CN101095229A - Structured lead frame - Google Patents
Structured lead frame Download PDFInfo
- Publication number
- CN101095229A CN101095229A CNA2005800454709A CN200580045470A CN101095229A CN 101095229 A CN101095229 A CN 101095229A CN A2005800454709 A CNA2005800454709 A CN A2005800454709A CN 200580045470 A CN200580045470 A CN 200580045470A CN 101095229 A CN101095229 A CN 101095229A
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- Prior art keywords
- lead frame
- area
- present
- thickness
- structurized
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- 238000001746 injection moulding Methods 0.000 claims description 9
- 239000000463 material Substances 0.000 description 7
- 230000002349 favourable effect Effects 0.000 description 6
- 230000000694 effects Effects 0.000 description 4
- 229920003023 plastic Polymers 0.000 description 3
- 239000004033 plastic Substances 0.000 description 3
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000003672 processing method Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 238000003466 welding Methods 0.000 description 2
- 230000009471 action Effects 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 238000005266 casting Methods 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000003913 materials processing Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 238000007493 shaping process Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/495—Lead-frames or other flat leads
- H01L23/49503—Lead-frames or other flat leads characterised by the die pad
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/495—Lead-frames or other flat leads
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
- B81B7/0032—Packages or encapsulation
- B81B7/0045—Packages or encapsulation for reducing stress inside of the package structure
- B81B7/0048—Packages or encapsulation for reducing stress inside of the package structure between the MEMS die and the substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01068—Erbium [Er]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/14—Integrated circuits
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
Abstract
The invention relates to a lead frame (11, 31) for holding at least one electronic or micromechanical component (12). The invention is characterized in that the lead frame (11), in at least one first area (21), has a thickness less than that in another area (23).
Description
Background technology
The present invention is based on a kind of lead frame that is used to support element at least one electronics or micromechanics.
Semiconductor element and the micro mechanical sensor of mechanical stress sensitivity is encapsulated in the special housing usually, this housing play the stress uncoupling based on its structure and employed material or avoid the effect of stress.This special housing for example is a ceramic shell or pre-molded (English: premolded) plastic casing, wherein at least one is installed in the casting material that chip in the housing is not applied in stress adjacent to each other and surrounds.For support semiconductor element or micro mechanical sensor, (English: lead frame), be used for the stress uncoupling, these lead frames are made of the material, for example alloy NiFe42 that have with the similar thermal coefficient of expansion of silicon to use lead frame usually.But alloy NiFe42 has shortcoming aspect conductivity and the thermal conductivity.The lead frame that is made of a kind of unified basically thickness of material is (English: die pad) by whole ground structure or be divided into part face island, that be separated from each other to a great extent in the assembly area of element.
Advantage of the present invention
The present invention is based on a kind of lead frame that is used to support element at least one electronics or micromechanics.Core of the present invention is that lead frame has than thickness littler in another zone at least one first area.Advantageously, by being avoided by structurized lead frame on its thickness or reducing to be applied to mechanical stress on element electronics or micromechanics that is installed on the lead frame at least.Advantageously, both can reduce to reduce to depend on the stress of temperature again from the mechanical stress of outside introducing.
According to a particularly advantageous configuration regulation of lead frame of the present invention, the zone of littler thickness is set at element electronics and/or micromechanics place at least in part.Advantageously can less mechanical stress be delivered on the element by lead frame in the case by the assembly area of lead frame and element.Further advantageously, the general construction height of lead frame and element can be reduced.Can realize a kind of compact structure thus.
According to another favourable configuration regulation of lead frame of the present invention, lead frame has at least one subsidence part, and element electronics and/or micromechanics is set in this subsidence part.Advantageously, this subsidence part has the functional part of a hinge form, by this functional part, affact on the lead frame mechanical stress can with the element uncoupling that is installed on the lead frame.In addition advantageously, can reduce the structure height of element on lead frame by being provided with in subsidence part.
A favourable configuration regulation, make by set out at least one groove from lead frame the first area.Another favourable configuration regulation, make by the face attenuate of lead frame the first area.Another favourable configuration regulation, make by the structurized attenuate of lead frame the first area.Advantageously, these three configurations also can be each other or combination in any jointly.
A particularly advantageous configuration regulation, lead frame is set in the housing, especially is arranged in the common injection moulding housing (molded shell), and this housing for example also is used for the not too responsive integrated circuit of counter stress in the prior art.This injection moulding housing is made of plastics usually, and can directly seal lead frame and be installed in element on the lead frame.The stress uncoupling characteristic of the lead frame that makes up according to the present invention is particularly advantageous in an injection molding housing, because injection moulding housing, based on its deformability and fill in fully, be easy to the mechanical stress by external action is delivered on the lead frame and element of enclosure interior.Usually produce internal stress or mechanical grip mutually by each material in this external injection moulding housing.This internal stress for example in manufacture process when chip adhesive (this chip adhesive is fixed on element on the lead frame) hardens, perhaps also produce being injected into moulding mixture when cooling.Here the characteristic that reduces according to the stress of lead frame of the present invention can advantageously be suitable for, and this characteristic makes and parts can be installed on the lead frame that can simply make, and therefore is installed in the favourable injection moulding housing of cost.
Other favourable configuration can be by obtaining in the dependent claims.
Accompanying drawing
Embodiments of the invention are illustrated in the accompanying drawings, and are carried out detailed description in the following description.
Fig. 1 illustrates a lead frame that is used to support an element in the prior art.
Fig. 2 A illustrates according to of the present invention has lead frame thickness, that be used to support an element that reduces from upper surface.
Fig. 2 B illustrates according to of the present invention has lead frame thickness, that be used to support an element that reduces from the bottom surface.
Fig. 2 C illustrates according to of the present invention to have at the lead frame thickness that reduces from the two sides, that be used to support an element.
Fig. 3 illustrates a lead frame that has subsidence part that is used to support an element in the prior art.
Fig. 4 A illustrates according to lead frame subsidence part, that be used to support an element with the thickness that reduces from upper surface that has of the present invention.
Fig. 4 B illustrates according to lead frame subsidence part, that be used to support an element with the thickness that reduces from the bottom surface that has of the present invention.
Fig. 4 C illustrates according to lead frame subsidence part, that be used to support an element with the thickness that reduces from the two sides that has of the present invention.
Fig. 5 A and 5B illustrate a lead frame that has the first area of a plurality of littler thickness according to of the present invention.
The explanation of embodiment
To describe the present invention in detail by the execution mode of the following stated.
Fig. 1 illustrates a lead frame that is used to support an element in the prior art.Shown is: the lead frame 10 with flat, level of uniform thickness basically; An element 12 that is installed on this lead frame; And the pressure welding silk 14 that electrically contacts that is used for described lead frame and element.
Fig. 2 A illustrates according to of the present invention has lead frame thickness, that be used to support an element that reduces from upper surface.Lead frame 11 according to the present invention has a first area 21 that has the thickness that reduces and has the zone 23 of through thickness with another.In this embodiment, make by the groove 20 on the end face that is arranged on lead frame 11 first area 21.Groove 20 can or also can be made by etching by compacting or another kind of mechanical processing method.Groove 20 reaches in size and is constructed in this wise in shape, makes element 12 only be installed on the first area 21 of lead frame 11.When being installed in described element on the lead frame or because the different thermal expansion meeting of these parts produces stress in lead frame 11, this stress is passed on the element 12.According to the present invention, size is determined in first area 21 weakenedly, and the first area is applied to big restoring force on the element 12 at clamping (Verspannung) Shi Buhui thus.By element 12 being installed in the groove 20 on the first area 21, element 12 compared with prior art is reduced with the total height of lead frame 11.
Fig. 2 B illustrates according to of the present invention has lead frame thickness, that be used to support an element that reduces from the bottom surface.The difference of the form of implementation described in the form of implementation here and Fig. 2 A is, make by the groove 22 on the bottom surface that is arranged on lead frame 11 first area 21.According to the present invention, size is determined in first area 21 weakenedly, and the first area is applied to big restoring force on the element 12 at clamping (Verspannung) Shi Buhui thus.Shown in form of implementation in, element 12 fully is arranged on the first area 21.Groove 22 is configured adaptedly to this on shape and size, and relatively is provided with just with this element 12.But also can be that groove 22 is constructed with other shape and size.Also can be that element 12 is provided with each other with the first area 21 that has groove 22 with misplacing in addition.12 of elements can partly be arranged on the first area 21 and partly be arranged on another zone 23.So first area 21 and element 12 are only partly overlapping.
Fig. 2 C illustrates according to of the present invention has lead frame thickness, that be used to support an element that reduces from the two sides.Be combined in this form of implementation at the embodiment shown in Fig. 2 A and the 2B.Make by the groove 24 and 26 on the end face that is separately positioned on the lead frame 11 and bottom surface first area 21.According to the present invention, size is determined in first area 21 weakenedly, and the first area is applied to big restoring force on the element 12 at clamping (Verspannung) Shi Buhui thus.By element 12 being installed in the groove 24 on the first area 21, element 12 compared with prior art is reduced with the total height of lead frame 11.
Fig. 3 illustrates a lead frame that has subsidence part that is used to support an element in the prior art.Shown is: the lead frame 30 with flat, level of uniform thickness basically; An element 12 that is installed on this lead frame; And be used for the pressure welding silk 14 that electrically contacts of described lead frame and element.This lead frame has a subsidence part 40, and element 12 is installed in this subsidence part.This subsidence part is used to make the structure height of element 12 on lead frame 30 to reduce in addition.
Fig. 4 A illustrates according to lead frame subsidence part, that be used to support an element with the thickness that reduces from end face that has of the present invention.Lead frame 31 according to the present invention has the first area 21 and another zone that has through thickness 23 that have the thickness that reduces.In this embodiment, make by the groove 20 on the end face that is arranged on lead frame 31 first area 21.Groove 20 can by any suitable, make by the known processing method of prior art.Groove 20 reaches in size and is constructed in this wise in shape, makes element 12 only be installed on the first area 21 of lead frame 31.Lead frame 31 according to the present invention has a subsidence part 40 that has sidewall 42.First area 21 is set in this subsidence part 40.If by the outside mechanical stress is incorporated in the lead frame 31, then sidewall 42 is as working at the leg that has a hinge to the transition portion in zone 21.The mechanical load that works causes the change of the position of sidewall 42.Therefore mechanical stress is reduced, and at least in part with element 12 uncouplings.According to the present invention, size is determined in first area 21 weakenedly in addition, and the first area is applied to big restoring force on the element 12 at clamping (Verspannung) Shi Buhui thus.Groove 20 is arranged on the end face of lead frame 31, can realizes that the aspect ratio prior art of element 12 on lead frame 31 further reduces on the bottom of subsidence part 40.
Fig. 4 B illustrates according to lead frame subsidence part, that be used to support an element with the thickness that reduces from the bottom surface that has of the present invention.Different with form of implementation described in Fig. 4 A, make in the following way first area 21 here, and promptly lead frame 31 is thinned from the bottom surface.This can realize by material removal.But can consider that also the littler thickness of lead frame 31 in first area 21 is by the materials processing of non-excision, for example by suppressing or producing by other shaping process technology.Material is cut erosion or the result of the processing that is shaped is used as and scabbles 44 and illustrate.This structure plays the effect that reduces stress described in Fig. 4 A.
Fig. 4 C illustrates according to lead frame subsidence part, that be used to support an element with the thickness that reduces from the two sides that has of the present invention.Be combined in this form of implementation at the embodiment shown in Fig. 4 A and the 4B.46 make by the scabbling on the bottom surface of groove 24 on the end face that is arranged on lead frame 31 and lead frame 31 first area 21.This structure plays the effect that reduces stress described in Fig. 4 A.In addition, by element 12 being installed in the groove 24 on the first area 21, the element 12 and the total height of lead frame 11 compared with prior art are reduced.
Fig. 5 A and B illustrate a lead frame that has the first area of a plurality of less thickness according to of the present invention.Fig. 5 A illustrates one according to lead frame 51 of the present invention with the vertical view from the top, and this lead frame has an element mounted thereto 12 and a plurality of first area that reduces thickness 21 on the bottom surface.Fig. 5 B illustrates the section AA of this same object with some different ratio.Make by a plurality of grooves 52 on the bottom surface of lead frame 51 these first areas 21.The layout of these first areas 21, number and shape are only schematically reached for example to be represented.Can select these parameters in order to satisfy different requirements.Therefore for example can consider, can some first areas 21 complementally be set with the layout of a plurality of elements 12 on lead frame 51.This structure plays the effect that reduces stress described in Fig. 2 A.Lead frame 11 according to Fig. 5 A and 5B according to the present invention also can be configured to be provided with a subsidence part.
More than can be installed in the housing described in Fig. 1 to 5 according to lead frame 11,31 of the present invention, that have element mounted thereto 12.This housing especially can be an injection moulding housing (molded shell). Lead frame 11,31 is sealed with injection-moulding plastic in a mould with element 12 for this reason.The result has produced an electronic component in the common encapsulation of an integrated circuit.
It is also conceivable that other embodiment in addition.Especially the feature of described embodiment can be made up mutually.
Claims (7)
1. structurized lead frame (11 that is used to support element at least one electronics and/or micromechanics (12), 31), it is characterized in that described lead frame (11,31) has than at the medium and small thickness in another zone (23) at least one first area (21).
2. according to the structurized lead frame (11,31) of claim 1, it is characterized in that the first area of described littler thickness (21) are set at element described electronics and/or micromechanics (20) at least in part and locate.
3. according to the structurized lead frame (31) of claim 1, it is characterized in that described lead frame (31) has at least one subsidence part, element described electronics and/or micromechanics (20) is set in this subsidence part.
4. according to the structurized lead frame (11,31) of claim 1, it is characterized in that described first area (21) make by setting out at least one groove (20,22,24,26) from described lead frame (11,31).
5. according to the structurized lead frame (31) of claim 1, it is characterized in that described first area (21) make by the face attenuate (44) of described lead frame (31).
6. according to the structurized lead frame (31) of claim 1, it is characterized in that described first area (21) make by the structurized attenuate (52) of described lead frame (31).
7. according to the structurized lead frame (11,31) of claim 1, it is characterized in that described lead frame (11,31) is set in the housing, especially be set in the injection moulding housing.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE102004063544.7 | 2004-12-30 | ||
| DE102004063544A DE102004063544A1 (en) | 2004-12-30 | 2004-12-30 | Structured carrier strip |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN101095229A true CN101095229A (en) | 2007-12-26 |
Family
ID=35429412
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNA2005800454709A Pending CN101095229A (en) | 2004-12-30 | 2005-10-07 | Structured lead frame |
Country Status (6)
| Country | Link |
|---|---|
| EP (1) | EP1834356A1 (en) |
| JP (1) | JP2008525207A (en) |
| KR (1) | KR20070086793A (en) |
| CN (1) | CN101095229A (en) |
| DE (1) | DE102004063544A1 (en) |
| WO (1) | WO2006072474A1 (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102372248A (en) * | 2010-07-07 | 2012-03-14 | 罗伯特·博世有限公司 | Sensor module and method for manufacturing the same |
| CN103283017A (en) * | 2011-01-05 | 2013-09-04 | 罗伯特·博世有限公司 | Electronic assembly with improved thermal management |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3436810A (en) * | 1967-07-17 | 1969-04-08 | Jade Corp | Method of packaging integrated circuits |
| US3559285A (en) * | 1968-01-08 | 1971-02-02 | Jade Corp | Method of forming leads for attachment to semi-conductor devices |
| US4099200A (en) * | 1976-03-26 | 1978-07-04 | Raytheon Company | Package for semiconductor beam lead devices |
| US6777788B1 (en) * | 2002-09-10 | 2004-08-17 | National Semiconductor Corporation | Method and structure for applying thick solder layer onto die attach pad |
-
2004
- 2004-12-30 DE DE102004063544A patent/DE102004063544A1/en not_active Ceased
-
2005
- 2005-10-07 CN CNA2005800454709A patent/CN101095229A/en active Pending
- 2005-10-07 EP EP05796956A patent/EP1834356A1/en not_active Ceased
- 2005-10-07 KR KR1020077014881A patent/KR20070086793A/en not_active Application Discontinuation
- 2005-10-07 WO PCT/EP2005/055081 patent/WO2006072474A1/en active Application Filing
- 2005-10-07 JP JP2007548778A patent/JP2008525207A/en not_active Withdrawn
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102372248A (en) * | 2010-07-07 | 2012-03-14 | 罗伯特·博世有限公司 | Sensor module and method for manufacturing the same |
| CN103283017A (en) * | 2011-01-05 | 2013-09-04 | 罗伯特·博世有限公司 | Electronic assembly with improved thermal management |
Also Published As
| Publication number | Publication date |
|---|---|
| DE102004063544A1 (en) | 2006-07-13 |
| WO2006072474A1 (en) | 2006-07-13 |
| KR20070086793A (en) | 2007-08-27 |
| EP1834356A1 (en) | 2007-09-19 |
| JP2008525207A (en) | 2008-07-17 |
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| AD01 | Patent right deemed abandoned | ||
| C20 | Patent right or utility model deemed to be abandoned or is abandoned |