CN101096618A - Diode cleaning fluid - Google Patents
Diode cleaning fluid Download PDFInfo
- Publication number
- CN101096618A CN101096618A CNA200610014599XA CN200610014599A CN101096618A CN 101096618 A CN101096618 A CN 101096618A CN A200610014599X A CNA200610014599X A CN A200610014599XA CN 200610014599 A CN200610014599 A CN 200610014599A CN 101096618 A CN101096618 A CN 101096618A
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- Prior art keywords
- diode
- out system
- clean
- nonionogenic tenside
- phosphoric acid
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Abstract
The invention discloses a diode abluent, which comprises the following parts: 10-25% phosphate, 5-10% inorganic base, 0.5-5% non-ionic surface active agent, 15-30% penetrant and 30-69.5% deionized water. The invention has excellent cleaning effect without combustion and explosion, which saves cost obviously.
Description
(1) technical field:
The present invention relates to a kind of transistor washing lotion, particularly a kind of diode chip for backlight unit scavenging solution
(2) background technology:
Diode is the basis of modern microelectronics industry development, as far back as last century diode fabrication technology just very ripe and be widely used in the every field of electron trade, along with developing rapidly of modern microelectronic industry, it is minimum that discrete device such as diode has become in the microelectronics enterprise profit, the industry that technology content is minimum, in order to guarantee certain profit, in the diode industry, use a large amount of harmful materials as the scavenging solution that cleans the diode surface, how under in order to be effective situation, to develop low-cost, free of contamination novel scavenging solution has just become instant requirement.
(3) summary of the invention:
The objective of the invention is to design a kind of diode cleaning fluid, it can accomplish low cost, pollution-free, and can improve product surface smooth finish, and is good to the wettability of irregularly shaped chip, and security simultaneously is good, meets environmental protection standard fully.
Technical scheme of the present invention: a kind of diode clean-out system, it is characterized in that forming by following component by weight percentage: phosphoric acid salt 10-25%, mineral alkali 5-10%, nonionogenic tenside 0.5~5%, permeate agent 15-30%, surplus composition are deionized water 30-69.5%.
Above-mentioned said phosphoric acid salt comprises tertiary sodium phosphate, potassiumphosphate, bisphosphate potassium or potassium primary phosphate.
Above-mentioned said mineral alkali comprises sodium hydroxide or potassium hydroxide.
Above-mentioned said nonionogenic tenside, polyoxyethylene nonylphenol ether, fatty alcohol-polyoxyethylene ether.
Above-mentioned said permeate agent comprises Sodium dodecylbenzene sulfonate or isopropyl benzene sodium sulfonate.
Well-beaten method made after the preparation method of above-mentioned said diode clean-out system adopted conventional mixing.
Principle of work of the present invention is: (1) phosphorus is active element, and the easy and various impurity generation chemical reactions in diode surface play the effect of cleaning the diode surface; (2) particle on diode surface, organism can be followed highly basic generation chemical reaction, alkaline adds makes particle, the easier removal of organism, and hydroxide radical is slowly discharged in solution, make corrosion more even, highly basic plays pH value regulating effect simultaneously, avoids the corrosion of sour environment to production unit; (3) nonionogenic tenside has following effects: 1. wetting, osmosis: make surface tension of liquid less, liquid is just sprawled at solid surface; 2. emulsification, dissemination: the hydrophilic group of tensio-active agent (emulsifying agent) molecule dissolves in water, and oleophilic group dissolves in oil, forms unimolecular layer, has improved the stability of emulsion; 3. foaming, froth breaking effect: when gas formed bubble, the oleophilic group of tensio-active agent stretched in the bubble, and unimolecular film has reduced surface tension, makes foam stabilization; 4. cleaning function: the cleaning function of nonionogenic tenside is wetting, infiltration, emulsification, dispersive synthesis result; 5. nonionogenic tenside is except reducing surface tension, thereby outside the essential propertys such as wetting, the infiltration that causes, dispersion, emulsification, foaming, washing, the performance that also has various derivations, for example antistatic property, stabilization, the level dyeing of fiber, softening, fungi-proofing arrangement etc.; (4) permeate agent has decontamination, moistening, foaming, disperses, reduces effect such as surface tension.
Superiority of the present invention and technique effect are: 1, diode cleaning fluid adopts phosphoric acid salt and mineral alkali to substitute oneself hazardous chemical such as rare of trichlorine in the existing clean-out system, and the easy and various impurity generation chemical reactions in diode surface play the effect of cleaning the diode surface; 2, since used water and various low toxicity reagent (if any phosphoric acid salt,, nonionogenic tenside, no base alkali, permeate agent), do not jeopardize workers ' health and also not flammable, do not explode, security is good; 3, job costs are low, and dilution is used, and expense is lower; 4, used permeate agent have that soil removability is strong, moistening comprehensively, good dispersity and reduce capillary multiple advantage, be nontoxic, harmless environmentfriendly products; 5, this scavenging solution has excellent cleaning effect to multiple pollution substance, and as diode chip for backlight unit remained on surface particle, residual oxide etc., and the people is that fingerprint impression of the hand of causing etc. can be removed; 6, this scavenging solution has multiple scavenging mechanism, except that dissolving, also comprises saponification, soaks into, effects such as emulsification, dispersion, interfacial activity power; 7, several components all are the common industrial products in the diode cleaning fluid that the present invention relates to, and wide material sources are easy to get, and the industrialization cost advantage is obvious.
By dilution in 1: 50, at ultrasonic machine ultrasonic 10 minutes, the metal ion of remained on surface, particle, organism etc. cleaned up, and diode itself is not influenced with above-mentioned diode scavenging solution and deionized water.
(4) embodiment:
Embodiment 1: get potassiumphosphate 15g in the phosphoric acid salt respectively, potassium hydroxide 10g in the mineral alkali, Sodium dodecylbenzene sulfonate 20g in the permeate agent, polyoxyethylene nonylphenol ether 3g in the nonionogenic tenside, deionized water 52g mixes the back and fully stirs, and obtains the diode clean-out system.
Embodiment 2: get bisphosphate potassium 15g in the phosphoric acid salt respectively, potassium hydroxide 10g in the mineral alkali, isopropyl benzene sodium sulfonate 25g in the permeate agent, polyoxyethylene nonylphenol ether 5g in the nonionogenic tenside, deionized water 45g mixes the back and fully stirs, and obtains the diode clean-out system.
Embodiment 3: get tertiary sodium phosphate 10g in the phosphoric acid salt respectively, potassium hydroxide 5g in the mineral alkali, isopropyl benzene sodium sulfonate 20 in the permeate agent, fatty alcohol-polyoxyethylene ether 5g in the nonionogenic tenside, deionized water 60g mixes the back and fully stirs, and obtains the diode clean-out system.
Claims (5)
1, a kind of diode clean-out system is characterized in that being made up of following component by weight percentage: phosphoric acid salt 10-25%, and mineral alkali 5-10%, nonionogenic tenside 0.5~5%, permeate agent 15-30%, surplus composition are deionized water 30-69.5%.
2, according to the said a kind of diode clean-out system of claim 1, it is characterized in that said phosphoric acid salt, comprise tertiary sodium phosphate, potassiumphosphate, bisphosphate potassium or potassium primary phosphate.
3, according to the said a kind of diode clean-out system of claim 1, it is characterized in that said mineral alkali, comprise sodium hydroxide or potassium hydroxide.
4, according to the said a kind of diode clean-out system of claim 1, it is characterized in that said nonionogenic tenside, polyoxyethylene nonylphenol ether, fatty alcohol-polyoxyethylene ether.
5, according to the said a kind of diode clean-out system of claim 1, it is characterized in that said permeate agent, comprise Sodium dodecylbenzene sulfonate or isopropyl benzene sodium sulfonate.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CNA200610014599XA CN101096618A (en) | 2006-06-30 | 2006-06-30 | Diode cleaning fluid |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CNA200610014599XA CN101096618A (en) | 2006-06-30 | 2006-06-30 | Diode cleaning fluid |
Publications (1)
Publication Number | Publication Date |
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CN101096618A true CN101096618A (en) | 2008-01-02 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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CNA200610014599XA Pending CN101096618A (en) | 2006-06-30 | 2006-06-30 | Diode cleaning fluid |
Country Status (1)
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CN (1) | CN101096618A (en) |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103943466A (en) * | 2014-05-16 | 2014-07-23 | 南通皋鑫电子股份有限公司 | Method for eliminating marks on surface of high voltage diode |
CN104450280A (en) * | 2014-11-17 | 2015-03-25 | 如皋市大昌电子有限公司 | Cleaning liquid special for diode semiconductor |
CN104450281A (en) * | 2014-11-17 | 2015-03-25 | 如皋市大昌电子有限公司 | Special cleaning solution for diode |
CN105695174A (en) * | 2016-03-16 | 2016-06-22 | 江苏双能太阳能有限公司 | Cleaning liquid special for prepared solar water heater |
CN106244349A (en) * | 2016-07-07 | 2016-12-21 | 如皋市大昌电子有限公司 | A kind of cleanout fluid being applicable to diode |
CN106847691A (en) * | 2016-12-11 | 2017-06-13 | 安徽兆利光电科技有限公司 | A kind of rectification diode cleaning method |
CN110129146A (en) * | 2019-05-23 | 2019-08-16 | 佑仁电子科技(苏州)有限公司 | A kind of liquid crystal display cleaning solution and cleaning method |
-
2006
- 2006-06-30 CN CNA200610014599XA patent/CN101096618A/en active Pending
Cited By (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103943466A (en) * | 2014-05-16 | 2014-07-23 | 南通皋鑫电子股份有限公司 | Method for eliminating marks on surface of high voltage diode |
CN103943466B (en) * | 2014-05-16 | 2017-02-01 | 南通皋鑫电子股份有限公司 | Method for eliminating marks on surface of high voltage diode |
CN104450280A (en) * | 2014-11-17 | 2015-03-25 | 如皋市大昌电子有限公司 | Cleaning liquid special for diode semiconductor |
CN104450281A (en) * | 2014-11-17 | 2015-03-25 | 如皋市大昌电子有限公司 | Special cleaning solution for diode |
CN104450280B (en) * | 2014-11-17 | 2017-06-06 | 如皋市大昌电子有限公司 | A kind of diode semiconductor special cleaning |
CN105695174A (en) * | 2016-03-16 | 2016-06-22 | 江苏双能太阳能有限公司 | Cleaning liquid special for prepared solar water heater |
CN106244349A (en) * | 2016-07-07 | 2016-12-21 | 如皋市大昌电子有限公司 | A kind of cleanout fluid being applicable to diode |
CN106847691A (en) * | 2016-12-11 | 2017-06-13 | 安徽兆利光电科技有限公司 | A kind of rectification diode cleaning method |
CN106847691B (en) * | 2016-12-11 | 2020-05-22 | 安徽兆利光电科技有限公司 | Method for cleaning rectifier diode |
CN110129146A (en) * | 2019-05-23 | 2019-08-16 | 佑仁电子科技(苏州)有限公司 | A kind of liquid crystal display cleaning solution and cleaning method |
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C02 | Deemed withdrawal of patent application after publication (patent law 2001) | ||
WD01 | Invention patent application deemed withdrawn after publication |