CN101101886A - Inspection apparatus for semiconductor and inspection method for semiconductor ic - Google Patents
Inspection apparatus for semiconductor and inspection method for semiconductor ic Download PDFInfo
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- CN101101886A CN101101886A CN 200710101356 CN200710101356A CN101101886A CN 101101886 A CN101101886 A CN 101101886A CN 200710101356 CN200710101356 CN 200710101356 CN 200710101356 A CN200710101356 A CN 200710101356A CN 101101886 A CN101101886 A CN 101101886A
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Abstract
The connection between a PTC element 22 a corresponding to each semiconductor IC 11 a and a power-supply line 25 a is performed via a relay, a high voltage is supplied to the power-supply line 25 a by sequentially turning on the relays, and a high voltage is supplied to each PTC element 22 a in order, whereby it is possible to trip beforehand a PTC element 22 a connected to a DC-defective semiconductor IC 11 a. In this state, wafer level burn-in is performed together, which enables the PTC element 22 a to be positively tripped during the burn-in for the DC defect of the semiconductor IC 11 a, with the result that it is possible to increase the reliability of the burn-in.
Description
Technical field
The semiconductor checking device that the present invention relates to use wafer to concentrate probe wear out or use burn-in board to concentrate to wear out and the inspection method of semiconductor integrated circuit.
Background technology
In semiconductor device or wafer, in order to screen the defective item that the manufacturing initial stage produces, under high temperature, high voltage condition, worked by making semiconductor device or wafer in the past, carry out accelerated test.This is called aging.In recent years, carry out with the aging technology of concentrating of wafer scale (below, be called wafer-level burn) more.In wafer-level burn, to the power electrode of device, and a plurality of input and output electrodes import high voltage or signal respectively, make its work, check.
Usually, for semiconductor wafer, a plurality of devices of making on wafer all are that the probability of qualified product is very low, mix having defective item and qualified product on wafer.In addition, in wafer-level burn, in most cases only qualified product are loaded and check that defective item then is insulated, do not make its work.
Here, with the formation of the probe card (semiconductor checking device) in Fig. 7 explanation wafer-level burn in the past.
Fig. 7 (a) is depicted as the plane graph at the back side of probe card in the past, be depicted as probe card with respect to the appearance of the opposing face of 11 contacted of each semiconductor integrated circuit.Fig. 7 (b) is depicted as the cutaway view of the cross-section structure of probe card in the past.
Shown in Fig. 7 (b), on semiconductor wafer 10, form a plurality of semiconductor integrated circuit 11, each semiconductor integrated circuit 11 is formed check with electrode 12.In addition, though each semiconductor integrated circuit 11 is formed a plurality of inspections usually with electrode 12,, in Fig. 7 (b), be depicted as each semiconductor integrated circuit 11 is formed the situation of an inspection with electrode 12 in order to illustrate conveniently.The position relation of the semiconductor integrated circuit 11 when on semiconductor wafer 10, probe card being set when in addition, the chain-dotted line of Fig. 7 (a) is represented to check.
Shown in Fig. 7 (a) and (b), surface at the card body 20 that constitutes probe card, with each inspection of semiconductor integrated circuit 11 electrode 12 corresponding formation probe terminals 21, the back side of card body 20 with probe terminal 21 corresponding positions, forming the failure of current circuit that cuts off action according to the magnitude of current respectively is PTC (Positive Temperature Coefficient, positive temperature coefficient) element 22.In addition, the position at the formation probe terminal 21 that blocks body 20 forms the contact 23 that connects card body 21 along both forward and reverse directions, and the face side of contact 23 is connected with the terminal 21 of popping one's head in, and the rear side of contact 23 is connected with PTC element 22.
Peripheral part at the back side of blocking body 20 forms the outer electrode 24 that applies voltage from external device (ED), and simultaneously at the back side of card body 20, the common electric voltage supply line 25 that connects outer electrode 24 and each PTC element 22 carries out branch and extension.By like this, if outer electrode 24 is applied voltage, the voltage that then applies imposes on the terminal 21 of respectively popping one's head in by common electric voltage supply line 25, PTC element 22 and contact 23.Also can be such formation in addition, promptly common electric voltage supply line 25 utilizes many common electric voltage supply lines 25 from outer electrode 24 branches, with the every row on the semiconductor wafer 10 or 11 corresponding 22 public connections of PTC element of semiconductor integrated circuit of every row.In addition, as common electric voltage supply line 25, can be to apply the power supply voltage supplying line that supply voltage is used, also can be to apply the earthed voltage supply line that earthed voltage is used.
As PTC element 22, can adopt polymer system PTC element or the pottery made by barium titanate etc. is a PTC element etc.
In addition, polymer system PTC element is the resistive element that the carbon of conductivity and insulating properties polymer mixed such as polyolefin or fluorine resin are formed, under normal circumstances, because the carbon that is dispersed in the polymer forms a plurality of conductive channel, therefore has low intrinsic resistance value.But if from usual state temperature is risen, then because the The thermal expansion of polymer rate is higher than the coefficient of thermal expansion of carbon, so the conductive channel of carbon is cut off gradually, demonstrates ptc characteristics slowly.Then, if surpass set point of temperature, then show the PTC effect sharp.That is, because the fusion of polymer causes even reaches tens percent change in volume, this change in volume is cut off the conductive channel of carbon in succession, thus resistance value increases several, for example about 5.
In addition, pottery is that the PTC element is by adjusting the addition of impurity, can select to manifest the set point of temperature of PTC effect, be in the PTC element for example at the pottery of making by barium titanate etc., if add Pb as impurity, then the temperature that manifests the PTC effect can be moved to high temperature side, along with the addition that increases Pb, the temperature that then manifests the PTC effect moves to high temperature side.
If flow through a large amount of electric currents in the PTC element, perhaps the temperature of PTC element rises, and then the resistance value of PTC element becomes than the significant high resistance of normal condition, and this phenomenon is called disconnection (trip).Under normal condition, the resistance value of PTC element is low-down value with respect to load, and it is stable, but if the magnitude of current that flows through surpasses the benchmark that characteristic determined (turn-off current) by the PTC element, then owing to the resistance that makes the PTC element that oneself generates heat raises, the electric current that will flow through the PTC element limits very for a short time.If in a single day the PTC element becomes off-state, because the PTC element is the state that resistance value raises, and also stable, so the PTC element continues to keep off-state.Then, if dump, the temperature of PTC element is got back to original state, and perhaps the voltage of circuit becomes enough low (caloric value of PTC element is less than heat dissipation capacity), and then the PTC element is got back to normal condition automatically.
As mentioned above, in the probe card that wafer-level burn uses, have voltage supply line and the corresponding PTC element that is attached on the voltage supply line with each semiconductor integrated circuit to each semiconductor integrated circuit service voltage, by like this when the wafer-level burn, because the underproof semiconductor integrated circuit of DC is flow through a large amount of electric currents, therefore the PTC element becomes high resistance, semiconductor integrated circuit can be insulated.
In recent years, the technology miniaturization develops rapidly, and correspondingly the power consumption of semiconductor integrated circuit becomes very big.The source current (disconnect leak) of work when stopping to have the trend that increases by exponential function with respect to temperature, under aging high temperature, high voltage condition, owing to miniaturization causes disconnecting the increase of leakage, will become serious problem.
Usually, for semiconductor wafer, a plurality of devices of making on wafer all are that the probability of qualified product is very low, on wafer, mix and have defective item and qualified product, in wafer-level burn, in most cases be performed such, promptly only qualified product are loaded, defective item then is insulated, and is in the state that does not make its work.Particularly for DC defective (flowing through a large amount of electric currents), in a plurality of semiconductor integrated circuit under the situation of public connection power supply, though must insulate, the problem that exists is, be difficult to identification disconnect the increase of leaking, with the underproof difference of foregoing DC.
In addition, in the semiconductor checking device of above-mentioned conventional art, PTC element and power supply supply line or ground connection common wire are connected in parallel.
In such configuration, since disconnect the interference of leaking many semiconductor integrated circuit, the feasible undercurrent of supplying with each PTC element, and therefore the problem that exists is, for the PTC element of DC defective item, can not flow through turn-off current really semiconductor integrated circuit is insulated.
The inspection method of semiconductor checking device of the present invention and semiconductor integrated circuit is just in order to solve the above problems, its purpose is for the DC of semiconductor integrated circuit defective, the PTC element is disconnected, improve wafer-level burn and concentrate the aging reliability of assembly.
Summary of the invention
In order to achieve the above object, semiconductor checking device of the present invention, be that a plurality of semiconductor integrated circuit a plurality of electrodes with input/output signal or supply voltage or earthed voltage, that form on the wafer are concentrated the semiconductor checking device that wears out, have: a plurality of probes that each electrode of the whole former electrodes that possess with whole aforesaid semiconductor integrated circuits is connected, checks; The former electrodes that the signal that aforementioned each semiconductor integrated circuit is possessed is used, many barss wirings of using by the aforementioned signal of aforementioned probe input and output; The former electrodes that whole power supply that aforementioned each semiconductor integrated circuit is possessed is used is supplied with the power-supply wiring of aforementioned power source voltage by aforementioned probe; To whole earthy former electrodes that aforementioned each semiconductor integrated circuit possesses, supply with the ground connection wiring of aforementioned earthed voltage by aforementioned probe; Be inserted in the relay between the former electrodes that aforementioned power source wiring and whole or at least one power supply use; And be inserted in PTC element between the electrode that aforementioned relay and aforementioned power source use, it is connection status that each aforesaid semiconductor integrated circuit is made aforementioned relay successively, apply high voltage, under the state that the aforementioned PTC element that makes the whole aforesaid semiconductor integrated circuits that are confirmed to be defective item disconnects, carry out aforementioned aging.
In addition, between the electrode that aforementioned signal routing and aforementioned each signal are used, also insert the signal relay, establish aforementioned signal with the control signal of relay output signal for the aforementioned PTC element that is connected with same aforesaid semiconductor integrated circuit.
In addition, be that a plurality of semiconductor integrated circuit a plurality of electrodes with input/output signal or supply voltage or earthed voltage, that form on the wafer are concentrated the semiconductor checking device that wears out, have: a plurality of probes that each electrode of the whole former electrodes that possess with whole aforesaid semiconductor integrated circuits is connected, checks; The former electrodes that the signal that aforementioned each semiconductor integrated circuit is possessed is used, many barss wirings of using by the aforementioned signal of aforementioned probe input and output; Each electrode of the former electrodes that the power supply of the same voltage that aforementioned each semiconductor integrated circuit is possessed by aforementioned probe is used is supplied with many power-supply wirings of corresponding supply voltage; To whole earthy former electrodes that aforementioned each semiconductor integrated circuit possesses, supply with the ground connection wiring of aforementioned earthed voltage by aforementioned probe; Be inserted in the relay between the former electrodes that aforementioned power source wiring and whole or at least one power supply use; And be inserted in PTC element between the electrode that aforementioned relay and aforementioned power source use, the control signal of the relay that is connected with electrode that a corresponding power supply of supply voltage is used from outside input, the output signal of an input and an aforementioned corresponding aforementioned PTC element of supply voltage, control signal as the relay that is connected with electrode that the corresponding power supply of supply voltage is in addition used, the relay that the electrode used with an aforementioned corresponding power supply of supply voltage is connected to each aforesaid semiconductor integrated circuit is a connection status, apply high voltage, under the state that the aforementioned PTC element that makes the whole aforesaid semiconductor integrated circuits that are confirmed to be defective item disconnects, carry out aforementioned aging.
Have again, the inspection method of semiconductor integrated circuit of the present invention, be to utilize the PTC element to concentrate the inspection method of the semiconductor integrated circuit wear out under stopping the aforesaid semiconductor ic power condition of supplying of defective item, have following operation: carry out the operations that power supply is supplied with, made the aforementioned PTC element disconnection that is connected with the aforesaid semiconductor integrated circuit of defective item successively the aforesaid semiconductor integrated circuit is each one or more to a plurality of semiconductor integrated circuit; And under the state that the aforementioned PTC element that is connected with the aforesaid semiconductor integrated circuit is disconnected, concentrate the operation of aging whole aforesaid semiconductor integrated circuits.
In addition, use the voltage that is lower than aging voltage, the voltage when supplying with as aforementioned power source.
In addition, utilize the electric current of the power supply of supplying with aforesaid voltage, the voltage when adjusting the aforementioned power source supply.
In addition, use the output signal of aforementioned PTC element, control signal input the aforesaid semiconductor integrated circuit.
In addition, under the low temperature of the temperature when aging, carry out aforementioned power source and supply with.
In addition, have at the aforesaid semiconductor integrated circuit under the situation of a plurality of power supplys, the output signal of a use and a corresponding PTC element of supply voltage is controlled applying supply voltage with the corresponding PTC element of other supply voltage.
In addition, aforementioned wearing out is to the concentrated wafer-level burn that carries out of the aforementioned a plurality of semiconductor integrated circuit that form on the wafer.
In addition, the aforesaid semiconductor integrated circuit is the semiconductor integrated circuit that installs that is placed on the burn-in board, aforementioned aging be to concentrate the assembly that carries out aging to the aforementioned a plurality of semiconductor integrated circuit that are placed on the aforementioned burn-in board.
Have again, semiconductor checking device of the present invention, be a plurality of semiconductor integrated circuit of a plurality of electrodes with input/output signal or supply voltage or earthed voltage to be installed and the aforesaid semiconductor integrated circuit is concentrated the semiconductor checking device that wears out, have: a plurality of plate cloth line terminals that each electrode of the whole former electrodes that possess with whole aforesaid semiconductor integrated circuits is connected, checks; The former electrodes that the signal that aforementioned each semiconductor integrated circuit is possessed is used, many barss wirings of using by the aforementioned signal of aforementioned panels cloth line terminals input and output; The former electrodes that whole power supply that aforementioned each semiconductor integrated circuit is possessed is used is by the power-supply wiring of aforementioned panels wiring terminal feeding aforementioned power source voltage; Whole earthy former electrodes to aforementioned each semiconductor integrated circuit possesses connects up by the ground connection of the aforementioned earthed voltage of aforementioned panels wiring terminal feeding; Be inserted in the relay between the former electrodes that aforementioned power source wiring and whole or at least one power supply use; And be inserted in PTC element between the electrode that aforementioned relay and aforementioned power source use, it is connection status that each aforesaid semiconductor integrated circuit is made aforementioned relay successively, apply high voltage, under the state that the aforementioned PTC element that makes the whole aforesaid semiconductor integrated circuits that are confirmed to be defective item disconnects, carry out aforementioned aging.
In addition, between the electrode that aforementioned signal routing and aforementioned each signal are used, also insert the signal relay, establish aforementioned signal with the control signal of relay output signal for the aforementioned PTC element that is connected with same aforesaid semiconductor integrated circuit.
Description of drawings
Figure 1 shows that the connection status figure of the semiconductor checking device of the invention process form 1.
Fig. 2 is the key diagram of the semiconductor checking device of explanation example 4.
Fig. 3 is the key diagram of the semiconductor checking device of explanation example 5.
Figure 4 shows that the I-E characteristic figure of semiconductor integrated circuit.
Figure 5 shows that the electric current-temperature characteristics figure of semiconductor integrated circuit.
Fig. 6 is the key diagram of the semiconductor checking device of explanation example 6.
Fig. 7 A is depicted as the plane graph at the back side of probe card in the past.
Fig. 7 B is depicted as the cutaway view of the cross-section structure of probe card in the past.
Embodiment
Below, describe the example of the inspection method of relevant semiconductor checking device of the present invention and semiconductor integrated circuit with reference to the accompanying drawings in detail.
(example 1)
Example 1 of the present invention is about the example of PTC element and relay, is elaborated with Fig. 1.Figure 1 shows that the connection status figure of the semiconductor checking device of the invention process form 1.
In Fig. 1,22a is the PTC element, and 24a is an outer electrode, and 25a is common electric voltage or electric current supplying wire.The planar structure at the back side of the probe card in above formation and the conventional art shown in Figure 7 is identical.10a is a semiconductor wafer, and 11a is a semiconductor integrated circuit, and 12a checks to use power electrode.Then, the 1st, relay that the present invention is relevant or relay circuit.
Relay or relay circuit 1 are connected in parallel with common electric voltage or electric current supplying wire 25a, and PTC element 22a and relay or relay circuit 1 are connected in series, and are connected with power electrode 12a with inspection by each probe terminal 21a.In addition, in Fig. 1, relay or relay circuit 1 are connected between PTC element and voltage or the electric current supplying wire 25a, but also can be connected between PTC element 22a and each the probe terminal 21a.
In the example of Fig. 1, common electric voltage or electric current supplying wire 25a supply with from outer electrode 24a, are branched off into many supply lines that are connected with the semiconductor integrated circuit 11a of every row.
In addition, voltage or the electric current supply to semiconductor integrated circuit 11a also can not be the such formation of Fig. 7.For example, also can be with the terminal of PTC element 22a or wiring layer (on this substrate, also forming voltage or the electric current supply wiring 25a) contact that the substrate of PTC element 22a is installed.
In the above description, be for each check with power electrode 12a have relay or relay circuit 1, the formation that can connect and disconnect control respectively describes, but not necessarily must form relay or relay circuit 1 and PTC element 22a with power electrode 12a for complete inspection, also can be for making the essential inspection of the institute's bottom line power electrode 12a that quits work, forming relay or relay circuit 1 and PTC element 22a.
Below, the inspection method of semiconductor integrated circuit of the present invention is described.
At first, before carrying out wafer-level burn, the PTC element 22a that is connected with the underproof semiconductor integrated circuit 11a of DC is disconnected.
At the beginning, notice that the m of Fig. 1 is capable, the relay of capable the 1st row of m or relay circuit 1 are connected.
Under this state, in order to begin wafer-level burn, if never illustrated aging equipment applies voltage to outer electrode 24a, the voltage that then applies is by common electric voltage or electric current supplying wire 25a, relay or relay circuit 1, PTC element 22a and probe terminal 21a, and the inspection that is applied to the semiconductor integrated circuit 11a of capable the 1st row of m is used on the power electrode 12a.
At this moment, if exist DC defective among the hypothesis semiconductor integrated circuit 11a, then owing to flow through unusual a large amount of electric current, therefore also flow through a large amount of electric currents among the PTC element 22a that connects, this PTC element 22a becomes high temperature, become off-state, its resistance value significantly rises, thereby the underproof semiconductor integrated circuit 11a of DC is not applied voltage.In contrast, if semiconductor integrated circuit 11a is qualified product, then PTC element 22a keeps connection with low resistance, can apply voltage like that according to normal on-state.
Then, the relay of capable the 2nd row of m is connected.
Under this state, if outer electrode 24a is applied voltage, if because of semiconductor integrated circuit 11a is that the defective grade of DC flows through unusual a large amount of electric current, then owing to also flow through a large amount of electric currents among the PTC element 22a, this PTC element 22a becomes high temperature, its resistance value significantly rises, and therefore underproof semiconductor integrated circuit 11a is not applied voltage.If semiconductor integrated circuit 11a is qualified product, then PTC element 22a keeps connection with low resistance, can apply voltage like that according to normal on-state.
Same later on enforcement, only classify as up to p, by the underproof semiconductor integrated circuit 11a of such affirmation DC, simultaneously in the temperature of PTC element 22a during descending, keep off-state, if under this state, implement wafer-level burn, then can be with the capable underproof semiconductor integrated circuit 11a of unusual a large amount of electric currents that flows through of whole m from common electric voltage or electric current supply wiring cut-off.
Have again, apply by each row is carried out voltage too, thereby can make the PTC element 22a of the underproof semiconductor integrated circuit 11a of DC of whole semiconductor wafer 10a become off-state.
Here, though also can be without PTC element 22a, and only stop the power supply of the underproof semiconductor integrated circuit 11a of DC is supplied with relay, can detect the underproof semiconductor integrated circuit 11a of DC but for example establish, when wafer-level burn, also must disconnect relay to the underproof semiconductor integrated circuit 11a of DC.Different therewith is that by connecting PTC element 22a, then continuous open relay during PTC element 22a off-state, does not apply voltage to the underproof semiconductor integrated circuit 11a of DC.
In addition, when supposing to have the underproof semiconductor integrated circuit 11a of a plurality of DC, if once whole semiconductor wafer 10a or whole row are applied voltage, under the situation about then having, the electric current that disconnects for the PTC element 22a that makes the underproof semiconductor integrated circuit 11a of each DC is not enough.In the present invention, by semiconductor integrated circuit 11a is applied voltage one by one, the PTC element 22a of the underproof semiconductor integrated circuit 11a of DC is disconnected, thereby can reduce in order to make the PTC element disconnect the supply capacity of required public power.In addition, also can be not limited to one by one,, a plurality of semiconductor integrated circuit 11a be applied voltage at every turn for PTC element 22a is disconnected in the scope of the public power supply capacity of being supplied with.
For example, common electric voltage or electric current supplying wire 25a to every capable branch connect up, the PTC element 22a that is connected in parallel q semiconductor integrated circuit 11a and is connected in series with semiconductor integrated circuit 11a with common electric voltage or electric current supplying wire 25a, in this case, turn-off current at PTC element 22a is I[A] time, the amount of the current capacity maximum demand following formula of the general supply of supply common electric voltage or electric current supplying wire 25a.
Q * I [A] ... formula 1
But,, be i[A at the electric current of the qualified product of establishing semiconductor integrated circuit 11a according to the present invention] time, maximumly also can be the amount of following formula.
(q-1) * i+I [A] ... formula 2
Certainly, the current i of the qualified product of semiconductor integrated circuit 11a is less than the turn-off current I of PTC element 22a.
At last, under the constant situation of state that the PTC element 22a that keeps the underproof semiconductor integrated circuit 11a of the DC that makes whole semiconductor wafer 10a disconnects, concentrate and implement wafer-level burn.
Like this, owing to apply voltage successively by the PTC element that each is connected with semiconductor integrated circuit, thereby can be before carrying out wafer-level burn, the PTC element that all is connected with the underproof semiconductor integrated circuit of DC is disconnected, utilize the PTC element to return the normal condition regular hour before, under the state that makes the PTC element disconnection that all is connected with the underproof semiconductor integrated circuit of DC, concentrate and implement wafer-level burn, therefore when wafer-level burn, can be defective to the DC of semiconductor integrated circuit, the PTC element is disconnected, can improve the reliability of wafer-level burn.
(example 2)
But as previously mentioned, owing to semi-conductive miniaturization, the current i of qualified product has the trend of increase recently, and the electric current under a lot of situations under the high voltage reaches to think it is the big electric current of the such degree of the underproof electric current of DC by mistake.
This example is that the magnitude of current of qualified product is big, is difficult to DC the inspection method of the situation that the magnitude of current when defective distinguished as mentioned above, describes below with reference to Fig. 4.
Figure 4 shows that the I-E characteristic figure of semiconductor integrated circuit.
Generally as shown in Figure 4, the electric current of semiconductor integrated circuit, particularly MOS integrated circuit and voltage square is directly proportional.Different therewith is, inside exists the electric current of the semiconductor integrated circuit of the defective situation that a large amount of electric currents such as power supply short circuit flow through to see in metallic resistance, in most cases with the linear proportional relation of voltage.Therefore, for general aging voltage degree, we can say that voltage is low more, the difference of the qualified product during same voltage and the magnitude of current of DC defective item is big more.
Utilize this characteristic, PTC element before the wafer-level burn of example 1 explanation disconnects in the operation, the voltage that when making relay connect common electric voltage or electric current supply wiring is applied is a little less than usually aging working voltage, by strengthening the difference between current of defective item and qualified product like this, clearly distinguish qualified product and defective item, thereby can obtain enough surpluses, carry out the setting of turn-off current value.
The PTC element that has disconnected when wafer-level burn, even rise to aging voltage, can not revert to normal condition afterwards yet, can stably the voltage that flows through the underproof semiconductor integrated circuit of a large amount of electric currents be insulated.
At this moment, the voltage by applying reduction, reduce the magnitude of current, also can realize.
Like this, when the PTC element that makes example 1 disconnects, by applying the voltage that is lower than aging voltage, can flow through the turn-off current of PTC element really, when wafer-level burn, DC for semiconductor integrated circuit is defective, and the PTC element is disconnected, and can improve the reliability of wafer-level burn.
Relay though can make its action really, according to the characteristic of semiconductor integrated circuit, even a plurality of relay is connected, also can access same effect by connecting one by one.
(example 3)
Have again, in semiconductor integrated circuit, particularly MOS integrated circuit, under aging condition, add the disconnection leakage current, the trend that exists current i to increase.Correspondingly, the electric current under the high temperature reaches to think it is the big electric current of the such degree of the underproof electric current of DC by mistake under a lot of situation.
In this example, as mentioned above, be because the magnitude of current of hot environment and qualified product is big, the inspection method that is difficult to DC the situation that the magnitude of current when defective distinguished, describe below with reference to Fig. 5.
Figure 5 shows that the electric current-temperature characteristics figure of semiconductor integrated circuit.
Generally as shown in Figure 5, the disconnection leakage current of semiconductor integrated circuit, particularly MOS integrated circuit is pressed the exponential function variation with respect to temperature.Different therewith is, inside exists the electric current of the semiconductor integrated circuit of the defective situation that a large amount of electric currents such as power supply short circuit flow through to see in metallic resistance, in most cases carries out linearity with respect to temperature and bears variation.Therefore, for general aging temperature degree, temperature is low more, and the difference of the magnitude of current of qualified product under the same temperature and DC defective item is big more.
Utilize this characteristic, PTC element before the wafer-level burn of example 1 explanation disconnects in the operation, make the temperature when relay is connected be lower than usually aging serviceability temperature, by strengthening the difference between current of defective item and qualified product like this, clearly distinguish qualified product and defective item, thereby can obtain enough surpluses, carry out the setting of turn-off current value.
The PTC element that has disconnected when wafer-level burn, even rise to aging temperature, can not revert to normal condition afterwards yet, can stably the voltage that flows through the underproof semiconductor integrated circuit of a large amount of electric currents be cut off.
Like this, when the PTC element that makes example 1 disconnects, by applying voltage being lower than under the temperature of aging temperature, can flow through the turn-off current of PTC element really, when wafer-level burn, DC for semiconductor integrated circuit is defective, and the PTC element is disconnected, and can improve the reliability of wafer-level burn.
Relay though can make its action really, according to the characteristic of semiconductor integrated circuit, even a plurality of relay is connected, also can access same effect by connecting one by one.
(example 4)
Example 4 of the present invention be semiconductor integrated circuit when having a plurality of power supply semiconductor checking device and the inspection method of semiconductor integrated circuit, be described in detail below with reference to Fig. 2.
Fig. 2 is the key diagram of the semiconductor checking device of explanation example 4.
In Fig. 2, the 1st, the relay of example 4 of the present invention or relay circuit respectively connect one with the voltage of 25b or the voltage of electric current supplying wire and 25c or the different voltage or the electric current supplying wire of electric current supplying wire respectively.
Among the figure, the 2nd, check and use power electrode, the 3rd, the inspection power electrode with checking that usefulness power electrode 2 is different by the PTC element of 22a, is connected in series with relay or relay circuit 1 respectively.The 4th, relay control signal from the PTC element 22a that is connected with supply line 25b with check between the power electrode with power electrode 2 and export, is to control the relay that is connected with supply line 25c or the control signal of relay circuit 1.Here, establishing the relay or the relay circuit 1 that are connected with supply line 25c connects when relay control signal 4 is logic " height " level.
Following inspection method of the present invention is described.
At first, connect relay that is connected with supply line 25b or the relay circuit 1 of Fig. 2.
Then, identical with example 1～example 3, before wafer-level burn, in order to disconnect PTC element 22a, if never illustrated aging equipment applies voltage to supply line 25b, the voltage that then applies imposes on the inspection power electrode 2 of semiconductor integrated circuit 11a by voltage or electric current supplying wire 25b, relay or relay circuit 1, PTC element 22a and probe terminal 21a.
At this moment, PTC element 22a is as if flow through unusual a large amount of electric current because of the defective grade of the DC of semiconductor integrated circuit 11a, then owing to also flow through a large amount of electric currents among the PTC element 22a, this PTC element 22a becomes high temperature, its resistance value significantly rises (disconnection), therefore the underproof semiconductor integrated circuit 11a of DC is not applied voltage.Then and since this PTC element 22a with check that with not applying voltage between the power electrode 3 so the relay of supply line 25c or relay circuit 1 keep off-state, can cut off inspection power electrode 3 simultaneously with checking with power electrode 2.
Here, even the control relation of the relay that is connected with supply line 25b and supply line 25c or relay circuit 1 and relay control signal is conversely, action too certainly.
In addition, if semiconductor integrated circuit 11a is qualified product, then because the voltage of supply line 25b passes through relay or relay circuit 1 and PTC element 22a, normally pass to and check with power electrode 2, therefore relay that is connected with supply line 25c or relay circuit 1 are also connected simultaneously, voltage can be passed to and check with power electrode 3.
In this example, the action of a semiconductor integrated circuit 11a has been described, but the situation that connects a plurality of semiconductor integrated circuit 11a as implementing form 1 too.In addition, even the power supply number is more than three, but by will also tackling from the output valve of the PTC element control signal as the relay that be connected with the supply line of other power supply.
About this example, also implement the inspection method same with example 2,3, the PTC element is disconnected.
As mentioned above, at example 1 to the semiconductor integrated circuit of example 3, when a plurality of working power is arranged, by will when this PTC element is off-state, controlling from the output valve of a PTC element control signal as the relay that be connected with the supply line of other power supply, the relay that is connected with the supply line of other power supply is disconnected, thereby become moment of off-state at this PTC element,, also can stop supply power for the supply line of other power supply.
(example 5)
Example 5 of the present invention is that semiconductor integrated circuit has inspection with power electrode and the semiconductor checking device when checking with signal electrode and the inspection method of semiconductor integrated circuit, is described in detail below with reference to Fig. 3.
Fig. 3 is the key diagram of the semiconductor checking device of explanation example 5.
In Fig. 3, the 1st, the relay of example 5 of the present invention or relay circuit are connected with the common electric voltage of 25a or the common signal supply line of electric current supplying wire and 26a respectively.
Among the figure, 12a checks to use power electrode, and PTC element by 22a and relay or relay circuit 1 are connected in series.13a checks to use signal electrode, is connected with common signal supply line 26a by relay or relay circuit 1.The control connection inspection is with signal electrode 13a and the relay of common signal supply line 26a or the relay control signal 4a of relay circuit 1, is with controlling the relay that is connected with common signal supply line 26a or the control signal of relay circuit 1 between the power electrode 12a from PTC element 22a and inspection.Here, relay or the relay circuit 1 of establishing common signal supply line 26a connected when relay control signal 4 is logic " height " level.
Following inspection method of the present invention is described.
At first, connect relay that is connected with supply line 25a or the relay circuit 1 of Fig. 3.
Then, identical with example 1～example 3, before wafer-level burn, in order to disconnect PTC element 22a, if never illustrated aging equipment applies voltage to supply line 25a, the voltage that then applies imposes on the inspection power electrode 12a of semiconductor integrated circuit 11a by common electric voltage or electric current supplying wire 25a, relay or relay circuit 1, PTC element 22a and probe terminal 21a.
At this moment, PTC element 22a is as if flow through unusual a large amount of electric current because of the defective grade of the DC of semiconductor integrated circuit 11a, then owing to also flow through a large amount of electric currents among the PTC element 22a, this PTC element 22a becomes high temperature, its resistance value significantly rises (disconnection), therefore underproof semiconductor integrated circuit 11a is not applied voltage.Then and since this PTC element 22a with check that therefore relay or the relay circuit 1 that is connected with supply line 26a kept off-state with not applying voltage between the power electrode 2, can cut off inspection signal electrode 13a simultaneously with power electrode 12a with inspection.
Here, even the control relation of the relay that is connected with supply line 25a and supply line 26a or relay circuit 1 and relay control signal is conversely, action too certainly.
In addition, if semiconductor integrated circuit 11a is qualified product, then because the voltage of supply line 25a passes through relay or relay circuit 1 and PTC element 22a, normally pass to inspection power electrode 12a, therefore also connect simultaneously with checking the relay or the relay circuit 1 that contact with signal electrode 13a, signal can be passed to inspection signal electrode 13a.
In this example, the action of a semiconductor integrated circuit 11a has been described, but the situation that connects a plurality of semiconductor integrated circuit 11a as implementing form 1 too.
About this example, also implement the inspection method same with example 2,3, the PTC element is disconnected.
As mentioned above, at example 1 to the semiconductor integrated circuit of example 3, except checking, when also having one or more inspections to use signal electrode with power electrode, by will be from the control signal of the relay that is connected with signal electrode with the output valve conduct of checking the PTC element that is connected with power electrode 12a and inspection, when this PTC element is off-state, control, make with checking the relay that is connected with signal electrode and disconnect, thereby become moment of off-state at this PTC element, can stop checking signal input with signal electrode.
(example 6)
In the above description, what illustrate is in wearing out with concentrating of wafer state the defective semiconductor integrated circuit of DC to be stopped the situation that power supply is supplied with, carry out assembly and the defective semiconductor integrated circuit of DC is stopped the situation that power supply is supplied with when aging but on burn-in board, the semiconductor integrated circuit after installing concentrated, also can be identical with each example of example 1～example 5.
Example 6 of the present invention is about the PTC element on the burn-in board and the example of relay, is elaborated with Fig. 6.This is the formation that the probe card of example 1 is replaced as burn-in board.Figure 6 shows that the connection status figure of the semiconductor checking device of the invention process form 6.
In Fig. 6,22c is the PTC element, and 24c is an outer electrode, and 25d is common electric voltage or electric current supplying wire.The planar structure at the back side of the probe card in above formation and the conventional art shown in Figure 7 is identical.10c is a burn-in board, and 11c is the semiconductor integrated circuit of installing, and 12c checks to use power electrode.Then, the 1st, relay that the present invention is relevant or relay circuit.
Relay or relay circuit 1 are connected in parallel with common electric voltage or electric current supplying wire 25d, and PTC element 22c and relay or relay circuit 1 are connected in series, and 21c is connected with power electrode 12c with inspection by the plate wiring.In addition, in Fig. 6, relay or relay circuit 1 are connected between PTC element and voltage or the electric current supplying wire 25d, but also can be connected between PTC element 22c and each plate wiring 21c.
In the example of Fig. 6, common electric voltage or electric current supplying wire 25d supply with from outer electrode 24c, are branched off into many supply lines that are connected with the semiconductor integrated circuit 11c of every row.
In the above description, be for each check with power electrode 12c have relay or relay circuit 1, the formation that can connect and disconnect control respectively describes, but not necessarily must form relay or relay circuit 1 and PTC element 22c for complete inspection with power electrode 12c, also can be that essential inspection forms relay or relay circuit 1 and PTC element 22c with power electrode 12c for the feasible institute's bottom line that quits work.
Below, the inspection method of semiconductor integrated circuit of the present invention is described.
At first, before wearing out, the PTC element 22c that is connected with the underproof semiconductor integrated circuit 11c of DC is disconnected.
At the beginning, notice that the m of Fig. 6 is capable, the relay of capable the 1st row of m or relay circuit 1 are connected.
Under this state, aging in order to begin assembly, if never illustrated aging equipment applies voltage to outer electrode 24c, the voltage that then applies is by common electric voltage or electric current supplying wire 25d, relay or relay circuit 1, PTC element 22c and plate wiring 21c, and the inspection that is applied to the semiconductor integrated circuit 11c of capable the 1st row of m is used on the power electrode 12c.
At this moment, if exist DC defective among the hypothesis semiconductor integrated circuit 11c, then owing to flow through unusual a large amount of electric current, therefore also flow through a large amount of electric currents among the PTC element 22c that connects, this PTC element 22c becomes high temperature, become off-state, its resistance value significantly rises, thereby the underproof semiconductor integrated circuit 11c of DC is not applied voltage.In contrast, if semiconductor integrated circuit 11c is qualified product, then PTC element 22c keeps connection with low resistance, can apply voltage like that according to normal on-state.
Then, the relay of capable the 2nd row of m is connected.
Under this state, if outer electrode 24c is applied voltage, if because of semiconductor integrated circuit 11c is that the defective grade of DC flows through unusual a large amount of electric current, then owing to also flow through a large amount of electric currents among the PTC element 22c, this PTC element 22c becomes high temperature, its resistance value significantly rises, and therefore underproof semiconductor integrated circuit 11c is not applied voltage.If semiconductor integrated circuit 11c is qualified product, then PTC element 22c keeps connection with low resistance, can apply voltage like that according to normal on-state.
Same later on enforcement, only classify as up to p, by the underproof semiconductor integrated circuit 11c of such affirmation DC, simultaneously in the temperature of PTC element 22c during descending, keep off-state, if implementing to concentrate under this state wears out, then can be with the capable underproof semiconductor integrated circuit 11c of unusual a large amount of electric currents that flows through of whole m from common electric voltage or electric current supply wiring cut-off.
Have again, apply by each row is carried out voltage too, thereby can make the PTC element 22c of the underproof semiconductor integrated circuit 11c of DC of whole burn-in board 10c become off-state.
Here, though also can be without PTC element 22c, and only stop the power supply of the underproof semiconductor integrated circuit 11c of DC is supplied with relay, can detect the underproof semiconductor integrated circuit 11c of DC but for example establish, when concentrated wearing out, also must disconnect relay to the underproof semiconductor integrated circuit 11c of DC.Different therewith is that by connecting PTC element 22c, then continuous open relay during PTC element 22c off-state, does not apply voltage to the underproof semiconductor integrated circuit 11c of DC.
In addition, when supposing to have the underproof semiconductor integrated circuit 11c of a plurality of DC, if once whole burn-in board 10c or whole row are applied voltage, under the situation about then having, the electric current that disconnects for the PTC element 22c that makes the underproof semiconductor integrated circuit 11c of each DC is not enough.In the present invention, by semiconductor integrated circuit 11c is applied voltage one by one, the PTC element 22c of the underproof semiconductor integrated circuit 11c of DC is disconnected, thereby can reduce in order to make the PTC element disconnect the supply capacity of required public power.In addition, also can be not limited to one by one,, a plurality of semiconductor integrated circuit 11c be applied voltage at every turn for PTC element 22c is disconnected in the scope of the public power supply capacity of being supplied with.
For example, common electric voltage or electric current supplying wire 25d to every capable branch connect up, the PTC element 22c that is connected in parallel q semiconductor integrated circuit 11c and is connected in series with semiconductor integrated circuit 11c with common electric voltage or electric current supplying wire 25d, in this case, turn-off current at PTC element 22c is I[A] time, the amount of the current capacity maximum demand following formula of the general supply of supply common electric voltage or electric current supplying wire 25c.
Q * I [A] ... formula 3
But,, be i[A at the electric current of the qualified product of establishing semiconductor integrated circuit 11c according to the present invention] time, maximumly also can be the amount of following formula.
(q-1) * i+I[A] ... formula 4
Certainly, the current i of the qualified product of semiconductor integrated circuit 11c is less than the turn-off current I of PTC element 22c.
At last, under the constant situation of state that the PTC element 22c that keeps the underproof semiconductor integrated circuit 11c of the DC that makes whole burn-in board 10c disconnects, concentrate implement aging.
Like this, owing to apply voltage successively by the PTC element that each is connected with semiconductor integrated circuit, thereby can be before wearing out, the PTC element that all is connected with the underproof semiconductor integrated circuit of DC is disconnected, utilize the PTC element to return the normal condition regular hour before, under the state that makes the PTC element disconnection that all is connected with the underproof semiconductor integrated circuit of DC, concentrate and implement to wear out, therefore when assembly is aging, can be defective to the DC of semiconductor integrated circuit, the PTC element is disconnected, can improve the aging reliability of assembly.
This is the effect same with the example 1 of wafer-level burn.
(example 7)
But as previously mentioned, owing to semi-conductive miniaturization, the current i of qualified product has the trend of increase recently, and the electric current under a lot of situations under the high voltage reaches to think it is the big electric current of the such degree of the underproof electric current of DC by mistake.
This example is that the magnitude of current of qualified product is big, is difficult to DC the inspection method of the situation that the magnitude of current when defective distinguished as mentioned above, describes below with reference to Fig. 4.
Generally as shown in Figure 4, the electric current of semiconductor integrated circuit, particularly MOS integrated circuit and voltage square is directly proportional.Different therewith is, inside exists the electric current of the semiconductor integrated circuit of the defective situation that a large amount of electric currents such as power supply short circuit flow through to see in metallic resistance, in most cases with the linear proportional relation of voltage.Therefore, for general aging voltage degree, we can say that voltage is low more, the difference of the qualified product during same voltage and the magnitude of current of DC defective item is big more.
Utilize this characteristic, PTC element before concentrating of example 6 explanations is aging disconnects in the operation, the voltage that when making relay connect common electric voltage or electric current supply wiring is applied is a little less than usually aging working voltage, by strengthening the difference between current of defective item and qualified product like this, clearly distinguish qualified product and defective item, thereby can obtain enough surpluses, carry out the setting of turn-off current value.
The PTC element that has disconnected when aging, even rise to aging voltage, can not revert to normal condition afterwards yet, can stably the voltage that flows through the underproof semiconductor integrated circuit of a large amount of electric currents be insulated.
At this moment, the voltage by applying reduction, reduce the magnitude of current, also can realize.
Like this, when the PTC element that makes example 6 disconnects, by applying the voltage that is lower than aging voltage, can flow through the turn-off current of PTC element really, when assembly is aging, DC for semiconductor integrated circuit is defective, and the PTC element is disconnected, and can improve the aging reliability of assembly.
Relay though can make its action really, according to the characteristic of semiconductor integrated circuit, even a plurality of relay is connected, also can access same effect by connecting one by one.
This is the effect same with the example 1 of wafer-level burn.
Content shown in the example 3～5 of wafer-level burn is also identical with example 6 and example 7, by relay or relay circuit and the PTC element that between probe terminal that is formed on probe card between wiring of the plate of burn-in board and the supply line and supply line, forms, also can implement even assembly is aging, and can access same effect.
Claims (13)
1. semiconductor checking device to a plurality of semiconductor integrated circuit a plurality of electrodes with input/output signal or supply voltage or earthed voltage, that form on the wafer, is concentrated and is worn out, and it is characterized in that having:
A plurality of probes that each electrode of the whole described electrodes that possess with whole described semiconductor integrated circuit is connected, checks;
The described electrode that the signal that described each semiconductor integrated circuit is possessed is used, many barss wirings of using by the described signal of described probe input and output;
The described electrode that whole power supply that described each semiconductor integrated circuit is possessed is used is supplied with the power-supply wiring of described supply voltage by described probe;
To whole earthy described electrode that described each semiconductor integrated circuit possesses, supply with the ground connection wiring of described earthed voltage by described probe;
Be inserted in described power-supply wiring and all or the relay between the described electrode used of at least one power supply; And
Be inserted in the PTC element between the electrode that described relay and described power supply use,
It is connection status that each described semiconductor integrated circuit is made described relay successively, applies high voltage, under the state that the described PTC element that makes the whole described semiconductor integrated circuit that are confirmed to be defective item disconnects, carries out described aging.
2. semiconductor checking device as claimed in claim 1 is characterized in that,
Between the electrode that described signal routing and described each signal are used, also insert the signal relay, establish described signal with the control signal of relay output signal for the described PTC element that is connected with same described semiconductor integrated circuit.
3. semiconductor checking device is concentrated a plurality of semiconductor integrated circuit a plurality of electrodes with input/output signal or supply voltage or earthed voltage, that form on the wafer, wears out, and it is characterized in that having:
A plurality of probes that each electrode of the whole described electrodes that possess with whole described semiconductor integrated circuit is connected, checks;
The described electrode that the signal that described each semiconductor integrated circuit is possessed is used, many barss wirings of using by the described signal of described probe input and output;
Each electrode of the described electrode that the power supply of the same voltage that described each semiconductor integrated circuit is possessed by described probe is used is supplied with many power-supply wirings of corresponding supply voltage;
To whole earthy described electrode that described each semiconductor integrated circuit possesses, supply with the ground connection wiring of described earthed voltage by described probe;
Be inserted in described power-supply wiring and all or the relay between the described electrode used of at least one power supply; And
Be inserted in the PTC element between the electrode that described relay and described power supply use,
The control signal of the relay that is connected with electrode that a corresponding power supply of supply voltage is used from outside input, the output signal of an input and a described corresponding described PTC element of supply voltage, control signal as the relay that is connected with electrode that the corresponding power supply of supply voltage is in addition used, the relay that the electrode used with a described corresponding power supply of supply voltage is connected to each described semiconductor integrated circuit is a connection status, apply high voltage, under the state that the described PTC element that makes the whole described semiconductor integrated circuit that are confirmed to be defective item disconnects, carry out described aging.
4. the inspection method of a semiconductor integrated circuit, be to utilize the PTC element to concentrate the inspection method of the semiconductor integrated circuit wear out under stopping the described semiconductor integrated circuit power supply condition of supplying of defective item to a plurality of semiconductor integrated circuit, it is characterized in that having following operation:
To the each one or more operations of carrying out the power supply supply successively, making the described PTC element disconnection that is connected with the described semiconductor integrated circuit of defective item of described semiconductor integrated circuit; And
Under the state that the described PTC element that is connected with described semiconductor integrated circuit is disconnected, concentrate the operation of aging whole described semiconductor integrated circuit.
5. the inspection method of semiconductor integrated circuit as claimed in claim 4 is characterized in that,
Use is lower than the voltage of aging voltage, the voltage when supplying with as described power supply.
6. the inspection method of semiconductor integrated circuit as claimed in claim 5 is characterized in that,
Utilize to supply with the electric current of the power supply of described voltage, the voltage when adjusting described power supply and supplying with.
7. the inspection method of semiconductor integrated circuit as claimed in claim 4 is characterized in that,
Use the output signal of described PTC element, control signal input described semiconductor integrated circuit.
8. the inspection method of semiconductor integrated circuit as claimed in claim 4 is characterized in that,
Under the low temperature of the temperature when aging, carry out described power supply and supply with.
9. the inspection method of semiconductor integrated circuit as claimed in claim 4 is characterized in that,
Have at described semiconductor integrated circuit under the situation of a plurality of power supplys,
The output signal of a use and a corresponding PTC element of supply voltage is controlled applying supply voltage with the corresponding PTC element of other supply voltage.
10. the inspection method of semiconductor integrated circuit as claimed in claim 4 is characterized in that,
Described wearing out is to the concentrated wafer-level burn that carries out of the described a plurality of semiconductor integrated circuit that form on the wafer.
11. the inspection method of semiconductor integrated circuit as claimed in claim 4 is characterized in that,
Described semiconductor integrated circuit is the semiconductor integrated circuit that installs that is placed on the burn-in board, described aging be to concentrate the assembly that carries out aging to the described a plurality of semiconductor integrated circuit that are placed on the described burn-in board.
12. a semiconductor checking device is installed a plurality of semiconductor integrated circuit of a plurality of electrodes with input/output signal or supply voltage or earthed voltage and described semiconductor integrated circuit is concentrated and wears out, and it is characterized in that having:
A plurality of plate cloth line terminals that each electrode of the whole described electrodes that possess with whole described semiconductor integrated circuit is connected, checks;
The described electrode that the signal that described each semiconductor integrated circuit is possessed is used, many barss wirings of using by the described signal of described plate cloth line terminals input and output;
The described electrode that whole power supply that described each semiconductor integrated circuit is possessed is used is by the power-supply wiring of the described supply voltage of described plate wiring terminal feeding;
Whole earthy described electrode to described each semiconductor integrated circuit possesses connects up by the ground connection of the described earthed voltage of described plate wiring terminal feeding;
Be inserted in described power-supply wiring and all or the relay between the described electrode used of at least one power supply; And
Be inserted in the PTC element between the electrode that described relay and described power supply use,
It is connection status that each described semiconductor integrated circuit is made described relay successively, applies high voltage, under the state that the described PTC element that makes the whole described semiconductor integrated circuit that are confirmed to be defective item disconnects, carries out described aging.
13. semiconductor checking device as claimed in claim 12 is characterized in that,
Between the electrode that described signal routing and described each signal are used, also insert the signal relay, establish described signal with the control signal of relay output signal for the described PTC element that is connected with same described semiconductor integrated circuit.
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| Application Number | Priority Date | Filing Date | Title |
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| JP2006155508 | 2006-06-05 | ||
| JP2006155508 | 2006-06-05 | ||
| JP2007057930 | 2007-03-08 |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101937030A (en) * | 2009-06-26 | 2011-01-05 | 日本电产理德株式会社 | Substrate inspection method |
| CN108156820A (en) * | 2015-04-28 | 2018-06-12 | 新东工业株式会社 | Check device and inspection method |
| CN110431430A (en) * | 2017-03-31 | 2019-11-08 | 三菱电机株式会社 | For controlling the method and multi-chip health monitoring device of the health of multi-chip power module |
| CN110568338A (en) * | 2019-10-18 | 2019-12-13 | 厦门芯泰达集成电路有限公司 | Testing device for high-molecular polymer positive coefficient temperature element |
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2007
- 2007-04-19 CN CN 200710101356 patent/CN101101886A/en active Pending
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101937030A (en) * | 2009-06-26 | 2011-01-05 | 日本电产理德株式会社 | Substrate inspection method |
| CN101937030B (en) * | 2009-06-26 | 2013-03-27 | 日本电产理德株式会社 | Substrate inspection method |
| CN108156820A (en) * | 2015-04-28 | 2018-06-12 | 新东工业株式会社 | Check device and inspection method |
| US10578663B2 (en) | 2015-04-28 | 2020-03-03 | Sintokogio, Ltd. | Inspection device and inspection method for performing dynamic and static characteristics tests |
| CN108156820B (en) * | 2015-04-28 | 2020-07-14 | 新东工业株式会社 | Inspection apparatus and inspection method |
| CN110431430A (en) * | 2017-03-31 | 2019-11-08 | 三菱电机株式会社 | For controlling the method and multi-chip health monitoring device of the health of multi-chip power module |
| CN110431430B (en) * | 2017-03-31 | 2021-08-24 | 三菱电机株式会社 | Method for controlling health of multi-chip power module and multi-chip health monitoring device |
| CN110568338A (en) * | 2019-10-18 | 2019-12-13 | 厦门芯泰达集成电路有限公司 | Testing device for high-molecular polymer positive coefficient temperature element |
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