CN101097162A - Ultraviolet mornitoring system and ultraviolet irradiation device - Google Patents
Ultraviolet mornitoring system and ultraviolet irradiation device Download PDFInfo
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- CN101097162A CN101097162A CNA2007101082437A CN200710108243A CN101097162A CN 101097162 A CN101097162 A CN 101097162A CN A2007101082437 A CNA2007101082437 A CN A2007101082437A CN 200710108243 A CN200710108243 A CN 200710108243A CN 101097162 A CN101097162 A CN 101097162A
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J19/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
- B01J19/08—Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor
- B01J19/12—Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor employing electromagnetic waves
- B01J19/122—Incoherent waves
- B01J19/123—Ultraviolet light
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J1/00—Photometry, e.g. photographic exposure meter
- G01J1/02—Details
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J1/00—Photometry, e.g. photographic exposure meter
- G01J1/42—Photometry, e.g. photographic exposure meter using electric radiation detectors
- G01J1/429—Photometry, e.g. photographic exposure meter using electric radiation detectors applied to measurement of ultraviolet light
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J2219/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
- B01J2219/08—Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor
- B01J2219/12—Processes employing electromagnetic waves
- B01J2219/1203—Incoherent waves
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- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
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Abstract
The present invention provides an ultraviolet monitoring system which can accurately monitor the high strength ultraviolet for a long time and the ultraviolet irradiation device. the ultraviolet monitoring system (4) is provided with the following components: a power supply device (11) which supplies electric power; an ultraviolet source (12) which gets electric power from the power supply device and irradiate the ultraviolet; an ultraviolet sensor (13) which is provided with a diamond layer (22) as a detecting part and outputs the electrical signal corresponding to the ultraviolet strength according to the electric charge generated on the diamond layer (22); and a control part (14) which controls the electricity supply of the power supply device (11) thereby controlling the ultraviolet outputting of the ultraviolet source (12) on the base of the electrical signal.
Description
Technical field
The present invention relates to ultraviolet mornitoring system and ultraviolet lamp.
Background technology
Always, known have a ultraviolet lamp, has ultraviolet sources such as xenon excimer lamp or Cooper-Hewitt lamp, and by carrying out predetermined process from these ultraviolet sources to the irradiation object irradiation ultraviolet radiation.This ultraviolet lamp for example is used to surfaction or other various uses of dry type cleaning, film and the resin etc. of flat-panel monitor and semiconductor etc.In addition, in such ultraviolet lamp, be provided with the ultraviolet mornitoring system that the uitraviolet intensity of ultraviolet source irradiation is monitored.This ultraviolet mornitoring system constitutes: have the UV sensor that is made of fluorescent glass sensor or silicon photoelectric diode etc., use this UV sensor that uitraviolet intensity is measured and monitored.And, because the sensitivity scope of the UV sensor that is made of fluorescent glass sensor or silicon photoelectric diode etc. extends to visible light field or infrared ray field from ultraviolet field, so be provided with optical filter on UV sensor, this optical filter is used to get rid of visible light or the ultrared influence that becomes disturbing factor when detecting ultraviolet ray.
Also have, other example as existing ultraviolet mornitoring system, also known have by irradiation ultraviolet radiation being made a part of oxygen in device ozone concentration that produces that changes monitor, thereby monitor system's (for example: refer to Patent Document 1) of uitraviolet intensity indirectly.
[patent documentation 1] spy opens flat 8-332371 communique
In the above-mentioned UV sensor that constitutes by fluorescent glass sensor or silicon photoelectric diode etc., be provided with the optical filter that is used to get rid of visible light or infrared ray influence, but because a little less than this optical filter is highly brittle for ultraviolet ray, so can go bad inevitably, thus deterioration at short notice.Moreover, when illuminated high-intensity when ultraviolet ray, have not only that optical filter is damaged, even the problem also damaged of UV sensor.Therefore, in existing ultraviolet mornitoring system, be difficult to for a long time high-intensity ultraviolet ray be monitored.
In addition, in above-mentioned patent documentation 1 disclosed ultraviolet mornitoring system, by the concentration indirect of the ozone that irradiation ultraviolet radiation produced detect ultraviolet intensity, but since the unstable chemcial property of ozone be difficult to exactly ozone concentration be monitored.Therefore, also be difficult to monitor exactly ultraviolet intensity.
Summary of the invention
The present invention designs in order to address the above problem just, and its purpose is, a kind of ultraviolet mornitoring system and ultraviolet lamp of can be for a long time, exactly high-intensity ultraviolet ray being monitored is provided.
In order to reach above-mentioned purpose, ultraviolet mornitoring system of the present invention has: the supply unit of supply electric power; By obtaining electric power and the ultraviolet source of irradiation ultraviolet radiation from described supply unit; UV sensor, it has the test section that is made of adamas that generates the electric charge of respective amount according to the ultraviolet intensity of accepting, and according to the electric charge that is generated by this test section, exports the electric signal corresponding with described uitraviolet intensity; Control part, it controls the electric power supply of described supply unit based on described electric signal, thereby controls the ultraviolet ray output of described ultraviolet source.
In this ultraviolet mornitoring system, have by the uitraviolet intensity that is subjected to light according to UV sensor and produce the test section that the adamas of respective amount electric charge constitutes.Because this test section that is made of adamas has favorable durability to ultraviolet ray, so, also can suppress the deterioration of UV sensor even under the high-intensity ultraviolet situation of long-time irradiation.Therefore, can monitor high-intensity ultraviolet ray for a long time.Moreover, in this ultraviolet mornitoring system, owing to can use UV sensor with the test section that constitutes by adamas, directly the uitraviolet intensity of ultraviolet source irradiation is measured, so with compare by the situation of uitraviolet intensity being monitored by the concentration of ozone that irradiation ultraviolet radiation produced, unstable chemcial property, can monitor ultraviolet intensity exactly.Therefore, in this ultraviolet mornitoring system, can be for a long time, exactly high-intensity ultraviolet ray is monitored, and can be based on the electric signal that produces by above-mentioned test section, for a long time, exactly the output of ultraviolet source is controlled.In addition, the test section that has adamas to constitute only has sensitivity to ultraviolet ray, and the light of ultraviolet rays such as visible light, infrared ray wavelength is not in addition had sensitivity.Thus, also can not be provided for getting rid of the optical filter of influences such as visible light, infrared ray, therefore can reduce number of components.
In above-mentioned ultraviolet mornitoring system, described control part is preferably and comprises: the amplifier circuit that described electric signal is amplified, will be converted into the arithmetic unit of ultraviolet ray amount and the control signal input circuit that is input to this supply unit from the power controlling signal that described arithmetic unit receives the data of ultraviolet ray amount and will be used to adjust the electric power supply of described supply unit on the data basis of this ultraviolet ray amount by the electric signal that described amplifier circuit amplifies.Have formation like this, just can on the basis of the electric signal that UV sensor is exported, the electric power supply of supply unit be controlled and the ultraviolet ray output of ultraviolet source is controlled by control part.
Ultraviolet lamp of the present invention possesses above-mentioned any one described ultraviolet mornitoring system, from described ultraviolet source to the object irradiation ultraviolet radiation.
In this ultraviolet lamp, owing to have an above-mentioned ultraviolet mornitoring system, therefore can obtain the effect same with above-mentioned ultraviolet mornitoring system, that is, and can be for a long time, exactly high-intensity ultraviolet ray is monitored.
In above-mentioned ultraviolet lamp, be preferably and possess: take in the 1st chamber of described ultraviolet source, be connected with described the 1st chamber and be provided with and take in the 2nd chamber of described irradiation object thing and separate space described the 1st chamber in and the space described the 2nd chamber in and by can seeing through the next door that ultraviolet material constitutes, the ultraviolet ray that the ultraviolet source in described the 1st chamber shines shines on the irradiation object thing in described the 2nd chamber through described next door.Have formation like this, just can be in ultraviolet source and irradiation object thing be contained in ultraviolet lamp in other respectively, the ultraviolet ray that ultraviolet source is sent easily shines on the object.
In this case, being preferably described UV sensor is set in described the 1st chamber.Have formation like this, just can carry out in-plant direct measurement by the ultraviolet ray that UV sensor is sent the ultraviolet source that is located in the 1st chamber, thus the real-time monitoring that realization is carried out the ultraviolet ray of ultraviolet source irradiation.Therefore, can find the situation that ultraviolet source is not lit a lamp or the exposure intensity of ultraviolet source descends immediately.
Moreover, in this case, be preferably and possess the temperature control device that the temperature of described UV sensor is controlled.When in the 1st chamber that is being provided with ultraviolet source UV sensor being set, might be very near because of the distance between UV sensor and the ultraviolet source, make UV sensor directly be subjected to ultraviolet irradiation, thereby the phenomenon that its temperature raises appears, when the temperature of UV sensor exceeds certain scope, can reduce ultraviolet measuring accuracy.In this case, if also possess the temperature control device that the above-mentioned temperature to UV sensor is controlled, just the temperature of UV sensor can be controlled in the above-mentioned specialized range, thus the reduction of the measuring accuracy of inhibition UV sensor.
In possessing the formation in the 1st chamber of taking in above-mentioned ultraviolet source and the 2nd chamber of taking in the irradiation object thing, the established part that is preferably in the wall portion that constitutes described the 1st chamber is provided with peristome, and be provided with by seeing through member through the 1st ultraviolet ray that ultraviolet material constitutes to cover this peristome, described UV sensor is set at the outside in described the 1st chamber and accepts to see through through described the 1st ultraviolet ray the ultraviolet ray of member.Have formation like this, just UV sensor can be arranged on each position in the outside, the 1st chamber, compare, can improve the configuration degree of freedom of UV sensor with the situation that UV sensor is arranged in the 1st chamber.In addition,, compare, can easily maintain and manage UV sensor with the situation that UV sensor is arranged in the 1st chamber owing to the outside that UV sensor is arranged on the 1st chamber.In addition, on the position that UV sensor is arranged on away from the ultraviolet source in the 1st chamber, even for a long time high-intensity ultraviolet ray is measured, the temperature that also can suppress UV sensor raises, and prevents that it from exceeding the temperature range that can guarantee measuring accuracy.
In possessing the formation in the 1st chamber of taking in above-mentioned ultraviolet source and the 2nd chamber of taking in the irradiation object thing, described UV sensor is preferably and is set in described the 2nd chamber.So constitute, can carry out high-precision monitoring to the actual uitraviolet intensity that shines on the object that is located in the 1st chamber by the UV sensor low coverage is liftoff.And, on the data basis of the ultraviolet irradiation intensity that monitoring is obtained, can control the uitraviolet intensity that shines on the object accurately.
In this case, be preferably to be provided with to cover the cover portion around the described UV sensor and on the part of this cover portion, be provided with and see through ultraviolet ultraviolet incident section, side in the space in described the 2nd chamber of described ultraviolet incident section, shutter mechanism also is set, and this shutter mechanism can make described ultraviolet incident section switch mutually between shielding status that covers described ultraviolet incident section and the open state that described ultraviolet incident section do not covered.So with cover portion cover UV sensor around, even in the 2nd chamber, produce under the situation such as ozone, also can make UV sensor not be subjected to the influence of atmosphere such as ozone and ultraviolet ray is measured.And, by ultraviolet incident section is set, promptly use cover portion to cover UV sensor, ultraviolet ray also can see through ultraviolet incident section and be injected into UV sensor, so can measure ultraviolet ray.In addition, in the 2nd chamber,, can produce the material of regulation or disperse along with ultraviolet ray shines on the object.Even in this case, when not measuring ultraviolet ray, if cover a side in the space in the 2nd chamber of ultraviolet incident section by above-mentioned shutter mechanism, compare with the situation that shutter mechanism is not set, can be suppressed in above-mentioned the 2nd chamber material that produces or disperse and adhere to and be deposited on the ultraviolet incident section, thereby suppress to hinder the ultraviolet reduction of injecting the ultraviolet measurement precision that is caused on the ultraviolet incident section because of these materials adhere to and are deposited in.
In possessing the formation in the 1st chamber of taking in above-mentioned ultraviolet source and the 2nd chamber of taking in the irradiation object thing, be preferably on the established part of the wall portion that constitutes described the 2nd chamber peristome is set, and be provided with cover this peristome, see through member by seeing through the 2nd ultraviolet ray that ultraviolet material constitutes, described UV sensor is set at the outside in described the 2nd chamber and receives and sees through the ultraviolet ray that described the 2nd ultraviolet ray sees through member.Have formation like this, just UV sensor can be arranged on each position in the outside, the 2nd chamber, compare, can improve the configuration degree of freedom of UV sensor with the situation that UV sensor is arranged in the 2nd chamber.In addition,, compare, can easily maintain and manage UV sensor with the situation that UV sensor is arranged in the 2nd chamber owing to the outside that UV sensor is arranged on the 2nd chamber.
In above-mentioned ultraviolet lamp, being preferably described ultraviolet source is set at inside and possesses the 3rd chamber of taking in described irradiation object thing, established part in the wall portion that constitutes described the 3rd chamber is provided with peristome, and be provided with by seeing through member through the 3rd ultraviolet ray that ultraviolet material constitutes to cover this peristome, described UV sensor is set at the outside in described the 3rd chamber and accepts to see through through described the 3rd ultraviolet ray the ultraviolet ray of member.Have formation like this, just UV sensor can be arranged on each position in the outside, the 3rd chamber, compare, can improve the configuration degree of freedom of UV sensor with the situation that UV sensor is arranged in the 3rd chamber.In addition,, compare, can easily maintain and manage UV sensor with the situation that UV sensor is arranged in the 3rd chamber owing to the outside that UV sensor is arranged on the 3rd chamber.
In above-mentioned ultraviolet lamp, be preferably a plurality of described ultraviolet sources are set, possesses the angle adjusting mechanism that described UV sensor is changed with respect to the arrangement angles of described ultraviolet source, by described angle adjusting mechanism the arrangement angles of described UV sensor is changed, simultaneously the uitraviolet intensity of a plurality of ultraviolet source irradiations is measured.If so the arrangement angles of UV sensor is changed by angle adjusting mechanism, simultaneously the uitraviolet intensity of a plurality of ultraviolet sources irradiation is measured, the UV sensor of quantity that then can be by being less than ultraviolet source is measured the uitraviolet intensity of a plurality of ultraviolet sources irradiations.Thus, even be provided with under the situation of a plurality of ultraviolet sources, also can suppress because of monitoring the increase that causes UV sensor quantity to the uitraviolet intensity that a plurality of ultraviolet sources send.
As mentioned above, ultraviolet mornitoring system of the present invention and ultraviolet lamp can be for a long time, exactly high-intensity ultraviolet ray is monitored.
Description of drawings
Fig. 1 is ultraviolet mornitoring system in the expression exemplary embodiment of the present invention and the formation sketch plan that is assembled with the ultraviolet lamp of this system.
Fig. 2 is the side view of the concrete formation of the expression UV sensor that adopts ultraviolet mornitoring system shown in Figure 1.
Fig. 3 is the ultraviolet mornitoring system of expression the 1st embodiment of the present invention and the formation sketch plan that is assembled with the ultraviolet lamp of this system.
Fig. 4 is the ultraviolet mornitoring system of expression the 2nd embodiment of the present invention and the formation sketch plan that is assembled with the ultraviolet lamp of this system.
Fig. 5 is the ultraviolet mornitoring system of expression the 3rd embodiment of the present invention and the formation sketch plan that is assembled with the ultraviolet lamp of this system.
Fig. 6 is illustrated in the ultraviolet mornitoring system of the 3rd embodiment shown in Figure 5, UV sensor angle is set and the surface electrode of the UV sensor of being shone by ultraviolet ray of flowing through between electric current (electric signal) concern correlogram.
Symbol description
1 the 1st chamber
The 1a peristome
2 the 2nd chambeies
The 2a peristome
3,43 next doors
4,44,74,94 ultraviolet monitoring devices
11,51 supply units
12 ultraviolet sources
13,53,83a, 83b, 93a, 93b, 93c, 93d UV sensor
14,54 control parts
15 cooling devices (temperature control device)
16,86a, 86b vacuum seal portion (cover portion)
17,87a, 87b ultraviolet ray incident section
18,88a, 88b shutter mechanism
19 ultraviolet rays see through member (the 1st ultraviolet ray sees through member)
20 ultraviolet rays see through member (the 2nd ultraviolet ray sees through member)
22 diamond layers (test section)
31,61 amplifier circuits
32,62 arithmetic units
33,63 control signal input circuits
52 Cooper-Hewitt lamps (ultraviolet source)
65 adjustment sleeve pipe (temperature control device)
82,92 xenon excimer lamp (ultraviolet source)
93e, 93f angle adjusting mechanism
95 process chambers (the 3rd chamber)
96a, 96b, 96c, 96d peristome
98a, 98b, 98c, 98d ultraviolet ray see through member (the 3rd ultraviolet ray sees through member)
100 irradiation object things
200 glass plates (irradiation object thing)
300 glass substrates (irradiation object thing)
400 semiconductor wafers (irradiation object thing)
Embodiment
At first, with reference to the accompanying drawings the main composition in the embodiments of the present invention is described.
Fig. 1 represents the ultraviolet mornitoring system 4 in the exemplary embodiment of the present invention and is assembled with the formation of the ultraviolet lamp of this system.
In the ultraviolet lamp of present embodiment, possess the 1, the 2nd chamber 2, the 1st chamber, next door 3 and ultraviolet mornitoring system 4.Be provided with ultraviolet source 12 described later in the 1st chamber, its inside is retained as vacuum.The 2nd chamber 2 and the 1st chamber 1 are provided with continuously.The irradiation object thing 100 of the after-applied predetermined processing of illuminated ultraviolet ray is taken in the 2nd chamber 2.The material that next door 3 can be seen through by ultraviolet rays such as synthetic quartzs constitutes, owing to be arranged between the 1st chamber 1 and the 2nd chamber 2, thereby the space in space in the 1st chamber 1 and the 2nd chamber 2 is separated.And, seen through on the irradiation object thing 100 that shines behind the next door 3 in the 2nd chamber 2 by the ultraviolet ray of ultraviolet source described later 12 outputs in the 1st chamber 1.In addition, such next door 3 might not be leaveed no choice but be provided with, also ultraviolet source 12 and irradiation object thing 100 both sides can be in single cavity, taken in continuous inner space.
Above-mentioned supply unit 11 is used for to ultraviolet source 12 supply electric power.In addition, ultraviolet source 12 is made of xenon excimer lamp or Cooper-Hewitt lamp etc., receives behind the electric power of supply unit 11 supplies, and ultraviolet source 12 irradiates about 1mW/cm
2~about 100mW/cm
2About ultraviolet ray.This ultraviolet source 12 is arranged in parallel with respect to above-mentioned irradiation object 100 by a plurality of with the predetermined distance configuration.
The ultraviolet intensity of 13 pairs of ultraviolet sources of UV sensor, 12 irradiations is measured.This UV sensor 13 constitutes the ultraviolet intensity that receives at from ultraviolet source 12, exports corresponding electric signal.Fig. 2 represents the concrete formation of UV sensor 13.UV sensor 13 has substrate 21, be formed on the substrate 21 and play ultraviolet test section effect diamond layer 22, be formed on a pair of surface electrode 23a and 23b and metal support 24 on the diamond layer 22.
And UV sensor 13 is worked under the principle that is called as the light conduction type.Specifically, in UV sensor 13,, on diamond layer 22, generate electronics and positive hole because ultraviolet ray is injected on the diamond layer 22 by the field between surface electrode 23a and the 23b.At this moment, in diamond layer 22, produce the electric charge (electronics and positive hole) of the amount of the corresponding uitraviolet intensity of accepting.That is, the quantity of electric charge that generates when the uitraviolet intensity that is subjected to light is big increases, and the quantity of electric charge when the uitraviolet intensity that is subjected to light hour generation reduces on the contrary.Therefore, in UV sensor 13, when not shone by ultraviolet ray, the resistance of diamond layer 22 is very big, does not have electric current to pass through between surface electrode 23a and 23b, and is opposite, when by the ultraviolet ray irradiation, the resistance of diamond layer 22 reduces, and electric current is by between surface electrode 23a and the 23b and along with the increase of uitraviolet intensity, and the electric current of flowing through between surface electrode 23a and the 23b also increases thereupon.
And, by terminal 24a and 24b, wiring 26a and 26b, surface electrode 23a and 23b,, can collect the electric charge of above-mentioned generation to diamond layer 22 seal biasings.And the electric charge of collection outputs to control part 14 (with reference to figure 1) as electric signal from UV sensor 13.Because the above-mentioned quantity of electric charge that the intensity correspondence of the electric signal of this output generates in UV sensor 13, in other words, the size of the corresponding exactly electric current between above-mentioned surface electrode 23a and the 23b of flowing through, and proportional with above-mentioned irradiated ultraviolet intensity, therefore can judge ultraviolet irradiation intensity from the intensity of this electric signal.In addition, diamond layer 22 has favorable durability for ultraviolet ray.And, diamond layer 22 only to wavelength greatly the ultraviolet ray below 227nm have sensitivity, the light of the wavelength beyond the ultraviolet rays such as visible light, infrared ray is not had sensitivity.
Above-mentioned UV sensor 13 can be arranged on the interior all places of ultraviolet lamp.Wherein, position A~D shown in Figure 1 is for typically being provided with the position.
Position A is arranged on position in the 1st chamber 1 that is provided with ultraviolet source 12 with UV sensor 13.Because on the A of this position, can near ultraviolet source 12, directly measure, so be applicable to the real-time monitoring that when measuring uitraviolet intensity, improves repeatability and ultraviolet ray is carried out by 13 pairs of ultraviolet rays of UV sensor.Therefore, by UV sensor 13 is arranged on position A, have can be easily not lighting a lamp and the advantage of lowly determining of exposure intensity to ultraviolet source 12.
But on the A of this position, owing to can liftoff directly being subjected to of low coverage have about 1mW/cm
2~about 100mW/cm
2The situation that the temperature of UV sensor 13 rises can appear in the ultraviolet irradiation of intensity.When the temperature of UV sensor 13 surpasses the temperature range of regulation, can cause the measuring accuracy of UV sensor 13 to descend, at this moment, viewpoint from the measuring accuracy of keeping UV sensor 13, be preferably by cooling devices 15 (temperature control device) such as air cooling device, water cooling plant are set UV sensor 13 is cooled off, the temperature of UV sensor 13 is remained in the temperature range of afore mentioned rules.
Position B is arranged on position in the 2nd chamber 2 of taking in irradiation object thing 100 with UV sensor 13.This UV sensor 13 is being configured under the situation of this position B, because almost with shine object 100 on the identical ultraviolet ray of ultraviolet condition be injected on the UV sensor 13, so grasp the actual ultraviolet intensity that shines on the object 100 easily, the process that is suitable for when imposing predetermined process by ultraviolet ray irradiation and to irradiation object 100 manages.Moreover, on the B of this position, owing to, therefore can grasp the variation of the ultraviolet ray transmissivity in next door 3 to measuring through the ultraviolet rays that next door 3 is injected in the 2nd chamber 2 from ultraviolet source 12.That is, can be by on the B of position, uitraviolet intensity being measured, can grasp the deterioration in the next door 3 that causes because of the ultraviolet ray irradiation and see through the situations such as decline tendency of the ultraviolet ray transmissivity in next door 3.
In addition, have oxygen in the 2nd chamber 2, the part of oxygen changes and generates ozone when ultraviolet ray is shone.Therefore, when UV sensor 13 being arranged on position B and going up, UV sensor 13 is subjected to comprising the influence of the atmosphere of ozone.Specifically, when ozone directly contact with the surface of UV sensor 13, under the effect of the ozone of high response, the envenomation of UV sensor 13, the result might cause the sensitivity of UV sensor 13 that variation significantly takes place.Therefore, when UV sensor 13 is arranged on position B, in order to get rid of the influence of ozone, with vacuum seal portion 16 (cover portion) covering on every side to UV sensor 13.Enclosing in this vacuum seal portion 16 has argon gas, can prevent from because of the above-mentioned oxygen ozone that produces that changes UV sensor 13 to be impacted.And, on the part of vacuum seal portion 16, being provided with and seeing through ultraviolet ultraviolet incident section 17, ultraviolet ray is injected on the diamond layer 22 of UV sensor 13 by this ultraviolet ray incident section 17.
In addition, in the 2nd chamber 2, follow ultraviolet ray to shine on the object 100, can produce the material of regulation and disperse, this material can adhere to and be deposited on the surface of ultraviolet incident section 17 simultaneously.When these materials are deposited on the ultraviolet incident section 17, interdicted from the ultraviolet ray that UV sensor 13 is injected on the diamond layer 22, cause being difficult to uitraviolet intensity is measured exactly.Therefore, when UV sensor 13 being arranged on position B and going up, shutter mechanism 18 can be set, be used for reducing above-mentioned substance and adhere to and be deposited on the ultraviolet incident section 17.
Specifically, on the side in the face of the space in the 2nd chamber 2 of ultraviolet incident section 17, shutter mechanism 18 is set.And in the side in the face of the space in the 2nd chamber 2 of this ultraviolet ray incident section 17, shutter mechanism 18 constitutes and can switch between shielding status that ultraviolet incident section 17 is covered and the open state that ultraviolet incident section 17 is not covered.Promptly, when ultraviolet ray is measured, shutter mechanism 18 is not covered ultraviolet incident section 17, ultraviolet ray is injected on the diamond layer 22 of UV sensor 13 by this ultraviolet ray incident section 17, on the contrary, when not carrying out ultraviolet measurement, shutter mechanism 18 is covered ultraviolet incident section 17, adheres to and is deposited on the ultraviolet incident section 17 thereby suppress above-mentioned substance.
Position C sees through member 19 (the 2nd ultraviolet ray sees through member) through ultraviolet ray, the position on the outside in the 2nd chamber 2 that UV sensor 13 is arranged on, and this ultraviolet ray sees through member 19 and is made of the material that ultraviolet ray can see through.In this case, the ultraviolet ray of peristome 2a and this peristome of covering 2a is set through member 19 on the established part of the wall portion that constitutes the 2nd chamber 2.And the opposite side in the inside with the 2nd chamber 2 that sees through member 19 in this ultraviolet ray is provided with UV sensor 13, and ultraviolet ray sees through ultraviolet ray and accepted by UV sensor 13 through member 19.In addition, in this case, the position of UV sensor 13 be not limited to that ultraviolet ray sees through member 19 with the 2nd chamber 2 in the positions of opposite sides, the outside that also can be positioned at the 2nd chamber 2 can hard to bear light transmission ultraviolet ray sees through the ultraviolet position of member 19.For example, also can be positioned at the horizontal side that ultraviolet ray sees through member 19.
So, compare, UV sensor 13 is arranged on the configuration degree of freedom height of the UV sensor 13 under the situation in the outside in the 2nd chamber 2 with the situation in UV sensor 13 being arranged on the 2nd chamber 2.Therefore, be applicable to the situation that a plurality of UV sensor 13 is arranged on the position of expectation and each locational ultraviolet intensity distributions is grasped.For example, corresponding 12 of each ultraviolet sources are not provided with UV sensor 13, and the result of the uitraviolet intensity that these UV sensor 13 are monitored, feed back to behind the supply unit 11 of each ultraviolet source 12 supply electric power and control, can make the ultraviolet irradiation amount of each ultraviolet source 12 become even.
Position D sees through member 20 (the 1st ultraviolet ray sees through member) through ultraviolet ray, the position on the outside in the 1st chamber 1 that UV sensor 13 is arranged on, and this ultraviolet ray sees through member 20 and is made of the material that ultraviolet ray can see through.In this case, on the established part of the wall portion that constitutes the 1st chamber 1, peristome 1a is set and the ultraviolet ray that covers this peristome 1a is set and see through member 20.And, on this ultraviolet ray sees through member 20 and inside opposition side the 1st chamber 1, UV sensor 13 being set, ultraviolet ray sees through ultraviolet ray and sees through member 20 and accepted by UV sensor 13.In addition, in this case, the position of UV sensor 13 be not limited to that ultraviolet ray sees through member 20 with the 1st chamber 1 in the position of opposition side, the ultraviolet position that ultraviolet ray sees through member 19 can be accepted to see through in the outside that also can be positioned at the 1st chamber 1.For example, also can be positioned at the horizontal side that ultraviolet ray sees through member 20.So, under the situation in the outside that UV sensor 13 is arranged on the 1st chamber 1, identical with the situation that UV sensor 13 is arranged on above-mentioned position C, have the configuration degree of freedom that can improve UV sensor 13, and the advantage of easily UV sensor 13 being maintained and managing.
Above-mentioned control part 14 according to the electric signal of UV sensor 13 outputs, is controlled the electric power supply of supply unit 11, thus the ultraviolet ray output of control ultraviolet source 12.This control part 14 is made of amplifier circuit 31, arithmetic unit 32 and control signal output circuit 33.
When the electric signal from UV sensor 13 outputs was transfused to, 31 pairs of these electric signal of amplifier circuit amplified.And the electric signal that is exaggerated is input to the arithmetic unit 32 from amplifier circuit 31.Arithmetic unit 32 is converted into the ultraviolet ray amount with the electric signal of input.And the ultraviolet ray amount data by arithmetic unit 32 converses are imported into again in the control signal input circuit 33.Control signal input circuit 33 is input to power controlling signal in the supply unit 11, and the ultraviolet ray amount data of the corresponding input of this power controlling signal are adjusted electric power supply.
Specifically, control signal input circuit 33 determines the size of the ultraviolet ray amount of ultraviolet source 12 outputs according to the ultraviolet ray amount data from arithmetic unit 33 inputs, and will power controlling signal that should result of determination be input in the supply unit 11.For example, when control signal input circuit 33 from the ultraviolet ray of above-mentioned ultraviolet ray amount data judging ultraviolet source 12 outputs when setting output, the power controlling signal that reduces electric power supply is input in the supply unit 11, the electric power that is fed to ultraviolet source is reduced, thereby reduce the ultraviolet output quantity of ultraviolet source.On the contrary, when control signal input circuit 33 from the ultraviolet ray of above-mentioned ultraviolet ray amount data judging ultraviolet source 12 outputs when setting output, the power controlling signal of the supply that increases electric power is input in the supply unit 11, the electric power that is fed to ultraviolet source is reduced, thereby increase the ultraviolet output quantity of ultraviolet source.
Secondly, have an example that more specifically constitutes to of the present invention, promptly the 1st~the 3rd embodiment describes respectively.
(the 1st embodiment)
Fig. 3 represents the ultraviolet mornitoring system 44 of the 1st embodiment of the present invention and is assembled with the formation of the ultraviolet lamp of this system.
The ultraviolet lamp of the 1st embodiment is that ultraviolet ray is shone object is on the glass plate 200, and (batch) formula ultraviolet ray at the intermittence cleaning device that dry type is cleaned is carried out on its surface.This ultraviolet ray cleaning device possesses lamp box 41 (the 1st chamber), main part 42 (the 2nd chamber), next door 43 (the 3rd chamber), ultraviolet mornitoring system 44, carrying mechanism 45.
In addition, main part 42, next door 43 and ultraviolet mornitoring system 44 have identical formation with above-mentioned the 2nd chamber 2, next door 3 and ultraviolet mornitoring system 4 shown in Figure 1 respectively.And ultraviolet mornitoring system 44 has supply unit 51, ultraviolet source 52, UV sensor 53 and the control part 54 corresponding with above-mentioned supply unit 11 shown in Figure 1, ultraviolet source 12, UV sensor 13 and control part 14.But in the 1st embodiment, UV sensor 53 is located in the lamp box 41 by a plurality of, and is arranged on the position corresponding with each Cooper-Hewitt lamp 52.In addition, the structure of UV sensor 53 is identical with UV sensor shown in Figure 2 13, has the diamond layer 22 as test section.
In addition, in the 1st embodiment, air-cooled type or water-cooled adjustment sleeve pipe (temperature control device) is installed on UV sensor 53.This adjustment is corresponding with above-mentioned cooling device 15 shown in Figure 1 with sleeve pipe 65.Because UV sensor 53 is arranged in the lamp box 41, so low coverage is liftoff directly is subjected to ultraviolet ray and the visible light radiation that Cooper-Hewitt lamp 52 sends, thereby by these ultraviolet rays and visible light heating.And when the temperature of UV sensor 53 rises to approximately more than 75 ℃ the time, the electric signal of output changes, and causes measuring accurately ultraviolet intensity.Therefore, in the 1st embodiment, adjustment is installed on UV sensor 53 cools off with 65 pairs of UV sensor 53 of sleeve pipe, temperature can be remained on about below 75 ℃, thereby keep measuring accuracy to uitraviolet intensity.
In addition, control part 54 constitutes by having the amplifier circuit 61, arithmetic unit 62 and the control signal input circuit 63 that constitute equally with above-mentioned amplifier circuit 31, arithmetic unit 32 and control signal input circuit 33 shown in Figure 1.
In the 1st embodiment, because from Cooper-Hewitt lamp 52 irradiation 3mW/cm
2Ultraviolet ray, flow through the electric current of 300nA between the surface electrode 23a of UV sensor 53 and the 23b (with reference to figure 2), and the electric signal suitable with this electric current be input to control part 54 from UV sensor 53.In control part 54, identical based on this electric signal with above-mentioned example shown in Figure 1, can ultraviolet intensity be monitored in real time, and the ultraviolet ray output of the electric power supply of control supply unit 51 and Cooper-Hewitt lamp 52.
Carrying mechanism 45 is made of with fork 46 and maintenance platform 47 carrying.Carrying be used for being transported to glass plate 200 in the main part 42 with fork 46 and with its mounting to maintenance platform 47.The glass plate 200 that keeps 47 pairs of platforms to be handled upside down with fork 46 mountings keeps, and has the function that makes glass plate 200 close Cooper-Hewitt lamps 52 after Cooper-Hewitt lamp 52 1 side shiftings.Specifically, by carrying with fork 46 with glass plate 200 mountings after keep on the platform 47, keep platform 47 to be moved upward and make glass plate 200 near position under the lamp box 41 (distance between the following aspect in the surface of glass plate 200 and next door 43 is about the position of 20mm).Afterwards, by opening Cooper-Hewitt lamp 52 to glass plate 200 irradiation ultraviolet radiations.
Under the resultant effect of the chemical action of irradiated action of ultraviolet ray and the ozone that produced by the oxygen in the main part 42, the surface of above-mentioned glass plate 200 is cleaned by dry type.Cooper-Hewitt lamp 52 was closed after the ultraviolet ray irradiation was finished.And, keep platform 47 to move downwards, and glass plate 200 is shifted into carrying is transported to the outside after pitching 46.Secondly, be transported in the main part 42 with fork 46 glass plates 200, carry out technology same as described above then repeatedly other by carrying.
As mentioned above, in the 1st embodiment, UV sensor 53 has the diamond layer 22 as test section.Because 22 pairs of ultraviolet rays of this diamond layer have favorable durability, so, also can suppress the deterioration of UV sensor 53 even under the high-intensity ultraviolet situation of long-time irradiation.Therefore, can monitor high-intensity ultraviolet ray for a long time.Moreover, in the 1st embodiment, owing to can use UV sensor 53 with diamond layer 22, directly the uitraviolet intensity of Cooper-Hewitt lamp 52 irradiations is measured, so with compare by the situation of uitraviolet intensity being monitored by the concentration of ozone that irradiation ultraviolet radiation produced, unstable chemcial property, can monitor ultraviolet intensity exactly.Therefore, in the 1st embodiment, can be for a long time, exactly high-intensity ultraviolet ray is monitored, and the electric signal that can produce based on diamond layer 22 by UV sensor 53, for a long time, exactly the ultraviolet ray output of Cooper-Hewitt lamp 52 is controlled.
In addition, in the 1st embodiment, the diamond layer 22 of UV sensor 53 only has sensitivity to ultraviolet ray, and the light of wavelength beyond the ultraviolet rays such as visible light, infrared ray is not had sensitivity.Thus, also can not be provided for getting rid of the light damping plate of influences such as visible light, infrared ray or the slit (aperture) that light quantity is regulated, therefore can reduce the quantity of parts.
In addition, in the 1st embodiment, because UV sensor 53 is arranged in the lamp box 41, therefore can pass through UV sensor 53, low coverage is liftoff directly to be measured being located at the ultraviolet ray that lamp box 41 interior Cooper-Hewitt lamps 52 send.Thus, can monitor in real time the ultraviolet ray of Cooper-Hewitt lamp 52 irradiations.So can find immediately that Cooper-Hewitt lamp 52 is not lit a lamp or the exposure intensity of Cooper-Hewitt lamp 52 under the degradation situation.
In addition, in the 1st embodiment, owing to be provided with the adjustment sleeve pipe 65 that the temperature of UV sensor 53 is controlled, even because of UV sensor 53 causes temperature to rise at the direct irradiation that closely is subjected to ultraviolet ray and visible light, also can with sleeve pipe 65 temperature of UV sensor 53 be controlled in the scope of the measuring accuracy that can keep uitraviolet intensity (about below 75 ℃) by adjustment.So, can suppress the decline of the measuring accuracy of UV sensor 53.
(the 2nd embodiment)
Fig. 4 represents the ultraviolet mornitoring system 74 of the 2nd embodiment of the present invention and is assembled with the formation of the ultraviolet lamp of this system.
The ultraviolet lamp of the 2nd embodiment is ultraviolet step optical cvd (ChemicalVapor Deposition) device that forms organic luminous layer of surface irradiation by being glass substrate 300 to the irradiation object thing.This optical cvd device possesses lamp box 41 (the 1st chamber), main chamber 72 (the 2nd chamber), next door 43, ultraviolet mornitoring system 74.
In addition, in the optical cvd device of the 2nd embodiment, in main chamber 72, keep glass substrate 300 and be provided with the well heater platform 77 that the temperature of glass substrate 300 is controlled.And, in lamp box 41, be provided as 4 xenon excimer lamp 82 of ultraviolet source.In addition, main chamber 72 has gives prominence to vacuum port 72a that is provided with and the incorporating section 72b that is provided with to its side extension above it, these spaces of taking in the glass substrate 300 in main chamber 72 constitute the space that is connected with interior space and the interior space of incorporating section 72b of vacuum port 72a.And, in the initial period of CVD technology, oxygen is got rid of by in main chamber 72, being full of nitrogen., unstrpped gas charged into the ultraviolet ray of main chamber 72 in also by xenon excimer lamp 82 shining, steaming on the surface of glass substrate 300 after unstrpped gas is decomposed, form organic luminous layer or its diaphragm thereafter.
And, different with the ultraviolet cleaning device of above-mentioned the 1st embodiment in the optical cvd device of the 2nd embodiment, in main chamber 72, be provided with two UV sensor 83a, 83b.Specifically, exactly a UV sensor 83a is arranged in the above-mentioned vacuum port 72a, and with another UV sensor 83b to be installed in the state setting on the moving conduit (motion fitthrough) 90 in the above-mentioned incorporating section 72b.
Moving conduit 90 is set to extend along the length direction of incorporating section 72b.And, in this moving conduit 90, the magnetic portion (not shown) with magnetic is set on its established part, act on this magnetic portion by making magnet from the outside of incorporating section 72b, its length direction to incorporating section 72b (left and right directions of Fig. 4) is moved.By the action of this moving conduit 90, the left and right directions of UV sensor 83b in Fig. 4 moved.
In addition, in this optical cvd device, above-mentioned 4 xenon excimer lamp 82 assortments are on the left and right directions of Fig. 4.Therefore, UV sensor 83b is by moving at left and right directions like that to above-mentioned, can ultraviolet intensity be measured on the optional position of the assortment direction of xenon excimer lamp 82.Thus, can be by the distribution situation of UV sensor 83b grasp along the uitraviolet intensity of the assortment direction of xenon excimer lamp 82.And, when cutting apart a plurality of organic light emitting display of taking-up from one glass substrate 300, send out generation rate by the uitraviolet intensity distribution of contrast UV sensor 83b grasp and the bad product of organic light emitting display, can find out the best ultraviolet irradiation amount scope that reduces bad product generation rate.
In addition, when the 86a of vacuum seal portion (cover portion) on every side that covers UV sensor 83a is set, on the part of the 86a of this vacuum seal portion, is provided with and sees through ultraviolet ultraviolet incident section 87a.On the other hand, on UV sensor 83b, be provided with too and cover its 86b of vacuum seal portion (cover portion) on every side, and on the part of the 86b of this vacuum seal portion, be provided with through ultraviolet ultraviolet incident section 87b.And, enclosed argon gas respectively in the inside of 86a of vacuum seal portion and 86b.In addition, ultraviolet ray is injected on the diamond layer 22 of UV sensor 83a by ultraviolet incident section 87a, and is injected into by ultraviolet incident section 87b on the diamond layer 22 of UV sensor 83b.
In addition, in the optical cvd device, the material of following CVD technology to disperse can steam, be deposited on the inwall in main chamber 72 etc.And, UV sensor 83a, 83b are arranged on main chamber 72 (vacuum port 72a, incorporating section 72b) when interior, and these materials that disperse also may adhere to, be deposited on the ultraviolet incident section 87b of the ultraviolet incident section 87a of UV sensor 83a and UV sensor 83b.In this case, because this deposit can reflect or absorb the ultraviolet ray on the diamond layer 22 of the diamond layer 22 that should be injected into UV sensor 83a and UV sensor 83b, so can cause ultraviolet measurement result generation error.Therefore, in the 2nd embodiment, be provided for covering the shutter mechanism 88a of the ultraviolet incident section 87a of UV sensor 83a, and the shutter mechanism 88b of the inlet that opens and closes the incorporating section 72b that takes in UV sensor 83b is set.
The above-mentioned formation in addition of the optical cvd device of the 2nd embodiment is identical with the ultraviolet cleaning device of above-mentioned the 1st embodiment.
In the optical cvd device of the 2nd embodiment of above explanation, can obtain the effect identical with the ultraviolet cleaning device of above-mentioned the 1st embodiment, for example, can be for a long time, exactly high-intensity ultraviolet ray is monitored and controlled.
Moreover, in the 2nd embodiment, because UV sensor 83a, 83b are arranged in the main chamber 72 (vacuum port 72a, incorporating section 72b), therefore can pass through UV sensor 83a and 83b, near being arranged on the position of the glass substrate 300 in the main chamber 72, the actual uitraviolet intensity that shines on the glass substrate 300 is carried out high-precision monitoring.And, on the data basis of the uitraviolet intensity that monitoring is obtained, can control the actual uitraviolet intensity that shines on the glass substrate 300 accurately.
In addition, in the 2nd embodiment, because a side in the space in the main chamber 72 of the ultraviolet incident section 87a of UV sensor 83a is provided with shutter mechanism 88a, when not measuring ultraviolet ray, if cover a side in the space in the main chamber 72 of ultraviolet incident section 87a by shutter mechanism 88a, compare with the situation that such shutter mechanism 88a is not set, can be suppressed at the materials that produce in the main chamber 72 or disperse and adhere to and be deposited on the ultraviolet incident section 87a.Thus, can suppress adhering to and piling up and hinder ultraviolet ray to be injected into the decline of the ultraviolet measurement precision that causes on the diamond layer 22 of UV sensor 83a because of these materials that disperse.In addition, in the 2nd embodiment, identical with the situation of above-mentioned UV sensor 83a, can suppress to adhere to and be deposited in the decline that causes the ultraviolet measurement precision of UV sensor 83b on the ultraviolet incident section 87b by shutter mechanism 88b because of the material that disperses.
(the 3rd embodiment)
Fig. 5 represents the ultraviolet mornitoring system 94 of the 3rd embodiment of the present invention and is assembled with the formation of the ultraviolet lamp of this system.
The ultraviolet lamp of the 3rd embodiment is the step ultraviolet cleaning device with above-mentioned the 1st embodiment different modes.The ultraviolet lamp of the 3rd embodiment is that ultraviolet ray is shone object is on the semiconductor wafer 400, with the silicon dioxide sulfuration on semiconductor wafer 400 surfaces, that is, removes the impurity in the silicon dioxide.And this ultraviolet ray cleaning device possesses process chamber 95 (the 3rd chamber) and ultraviolet mornitoring system 94.
Different with above-mentioned the 1st embodiment, process chamber 95 is the one-piece type chambeies that do not have the next door 3 (with reference to figure 3) of separating the space in the process chamber 95.In addition, in the inside of process chamber 95, be provided with 6 xenon excimer lamp 92 and well heater platform 97 as ultraviolet source.Well heater platform 97 remains the state relative with xenon excimer lamp 92 with semiconductor wafer 400.The well heater (not shown) that the temperature of semiconductor wafer 400 is controlled is installed on this well heater platform 97.In the 3rd embodiment, by semiconductor wafer 400 is remained on the well heater platform 97, can will be arranged in the same process chamber 95 as the semiconductor wafer 400 of irradiation object thing with as the xenon excimer lamp 92 of ultraviolet source.
And, in this ultraviolet ray cleaning device, be accommodated in semiconductor wafer 400 in the process chamber 95 after, to carrying out vacuum exhaust in the process chamber 95.By open xenon excimer lamp 92 begin semiconductor wafer 400 carried out slaking thereafter.At this moment, under the action of ultraviolet ray that the heat and the xenon excimer lamp 92 of 97 supplies of well heater platform are shone, the impurity in the silicon dioxide on semiconductor wafer 400 surfaces is removed.
In addition, different with the ultraviolet cleaning device of above-mentioned the 1st embodiment in the ultraviolet cleaning device of the 3rd embodiment, UV sensor 93a~93d is set at the outside of process chamber 95.
Specifically, the wall portion at the upside of process chamber 95 is provided with two peristome 96a, 96b.And, be provided with by the ultraviolet ray that constitutes through ultraviolet synthetic sapphire and see through member 98a (the 3rd ultraviolet ray sees through member) to cover peristome 96a.And, UV sensor 93a be arranged on that ultraviolet ray sees through member 98a with process chamber 95 on the faces of opposite sides.In addition, same with above-mentioned ultraviolet ray through member 98a, ultraviolet ray is set sees through member 98b (the 3rd ultraviolet ray sees through member) and cover another peristome 96b, and UV sensor 93b is arranged on that this ultraviolet ray sees through member 98b with process chamber 95 on the faces of opposite sides.In addition, the formation that UV sensor 93a and 93b are related is identical with the formation of the UV sensor 13 (position D) of 1 outside, above-mentioned the 1st chamber shown in Figure 1.
In addition, be provided with peristome 96c on distolateral and on another of this wall portion is distolateral, be provided with peristome 96d in one of the A lower side wall portion of process chamber 95.And, ultraviolet ray is set sees through member 98c covering the peristome 96c of an end, and ultraviolet ray is set sees through member 98d to cover the peristome 96d of the other end.The formation that these ultraviolet rays see through member 98c and 98d is identical through member 98b with above-mentioned ultraviolet ray.And, the ultraviolet ray that UV sensor 93c is arranged on a side see through member 98c with process chamber 95 on the opposite sides, and the UV sensor 93d ultraviolet ray that is arranged on the opposing party see through member 98d with process chamber 95 on the opposite sides.
In addition, in UV sensor 93c, additional setting makes the angle adjusting mechanism 93e with respect to the arrangement angles variation of the UV sensor 93c of xenon excimer lamp 92, and in UV sensor 93d, additional setting makes the angle adjusting mechanism 93f with respect to the arrangement angles variation of the UV sensor 93d of xenon excimer lamp 92.And, by this angle adjusting mechanism 93e the arrangement angles of UV sensor 93c is changed, and the arrangement angles of UV sensor 93d is changed by angle adjusting mechanism 93f, in UV sensor 93c and 93d, the uitraviolet intensity of 6 xenon excimer lamp, 92 irradiations is measured simultaneously.When Fig. 6 represents with these UV sensor 93c and 93d uitraviolet intensity have been carried out measurement, UV sensor 93c and 93d angle is set and the surface electrode 23a of flow through UV sensor 93c, 93d and 23b (with reference to figure 2) between electric current (electric signal) concern example.
In addition, the formation beyond the ultraviolet cleaning device of the 3rd embodiment above-mentioned is identical with the formation of the ultraviolet cleaning device of above-mentioned the 1st embodiment.
Secondly, use the ultraviolet cleaning device of the 3rd embodiment, actually carried out ultraviolet irradiation cleaning treatment.At this moment, till carrying out vacuum exhaust and dropping to the pressure in the process chamber 95 below 0.1 Pascal, make the specified 30mW/cm of being output as then
2The xenon excimer lamp irradiation ultraviolet radiation.Thus, between the surface electrode 23a of UV sensor 93a~93d and 23b (with reference to figure 2), flow through the electric current of 50nA~200nA respectively, and the electric signal that is equivalent to this electric current is outputed to control part 54 from UV sensor 93c~93d.And, in control part 54, often monitored based on the ultraviolet intensity of this electric signal.So, can be to lighting a lamp of xenon excimer lamp 92 bad or exceed with state such as deficiency with respect to the exposure of setting exposure and often to monitor, and can detect these states in real time.In addition, above-mentioned UV sensor 93a~93d has to need not to reset and sets and the characteristic of simulated determination, make full use of this characteristic, can control in real time with the electric power supply of 94 pairs of supply units 51 of ultraviolet mornitoring system, and control xenon excimer lamp 92, make it irradiate the ultraviolet ray amount of regulation.
In the 1st embodiment, by shining 3mW/cm from Cooper-Hewitt lamp 52
2Ultraviolet ray, the electric current of 300nA of between the surface electrode 23a of UV sensor 53 and 23b (with reference to figure 2), flowing through, and the electric signal that is equivalent to this electric current is outputed to control part 54 from UV sensor 53.In control part 54, identical with above-mentioned embodiment shown in Figure 1, can ultraviolet intensity be monitored in real time based on this electric signal, thereby and to the ultraviolet ray output of the electric power supply of supply unit 51 control Cooper-Hewitt lamp 52.
In the 3rd embodiment of above explanation, be provided with ultraviolet ray and see through member 98a~98d and be used for covering the peristome 96a~96d that is located in the wall portion that constitutes process chamber 95, UV sensor 93a~93d be arranged on that ultraviolet ray sees through member 98a~98d with process chamber 95 on the opposite sides.Therefore, UV sensor 93a~93d can be arranged on all places in process chamber 95 outsides, compare, can improve the degree of freedom that is provided with of UV sensor 93a~93d with the situation in UV sensor 93a~93d being arranged on process chamber 95.
In addition, in the 3rd embodiment, because UV sensor 93a~93d is set at the outside of process chamber 95, compare with the situation in UV sensor 93a~93d is set at process chamber 95, can easily maintain and manage UV sensor 93a~93d.
In addition, in the 3rd embodiment, owing to the arrangement angles of UV sensor 93c (93d) is changed by angle adjusting mechanism 93e (93f), simultaneously the uitraviolet intensity of 6 xenon excimer lamp, 92 irradiations is measured, so can use the UV sensor 93c (93d) that lacks than xenon excimer lamp 92 quantity that the uitraviolet intensity of 6 xenon excimer lamp, 92 irradiations is measured.Thus, can suppress the increase UV sensor 93c (93d) quantity carried out for the uitraviolet intensity of monitoring 6 xenon excimer lamp 92 irradiation.
Effect beyond the ultraviolet cleaning device of the 3rd embodiment above-mentioned is identical with the effect of the ultraviolet cleaning device of above-mentioned the 1st embodiment.
In addition, this disclosed embodiment should may be thought of as all points and all only be example, but not its content is limited.Scope of the present invention is not limited to explanation that above-mentioned embodiment is carried out, only limits to the model of claim. the content shown in enclosing, and have impartial implication with all changed contents in the scope with the scope of claim.
Claims (12)
1. ultraviolet mornitoring system is characterized in that having:
The supply unit of supply electric power;
By obtaining electric power and the ultraviolet source of irradiation ultraviolet radiation from described supply unit;
UV sensor, it has the test section that is made of adamas that generates the electric charge of respective amount according to the ultraviolet intensity of accepting, and according to the electric charge that is generated by this test section, exports the electric signal corresponding with described uitraviolet intensity;
Control part, it controls the electric power supply of described supply unit based on described electric signal, thereby controls the ultraviolet ray output of described ultraviolet source.
2. ultraviolet mornitoring system according to claim 1 is characterized in that, described control part comprises:
The amplifier circuit that described electric signal is amplified;
To be converted into the arithmetic unit of ultraviolet ray amount by the electric signal that described amplifier circuit amplifies;
The control signal input circuit, it receives the ultraviolet ray amount data from described arithmetic unit, and according to these ultraviolet ray amount data, is used to adjust the power controlling signal of the electric power supply of described supply unit to described supply unit input.
3. ultraviolet lamp, it possesses claim 1 or 2 described ultraviolet mornitoring systems, it is characterized in that,
From described ultraviolet source to irradiation object thing irradiation ultraviolet radiation.
4. ultraviolet lamp according to claim 3 is characterized in that possessing:
Take in the 1st chamber of described ultraviolet source;
The 2nd chamber that is provided with and takes in described irradiation object thing continuously with described the 1st chamber;
Separate space in described the 1st chamber and the space in described the 2nd chamber, and by seeing through the next door that ultraviolet material constitutes,
The ultraviolet ray of the ultraviolet source irradiation in described the 1st chamber sees through described next door and shines on the irradiation object thing in described the 2nd chamber.
5. ultraviolet lamp according to claim 4 is characterized in that, described UV sensor is arranged in described the 1st chamber.
6. ultraviolet lamp according to claim 5 is characterized in that, possesses the temperature control device of the temperature of the described UV sensor of control.
7. ultraviolet lamp according to claim 4 is characterized in that, is provided with peristome at the established part of the wall portion that constitutes described the 1st chamber, and is provided with by seeing through the 1st ultraviolet ray that ultraviolet material constitutes and sees through member covering this peristome,
Described UV sensor is arranged on the outside in described the 1st chamber and accepts to see through the ultraviolet ray that described the 1st ultraviolet ray sees through member.
8. ultraviolet lamp according to claim 4 is characterized in that, described UV sensor is arranged in described the 2nd chamber.
9. ultraviolet lamp according to claim 8 is characterized in that, is provided with the cover portion on every side that covers described UV sensor, and is provided with on the part of this cover portion through ultraviolet ultraviolet incident section,
And the side towards described the 2nd cavity space in described ultraviolet incident section also has shutter mechanism, and this shutter mechanism can switch to shielding status that covers described ultraviolet incident section and the open state that does not cover described ultraviolet incident section.
10. ultraviolet lamp according to claim 4 is characterized in that, is provided with peristome at the established part of the wall portion that constitutes described the 2nd chamber, and is provided with by seeing through the 2nd ultraviolet ray that ultraviolet material constitutes and sees through member covering this peristome,
Described UV sensor is arranged on the outside in described the 2nd chamber and accepts to see through the ultraviolet ray that described the 2nd ultraviolet ray sees through member.
11. ultraviolet lamp according to claim 3 is characterized in that, has the 3rd chamber that is provided with described ultraviolet source and takes in described irradiation object thing in inside,
Established part in the wall portion that constitutes described the 3rd chamber is provided with peristome, and is provided with by seeing through the 3rd ultraviolet ray that ultraviolet material constitutes and sees through member covering this peristome,
Described UV sensor is arranged on the outside in described the 3rd chamber and accepts to see through the ultraviolet ray that described the 3rd ultraviolet ray sees through member.
12. ultraviolet lamp according to claim 3 is characterized in that, is provided with a plurality of described ultraviolet sources,
Has the angle adjusting mechanism that described UV sensor is changed with respect to the arrangement angles of described ultraviolet source, by described angle adjusting mechanism the arrangement angles of described UV sensor is changed, measure simultaneously from the uitraviolet intensity of described a plurality of ultraviolet source irradiations.
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JP2006181794A JP2008008848A (en) | 2006-06-30 | 2006-06-30 | Ultraviolet radiation monitoring system and ultraviolet irradiation device |
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JP (1) | JP2008008848A (en) |
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Cited By (5)
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---|---|---|---|---|
CN102243100A (en) * | 2011-04-20 | 2011-11-16 | 东南大学 | Detector and detection method for ultraviolet irradiation dose |
CN102901561A (en) * | 2011-07-25 | 2013-01-30 | 台湾积体电路制造股份有限公司 | Dynamic, real time ultraviolet radiation intensity monitor |
CN106796903A (en) * | 2014-10-14 | 2017-05-31 | 科磊股份有限公司 | For the radiation along manufacturing process line measurement chip and the method and system of temperature exposure |
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JP3964863B2 (en) * | 2003-12-22 | 2007-08-22 | 株式会社キーエンス | UV irradiation equipment |
-
2006
- 2006-06-30 JP JP2006181794A patent/JP2008008848A/en active Pending
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2007
- 2007-04-04 TW TW096112111A patent/TW200803975A/en unknown
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CN102901561A (en) * | 2011-07-25 | 2013-01-30 | 台湾积体电路制造股份有限公司 | Dynamic, real time ultraviolet radiation intensity monitor |
CN106796903A (en) * | 2014-10-14 | 2017-05-31 | 科磊股份有限公司 | For the radiation along manufacturing process line measurement chip and the method and system of temperature exposure |
CN108168693A (en) * | 2018-01-16 | 2018-06-15 | 汕头东风印刷股份有限公司 | A kind of UV energy testing apparatus |
CN110160645A (en) * | 2019-05-13 | 2019-08-23 | 郑州大学 | A kind of ultraviolet detection prior-warning device based on diamond |
Also Published As
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KR100868162B1 (en) | 2008-11-12 |
TW200803975A (en) | 2008-01-16 |
JP2008008848A (en) | 2008-01-17 |
KR20080003210A (en) | 2008-01-07 |
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