JP5411469B2 - LIGHT EMITTING DEVICE AND ELECTRONIC DEVICE - Google Patents

Description

  The present invention relates to a light-emitting device using various light-emitting elements, an electronic device including such a light-emitting device, and a method for manufacturing the light-emitting device.

  In recent years, various light-emitting devices using light-emitting elements such as organic light emitting diode (hereinafter referred to as “OLED”) elements called organic EL (electroluminescent) elements and light-emitting polymer elements have been proposed. A light emitting element used for this type of light emitting device generally has a structure in which a light emitting layer formed of an organic EL material or the like is sandwiched between two electrodes.

For example, Patent Document 1 discloses a light-emitting element including an anode, an organic light-emitting medium formed on the anode, and a cathode formed on the organic light-emitting medium. In Patent Document 1, a region in contact with the anode of the organic light emitting medium functions as a hole transport region, while a region in contact with the cathode functions as an electron transport region. In Patent Document 1, the cathode is made of MgAg (magnesium silver alloy), and the composition is Mg: Ag = 10: 1.
Japanese Patent No. 2723242

  Here, an anode is formed on the substrate, an organic light emitting medium is formed on the anode, a cathode is formed on the organic light emitting medium, and light emitted from the organic light emitting medium is emitted from the cathode side opposite to the substrate. When adopting the extraction structure (top emission), since the cathode is required to have high permeability, it is desirable to make the film thickness as thin as possible. However, when the thickness of the cathode in the configuration of Patent Document 1 is reduced, the resistance value is inversely proportional to the thickness, and thus shows a significantly high value. For this reason, there existed a problem that the electroconductivity of a light emitting element will deteriorate.

  In view of such circumstances, an object of the present invention is to solve the problem of suppressing deterioration of conductivity of a light emitting element in a top emission type light emitting device.

In order to solve the above problems, a light emitting device according to the present invention is formed on a substrate, a light reflecting layer formed on the substrate, a first electrode formed on the light reflecting layer, and the first electrode. A light emitting functional layer, an electron injection layer formed on the light emitting functional layer, and a second electrode formed on the electron injection layer and having transflective properties. The second electrode is made of an Ag alloy. The Ag content is such that the Ag ratio is 50 atomic% or more and 98 atomic% or less.
According to this configuration, by using the electron injection layer and setting the Ag ratio range within the above range, the electron injection property is improved and the light emission efficiency is improved.
The light emitting device according to the present invention includes a substrate, a light reflecting layer formed on the substrate, a first electrode formed on the light reflecting layer, a light emitting functional layer formed on the first electrode, An electron injecting layer formed on the light emitting functional layer; and a second electrode formed on the electron injecting layer and having transflective properties. The second electrode is made of an Ag alloy and contains Ag. The quantity is set so that the resistivity of the second electrode is 31 × 10 ⁻⁸ Ω · m or less.

In the present invention, the second electrode is formed of an Ag alloy, and the Ag content is set so that the resistivity of the second electrode is 31 × 10 ⁻⁸ Ω · m or less. There is an advantage that deterioration of conductivity can be suppressed.

  In the light emitting device according to the present invention, the second electrode may be an alloy of any metal of Mg, Cu, Zn, Pd, Nd, and Al and Ag. More specifically, the second electrode may be MgAg.

Moreover, as a light-emitting device according to the present invention, the electron injection layer can be in an aspect made of any one of LiF, Li ₂ O, Liq, MgO, and CaF ₂ . More specifically, the electron injection layer can be in a form of LiF.

  Here, since the electron injection layer is formed of an insulating material, when the film thickness is large, the value of the voltage (driving voltage) applied to the light emitting element when the light emitting element emits light increases. In order to suppress an increase in the value of the driving voltage, the thickness of the electron injection layer is preferably in the range of 0.5 nm to 2 nm.

  The light emitting device according to the present invention is used in various electronic devices. A typical example of this electronic device is a device that uses a light emitting device as a display device. Examples of this type of device include personal computers and mobile phones.

  The method for manufacturing a light emitting device according to the present invention includes a step of forming the light reflecting layer on a substrate, a step of forming a first electrode on the light reflecting layer, and a step of forming a light emitting functional layer on the first electrode. And a step of forming an electron injection layer on the light emitting functional layer and a step of forming a second electrode on the electron injection layer. In the step of forming the second electrode on the electron injection layer, Mg, Cu , Zn, Pd, Nd, Al, and Ag are co-evaporated on the electron injection layer to form the second electrode.

More specifically, in the step of forming the second electrode on the electron injection layer, the vapor deposition rate ratio between the metal and Ag may be in the range of 2: 1 to 1:50. According to this aspect, since it can be manufactured so that the resistivity of the second electrode is 31 × 10 ⁻⁸ Ω · m or less, there is an advantage that deterioration of the conductivity of the light emitting element can be suppressed.

Hereinafter, various embodiments according to the present invention will be described with reference to the accompanying drawings. In the drawings, the ratio of dimensions of each part is appropriately changed from the actual one.
<A: First Embodiment>
<A-1: Structure of light emitting device>
FIG. 1 is a cross-sectional view showing a structure of a light emitting device D1 according to the first embodiment of the present invention. As shown in FIG. 1, the light emitting device D <b> 1 has a configuration in which a plurality of light emitting elements U (Ur, Ug, Ub) are arranged on the surface of the first substrate 10. Each light emitting element U is an element that generates light having a wavelength corresponding to one of a plurality of colors (red, green, and blue). In each of these elements, the light emitting functional layer is common, and by adjusting the optical length sandwiched between the reflective layer described later and the counter electrode having semi-reflectivity by each light emitting element, each resonance phenomenon is optimized, The emission wavelength corresponding to the light emitting element is extracted. In the present embodiment, due to the resonance effect described above, the light emitting element Ur emits red light, the light emitting element Ug emits green light, and the light emitting element Ub emits blue light. The light emitting device D <b> 1 in the present embodiment is a top emission type in which light generated in each light emitting element U is emitted toward the side opposite to the first substrate 10. Therefore, an opaque plate material such as a ceramic or metal sheet as well as a light-transmitting plate material such as glass can be used as the first substrate 10.

  Although wiring for supplying light to the light emitting element U to emit light is arranged on the first substrate 10, illustration of the wiring is omitted. In addition, although a circuit for supplying power to the light emitting element U is disposed on the first substrate 10, illustration of the circuit is omitted.

  As shown in FIG. 1, partition walls 12 (separators) are formed on the first substrate 10. The partition wall 12 divides the space on the surface of the first substrate 10 for each light emitting element U, and is formed of an insulating transparent material such as acrylic or polyimide.

  Each of the plurality of light emitting elements U includes a light reflecting layer 14, a pixel electrode 16 (first electrode), a light emitting functional layer 18, an electron injection layer 20, and a counter electrode 22 (second electrode). As shown in FIG. 1, a plurality of light reflecting layers 14 are formed on the first substrate 10. These light reflecting layers 14 are arranged corresponding to the respective light emitting elements U. Each light reflecting layer 14 is formed of a material having light reflectivity. As this type of material, for example, a simple metal such as aluminum or silver, or an alloy mainly composed of aluminum or silver is preferably employed. In the present embodiment, the trade name “APC” (silver alloy) manufactured by Furuya Metal Co., Ltd. is used as the light reflecting layer 14 and the film thickness thereof is 80 nm.

The pixel electrode 16 shown in FIG. 1 is an anode, is formed on the light reflection layer 14, and is surrounded by the partition wall 12. The pixel electrode 16 is made of a transparent oxide conductive material such as ITO (indium tin oxide), IZO (indium zinc oxide, registered trademark of Idemitsu Kosan Co., Ltd.), or ZnO ₂ . In the present embodiment, the pixel electrode 16 is made of ITO, and the film thickness thereof is different for each emission color of the light emitting element U. The detailed contents will be described later. An optical length corresponding to each light emitting element by controlling the film thickness by inserting a transparent layer such as SiN or SiO ₂ between the light reflecting layer 14 and the ITO so that the film thickness of ITO is common to each light emitting element. You can also get
Further, the light reflection layer 14 and the pixel electrode 16 can be used together. For example, Ag has a high work function, and holes can be injected into the hole injection layer. In this case, in order to optimize the resonance phenomenon, the optical length of each light emitting element is adjusted in the light emitting functional layer.

  As shown in FIG. 1, the light emitting functional layer 18 is formed so as to cover each pixel electrode 16 and the partition 12. That is, the light emitting functional layer 18 is continuous over the plurality of light emitting elements U, and the characteristics of the light emitting functional layer 18 are common to the plurality of light emitting elements U. Although not shown in detail, the light emitting functional layer 18 is formed on the hole injection layer formed on the pixel electrode 16, the hole transport layer formed on the hole injection layer, and the positive transport layer. A light emitting layer and an electron transport layer formed on the light emitting layer.

  In the present embodiment, a trade name “HI-406” manufactured by Idemitsu Kosan Co., Ltd. is used as the hole injection layer, and the film thickness is 40 nm. In addition, as a hole transport layer, a trade name “HT-320” manufactured by Idemitsu Kosan Co., Ltd. is used, and its film thickness is 15 nm. In addition, a positive hole injection layer and a positive hole transport layer can also be formed by the single layer which has a function of a positive hole injection layer and a positive hole transport layer. Other materials can also be used as long as they have similar functions.

  The light emitting layer is made of an organic EL material that emits light by combining holes and electrons. In the present embodiment, the organic EL material is a low molecular material and emits white light. A trade name “BH-232” manufactured by Idemitsu Kosan Co., Ltd. is used as a host material of the light emitting layer, and red, green, and blue dopants are mixed in the host material. In this embodiment, the trade name “RD-001” manufactured by Idemitsu Kosan Co., Ltd. is used as the red dopant material, and the trade name “GD-206” manufactured by Idemitsu Kosan Co., Ltd. is used as the green dopant material. As a blue dopant material, trade name “BD-102” manufactured by Idemitsu Kosan Co., Ltd. is used. In the present embodiment, the thickness of the light emitting layer is 65 nm. Other materials can also be used as long as they have similar functions.

  In this embodiment, the electron transport layer is formed of Alq3 (tris 8-quinolinolato aluminum complex), and the film thickness is 10 nm. Other materials can also be used as long as they have similar functions.

The electron injection layer 20 shown in FIG. 1 is for improving the efficiency of electron injection into the light emitting functional layer 18 and is formed so as to cover the light emitting functional layer 18. That is, the electron injection layer 20 is continuous over the plurality of light emitting elements U. In order to improve the efficiency of electron injection into the light emitting functional layer 18, it is desirable that the potential barrier between the counter electrode 22 that is a cathode and the light emitting functional layer 18 is small. Therefore, as the electron injecting layer 20, LiF, Li Metal compounds such as halides (especially fluorides) or oxides of alkali metals such as ₂ O, Liq, MgO, and CaF ₂ , or oxides, and quinolinol complexes are preferably employed. In the present embodiment, LiF (lithium fluoride) is employed as the electron injection layer 20.

  In addition, since the electron injection layer 20 is formed of an insulating material, the drive voltage of the light emitting element U increases as the film thickness increases. In order to suppress an increase in the value of the driving voltage of the light emitting element U, the thickness of the electron injection layer 20 is preferably in the range of 0.5 nm to 2 nm. In the present embodiment, the thickness of the electron injection layer 20 is set to 1 nm. However, since the quinolinol complex has an electron transporting property, it can be stacked up to about 40 nm also serving as an electron transporting layer.

  The counter electrode 22 shown in FIG. 1 is a cathode and is formed so as to cover the electron injection layer 20. That is, the counter electrode 22 is continuous over the plurality of light emitting elements U. The counter electrode 22 functions as a transflective layer having a property of transmitting part of the light reaching the surface and reflecting the other part (that is, transflective), Mg, Cu, Zn, It is formed from an alloy of any one of Pd, Nd, and Al and Ag. In the present embodiment, the counter electrode 22 is made of MgAg (magnesium silver alloy). As will be described later, in the present embodiment, Mg and Ag are co-evaporated on the electron injection layer 20 to form the counter electrode 22.

  In order to ensure the transparency of the counter electrode 22, the thickness of the counter electrode 22 is preferably 30 nm or less. However, if the thickness is too thin, the resistance of the counter electrode 22 becomes high and it becomes difficult to drive the panel. Therefore, the thickness is preferably 10 nm or more. In the present embodiment, the thickness of the counter electrode 22 is set to 16 nm.

  The light emitting functional layer 18, the electron injection layer 20, and the counter electrode 22 are common to the plurality of light emitting elements U. However, each pixel electrode 16 is separated from the other pixel electrodes 16, so that each pixel electrode 16 and the counter electrode are separated. When a current flows between the light emitting functional layer 22 and the light emitting functional layer 18, the light emitting functional layer 18 emits light only at a position overlapping the pixel electrode 16. That is, the partition 12 partitions the plurality of light emitting elements U.

  In the light emitting device D1 according to this embodiment, a resonator structure that resonates light emitted from the light emitting functional layer 18 is formed between the light reflecting layer 14 and the counter electrode 22. That is, the light emitted from the light emitting functional layer 18 reciprocates between the light reflecting layer 14 and the counter electrode 22, and light of a specific wavelength is strengthened by resonance and passes through the counter electrode 22 to be observed (upper side in FIG. 1). ) (Top emission).

  In the light emitting element Ur, the red of the white light emitted from the light emitting functional layer 18 is intensified, the light emitting element Ug is enhanced in green, and the light emitting element Ug is enhanced in blue, so that the film of the pixel electrode 16 in each light emitting element U The thickness is adjusted. More specifically, in the present embodiment, the film thickness of the pixel electrode 16 in the light emitting element Ur is set to 110 nm, the film thickness of the pixel electrode 16 in the light emitting element Ug is set to 70 nm, and the pixel electrode in the light emitting element Ub. The film thickness of 16 is set to 30 nm.

  As shown in FIG. 1, a passivation layer 24 made of an inorganic material, which is a protective layer for preventing water and outside air from entering the light emitting element U, is formed on the counter electrode 22. The passivation layer 24 is formed from an inorganic material having a low gas permeability such as silicon nitride or silicon oxynitride. In the present embodiment, the passivation layer 24 is made of silicon oxynitride and has a thickness of 225 nm.

  As shown in FIG. 1, in the present embodiment, the second substrate 30 is disposed so as to face the plurality of light emitting elements U formed on the first substrate 10. The second substrate 30 is made of a light transmissive material such as glass. A color filter 32 and a light shielding film 34 are formed on the surface of the second substrate 30 facing the first substrate 10. The light shielding film 34 is a light shielding film body in which an opening 36 is formed corresponding to each light emitting element U. A color filter 32 is formed in the opening 36.

  In the present embodiment, a red color filter 32r that selectively transmits red light is formed in the opening 36 corresponding to the light emitting element Ur, and green light is selectively transmitted in the opening 36 corresponding to the light emitting element Ug. A green color filter 32g to be transmitted is formed, and a blue color filter 32b to selectively transmit blue light is formed in the opening 36 corresponding to the light emitting element Ub.

  The second substrate 30 on which the color filter 32 and the light shielding film 34 are formed is bonded to the first substrate 10 via the sealing layer 26. The sealing layer 26 is formed from a transparent resin material, for example, a curable resin such as an epoxy resin.

FIG. 2 shows that the deposition rate ratio of Mg and Ag forming the counter electrode 22 of the light emitting device Ug of this embodiment is 10: 1, 2: 1, 1: 1, 1: 3, 1: 9, 1:20, It is a figure which shows the measurement result of the various data about each in the case of 1:50 and 0: 100. The resistivity shown in FIG. 2 represents the resistivity of the counter electrode 22. In FIG. 2, the voltage, current efficiency, and power efficiency data are data when the density of the current flowing through the counter electrode 22 is set to 17.5 mA / cm ² . The voltage shown in FIG. 2 represents a voltage applied between the pixel electrode 16 and the counter electrode 22. Moreover, the current efficiency shown in FIG. 2 represents the light emission intensity per 1 A of current in the light emitting element Ug. Furthermore, the power efficiency shown in FIG. 2 represents the light emission intensity per 1 W of power in the light emitting element Ug. In FIG. 2, the measurement results of various data for only the light emitting element Ug that emits green light are shown, but the same result is obtained for the other light emitting elements Ur and Ub.

As shown in FIG. 2 (the thickness of the counter electrode 22 is 16 nm), it can be seen that the resistivity in the case where the deposition rate ratio of Mg and Ag is 10: 1 shows a significantly higher value than in other cases. . In order to suppress the deterioration of the conductivity of the light emitting element, the resistivity of the counter electrode 22 is preferably 31 × 10 ⁻⁸ Ω · m or less. In this embodiment, the lower limit of the deposition rate ratio of Mg and Ag The value (ratio of deposition rate of Mg and Ag when the ratio of the deposition rate of Ag is minimum) is set to 2: 1. As a result of XRF analysis of the vapor deposition sample, it was found that the vapor deposition rate ratio substantially coincided with the atomic ratio.

  Next, the upper limit value of the deposition rate ratio of Mg and Ag (the deposition rate ratio of Mg and Ag when the ratio of the deposition rate of Ag is maximum) will be described. As shown in FIG. 2, the resistivity decreases as the ratio of the Ag deposition rate increases. Therefore, when the ratio of the Ag deposition rate is larger, when the light emitting elements are integrated to form a panel, The power supply capability to each light emitting element will be enhanced.

  Here, it is assumed that the counter electrode 22 is formed of only Ag (when the deposition rate ratio of Mg and Ag is 0:10). Since forces for bonding to each other between Ag atoms (forces for aggregation) work, when the counter electrode 22 is formed of only Ag, the Ag atoms aggregate when the film thickness is 30 nm or less. It becomes island-like and the film becomes discontinuous. Since the film thickness of the counter electrode 22 in this embodiment is 16 nm, when the counter electrode 22 is formed of only Ag, Ag atoms aggregate to form an island shape, and the film becomes discontinuous. End up. As a result, the resistivity of the counter electrode 22 is so high that it cannot be measured.

  FIG. 3 shows a case where the deposition rate ratio of Mg and Ag forming the counter electrode 22 of the light emitting element Ug is 10: 1, 3: 1, 1: 1, 1: 3, 1:10. In this case, the surface roughness of the counter electrode 22 in each case of 0:10 is shown. As shown in FIG. 3, when the deposition rate ratio of Mg and Ag is 0:10 (when the counter electrode 22 is formed of only Ag), the value indicating the surface roughness of the counter electrode 22 is the other cases. It is larger than the value indicating the surface roughness of the counter electrode 22 at. That is, when the counter electrode 22 is formed only from Ag, it can be seen that the concavo-convex portion is generated by aggregation of Ag atoms. On the other hand, when the counter electrode 22 is formed of an alloy of Mg and Ag, the aggregation of Ag atoms is suppressed by the presence of Mg atoms between Ag atoms, so that the counter electrode 22 is formed of only Ag. It can be seen that the occurrence of the uneven portion is suppressed as compared with the case of.

  From the above, although the resistivity decreases as the ratio of the deposition rate of Ag increases, when the deposition rate ratio of Mg and Ag approaches 0: 100, Ag atoms aggregate to form an island shape. The resistivity of the counter electrode 22 shows a remarkably high value, and there arises a problem that the power supply performance to each light emitting element is deteriorated when it is made into a panel. For this reason, it is necessary to set the upper limit value of the deposition rate ratio of Mg and Ag within a range in which the deterioration of the power feeding performance can be suppressed.

  FIG. 4 shows pixels for each of the cases where the deposition rate ratio of Mg and Ag forming the counter electrode 22 of the light emitting element Ug is 10: 1, 1: 9, 1:20, and 1:50. FIG. 4 is a diagram illustrating a relationship between a voltage applied between an electrode 16 and a counter electrode 22 and a current density in the counter electrode 22. In FIG. 4, it can be seen that as the ratio of Ag to Mg increases, the current density at a constant voltage increases, that is, current can be injected efficiently. This is because when LiF is used as the electron injection layer, the electron injection property is improved when the Ag ratio in MgAg forming the counter electrode 22 (cathode) is increased.

FIG. 5 shows pixels for each of the cases where the deposition rate ratio of Mg and Ag forming the counter electrode 22 of the light emitting element Ug is 10: 1, 1: 9, 1:20, and 1:50. It is a figure which shows the relationship between the voltage applied between the electrode 16 and the counter electrode 22, and the brightness | luminance of the light emitting element Ug. In FIG. 5, it can be seen that the luminance at a constant voltage increases as the Ag ratio increases. This is considered to be because the light extraction loss is reduced and the light can be extracted efficiently by improving the current injection property shown in FIG. 4 and increasing the Ag ratio.
FIG. 6 shows the refractive index characteristics when the Ag ratio of the MgAg thin film is changed.

  FIG. 7 shows optical loss characteristics when the Ag ratio and film thickness of the MgAg thin film are changed. “R” on the vertical axis in FIG. 7 indicates the reflectance of the MgAg thin film, and “T” indicates the transmittance. 1- (R + T) indicates the light absorption rate of the MgAg thin film, and the greater this value, the greater the optical loss.

  In FIG. 7, when the MgAg thin film has a thickness of 11 nm and the deposition rate ratio of Mg and Ag is 10: 1, and when the thickness is 10 nm and the deposition rate of Mg and Ag is 1:10 The difference of the optical loss according to the MgAg ratio at the similar film thickness (10 to 11 nm) can be seen. As shown in FIG. 7, it can be seen that when the deposition ratio of Mg and Ag is 1:10, no significant optical loss occurs even when the film thickness is increased to 16 nm. For this reason, when the Ag ratio is increased, the light extraction efficiency is improved.

  FIG. 8 shows light emission for each of the cases where the deposition rate ratio of Mg and Ag forming the counter electrode 22 of the light emitting element Ug is 10: 1, 1: 9, 1:20, and 1:50. It is a figure which shows the relationship between the current density which flows into the element Ug, and the brightness | luminance of the light emitting element Ug. In FIG. 8, it can be seen that the luminance at a constant current increases as the Ag ratio increases. This is because when LiF is used as the electron injection layer, the electron injection property is improved when the Ag ratio is increased in the cathode (counter electrode 22) laminated thereon. Further, when the Ag ratio is increased, the optical constant of the cathode is improved, the light loss is reduced, and the light extraction efficiency is improved.

  From the above, it can be seen that the optimum ratio of Mg: Ag is around 1:20.

  Here, as shown in FIGS. 4, 5, and 8, when the Ag ratio is increased, current is likely to enter and luminance is likely to be emitted. However, when Mg: Ag = 1: 50, current is slightly less likely to enter and luminance is increased. It becomes difficult to come out. In the present embodiment, there is an optimum place at Mg: Ag = 1: 20. When the light emitting surface is observed, when Mg: Ag = 1: 50, light emission failure due to rough surface of the cathode is observed, and characteristic deterioration due to film quality deterioration due to excessively low Mg content is observed. Therefore, it is appropriate to judge that the upper limit of the Ag content is 98%.

From the above, in this embodiment, the deposition rate ratio of Mg and Ag forming the counter electrode 22 is set in the range of 2: 1 to 1:50.
Further, using the light-emitting element described in this embodiment, panel calculation is performed assuming that the display size is 8 inches, the pixel aperture ratio is 60%, a color filter and a circularly polarizing plate are mounted, and the display luminance is 150 cd / m ^2. In this case, the sheet resistance required for the cathode is about 4.5Ω / □. When the sheet resistance at the cathode thickness of 16 nm is estimated from the resistivity shown in FIG. 2, Mg: Ag = 1: 20, which is about 4.5Ω / □, and this required characteristic can be satisfied.
As described above, according to the present embodiment, the resistivity of the counter electrode 22 can be set to a predetermined reference value or less (31 × 10 ⁻⁸ Ω · m or less), so that the conductivity of the light emitting element can be improved. There is an advantage that you can.

  By the way, in FIG. 2, the values of current efficiency and power efficiency in the case where the deposition rate ratio of Mg and Ag is 1: 3, 1: 9, 1:20, 1:50, 0: 100 are the other cases. The value is higher than. This is because when the Ag content in the counter electrode 22 exceeds a predetermined reference value (50 atomic%), the electron injection property of LiF which is the electron injection layer 20 is sufficiently exhibited, and the conductivity of the light emitting element is further improved. It is to do. Therefore, in order to sufficiently exhibit the electron injection property of the electron injection layer 20 and to make the conductivity of the light emitting element more favorable, the deposition rate ratio of Mg and Ag is 1: 1 to 1:50 (more preferably 1: 3 to 1:50).

<A-2: Manufacturing method of light emitting device>
Next, a method for manufacturing the light emitting device D1 of the present embodiment will be described with reference to FIGS.

  First, a plurality of light reflecting layers 14 are formed in a matrix on the first substrate 10 by a known method (step P1 in FIG. 9), and pixel electrodes 16 are formed on the light reflecting layer 14 (step P2 in FIG. 9). ). Subsequently, the partition walls 12 are formed in a lattice shape (step P3 in FIG. 9). For example, a photosensitive material can be mixed with acrylic or polyimide used as the material of the partition wall 12, and the partition wall 12 can be patterned by exposure using a photolithography technique.

  Next, the light emitting functional layer 18 is formed by a known method such as vapor deposition so as to cover the partition wall 12 and the pixel electrode 16 (step P4 in FIG. 9), and the electron injection layer 20 is formed on the light emitting functional layer 18 (FIG. 9 process P5). Further, the counter electrode 22 is formed on the electron injection layer 20 (step P6 in FIG. 9).

  In step P6, Mg and Ag are co-evaporated on the electron injection layer 20 to form the counter electrode 22. As described above, it is preferable to set the deposition rate ratio of Mg and Ag within a range of 2: 1 to 1:50.

  Next, a passivation layer 24 is formed on the counter electrode 22 (process P7 in FIG. 10). Further, after applying the sealing layer 26 on the passivation layer 24, the second substrate 30 on which the color filter 32 and the light shielding film 34 are formed is bonded (step P8 in FIG. 10). The above is the manufacturing method of the light emitting device D1 of the present embodiment.

<B: Second Embodiment>
In the second embodiment, the deposition rate ratio of Mg and Ag forming the counter electrode 22 is set to 1: 9. Other configurations are the same as those of the first embodiment described above, and thus the description of the overlapping parts is omitted.

FIG. 11 is a diagram illustrating measurement results of various data when the thickness of the counter electrode 22 in the light emitting device Ug of the second embodiment is 10 nm, 13 nm, and 16 nm. The sheet resistance shown in FIG. 11 represents the sheet resistance of the counter electrode 22, and the voltage, current efficiency, and power efficiency data shown in FIG. 11 set the density of the current flowing in the counter electrode 22 to 17.5 mA / cm ² . It is data of time. Although illustration is omitted, the values of various data when the thickness of the counter electrode 22 is 20 nm are the same as the values of various data when the film thickness is 16 nm.

  As shown in FIG. 11, it can be seen that the sheet resistance decreases as the thickness of the counter electrode 22 increases, and characteristics such as voltage, current efficiency, and power efficiency are substantially maintained. That is, the thickness of the counter electrode 22 is preferably as large as possible within a range of 30 nm or less in which the transparency of the counter electrode 22 can be secured. In addition, there is an advantage that the greater the thickness of the counter electrode 22, the higher the purity of the color enhanced by resonance.

<C: Third Embodiment>
FIG. 12 is a cross-sectional view showing a structure of a light emitting device D2 according to the third embodiment of the present invention. In each of the embodiments described above, the light emitting functional layer 18 is common to all the light emitting elements U. However, in the third embodiment, the light emitting functional layer 18 is formed separately for each light emission color of the light emitting element U.

  As shown in FIG. 12, each light emitting functional layer 18 (18r, 18g, 18b) includes a hole injection layer 41 formed on the pixel electrode 16, and a hole transport layer formed on the hole injection layer 41. 43, a light emitting layer 45 (45r, 45g, 45b) formed on the hole transport layer 43, and an electron transport layer 47 formed on the light emitting layer 45. The light emitting functional layer 18r of the light emitting element Ur includes a light emitting layer 45r formed of an organic EL material that generates light in the R (red) wavelength region, and the light emitting functional layer 18g of the light emitting element Ug is in the G (green) wavelength region. The light emitting functional layer 18b of the light emitting element Ub includes a light emitting layer 45b formed of an organic EL material that generates light in the B (blue) wavelength region. Including. As shown in FIG. 12, each light emitting functional layer 18 is formed for each area of the light emitting element U divided by the partition 12, and is not connected to the adjacent light emitting functional layer 18.

  In FIG. 12, the film thickness of the hole transport layer 43 in each light emitting element U is adjusted so that red is enhanced in the light emitting element Ur, green is enhanced in the light emitting element Ug, and blue is enhanced in the light emitting element Ub. The In the third embodiment, the emission color of each light-emitting element U is enhanced by adjusting the film thickness of the hole transport layer 43 in each light-emitting element U. However, the present invention is not limited to this. The light emission color of each light emitting element U can be enhanced by adjusting the film thickness of any of the hole injection layer 41, the light emitting layer 45, and the electron transport layer 47.

Also in the third embodiment, the resistance of the counter electrode 22 is set by setting the deposition rate ratio of Mg and Ag forming the counter electrode 22 in the range of 2: 1 to 1:50, as in the above-described embodiments. Since the rate can be set to a predetermined reference value or less (31 × 10 ⁻⁸ Ω · m or less), the conductivity of the light-emitting element can be made good.

<D: Modification>
The present invention is not limited to the above-described embodiments, and for example, the following modifications are possible. Also, two or more of the modifications shown below can be combined.

(1) Modification 1
In each of the above-described embodiments, MgAg is adopted as the counter electrode 22. And can be formed from an alloy. Further, in each of the above-described embodiments, LiF is adopted as the electron injection layer 20, but not limited to this, the electron injection layer 20 may be an alkali metal such as LiF, Li ₂ O, Liq, MgO, CaF ₂ It can be formed with a metal compound such as a halide (especially a fluoride) or an oxide of an alkaline earth metal or a quinolinol complex.

(2) Modification 2
In each of the above-described embodiments, the aspect in which the deposition rate ratio of Mg and Ag forming the counter electrode 22 is set in the range of 2: 1 to 1:50 is not limited to this. The deposition rate ratio of Ag can be arbitrarily changed within a range where the alloy ratio falls within the range of 1: 1 to 2:98 in terms of atomic ratio. In short, the counter electrode 22 is formed of an Ag alloy, and the content of Ag is substantially equal to the deposition ratio.

(3) Modification 3
In each of the above-described embodiments, the organic EL material of the light emitting layer in the light emitting functional layer 18 is a low molecular material, but the light emitting layer can also be formed of a polymer material organic EL material. In this case, the light emitting layer is disposed in a space defined by the partition walls 12 by ink jetting or spin coating.
Further, in each of the above-described embodiments, the color filter 32 is provided on the light emission side in order to increase the purity of the emitted light. However, for example, the color filter 32 may be omitted.

<E: Application example>
Next, an electronic apparatus using the light emitting device according to the present invention will be described. FIG. 13 is a perspective view showing the configuration of a mobile personal computer that employs the light emitting device D1 according to the first embodiment as a display device. The personal computer 2000 includes a light emitting device D1 as a display device and a main body 2010. The main body 2010 is provided with a power switch 2001 and a keyboard 2002. Since this light emitting device D1 uses an OLED element, it is possible to display an easy-to-see screen with a wide viewing angle. Note that the light-emitting device D2 according to the third embodiment may be employed as the display device in the configuration of FIG.

  FIG. 14 shows a configuration of a mobile phone to which the light emitting device D1 according to the first embodiment is applied. The cellular phone 3000 includes a plurality of operation buttons 3001, scroll buttons 3002, and a light emitting device D1 as a display device. By operating the scroll button 3002, the screen displayed on the light emitting device D1 is scrolled. Note that the light emitting device D2 according to the third embodiment may be employed as the display device in the configuration of FIG.

  FIG. 15 shows a configuration of a portable information terminal (PDA: Personal Digital Assistant) to which the light emitting device D1 according to the first embodiment is applied. The information portable terminal 4000 includes a plurality of operation buttons 4001, a power switch 4002, and a light emitting device D1 as a display device. When the power switch 4002 is operated, various types of information such as an address book and a schedule book are displayed on the light emitting device D1. Note that the light-emitting device D2 according to the third embodiment may be employed as the display device in the configuration of FIG.

  Electronic devices to which the light emitting device according to the present invention is applied include those shown in FIGS. 13 to 15, digital still cameras, televisions, video cameras, car navigation devices, pagers, electronic notebooks, electronic papers, calculators. , Word processors, workstations, videophones, POS terminals, printers, scanners, copiers, video players, devices equipped with touch panels, and the like.

It is sectional drawing of the light-emitting device which concerns on 1st Embodiment. It is a figure which shows the measurement result of the various data of the counter electrode which concerns on the same embodiment. It is a figure which shows the measurement result of the surface roughness of the counter electrode which concerns on the same embodiment. In the same embodiment, it is a figure which shows the relationship between the voltage applied between a pixel electrode and a counter electrode, and the current density in a counter electrode. In the same embodiment, it is a figure which shows the relationship between the voltage applied between a pixel electrode and a counter electrode, and the brightness | luminance of a light emitting element. In the same embodiment, it is a figure which shows the refractive index characteristic in a counter electrode. In the same embodiment, it is a figure which shows the optical loss characteristic in a counter electrode. In the same embodiment, it is a figure which shows the relationship between the current density in a counter electrode, and the brightness | luminance of a light emitting element. FIG. 6 is a process diagram for describing the manufacturing method of the light emitting device according to the embodiment. FIG. 6 is a process diagram for describing the manufacturing method of the light emitting device according to the embodiment. It is a figure which shows the measurement result of the various data of the counter electrode which concerns on 2nd Embodiment. It is sectional drawing of the light-emitting device which concerns on 3rd Embodiment. It is a perspective view which shows the specific form of the electronic device which concerns on this invention. It is a perspective view which shows the specific form of the electronic device which concerns on this invention. It is a perspective view which shows the specific form of the electronic device which concerns on this invention.

Explanation of symbols

DESCRIPTION OF SYMBOLS 10 ... 1st board | substrate, 12 ... Partition, 14 ... Light reflection layer, 16 ... Pixel electrode (1st electrode), 18 ... Light emission functional layer, 20 ... Electron injection layer, 22 ... Counter electrode ( Second electrode), D1, D2... Light emitting device, U.

Claims (8)

A substrate,
A light reflecting layer formed on the substrate;
A first electrode formed on the light reflecting layer;
A light emitting functional layer formed on the first electrode;
An electron injection layer formed on the light emitting functional layer;
A second electrode formed on the electron injection layer and having transflective properties;
The second electrode is formed by co-evaporation of Mg and Ag at a predetermined deposition rate, and the Ag content is such that the Ag ratio is 95 atomic% or more and 98 atomic% or less.
Light emitting device. The content of Ag in the second electrode is set so that the resistivity of the second electrode is 7.74 × 10 ⁻⁸ Ω · m or less.
The light emitting device according to claim 1 . The electron injection layer is made of any one of LiF, Li ₂ O, Liq, MgO, CaF ₂ , and the film thickness is 0.5 nm to 2 nm.
The light emitting device according to claim 1. The electron injection layer is LiF;
The light-emitting device according to claim 1. The film thickness of the second electrode is 10 nm or more and 30 nm or less.
The light emitting device according to any one of claims 1 to 4.   An electronic apparatus comprising the light emitting device according to claim 1. A method for manufacturing the light emitting device according to claim 1 or 2,
Forming the light reflecting layer on the substrate;
Forming the first electrode on the light reflecting layer;
Forming the light emitting functional layer on the first electrode;
Forming the electron injection layer on the light emitting functional layer;
Forming the second electrode on the electron injection layer,
In the step of forming the second electrode on the electron injection layer, Mg and Ag are co-deposited on the electron injection layer at a deposition rate ratio of 1:20 to 1:50 to form the second electrode. Forming,
Manufacturing method of light-emitting device. The electron injection layer is LiF;
The manufacturing method of the light-emitting device of Claim 7.

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