CN101091237A - Epitaxial wafer manufacturing method and epitaxial wafer - Google Patents
Epitaxial wafer manufacturing method and epitaxial wafer Download PDFInfo
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- CN101091237A CN101091237A CNA2005800452099A CN200580045209A CN101091237A CN 101091237 A CN101091237 A CN 101091237A CN A2005800452099 A CNA2005800452099 A CN A2005800452099A CN 200580045209 A CN200580045209 A CN 200580045209A CN 101091237 A CN101091237 A CN 101091237A
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- 238000000227 grinding Methods 0.000 claims abstract description 113
- 238000000034 method Methods 0.000 claims abstract description 41
- 239000004575 stone Substances 0.000 claims description 147
- 239000000758 substrate Substances 0.000 claims description 102
- 230000012010 growth Effects 0.000 claims description 91
- 239000013078 crystal Substances 0.000 claims description 38
- 229910052710 silicon Inorganic materials 0.000 claims description 26
- 239000010703 silicon Substances 0.000 claims description 26
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 25
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 claims description 16
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- 238000005516 engineering process Methods 0.000 abstract description 4
- 235000012431 wafers Nutrition 0.000 description 67
- 230000000052 comparative effect Effects 0.000 description 16
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 12
- 239000002245 particle Substances 0.000 description 11
- 229920005591 polysilicon Polymers 0.000 description 10
- 230000015556 catabolic process Effects 0.000 description 5
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- 238000006243 chemical reaction Methods 0.000 description 4
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- 238000010586 diagram Methods 0.000 description 3
- 230000002093 peripheral effect Effects 0.000 description 3
- 239000000243 solution Substances 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
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- 208000037656 Respiratory Sounds Diseases 0.000 description 2
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000009825 accumulation Methods 0.000 description 2
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- 239000004065 semiconductor Substances 0.000 description 2
- 229910000077 silane Inorganic materials 0.000 description 2
- ZDHXKXAHOVTTAH-UHFFFAOYSA-N trichlorosilane Chemical compound Cl[SiH](Cl)Cl ZDHXKXAHOVTTAH-UHFFFAOYSA-N 0.000 description 2
- 239000005052 trichlorosilane Substances 0.000 description 2
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 206010062348 Skull malformation Diseases 0.000 description 1
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- LVXIMLLVSSOUNN-UHFFFAOYSA-N fluorine;nitric acid Chemical compound [F].O[N+]([O-])=O LVXIMLLVSSOUNN-UHFFFAOYSA-N 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/32115—Planarisation
- H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02002—Preparing wafers
- H01L21/02005—Preparing bulk and homogeneous wafers
- H01L21/02008—Multistep processes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
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Abstract
An epitaxial wafer manufacturing method at least includes a process (D) of growing an epitaxial layer thicker than a final target epitaxial layer on an epitaxial wafer having an initial thickness; a process (G) of planarizing the grown epitaxial layer by planarizing polishing; and a process (H) of polishing the epitaxial layer after the planarizing polishing. Preferably, a wafer having a TTV, which indicates planarity, of 2[mu]m or less is used as the epitaxial wafer, and further, the method includes an process (E) of grinding the chamfered part of the wafer and the process (E) of polishing the ground chamfered part. Thus, a technology of manufacturing the epitaxial wafer having excellent thickness uniformity of the epitaxial layer at a high productivity and low cost is provided, even when the epitaxial wafer is provided with the thick epitaxial layer.
Description
Technical field
The present invention relates to a kind of Jingjing sheet of heap of stone, particularly relates to the method for making the thicker and Jingjing sheet of heap of stone that thickness deviation is less of a kind of epitaxial layer.
Background technology
When making semiconductor device, can use and on substrates such as silicon wafer, pile up the Jingjing sheet of heap of stone that silicon single crystal forms.Should build the Jingjing sheet can be according to flow process manufacturing for example shown in Figure 6.At first, prepare through etched silicon wafer (CW) as Jingjing sheet substrate of heap of stone.When using the higher wafer of doping content, in order to prevent autodoping, side forms the CVD oxide-film overleaf.Subsequently, after the surface of grinding wafers (surface of growth epitaxial layer side), wash.Subsequently, use crystals growth device of heap of stone, on the surface through grinding of substrate, the epitaxial layer that is made of silicon single crystal of growing is to predetermined thickness.Thus, can make Jingjing sheet of heap of stone, and then through checking etc. and shipment.
Using the device property of the transistor, MOS, igbt (IGBT) etc. of Jingjing sheet manufacturing of heap of stone, is with the thickness of epitaxial layer, resistivity etc. confidential relation to be arranged.In order to obtain good device property, the epitaxial layer on silicon wafer must have certain and same resistivity, and similarly grows to the thickness identical with predetermined thickness, and the thickness of epitaxial layer and the control of resistivity are important.But, for when keeping Jingjing sheet surface quality of heap of stone, can keep consistent and resistivity and the thickness identical of epitaxial layer with predetermined value, many situations must be sacrificed productivity and be reached.
For example, extensive adopted batch is built brilliant reaction unit (erect-type board), and for the thickness of the epitaxial layer in making batch is certain value, strict ground administration configuration has the Temperature Distribution in the pedestal of substrate, the reaction gas flow balance in the reactor.As a result, with regard to the speed of growth, usually use can the speed of growth about 1/3 to 1/5 as speed of growth condition, builds crystals growth with the speed of growth below 1 micron/minute usually.Again, batch is built brilliant reaction unit, even productivity can be promoted to than one chip reaction unit height, desires control stably, and the thickness of the epitaxial layer in the time of in making batch and then between also comprising batch is being impossible below ± 5%.
On the other hand, at one chip brilliant reaction unit of heap of stone, make the thickness deviation of epitaxial layer lower though can control, the productivity variation than batch device.When particularly making epitaxial layer grow to than thickness, productivity descends significantly, and cost increases substantially.
Therefore, when for example growing thicker epitaxial layer more than 50 microns, that thickness deviation becomes is big, reducing of the productivity, cost improve, particularly make must thicker epitaxial layer (for example more than 100 microns) high Breakdown Voltage Power MOS or IGBT use Jingjing sheet of heap of stone the time, the reduction of cost becomes big problem.
Again, when growing epitaxial layer thicker, silicon is grown as nucleus with the foreign matter that adheres to easily, be grown to granular big protuberance, again, at the periphery of wafer, form the thicker part of epitaxial layer that is called as " protuberance " easily, in device fabrication, these can become the obstacle of fine pattern processing.
There have motion to disclose to be a kind of by in the after-applied attrition process of crystals growth of heap of stone, removes as technology that above-mentioned protuberance or protuberance improve surface state, but because of the problem that has the film thickness distribution variation of so-called epitaxial layer, nearly all practicability not.
And, when making thicker epitaxial layer high-speed rapid growth, also have epitaxial layer in the oblique angle of substrate portion growth and produce the bridge shape with the polysilicon of on pedestal, growing and be connected, in the cooling procedure of this bridge shape connection, can peel off, problems such as back side chip, crackle, breach, crack.Therefore, having motion (opening flat 8-279470 communique with reference to the spy) to disclose a kind of method, is by building crystals growth with the slow speed of growth below 1.2 microns/minute, with the growth of the polysilicon that is suppressed at oblique angle portion etc.But during with the thicker epitaxial layer of bradyauxesis, can cause that productivity more reduces, cost significantly increases.
Summary of the invention
In view of above problem points, main order of the present invention provides a kind of technology, even have thicker epitaxial layer, and can also high productivity and make at low cost and have the inhomogeneity Jingjing sheet of heap of stone of good built crystal layer thickness.
Method according to manufacturing of the present invention Jingjing sheet of heap of stone, a kind of manufacture method of Jingjing sheet of heap of stone can be provided, system is at the method for making Jingjing sheet of heap of stone, it is characterized by, at least comprise following step:, make epitaxial layer grow to the step thicker than the built crystal layer thickness of ideal having the of heap of stone brilliant of initial stage thickness with on the surface of substrate; Aforementioned epitaxial layer of having grown is carried out flat surface grinding and the step of planarization; And the step of grinding the epitaxial layer after aforementioned flat surface grinding.
It is thicker than the thickness of ideal epitaxial layer so epitaxial layer to be grown to, and subsequently, implements flat surface grinding and grinding, when being processed into the epitaxial layer of target thickness, can make the Jingjing sheet of heap of stone of the epitaxial layer with thickness and film thickness excellent in uniform.Again, according to the method, because can relax the thickness control of growth during epitaxial layer, and with for example in the past 3 to 6 times speed high-speed rapid growth, the flat surface grinding etc. of epitaxial layer thereafter can be carried out with the short time, high productivity and Jingjing sheet of heap of stone cheaply can be made.
At this moment, preferably, carry out the flat surface grinding and the grinding of aforementioned epitaxial layer, make the substrate integral thickness that grinds behind the aforementioned epitaxial layer, become aforementioned brilliant initial stage thickness and the ideal thickness of the aforementioned epitaxial layer thickness after adding together with substrate of heap of stone.
Based on the initial stage thickness of substrate, the ideal thickness of epitaxial layer etc., comply with the man-hour that adds that thickness carries out epitaxial layer that grinds off of predetermined plane grinding separately and grinding, can accuracy make wafer well, more efficiently with the epitaxial layer of wishing thickness.
At this moment, for the aforementioned brilliant initial stage thickness of heap of stone of difference identification, preferably at substrate additional laser mark with substrate.
So, by at substrate additional laser mark, the initial stage of learning each substrate even thickness difference is arranged between the substrate, can also be processed into the thickness of epitaxial layer and wish thickness during thickness.
Again, preferably, thickness with the substrate integral body behind the aforementioned epitaxial layer of flat surface grinding, be set at aforementioned crystalline substance of heap of stone is added the thickness that together forms with the ideal thickness of the initial stage thickness of substrate, aforementioned epitaxial layer and the thickness that grinding ground off after the aforementioned flat surface grinding, carry out the flat surface grinding of aforementioned epitaxial layer.
Because the thickness behind the growth epitaxial layer mainly is to adjust by flat surface grinding, as above-mentioned consideration grinding subsequently grind off thickness after, when carrying out flat surface grinding, can form epitaxial layer more certain and efficiently.
Aforementioned crystalline substance substrate of heap of stone, preferably using TTV (expression flatness) is the substrate below 2 microns.
When use has the substrate of high flat degree like this, can form epitaxial layer and also have the goods that height is smooth and thickness evenness is good.
Aforementioned crystalline substance of heap of stone with substrate on before the growth epitaxial layer, preferably, further contain at least in the rear side of this substrate certainly and form the step of CVD oxide-film to the central part of the thickness direction of oblique angle portion.
When the rear side of substrate and oblique angle portion form oxide-film, when particularly using the high substrate of doping content, the autodoping in can preventing crystals growth of heap of stone, adnation long crystal etc. overleaf in the time of can also easily removing crystals growth of heap of stone.
After forming aforementioned CVD oxide-film, preferably, grind the aforementioned brilliant surface of using the aforementioned epitaxial layer side of growth of substrate of heap of stone.
Even the CVD oxide-film also is formed at the face side of substrate, the mirror-polishing by the lapped face side, the epitaxial layer of the excellent in crystallinity of can growing.
Above-mentioned crystalline substance of heap of stone with substrate on behind the growth epitaxial layer, preferably further contain this substrate of grinding oblique angle portion step and grind this grinding after the step of oblique angle portion.
Behind the crystals growth of heap of stone,, put the shape of oblique angle portion in order,, can also positively prevent to produce subsequently particle etc. even grown thicker epitaxial layer by oblique angle portion being applied grinding and grinding the deposit of removing oblique angle portion.
Preferably the ideal thickness setting with aforementioned epitaxial layer is more than 50 microns.The ideal thickness of epitaxial layer particularly more than 100 microns the time, can positively be sought the epitaxial layer high-speed rapid growth and make the thickness homogenizing by the flat surface grinding film more than 50 micron the time, and by promoting productivity cost degradation.
In the step of the aforementioned epitaxial layer of growth, preferably, it is thicker at least more than 10 microns than aforementioned ideal thickness that this epitaxial layer is grown to.
That is, this epitaxial layer is grown to thicker more than 10 microns the time than aforementioned ideal thickness, can positively guarantee the thickness that grinds off by flat surface grinding and grinding.
Preferably make aforementioned epitaxial layer with the growth more than 2.2 microns/minute.
By making crystals growth of heap of stone at a high speed, can positively increase productivity, even if high-speed rapid growth forms the lower epitaxial layer of flatness, can also be processed into the high epitaxial layer of flatness by flat surface grinding subsequently.
Preferably, use the crystals growth device of heap of stone of the batch aforementioned epitaxial layer of growing.
When using the device of batch, the epitaxial layer of can once growing on most substrates can further promote productivity.
Preferably, the growth of aforementioned epitaxial layer is that aforementioned crystalline substance of heap of stone is configured in substrate in the putting groove of pedestal, and the formation of this putting groove is that deepen towards central authorities gradually from periphery the bottom.
When using pedestal like this to grow epitaxial layer, be not easy to pile up, can suppress to be attached to the pedestal of substrate or produce particle in generations such as the oblique angle of substrate portions.
Aforementioned crystalline substance of heap of stone with substrate on behind the growth epitaxial layer, preferably, make the showing out of initial stage of this substrate back side by etching, subsequently, aforementioned epitaxial layer is carried out flat surface grinding.
When making the back side at the initial stage of exposing carry out the flat surface grinding of epitaxial layer, can positively improve the flatness of epitaxial layer as datum level.
Preferably, use the spin etch device to carry out aforesaid etching.
Particularly, in epitaxial layer when growth, pile up when polycrystalline is arranged in the rear side of substrate, uses the spin etch device to expose at the back side at the initial stage of chien shih substrate in short-term.
Aforementioned crystalline substance of heap of stone preferably uses silicon substrate with substrate.
Use the Jingjing sheet of heap of stone of silicon substrate to make in large quantities, even effective especially for the present invention of the thicker homogenizing that also can seek film thickness of epitaxial layer and cost degradation.
Preferred aforementioned crystalline substance substrate of heap of stone, the angle of taper of using oblique angle portion is than the little substrate of 22 degree.
By using the less substrate of angle of taper, can be suppressed at the crystals growth of heap of stone of oblique angle portion, can prevent to be attached to pedestal etc.
And, according to the present invention, can provide a kind of Jingjing sheet of heap of stone, be Jingjing sheet of heap of stone by the preceding method manufacturing, it is characterized by, the thickness of the epitaxial layer of this Jingjing sheet of heap of stone is more than 50 microns, the thickness deviation of this epitaxial layer is below ± 4%.
When building the Jingjing sheet according to the inventive method manufacturing, as above-mentioned, it is thicker to obtain a kind of epitaxial layer, and the less Jingjing sheet of heap of stone of the deviation of its thickness.
Again, the present invention can provide a kind of Jingjing sheet of heap of stone, it is the Jingjing sheet of heap of stone that on substrate, is formed with epitaxial layer, wherein the flatness TTV of this aforesaid base plate (expression flatness) is below 2 microns, the thickness of formed epitaxial layer on this substrate be more than 50 microns and the thickness deviation of this epitaxial layer for below ± 4%.
Particularly use the higher substrate of flatness, when building the Jingjing sheet,, can access the good and inexpensive Jingjing sheet of heap of stone of flatness, thickness evenness that epitaxial layer is thicker and its thickness deviation is less, whole as above-mentioned according to the inventive method manufacturing.
At this moment, can also and then make the interior thickness deviation of face of aforementioned Jingjing sheet of heap of stone for below ± 2 microns.
Because initial substrate flatness is higher, by the resulting Jingjing sheet of heap of stone of the present invention, the interior thickness deviation of the face of its wafer integral body also becomes less, the productive rate in the time of particularly can promoting devices such as making the high withstand voltage MOS significantly.
When the present invention built the Jingjing sheet in manufacturing, the high-speed rapid growth epitaxial layer became to wish the Jingjing sheet of heap of stone of thickness subsequently to thicker than last thickness by flat surface grinding and attrition process.Thus, can high productivity and make the Jingjing sheet of heap of stone of epitaxial layer at low cost with thicker and film thickness excellent in uniform.
For example, even if when making Jingjing sheet thicker of heap of stone about 100 microns, can also form the good epitaxial layer of flatness of the protuberance of less, the no projection of thickness deviation of epitaxial layer or periphery.Therefore, when Jingjing sheet so of heap of stone is used in the device that manufacturing must microfabrication, the productive rate of boost device significantly.
Description of drawings
Fig. 1 is the flow chart according to an example of the manufacturing step of Jingjing sheet of heap of stone of the present invention.
Fig. 2 is at the synoptic diagram of the wafer of each step when making of heap of stone Jingjing sheet according to the present invention.
Fig. 3 is the figure of thickness (the brilliant thickness of heap of stone) deviation of the epitaxial layer of embodiment and comparative example.(A) comparative example, (B) embodiment.
Fig. 4 is the section shape of peripheral part of the Jingjing sheet of heap of stone of embodiment and comparative example.(A) comparative example, (B) embodiment.
Fig. 5 is the figure of the particle degree (particle diameter＞0.2 micron) of the Jingjing sheet of heap of stone of embodiment and comparative example.(A) comparative example, (B) embodiment.
Fig. 6 is the flow chart of an example of Jingjing sheet manufacturing step of heap of stone in the past.
Fig. 7 is the synoptic diagram of an example of the operable pedestal of the present invention.
Fig. 8 is the figure of angle of taper of the oblique angle portion of explanation wafer.
Embodiment
Below, the limit is with reference to accompanying drawing, and the limit specifically describes uses silicon substrate (silicon wafer) as the brilliant substrate of using of heap of stone, the optimal way when building the Jingjing sheet to make.
Fig. 1 is the flow chart according to an example of the manufacturing step of Jingjing sheet of heap of stone of the present invention.Again, Fig. 2 is in the schematic diagram of the wafer of each step when making of heap of stone Jingjing sheet according to the present invention.
At first, and the prepared silicon wafer (CW: the chemical etching wafer), as substrate (the brilliant substrate of using of heap of stone) (Fig. 1 (A)) in order to the growth epitaxial layer.
This silicon wafer can use common manufacturing silicon wafer that semiconductor device uses.For example will by Qie Kesijifa (Czochralski method) cultivate form silicon single crystal section after, make via steps such as grinding, oblique angle processing, etchings.
Again, because the flatness of substrate has great influence to the epitaxial layer of growth thereon and then to the flatness of last prepared Jingjing sheet of heap of stone, so the flatness of substrate is got over Gao Yuejia, flatness on concrete, being to use TTV (expression flatness) is the goods below 2 microns, is preferably especially below 1 micron.
Again, the present invention is the step subsequently, behind growth epitaxial layer on the substrate, by flat surface grinding and grinding epitaxial layer, is processed into and wishes thickness, and so flat surface grinding is preferably carried out with the initial stage thickness based on substrate.Therefore, should measure the thickness as the silicon wafer of substrate at first, for each initial stage thickness of identification, preferably additional on substrate have a laser labelling.For example, in the rear side of each wafer, use the additional id number of laser labelling, the data that can manage the initial stage thickness of substrate out of the ordinary by this id number.
Before growth epitaxial layer on the surface of the silicon wafer of being prepared, pile up CVD (SiO at rear side to the central part of the thickness direction of oblique angle portion of this substrate certainly at least
2) oxide-film (Fig. 1 (B)).
Shown in Fig. 2 (A), when the rear side of wafer 1 forms CVD oxide-film 2, in the time of can preventing to use the higher substrate of doping content, the autodoping when crystals growth of heap of stone.Again, irrelevant with doping content, the central part of the thickness direction from rear side to oblique angle portion forms CVD oxide-film (SiO
2) time, can be suppressed at growth when of heap of stone brilliant, overleaf or the accumulation of the polysilicon of oblique angle portion or pollution.At epitaxial layer growth step subsequently,, when removing the CVD oxide-film thereafter, can easily remove by removing even rear side has silicon layer growth again.And, when there is the CVD oxide-film at the back side, the advantage that is not easy to be attached to pedestal is also arranged.Again, in order to give full play to these effect, preferred CVD oxide-film forms the thickness more than 0.2 micron.
Forming the CVD oxide-film, grind the substrate surface rear flank that the epitaxial layer growth is arranged, wash (Fig. 1 (C)).Again, also suitably wash, will omit this record in other step.
As above-mentioned, at the back side of wafer and oblique angle portion when forming the CVD oxide-film, the possibility that forms the CVD oxide-film is also arranged in face side.When forming the CVD oxide-film from the teeth outwards, have the possibility of polycrystalline silicon growth in brilliant step of heap of stone.Therefore, after forming the CVD oxide-film, be formed with the face side of epitaxial layer, the positively good epitaxial layer of grown junction crystallinity and thickness evenness by grinding.
Subsequently, shown in Fig. 2 (B), growth epitaxial layer 3 on the surface of the substrate through grinding 1.Subsequently, make this moment epitaxial layer 3 grow to thickness thicker (Fig. 1 D) than ideal epitaxial layer.
The thickness that epitaxial layer 3 is grown can be considered the grinding off thickness etc. of flat surface grinding that thickness, the epitaxial layer growth back of the epitaxial layer of the ideal that requires is carried out and grinding and determines.But if when just making epitaxial layer 3 grow to the thicker several microns left and right sides of thickness than ideal, the flat surface grinding of passing through thereafter comes planarization that the possibility that can't fully carry out is arranged.Therefore, consider the thickness that grinds off of the flat surface grinding of the epitaxial layer carry out subsequently and grinding, preferably grow to thicklyer more than 10 microns that special preferred growth is to thicker more than 15 microns than the thickness of ideal than the thickness of ideal.But if the thickness of epitaxial layer is too thick, because growth time and flat surface grinding time subsequently can be elongated, productivity has the possibility of reduction, so preferably make brilliant grown in thickness of heap of stone to ideal+30 micron.
The thickness of the epitaxial layer of ideal, though relevant with the application target of Jingjing sheet of heap of stone, when the final thickness of epitaxial layer is thick more, the flat surface grinding by subsequently etc. to grind off ratio relatively less, can bring into play fully to promote productivity and reduce cost.Therefore, the ideal thickness setting of epitaxial layer is more than 50 microns, is preferably especially more than 80 microns.In other words, when the final thickness that the present invention has an epitaxial layer for manufacturing is a Jingjing sheet of heap of stone more than 50 microns, effective especially.
Again, the speed of growth of growth epitaxial layer is not particularly limited, because the speed of growth can promote productivity more soon, is 3～6 times of the speed of growth in the past, is more than 2.2 microns/minute on concrete, more preferably the high speed more than 3.0 microns/minute.So high-speed rapid growth can be realized by the quantity delivered that increases silane source unstrpped gases such as (silane source).
Employed crystals growth device of heap of stone also is not particularly limited, and usually, uses vertical type, cylinder type, monolithic type widely, and the present invention can use any device.
For example, during with the crystals growth device of heap of stone of batch, can be with more than 2.2 microns/minute, the epitaxial layer of once growing on the multi-disc wafer can positively promote productivity.On the other hand,, can grow, can promote productivity fully with the crystals growth speed of heap of stone more than 5.0 microns/minute at the device of one chip.
When forming thicker epitaxial layer, at wafer and accommodate between the pedestal of this wafer, have generation and connect the possibility of pasting because of polycrystalline silicon bridge shape by high-speed rapid growth again.Therefore, preferably, use the pedestal 5 of the putting groove 6 that is formed with V-shape, the putting groove 6 of this V-shape is as shown in Figure 7, and deepen towards central authorities gradually from periphery the bottom.When placement substrate (silicon wafer) 1 is built crystals growth in the putting groove 6 of pedestal 5 like this, can suppress above-mentioned generation bridge shape effectively and connect.
Again, as the silicon wafer 1 of substrate, the angle of taper θ in as shown in Figure 8 oblique angle portion 7, angle is below 22 degree usually, it is following during for the oblique angle shape for example to have angle of taper θ and be 11 degree, be not easy to produce wafer 1 and pedestal paste or polysilicon is deposited in the back side.Again, asymmetric by the shape that makes oblique angle portion, make CVD oxide-film lining central part as described above to the thickness direction of oblique angle portion, or adopt aforementioned both, can suppress polysilicon and be deposited in oblique angle portion etc.When using,, can become the oblique angle shape of common substrate and do not have obstruction because carry out oblique angle processing by next step so with common variform oblique angle shape.
Behind growth epitaxial layer on the wafer, grinding wafer bevel bight, and then grind through the oblique angle of grinding portion (Fig. 1 (E)).
The shape of the oblique angle portion of wafer is one of the key factor that has influence on the quality of device step.Shape that can be by pedestal as described above or oblique angle portion shape etc., be suppressed at accumulation polysilicons such as oblique angle portion to a certain degree,, or when using the asymmetric wafer of the shape of oblique angle portion, increase if pile up when polysilicon is arranged in oblique angle portion in device step generation particle subsequently, the possibility of crackle.
Again, during the thicker epitaxial layer of growing film thickness, as above-mentioned, the speed of growth of periphery accelerates and is easy to generate protuberance (protuberance), separating the bad reason of picture when this protuberance can become the photoengraving step.For the boost device characteristic, toward aspect the MOS of miniaturization progress, the resolution countermeasure of periphery is important in pattern processing.
Therefore, after the crystals growth step at a high speed of heap of stone, shown in Fig. 2 (C), oblique angle portion is carried out the cone angle grinding or carries out the shape that oblique angle portion is put in grinding in order by fixing abrasive grains, and then this is ground through the oblique angle of grinding portion, can be processed into the desirable oblique angle portion shape that can be used in most advanced device.That is, by implementing the identical oblique angle processing of using with most advanced device of wafer, can stably carry out reaching the microfabrication of periphery in epitaxial layer growth back.
And, as the above-mentioned oblique angle portion processing of carrying out, can also after being carried out flat surface grinding, epitaxial layer described later carry out.That is, epitaxial layer carried out flat surface grinding after, grinding oblique angle portion puts shape in order, grinds oblique angle portion subsequently and carries out mirror finish.Perhaps, can also after grinding oblique angle portion, carry out the flat surface grinding of epitaxial layer, grind oblique angle portion subsequently.
Again, after for example using wafer to form epitaxial layer with asymmetrical oblique angle shape, by oblique angle portion is applied grinding and grinding, can also be processed into and to be more suitable for the identical oblique angle shape of minute surface wafer device step and common (for example angle of taper of 22 degree).
Subsequently, make the initial stage of the rear side of wafer show out (Fig. 1 (F)) by etching.Use HF etc. can make the initial stage back side of wafer expose, shown in Fig. 2 (D) by the CVD oxide-film of etching removal rear side.Even if the rear side at wafer has polycrystalline silicon growth during crystals growth of heap of stone, when oxide-film is removed in etching, can also remove (removing) polysilicon simultaneously again.But, because wafer is immersed in the common etching of etching solution, the long possibility of needs is arranged, for fear of long-time etching, can use spin etch.For example, using fluorine nitric acid is etching solution, by a spin etch etched back side, removes the polysilicon that is deposited in rear side.That is, remove the SiO of rear side by etching
2Oxide-film can be in that the initial stage of chien shih chip back surface side shows out in short-term.SiO by removal rear side like this
2, can keep the initial stage thickness of substrate.
Again, show out and the etching carried out, can behind the layer of heap of stone of growth on the wafer, carry out, can also carry out between grinding and the grinding in that aforementioned oblique angle portion is carried out in order to make as the initial stage of above-mentioned rear side.
Subsequently, make aforementioned epitaxial layer planarization of having grown (Fig. 1 (G)), and then grind the epitaxial layer (Fig. 1 (H)) after this flat surface grinding by flat surface grinding.
Grind and cut and grind by this epitaxial layer being carried out the plane, can adjust the thickness of last epitaxial layer and Jingjing sheet of heap of stone.For example, as above-mentioned, measure the initial stage thickness of substrate and manage in mode that can identification, to grind substrate integral thickness behind the epitaxial layer is brilliantly to add the thickness that together forms with the initial stage thickness of substrate and the ideal thickness of epitaxial layer with of heap of stone, come to each sheet separately the epitaxial layer of substrate carry out flat surface grinding and grinding.
Particularly, the flat surface grinding of epitaxial layer can be carried out planarization, can adjust the thickness of epitaxial layer simultaneously significantly.As datum level, when carrying out the flat surface grinding of epitaxial layer, can obtain high flatness with the initial stage back side of being exposed by etching again.For example, the id number of the laser labelling that is added on the substrate based on the initial stage, discern the initial stage thickness of wafer separately, set residual thickness after the flat surface grinding for the thickness that grinds off that will produce because of grinding after the ideal thickness of the initial stage thickness of wafer, epitaxial layer and the flat surface grinding adds the thickness that forms together, carry out flat surface grinding.By carrying out so flat surface grinding, epitaxial layer can be processed into high flat degree, can be adjusted to desirable thickness simultaneously.Again, can also form the CVD oxide-film after, when implementing surface grinding (Fig. 1 (C)), consider its grinding thickness.
Again, do not limit from the initial period and wait the of heap of stone brilliant thickness of managing separately, can also behind crystals growth of heap of stone, measure the thickness of substrate and the thickness of epitaxial layer and decide processing to grind off thickness with substrate by the ID mark.Again, can also set and grind off thickness but not residual thickness after setting flat surface grinding, carry out flat surface grinding.
Behind the flat surface grinding epitaxial layer, grind.Grind by this, can remove the epitaxial layer that produces from flat surface grinding machining deformation, can make the surperficial mirror-polishing of epitaxial layer.As described above, if can adjust after the flat surface grinding residual thickness for after the ideal thickness of the initial stage thickness of wafer, epitaxial layer and the flat surface grinding grinding produced when grinding off thickness and adding the thickness that together forms, can also grind by the above-mentioned predetermined thickness that grinds off.
By as above-mentioned step, can make the Jingjing sheet 4 of heap of stone of the epitaxial layer shown in Fig. 2 (E) with thicker and high flat degree.
For example, when using normally used in the past setting type crystals growth device growth of heap of stone epitaxial layer, growth phase is very difficult at the epitaxial layer below ± 5% for specification center thickness deviation, but according to the present invention, be pre-formed thicker epitaxial layer in mode without the control thickness deviation, by setting predetermined thickness (brilliant initial stage thickness+specification center built crystal layer thickness+grinding thickness of heap of stone) when the flat surface grinding, the thickness of wafer integral body can be processed into the deviation that comprises in the face and be ± 2 microns with substrate.Because deviation is about ± 1 micron in the face of institute's use substrate, the thickness that can control epitaxial layer with respect to the specification center is ± 2.5 microns.If the specification center thickness is when thicker than 50 microns, with the crystals growth device of heap of stone of setting type in the past relatively the time, the THICKNESS CONTROL of epitaxial layer be more than in the past the par, when target thickness is thick more, its controlled can ratio improvement.
And, concrete on, the thickness that also can make epitaxial layer is more than 50 microns, the thickness deviation of epitaxial layer is the Jingjing sheet of heap of stone below ± 4%.Particularly, the substrate at initial stage is to use TTV (expression flatness) when being the silicon wafer below 2 microns, the thickness that can also be manufactured on formed epitaxial layer on the wafer is more than 50 microns and the thickness deviation of epitaxial layer is Jingjing sheet of heap of stone ± 4% below, so can also make in the face of wafer thickness deviation be ± 2 microns with interior Jingjing sheet of heap of stone.
Again, in the present invention, for example, because can use 3～6 times the speed of growth in the past to build crystals growth, even carry out unnecessary crystals growth of heap of stone (for example is about 20 microns by the thickness that grinding and grinding ground off), can also increase productivity about 2 to 3 times.For example, when forming 100 micron thickness epitaxial layers at last, in the present invention, the epitaxial layer growth, even carry out the processing (grinding and grinding) of oblique angle portion and epitaxial layer, the cost of these steps and was grown the cost of step of epitaxial layer relatively the time in order to improve flatness with low speed in the past, had only approximately about half and promptly can finish.As a result, the whole cost of Jingjing sheet manufacturing process of heap of stone can reduce significantly.
So, by the made Jingjing sheet of heap of stone of the present invention, be to have equal planarization and mirror finish with the employed wafer of the most advanced device of manufacturing with thicker epitaxial layer.Thicker Jingjing sheet of heap of stone of film thickness so can be fit to be used in high Breakdown Voltage Power MOS, the IGBT etc. that form among the fine pattern, can access stable device property and high yield.
Below, the present invention's embodiment and comparative example are described.
Embodiment
Prepare 200 millimeters of 200 diameters, 625 microns of thickness specifications, P type, resistivity 5～10m Ω cm, the silicon wafer of TTV (flatness specification) below 2.0 microns, as crystalline substance substrate of heap of stone.By CVD each wafer formed oxide-film (SiO from rear side to oblique angle portion
2).Again, each wafer is the thickness of measuring before formation CVD oxide-film separately (initial stage thickness), adds id number by laser labelling on each wafer.
Crystals growth of heap of stone is to use the setting type of high-frequency heating pattern crystals growth device of heap of stone.Crystals growth thickness of heap of stone be with 120 microns be target, it is to use H that gas source (source gas) is to use trichlorosilane, vector gas
2Gas, the feed speed of adjustment trichlorosilane, making the speed of growth is 4 microns/minute.Setting crystals growth temperature (base-plate temp) of heap of stone is 170 ℃.Again, target epitaxial layer resistivity is N type, 30 Ω cm.
Again, the bridge shape when suppressing of heap of stone crystals growth connects, and uses a pedestal, and it is the V-shape of 0.2 millimeter from periphery toward to central authorities the inclination degree of depth being arranged that this pedestal is formed with its bottom of a putting groove.
Use as above-mentioned condition behind growth epitaxial layer on the silicon wafer, oblique angle portion is carried out grinding (being equivalent to #3000), grinds subsequently, processing oblique angle portion becomes mirror status.
After finishing the processing of oblique angle portion, wafer is immersed in the SiO that removes rear side in the HF aqueous solution
2Film.At this moment, remove the polysilicon of in crystals growth process of heap of stone, growing thinly, the back side of the wafer at initial stage is exposed, as datum level, in order to guarantee the flatness of flat surface grinding step subsequently at the wafer peripheral part by removing (lift-off).
Subsequently, use plane grinding apparatus, change the set point of processing thickness according to the initial stage thickness of each wafer, epitaxial layer grinding (#3000) to the thickness (100 microns) with respect to last epitaxial layer is added 7 microns thickness that form of grinding thickness till.This flat surface grinding is to be that datum level carries out with the above-mentioned initial stage back side of exposing substrate.
After the flat surface grinding, using batch grinder and silicon dioxide based abrasive, grind to the stage and keep high flat degree, is that 7 microns mode is processed into minute surface with the flat stone mill bevel to be ground to the thickness that grinds off that machines grinding for the 1st time.
After grinding end, use the common employed ammonia/hydrogen peroxide of minute surface wafer of manufacturing and the cleaning solution of hydrochloric acid/dioxygen water system to wash, obtain having the Jingjing sheet of heap of stone of 100 micron thickness epitaxial layers.
Comparative example
To with the identical silicon wafer of employed substrate in an embodiment, use setting type crystals growth device of heap of stone, at the about 100 microns thickness of the superficial growth epitaxial layer of wafer, make Jingjing sheet of heap of stone.
The deviation of the thickness of the epitaxial layer of the Jingjing sheet of heap of stone that mensuration embodiment and comparative example make separately (brilliant thickness of heap of stone), separately as shown in Figure 3.(A) being the data of expression comparative example, (B) is the data of expression embodiment.
Shown in Fig. 3 (A), for striding and 96～108 micrometer ranges, deviation is bigger in wafer face for the of heap of stone brilliant thickness of comparative example.
On the other hand, shown in Fig. 3 (B), the Jingjing sheet of heap of stone of embodiment, the thickness of epitaxial layer only comprises minority numerical value in 98～102 micrometer ranges, but in wafer face all in 100 ± 4 microns scope, excellent in uniform.
Subsequently, measure the section shape of the peripheral part of each made wafer of embodiment and comparative example, separately as shown in Figure 4.(A) being the data of expression comparative example, (B) is the data of expression embodiment.
In the outermost perimembranous of the Jingjing sheet of heap of stone of comparative example, can observe and be called the protuberance frontal bossing.When having so big protuberance, when making device, have the problem that to carry out microfabrication at stepper.
On the other hand, learn at the wafer of embodiment and can't observe protuberance, can carry out microfabrication till the outermost perimembranous of wafer.
And Fig. 5 is the figure of the particle degree (particle diameter＞0.2 micron) of each Jingjing sheet of heap of stone of showing that embodiment and comparative example are made.
Shown in Fig. 5 (A), comparative example has the macroparticle of most particle diameters more than 5 microns, and thinking has great influence to device yield.Relatively, shown in Fig. 5 (B), the existing number of particles of embodiment is less, and does not almost have the macroparticle of particle diameter more than 5 microns.Whether so particle is arranged, and particularly, this quality project can have influence on as the productive rate of microfabrication devices such as high Breakdown Voltage Power MOS and improve, and the Jingjing sheet of heap of stone of learning embodiment is used for making so that device is extremely useful.
Again, not limit be above-mentioned execution mode in the present invention.Above-mentioned execution mode is exemplary, has the technological thought with claims of the present invention record, identical in fact structure, reaches the mode of same function effect, is all to be included in the technical scope of the present invention.
For example, when making of heap of stone Jingjing sheet, do not limit the step of Fig. 1, can change sequence of steps, for example, can also after the epitaxial layer growth, carry out the grinding of oblique angle portion and the flat surface grinding of epitaxial layer, and then carry out the grinding of oblique angle portion and epitaxial layer according to the present invention.Again, can also append step, for example, needless to say certainly carry out suitable washing after the grinding, after the grinding etc.
Again, of heap of stone brilliant do not limit silicon wafer,, be not particularly limited if during the substrate that uses as Jingjing sheet of heap of stone with substrate.Again, it is CW that employed silicon wafer does not limit, and can also use the also PW through grinding (through polished wafer) of rear side certainly.
Claims (20)
1. the manufacture method of a Jingjing sheet of heap of stone, it is at the method for making Jingjing sheet of heap of stone, it is characterized by, and comprises following step at least:
Having the of heap of stone brilliant of initial stage thickness, make epitaxial layer grow to the step thicker than the built crystal layer thickness of ideal with on the surface of substrate;
Aforementioned epitaxial layer of having grown is carried out flat surface grinding and the step of planarization; And
The step of the epitaxial layer of grinding after aforementioned flat surface grinding.
2. the manufacture method of Jingjing sheet of heap of stone as claimed in claim 1, wherein aforementioned epitaxial layer is carried out flat surface grinding and grinding, make the substrate integral thickness that grinds behind the aforementioned epitaxial layer, become aforementioned brilliant initial stage thickness and the ideal thickness of the aforementioned epitaxial layer thickness after adding together with substrate of heap of stone.
3. the manufacture method of Jingjing sheet of heap of stone as claimed in claim 1 or 2 is wherein for the aforementioned brilliant initial stage thickness with substrate of heap of stone of difference identification, at substrate additional laser mark.
4. as the manufacture method of each described Jingjing sheet of heap of stone in the claim 1～3, wherein with the thickness of the substrate integral body behind the aforementioned epitaxial layer of flat surface grinding, be set at aforementioned crystalline substance of heap of stone is added the thickness that together forms with the ideal thickness of the initial stage thickness of substrate, aforementioned epitaxial layer and the thickness that grinding ground off after the aforementioned flat surface grinding, carry out the flat surface grinding of aforementioned epitaxial layer.
5. as the manufacture method of each described Jingjing sheet of heap of stone in the claim 1～4, wherein using TTV is that substrate below 2 microns is as aforementioned wafer substrate of heap of stone.
6. as the manufacture method of each described Jingjing sheet of heap of stone in the claim 1～5, wherein aforementioned crystalline substance of heap of stone with substrate on before the growth epitaxial layer, further contain at least in the rear side of this substrate certainly and form the step of CVD oxide-film to the central part of the thickness direction of oblique angle portion.
7. the manufacture method of Jingjing sheet of heap of stone as claimed in claim 6, wherein form aforementioned CVD oxide-film after, grind the surface of the aforementioned brilliant aforementioned epitaxial layer side of growth with substrate of heap of stone.
8. as the manufacture method of each described Jingjing sheet of heap of stone in the claim 1～7, wherein aforementioned crystalline substance of heap of stone with substrate on behind the growth epitaxial layer, further contain this substrate of grinding oblique angle portion step and grind this grinding after the step of oblique angle portion.
9. as the manufacture method of each described Jingjing sheet of heap of stone in the claim 1～8, wherein the ideal thickness setting with aforementioned epitaxial layer is more than 50 microns.
10. as the manufacture method of each described Jingjing sheet of heap of stone in the claim 1～9, wherein, this epitaxial layer is grown to thicker at least more than 10 microns than aforementioned ideal thickness in the step of the aforementioned epitaxial layer of growth.
11., wherein make aforementioned epitaxial layer with the growth more than 2.2 microns/minute as the manufacture method of each described Jingjing sheet of heap of stone in the claim 1～10.
12., wherein use the crystals growth device of heap of stone of the batch aforementioned epitaxial layer of growing as the manufacture method of each described Jingjing sheet of heap of stone in the claim 1～11.
13. as the manufacture method of each described Jingjing sheet of heap of stone in the claim 1～12, the wherein growth of aforementioned epitaxial layer is that aforementioned crystalline substance of heap of stone is configured in substrate in the putting groove of pedestal, the formation of this putting groove is that deepen towards central authorities gradually from periphery the bottom.
14. as the manufacture method of each described Jingjing sheet of heap of stone in the claim 1～13, wherein aforementioned crystalline substance of heap of stone with substrate on behind the growth epitaxial layer, make the showing out of initial stage of this substrate back side by etching, subsequently, aforementioned epitaxial layer is carried out flat surface grinding.
15. the manufacture method of Jingjing sheet of heap of stone as claimed in claim 14 wherein uses the spin etch device to carry out aforesaid etching.
16. as the manufacture method of each described Jingjing sheet of heap of stone in the claim 1～15, wherein aforementioned crystalline substance of heap of stone is to use silicon substrate with substrate.
17. as the manufacture method of each described Jingjing sheet of heap of stone in the claim 1～16, wherein aforementioned crystalline substance of heap of stone is to use the angle of taper of oblique angle portion than the little substrate of 22 degree with substrate.
18. a Jingjing sheet of heap of stone, it is to use the made Jingjing sheet of heap of stone of each method in the claim 1～17, and the thickness that wherein should build the epitaxial layer of Jingjing sheet is more than 50 microns, and the thickness deviation of this epitaxial layer is below ± 4%.
19. Jingjing sheet of heap of stone, it is the Jingjing sheet of heap of stone that is formed with epitaxial layer on substrate, wherein the flatness TTV of this aforesaid base plate is below 2 microns, the thickness of formed epitaxial layer on this substrate be more than 50 microns and the thickness deviation of this epitaxial layer for below ± 4%.
20. thickness deviation is below ± 2 microns in the Jingjing sheet of heap of stone as claimed in claim 19, the face of wherein aforementioned Jingjing sheet of heap of stone.
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| JP2004381493A JP2006190703A (en) | 2004-12-28 | 2004-12-28 | Method of manufacturing epitaxial wafer and epitaxial wafer |
| JP381493/2004 | 2004-12-28 |
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| CN101091237A true CN101091237A (en) | 2007-12-19 |
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| JP (1) | JP2006190703A (en) |
| KR (1) | KR20070094904A (en) |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103354242A (en) * | 2013-06-17 | 2013-10-16 | 上海晶盟硅材料有限公司 | Extremely thick epitaxial wafer for high-voltage power device, and method for manufacturing same |
| CN103415913A (en) * | 2011-03-07 | 2013-11-27 | 信越半导体股份有限公司 | Process for producing silicon wafer |
| CN111788656A (en) * | 2018-01-17 | 2020-10-16 | 胜高股份有限公司 | Method for manufacturing bonded wafer and bonded wafer |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| JP5029234B2 (en) | 2006-09-06 | 2012-09-19 | 株式会社Ｓｕｍｃｏ | Epitaxial wafer manufacturing method |
| JP5040814B2 (en) * | 2008-05-30 | 2012-10-03 | 株式会社デンソー | Method for manufacturing silicon carbide semiconductor device |
| JP2010028011A (en) * | 2008-07-24 | 2010-02-04 | Sumco Corp | Method for measuring thickness of epitaxial layer, method for manufacturing epitaxial wafer and method for controlling manufacturing process of epitaxial wafer |
| JP5795461B2 (en) | 2009-08-19 | 2015-10-14 | 株式会社Sumco | Epitaxial silicon wafer manufacturing method |
| JP2011091143A (en) * | 2009-10-21 | 2011-05-06 | Sumco Corp | Method of manufacturing silicon epitaxial wafer |
| JP2011187887A (en) * | 2010-03-11 | 2011-09-22 | Toyota Motor Corp | Method of manufacturing epitaxial wafer |
| JP5644401B2 (en) | 2010-11-15 | 2014-12-24 | 株式会社Sumco | Epitaxial wafer manufacturing method and epitaxial wafer |
| JP2012174935A (en) * | 2011-02-22 | 2012-09-10 | Shin Etsu Handotai Co Ltd | Method of manufacturing epitaxial wafer |
| US10490437B2 (en) | 2015-04-07 | 2019-11-26 | Sumco Corporation | Susceptor, vapor deposition apparatus, vapor deposition method and epitaxial silicon wafer |
| JP6485327B2 (en) * | 2015-04-07 | 2019-03-20 | 株式会社Sumco | Susceptor, vapor phase growth apparatus and vapor phase growth method |
| JP6515866B2 (en) * | 2016-05-09 | 2019-05-22 | 信越半導体株式会社 | Evaluation method of epitaxial wafer |
| DE102018200415A1 (en) | 2018-01-11 | 2019-07-11 | Siltronic Ag | Semiconductor wafer with epitaxial layer |
| JP2018121070A (en) * | 2018-03-23 | 2018-08-02 | 富士通セミコンダクター株式会社 | Method of manufacturing semiconductor device |
| JP7151688B2 (en) * | 2019-11-01 | 2022-10-12 | 三菱電機株式会社 | Silicon carbide epitaxial substrate manufacturing method and semiconductor device manufacturing method |
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| JP2759594B2 (en) * | 1993-01-30 | 1998-05-28 | 信越半導体株式会社 | Manufacturing method of epitaxial substrate |
| JP4470231B2 (en) * | 1999-03-31 | 2010-06-02 | 株式会社Ｓｕｍｃｏ | Manufacturing method of semiconductor silicon wafer |
| DE19956250C1 (en) * | 1999-11-23 | 2001-05-17 | Wacker Siltronic Halbleitermat | Production of a number of semiconductor wafers comprise simultaneously polishing a front side and a rear side of each wafer and evaluating each wafer for further processing according to quality criteria |
| JP4182323B2 (en) * | 2002-02-27 | 2008-11-19 | ソニー株式会社 | Composite substrate, substrate manufacturing method |
| JP4248804B2 (en) * | 2002-05-08 | 2009-04-02 | Ｓｕｍｃｏ Ｔｅｃｈｘｉｖ株式会社 | Semiconductor wafer and method for manufacturing semiconductor wafer |
| JP4042618B2 (en) * | 2003-04-25 | 2008-02-06 | 株式会社Ｓｕｍｃｏ | Epitaxial wafer manufacturing method |
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- 2005-11-30 WO PCT/JP2005/021948 patent/WO2006070556A1/en not_active Application Discontinuation
- 2005-11-30 CN CNB2005800452099A patent/CN100541727C/en not_active Expired - Fee Related
- 2005-11-30 KR KR1020077014540A patent/KR20070094904A/en not_active Application Discontinuation
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103415913A (en) * | 2011-03-07 | 2013-11-27 | 信越半导体股份有限公司 | Process for producing silicon wafer |
| CN103415913B (en) * | 2011-03-07 | 2016-03-30 | 信越半导体股份有限公司 | The manufacture method of silicon wafer |
| CN103354242A (en) * | 2013-06-17 | 2013-10-16 | 上海晶盟硅材料有限公司 | Extremely thick epitaxial wafer for high-voltage power device, and method for manufacturing same |
| CN103354242B (en) * | 2013-06-17 | 2016-09-14 | 上海晶盟硅材料有限公司 | High voltage power device extremely thick epitaxial wafer and manufacture method thereof |
| CN111788656A (en) * | 2018-01-17 | 2020-10-16 | 胜高股份有限公司 | Method for manufacturing bonded wafer and bonded wafer |
| CN111788656B (en) * | 2018-01-17 | 2024-01-30 | 胜高股份有限公司 | Method for manufacturing bonded wafer and bonded wafer |
Also Published As
| Publication number | Publication date |
|---|---|
| WO2006070556A1 (en) | 2006-07-06 |
| TW200625413A (en) | 2006-07-16 |
| JP2006190703A (en) | 2006-07-20 |
| CN100541727C (en) | 2009-09-16 |
| KR20070094904A (en) | 2007-09-27 |
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