CN101093877A - Light-emitting device, image forming apparatus, display device, and electronic apparatus - Google Patents

Abstract

A light-emitting device includes: a substrate; a light reflection layer that is formed on the substrate and reflects light; a first electrode that is formed on the light reflection layer and transmits light; a light-emitting layer that is formed on the first electrode and emits light; a second electrode that is formed on the light-emitting layer and transmits a part of light from the light-emitting layer and reflects the rest of the light from the light-emitting layer; and a conductive transflective layer that is formed on the second electrode and that transmits a part of light from the second electrode and reflects the rest of the light from the second electrode. A work function of the second electrode is 4 eV (electron volts) or less. The conductive transflective layer is formed of a metal material having a higher optical reflectance than the second electrode.

Description

Light-emitting device, image processing system, display unit and electronic equipment

Technical field

In the light-emitting device of the EL element that possesses organic EL (Electro Luminescent) element or inorganic EL element etc., look at the increase of the arrowbandization and the outgoing light quantity of luminescent spectrum at its more purposes last issue.Can enumerate collocating medium speculum between EL element and substrate thereof and constitute the light-emitting device of micro-cavities, as the light-emitting device that can realize these expectations (patent documentation 1).This light-emitting device is a bottom emissive type, from its substrate of light transmission of EL element and outgoing.

Background technology

In possessing the light-emitting device of EL element, the substrate of EL element is very thick.Therefore, the viewpoint that increases from the outgoing light quantity, from the light of EL element than the light-emitting device of bottom emissive type more preferably from the light-emitting device of the top emission structure of an opposite side outgoing with substrate.In addition, in the light-emitting device of top emission structure, also expecting the further increase of outgoing light quantity.And, the light-emitting device that will have organic EL as the purposes of the exposure device of the image processing system of electrofax mode on and on the purposes as the display unit of display image, expecting the further arrowbandization of luminescent spectrum.So consideration is applied to patent documentation 1 described technology the light-emitting device of top emission structure.

But, in the light-emitting device of the top emission structure of using patent documentation 1 described technology, in it is made, need on the EL element that forms on the substrate, form dielectric mirror, because this formation exists EL element to damage bigger anxiety.Owing to damage the obvious variation of the characteristics of luminescence of bigger EL element, therefore be difficult to patent documentation 1 described technology is applied in the light-emitting device of top emission structure.

Patent documentation 1: No. 3274527 communique of Japan's special permission

Summary of the invention

At this, the invention provides light-emitting device, image processing system, display unit and the electronic equipment of top emission structure of the increase of a kind of arrowbandization that realizes luminescent spectrum or outgoing light quantity.

The invention provides a kind of light-emitting device, it is characterized in that, possess: substrate; Reflection layer is formed on the aforesaid substrate and to light and reflects; First electrode is formed on the above-mentioned reflection layer and makes light transmission; Luminescent layer is formed on above-mentioned first electrode also luminous; Second electrode is formed on the above-mentioned luminescent layer, and makes from a part of light transmission of above-mentioned luminescent layer and another part light is reflected; With the conductivity semi-reflective layer, be formed on above-mentioned second electrode, and make from a part of light transmission of above-mentioned second electrode and another part light is reflected, the work function of above-mentioned second electrode is below 4 electron-volts, and above-mentioned conductivity semi-reflective layer is formed than the high metal material of above-mentioned second electrode by light reflectivity.

In this light-emitting device, light transmission second electrode and conductivity semi-reflective layer that luminescent layer sent.Therefore, this light-emitting device can be the light-emitting device of top emission structure.In addition, in this light-emitting device, can constitute: the resonance structure that comes and goes the light intensity enhancing that makes specific wavelength by the light that luminescent layer sent between reflection layer and conductivity semi-reflective layer is a micro-cavities.Therefore, by the present invention, can provide a kind of light-emitting device that dielectric mirror also can constitute the top emission structure of micro-cavities that on luminescent layer, do not form.As mentioned above, by the present invention, can provide the light-emitting device of top outgoing type of the increase of a kind of arrowbandization that realizes luminescent spectrum and outgoing light quantity.

In addition, in this light-emitting device, on work function is second electrode below 4 electron-volts, be laminated with the reflection of light rate conductivity semi-reflective layer higher, provide necessary major part reflection by the conductivity semi-reflective layer rather than second electrode than second electrode.By adopting this structure, and be that second electrode below 4 electron-volts forms thicklyer and do not need the structure of conductivity semi-reflective layer to compare with work function, can make the above light that layer the absorbed reduction of second electrode.Therefore, by this light-emitting device, can realize the increase of outgoing light quantity.

In addition, first electrode, luminescent layer and second electrode constitute light-emitting component.But illustration through the excited state of exciton and luminous EL element as this light-emitting component.As EL element, but the inorganic EL element that organic EL that the illustration luminescent layer is formed by organic material and luminescent layer are formed by inorganic material.

In above-mentioned light-emitting device, also can include silver, magnesium or aluminium in the above-mentioned metal material.By adopting this metal material, can obtain above-mentioned effect reliably.In addition, from the angle of the arrowbandization of luminescent spectrum, aluminum ratio silver is preferred, and magnesium is more preferred than aluminium, and from the increasing angles of outgoing light quantity, magnesium is more preferred than aluminium, silver is more preferred than magnesium.

In above-mentioned light-emitting device, also can include silver, magnesium or aluminium in the formation material of above-mentioned reflection layer.By adopting this metal material, can obtain above-mentioned effect reliably.In addition, from the arrowbandization of luminescent spectrum and the increasing angles of outgoing light quantity, the material that comprises silver is preferred, and the material that comprises aluminium from the angle of the easy type of the manufacturing that improves light-emitting device is preferred.

The invention provides a kind of light-emitting device, it is characterized in that, possess: substrate; The reflector is formed on the aforesaid substrate and to light and reflects; Hyaline layer is formed on the above-mentioned reflector and makes light transmission; First electrode is formed on the above-mentioned hyaline layer and makes light transmission; Luminescent layer is formed on above-mentioned first electrode also luminous; With second electrode, be formed on the above-mentioned luminescent layer, and make from a part of light transmission of above-mentioned luminescent layer and another part light is reflected, above-mentioned hyaline layer is formed by the little material of above-mentioned first electrode of extinction coefficient ratio, and the work function of above-mentioned second electrode is below 4 electron-volts.

In this light-emitting device, light transmission second electrode that luminescent layer sent.Therefore, this light-emitting device can be the light-emitting device of top emission structure.In addition, in this light-emitting device, can constitute: the resonance structure that comes and goes the light intensity enhancing that makes specific wavelength by the light that luminescent layer sent between the layer on reflection layer and thick second electrode of second electrode is a micro-cavities.Therefore, by the present invention, can provide a kind of light-emitting device that dielectric mirror also can constitute the top emission structure of micro-cavities that on luminescent layer, do not form.As mentioned above, by the present invention, can provide the light-emitting device of top emission structure of the increase of a kind of arrowbandization that realizes luminescent spectrum and outgoing light quantity.

In addition, in this light-emitting device, owing between the reflector and first electrode, have hyaline layer, therefore by not making the first electrode thickening make the hyaline layer thickening, can make the distance and the luminous dominant wavelength of luminescent layer between the layer on the reflection layer and second electrode or second electrode satisfy the relation of regulation, and the light of luminous dominant wavelength is fully resonated.Because the extinction coefficient of the formation material of extinction coefficient ratio first electrode of the formation material of hyaline layer is little, therefore making hyaline layer thickening one side more can suppress the absorption of light than making the first electrode thickening, one side.Also, can realize the further increase of outgoing light quantity promptly by this light-emitting device.

In addition, first electrode, luminescent layer and second electrode constitute light-emitting component.But illustration through the excited state of exciton and luminous EL element as this light-emitting component.But the illustration luminescent layer is used as EL element by organic EL and the luminescent layer that organic material forms by the inorganic EL element that inorganic material forms.

In above-mentioned light-emitting device, the formation material of above-mentioned hyaline layer also can be silicon dioxide or silicon nitride, also comprises silver, magnesium or aluminium in the formation material in above-mentioned reflector.By above-mentioned such, can obtain above-mentioned delustring reliably.In addition, from the arrowbandization of luminescent spectrum and the increasing angles of outgoing light quantity, the material that comprises silver is preferred, and the material that comprises aluminium from the angle of the easy type of the manufacturing that improves light-emitting device is preferred.

In above-mentioned light-emitting device, the thickness of above-mentioned first electrode is less than 60 nanometers, satisfy the mode of the relation of regulation according to the luminous dominant wavelength of above-mentioned reflector and above-mentioned second distance between electrodes and above-mentioned luminescent layer, set a side of above-mentioned hyaline layer and above-mentioned luminescent layer or two sides' thickness and also can.If the thickness of first electrode less than 60 nanometers, then needs to make at least one thickening of hyaline layer, luminescent layer and second electrode.From outgoing light quantity increasing angles, make a side of hyaline layer and luminescent layer or two side's thickening ratios make the second electrode thickening preferred.As from the foregoing, by this mode, can realize the further increase of outgoing light quantity.In addition, the relation of regulation described herein is for light round condition that fully is enhanced the back from the second electrode outgoing between the reflection layer and second electrode of luminous dominant wavelength, roughly consistent with the resonance condition in this mode.Also i.e. satisfying and the resonance condition equivalence that roughly satisfies in this mode of rated condition in this mode.

In above-mentioned light-emitting device, also can also possess the conductivity reflector, be formed on above-mentioned second electrode, and make from a part of light transmission of above-mentioned second electrode and another part light is reflected, above-mentioned conductivity semi-reflective layer is formed than the high metal material of above-mentioned second electrode by light reflectivity.By this mode, and be that second electrode below 4 electron-volts forms thicklyer and do not need the structure of conductivity semi-reflective layer to compare with work function, can reduce the above light that layer absorbed of second electrode.Therefore, by this light-emitting device, can realize the increase of outgoing light quantity.

In aforesaid way, also can include silver, magnesium or aluminium in the formation material of above-mentioned conductivity type half reflection.By the way, can obtain above-mentioned effect reliably.In addition, from the angle of the arrowbandization of luminescent spectrum, aluminum ratio silver is preferred, and magnesium is more preferred than aluminium, and from the increasing angles of outgoing light quantity, magnesium is more preferred than aluminium, silver is more preferred than magnesium.

In this external aforesaid way, the thickness of above-mentioned first electrode is less than 60 nanometers, satisfy the mode of the relation of regulation according to the luminous dominant wavelength of distance between above-mentioned reflector and the above-mentioned conductivity semi-reflective layer and above-mentioned luminescent layer, at least one the thickness of setting in above-mentioned hyaline layer, above-mentioned luminescent layer and the above-mentioned conductivity semi-reflective layer also can.If the thickness of first electrode less than 60 nanometers, then needs to make at least one thickening in hyaline layer, luminescent layer, second electrode and the conductivity semi-reflective layer.From outgoing light quantity increasing angles, make at least one side's thickening ratio of hyaline layer, luminescent layer and conductivity semi-reflective layer make the second electrode thickening preferred.As from the foregoing, by this mode, can realize the further increase of outgoing light quantity.In addition, the relation of regulation described herein is for light round condition that fully is enhanced the back from the outgoing of conductivity semi-reflective layer between reflection layer and conductivity semi-reflective layer of luminous dominant wavelength, roughly consistent with the resonance condition in this mode.Also i.e. satisfying and the resonance condition equivalence that roughly satisfies in this mode of rated condition in this mode.

In addition, the invention provides a kind of electronic equipment that possesses above-mentioned light-emitting device or above-mentioned each mode.For example be following image processing system and display unit, this image processing system is characterised in that, possess above-mentioned light-emitting device and image-carrier, make above-mentioned image-carrier charged, the charged face irradiation of above-mentioned image-carrier is formed sub-image from the light of above-mentioned light-emitting device, and make toner form video picture attached to above-mentioned sub-image, and above-mentioned video picture is copied to other objects, this display unit is characterised in that, possesses above-mentioned light-emitting device, acceptance be used for display image view data supply and make above-mentioned luminescent layer luminous with the pairing brightness of this view data, show this image thus.By this electronic equipment, can obtain the arrowbandization of luminescent spectrum of light-emitting device or the caused various effects of increase of outgoing light quantity (for example improve the quality of the formed image of image processing system or improve the quality of the shown image of display unit).

Description of drawings

Fig. 1 is the cutaway view of the part of the relevant light-emitting device 10 of expression first execution mode of the present invention.

Fig. 2 for expression from light-emitting component 12 radiation of light-emitting device 10 and from the figure of the spectrum of the light (emergent light) of light-emitting device 10 outgoing.

Fig. 3 is the figure of characteristic of the emergent light of presentation graphs 2.

Fig. 4 comes the figure of spectrum of the emergent light of the relevant light-emitting device of the variation (first variation) of selfluminous device 10 for expression.

Fig. 5 is the figure of characteristic of the emergent light of presentation graphs 4.

Fig. 6 is illustrated in the relevant light-emitting device of first variation, the figure of the spectrum of the emergent light the when thickness (p) of conductivity semi-reflective layer 17 is changed.

Fig. 7 is the figure of characteristic of the emergent light of presentation graphs 6.

Fig. 8 is the figure of expression from the spectrum of the emergent light of the relevant light-emitting device of the conventional example (first conventional example) of comparing with the light-emitting device of first variation.

Fig. 9 is the figure of characteristic of the emergent light of presentation graphs 8.

Figure 10 is the figure of expression from the spectrum of the emergent light of the light-emitting device relevant with the variation (second variation) of the light-emitting device of first variation.

Figure 11 is the figure of the characteristic of the emergent light of expression Figure 10.

Figure 12 is the figure of expression from the spectrum of the emergent light of the light-emitting device relevant with the variation (the 3rd variation) of the light-emitting device of first variation.

Figure 13 is the figure of the emergent light characteristic of expression Figure 12.

Figure 14 is the cutaway view of the part of the relevant light-emitting device 20 of expression second execution mode of the present invention.

Figure 15 for expression from the light-emitting component 22G radiation of light-emitting device 20 and from the figure of the spectrum of the G light of light-emitting device 20 outgoing.

Figure 16 is the figure of the characteristic of the emergent light of expression Figure 15.

Figure 17 for expression from light-emitting component 22B radiation and from the figure of the spectrum of the B light of light-emitting device 20 outgoing.

Figure 18 is the figure of the characteristic of the emergent light of expression Figure 17.

Figure 19 is the figure of expression from the spectrum of the emergent light (G light) of the relevant light-emitting device of the conventional example (second conventional example) of comparing with light-emitting device 20.

Figure 20 is the figure of the characteristic of the emergent light of expression Figure 19.

Figure 21 is the figure of expression from the spectrum of the emergent light (B light) of the relevant light-emitting device of the conventional example (second conventional example) of comparing with light-emitting device 20.

Figure 22 is the figure of the characteristic of the emergent light of expression Figure 21.

Figure 23 is the cutaway view of the part of the relevant light-emitting device 50 of expression the 3rd execution mode of the present invention.

Figure 24 for expression from light-emitting component 52 radiation of light-emitting device 50 and from the figure of the spectrum of the light (emergent light) of light-emitting device 50 outgoing.

Figure 25 is the figure of the characteristic of the emergent light of expression Figure 24.

Figure 26 comes the figure of spectrum of the emergent light of the relevant light-emitting device of the variation (the 4th variation) of selfluminous device 50 for expression.

Figure 27 is the figure of the characteristic of the emergent light of expression Figure 26.

Figure 28 comes the figure of spectrum of the emergent light of the relevant light-emitting device of other variation (the 5th variation) of selfluminous device 50 for expression.

Figure 29 is the figure of the characteristic of the emergent light of expression Figure 28.

Figure 30 comes the figure of spectrum of the emergent light of the relevant light-emitting device of another other variation (the 6th variation) of selfluminous device 50 for expression.

Figure 31 is the figure of the characteristic of the emergent light of expression Figure 30.

Figure 32 is the figure of expression from the spectrum of the emergent light of the relevant light-emitting device of the conventional example (the 3rd conventional example) of comparing with the light-emitting device of light-emitting device 50 and each variation.

Figure 33 is the figure of the characteristic of the emergent light of expression Figure 32.

Figure 34 is the cutaway view of the part of the relevant light-emitting device 60 of expression the 4th execution mode of the present invention.

Figure 35 for expression from the light-emitting component 62G radiation of light-emitting device 60 and from the figure of the spectrum of the G light of light-emitting device 60 outgoing.

Figure 36 is the figure of the characteristic of the emergent light of expression Figure 35.

Figure 37 for expression from light-emitting component 62B radiation and from the figure of the spectrum of the B light of light-emitting device 60 outgoing.

Figure 38 is the figure of the characteristic of the emergent light of expression Figure 37.

Figure 39 comes the figure of spectrum of the emergent light (G light) of the relevant light-emitting device of the variation (the 7th variation) of selfluminous device 60 for expression.

Figure 40 is the figure of the characteristic of the emergent light of expression Figure 39.

Figure 41 comes the figure of spectrum of the emergent light (G light) of the relevant light-emitting device of other variation (the 8th variation) of selfluminous device 60 for expression.

Figure 42 is the figure of the characteristic of the emergent light of expression Figure 41.

Figure 43 comes the figure of spectrum of the emergent light (B light) of the relevant light-emitting device of other variation (the 8th variation) of selfluminous device 60 for expression.

Figure 44 is the figure of the characteristic of the emergent light of expression Figure 43.

Figure 45 is the figure of expression from the spectrum of the emergent light (G light) of the relevant light-emitting device of the conventional example (the 4th conventional example) of comparing with light-emitting device 60.

Figure 46 is the figure of the characteristic of the emergent light of expression Figure 45.

Figure 47 is the figure of expression from the spectrum of the emergent light (B light) of the relevant light-emitting device of the conventional example (the 4th conventional example) of comparing with light-emitting device 60.

Figure 48 is the figure of the characteristic of the emergent light of expression Figure 47.

Figure 49 is with the longitudinal section of light-emitting device 10 or light-emitting device 50 as an example of the image processing system of exposure device.

Figure 50 is with the longitudinal section of light-emitting device 10 or light-emitting device 50 as an example of another image processing system of line style exposure device.

Figure 51 is for representing employing light-emitting device 20 or light-emitting device 60 figure as the structure of the mobile model personal computer of display unit.

Figure 52 is for representing employing light-emitting device 20 or light-emitting device 60 figure as the structure of the portable telephone of display unit.

Figure 53 is for representing employing light-emitting device 20 or light-emitting device 60 figure as the structure of carrying information terminal of display unit.

10,20, the 60-light-emitting device among the figure:; 11,51-substrate; 12,22B, 22G, 22R, 52,62B, 62G, 62R-light-emitting component; 13,23,53,63-reflection layer; 14,24B, 24G, 24R, 54,64B, 64G, 64R-are as the transparency electrode of first electrode; 15,55,65B, 65G, 65R-luminescent layer; 16,26,56,66-is as the half reflection electrode of second electrode; 17,27,57,67-conductivity semi-reflective layer; 18,28,58, the transparent auxiliary electrode of 68-; 19,29,59,69-sealant; 25B, 25G, 25R-luminescent layer; 41,42-hyaline layer.

Embodiment

Below, with reference to accompanying drawing, the execution mode that the present invention is correlated with describes.In these accompanying drawings, make the ratio of the size of each layer and each parts suitably be different from actual size.

(first execution mode)

Fig. 1 is the cutaway view of the part of the relevant light-emitting device 10 of expression first execution mode of the present invention.This light-emitting device 10 has a plurality of light-emitting components 12 that dispose on substrate.In the drawings, an illustration three light-emitting components 12.Each light-emitting component 12 is OLED (OrganicLight Emitting Diode) element for organic EL.Also be that light-emitting device 10 is organic El device.

Substrate 11 is formed by for example glass, and its thickness is for example 500 μ m.Be formed with the reflection layer 13 that light is carried out total reflection on the substrate 11.Reflection layer 13 can carry out the resonance of light and be formed by the high material of light reflectivity, and level and smooth above it, its thickness is for example 200nm.The formation material of reflection layer 13 particularly is a silver, but present embodiment is out of shape, for aluminium also can, be to comprise that a side of silver or aluminium or two sides' alloy also can.

On reflection layer 13, form a plurality of light-emitting components 12.Each light-emitting component 12 has: be formed on transparency electrode (first electrode) 14 on the reflection layer 13, be formed on the transparency electrode 14 and thickness is the luminescent layer 15 of 170nm and is formed on translucent half reflection electrode (second electrode) 16 on the luminescent layer 15.Transparency electrode 14 electrode for incident light is seen through is that 1.7 ITO (Indium Tin Oxide) forms by refractive index, and its thickness is 125nm.

Will be through exciting luminous luminescent layer, being layered in to be used for the hole is injected on the hole injection layer of this luminescent layer and forming luminescent layer 15 in conjunction with the exciton that produced again by hole and electronics.Thus can be clear and definite, in the present embodiment, transparency electrode 14 is an anode, half reflection electrode 16 is a negative electrode, but present embodiment is out of shape, and anode and cathode is put upside down also can.The thickness of hole injection layer is 50nm, and its refractive index that forms material is for example 1.45.The thickness of the luminescent layer on the hole injection layer is 120nm, and its refractive index that forms material is for example 1.67.In addition, the next door that is used for that luminescent layer 15 is divided by every light-emitting component 12 form also can, do not form and can yet.In addition, present embodiment is out of shape, make luminescent layer 15 do not comprise hole injection layer also can, make luminescent layer 15 comprise that hole transporting layer, electron injecting layer or electron supplying layer also can.

Half reflection electrode 16 for the common thickness of all luminescent layer 15 be the electrode of 5nm, cover all luminescent layers 15.In addition, half reflection electrode 16 half-mirror for carrying out the resonance of light makes from a part of light transmission of luminescent layer 15 another part light is reflected.In addition, half reflection electrode 16 is formed by the metal of electronics injection, and its work function is below the 4eV (electron-volt).The formation material of half reflection electrode 16 is specially calcium, but also present embodiment can be out of shape, and the formation material of half reflection electrode 16 is adopted as lithium, strontium, barium, caesium, ytterbium or samarium.

On half reflection electrode 16, be formed with translucent conductivity semi-reflective layer 17.Conductivity semi-reflective layer 17 makes from a part of light transmission of half reflection electrode 16 another part light is reflected, and covers half reflection electrode 16, forms by compare the little metal of the high Bees Wax of light reflectivity with half reflection electrode 16, and its thickness is 8nm.The formation material of conductivity semi-reflective layer 17 is specially silver, but also can be out of shape present embodiment, and forms conductivity semi-reflective layer 17 by magnesium, platinum or aluminium.

On conductivity semi-reflective layer 17, form transparent auxiliary electrode 18.The transparency electrode that the conductivity that transparent auxiliary electrode 18 is double reflecting electrode 16 is assisted, and cover conductivity semi-reflective layer 17.Transparent auxiliary electrode 18 is formed by ITO, also can but present embodiment is out of shape and formed by indium-zinc oxide or indium gallium oxide.The thickness of transparent auxiliary electrode 18 is 100nm, but at random determines also can in the scope that obtains enough conductivity.In addition, also can with light-emitting component 12 non-overlapping portions in, on transparent auxiliary electrode 18 or replace transparent auxiliary electrode 18 and the metal auxiliary electrode is set.The metal auxiliary electrode is the metal electrode that the conductivity of double reflecting electrode 16 is assisted, and is formed by metal opaque and that conductance is high.

On transparent auxiliary electrode 18, form sealant 19.Sealant 19 is used for protecting all light-emitting components 12 not influenced by extraneous gas, is formed by transparent inorganic material.Therefore, by luminous caused radiant light outgoing of luminescent layer 15 by half reflection electrode 16, conductivity semi-reflective layer 17, transparent auxiliary electrode 18 and sealant 19.On the other hand, owing to have reflection layer 13, so radiant light is not from substrate 11 outgoing.Also be light-emitting device 10 be the light that comes self-emission device 12 from the light-emitting device of the emission type of the top outgoing of substrate 11 opposite sides.In addition, in the present embodiment, adopt and form the film phonograph seal method of sealant 19, but present embodiment is out of shape, and adopt other known encapsulating method also can by film forming.

It is micro-cavities that each light-emitting component 12 constitutes resonance structure with reflection layer 13 and conductivity semi-reflective layer 17.Therefore, promptly the resonate thickness of each layer in distance (L) and the micro-cavities and refractive index of distance between reflection layer 13 and the conductivity semi-reflective layer 17 is defined as and roughly satisfies resonance condition, and promptly wavelength is that the light of λ comes and goes between reflection layer 13 and conductivity semi-reflective layer 17 that to make wavelength be from the condition of light-emitting device 10 outgoing after the light of λ strengthens.

Specifically, in each micro-cavities, when the optical path length between reflection layer 13 and the conductivity semi-reflective layer 17 is made as d, determine L according to the mode of d=3/4 λ.λ is the luminous dominant wavelength of luminescent layer 15, is 630nm specifically.Therefore, determine L according to the roughly consistent mode of d and 3/4630=472.5nm.In addition, above-mentioned conditional (d=3/4 λ) is object with three grades light, and the light in that present embodiment is out of shape with not at the same level time is under the situation of object, and above-mentioned conditional is also different.

Fig. 2 for expression from light-emitting component 12 radiation and from the figure of the spectrum of the light (emergent light) of light-emitting device 10 outgoing.Fig. 3 is the figure of characteristic of the emergent light of presentation graphs 2.Shown in above-mentioned figure, the half range value bandwidth (half-amplitude duration) of the spectrum of emergent light is 52.5nm.This half width is below the half range value bandwidth of spectrum of the emergent light in the light-emitting device (existing apparatus) of existing top outgoing type.It also is the arrowbandization that light-emitting device 10 is realized luminescent spectrum.

In addition, outgoing beam is that total light flux taking-up efficient is 0.301 to the ratio of the global radiation light beam of light-emitting component 12.This efficient is than the efficient height in the existing apparatus.It also is the increase that light-emitting device 10 is realized the outgoing light quantity.In addition, the x value based on the colourity of CIEI931 of emergent light is that CIEI931x is 0.685, and the y value of the colourity of the CIEI931 of emergent light is that CIEI931y is 0.315.

In addition, about in the emergent light, along the light (front emergent light) of advancing for the direction (frontal) in the scopes of ± 15 degree with the angle that normal constituted of exit facet, half width is 51.5nm, and luminous power is that frontal power taking-up efficient is 0.02746 to the ratio of the luminous power of the global radiation light of light-emitting component 12.That is, light-emitting device 10 is also realized the increase of the arrowbandization and the outgoing light quantity of luminescent spectrum for the front emergent light.

In addition, the aberration of the relative emergent light of advancing along true front of emergent light (front edge emergent light) (real face emergent light) of advancing at the edge of above-mentioned ± 15 degree scopes is that true edge aberration (true edge aberration) is 0.004.This is very little value, and the colourity of expression emergent light not too depends on looks into the distance direction.In addition, true edge aberration is the positive square root of quadratic power sum of the difference of the quadratic power of difference of the CIE1931x between real face emergent light and the front edge emergent light and the CIE1931y between real face emergent light and the front edge emergent light.

Fig. 4 is the figure of expression from the spectrum of the emergent light of the light-emitting device relevant with the variation (first variation) of light-emitting device 10.Fig. 5 is the figure of characteristic of the emergent light of presentation graphs 4.The reflection layer 13 of this light-emitting device is formed by aluminium.In this light-emitting device, the half range value bandwidth of the spectrum of emergent light is 53.3nm, and it is 0.212 that total light flux takes out efficient.In addition, about the front emergent light, half width is 52.0nm, and it is 0.02166 that the power of frontal takes out efficient.Also promptly this light-emitting device is realized the arrowbandization of luminescent spectrum and the increase of outgoing light quantity.

Double amplitude bandwidth, total light flux take out efficient between the relevant light-emitting device of light-emitting device 10 and first variation, frontal power takes out efficient and compares, can be clearly to see the formation material silver of reflection layer 13 as from the viewpoint of the increase of the arrowbandization of luminescent spectrum and outgoing light quantity more preferred than aluminium.On the other hand, from the viewpoint of the property easy to manufacture raising of light-emitting device, aluminum ratio silver is preferred.

Fig. 6 is illustrated in the relevant light-emitting device of first variation, the figure of the spectrum of the emergent light the when thickness (p) of conductivity semi-reflective layer 17 is changed.Fig. 7 is the figure of characteristic of the emergent light of presentation graphs 6.Wherein, in Fig. 6, only represent p=5,8, the spectrum during 20nm.Can be clear and definite by above-mentioned figure, if conductivity semi-reflective layer 17 thickenings, then half range value bandwidth narrows down, frontal power takes out the efficient reduction on the other hand.Conversely, if 17 attenuation of conductivity semi-reflective layer, then half range value bandwidth broadens, and frontal power takes out the efficient raising on the other hand.The situation that frontal power takes out the efficient maximum is the situation of p=8nm, and the light-emitting device of this moment is the relevant light-emitting device of first variation.

Fig. 8 is the figure of expression from the spectrum of the emergent light of the relevant light-emitting device of the conventional example (first conventional example) of comparing with the light-emitting device of first variation.Fig. 9 is the figure of characteristic of the emergent light of presentation graphs 8.First conventional example is in the relevant light-emitting device of first variation, makes half reflection electrode 16 thickenings and does not need the light-emitting device of conductivity semi-reflective layer 17.Specifically, half reflection electrode in the relevant light-emitting device of first conventional example 16 is formed by calcium, and its thickness is 15nm.

In this light-emitting device, the half range value bandwidth of the spectrum of emergent light is 60.6nm, and it is 0.202 that total light flux takes out efficient.In addition, for the front emergent light, half range value bandwidth is 59.0nm, and it is 0.01923 that frontal power takes out efficient.If the numerical value in the light-emitting device that above-mentioned numerical value is relevant with first variation is compared, still be the viewpoint of increase of outgoing light quantity no matter as can be known then from the viewpoint of the arrowbandization of luminescent spectrum, relevant light-emitting device one side of first variation is excellence all.Hence one can see that, from the viewpoint of the increase of the arrowbandization of luminescent spectrum and outgoing light quantity, it only is the structure of thicker half reflection electrode 16 that structure one side behind the conductivity semi-reflective layer 17 that stacked light reflectivity is higher and light disappearance coefficient is little on the thin half reflection electrode 16 is better than.

Figure 10 is the figure of expression from the spectrum of the emergent light of the relevant light-emitting device of the variation (second variation) of the light-emitting device of first variation.Figure 11 is the figure of the characteristic of the emergent light of expression Figure 10.The conductivity semi-reflective layer 17 of this light-emitting device is formed by aluminium, and its thickness is 6nm.In this light-emitting device, the half range value bandwidth of the spectrum of emergent light is 44.5nm, and it is 0.136 that total light flux takes out efficient.In addition, about the front emergent light, half range value bandwidth is 44.1nm, and it is 0.14448 that frontal power takes out efficient.Also promptly this light-emitting device can be realized the increase of the arrowbandization and the outgoing light quantity of luminescent spectrum.

Figure 12 is the figure of expression from the spectrum of the emergent light of the relevant light-emitting device of the variation (the 3rd variation) of the light-emitting device of first variation.Figure 13 is the figure of the characteristic of the emergent light of expression Figure 12.The conductivity semi-reflective layer 17 of this light-emitting device is formed by magnesium, and its thickness is 5nm.In this light-emitting device, the half range value bandwidth of the spectrum of emergent light is 41.0nm, and it is 0.137 that total light flux takes out efficient.In addition, for the front emergent light, half range value bandwidth is 40.8nm, and it is 0.01589 that frontal power takes out efficient.Also promptly this light-emitting device can be realized the increase of the arrowbandization and the outgoing light quantity of luminescent spectrum.

If double amplitude bandwidth, total light flux taking-up efficient, frontal power take out efficient and compare mutually between the relevant light-emitting device of first～the 3rd variation, then see the material of conductivity semi-reflective layer 17 as can be known as from the angle of the arrowbandization of luminescent spectrum, silver is more preferred than aluminium, and magnesium is more preferred than aluminium.On the other hand, from outgoing light quantity increasing angles, as the material of conductivity semi-reflective layer 17, magnesium is more preferred than aluminium, and silver is more preferred than magnesium.

(second execution mode)

Figure 14 is the cutaway view of the part of the relevant light-emitting device 20 of expression second execution mode of the present invention.But this execution mode and the first execution mode difference are color display.This light-emitting device 20 is the light-emitting device that is suitable for the demonstration of coloured image, has to be configured to rectangular a plurality of pixels on reflection layer 23.Each pixel has one and sends the light-emitting component 22R near red R light, the light-emitting component 22G that sends the G light of approaching green, a light-emitting component 22B who sends near blue B light.More identical than the structure than light-emitting component 12 more close downsides in the structure of light-emitting component 22R, 22G, the more close downside of 22B and the light-emitting device 10, replace reflection layer 13 but also can have reflection layer 23.Reflection layer 23 only is to form this point by aluminium with the difference of reflection layer 13.

Light-emitting component 22R, 22G, 22B have the structure identical with the light-emitting component 12 of light-emitting device 10 respectively.For example light-emitting component 22R constitutes according to the mode by transparency electrode 24R and half reflection electrode 26 clamping luminescent layer 25R, and the formation material of transparency electrode 24R, luminescent layer 25R and half reflection electrode 26 and thickness are identical with transparency electrode 14, luminescent layer 15 and half reflection electrode 16.

Wherein, the luminous dominant wavelength of the luminescent layer 25G of light-emitting component 22G is 550nm, and the luminous dominant wavelength of the luminescent layer 25B of light-emitting component 22B is 480nm.In addition, the thickness of the luminescent layer on the included hole injection layer is respectively 80nm among luminescent layer 25G and the luminescent layer 25B.In addition, according to the mode that roughly satisfies resonance condition, making the thickness of the transparency electrode 24G of light-emitting component 22G is 115nm, and the thickness that makes the transparency electrode 24B of light-emitting component 22B is 60nm.Therefore, as shown in the figure, the top of luminescent layer do not form a plane, and has concavo-convex on half reflection electrode 26.

Than the structure of light-emitting component 22R, 22G, the more close upside of 22B, except having, identical with the structure of the upside of light-emitting component 12 in the light-emitting device 10 along concavo-convex this point of half reflection electrode 26.Be the conductivity semi-reflective layer 27 of the silvery of stacked 10nm thickness on the half reflection electrode 26, stacked thereon transparent auxiliary electrode 28, stacked sealant 29 on transparent auxiliary electrode 28.The formation material of transparent auxiliary electrode 28 and sealant 29 and thickness are identical with transparent auxiliary electrode 18 and sealant 19 in the light-emitting device 10.

Come in the spectrum of emergent light of selfluminous device 20, from light-emitting component 22R radiation and from the spectrum of the R light of light-emitting device 20 outgoing, identical with spectrum shown in Figure 4 (from the spectrum of the emergent light of the light-emitting device relevant) with first variation.Therefore, light-emitting device 20 is realized the arrowbandization of luminescent spectrum and the increase of outgoing light quantity at R light.

Figure 15 for expression from light-emitting component 22G radiation and from the figure of the spectrum of the G light of light-emitting device 20 outgoing.Figure 16 is the figure of the characteristic of the emergent light of expression Figure 15.Shown in above-mentioned figure, the half range value bandwidth of the spectrum of G light is 44.6nm.Below the half range value bandwidth of the spectrum that this half range value bandwidth is the G light in the existing apparatus.In addition, outgoing beam is that total light flux taking-up efficient is 0.231 to the ratio of the global radiation light beam of light-emitting component 22G.The total light flux that this efficient is more relevant than the G light in the existing apparatus takes out the efficient height.Also be that 20 pairs of G light of light-emitting device are realized the arrowbandization of luminescent spectrum and the increase of outgoing light quantity.In addition, as shown in Figure 16,20 pairs of front emergent lights of light-emitting device (G light) are also realized the increase of the arrowbandization and the outgoing light quantity of luminescent spectrum.

Figure 17 for expression from light-emitting component 22B radiation and from the figure of the spectrum of the B light of light-emitting device 20 outgoing.Figure 18 is the figure of the characteristic of the emergent light of expression Figure 17.Shown in above-mentioned figure, the half range value bandwidth of the spectrum of B light is 25.3nm.Below the half range value bandwidth of the spectrum that this half range value bandwidth is the B light in the existing apparatus.In addition, outgoing beam is that total light flux taking-up efficient is 0.095 to the ratio of the global radiation light beam of light-emitting component 22B.The total light flux that this efficient is more relevant than the B light in the existing apparatus takes out the efficient height.Also be that 20 pairs of B light of light-emitting device are realized the arrowbandization of luminescent spectrum and the increase of outgoing light quantity.In addition, as shown in Figure 18,20 pairs of front emergent lights of light-emitting device (B light) are also realized the increase of the arrowbandization and the outgoing light quantity of luminescent spectrum.

Can think that according to above content light-emitting device 20 is all realized the increase of the arrowbandization and the outgoing light quantity of luminescent spectrum for R light, G light, B light.In addition, for light-emitting device 20, also can carry out and the distortion identical the distortion of light-emitting device 10.

Figure 19 and Figure 21 are for representing the figure from the spectrum of the emergent light of the light-emitting device relevant with light-emitting device 20 conventional example (second conventional example) relatively respectively.Figure 19 is the spectrum relevant with G light, and it is based on data shown in Figure 20.Figure 21 is the spectrum relevant with B light, and it is based on data shown in Figure 22.

Second conventional example is the light-emitting device that thickens half reflection electrode 16 and do not need conductivity semi-reflective layer 17 in light-emitting device 20.Specifically, half reflection electrode in the relevant light-emitting device of second conventional example 26 is formed by calcium, and its thickness is 15nm.In this light-emitting device, about G light, the half range value bandwidth of the spectrum of emergent light is 56.2nm, and it is 0.228 that total light flux takes out efficient.The half range value bandwidth of the spectrum of emergent light is 54.2nm, and it is 0.02354 that frontal power takes out efficient.In addition, about B light, the half range value bandwidth of the spectrum of emergent light is 28.7nm, and it is 0.092 that total light flux takes out efficient, and the half range value bandwidth of the spectrum of front emergent light is 27.0nm, and it is 0.01057 that frontal power takes out efficient.

If the numerical value in above-mentioned numerical value and the light-emitting device 20 is compared, then as can be known no matter from the angle of the arrowbandization of luminescent spectrum, still from the viewpoint of the increase of outgoing light quantity, light-emitting device 20 1 sides are excellence all.Hence one can see that, from the arrowbandization of luminescent spectrum and the increasing angles of outgoing light quantity, the structure of the conductivity semi-reflective layer 27 that stacked light reflectivity is higher and light disappearance coefficient is little is better than only being the structure of thicker half reflection electrode 26 on thin half reflection electrode 26, and such tendency does not rely on the luminous dominant wavelength of light-emitting component.

(other distortion)

In above-mentioned various light-emitting devices, adopt organic EL be the OLED element as light-emitting component, but scope of the present invention is not defined in the OLED element, also can use other suitable light-emitting components.As an example of other suitable light-emitting components, can enumerate inorganic EL element.In addition, the trickle part in order to understand the present invention easily to the structure of illustrative light-emitting device describes particularly, and the present invention is not limited to this and adopts other structures also can.

(application)

Above-mentioned various light-emitting device can be applied to various electronic equipments.Relevant various light-emitting devices of light-emitting device 10 and other variation for example can be used as photosurface to the image-carrier of image processing system and carry out light-struck line style exposure device or make each light-emitting component carry out the luminous display unit that shows this image with the pairing brightness of this view data by the supply that reception is used for the view data of display image.As under the situation of exposure device, light-emitting component 12 is arranged in direction with the direct of travel crosscut of the photosurface of image-carrier.As under the situation of display unit, be configured to light-emitting component 12 rectangular.In addition for example, the various light-emitting devices that light-emitting device 20 and variation thereof are relevant can be used as display unit.

(the 3rd execution mode)

Figure 23 is the cutaway view of the part of the relevant light-emitting device 50 of expression the 3rd execution mode of the present invention.This execution mode and the first execution mode difference are, dispose hyaline layer between reflection layer 13 and transparency electrode 14.This light-emitting device 50 has a plurality of light-emitting components 52 of configuration on substrate 51.In the drawings, illustration three light-emitting components 52.Each light-emitting component 52 is OLED (Organic Light Emitting Diode) element for organic EL.Also be that light-emitting device 50 is organic El device.

Substrate 51 is formed by for example glass, and its thickness is for example 500 μ m.On substrate 51, form the reflection layer 53 that light is carried out total reflection.Reflection layer 53 can carry out the resonance of light, and the material higher by light reflectivity forms, and level and smooth above it, its thickness is for example 200nm.The formation material of reflection layer 53 is specially silver, but to present embodiment be out of shape and be aluminium also can, be to comprise that a side of silver or aluminium or two sides' alloy also can.

On reflection layer 53, form the hyaline layer 41 that makes light transmission, on hyaline layer 41, form a plurality of light-emitting components 52.Each light-emitting component 52 has: in the transparency electrode (first electrode) 54 that forms on the reflection layer 53, at the thickness that forms on the transparency electrode 54 is the translucent half reflection electrode (second electrode) 56 of the luminescent layer 55 of 170nm and formation on luminescent layer 55.The electrode of transparency electrode 54 for incident light is seen through, by refractive index is that 1.7 ITO (Indium Tin Oxide) forms, more than the thickness (can guarantee the thickness of the irreducible minimum of conductivity type) of its thickness irreducible minimum that to be transparency electrode 54 can play one's part to the full as electrode, less than 60nm.Because the extinction coefficient of ITO is bigger, therefore should make transparency electrode 54 attenuation for the loss that reduces the light in the resonance described later as far as possible.Therefore, in the present embodiment, the thickness of transparency electrode 54 is made as 30nm.

Hyaline layer 41 by with ITO mutually the specific extinction coefficient materials with smaller form, its thickness is 135nm.The formation material of hyaline layer 41 specifically is that refractive index is 1.49 silicon dioxide, but present embodiment is out of shape and is that 1.87 silicon nitride forms and also can by refractive index.At this moment, the thickness of hyaline layer 41 is 105nm.

Will be through exciting luminous luminescent layer, being layered in to be used for the hole is injected on the hole injection layer of this luminescent layer and forming luminescent layer 55 in conjunction with the exciton that produced again by hole and electronics.Hence one can see that, and in the present embodiment, transparency electrode 54 is an anode, and half reflection electrode 56 is a negative electrode, but present embodiment is out of shape and anode and cathode counter-rotating also can.The thickness of hole injection layer is 50nm, and its refractive index that forms material is for example 1.45.The thickness of the luminescent layer on the hole injection layer is 120nm, and its refractive index that forms material is for example 1.67.In addition, the next door that luminescent layer 55 is divided by every light-emitting component 52 form also can, do not form and can yet.In addition, present embodiment is out of shape, make luminescent layer 55 do not comprise hole injection layer also can, make luminescent layer 55 comprise that hole transporting layer, electron injecting layer or electron supplying layer also can.

Half reflection electrode 56 for the common thickness of all luminescent layer 55 be the electrode of 5nm, cover all luminescent layers 55.In addition, half reflection electrode 56 half-mirror for carrying out the resonance of light makes from a part of light transmission of luminescent layer 55 another part light is reflected.In addition, half reflection electrode 56 is formed by the metal of electronics injection, and its work function is below the 4eV (electron-volt).The formation material of half reflection electrode 56 is specially calcium, also can but formed by lithium, strontium, barium, caesium, ytterbium or samarium with present embodiment distortion and with half reflection electrode 56.

On half reflection electrode 56, be formed with translucent conductivity semi-reflective layer 57.Conductivity semi-reflective layer 57 makes from a part of light transmission of half reflection electrode 56 another part light is reflected, and covers half reflection electrode 56, forms by compare the little metal of the high Bees Wax of light reflectivity with half reflection electrode 56, and its thickness is 8nm.The formation material of conductivity semi-reflective layer 57 is specially silver, also can but present embodiment is out of shape and forms conductivity semi-reflective layer 57 by magnesium, platinum or aluminium.

On conductivity semi-reflective layer 57, form transparent auxiliary electrode 58.The transparency electrode that the conductivity that transparent auxiliary electrode 58 is double reflecting electrode 56 is assisted, and cover conductivity semi-reflective layer 57.Transparent auxiliary electrode 58 is formed by ITO, also can but present embodiment is out of shape and formed by indium-zinc oxide or indium gallium oxide.The thickness of transparent auxiliary electrode 58 is 100nm, at random determines also can in the scope that obtains enough conductivity.In addition, also can with light-emitting component 52 non-overlapping portions in, on transparent auxiliary electrode 58 or replace transparent auxiliary electrode 58 and the metal auxiliary electrode is set.The metal auxiliary electrode is the metal electrode that the conductivity of double reflecting electrode 56 is assisted, and is formed by metal opaque and that conductance is high.

On transparent auxiliary electrode 58, form sealant 59.Sealant 59 is used for protecting all light-emitting components 52 not influenced by extraneous gas, is formed by transparent inorganic material.Therefore, by luminous caused radiant light outgoing of luminescent layer 55 by half reflection electrode 56, conductivity semi-reflective layer 57, transparent auxiliary electrode 58 and sealant 59.On the other hand, owing to have reflection layer 53, so radiant light is not from substrate 51 outgoing.Also be light-emitting device 50 for the light of self-emission device 52 in the future from the light-emitting device of the emission type of the top outgoing of substrate 51 opposite sides.In addition, in the present embodiment, employing forms the film phonograph seal method of sealant 59 by film forming, but also can be out of shape present embodiment, and adopts other known encapsulating method.

It is micro-cavities that each light-emitting component 52 constitutes resonance structure with reflection layer 53, hyaline layer 41 and conductivity semi-reflective layer 57.Therefore, promptly the resonate thickness of each layer in distance (L) and the micro-cavities and refractive index of distance between reflection layer 53 and the conductivity semi-reflective layer 57 is defined as and roughly satisfies resonance condition, and promptly wavelength is that the light of λ comes and goes between reflection layer 53 and conductivity semi-reflective layer 57 that to make wavelength be from the condition of light-emitting device 50 outgoing after the light of λ strengthens.

Specifically, in each micro-cavities, when the optical path length between reflection layer 53 and conductivity semi-reflective layer 57 is made as d, determine L according to the mode of d=3/4 λ.λ is the luminous dominant wavelength of luminescent layer 55, is 630nm specifically.Therefore, determine L according to the roughly consistent mode of d and 3/4630=472.5nm.In addition, above-mentioned conditional (d=3/4 λ) is object with three grades light, and the light in that present embodiment is out of shape with not at the same level time is under the situation of object, and above-mentioned conditional is also different.

Figure 24 for expression from light-emitting component 52 radiation and from the figure of the spectrum of the light (emergent light) of light-emitting device 50 outgoing.Figure 25 is the figure of the characteristic of the emergent light of expression Figure 24.Shown in above-mentioned figure, the half range value bandwidth of the spectrum of emergent light is 49.6nm.This half width is below the half range value bandwidth of spectrum of the emergent light in the light-emitting device (existing apparatus) of existing top outgoing type.It also is the arrowbandization that light-emitting device 50 is realized luminescent spectrum.

In addition, outgoing beam is that total light flux taking-up efficient is 0.299 to the ratio of the global radiation light beam of light-emitting component 52.This efficient is than the efficient height in the existing apparatus.It also is the increase that light-emitting device 50 is realized the outgoing light quantity.In addition, the x value based on the colourity of CIEI931 of emergent light is that CIEI931x is 0.688, and the y value based on the colourity of CIEI931 of emergent light is that CIEI931y is 0.311.

In addition, about in the emergent light, along the light (front emergent light) of advancing for the direction (frontal) in the scopes of ± 15 degree with the angle that normal constituted of exit facet, half width is 48.3nm, and luminous power is that frontal power taking-up efficient is 0.03143 to the ratio of the luminous power of the global radiation light of light-emitting component 52.It also is light-emitting device 50 is also realized the arrowbandization and the outgoing light quantity of luminescent spectrum at the front emergent light increase.

In addition, the aberration of the relative emergent light of advancing along true front of emergent light (front edge emergent light) (real face emergent light) of advancing at the edge of above-mentioned ± 15 degree scopes is that true edge aberration is 0.005.This is very little value, and the colourity of expression emergent light not too depends on looks into the distance direction.In addition, true edge aberration is the positive square root of quadratic power sum of the difference of the quadratic power of difference of the CIE1931x between real face emergent light and the front edge emergent light and the CIE1931y between real face emergent light and the front edge emergent light.

Figure 26 comes the figure of spectrum of the emergent light of the relevant light-emitting device of the variation (the 4th variation) of selfluminous device 50 for expression.Figure 27 is the figure of the characteristic of the emergent light of expression Figure 26.In this light-emitting device, the thickness of half reflection electrode 56 is made as 15nm replaces not comprising conductivity semi-reflective layer 57.In this light-emitting device, the half range value bandwidth of the spectrum of emergent light is 57.4nm, and it is 0.272 that total light flux takes out efficient.In addition, about the front emergent light, half width is 55.4nm, and it is 0.02709 that the power of frontal takes out efficient.Also promptly this light-emitting device is realized the arrowbandization of luminescent spectrum and the increase of outgoing light quantity.

Between light-emitting device 50 and the light-emitting device relevant with the 4th variation, double amplitude bandwidth, total light flux taking-up efficient, frontal power take out efficient and compare, can be clearly from the viewpoint of the increase of the arrowbandization of luminescent spectrum and outgoing light quantity, with 56 attenuation of half reflection electrode and must have conductivity semi-reflective layer 57 1 sides than thickening half reflection electrode 56 and not needing conductivity semi-reflective layer 57 1 sides preferred.

Figure 28 comes the figure of spectrum of the emergent light of the relevant light-emitting device of other the variation (the 5th variation) of difference of selfluminous device 50 for expression.Figure 29 is the figure of the characteristic of the emergent light of expression Figure 28.The reflection layer 53 of this light-emitting device is formed by aluminium.In this light-emitting device, the half range value bandwidth of the spectrum of emergent light is 51.3nm, and it is 0.224 that total light flux takes out efficient.In addition, for the front emergent light, half range value bandwidth is 49.6nm, and it is 0.02593 that frontal power takes out efficient.Also promptly this light-emitting device is realized the arrowbandization of luminescent spectrum and the increase of outgoing light quantity.

If between the light-emitting device that light-emitting device 50 is correlated with the 5th variation, half width, total light flux taking-up efficient, frontal power are taken out efficient and compare, then as can be known from the arrowbandization of luminescent spectrum and the increasing angles of outgoing light quantity, as the formation material of reflection layer 53, silver is more preferred than aluminium.On the other hand, from the angle of the easiness of light-emitting device manufacturing, aluminum ratio silver is preferred.

Figure 30 comes the figure of spectrum of the emergent light of the relevant light-emitting device of another other variation (the 6th variation) of selfluminous device 50 for expression.Figure 31 is the figure of the characteristic of the emergent light of expression Figure 30.In this light-emitting device, reflection layer 53 is formed by aluminium, and hyaline layer 41 is formed by silicon nitride.The thickness of hyaline layer 41 is 105nm.In this light-emitting device, the half range value bandwidth of the spectrum of emergent light is 55.2nm, and it is 0.281 that total light flux takes out efficient.In addition, about the front emergent light, half range value bandwidth is 53.8nm, and it is 0.02516 that frontal power takes out efficient.Also promptly this light-emitting device is realized the arrowbandization of luminescent spectrum and the increase of outgoing light quantity.

If half range value bandwidth relatively between the 5th variation and the 6th variation is then as can be known from the angle of the arrowbandization of luminescent spectrum, preferred than silicon nitride as the formation material silicon dioxide of hyaline layer 41.In addition, take out efficient for total light flux, preferred silicon nitride takes out efficient for frontal power, preferred silicon dioxide.

Figure 32 is the figure of expression from the spectrum of the emergent light of the relevant light-emitting device of the conventional example (the 3rd conventional example) of comparing with the light-emitting device of light-emitting device 50 or each variation.Figure 33 is the figure of the characteristic of the emergent light of expression Figure 32.The 3rd conventional example is in the relevant light-emitting device of the 4th variation, forms reflection layer 53 by aluminium, thickens transparency electrode 54 and does not need the example of hyaline layer 41.The thickness of transparency electrode 54 is 125nm.

In the relevant light-emitting device of the 3rd conventional example, the half range value bandwidth of the spectrum of emergent light is 60.6nm, and it is 0.202 that total light flux takes out efficient.In addition, about the front emergent light, half range value bandwidth is 59.0nm, and it is 0.01923 that frontal power takes out efficient.If the numerical value in each light-emitting device that above-mentioned numerical value is relevant with light-emitting device 50 or other variation is compared, still be the increasing angles of outgoing light quantity from the angle of the arrowbandization of luminescent spectrum no matter as can be known then, relevant each light-emitting device one side of light-emitting device 50 or its variation is excellence all.According to foregoing, from the arrowbandization of luminescent spectrum and the increasing angles of outgoing light quantity, we can say that structure one side who makes transparency electrode 54 attenuation and must extinction coefficient less hyaline layer 41 is better than structure one side who makes transparency electrode 54 thickenings and do not need hyaline layer 41.

In addition, from the angle of the arrowbandization of luminescent spectrum, as the material of conductivity semi-reflective layer 57, aluminum ratio silver is preferred, and magnesium is more preferred than aluminium.On the other hand, from outgoing light quantity increasing angles, as the material of conductivity semi-reflective layer 57, magnesium is more preferred than aluminium, and silver is more preferred than magnesium.In addition, when the formation material of reflection layer 53 is magnesium, also can obtain above-mentioned various effect.

(the 4th execution mode)

Figure 34 is the cutaway view of the part of the relevant light-emitting device 60 of expression the 4th execution mode of the present invention.This execution mode and the 3rd execution mode difference are, but the structure this point of employing color display.This light-emitting device 60 is configured to rectangular a plurality of pixels for being suitable for the light-emitting device of color display, having on hyaline layer 42.Each pixel has one and sends the light-emitting component 62R near red R light, the light-emitting component 62G that sends the G light of approaching green, a light-emitting component 62B who sends near blue B light.More identical than the structure than hyaline layer 41 more close downsides in the structure of hyaline layer 42 more close downsides and the light-emitting device 50.

Hyaline layer 42 is variable thickness sample this point with hyaline layer 41 differences of light-emitting device 50.The thickness of hyaline layer 42 is 130nm at the downside of light-emitting component 62R, be 135nm at the downside of light-emitting component 62G, be 35nm at the downside of light-emitting component 62B.The formation of the layer that thickness is different for example can be divided into repeatedly by the film forming with same material to be carried out realizing.

Light-emitting component 62R, 62G, 62B have the structure identical with the light-emitting component 52 of light-emitting device 50 respectively.For example light-emitting component 62R constitutes according to the mode of clamping luminescent layer 65R between transparency electrode 64R and half reflection electrode 66, and the formation material of transparency electrode 64R, luminescent layer 65R and half reflection electrode 66 and thickness are identical with transparency electrode 54, luminescent layer 55 and half reflection electrode 56.

Wherein, the luminous dominant wavelength of the luminescent layer 65G of light-emitting component 62G is 550nm, and the luminous dominant wavelength of the luminescent layer 65B of light-emitting component 62B is 480nm.In addition, the thickness of the luminescent layer on the included hole injection layer is respectively 80nm among luminescent layer 65G and the luminescent layer 65B.In addition, the thickness of transparency electrode 64G and 64B is respectively 30nm.Therefore, as shown in the figure, the top of luminescent layer 65R, 65G and 65B do not form a plane, and has concavo-convex on half reflection electrode 66.

Than the structure of light-emitting component 62R, 62G, the more close upside of 62B, except having, roughly the same with the structure of the upside of light-emitting component 52 in the light-emitting device 50 along the concavo-convex this point of half reflection electrode 66.The i.e. conductivity semi-reflective layer 67 of stacked silvery on half reflection electrode 66, stacked thereon transparent auxiliary electrode 68, stacked sealant 69 on transparent auxiliary electrode 68.The formation material of transparent auxiliary electrode 68 and sealant 69 and thickness are identical with transparent auxiliary electrode 58 and sealant 59 in the light-emitting device 50.The thickness of conductivity semi-reflective layer 67 is 8nm at the upside of light-emitting component 62R, be 15nm at the upside of light-emitting component 62G, be 18nm at the upside of light-emitting component 62B.

Come in the spectrum of emergent light of selfluminous device 60, from light-emitting component 62R radiation and from the spectrum of the R light of light-emitting device 60 outgoing, (coming the spectrum of the emergent light of selfluminous device 50) is identical with the spectrum shown in Figure 24.Therefore, light-emitting device 60 is realized the arrowbandization of luminescent spectrum and the increase of outgoing light quantity at R light.

Figure 35 for expression from light-emitting component 62G radiation and from the figure of the spectrum of the G light of light-emitting device 60 outgoing.Figure 36 is the figure of the characteristic of the emergent light of expression Figure 35.Shown in above-mentioned figure, the half range value bandwidth of the spectrum of G light is 30.9nm.Below the half range value bandwidth of the spectrum that this half range value bandwidth is the G light in the existing apparatus.In addition, outgoing beam is that total light flux taking-up efficient is 0.311 to the ratio of the global radiation light beam of light-emitting component 62G.The total light flux that this efficient is more relevant than the G light in the existing apparatus takes out the efficient height.Also be that light-emitting device 60 is realized the arrowbandization of luminescent spectrum and the increase of outgoing light quantity at G light.In addition, as shown in Figure 36, light-emitting device 60 is realized the arrowbandization of luminescent spectrum and the increase of outgoing light quantity at front emergent light (G light).

Figure 37 for expression from light-emitting component 62B radiation and from the figure of the spectrum of the B light of light-emitting device 60 outgoing.Figure 38 is the figure of the characteristic of the emergent light of expression Figure 37.Shown in above-mentioned figure, the half range value bandwidth of the spectrum of B light is 17.8nm.Below the half range value bandwidth of the spectrum that this half range value bandwidth is the B light in the existing apparatus.In addition, outgoing beam is that total light flux taking-up efficient is 0.123 to the ratio of the global radiation light beam of light-emitting component 62B.The total light flux that this efficient is more relevant than the B light in the existing apparatus takes out the efficient height.Also be that light-emitting device 60 is realized the arrowbandization of luminescent spectrum and the increase of outgoing light quantity at B light.In addition, according to Figure 38 as can be known, light-emitting device 60 is realized the arrowbandization of luminescent spectrum and the increase of outgoing light quantity at front emergent light (B light).

We can say that according to above content light-emitting device 60 is all realized the increase of the arrowbandization and the outgoing light quantity of luminescent spectrum at R light, G light, B light.In addition, for light-emitting device 60, also can carry out and the distortion identical the distortion of light-emitting device 50.

Figure 39 comes the figure of spectrum of the emergent light (G light) of the relevant light-emitting device of the variation (the 7th variation) of selfluminous device 60 for expression.Figure 40 is the figure of the characteristic of the emergent light of expression Figure 39.In this light-emitting device, the thickness of half reflection electrode 66 is made as 22nm replaces not having conductivity semi-reflective layer 67.In this light-emitting device, the half range value bandwidth of the spectrum of G light is 47.9nm, and it is 0.296 that total light flux takes out efficient.In addition, about the front emergent light, half width is 47.4nm, and it is 0.03157 that frontal power takes out efficient.Also promptly this light-emitting device is realized the arrowbandization of luminescent spectrum and the increase of outgoing light quantity.According to foregoing, from the arrowbandization of luminescent spectrum and the increasing angles of outgoing light quantity, we can say to make 66 attenuation of half reflection electrode and a side that must conductivity semi-reflective layer 67 than making half reflection electrode 66 thickenings and not needing a side of conductivity semi-reflective layer 67 preferred, such tendency does not rely on the luminous dominant wavelength of light-emitting component.

Figure 41 and Figure 43 are respectively the figure of spectrum that expression comes the emergent light of the relevant light-emitting device of the variation (the 8th variation) of selfluminous device 60.The spectrum of Figure 41 is the spectrum of the G light of the characteristic shown in Figure 42, and the spectrum of Figure 43 is the spectrum of the B light of characteristic shown in Figure 44.In this light-emitting device, reflection layer 63 is formed by aluminium, and the thickness of half reflection electrode 66 is 22nm at the upside of luminescent layer 65G, is 17nm at the upside of luminescent layer 65B, does not need conductivity semi-reflective layer 67.

In this light-emitting device, for G light, half range value bandwidth is 49.9nm, and it is 0.225 that total light flux takes out efficient, and about as its a part of front emergent light, half range value bandwidth is 47.6nm, and it is 0.02718 that frontal power takes out efficient.In addition, for B light, half range value bandwidth is 25.1nm, and it is 0.065 that total light flux takes out efficient, and about as its a part of front emergent light, half range value bandwidth is 24.6nm, and it is 0.00963 that frontal power takes out efficient.Also promptly this light-emitting device is realized the arrowbandization of luminescent spectrum and the increase of outgoing light quantity at G light and B light.

Figure 45 and Figure 47 represent the figure from the spectrum of the emergent light of the relevant light-emitting device of the conventional example (the 4th conventional example) of comparing with light-emitting device 60 respectively.The spectrum of Figure 45 is the G light of the characteristic shown in Figure 46, and the spectrum of Figure 47 is the spectrum of the B light of the characteristic shown in Figure 48.The 4th conventional example, from the relevant light-emitting device of the 8th variation, remove hyaline layer 42, according to satisfying resonance condition about the thickness of the relevant micro-cavities of light-emitting component 62G by suitable setting transparency electrode 64G, satisfy the mode of resonance condition by the thickness of suitable setting transparency electrode 64B, the thickness of half reflection electrode 66 is made as 15nm about the relevant micro-cavities of light-emitting component 62B.The thickness of transparency electrode 64G is 115nm, and the thickness of transparency electrode 64B is 60nm.

In this light-emitting device, for G light, the half range value bandwidth of the spectrum of emergent light is 56.2nm, and it is 0.228 that total light flux takes out efficient, and the half range value bandwidth of the spectrum of front emergent light is 54.2nm, and it is 0.02354 that frontal power takes out efficient.In addition, for B light, the half range value bandwidth of the spectrum of emergent light is 28.7nm, and it is 0.092 that total light flux takes out efficient, and the half range value bandwidth of the spectrum of front emergent light is 27.0nm, and it is 0.01057 that frontal power takes out efficient.

If the numerical value in the light-emitting device that these numerical value are relevant with light-emitting device 60 or the 7th variation compares, still be the increasing angles of outgoing light quantity from the angle of the arrowbandization of luminescent spectrum no matter as can be known then, relevant light-emitting device one side of light-emitting device 60 or the 7th variation is excellence all.In addition, if the numerical value in the light-emitting device that these numerical value are relevant with the 8th embodiment compares, then as can be known from the angle of the arrowbandization of luminescent spectrum, the light-emitting device one side excellence that the 8th variation is relevant.In addition, if be limited to the frontal of G light, then no matter from the angle of the arrowbandization of luminescent spectrum, or the increasing angles of outgoing light quantity, light-emitting device one side that the 8th embodiment is correlated with is all excellent.

(other distortion)

In above-mentioned various light-emitting devices, adopt organic EL be the OLED element as light-emitting component, but do not limit the scope of the invention to the intention of OLED element, also can use other suitable light-emitting components.As other a example of suitable light-emitting component, can enumerate inorganic EL element.In addition, understand easily, and the trickle part of the structure of illustrative light-emitting device is specifically described, but the present invention is not defined in this intention, also can be other structures in order to make the present invention.

(application)

Above-mentioned various light-emitting devices can be applied to various electronic equipments.Relevant various light-emitting devices of light-emitting device 50 and variation thereof for example make each light-emitting component with the luminous display unit that shows this image of the pairing brightness of this view data thereby can be used as the supply that photosurface to the image-carrier of image processing system carries out light-struck line style exposure device or the view data by receiving display image.As under the situation of exposure device, light-emitting component 52 is arranged in direction with the direct of travel crosscut of the photosurface of image-carrier.As under the situation of display unit, be configured to light-emitting component 52 rectangular.In addition for example, the various light-emitting devices that light-emitting device 60 and variation thereof are relevant can be used as display unit.

[image processing system]

Figure 49 is for representing the longitudinal section of light-emitting device 10 as an example of the image processing system of exposure device.This image processing system is to utilize the coloured image of the tandem type of intermediate transfer medium band (belt intermediate transfermedium) mode to form device.

At this image processing system, will be configured in the exposure position of four photoconductor drums (image-carrier) 110K with spline structure, 110C, 110M, 110Y respectively with four exposure device 10K, 10C, 10M, the 10Y of spline structure.Exposure device 10K, 10C, 10M, 10Y are above-mentioned light-emitting device 10 or light-emitting device 50.

As shown in the drawing, in this image processing system, be provided with driven roller 121 and driven voller 122, in these rollers 121,122, be wound with intermediate duplication band 120 for no reason, rotation around roller 121,122 as shown by arrows.Though not shown, tension force from the jockey pulley (tension roller) etc. of tension force to intermediate duplication band 120 that pay also can be set pay mechanism.

Around this intermediate duplication band 120, four photoconductor drum 110K, 110C, 110M, 110Y that have photosensitive layer at outer peripheral face of spaced-apart predetermined distance configuration.That the K of apposition, C, M, Y mean respectively is black in order to form, blue-green, magenta, yellow and use.About other parts too.The driving of photoconductor drum 110K, 110C, 110M, 110Y and intermediate duplication band 120 synchronously is driven in rotation.

Around each photoconductor drum 110 (K, C, M, Y), dispose corona charging device 111 (K, C, M, Y), exposure device 10 (K, C, M, Y), developer 114 (K, C, M, Y).Corona charging device 111 (K, C, M, Y) makes the outer peripheral face of pairing photoconductor drum 110 (K, C, M, Y) charged equably.Exposure device 10 (K, C, M, Y) writes electrostatic latent image at the charged outer peripheral face of photoconductor drum.Each exposure device 10 (K, C, M, Y) is provided with according to the orientation of a plurality of EL element mode along the bus (main scanning direction) of photoconductor drum 110 (K, C, M, Y).Writing by above-mentioned a plurality of EL element of electrostatic latent image carried out to the photoconductor drum irradiates light.Developer 114 (K, C, M, Y) is being paid at electrostatic latent image and is formed video picture at photoconductor drum and get final product video by making as the toner of developer.

Form each video picture of the formed black of platform (station), blue-green, magenta, yellow by the monochrome presentation of this four looks, thereby by being applied once being duplicated on intermediate duplication band 120 successively on the intermediate duplication band 120, its result obtains colored video picture.Dispose four in the inboard of intermediate duplication band 120 and once duplicate corona tube (reproducer) 112 (K, C, M, Y).Once duplicate corona tube 112 (K, C, M, Y) be configured in respectively photoconductor drum 110 (K, C, M, Y) near, by attracting video picture statically, and be replicated in video picture by photoconductor drum and once duplicate intermediate duplication band 120 between the corona tube by photoconductor drum 110 (K, C, M, Y).

As the sheet material (sheet) 102 of the object of final formation image, be fed one by one from giving carton 101 by pick-up roller 103, send to the intermediate duplication band 120 that contacts with driven roller 121 and secondary and duplicate in the roll gap between the roller 126.Colorful visualization on the intermediate duplication band 120 duplicates roller 126 by secondary and is replicated on the one side of sheet material 102 by secondary in the lump, by as the fixing roller of photographic fixing portion to 127 by photographic fixing on sheet material 102.Afterwards, sheet material 102 is discharged on the row's carton that is formed on device top 128 by exit roller.

Figure 50 for expression with the longitudinal section of light-emitting device 10 or light-emitting device 50 as an example of other image processing systems of line style exposure device.This image processing system is to utilize the coloured image of the rotation developing formula of intermediate transfer medium band mode to form device.

In the image processing system shown in this figure, around photoconductor drum (image-carrier) 165, be provided with corona charging device 168, revolving developing cell 161, exposure device 167, intermediate duplication band 169.

Corona charging device 168 makes the outer peripheral face of photoconductor drum 165 charged equably.Exposure device 167 writes electrostatic latent image on the charged outer peripheral face of photoconductor drum 165.Exposure device 167 is above-mentioned light-emitting device 10 or light-emitting device 50, is set up according to the orientation of a plurality of EL element mode along the bus (main scanning direction) of photoconductor drum 165.The writing of electrostatic latent image light shines photoconductor drum by above-mentioned a plurality of EL element and carries out.

Developing cell 161 drum that to be four developer 163Y, 163C, 163M, 163K dispose according to the mode of the angular spacings that separate 90 degree is that the center can be along being rotated counterclockwise with axle 161a.Developer 163Y, 163C, 163M, 163K be respectively with the toner supply photoconductor drum 165 of yellow, blue-green, magenta, black, and form video pictures at electrostatic latent image at photoconductor drum 165 and get final product video by paying as the toner of developer.

For no reason intermediate duplication band 169 is wrapped in driven roller 170a, driven voller 170b, once duplicates roller 166 and jockey pulley, rotates along the direction shown in the arrow around these rollers.Once duplicating roller 166 is replicated in video picture by photoconductor drum by attracting video picture statically from photoconductor drum 165 and once duplicates intermediate duplication band 169 between the roller 166.

Specifically, in the initial once rotation of photoconductor drum 165, by exposure device 167 write be used for yellow (Y) as electrostatic latent image and form homochromy video picture by developer 163Y, and then be replicated in intermediate duplication band 169.In addition, in rotation next time, by exposure device 167 write be used for bluish-green (C) as electrostatic latent image and form homochromy video picture by developer 163C, and then be replicated in intermediate duplication band 169 according to the mode that is superimposed in the yellow video picture.Afterwards, as above like that photoconductor drum 165 carry out four rotations during, the video picture of yellow, blue-green, magenta, black is superimposed upon on the intermediate duplication band 169 successively, its result is formed on the video picture of colour on the intermediate duplication band 169.On two faces of the sheet material of the final object that forms image, form under the situation of image, with the homochromy video picture in the replicated surfaces and the back side on intermediate duplication band 169, next the form of the video picture of the next color at the replicated surfaces and the back side on intermediate duplication band 169 obtains colored video picture on intermediate duplication band 169.

In image processing system, be provided with the sheet material transmission path 174 that sheet material is passed through.Sheet material is advanced along sheet material transmission path 174 by transfer roller by from taken out for carton 178 one by one by pick-up roller 179, thereby duplicates roll gap between the roller 171 by the intermediate duplication band 169 that contacts with driven roller 170a and secondary.Secondary duplicates roller 171 by from middle dubs 169 electrostatic attraction colorful visualization together, and duplicates video picture on the single face of sheet material.Secondary duplicate roller 171 by not shown clutch (clutch) with intermediate duplication band 169 near or be spaced.And secondary duplicates roller 171 and intermediate duplication band 169 butts when duplicating colored video picture to sheet material, duplicates roller 171 with secondary during the video picture that superposes and separate in intermediate duplication band 169.

As mentioned above, the sheet material that has duplicated image is transported to fuser 172, makes this sheet material by between the warm-up mill 172a and backer roll 172b of fuser 172, and makes the display lock on the sheet material.Sheet material after photographic fixing is handled is introduced into exit roller and advances in the direction of arrow F to 176.Under the situation of printed on both sides, the major part of sheet material by exit roller to 176 after, make exit roller to 176 along opposite spin, as shown by arrow G, be directed to printed on both sides with transmission path 175.And video picture is duplicated the another side that roller 171 is copied to sheet material by secondary, after being carried out photographic fixing and handled by fuser 172 once more, discharges sheet materials by exit roller to 176.

More than, image processing system has been carried out illustration, but light-emitting device 10 and light-emitting device 50 can be applicable to also in the image processing system of other electrofax modes.For example also can be applicable to not use the intermediate duplication band and directly video picture is copied to the image processing system of the type of sheet material, the image processing system that forms black and white image, the image processing system of employing photoconductor drum as image-carrier from photoconductor drum.Application same as described above also can be used for the various light-emitting devices that the variation of light-emitting device 10 or light-emitting device 50 is relevant.

[display unit]

Figure 51 is for representing employing light-emitting device 20 or light-emitting device 60 figure as the structure of the mobile model personal computer of display unit.Personal computer 2000 possesses as the light-emitting device 20 of display unit or light-emitting device 60 and main part 2010.Be provided with mains switch 2001 and keyboard 2002 in the main part 2010.

Figure 52 is for representing employing light-emitting device 20 or light-emitting device 60 figure as the structure of the portable telephone of display unit.Portable telephone 3000 possesses a plurality of operation 1 keys 3001, scroll key 3002 and as the light-emitting device 20 or the light-emitting device 60 of display unit.By scroll key 3002 is operated, and make the picture rolling that is presented on light-emitting device 20 or the light-emitting device 60.

Figure 53 is for representing employing light-emitting device 20 or light-emitting device 60 figure as the structure of carrying information terminal (PDA:Personal Digital Assistant) of display unit.Information carried terminal 4000 possesses a plurality of operation keyss 4001, mains switch 4002 and as the light-emitting device 20 or the light-emitting device 60 of display unit.If mains switch 4002 is operated, then the various information with address list or schedule are presented at light-emitting device 20 or light-emitting device 60.

In addition, as suitable light-emitting device 20 or the display unit of light-emitting device 60 or electronic equipment with this display unit, except Figure 51 to the equipment shown in Figure 53, also can enumerate digital camera, television set, video camera, automobile navigation apparatus, beep-pager, electronic notebook, Electronic Paper, electronic calculator, word processor, work station, video telephone, POS terminal, printer, scanner, photocopier, video player, possess the equipment of touch-screen etc.Application same as described above also can be used the various light-emitting devices relevant with the variation of light-emitting device 20,60, light-emitting device 10,50, the various light-emitting devices relevant with the variation of light-emitting device 10,50.In addition, by adopting colour filter and color conversion layer, also can be in light-emitting device 10,50 and the application various light-emitting devices relevant with the variation of light-emitting device 10,50, color display.

Claims (13)

1, a kind of light-emitting device possesses:

Substrate;

Reflection layer is formed on the aforesaid substrate and to light and reflects;

First electrode is formed on the above-mentioned reflection layer and makes light transmission;

Luminescent layer is formed on above-mentioned first electrode also luminous;

Second electrode is formed on the above-mentioned luminescent layer, and makes from a part of light transmission of above-mentioned luminescent layer and another part light is reflected; With

The conductivity semi-reflective layer is formed on above-mentioned second electrode, and makes from a part of light transmission of above-mentioned second electrode and another part light is reflected,

The work function of above-mentioned second electrode is below 4 electron-volts,

Above-mentioned conductivity semi-reflective layer is formed than the high metal material of above-mentioned second electrode by light reflectivity.

2, light-emitting device according to claim 1 is characterized in that,

Include silver, magnesium or aluminium in the above-mentioned metal material.

3, light-emitting device according to claim 1 is characterized in that,

Include silver, magnesium or aluminium in the formation material of above-mentioned reflection layer.

4, a kind of light-emitting device possesses:

Substrate;

The reflector is formed on the aforesaid substrate and to light and reflects;

Hyaline layer is formed on the above-mentioned reflector and makes light transmission;

First electrode is formed on the above-mentioned hyaline layer and makes light transmission;

Luminescent layer is formed on above-mentioned first electrode also luminous; With

Second electrode is formed on the above-mentioned luminescent layer, and makes from a part of light transmission of above-mentioned luminescent layer and another part light is reflected,

Above-mentioned hyaline layer is formed by the little material of above-mentioned first electrode of extinction coefficient ratio,

The work function of above-mentioned second electrode is below 4 electron-volts.

5, light-emitting device according to claim 4 is characterized in that,

The formation material of above-mentioned hyaline layer is silicon dioxide or silicon nitride.

6, light-emitting device according to claim 4 is characterized in that,

Include silver, magnesium or aluminium in the formation material in above-mentioned reflector.

7, light-emitting device according to claim 4 is characterized in that,

The thickness of above-mentioned first electrode is less than 60 nanometers,

Satisfy the mode of the relation of regulation according to the luminous dominant wavelength of above-mentioned reflector and above-mentioned second distance between electrodes and above-mentioned luminescent layer, set a side or two sides' of above-mentioned hyaline layer and above-mentioned luminescent layer thickness.

8, light-emitting device according to claim 4 is characterized in that,

Also possess the conductivity reflector, be formed on above-mentioned second electrode, and make from a part of light transmission of above-mentioned second electrode and another part light is reflected,

Above-mentioned conductivity semi-reflective layer is formed than the high metal material of above-mentioned second electrode by light reflectivity.

9, light-emitting device according to claim 8 is characterized in that,

Include silver, magnesium or aluminium in the formation material of above-mentioned conductivity semi-reflective layer.

10, light-emitting device according to claim 8 is characterized in that,

The thickness of above-mentioned first electrode is less than 60 nanometers,

Satisfy the mode of the relation of regulation according to the luminous dominant wavelength of distance between above-mentioned reflector and the above-mentioned conductivity semi-reflective layer and above-mentioned luminescent layer, set at least one the thickness in above-mentioned hyaline layer, above-mentioned luminescent layer and the above-mentioned conductivity semi-reflective layer.

11, a kind of image processing system,

Possess: each described light-emitting device and image-carrier in the claim 1～10,

Make above-mentioned image-carrier charged, the charged face irradiation of above-mentioned image-carrier is formed sub-image from the light of above-mentioned light-emitting device, and make toner form video picture, and above-mentioned video picture is copied to other objects attached to above-mentioned sub-image.

12, a kind of display unit,

Possess each described light-emitting device in the claim 1～10,

Acceptance be used for display image view data supply and make above-mentioned luminescent layer luminous with the pairing brightness of this view data, show this image thus.

13, a kind of electronic equipment,

Possesses each described light-emitting device in the claim 1～10.

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