of described conductive layer became obviously equally, and therefore left some room for improvement in this respect.
Patent documentation 1: the open No.2003-173238 (Fig. 1 and 5) of Japanese unexamined patent publication No.
Patent documentation 2: the open No.2003-197035 (table 1) of Japanese unexamined patent publication No.
Summary of the invention
The problem to be solved in the present invention
The purpose of this invention is to provide transparent planar body and transparent touch switch with improved visibility.
Solve the method for described problem
Described purpose of the present invention can be finished in the following way: the transparent planar body that comprises transparency carrier; The nesa coating of the patterning that at least one surface of described transparency carrier, forms; Adjust layer with transmittance, it is used to make via described transparency carrier, sees through the optical transmission spectrum of the pattered region that nesa coating wherein is provided with identical through the optical transmission spectrum of the non-pattered region that nesa coating wherein is not provided.
Preferably in described transparent planar body, described transmittance adjustment layer is equipped with has the external coating on a surface of the described transparency carrier of covering of homogeneous thickness basically, and this external coating is thicker and have a refractive index lower than described nesa coating than described nesa coating.
Preferred described external coating is formed by the silicon tin-oxide.
Also preferred described external coating has 70 to 80nm thickness.
Preferably the refractive index difference between described nesa coating and described external coating is 0.03 to 0.4.
When the end liner layer is between described transparency carrier and described nesa coating, obtain preferred construction, wherein said end liner layer is by comprising that the two-layer at least layered product with different optical indexs forms, and described nesa coating forms on the low-index layer side.
Described purpose of the present invention can be finished with transparent touch switch, described transparent touch switch comprises a plurality of transparent planar bodies, wherein said a plurality of transparent planar body is attached to each other by adhesive phase, and play the effect of transparent electrostatic capacitive contact-making switch, and the refractive index of described adhesive phase is lower than the refractive index of described nesa coating.
In this transparent touch switch, preferably provide linear polarizing plate in its front side.
Also preferred described transparent touch switch is included in the linear polarizing plate of front side and quarter wave plate and at the quarter wave plate of rear side.
Also preferred described transparency carrier is a quarter wave plate.
Preferably in described transparent planar body, described transmittance adjustment layer is equipped with the end liner layer, this end liner layer is formed by the layered product that comprises low-index layer and high refractive index layer, the optical index of described high refractive index layer is higher than the optical index of described low-index layer, wherein said end liner layer is as follows between described transparency carrier and described nesa coating, described mode is for to be formed on described low-index layer side with described nesa coating, and described high refractive index layer is thinner than described low-index layer.
Preferred described high refractive index layer has 10 to 25nm thickness, and described low-index layer has 25 to 45nm thickness.
Preferred described high refractive index layer is formed by the silicon tin-oxide, and described low-index layer is formed by monox.
Also preferred described nesa coating has 10 to 25nm thickness.
Described purpose of the present invention can be finished by transparent electrostatic capacitive contact-making switch, and described transparent electrostatic capacitive contact-making switch comprises a plurality of transparent planar bodies that are attached to each other by adhesive phase.
Described purpose of the present invention also can be finished by following transparent electrostatic capacitive contact-making switch, described transparent electrostatic capacitive contact-making switch comprises a plurality of transparent planar bodies, each of wherein said a plurality of transparent planar bodies is arranged in such a way, described mode be with they nesa coating toward each other, and described a plurality of transparent planar bodies are attached to each other, have adhesive phase therebetween.The thickness of described nesa coating is 20 to 25nm, and the refractive index of described adhesive phase is for being not less than 1.6.
Described purpose of the present invention also can be finished by following transparent electrostatic capacitive contact-making switch, described transparent electrostatic capacitive contact-making switch comprises a plurality of transparent planar bodies, each of wherein said a plurality of transparent planar bodies is arranged in such a way, described mode be with they nesa coating toward each other, and described a plurality of transparent planar bodies are attached to each other, have adhesive phase therebetween, the thickness of wherein said nesa coating is 25 to 30nm, and the refractive index of adhesive phase is for being not less than 1.7.
In this transparent touch switch, preferably provide linear polarizing plate in the front side.
Also preferred this transparent touch switch is equipped with at the linear polarizing plate of front side and quarter wave plate and at the quarter wave plate of rear side.
Also preferred described transparency carrier is a quarter wave plate.
In described transparent planar body, preferred described transmittance adjustment layer comprises overlayer, not form the expose portion of described nesa coating on the surface that covers described transparency carrier, wherein form described overlayer and make its surface and flush of described nesa coating, and described tectal refractive index is the same substantially with the refractive index of described nesa coating.
Preferred described overlayer is formed by the silicon tin-oxide.
Preferred described nesa coating is formed by carbon nano tube compound material.
Preferred described transparent planar body also comprises the end liner layer, this end liner layer is formed by the layered product of low-index layer and high refractive index layer, described high refractive index layer has the optical index higher than described low-index layer, wherein said end liner layer is between described nesa coating and described overlayer and described transparency carrier, promptly, described end liner layer is positioned on the described nesa coating and is positioned under described overlayer and the described transparency carrier, makes described nesa coating and described overlayer be arranged on the described low-index layer side.
Preferred described transparent planar body also comprises the external coating that covers described nesa coating and described cover surface, and wherein this external coating has flat surfaces.
Described purpose of the present invention also can be finished by following transparent electrostatic capacitive contact-making switch, and described transparent electrostatic capacitive contact-making switch comprises a plurality of transparent planar bodies, and wherein said a plurality of transparent planar bodies are attached to each other by adhesive phase.
Described purpose of the present invention also can be finished by following transparent resistance film type contact-making switch, described transparent resistance film type contact-making switch comprises a plurality of transparent planar bodies that are arranged in such a way, described mode is for making described nesa coating toward each other, and described transparent planar body has the predetermined space that forms by partition betwixt.
In this transparent touch switch, preferably provide linear polarizing plate in the front side.
Linear polarizing plate and quarter wave plate also preferably are provided in the front side and provide quarter wave plate at rear side.
Also preferred described transparency carrier is a quarter wave plate.
Also preferred described nesa coating comprises a plurality of banded electrically conducting transparent members that have predetermined space therebetween, described transmittance adjustment layer comprise via between the banded transparent control member of insulation slot placement between two banded electrically conducting transparent members, the transparent control member of described band shape is by forming with the same material of described banded electrically conducting transparent member, and comprises a plurality of impedances slit.
Also preferably in described transparent planar body, arrange described a plurality of impedances slit so that an insulation slit is connected to another, described insulation slit is adjacent to each banded transparent control member.
Also the preferably clear plane body also comprises the isolation slit along described insulation slot placement, to isolate each banded transparent control member.
Described purpose of the present invention can reach by following transparent electrostatic capacitive contact-making switch, and described transparent electrostatic capacitive contact-making switch comprises a plurality of transparent planar bodies, and wherein each transparent planar body is attached to each other by adhesive phase.
Described purpose of the present invention can reach by following transparent resistance film type contact-making switch, described transparent resistance film type contact-making switch comprises a plurality of transparent planar bodies, wherein arrange described a plurality of transparent planar body so that have the predetermined space that produces by partition therebetween, make described banded transparent conductive body toward each other.
Preferred this transparent touch switch is included in the linear polarizing plate of front side.
Linear polarizing plate and quarter wave plate also preferably are provided in the front side and provide quarter wave plate at rear side.
Also preferred described transparency carrier is a quarter wave plate.
The invention effect
The invention provides the transparent planar body and the transparent touch switch that can improve visibility.
Description of drawings
Fig. 1 is the schematic sectional view of explanation according to the transparent touch switch of first embodiment of the invention.
Fig. 2 is the planimetric map of the transparent touch switch part of key diagram 1.
Fig. 3 is the planimetric map of another part of the transparent touch switch of key diagram 1.
Fig. 4 is the planimetric map of variation instance of the transparent touch switch of key diagram 1.
Fig. 5 is the planimetric map of another variation instance of the transparent touch switch of key diagram 1.
Fig. 6 (a) and 6 (b) are the sectional views that schematically illustrates the structure of the measuring samples of using in the embodiment of the invention.
The transmitted spectrum of the measuring samples shown in Fig. 7 key diagram 6.
Fig. 8 illustrates the transmitted spectrum of comparative example.
Fig. 9 is the schematic sectional view of explanation according to the structure of the transparent touch switch of second embodiment of the invention.
Figure 10 illustrates when providing and do not provide nesa coating, the analog result that the difference in reflectivity between them changes, and getting the electrically conducting transparent film thickness is 30nm.
Figure 11 illustrates when providing and do not provide nesa coating, the analog result that the difference in reflectivity between them changes, and getting the electrically conducting transparent film thickness is 15nm.
Figure 12 illustrates when providing and do not provide nesa coating, the analog result that the difference in reflectivity between them changes, and getting the electrically conducting transparent film thickness is 20nm.
Figure 13 illustrates when providing and do not provide nesa coating, the analog result that the difference in reflectivity between them changes, and getting the electrically conducting transparent film thickness is 25nm.
Figure 14 illustrates when providing and do not provide nesa coating, the analog result that the difference in reflectivity between them changes.
Figure 15 illustrates when providing and do not provide nesa coating, another analog result that the difference in reflectivity between them changes.
Figure 16 illustrates when providing and do not provide nesa coating, another analog result that the difference in reflectivity between them changes.
Figure 17 illustrates when providing and do not provide nesa coating, another analog result that the difference in reflectivity between them changes.
Figure 18 is the schematic sectional view of explanation according to the structure of the transparent touch switch of third embodiment of the invention.
Figure 19 (a) is the key diagram that explanation is used for forming by dry-coated method tectal method to 19 (b).
Figure 20 is the schematic sectional view of variation instance of the transparent touch switch of explanation Figure 18.
Figure 21 illustrates when providing and do not provide nesa coating, the analog result that the difference in reflectivity between them changes.
Figure 22 illustrates when providing and do not provide nesa coating, the analog result that the difference in reflectivity between them changes.
Figure 23 is the schematic section of the transparent touch switch variation instance of explanation Figure 18.
Figure 24 is the schematic sectional view of explanation according to the electrostatic capacitive contact-making switch of four embodiment of the invention.
Figure 25 is the planimetric map of a part of the electrostatic capacitive contact-making switch of explanation Figure 24.
Figure 26 is the planimetric map of another part of the electrostatic capacitive contact-making switch of explanation Figure 24.
Figure 27 is the planimetric map of a part of variation instance of the electrostatic capacitive contact-making switch of explanation Figure 24.
Figure 28 is the planimetric map of another part of variation instance of the electrostatic capacitive contact-making switch of explanation Figure 24.
Figure 29 is the schematic sectional view of variation instance of the electrostatic capacitive contact-making switch of explanation Figure 24.
Figure 30 (a) is the amplification view of major part of the multiple variation in explanation impedance slit to 30 (c).
Figure 31 (a) and 31 (b) are the amplification views of major part of the multiple variation in explanation impedance slit.
Figure 32 (a) and 32 (b) are the amplification views of major part of the multiple variation in explanation impedance slit.
Figure 33 is the schematic section face figure of the variation instance of the described transparent planar body of explanation.
Description of reference numerals
101 transparent touch switch
1 first transparent planar body
2 second transparent planar bodies
11,21 transparency carriers
12,22 nesa coatings
13,23 end liner layers
14,24 external coatings
15 adhesive phases
16,26 overlayers
32,42 banded electrically conducting transparent members
33,43 banded transparent control members
34,44 insulation slits
35,45 impedance slits
36,46 isolate the slit
Embodiment
First embodiment
Hereinafter, first embodiment of the present invention is described with reference to the accompanying drawings.In order to make described structure be easier to understand, part enlarges or dwindles in the accompanying drawing each parts and therefore true ratio is not shown.
Fig. 1 is the schematic sectional view of explanation according to the transparent touch switch of first embodiment of the invention.Transparent touch switch 101 is electrostatic capacitive contact-making switches, it comprises first transparent planar body 1, wherein nesa coating 12 is formed on the transparency carrier 11 and second transparent planar body 2 by end liner layer 13, and wherein nesa coating 22 is formed on the transparency carrier 21 by end liner layer 23.First transparent planar body 1 and second transparent planar body 2 are attached to each other as follows by adhesive phase 15, described mode be nesa coating 12 and 22 toward each other.
Transparency carrier 11 and 21 is constructed like this, makes hard conating 112,112 and 212,212 be respectively formed at the front surface and the rear surface of substrate layer 111 and 211. Preferred substrates layer 111 and 211 is formed by high transparent material.The instantiation of preferred material comprises polyethylene terephthalate (PET), PEN (PEN), polyethersulfone (PES), polyetheretherketone (PEEK), polycarbonate (PC), polypropylene (PP), polyamide (PA), polyacrylic acid (PAC), epoxy resin, phenol resin, aliphatics cyclic polyolefin, transparent in the thermoplastic resin of norborene and similar flexible film; The layered product of two or more these resins; Glass plate etc. Substrate layer 111 and 211 preferably about 20 to 500 μ m of thickness and preferably about 3 to the 5 μ m of thickness of hard conating 112 and 212.In order to increase hardness, supporter can be attached to substrate layer 111 and 211.
End liner layer 13 is formed by the two-layer or more multi-layered layered product with different optical indexs with 23, and the layer that wherein has than low-refraction is respectively formed at nesa coating 12 and 22 sides to increase the transparency.
The examples of materials that is used for the layered product of end liner layer 13 and 23 comprises monox, titanium dioxide, tin oxide or the like.The example of preferred compositions comprises tin oxide/hafnia, monox/tin oxide, zinc oxide/stancic oxide, tin oxide/titanium dioxide or the like. End liner layer 13 and 23 can be by formation such as sputter, vacuum evaporation, electron beam evaporations.
The examples of materials that is used for nesa coating 12 and 22 comprises indium tin oxide (ITO), zinc paste, indium oxide, antimony-doped tin oxide, fluorine-doped tin oxide, aluminium-doped zinc oxide, potassium doping zinc-oxide, silicon doping zinc paste, zinc oxide/stancic oxide, indium oxide/tin oxide, zinc paste/indium oxide/magnesium oxide and metalloid oxide.These materials can use in the mode of combination.The example that is used to form the method for nesa coating 12 and 22 comprises sputter, vacuum deposition, ion plating and similar PVD method, CVD method, rubbing method, print process etc.Nesa coating 12 and 22 thickness normally about 10 to 50nm.
Shown in Fig. 2 and 3, each nesa coating 12 and 22 is formed a plurality of strip-shaped conductive member 12a that extend in parallel and the assembly of 22a.Arrange the strip-shaped conductive member 12a and the feasible intersection that is perpendicular to one another of 22a of nesa coating 12 and 22.Nesa coating 12 and 22 is connected to the external drive circuit (not shown) by the wired circuit (not shown) that is formed by conductive ink etc.Nesa coating 12 and 22 pattern are not limited to present embodiment, and can use multiple pattern, as long as can be detected with position contacting such as fingers.For example, shown in Figure 4 and 5, nesa coating 12 and 22 can have such structure, wherein a plurality of rhombus conductive member 12b are connected by linearity with 22b, wherein the connected direction intersection of rhombus conductive member 12b and 22b is the right angle in each nesa coating 12 and 22, do not overlap each other with rhombus conductive member 12b and 22b, see as planimetric map.
Carry out the patterning of nesa coating 12 and 22 in the following manner.At first, form the mask with reservation shape on the surface of nesa coating 12 and 22, wherein nesa coating 12 and 22 is arranged on transparency carrier 11 and 21 by end liner layer 13 and 23.Secondly, remove expose portion by the etching of using acid solution etc. and use the described mask of dissolving such as alkali lye subsequently.By adopting wherein nesa coating 12 and 22 is patterned to the method for reservation shape, can removes unnecessary nesa coating 12 and 22, keep whole end liner layer 13 and 23 simultaneously by etching.Yet described patterning method is not limited to this, and can use other known method. End liner layer 13 and 23 can be removed with unnecessary nesa coating 12 and 22.
First transparent planar body 1 in the transparent touch switch of present embodiment and second transparent planar body 2 comprise the external coating 14 and 24 that (forms nesa coating 12 and 22 on this surface) on the opposite face.The preferred material that is used for external coating 14 and 24 comprises monox, titanium dioxide, tin oxide etc.Particularly preferred material is the silicon tin-oxide.External coating 14 and 24 thickness normally about 10 are to 500nm and refractive index normally about 1.3 to 2.3.
Preferably the external coating 14 in first transparent planar body 1 is thicker and have a refractive index littler than nesa coating 12 than nesa coating 12.This is equally applicable to the external coating 24 of second transparent planar body 2.In other words, preferred external coating 24 has than bigger thickness of nesa coating 22 and the refractive index littler than nesa coating 22.If described external coating is made up of the silicon tin-oxide, can for example suitably control the refractive index of external coating 14 by changing the ratio between silicon and the tin.As mentioned above by selecting the thickness and the refractive index of external coating 14 and 24, can form and not form the part of nesa coating 12 and 22 same from the shape of the transmission of first transparent planar body 1 and second transparent planar body 2 and reflectance spectrum therein, make to reduce difference in the tone (deep or light).Therefore, nesa coating 12 in first transparent planar body 1 and second transparent planar body 2 and 22 pattern become not obvious, and this has improved visibility.
Specifically, because external coating 14 and 24 becomes thicker, the shape of the transmitted spectrum (or reflectance spectrum) in not having nesa coating 12 and 22 part is identical with the part that wherein provides nesa coating 12 and 22 gradually.Therefore,, make in two parts, that is,, can obtain excellent visibility having and not having spectral shape in two parts of nesa coating 12 and 22 basically identical that becomes by suitably selecting the thickness of external coating 14 and 24.For example, if external coating 14 and 24 is formed by silicon tin-oxide (having about 1.7 refractive index), preferred external coating 14 and 24 has 70 to 80nm thickness, described in the EXPERIMENTAL EXAMPLE of hereinafter describing.
As mentioned above, preferred external coating 14 and 24 refractive index are less than the refractive index of nesa coating 12 and 22.Yet,, can not obtain satisfied effect from external coating 14 and 24 if refractive index difference is too small.On the contrary, if the difference of refractive index is excessive, the reflection on the interface becomes excessive and transmittance tends to reduce.Consider this specific character, the difference of described refractive index preferably 0.03 to 0.4, and more preferably 0.1 to 0.3.
The example that is used to form the method for external coating 14 and 24 comprises sputter, vacuum evaporation, electron beam evaporation and similar dry-coated method.This method makes that forming the external coating 14 and 24 with homogeneous thickness on the surface of the nesa coating 12 of the exposed surface of end liner layer 13 and 23 and first transparent planar body 1 and second transparent planar body 2 and 22 becomes possibility.
Adhering to preferably between first transparent planar body 1 and second transparent planar body 2 carried out as follows, described mode be adhesive phase 15 between whole attaching surface to prevent to form air layer.Based on epoxy, can be used as adhesive phase 15 based on acryloyl group and similar normally used clear binder, and they can comprise by the transparent film formed core based on the resin of norborene.The thickness of adhesive phase 15 is 25 to 75 μ m normally, and refractive index normally 1.4 to 1.6.
The refractive index of preferred adhesive layer 15 is less than the refractive index of external coating 14 and 24.This arrangement makes the refractive index of nesa coating 12 (or 22), external coating 14 (or 24) and adhesive phase 15 diminish gradually with such order (that is, with them by the order of lamination).This makes that the shape of transmitted spectrum in the whole transparent touch switch between the part that provides and do not provide nesa coating 12 and 22 and reflectance spectrum is identical, thereby reduces the difference in the tone (deep or light).This makes that nesa coating 12 and 22 pattern in first transparent planar body 1 and second transparent planar body 2 are not obvious, and has improved visibility.
In having the transparent touch switch of said structure, the method that is used for detecting contact position is identical with the method for known electrostatic capacitive contact-making switch.Specifically, when with finger when any point contacts the front surface of first transparent planar body 1, the body capacitance ground connection of nesa coating 12 and 22 by contact position.Flow through the current value of nesa coating 12 and 22 at this moment by detection, can calculate the coordinate of described contact position.Preferred external coating 14 and 24 surface impedance value for example are not less than 1 * 10 enough greatly with the insulating property of acquisition as the satisfaction of electrostatic capacitive contact-making switch 12(Ω/).
In the transparent touch switch 101 of this first embodiment, can provide linear polarizing plate in the front side of first transparent planar body 1 (forming that side on the surface of nesa coating 12 relatively thereon).When linear polarizing plate was provided, transparency carrier 11 and 21 should be formed by the optical isotropy material.An oriented film that example is polyvinyl alcohol (PVA) (PVA) of linear polarizing plate, wherein iodine, dichromatic dye or similar double-colored pigment are adsorbed and are directed.Described linear polarizing plate can form by adhering to triacetyl acetate (TAC) film that plays the diaphragm function as follows, and described mode is that thus obtained oriented film is clipped between described triacetyl acetate (TAC) film.The optical isotropy material is those materials that do not have polarization for any incident light, for example, polycarbonate (PC), polyethersulfone (PES), polyacrylic acid (PAC), amorphous polyolefin resin, cyclic polyolefin resin, aliphatics cyclic polyolefin, norborene thermoplastic transparent resin, glass material or the like.The example that uses these materials to form the method for transparency carrier 11 and 21 comprises curtain coating and extrudes.
Compare with the situation when not providing linear polarizing plate, this arrangement can make the reflected light values that causes by visible light incident in described contact-making switch, reduce half or still less.This arrangement makes equally that nesa coating 12 and 22 is more not obvious and has improved the visibility of described contact-making switch.
Can be by linear polarizing plate and quarter wave plate be all adhered to, and the apparent surface (i.e. the back of the body surface of second transparent planar body 2) that this quarter wave plate all is attached to contact-making switch 101 gone up and the circular polarization parts are provided.Described quarter wave plate can be by being formed to give multiple elasticity by prolongations such as polyvinyl alcohol (PVA) (PVA), polycarbonate (PC), norborene thermoplastic resin, cyclic polyolefin resins.Preferred described linear polarizing plate all is attached on the described quarter wave plate, and described quarter wave plate has the adhesive phase that is formed by the material that can be used for adhesive phase 15, and described adhesive phase forms betwixt to prevent the mode that forms air layer.Similarly, also preferably described quarter wave plate is attached on the dorsal part of described second transparent planar body, described dorsal part has the adhesive phase of the material formation that can be used for adhesive phase 15, and described adhesive phase is therebetween to prevent that air layer from forming.In this case, preferred described quarter wave plate is arranged as follows, and described mode is the optical axis square crossing of optical axis and another quarter wave plate of a quarter wave plate.
Form the circular polarization parts by aforesaid mode, described reflected light of circular polarization and the internal reflection that reduces to be clipped between two quarter wave plates the contact-making switch in the part are possible, and this obtains satisfied low reflection characteristic.This arrangement makes that also nesa coating 12 and 22 is more not obvious and has improved visibility.Also can form transparency carrier 11 and 21 from quarter wave plate, and the linear polarizing plate of lamination thereon.
Embodiment
Explain the present invention based on embodiment and comparative example below, but scope of the present invention is not limited to these embodiment.
Embodiment
(5cm * 7cm) illustrates transmittance difference between the part that provides and do not provide nesa coating 12 in the transparent touch switch of structure with evaluation having Fig. 1 to two measuring samples shown in preparation Fig. 6 (a) and 6 (b).Sample A shown in Fig. 6 (a) is the layered product with the such order lamination of transparency carrier 11, end liner layer 13, external coating 14 and adhesive phase 15 that nesa coating wherein is not provided.Transparency carrier 11 forms as follows, and described mode is formed on the front surface and rear surface by the film formed substrate layer 111 of 200 μ m thickness PET for the two-layer hard conating 112 and 112 that will have 3 to 5 μ m thickness.End liner layer 13 forms as follows, and described mode is layered on the transparency carrier 11 with this order for silicon oxide layer that will have 30nm thickness and the silicon tin oxide layer with 70nm thickness.External coating 14 with 1.7 refractive indexes obtains with the thickness with 70nm by the sputtered silicon tin-oxide.Adhesive phase 15 is formed to have the thickness of 20 to 30 μ m by acrylic adhesive (the P043FP product of LintecCorporation).
The sample B that Fig. 6 (b) illustrates forms as follows, and described mode will be for being provided at by the nesa coating with 30nm thickness 12 that ITO forms between the end liner layer 13 and external coating 14 of the sample A shown in Fig. 6 (a).Nesa coating 12 has 1.95 refractive index.
From the front surface measuring samples A of transparency carrier 11 and the transmitted spectrum of B.Spectrometer (U-3310, Hitachi, the product of Ltd.) is used for the measurement of spectral transmittance.Shown in Fig. 7 (a), the transmitted spectrum of sample A and B is similar in two parts.
In the transparent touch switch of Fig. 1, the thickness setting with external coating 14 is 70nm and uses the three-color fluorescent lamp of 24W to shine as mentioned above, changes illumination angle simultaneously.Almost do not observe the shape of described conductive pattern, and obtain gratifying result.
Subsequently, implementation of class is similar to above-mentioned EXPERIMENTAL EXAMPLE, and wherein the thickness of the external coating 14 of sample A and B is set to 80nm.Shown in Fig. 7 (b), described transmitted spectrum is slightly different at high wavelength place, but basic identical at low wavelength place.Near the 550nm wavelength transmittance difference is very little, its appreciable impact visibility.Equally in this case, the result of described contact-making switch visualization is outstanding.
Comparative example
As the comparative example of the foregoing description, prepare sample C and D as follows, described mode is not for to provide external coating 14 in the structure of sample A shown in Fig. 6 (a) and 6 (b) and B.Adopt method measuring samples C same in the above-mentioned example and the transmitted spectrum of D.As shown in Figure 8, the shape of transmitted spectrum has very big difference, especially at low wavelength place.
The visualization result of described contact-making switch is: being equipped with the sample D of nesa coating to compare does not have the sample of nesa coating C to have the tone that slightly is purple.As the difference in the reflected light tone, can clearly observe and not have the difference between the described nesa coating.
Second embodiment
Below with reference to description of drawings second embodiment of the present invention.In order to make described structure be easier to understand, part enlarges or dwindles in the accompanying drawing each parts and therefore true ratio is not shown.
Fig. 9 is the schematic sectional view of explanation according to the transparent touch switch of second embodiment of the invention.Transparent touch switch 101 is electrostatic capacitive contact-making switches, and it comprises: first transparent planar body, 1, the first transparent planar body 1 is by providing nesa coating 12 to form on transparency carrier 11 through end liner layer 13; With second transparent planar body, 2, the second transparent planar bodies 2 by on transparency carrier 21, providing nesa coating 22 to form through end liner layer 23.First transparent planar body 1 and second transparent planar body 2 are attached to each other as follows by adhesive phase 15, described mode be nesa coating 12 and 22 toward each other.
By on the preceding and rear surface of substrate layer 111 and 211, providing hard conating 112,112 and 212,212 to form transparency carrier 11 and 21.Preferred described substrate layer 111 and 211 is formed by high transparent material.Instantiation comprises polyethylene terephthalate (PET), PEN (PEN), polyethersulfone (PES), polyetheretherketone (PEEK), polycarbonate (PC), polypropylene (PP), polyamide (PA), polyacrylic acid (PAC), epoxy resin, phenol resin, aliphatics cyclic polyolefin, norborene thermoplastic transparent resin, silicone cross-linked acrylic acid organic siliconresin and similar flexible film; The layered product of two or more these materials; Glass plate; Deng. Preferred substrates layer 111 and 211 thickness are about 20 to 500 μ m, and hard conating 112 and 212 thickness are at about 3 to 5 μ m.For hardness being provided for substrate layer 111 and 211, can provide support body.
Permanance and stickability in order to strengthen end liner layer 13 and 23 preferably are provided at hard conating 112 and 212 on the front and rear surfaces of substrate layer 111 and 211.Yet, can also be by hard conating 112 and 212 or do not provide hard conating 112 and 212 to form transparency carrier 11 and 21 be provided on only surface of substrate layer 111 and 211.
End liner layer 13 and 23 is made up of the layered product of low- index layer 13a and 23a and high refractive index layer 13b and 23b, and wherein high refractive index layer 13b and 23b have than low-index layer 13a and the higher refractive index of 23a.Nesa coating 12 and 22 is formed on low-index layer 13a and the 23a side to improve the transparency.
Be formed for end liner layer 13 and 23 layered product the layer examples of materials comprise monox, titanium dioxide, tin oxide or the like.The example of preferred compositions comprises tin oxide/hafnia, monox/tin oxide, zinc oxide/stancic oxide, tin oxide/titanium dioxide or the like.From the viewpoint of visibility, particularly preferred combination is by monox (SiO n, n=1.7 to 2.0) and the low-index layer 13a that forms and 23a and the high refractive index layer 13b and the 23b that form by the silicon tin-oxide.Described end liner layer 13 and 23 can wait by sputter, vacuum evaporation, electron beam evaporation and form.
The analog result of the acquisition of describing hereinafter according to the present inventor, preferred high refractive index layer 13b and 23b are thinner than low-index layer 13a and 23a.This arrangement can make that the pattern form that is formed on end liner layer 13 and 23 lip- deep nesa coatings 12 and 22 is not obvious, and has improved the visibility of described contact-making switch.The thickness of preferred high refractive index layer 13b and 23b is 10 to 25nm.In this case, the thickness of preferred low- index layer 13a and 23a is 25 to 45nm.
The examples of materials that is used for nesa coating 12 and 22 comprises indium tin oxide (ITO), zinc paste, indium oxide, antimony-doped tin oxide, fluorine-doped tin oxide, aluminium-doped zinc oxide, potassium doping zinc-oxide, silicon doping zinc paste, zinc oxide/stancic oxide, indium oxide/tin oxide, zinc paste/indium oxide/magnesium oxide and metalloid oxide.These materials can use with the form of combination.Nesa coating 12 and 22 can be by sputter, vacuum deposition, ion plating and similarly formation such as PVD method, CVD method, rubbing method, print process.
As in the first embodiment, nesa coating 12 and 22 forms a plurality of strip-shaped conductive member 12a that extend in parallel shown in Fig. 2 and 3 and the assembly of 22a respectively.Arrange the described strip-shaped conductive member 12a and the feasible intersection that is perpendicular to one another of 22a of nesa coating 12 and 22.Described nesa coating 12 and 22 is connected to the external drive circuit (not shown) by the wired circuit (not shown) that is formed by conductive ink etc.Nesa coating 12 and 22 pattern are not limited to the pattern of present embodiment, and can use multiple pattern, as long as can be detected with position contacting such as fingers.For example, shown in Figure 4 and 5, nesa coating 12 and 22 can have following structure.A plurality of rhombus conductive member 12b are connected by linearity with 22b, and wherein the closure of rhombus conductive member 12b in nesa coating 12 and 22 and 22b is intersected and to be the right angle, and rhombus conductive member 12b and 22b do not overlap each other, as seeing in the planimetric map.
Carry out the patterning of nesa coating 12 and 22 in the following manner.At first, form the mask with reservation shape on the surface of nesa coating 12 and 22, wherein nesa coating 12 and 22 is arranged on transparency carrier 11 and 21 by end liner layer 13 and 23.Secondly, the etching by using acid solution etc. and use the described mask of dissolving such as alkali lye to remove described expose portion subsequently.By using wherein nesa coating 12 and 22 is patterned to the method for reservation shape, can removes unnecessary nesa coating 12 and 22, keep whole end liner layer 13 and 23 simultaneously by etching.Yet described patterning method is not limited to this, and also can use other known method.
Nesa coating 12 and 22 thickness normally about 10 to 50nm.In order to make that the pattern form of nesa coating 12 and 22 is not obvious and improve visibility, preferably make nesa coating 12 and 22 thin as far as possible.Yet if nesa coating 12 and 22 is thin excessively, becoming is difficult to obtain the permanance and the weatherability of the good crystallinity of described film, satisfaction, and therefore preferred thickness is about 10 to 25nm.
Adhering to preferably between first transparent planar body 1 and second transparent planar body 2 carried out in the following way, and described mode is that adhesive phase 15 is positioned on the whole attaching surface to stop the formation of air layer.Adhesive phase 15 can be by based on epoxy, form based on acryloyl group and similar normally used clear binder, and can comprise the core of forming by based on the hyaline membrane of the resin of norborene.Adhesive phase 15 has the thickness of 25 to 75 μ m and 1.4 to 1.6 refractive index usually.
The analog result of the acquisition of describing hereinafter according to the present inventor by suitably selecting the refractive index of adhesive phase 15, can further be improved the visibility of transparent touch switch 101.Described simulation is based on that following hypothesis carries out.By at the substrate layer that forms by the PET film (thickness: 188 μ m, refractive index: hard conating (thickness: 5 μ m, refractive index: 1.52) form transparency carrier 11 and 21 is provided on the front and rear surfaces 1.65).In end liner layer 13 and 23, by silicon tin oxide film (thickness: 25nm, refractive index: 1.7) form high refractive index layer and by silicon oxide film (thickness: 30nm, refractive index: 1.43) form low-index layer.Nesa coating 12 and 22 is by ITO film (thickness: 30nm, refractive index: 1.95) form.The thickness of adhesive phase 15 is 25 μ m, and the refractive index of adhesive phase 15 changes as parameter.Calculate reflectivity difference (%) between the part that wherein forms nesa coating 12 and 22 and the part that does not wherein form nesa coating 12 and 22 (that is, overlayer 16 and 26 parts that form) based on described simulation.Use film design software (deriving from Cybernet Systems Co., the Optas-Film of Ltd.) to calculate reflectivity.Figure 10 has shown the absolute value of the reflectivity difference (%) of using this simulation acquisition.In this simulation, the thickness of supposing transparency carrier 11 and 21, adhesive phase 15 etc. carries out the calculating of reflectivity, with respect to the end liner layer 13 and 23 with nanometer grade thickness, nesa coating 12 and 22 and similar parts, these thickness are very large, are tending towards ∞ (infinity).
The not clear dominance of nesa coating 12 and 22 pattern form be with the part that wherein forms and do not form nesa coating 12 and 22 between the reflection differences extent value be relevant.The absolute value of reflectivity difference more little (wavelength: about 400 to 800nm) in visible region generally speaking, described pattern form becomes not obvious more and can obtain better visibility.As shown in figure 10, along with the refractive index of adhesive phase 15 becomes bigger, the absolute value of reflectivity difference becomes littler.Therefore, from the visibility viewpoint, it is preferred making the refractive index of adhesive phase 15 bigger.
The thickness of getting nesa coating 12 and 22 is 15nm, 20nm and 25nm, simulation form therein with the part that does not form nesa coating 12 and 22 (promptly, form the part of overlayer 16 and 26) between reflectivity difference (%), change refractive index simultaneously as the adhesive phase 15 of parameter.Figure 11 to 13 has shown analog result.Notice that Figure 11 has shown that the thickness when nesa coating 12 and 22 is the result of 15nm, Figure 12 has shown that working as described thickness is the result of 20nm, and Figure 13 has shown that working as described thickness is the result of 25nm.
Table 1 has shown the absolute value of the reflectivity difference that derives from the analog result shown in Figure 10 to 13 under the concrete refractive index of adhesive phase 15, wherein input optical wavelength is 550nm.
Table 1
The refractive index of adhesive phase 15 The thickness of nesa coating
15nm 20nm 25nm 30nm
1.52 0.20 0.48 0.74 0.98
1.60 0.15 0.37 0.58 0.76
1.65 0.13 0.31 0.48 0.63
1.70 0.10 0.24 0.39 0.51
1.75 0.07 0.19 0.30 0.39
1.80 0.05 0.13 0.21 0.29
As from Figure 11 to 13 and table 1, knowing as can be known, as get the identical analog result of 30nm based on nesa coating 12 and 22 thickness, when the thickness of nesa coating 12 and 22 is set to 15nm, 20nm or 25nm, along with the refractive index of adhesive phase 15 becomes bigger, the absolute value of described reflectivity difference becomes littler.Therefore, from the visibility viewpoint, it is preferred making the refractive index of adhesive phase 15 bigger.
As from table 1 clear as can be known, when the thickness of nesa coating 12 and 22 20 in the scope of 25nm the time, having refractive index by use is to be not less than 1.6 adhesive phase 15, can make the absolute value of described reflectivity difference less than about 0.5.Therefore, having refractive index with use by the thickness that nesa coating 12 and 22 are set in the transparent touch switch 101 with structure as shown in Figure 9 in 20 to 25nm scopes is to be not less than 1.6 adhesive phase 15, can obtain to have the transparent touch switch 101 of excellent visibility, wherein nesa coating 12 and 22 pattern form are not obvious.
Also clear as can be known from data shown in the table 1, when the thickness of nesa coating 12 and 22 is 25 in the 30nm scope time, this is preferred from permanance viewpoint angle, having refractive index by use is to be not less than 1.7 adhesive phase 15, and the absolute value of described reflectivity difference can be reduced to less than about 0.5.Therefore, in transparent touch switch 101 with structure as shown in Figure 9, be 25 to 30nm and use that to have refractive index be to be not less than 1.7 adhesive phase 15 by the thickness that nesa coating 12 and 22 are set, may obtain such transparent touch switch 101, wherein nesa coating 12 and 22 pattern form are not obvious, the excellent durability that keeps nesa coating 12 and 22 simultaneously, and obtain excellent visibility.
In having the transparent touch switch of said structure, the method that is used for detecting contact position is identical with the method for known electrostatic capacitive contact-making switch.Specifically, contact first transparent planar body, 1 front side at any point, nesa coating 12 and 22 body capacitance ground connection by contact position with finger etc.Flow through the current value of nesa coating 12 and 22 at this moment by detection, can calculate the coordinate of contact position.
In the transparent touch switch 101 of this second embodiment, linear polarizing plate can be provided at the front side (this surface with its on form the surperficial relative of nesa coating 12) of first transparent planar body 1.When described linear polarizing plate was provided, transparency carrier 11 and 21 should be formed by the optical isotropy material.The example that is used for the Available Material of described linear polarizing plate comprises polyvinyl alcohol (PVA) (PVA) oriented film, and wherein iodine, dichromatic dye or similar double-colored pigment are adsorbed and are directed.Described linear polarizing plate can adhere to as follows by triacetyl acetate (TAC) film that will play the diaphragm function and forms, and described mode is that thus obtained oriented film is clipped between described triacetyl acetate (TAC) film.The optical isotropy material is those materials that do not show polarization characteristic for any incident light, for example, polycarbonate (PC), polyethersulfone (PES), polyacrylic acid (PAC), amorphous polyolefin resin, cyclic polyolefin resin, aliphatics cyclic polyolefin, norborene thermoplastic transparent resin, glass material or the like.Transparency carrier 11 and 21 can or be extruded these materials by curtain coating and form.
When not providing described polarizing plate, such structure can reduce the catoptrical amount that caused by the visible light that enters described contact-making switch to approximately less than its half.In addition, such layout makes that nesa coating 12 and 22 is more not obvious and has improved visibility.
Can also be by linear polarizing plate all be attached on the quarter wave plate, and quarter wave plate all is attached on the apparent surface (that is the back of the body surface of second transparent planar body 2) of contact-making switch 101 the circular polarization parts are provided.Described quarter wave plate can form to give multiple elasticity by extending the film that is formed by polyvinyl alcohol (PVA) (PVA), polycarbonate (PC), norborene thermoplastic resin, cyclic polyolefin resin etc.Preferably described linear polarizing plate all is attached on the quarter wave plate, described quarter wave plate has the adhesive phase that the material by can be used for adhesive phase 15 betwixt forms as follows, and is described trans for preventing the formation of air layer.Similarly, also preferred described quarter wave plate is attached on the dorsal part of second transparent planar body, and wherein the adhesive phase that is formed by the material that can be used for adhesive phase 15 is therebetween to prevent that air layer from forming.In this case, preferred described quarter wave plate is arranged as follows, and described mode is the optical axis square crossing with the optical axis of a quarter wave plate and another quarter wave plate.
Form the circular polarization parts by aforesaid mode, the described reflected light of possible circular polarization and reduce to be clipped between two quarter wave plates the internal reflection of the contact-making switch in the part, this obtains satisfied low reflection characteristic.Such arrangement also makes nesa coating 12 and 22 more not obvious and improved visibility.Also can by quarter wave plate and thereon the linear polarizing plate of lamination form transparency carrier 11 and 21.
In this second embodiment, the present invention is applied to transparent electrostatic capacitive contact-making switch, and wherein two transparent planar bodies adhere to by adhesive phase.Yet, also the present invention can be used for matrix type resistance film contact-making switch, wherein two transparent planar bodies adhere to by air layer.
Embodiment
Describe the present invention in detail based on embodiment below.Yet the present invention is not limited to these embodiment.
EXPERIMENTAL EXAMPLE 1:
At first, directly on transparency carrier, to form the optimum thickness of nesa coating described in the structure of nesa coating in order determining the end liner layer wherein is not provided, to obtain wherein to form the electrically conducting transparent membrane portions and wherein do not form reflectivity difference (%) between the electrically conducting transparent membrane portions by simulation.
By at the substrate layer that forms by the PET film (thickness: 188 μ m, refractive index: hard conating (thickness: 5 μ m, refractive index: 1.52) obtain described transparency carrier is provided on the front and rear surfaces 1.65).Described nesa coating is by ITO film (refractive index: 1.95) form.On the nesa coating side of described transparency carrier, form the adhesive phase (thickness: 25 μ m, refractive index: 1.52) that forms by acryl resin.Use film design software (deriving from Cybernet Systems Co., the Optas-Film of Ltd.) to calculate reflectivity.In this calculates, ignore the absorption in described pet layer etc.Figure 14 has shown reflectivity (%) difference that obtains as parameter by the thickness that uses nesa coating in this structure.
The not clear dominance of the pattern form of described nesa coating is relevant with the reflectivity difference between the part that wherein forms and do not form nesa coating.Generally speaking, the absolute value of reflectivity difference more little (wavelength: about 400 arrive 800nm) in visible region, it is not obvious more that described pattern form becomes, and can obtain better visibility.As shown in figure 14, along with described nesa coating becomes thinner, the absolute value of reflectivity difference becomes littler, and therefore considers visibility, and it is preferred making nesa coating thinner.Yet for the crystallinity, permanance and the weatherability that increase described nesa coating, certain thickness is necessary, and therefore the thickness of described nesa coating preferably 10 arrives 25nm, and the best is about 15nm.
EXPERIMENTAL EXAMPLE 2:
Determine to form the low-index layer of described end liner layer and the optimum thickness of high refractive index layer in described structure (shown in Fig. 9), wherein the end liner layer is formed between transparency carrier and the nesa coating.The supposition of the refractive index of the thickness of described transparency carrier and refractive index and described nesa coating is identical with in the EXPERIMENTAL EXAMPLE 1 those, and determines that based on the result of experiment embodiment 1 thickness of described nesa coating is 15nm.Adhesive phase is formed on the front side of described nesa coating, and the thickness that wherein also makes described adhesive phase and refractive index are identical with in the experiment embodiment 1 those.The layered product of the high refractive index layer that described end liner layer is formed the low-index layer that formed by the monox with refractive index 1.43 and form by silicon tin-oxide with refractive index 1.7.
In this structure, the thickness of described low-index layer is set to 30nm, the thickness of described high refractive index layer is changed as parameter, and obtain the formation part of nesa coating wherein by simulation subsequently and do not form reflectivity difference between the part.Figure 15 has shown described result.
As shown in figure 15, when the thickness of described high refractive index layer is 0 (, do not have high refractive index layer), reflectivity difference absolute value in the low wavelength side (about 400 to 500nm) of visible region and pace of change become bigger and this feasible visibility that is difficult to obtain excellence.On the contrary, when the thickness of described high refractive index layer was 10 to 20nm, the absolute value of reflectivity difference and rate of change were very little in whole visible region, and obtained excellent visibility.When the thickness of described high refractive index layer becomes greater than as the 30nm of the thickness of described low index of refraction layer the time, the absolute value of described reflectivity difference and rate of change tend to increase once more, and this tends to reduce visibility.
Subsequently, the thickness of getting described high refractive index layer is 15nm, and the thickness of described low-index layer changes the reflectivity difference between obtaining wherein nesa coating formation and form partly by simulation as parameter.Figure 16 shows the result.
As shown in figure 16, when the thickness of described low-index layer is 0 (, do not have low-index layer), reflectivity difference absolute value and pace of change in the low wavelength side (about 400 to 500nm) of visible region become bigger, and this feasible visibility that is difficult to obtain excellence.On the contrary, along with described low-index layer becomes thicker, it is littler that the absolute value of described reflectivity difference and rate of change tend to become.When described low-index layer became thicker than 15nm, promptly thicker than described high refractive index layer, the absolute value of described reflectivity difference and rate of change all became gratifying little, and this has obtained excellent visibility.When the thickness of described low-index layer reached 50nm, the absolute value of described reflectivity difference was very little, but became bigger at the rate of change of the reflectivity difference of the low wavelength side of visible region.This has little by little reduced visibility.
Based on these analog results, become is clear that very much, at the thickness of high refractive index layer described in the described end liner layer preferably less than the thickness of described low-index layer.More particularly, the thickness of described high refractive index layer preferably 10 arrives 25nm, and in this case, the thickness of described low-index layer preferably 25 arrives 45nm.
Based on these analog results, make the test model of transparent planar body with high index of refraction layer thickness 15nm and low-refraction layer thickness 35nm.Formed transparent planar body obtains excellent visibility under the situation that does not have visible described conductive layer pattern shape, and has therefore confirmed the validity of above-mentioned analog result.
EXPERIMENTAL EXAMPLE 3
Even when not being the variation in thickness of layer of end liner layer, in the end liner layer that obtains in EXPERIMENTAL EXAMPLE 2, the preferred thickness of described low-index layer and described high refractive index layer has trend much at one.For example, even nesa coating becomes thicker in EXPERIMENTAL EXAMPLE 2, the scope of the preferred thickness of described low-index layer and described high refractive index layer does not almost change, but when described thickness was not in these preferable range, visibility reduced significantly.Figure 17 has shown when (thickness of low-index layer: 30nm) thickness that uses described high refractive index layer is as parameter and the reflectivity difference of the thickness of nesa coating when changing from 15 to 20nm in the structure of EXPERIMENTAL EXAMPLE 2.
One or two hard conating is not provided in the structure on the front and rear surfaces of substrate layer of described transparency carrier therein, and compare those of EXPERIMENTAL EXAMPLE 2 of the high refractive index layer in described end liner layer and the preferred thickness range of low-index layer tend to enlarge.Even when the end liner layer only is made up of low-index layer and is not provided high refractive index layer, also can obtain visibility to a certain degree.
The 3rd embodiment
Below with reference to description of drawings the 3rd embodiment of the present invention.In order to make described structure be easier to understand, part enlarges or dwindles in the accompanying drawing each parts and therefore true ratio is not shown.
Figure 18 is the schematic sectional view of explanation according to the transparent touch switch of third embodiment of the invention.This transparent touch switch 101 is electrostatic capacitive contact-making switches, it comprises: have first transparent planar body 1 of a lip-deep patterning nesa coating 12 that is formed on transparency carrier 11 and have second transparent planar body 2 of a lip-deep patterning nesa coating 22 that is formed on transparency carrier 21.First transparent planar body 1 and second transparent planar body 2 are attached to each other as follows by adhesive phase 15, described mode be nesa coating 12 and 22 toward each other.
Transparency carrier 11 and 21 is structures in this wise, makes hard conating 112,112 and 212,212 be respectively formed on the front surface and rear surface of substrate layer 111 and 211. Preferred substrates layer 111 and 211 is formed by high transparent material.The instantiation of preferred material comprises polyethylene terephthalate (PET), PEN (PEN), polyethersulfone (PES), polyetheretherketone (PEEK), polycarbonate (PC), polypropylene (PP), polyamide (PA), polyacrylic acid (PAC), epoxy resin, phenol resin, aliphatics cyclopolyolefin, transparent in the thermoplastic resin of norborene and similar flexible film; The layered product of the resin that two or more are such; Glass plate etc. Substrate layer 111 and 211 preferably about 20 to 500 μ m of thickness, hard conating 112 and 212 preferably about 3 to 5 μ m of thickness.In order to increase rigidity, supporter can be attached to substrate layer 111 and 211.
The examples of materials that is used for nesa coating 12 and 22 comprises indium tin oxide (ITO), indium oxide, antimony-doped tin oxide, fluorine-doped tin oxide, aluminium-doped zinc oxide, potassium doping zinc-oxide, silicon doping zinc paste, zinc oxide/stancic oxide, indium oxide/tin oxide, zinc paste/indium oxide/magnesium oxide, zinc paste and metalloid oxide.These materials can use separately or use in the mode of combination.
Can also use as the compound substance that is used for the material of nesa coating 12 and 22, wherein carbon nano-tube, carbon nanohorn, carbon nanocoils, carbon nano-fiber, graphite fiber and similar ultra-thin conductive carbon fibre are arranged in the polymeric material of the function that plays cementing agent.The example of available polymeric material comprises (PEDOT) and similarly conducting polymer of polyaniline, polypyrrole, polyacetylene, polythiophene, polyhenylene ethenylidene, polyphenylene sulfide, poly-(to penylene), poly-(heterocycle ethenylidene), poly-(3, the 4-ethene dioxythiophene).Can use non-conductive polymer for example polyethylene terephthalate (PET), PEN (PEN), polyethersulfone (PES), polyetheretherketone (PEEK), polycarbonate (PC), polypropylene (PP), polyamide (PA), polyacrylic acid (PAC), polyimide, epoxy resin, phenol resin, aliphatics cyclic polyolefin, norborene thermoplastic transparent resin and similar non-conductive polymer equally.
Particularly, when by carbon nano-tube being dispersed in the carbon nano tube compound material that obtains in the non-conductive polymer material when being used as the material that is used for nesa coating 12 and 22, because carbon nano-tube as thin as a wafer, usually have about 0.8 (promptly to the diameter of 1.4nm, about 1nm), by one by one in described non-conductive polymer material or a branch of described carbon nano-tube of a branch of dispersion that connects, can reduce the obstruction of the light transmission that causes by carbon nano-tube.This is preferred, so that obtain the transparency of nesa coating 12 and 22 reliably.
The example that is used to form nesa coating 12 and 22 methods comprises sputter, vacuum deposition, ion plating and similar PVD method, CVD method, rubbing method, print process etc.Described nesa coating 12 and 22 thickness approximately are 10 to 50nm usually.
Shown in Fig. 2 and 3, each nesa coating 12 and 22 is formed a plurality of strip-shaped conductive member 12a that extend in parallel and the assembly of 22a.Arrange the strip-shaped conductive member 12a and the feasible intersection that is perpendicular to one another of 22a of nesa coating 12 and 22.Nesa coating 12 and 22 is connected to the external drive circuit (not shown) by the wired circuit (not shown) that is formed by conductive ink etc.Nesa coating 12 and 22 pattern are not limited to the pattern of present embodiment, and can use multiple pattern, as long as wait the point of contact can be detected with finger.For example, shown in Figure 4 and 5, nesa coating 12 and 22 can have such structure, wherein a plurality of rhombus conductive member 12b are connected by linearity with 22b, wherein in each nesa coating 12 and 22, direction that rhombus conductive member 12b is connected with 22b is intersected and is the right angle, and rhombus conductive member 12b and 22b do not overlap each other, as seeing in the planimetric map.
By on the surface of the nesa coating 12 of transparency carrier 11 and 21 and 22, forming mask with reservation shape, remove expose portion by the etching of using acid solution etc., use alkali lye to wait subsequently to dissolve described mask and can carry out the patterning of nesa coating 12 and 22.Yet the method for described patterning is not limited thereto, and can use any known method.
On a surface (forming nesa coating 12 and 22 on this surface) according to the transparency carrier 11 of first transparent planar body 1 of the transparent touch switch of the 3rd embodiment and second transparent planar body 2 and 21, do not form therein among the expose portion 11a and 21a of nesa coating 12 and 22, form overlayer 16 and 26 to cover expose portion 11a and 21a.Form overlayer 16 and 26, make become basically flush with nesa coating 12 and 22 of its surface.The examples of materials that is used for overlayer 16 and 26 comprises silicon tin-oxide, monox, titanium dioxide, tin oxide, cerium oxide, niobium pentaoxide, tantalum pentoxide, zirconia; Zirconia/monox, zirconia/tin oxide, zirconia/titanium dioxide and similar composite oxides etc.Especially, the silicon tin-oxide is preferred.
The refractive index of overlayer 16 and 26 refractive index and nesa coating 12 and 22 is identical and can suitably control, and for example, if described overlayer is formed by the silicon tin-oxide, carries out described control by the ratio that changes silicon and tin.Here, " overlayer 16 is identical with the refractive index of nesa coating 12 and 22 with 26 refractive index " is meant that not only the refractive index of the refractive index of overlayer 16 and 26 and nesa coating 12 and 22 is in full accord, and comprise when overlayer 16 and 26 and nesa coating 12 and 22 between refractive index difference reach the situation of the unconspicuous degree of pattern form that can make nesa coating 12 and 22.Specifically, overlayer 16 and 26 and nesa coating 12 and 22 between the absolute value of refractive index difference preferably be no more than 0.08, and more preferably no more than 0.03.
If select carbon nano tube compound material as the material that is used for nesa coating 12 and 22, because the refractive index of described carbon nano tube compound material is less than the refractive index of indium tin oxide (ITO), promptly, the refractive index of carbon nano tube compound material be about 1.6 and the refractive index of indium tin oxide be about 1.9 to 2.0, the selection with material that is used for overlayer 16 and 26 of the refractive index that is equivalent to nesa coating 12 and 22 refractive indexes becomes easy.
As mentioned above, by selecting the shape and the refractive index of overlayer 16 and 26, might make and form and not have in the part of formation at nesa coating 12 and 22, the transmitted spectrum of first transparent planar body 1 and second transparent planar body 2 and the shape of reflectance spectrum are substantially the same, thereby reduce the difference of tone (deep or light).Therefore, in first transparent planar body 1 and second transparent planar body 2, can make that the pattern form of nesa coating 12 and 22 is not obvious, and can improve visibility.
The example that is used to form the method for overlayer 16 and 26 comprises sputter, vacuum evaporation, electron beam evaporation and similar dry-coated method.Explanation uses this dry-coated method to form the concrete grammar of overlayer 16 and 26 below.At first, shown in Figure 19 (a), the mask 50 that will have a desired pattern shape is formed on the surface of transparency carrier 11 (21) of nesa coating 12 (22).Secondly, the expose portion 51 that does not form the nesa coating 12 (22) of mask 50 on it is removed to form expose portion 11a (21a) (Fig. 9 (b)) by etching.The 3rd, will be used for described tectal material by dry-coated method and be applied on the expose portion 11a (21a) and the top of mask 50.At this moment, be formed on the expose portion 11a (21a) tectal thickness basically with the thickness identical (Figure 19 (c)) of nesa coating 12 (22).Subsequently, by removing mask 50, the overlayer 16 (26) that flushes with described nesa coating 12 (22) can be formed on expose portion 11a (21a) and go up (Figure 19 (d)) basically.By serigraphy, photogravure, excellent coating, spin coating, mould coating, spraying or similarly wet coating process, described tectal material be will be used for and nesa coating 12 and 22 and expose portion 11a and 21a will be applied to as follows, described mode for nesa coating 12 and 22 and expose portion 11a and 21a cover fully, afterwards, carry out etching and make overlayer 16 and 26 the surface and the flush of nesa coating 12 and 22 on the win transparent planar body 1 and second transparent planar body 2.
Adhering to preferably between first transparent planar body 1 and second transparent planar body 2 carried out in the following way, and described mode is that adhesive phase 15 is positioned at the feasible formation that can stop air layer of whole attaching surface.Adhesive phase 15 based on can be by epoxy, form based on acryloyl group and similar normally used clear binder, and can comprise by transparent film formed core based on the resin of norborene.The thickness of adhesive phase 15 is 25 to 100 μ m normally.
In having the transparent touch switch of said structure, the method that is used for detecting contact position is identical with the method for known electrostatic capacitive contact-making switch.Specifically, wait any point of contact first transparent planar body 1 front side, nesa coating 12 and 22 body capacitance ground connection by contact position with finger.Flow through the current value of nesa coating 12 and 22 at this moment by detection, can calculate the coordinate of contact position.Preferred external coating 14 and 24 surface impedance value for example are not less than 1 * 10 enough greatly with the insulating property of acquisition as the satisfaction of electrostatic capacitive contact-making switch 12(Ω/).
The 3rd embodiment of the present invention has been described above, yet concrete structure of the present invention is not limited to the 3rd embodiment.For example, as shown in figure 20, in first transparent planar body 1 and second transparent planar body 2, can provide external coating 14 and 24 to cover nesa coating 12 and 22 and the surface of overlayer 16 and 26.Form external coating 14 and 24 to have smooth surperficial 14a and 24a fully.By using this structure, keep the pattern form of nesa coating 12 and 22 not obvious simultaneously, might protect the nesa coating 12 and 22 of first transparent planar body 1 and second transparent planar body 2.Preferred external coating 14 and 24 surface impedance value be the insulation characterisitic to obtain to be satisfied with greatly enough, makes it can be used as the suitable operation of electrostatic capacitive contact-making switch, for example is not less than 1 * 10 12(Ω/).
The example that is used to form external coating 14 and 24 methods comprises sputter, vacuum evaporation, electron beam evaporation and similar dry-coated method; And serigraphy, photogravure, rod are coated with, spin coating, mould are coated with, spray and the similarly wet method that is coated with.
When being used for external coating 14 and 24 material and for example being used for those of overlayer 16 and 26 when identical, can form overlayer 16 and 26 and external coating 14 and 24 simultaneously by serigraphy etc.This makes transparent planar body 1 and 2 form in efficient mode.Also can use the material that is different from overlayer 16 and 26 to form external coating 14 and 24.
According to carrying out Simulation result by the present inventor, external coating 14 and 24 thickness preferably from about 10nm to about 30nm, perhaps be not less than 1 μ m, wherein external coating thickness is that about 10nm is a minimum executable film thickness under the sputtered film situation.The following describes the details of described simulation.By the substrate layer that forms by the PET film (thickness: 188 μ m, refractive index: form hard conating (having 5 μ m thickness and 1.52 refractive indexes) on the front and rear surfaces 1.65) thus obtain transparency carrier 11 and 21.Nesa coating 12 and 22 forms (thickness: 30nm, refractive index: 1.95) by the ITO film.Overlayer 16 and 26 forms (thickness: 30nm, refractive index: 1.95) by the silicon tin-oxide.Adhesive phase 15 forms (thickness: 25 μ m, refractive index: 1.52) by acryl resin.The refractive index of described external coating is 1.9, and the thickness of described external coating changes as parameter.When changing this parameter, simulation forms the part of nesa coating 12 and 22 and does not form the difference (%) of reflectivity between the part of nesa coating 12 and 22 (being overlayer 16 and 26 parts that form).Use film design software (deriving from Cybernet Systems Co., the Optas-Film of Ltd.) to calculate described reflectivity.Figure 21 and 22 has shown the reflectivity difference (%) that obtains by this simulation.Figure 21 has shown that the thickness supposition when external coating 14 and 24 is nano level situation, and Figure 22 has shown when its thickness to suppose it is the situation of μ m level.
The not clear dominance of the pattern form of described nesa coating is relevant with the reflectivity difference between the part that wherein forms and do not form nesa coating.Generally speaking, the absolute value of reflectivity difference more little (wavelength: about 400 arrive 800nm) in visible region, it is not obvious more that pattern form becomes, and can obtain better visibility.Generally speaking, if the absolute value of described reflectivity difference less than about 0.5, then pattern form becomes more not obvious.In Figure 21, when the thickness of external coating 14 and 24 was not less than 45nm, the rate of change of described reflectivity difference was big, and when described thickness was about 30nm, described rate of change was little.As clear as can be known from the result, preferred external coating 14 and 24 is thinner than 30nm, to obtain excellent visibility.
In the Figure 22 that has shown the result when external coating 14 and 24 has nanometer grade thickness, when the thickness of external coating 14 and 24 was not less than 1 μ m, the absolute value of described reflectivity difference was little of about 0.5, and this is preferred from the angle of visibility.
In the present embodiment, transparent electrostatic capacitive contact-making switch 101 has such structure, wherein as follows first transparent planar body 1 and second transparent planar body 2 are attached to each other by adhesive phase 15, described mode be nesa coating 12 and 22 toward each other.Yet, also can obtain transparent resistance film type contact-making switch by arranging first transparent planar body 1 and second transparent planar body 2 as follows, described mode be have a predetermined space that produces by partition nesa coating 12 and 22 toward each other.
In having the transparent touch switch of said structure, the method that is used for detecting contact position is identical with the method for known electrostatic capacitive contact-making switch.Specifically, wait any point of contact first transparent planar body 1 front side, nesa coating 12 and 22 body capacitance ground connection by contact position with finger.The mode of distributing with the time in the vertical and horizontal direction can be calculated the coordinate of described contact position by measuring the impedance of contact point.
As shown in figure 23, the transparent touch switch of present embodiment can also comprise the end liner layer 13 and 23 that the layered product by low-index layer and high refractive index layer forms, and the optical index of wherein said high refractive index layer will be higher than the optical index of described low-index layer. End liner layer 13 and 23 is between nesa coating 12,22 and overlayer 16,26 and transparency carrier 11,21, promptly, described end liner layer is arranged in nesa coating and below the overlayer, but on described transparency carrier, make nesa coating 12 and 22 and overlayer 16 and 26 be formed on the low-index layer side.This structure has been improved the transparency of transparent touch switch 101.
The examples of materials that is used to form every layer of the layered product of end liner layer 13 and 23 comprises silicon tin oxide film, monox, titanium dioxide, tin oxide etc.The example of preferred combination comprises tin oxide/hafnia, monox/tin oxide, zinc oxide/stancic oxide, tin oxide/titanium dioxide or the like. End liner layer 13 and 23 can be by formation such as sputter, vacuum evaporation, electron beam evaporations.
In the transparent touch switch 101 of the 3rd embodiment, also can on the front side of first transparent planar body 1 (forming the surperficial facing surfaces of nesa coating 12 on it), provide linear polarizing plate.When linear polarizing plate is provided, must form transparency carrier 11 and 21 by the optical isotropy material.The examples of materials that is used for described linear polarizing plate comprises polyvinyl alcohol (PVA) (PVA) oriented film, and wherein iodine, dichromatic dye or similar double-colored pigment are adsorbed and are directed.Also can on the surface of this film, adhere to triacetyl acetate (TAC) diaphragm to keep it.To be those do not show the material of polarization characteristic, for example polycarbonate (PC), polyethersulfone (PES), polyacrylic acid (PAC), amorphous polyolefin resin, cyclic polyolefin resin, aliphatics cyclic polyolefin, norborene thermoplastic transparent resin, glass material etc. for any incident light to the optical isotropy material. Transparency carrier 11 and 21 can or be extruded these materials by curtain coating and form.
With respect to the situation when not providing linear polarizing plate, this arrangement make the catoptrical amount that in described contact-making switch, causes by the incident visible light be reduced to half or still less.This arrangement makes that equally nesa coating 12 and 22 is more not obvious and has improved visibility.
Also can provide the circular polarization parts by linear polarizing plate all being attached on the quarter wave plate and this quarter wave plate all being attached on the apparent surface (i.e. the back of the body surface of second transparent planar body 2) of contact-making switch 101.Described quarter wave plate can form to give multiple elasticity by being extended by the film that polyvinyl alcohol (PVA) (PVA), polycarbonate (PC), norborene thermoplastic resin, cyclic polyolefin resin etc. form.Preferred described linear polarizing plate all is attached on the quarter wave plate, and described quarter wave plate has the adhesive phase that is formed with the generation type that stops air layer by the material that can be used for adhesive phase 15 therebetween.Similarly, also preferably described quarter wave plate is attached on the dorsal part of described second transparent planar body, wherein the adhesive phase that is formed by the material that can be used for adhesive phase 15 is therebetween to prevent that air layer from forming.In this case, preferably described quarter wave plate is arranged with following mode, described mode is the optical axis square crossing of optical axis and another quarter wave plate of a quarter wave plate.
By forming the circular polarization parts in aforesaid mode, the described reflected light of possible circular polarization and reduce to be clipped in the internal reflection of the contact-making switch in the part between two quarter wave plates, thus obtain satisfied low reflection characteristic.This arrangement makes that also nesa coating 12 and 22 is more not obvious and has improved visibility.Also can by quarter wave plate and thereon the linear polarizing plate of lamination form transparency carrier 11 and 21.
The 4th embodiment
Below with reference to description of drawings the 4th embodiment of the present invention.In order to make described structure be easier to understand, part enlarges or dwindles in the accompanying drawing each parts and therefore true ratio is not shown.
Figure 24 is the schematic sectional view of explanation according to the contact-making switch of four embodiment of the invention.Transparent touch switch 101 is electrostatic capacitive contact-making switches, and it comprises: have first transparent planar body 1 of a plurality of banded electrically conducting transparent members 32, electrically conducting transparent member 32 is arranged on the surface of transparency carrier 11, wherein has predetermined space betwixt; With second transparent body 2 with a plurality of banded electrically conducting transparent members 42, electrically conducting transparent member 42 is arranged on the surface of transparency carrier 21, wherein has predetermined space betwixt.First transparent planar body 1 and second transparent planar body 2 are attached to each other as follows by adhesive phase 15, described mode be banded electrically conducting transparent member 32 and 42 toward each other.
Preferred described transparency carrier 11 and 21 is formed by high transparent material.The instantiation of preferred material comprises polyethylene terephthalate (PET), polyimide (PI), PEN (PEN), polyethersulfone (PES), polyetheretherketone (PEEK), polycarbonate (PC), polypropylene (PP), polyamide (PA), polyacrylic acid (PAC), acryl resin, amorphous polyolefin resin, cyclic polyolefin resin, aliphatics cyclic polyolefin, transparent in the thermoplastic resin of norborene and similar flexible film; The layered product of two kinds or more kinds of such resins; Soda-lime glass, alkali-free glass, Pyrex, quartz glass and similar glass plate etc. Transparency carrier 11 and 21 preferably about 20 to 500 μ m of thickness.If by the surface of the described contact-making switches of contact such as pen, finger, can on one or two surface of transparency carrier 11 and 21, implement hard conating processing to improve the transparency, resistance to marring, wearing quality, anti-dazzle characteristic etc.
When transparency carrier 11 and 21 is formed by flexible material, can with supporter attached on transparency carrier 11 and 21 to increase its rigidity.The example that is used for the material of described supporter comprises glass plate and the resin material with hardness of the glass hard (HRC65 of being similar to.The thickness of described supporter preferably is not less than 100 μ m, and more preferably 0.2 arrives 0.5mm.
As mentioned above, first and second transparent planar bodies 1 and 2 comprise the lip-deep a plurality of banded electrically conducting transparent member 32 and 42 that are formed on transparency carrier 11 and 21, wherein have particular space betwixt.First and second transparent planar bodies 1 and 2 comprise that also banded transparent control member 33 and 43 is arranged between each banded electrically conducting transparent member 32 and 42 by the banded transparent control member 33 and 43 that forms with banded electrically conducting transparent member 32 and 42 identical materials.In first and second transparent planar bodies 1 and 2, by and the banded transparent control member 33 and 43 that forms of banded electrically conducting transparent member 32 and 42 identical materials be arranged between each banded electrically conducting transparent member 32 and 42, can make that the shape of described banded electrically conducting transparent member 32 and 42 is not obvious, thereby improve visibility.
Shown in the planimetric map of Figure 25 and 26, banded electrically conducting transparent member 32 and 42 and banded transparent control member 33 and 43 have rectangular shape, and alternatively, they are arranged side by side in the noncontact mode that has the insulation slit therebetween, and transparency carrier 11 and 21 exposes from described insulation slit.Banded electrically conducting transparent member 32 and 42 is connected to the external drive circuit (not shown) by the wired circuit (not shown) that is formed by conductive ink, makes voltage is applied thereto.Arrange that the banded electrically conducting transparent member 32 (banded transparent control member 33) of first transparent planar body 1 and the electrically conducting transparent member 42 (banded transparent control member 43) of second transparent planar body 2 make that intersecting is the right angle.
Banded transparent control member 33 and 43 comprises a plurality of impedances slit 35 and 45, it extends in following direction, along described direction, banded electrically conducting transparent member 32 and 42 and banded transparent control member 33 and 43 adjacent, and a plurality of impedances slit 35 is connected adjacent insulation slit 34 and 44 with 45.Banded transparent control member 33 and 43 comprises the isolation slit 36 and 46 that isolates banded transparent control member 33 and 43 along insulation slit 34 and 44 respectively.
Banded electrically conducting transparent member 32 and 42 shape are not limited to present embodiment, and can have Any shape, as long as the contact point of finger etc. can be detected.For example, shown in Figure 27 and 28, banded electrically conducting transparent member 32 and 42 can have such structure, wherein a plurality of rhombus conductive members are linear as follows to be connected, described mode is their the closure square crossing in banded electrically conducting transparent member 32 and 42, and described rhombus conductive member does not overlap each other, and sees as planimetric map.Notice about operating performance, the resolution of transparent touch switch 101 for example, when first transparent planar body 1 and second transparent planar body 2 were overlapping, preferably making did not have the zone of banded electrically conducting transparent member 32 and 42 as much as possible little.From this viewpoint, the structure that wherein the linear texture ratio rectangle that connects of a plurality of rhombus conductive members is formed banded electrically conducting transparent member 32 and 42 more preferably.
As mentioned above, so that the not overlapping and feasible zone that does not form conductive member as shown in planimetric map is as much as possible little, can improve the performance quality of transparent touch switch 101, for example resolution by rhombus conductive member arrangement up and down.This makes that contact position is detected more accurately.Figure 27 and 28 has shown this structure, and wherein banded transparent control member 33 and 43 is not equipped with isolates slit 36 and 46.
Be used for banded electrically conducting transparent member 32 and 42 and the examples of materials of banded transparent control member 33 and 43 comprise indium tin oxide (ITO), indium oxide, antimony-doped tin oxide, fluorine-doped tin oxide, aluminium-doped zinc oxide, potassium doping zinc-oxide, silicon doping zinc paste; Zinc paste-tin oxide, indium oxide-tin oxide, zinc paste-indium oxide-magnesium oxide, zinc paste, tin oxide film and similar transparent conductive material; Tin, copper, aluminium, nickel, chromium and similar metal material; And metal oxide materials.These materials can use separately or use in the mode of combination.Also can be used as conductive material to acid or the short-life simple metal of alkali.
Be used for banded electrically conducting transparent member 32 and 42 and the preferred zinc paste of material (ZnO) of banded transparent control member 33 and 43 because its than be widely used in most contact-making switch, liquid crystal is lower with the ITO price of the materials used of transparent conductive body etc.Particularly, when zinc paste is used as the material that is used for the electrostatic capacitive contact-making switch, because adhesive phase 15 is between first transparent planar body 1 and second transparent planar body 2 and without any air layer, thus the banded electrically conducting transparent member 32 that forms by zinc paste (ZnO) with 42 and banded transparent control member 33 can directly not contact with 43 with air.Stoped deterioration, and reduced the production cost of product (contact-making switch) owing to the zinc paste (ZnO) that oxidation causes.
Can also use as being used for banded electrically conducting transparent member 32 and 42 and the compound substance of the material of banded transparent control member 33 and 43, wherein carbon nano-tube, carbon nanohorn, carbon nanocoils, carbon nano-fiber, graphite fiber and similar ultra-thin conductive carbon fibre are arranged in the polymeric material of the function that plays cementing agent.Form banded electrically conducting transparent member 32 and 42 and banded transparent control member 33 and 43 before, can also on the surface of transparency carrier 11 and 21, provide the end liner layer to strengthen its transparency and adhesiveness.
Hereinafter explanation is used to form banded electrically conducting transparent member 32 and 42 and the method for banded transparent control member 33 and 43.At first, the conducting film that will have homogeneous thickness is formed on the surface of the transparency carrier 11 that uses above-mentioned material and 21.The method example that is used to form described conducting film comprises sputter, vacuum deposition, ion plating and similar PVD method, CVD method, rubbing method, print process etc.The thickness of described conducting film normally about 5 to 100nm.
Secondly, when adopting laser radiation to be formed on the surface of the conducting film on transparency carrier 11 and 21, mobile transparency carrier 11 and 21 or described laser to remove described conducting film.Carry out thus banded electrically conducting transparent member 32 and 42 and banded transparent control member 33 and 43 between separation.The part of removing conducting film by laser radiation becomes insulation slit 34 and 44.The device example that is used for laser radiation comprises YAG laser instrument, carbon laser etc.When using laser to be formed for to make the width of insulation slit 34 and 44 be for example 5 to 400 μ m banded electrically conducting transparent member 32 and 42 and when the insulation slits 34 that isolate of banded transparent control member 33 and 43 and 44 as mentioned above.This make banded electrically conducting transparent member 32 and 42 and banded transparent control member 33 and 43 between the border not obvious, thereby improved visibility.Particularly, by making the width of insulation slit 34 and 44 be not more than 20 μ m, almost can not recognize insulation slit 34 and 44 by visualization.Therefore, this is preferred from the viewpoint of improving visibility.
Similarly, also can adopt the surface of the banded transparent control member 33 of laser radiation and 43 to remove described conducting film to form as the impedance slit 35 in slit and 45 and isolation slit 36 and 46 with 5 to 400 μ m.This make in the transparent control member 33 of band shape and 43 form and do not form impedance slit 35 and 45 and/or the border that isolates between the part of slit 36 and 46 not obvious.In order to improve visibility, preferred especially impedance slit 35 and 45 and the width of isolating slit 36 and 46 be not more than 20 μ m.As hereinafter described, in order to make banded transparent control member 33 and 43 have high impedance status, be preferably formed a plurality of impedances slit 35 and 45 and isolate slit 36 and 46 so that the transparent control member 33 of band shape and 43 is separated into little part so that almost there is not electric current to flow through.For example, when each impedance slit with 5 μ m width is formed in the banded transparent control member 33 and 43 of width of length with 60581.8 μ ms and 4880 μ ms to have 5 μ m mode at interval therebetween, can form maximum 6058 impedance slits.The width in preferred described impedance slit is 9 μ m and forms 9 to 3366 impedance slits.When the isolation slit with 5 μ m width is formed in the banded transparent control member 33 and 43 with same size as mentioned above, can forms and be 486 at most and isolate slits.The width in preferred described isolation slit is 9 μ m and forms 0 to 269 isolation slit.
By forming 6058 impedance slits and 486 isolation slits, banded transparent control member 33 and 43 can be divided into maximum 2,949,759 zones as mentioned above.Preferred banded transparent control member 33 and 43 is divided into 8 to 908,550 zones.
Adhering to preferably between first transparent planar body 1 and second transparent planar body 2 carried out in the following way, and described mode is that adhesive phase 15 is positioned on the whole attaching surface to avoid forming air layer.Adhesive phase 15 can be by based on epoxy, form based on acryloyl group and similar normally used clear binder, and can comprise by the transparent film formed core based on the resin of norborene.The thickness of adhesive phase 15 preferably is not more than 500 μ m, is more preferably 20 to 80 μ m, again more preferably 50 to 80 μ m.Described adhesive phase can form by the sheet or the lamination polytype sheet bonding agent of a plurality of single type sheet of lamination bonding agent.
In the transparent touch switch 101 with said structure, the method that is used for detecting contact position is identical with the method for known electrostatic capacitive contact-making switch.Specifically, wait any point of contact first transparent planar body 1 front side, nesa coating 12 and 22 body capacitance ground connection by contact position with finger.Flow through the current value of nesa coating 12 and 22 at this moment by detection, can calculate the coordinate of contact position.
In the transparent touch switch 101 of present embodiment, banded transparent control member 33 and 43 comprises a plurality of impedances slit 35 and 45, and therefore when contacting the front surface of first transparent planar body 1, banded electrically conducting transparent member 32 and 42 and banded transparent control member 33 and 43 between capacitive coupling appears, wherein banded transparent control member 33 and 43 and described banded electrically conducting transparent member 32 and 42 positioned adjacent.In this structure, even micro-current flows to banded transparent control member 33 and 43, become high, and therefore electric current can not flow through almost at resistance described in the transparent control member 33 of band shape and 43.This banded electrically conducting transparent member 32 and 42 that make to allow sufficient electric current flow into to be used for to detect contact position becomes possibility.Therefore, when with the front surface of contacts such as finger first transparent planar body 1,, can carry out reliable detection, make the coordinate that can correctly detect contact position by the difference of banded electrically conducting transparent member electric current with when not contacting.
In the 4th embodiment, structure impedance slit 35 and 45 is so that insulation slit 34 and 44 is connected to each other, therefore wherein insulate slit 34 and 44 and banded transparent control member 33 and 43 positioned adjacent can prevent to flow at the electric current of the length direction of the transparent control member 33 of band shape and 43 reliably.This has further guaranteed to enter into the amount of satisfaction of the electric current of banded electrically conducting transparent member 32 and 42.This makes when with the front surface of contacts such as finger first transparent planar body 1 with when not contacting, and can detect difference in the electric current that flows through banded electrically conducting transparent member 32 and 42 in more reliable mode, and detects the coordinate of contact position in mode more accurately.
In the 4th embodiment, banded transparent control member 33 and 43 comprises the isolation slit 36 and 46 that is used to isolate the transparent control member 33 of described band shape and 43 along insulation slit 34 and 44.This structure can prevent banded electrically conducting transparent member 32 and 42 and the direction of banded transparent control member 33 and 43 adjacency in electric current flow through banded transparent control member 33 and 43.This has given banded transparent control member 33 and 43 higher resistance states and the accurate detection that allows contact position.
The 4th embodiment of the present invention has been described above; Yet concrete structure of the present invention is not limited to this embodiment.In first transparent planar body 1 and second transparent planar body 2 of present embodiment, each banded transparent control member 33 and 43 is equipped with impedance slit 35 and 45 and isolate slit 36 and 46 respectively.Yet, also can use the structure shown in Figure 29, wherein in the banded transparent adjuster 43 of second transparent planar body 2, omit impedance slit 45 and isolate slit 46.Even in this structure, because being formed on finger with isolation slit 36, impedance slit 35 waits in the banded transparent adjuster 33 of first transparent planar body 1 that contacts, banded transparent adjuster 33 obtains high impedance statuss and electric current almost can not flow through.The magnitude of current that therefore, can distribute the satisfaction that enters into the banded electrically conducting transparent member 32 that is used for detecting contact position and 42.Therefore, when with the front surface of contacts such as finger first transparent planar body 1,, can detect the electric current difference that flows through banded electrically conducting transparent member 32 and 42 reliably, and can detect the coordinate of contact position exactly with when not contacting.
The impedance slit 35 of the 4th embodiment and 45 shape are not limited to top described, and can be Figure 30 (a) to the different shape shown in 30 (c) and Figure 31 (a) and 31 (b), these figure are enlarged drawings of major part.In Figure 30, banded electrically conducting transparent member 32 and 42 is rectangles.In Figure 31, banded electrically conducting transparent member 32 and 42 forms the linear a plurality of rhombus conductive members that are connected.
The shape of isolating slit 36 and 46 also is not limited to top described, and can be the different shape shown in the major part enlarged drawing of Figure 32 (a) and 32 (b).In Figure 32, banded electrically conducting transparent member 32 and 42 forms the linear a plurality of rhombus conductive members that are connected.Also can use and wherein isolate the structure that slit 36 and 46 is omitted.
In the present embodiment, thus by adhesive phase 15 first transparent planar body 1 is attached on second transparent planar body 2 and forms electrostatic capacitive contact-making switch 101.Yet, can arrange in the following way that also first transparent planar body 1 and second transparent planar body 2 obtain transparent resistance film type contact-making switch, described mode be banded electrically conducting transparent member 32 and 42 toward each other, wherein have the predetermined space that produces by partition therebetween.
In having the transparent touch switch of said structure, the method that is used for detecting contact position is identical with the method for known electrostatic capacitive contact-making switch.Specifically, when waiting any point of the front surface that contacts first transparent planar body 1 with finger, banded electrically conducting transparent member 32 and 42 is grounded.The mode of distributing with the time in the vertical and horizontal direction can be calculated the coordinate of contact position by measuring the impedance of contact point.
In the transparent touch switch 101 of the 4th embodiment, linear polarizing plate can be provided at the front side (with that the surperficial relative side that forms nesa coating 12 on it) of first transparent planar body 1.If linear polarizing plate is provided, transparency carrier 11 and 21 should be formed by the optical isotropy material.An oriented film that example is polyvinyl alcohol (PVA) (PVA) of described linear polarizing plate, wherein iodine, dichromatic dye or similar double-colored pigment are adsorbed and are directed.Described linear polarizing plate can be by forming to clamp it on two surfaces that will be attached to thus obtained oriented film as triacetyl acetate (TAC) film of diaphragm function.The optical isotropy material is those materials that do not have polarization phenomena for any incident light, for example polycarbonate (PC), polyethersulfone (PES), polyacrylic acid (PAC), amorphous polyolefin resin, cyclic polyolefin resin, aliphatics cyclic polyolefin, norborene thermoplastic transparent resin, glass material etc.The method example that is used to use these materials to form transparency carrier 11 and 21 comprises curtain coating and extrudes.
Situation when not providing linear polarizing plate, this arrangement make the catoptrical amount of the visible light that incides in the contact-making switch be reduced to half or still less.Such arrangement makes that also nesa coating 12 and 22 is more not obvious and has improved visibility.
Also can be by linear polarizing plate all be attached on the quarter wave plate, and described quarter wave plate all is attached on the apparent surface (back of the body surface of second transparent planar body 2 just) of contact-making switch 101 the circular polarization member is provided.Described quarter wave plate can form to give multiple elasticity by extending the film of being made up of polyvinyl alcohol (PVA) (PVA), polycarbonate (PC), norborene thermoplastic resin, cyclic polyolefin resin etc.Preferably described linear polarizing plate all is attached on the quarter wave plate, described quarter wave plate has the adhesive phase that is formed by the material that can be used for adhesive phase 15, and described adhesive phase is formed on therebetween in the mode of the formation of prevention air layer.Similarly, also preferably described quarter wave plate is attached on the dorsal part of second transparent planar body, wherein the adhesive phase that is formed by the material that can be used for adhesive phase 15 is therebetween to prevent that air layer from forming.In this case, preferred described quarter wave plate is arranged as follows, and described mode is the optical axis square crossing of optical axis and another quarter wave plate of a quarter wave plate.
By forming the circular polarization parts with aforesaid method, can the described reflected light of circular polarization and reduce to be clipped in two internal reflections in the contact-making switch in the part between the quarter wave plate, thus obtain satisfied low reflection characteristic.Such arrangement makes that also banded electrically conducting transparent member 32 and 42 is more not obvious and has improved visibility.Notice that transparency carrier 11 and 21 can or comprise that the layered product of linear polarizing plate forms by quarter wave plate.
Also can use the structure shown in the schematic sectional view of Figure 33, wherein a plurality of banded electrically conducting transparent members 32 and 42 are formed on two surfaces of a transparency carrier 31, and have predetermined space betwixt; Have a plurality of impedances slit 35 and 45 and the banded transparent control member 33 and 43 of a plurality of isolation slit 36 and 46 be provided at respectively between each banded electrically conducting transparent member 32 and 42; And banded electrically conducting transparent member 32 and 42 and banded transparent control member 33 and 43 by the insulation slit 34 and 44 be arranged side by side.Layout is formed on 31 two lip-deep banded electrically conducting transparent members 32 of transparency carrier and 42 and banded transparent control member 33 and 43, makes them be crossed as the right angle in the vertical.When the transparent planar body 30 that has this structure by use forms the electrostatic capacitive contact-making switch, two transparent planar bodies (being equivalent to first transparent planar body 1 and second transparent planar body 2) are by becoming unnecessary adhering to of adhesive phase 15, thereby have improved throughput rate.In addition, because described contact-making switch only comprises that a transparency carrier 31 and adhesive phase 15 are unnecessary, can make that described contact-making switch is thinner.
Can form this transparent planar body 30 in the following manner.At first, on two surfaces of a transparency carrier 31, form conducting film.Secondly, a surface of adopting laser radiation transparency carrier 31 makes to form banded electrically conducting transparent member 32 and banded transparent control member 33 to remove described conducting film.The 3rd, another surface of adopting the described transparency carrier 31 of laser radiation makes to form banded electrically conducting transparent member 42 and banded transparent control member 43 in above-mentioned same mode to remove described conducting film.When banded electrically conducting transparent member 32 and 42 etc. are formed on two surfaces of transparency carrier 31, form in step and the procedure of processing at film and should operate described transparency carrier carefully, make the described conducting film that is formed on two surfaces not be damaged.

Claims (38)

1. transparent planar body, it comprises:
Transparency carrier;
The nesa coating of patterning, it provides at least one surface of described transparency carrier; With
Transmittance is adjusted layer, and it is used to make via described transparency carrier, sees through the optical transmission spectrum of the pattered region that nesa coating wherein is provided with identical through the optical transmission spectrum of the non-pattered region that nesa coating wherein is not provided.
2. according to the transparent planar body of claim 1, wherein said transmittance adjustment layer comprises having the external coating on a surface of the described transparency carrier of covering of homogeneous thickness basically, and wherein this external coating is thicker and have a lower refractive index than described nesa coating.
3. according to the transparent planar body of claim 2, wherein said external coating is formed by the silicon tin-oxide.
4. according to the transparent planar body of claim 3, wherein said external coating has 70 to 80nm thickness.
5. according to each transparent planar body of claim 2 to 4, wherein the refractive index difference between described nesa coating and described external coating is in 0.03 to 0.4 scope.
6. according to each transparent planar body of claim 2 to 5, wherein the end liner layer between described transparency carrier and described nesa coating,
Described end liner layer has layer structure, this layer structure comprise have the two-layer at least of different optical indexs and
Described nesa coating forms in the low-index layer side.
7. one kind comprises as each the transparent touch switch of a plurality of transparent planar bodies of claim 2 to 6,
Described transparent planar body is attached to each other by adhesive phase, and play transparent electrostatic capacitive contact-making switch effect and
Described adhesive phase has the refractive index lower than described nesa coating.
8. according to the transparent touch switch of claim 7, it also is included in the linear polarizing plate of front side.
9. according to the transparent touch switch of claim 7, it also is included in the linear polarizing plate of front side and quarter wave plate and at the quarter wave plate of dorsal part.
10. transparent touch switch according to Claim 8, wherein said transparency carrier is a quarter wave plate.
11. transparent planar body according to claim 1, wherein said transmittance adjustment layer is equipped with the end liner layer that is formed by layered product, described layered product comprises low-index layer and high refractive index layer, and the optical index of wherein said high refractive index layer is higher than the optical index of described low-index layer
Described end liner layer as follows between described transparency carrier and described nesa coating, that is, and make described nesa coating be arranged in described low-index layer side and
Described high refractive index layer is thinner than described low-index layer.
12. according to the transparent planar body of claim 11, the thickness of wherein said high refractive index layer arrives in the scope of 25nm 10, the thickness of described low-index layer arrives in the scope of 45nm 25.
13. according to the transparent planar body of claim 12, wherein said high refractive index layer is formed by the silicon tin-oxide, described low-index layer is formed by monox.
14. according to each transparent planar body of claim 11 to 13, the thickness of wherein said nesa coating 10 in the scope of 25nm.
15. one kind comprises as each the transparent electrostatic capacitive contact-making switch of a plurality of transparent planar bodies of claim 11 to 14,
Described a plurality of transparent planar body is attached to each other by adhesive phase.
16. one kind comprises according to each the transparent electrostatic capacitive contact-making switch of a plurality of transparent planar bodies of claim 11 to 14,
Described a plurality of transparent planar body is attached to each other as follows by adhesive phase,, makes described nesa coating toward each other that is,
The thickness of described nesa coating be 20 to 25nm and
The refractive index of described adhesive phase is not less than 1.6.
17. one kind comprises according to each the transparent electrostatic capacitive contact-making switch of a plurality of transparent planar bodies of claim 11 to 14,
Described a plurality of transparent planar body is attached to each other as follows by adhesive phase,, makes described nesa coating toward each other that is,
The thickness of described nesa coating be 25 to 30nm and
The refractive index of described adhesive phase is not less than 1.7.
18. according to each transparent touch switch of claim 15 to 17, it also is included in the linear polarizing plate of front side.
19. according to each transparent touch switch of claim 15 to 17, it also is included in the linear polarizing plate of front side and quarter wave plate and at the quarter wave plate of rear side.
20. according to the transparent touch switch of claim 18, wherein said transparency carrier is a quarter wave plate.
21. according to the transparent planar body of claim 1, wherein said transmittance adjustment layer comprises overlayer, this overlayer is used to cover the expose portion that described nesa coating is not provided on the surface of described transparency carrier,
Described overlayer be formed make its surface and the flush of described nesa coating and
Described tectal refractive index equates with the refractive index of described nesa coating.
22. according to the transparent planar body of claim 22, wherein said overlayer is formed by the silicon tin-oxide.
23. according to the transparent planar body of claim 21 or 22, wherein said nesa coating is formed by carbon nano tube compound material.
24. according to each transparent planar body of claim 21 to 23, it also comprises the end liner layer that the layered product by low-index layer and high refractive index layer forms, described high refractive index layer has the optical index higher than described low-index layer,
In described transparent planar body, described end liner layer makes described nesa coating and described overlayer be arranged in described low-index layer side between described nesa coating and described overlayer and described transparency carrier.
25. according to each transparent planar body of claim 21 to 24, it also comprises the external coating that covers described nesa coating and described tectal surface, wherein the surface of this external coating is smooth.
26. one kind comprises as each the transparent electrostatic capacitive contact-making switch of a plurality of transparent planar bodies of claim 21 to 25,
Described a plurality of transparent planar body is attached to each other by adhesive phase.
27. one kind comprises as each the transparent resistance film type contact-making switch of a plurality of transparent planar bodies of claim 21 to 24,
Described a plurality of transparent planar body is arranged to, and makes to have the predetermined space that produces as follows by partition therebetween, and described mode is for making described nesa coating toward each other.
28. according to the transparent touch switch of claim 26 or 27, it is included in the linear polarizing plate of front side.
29. according to the transparent touch switch of claim 26 or 27, it is included in the linear polarizing plate of front side and quarter wave plate and at the quarter wave plate of dorsal part.
30. according to the transparent touch switch of claim 28, wherein said transparency carrier is a quarter wave plate.
31. according to the transparent planar body of claim 1, wherein said nesa coating comprises a plurality of banded electrically conducting transparent members that have predetermined space therebetween,
Described transmittance adjustment layer comprise via the insulation slot placement between two adjacent banded electrically conducting transparent members banded transparent control member and
The transparent control member of described band shape is by forming with described banded electrically conducting transparent member identical materials, and comprises a plurality of impedances slit.
32. according to the transparent planar body of claim 31, wherein arrange described a plurality of impedances slit so that an insulation slit is connected to another, each insulation slit is provided with adjacent to each banded transparent control member.
33. according to the transparent planar body of claim 31 or 32, it also comprises along the isolation slit in described insulation slit, to isolate each banded transparent control member.
34. one kind comprises as each the transparent electrostatic capacitive contact-making switch of a plurality of transparent planar bodies of claim 31 to 33,
Described a plurality of transparent planar body is attached to each other by adhesive phase.
35. one kind comprises as each the transparent resistance film type contact-making switch of a plurality of transparent planar bodies of claim 31 to 33,
Described a plurality of transparent planar body is arranged to, and make to have the predetermined space that produces by partition therebetween, and described banded transparent conductive body toward each other.
36. according to the transparent touch switch of claim 34 or 35, it is included in the linear polarizing plate of front side.
37. according to the transparent touch switch of claim 34 or 35, it is included in the linear polarizing plate of front side and quarter wave plate and at the quarter wave plate of dorsal part.
38. according to the transparent touch switch of claim 36, wherein said transparency carrier is a quarter wave plate.
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